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12 Nov 1990

Volume 57, Issue 20, pp. 2045-2155

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Vertical‐cavity surface‐emitting lasers with semitransparent metallic mirrors and high quantum efficiencies

Li‐Wei Tu, E. Fred Schubert, Rose F. Kopf, George J. Zydzik, Minghwei Hong, S. N. George Chu, and Joseph P. Mannaerts

Appl. Phys. Lett. 57, 2045 (1990); http://dx.doi.org/10.1063/1.103936 (3 pages) | Cited 12 times

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Semitransparent thin silver films are employed as both the top mirrors and electrodes for GaAs vertical‐cavity surface‐emitting lasers. The semitransparent silver films allow the emission of light from the top epitaxial side. Quarter‐wave AlAs/AlxGa1−xAs stacks are used as the bottom n‐type mirrors. Light output versus excitation current measurements yields an efficiency of 0.76 mW/mA from the top silver mirror side, which corresponds to an external differential quantum efficiency of 54% at a lasing wavelength of 0.88 μm. The internal differential quantum efficiency is estimated to be ≳94%. An optical output power of 10 mW is obtained at a pulsed excitation current of 72 mA.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

High‐power AlGaAs/GaAs single quantum well surface‐emitting lasers with integrated 45° beam deflectors

Jae‐Hoon Kim, Robert J. Lang, Anders Larsson, Luke P. Lee, and Authi A. Narayanan

Appl. Phys. Lett. 57, 2048 (1990); http://dx.doi.org/10.1063/1.103937 (3 pages) | Cited 5 times

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We report on high‐power AlGaAs/GaAs graded‐index single quantum well surface‐emitting lasers (SELs), with etched vertical mirrors and integrated 45° beam deflectors fabricated by a tilted ion beam etching technique. 100‐μm‐wide, 500‐μm‐long, broad‐area SELs exhibited a threshold current of 300 mA, a peak power of more than 380 mW, and an external differential quantum efficiency of 17% without facet coating. The SELs showed stable operation up to 7th. These results show the highest power and external differential quantum efficiency reported to date for 45° beam deflecting SELs. The full widths at half maximum of the surface‐emitting far‐field pattern parallel and perpendicular to the laser axis were 8.5° and 14°, respectively.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
85.60.-q Optoelectronic devices

High‐energy argon‐ion implantation for waveguide formation in (AlGa)As/GaAs multilayers

D. R. Myers, Kyu Lee, T. Hausken, R. J. Simes, H. Ribot, F. Laruelle, and L. A. Coldren

Appl. Phys. Lett. 57, 2051 (1990); http://dx.doi.org/10.1063/1.104115 (3 pages) | Cited 3 times

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We have intermixed GaAs/(AlGa)As multiquantum structures for waveguides and lasers by 3 MeV Ar implantation and 850 °C, 30 min closed‐tube annealing. Buried‐heterostructure lasers defined by Ar mixing had threshold currents of 100 mA for 370‐μm‐long devices. As waveguides for 1.15 μm light, the devices exhibited losses of 25 cm−1 in the annealed, implanted regions, and 15 cm−1 in unimplanted regions defined by adjacent implants. Analysis of the results illustrates important considerations for implant mixing for waveguide formation.
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61.72.U- Doping and impurity implantation
42.79.Gn Optical waveguides and couplers
85.60.Jb Light-emitting devices
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

High‐power, diffraction‐limited, monolithically integrated master oscillator/power amplifier

D. F. Welch, R. Waarts, D. Mehuys, R. Parke, D. Scifres, R. Craig, and W. Streifer

Appl. Phys. Lett. 57, 2054 (1990); http://dx.doi.org/10.1063/1.103938 (3 pages) | Cited 5 times

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Monolithically integrated master oscillator/power amplifiers have been fabricated with a single‐mode distributed Bragg reflector laser as the oscillator and a chain of amplifier output couplers defined by a single‐mode waveguide gain region and a second‐order grating detuned from the gain peak. The output of the amplifier chain is a single frequency and can be phased to obtain a diffraction‐limited output up to an output power of 485 mW.
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42.79.Hp Optical processors, correlators, and modulators
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Improvement of the KrF(B→X) excimer lamp with 248 and 193 nm dual wavelength emission using an Ar buffer

Ichiro Nakamura, Fumihiko Kannari, and Minoru Obara

Appl. Phys. Lett. 57, 2057 (1990); http://dx.doi.org/10.1063/1.103939 (3 pages) | Cited 7 times

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A quasi‐continuous KrF(248 nm:B→X)fluorescence of over 8 ms pulse duration with a 100 Hz operation frequency was observed in a microwave‐discharge‐pumped KrF lamp with an Ar buffer gas in place of the He/Ne buffer. With an average microwave power deposition of 517.1 W, the maximum average KrF fluorescence power was 58.2 W obtained at a KrF intrinsic efficiency of 11.2% with the lamp gas mixture of F2/Kr/Ar=4/2/94(%) at 50 Torr and simultaneously an average ArF(193 nm:B→X) fluorescence power of 17.4 W with over 8 ms pulse duration at a 100 Hz operation frequency was also obtained. Based on the total fluorescence power of ArF and KrF, the intrinsic efficiency becomes as high as 14.6%. The maximum KrF intrinsic efficiency was 13.8% obtained with a lamp gas mixture of F2/Kr/Ar=2/2/96(%) at 50 Torr. The maximum average KrF fluorescence power and KrF intrinsic efficiency with the Ar buffer has exceeded the maximum average KrF fluorescence of 53 W and the corresponding KrF intrinsic efficiency of 8.3% achieved previously with the lamp gas mixture of F2/Kr/He/Ne=2/1/48.5/48.5(%) at 50 Torr. Dual wavelength emission should be useful for those that need both the 248 and 193 nm wavelengths.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

Novel optical‐power‐controlled oscillator with multigigahertz oscillation frequency range

F. S. Choa, T. L. Koch, U. Koren, and C. A. Burrus

Appl. Phys. Lett. 57, 2060 (1990); http://dx.doi.org/10.1063/1.103940 (3 pages)

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An optical analogue of a voltage‐controlled oscillator based on an optical resonant amplifier structure is proposed and experimentally demonstrated. By using tunable distributed Bragg reflector and distributed feedback laser diode amplifiers, we demonstrate oscillators with frequencies controllable from several hundred MHz into multiGHz range. Such devices may find applications in future all‐optical signal processing and optical communication systems.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks

Two‐photon absorption as a limitation to all‐optical waveguide switching in semiconductors

K. W. DeLong and G. I. Stegeman

Appl. Phys. Lett. 57, 2063 (1990); http://dx.doi.org/10.1063/1.103941 (2 pages) | Cited 29 times

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The dispersion of a parameter quantifying the effects of two‐photon absorption on all‐optical waveguide switching devices is evaluated for the case of semiconductors in a two band model. Serious limitations are predicted based on the nonresonant bound electron response for photon energies between the band gap and one half the band gap.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.82.-m Integrated optics
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.20.-e Optical properties of bulk materials and thin films

Low threshold and high power output 1.5 μm InGaAs/InGaAsP separate confinement multiple quantum well laser grown by chemical beam epitaxy

W. T. Tsang, M. C. Wu, T. Tanbun‐Ek, R. A. Logan, S. N. G. Chu, and A. M. Sergent

Appl. Phys. Lett. 57, 2065 (1990); http://dx.doi.org/10.1063/1.103942 (3 pages) | Cited 18 times

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We have demonstrated the first successful preparation of InGaAs/InGaAsP multiple quantum well (MQW) lasers grown by chemical beam epitaxy. The broad‐area threshold current densities of standard (not graded index) separate confinement heterostructure (SCH) MQW lasers were as low as 860 and ∼590 A/cm2 for cavity lengths of 500 and 1500–3500 μm. Such values are similar to those obtained from MQW wafers employing the more advanced graded index SCH(GRIN‐SCH) grown by metalorganic vapor phase epitaxy. Buried‐heterostructure lasers also have similar threshold currents, i.e., 25–40 mA for 300–1500 long cavities. Pulsed and cw output power at 1.57 μm as high as 216 and 140 mW were obtained from 1‐mm‐long buried‐heterostructure lasers having antireflection and high reflection coatings of ∼5% and ∼85%. The layer thickness uniformity is better than ±1% across a 2‐in.‐diam wafer.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Frequency modulation and linewidth of gain‐levered two‐section single quantum well lasers

K. Y. Lau

Appl. Phys. Lett. 57, 2068 (1990); http://dx.doi.org/10.1063/1.103943 (3 pages) | Cited 8 times

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The ‘‘gain lever’’ effect in two‐section single quantum well lasers can be used in enhancing the frequency modulation (FM) efficiency of the laser without a corresponding increase in the FM noise, i.e., linewidth. Theoretical and experimental results of the FM efficiency, speed, tuning range, and linewidth will be discussed and compared to other tunable laser structures.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes

Intraplane guided wave massive fanout optical interconnections

Ray T. Chen, Michael R. Wang, and Tomasz Jannson

Appl. Phys. Lett. 57, 2071 (1990); http://dx.doi.org/10.1063/1.103944 (3 pages) | Cited 11 times

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One‐to‐30 guided wave optical interconnections are demonstrated at 632.8 nm using a highly multiplexed waveguide volume hologram. This technology is capable of providing intrachip and intrawafer optical interconnections. The theoretical limit of the fanout number is addressed and experimentally confirmed. The measured data show that the diffracted beams have an average diffraction efficiency of 2.3% with ±0.2% variation. The demonstrated results can save surface space of electronic chips and also provide a large fanout capability due to the high index modulation of the volume hologram. Further applications based on this technology are very promising. Head‐up display, high‐speed optical data bus, surface enhanced Raman spectrometer, and optical sensors are some of the attractive ones.
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42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.79.Gn Optical waveguides and couplers
42.40.My Applications

Efficient type I blue second‐harmonic generation in periodically segmented KTiOPO4 waveguides

C. J. van der Poel, J. D. Bierlein, J. B. Brown Co., and S. Colak

Appl. Phys. Lett. 57, 2074 (1990); http://dx.doi.org/10.1063/1.103945 (3 pages) | Cited 111 times

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We report type I phase‐matched blue second‐harmonic generation from periodically segmented channel ion‐exchanged waveguides in KTiOPO4 with output wavelengths from 0.38 to 0.48 μm and efficiencies exceeding 50%/W cm2. Evidence is presented suggesting that these efficiencies result from ferroelectric domain reversals induced by waveguide fabrication. Waveguide structure, wavelength, and output power characteristics are presented.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Gn Optical waveguides and couplers
42.70.-a Optical materials

Particle‐plasma interactions in low‐pressure discharges

G. M. Jellum and D. B. Graves

Appl. Phys. Lett. 57, 2077 (1990); http://dx.doi.org/10.1063/1.103946 (3 pages) | Cited 42 times

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Spatial profiles of size and number density of aluminum particles in argon plasmas have been measured. Angular dissymmetry laser light scattering indicates that larger particles tend to segregate towards the anodic plasma‐sheath boundary; however, the larger particles (≳400 nm diameter) near this boundary are present in number densities lower than those closer to the center of the discharge, where particles are smaller (∼300 nm). Nonspherical particle aggregates appear to form near the plasma‐sheath interface under some conditions. Optical emission intensity and positive ion number density are reduced in discharges with particles as compared to discharges without particles.
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52.80.Hc Glow; corona
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
52.20.Hv Atomic, molecular, ion, and heavy-particle collisions
51.50.+v Electrical properties (ionization, breakdown, electron and ion mobility, etc.)

Pressure dependence of ionization efficiency in sputtering magnetrons

T. E. Sheridan, M. J. Goeckner, and J. Goree

Appl. Phys. Lett. 57, 2080 (1990); http://dx.doi.org/10.1063/1.103947 (3 pages) | Cited 5 times

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Using a Monte Carlo simulation, we show how electron confinement allows sputtering magnetrons to operate at lower neutral pressures than similar unmagnetized devices. We find that at both high and low pressures, the ionization efficiency in a magnetron is constant, and it varies by only 40% between the two regimes. In contrast, the efficiency of an unmagnetized discharge varies linearly with pressure, becoming very small at low pressures.
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52.75.-d Plasma devices
52.25.Jm Ionization of plasmas
81.15.Cd Deposition by sputtering

X‐pinch soft x‐ray source for microlithography

D. A. Hammer, D. H. Kalantar, K. C. Mittal, and N. Qi

Appl. Phys. Lett. 57, 2083 (1990); http://dx.doi.org/10.1063/1.103948 (3 pages) | Cited 16 times

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A novel soft x‐ray source for submicron resolution lithography is described. Exploratory experiments with the x‐pinch dense plasma radiation source have been performed using a 500 kA, 40 ns pulsed power generator. About 33 J of magnesium K‐shell radiation (1.3–1.5 keV) and 10 J of aluminum K‐shell radiation (1.6–1.7 keV) have been produced in a source approximately 0.5 mm or less in diameter during a single pulse. The yield increased rapidly with current, implying the possibility of exposing a resist at a distance of 40 cm using a<750 kA pulser in as few as ten pulses.
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85.40.Hp Lithography, masks and pattern transfer
07.85.-m X- and γ-ray instruments
52.55.Ez Theta pinch
52.70.La X-ray and γ-ray measurements

Experimental observations of L‐ and M‐shell spectra emitted from plasmas produced by the irradiation of solid targets with single 3.5 ps, KrF laser pulses

J. Edwards, V. Barrow, O. Willi, and S. J. Rose

Appl. Phys. Lett. 57, 2086 (1990); http://dx.doi.org/10.1063/1.103949 (3 pages) | Cited 3 times

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L‐ and M‐shell x‐ray spectra obtained when solid targets were irradiated by single, 3.5 ps, KrF laser pulses with irradiances above 1016 W cm−2 are presented. Modeling of the experimental conditions with a one‐dimensional hydrocode and time‐dependent atomic physics is shown to be consistent with the experimental results.
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52.70.La X-ray and γ-ray measurements
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.25.Jm Ionization of plasmas
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Simultaneous measurement of lateral and normal forces with an optical‐beam‐deflection atomic force microscope

Gerhard Meyer and Nabil M. Amer

Appl. Phys. Lett. 57, 2089 (1990); http://dx.doi.org/10.1063/1.103950 (3 pages) | Cited 217 times

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An atomic force microscope capable of measuring, simultaneously yet separately, lateral (‘‘frictional’’) and normal forces is described. A direction‐dependent feature, absent in topological images, is found when scanning stepped surfaces of NaCl (001) in ultrahigh vacuum. A simple model is presented to account for this observation.
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46.80.+j Measurement methods and techniques in continuum mechanics of solids
68.35.B- Structure of clean surfaces (and surface reconstruction)
07.07.-a General equipment
81.40.Pq Friction, lubrication, and wear

Selective low‐pressure chemical vapor deposition of Si1−xGex alloys in a rapid thermal processor using dichlorosilane and germane

Yulin Zhong, Mehmet C. Öztürk, Douglas T. Grider, Jimmie J. Wortman, and Michael A. Littlejohn

Appl. Phys. Lett. 57, 2092 (1990); http://dx.doi.org/10.1063/1.103951 (3 pages) | Cited 27 times

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Low‐pressure chemical vapor deposition of Si1−xGex alloys in a cold wall, lamp‐heated rapid thermal processor was studied. Alloys were deposited using the reactive gases GeH4 and SiH2Cl2 in a hydrogen carrier gas. The depositions were performed at a total pressure of 2.5 Torr and at temperatures between 500 and 800 °C using GeH4:SiH2Cl2 ratios ranging from 0.025 to 1.00. Results showed that Si1−xGex alloys can be deposited selectively on silicon in SiO2. The selectivity is enhanced significantly by the addition of GeH4 in the gas stream. In this work, selective depositions were obtained when the GeH4:SiH2Cl2 gas flow ratio was greater than 0.2 regardless of the deposition temperature, corresponding to a Ge content of 20% or higher in the films as determined by Auger electron spectroscopy. An enhancement in the deposition rate was observed in agreement with earlier reports due to the addition of GeH4. The activation energy for deposition in the surface reaction limited regime varied from 20 to 30 kcal/mole with the gas flow ratios used in this study.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
82.30.Hk Chemical exchanges (substitution, atom transfer, abstraction, disproportionation, and group exchange)

Vapor phase hydrocarbon removal for Si processing

Srinandan R. Kasi and M. Liehr

Appl. Phys. Lett. 57, 2095 (1990); http://dx.doi.org/10.1063/1.103952 (3 pages) | Cited 26 times

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Ultraviolet/Oxygen (UV/O2) based vapor phase cleaning of Si(100) surfaces dosed with specific organic molecules has been studied by surface and gas phase analytical techniques. The treatment results in chain scission and carbon volatilization as CO and CO2. At room temperature partial trapping of carbon‐containing species in the oxide is observed, while at elevated temperatures complete hydrocarbon removal occurs. UV/O2‐cleaned samples closely resemble those produced by the standard RCA clean in terms of hydrocarbon removal and oxide formation and this process appears suitable as vapor phase final Si wafer clean.
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81.65.-b Surface treatments
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
85.40.Hp Lithography, masks and pattern transfer

Quantitative electron channeling measurements for high sensitivity surface analysis

E. Ophir‐Arad, R. Fastow, and R. Kalish

Appl. Phys. Lett. 57, 2098 (1990); http://dx.doi.org/10.1063/1.103953 (3 pages) | Cited 4 times

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Very high sensitivity to low dose implantation damage has been achieved by a novel quantitative analysis of electron channeling patterns (ECPs). An algorithm, based on the statistical analysis of the two‐dimensional ECP pictures obtained from a scanning electron microscope, has been developed. The analysis yields a single number (the variance), analogous to the quantity χmin deduced from ion channeling measurements, which characterizes the surface crystallinity. Measurements performed on implanted silicon (point defects) and CdTe (extended defects) crystals show that electron channeling is approximately two orders of magnitude more sensitive to implantation damage than ion channeling. Changes in the ECP of Si and CdTe were observed after implantations with 200 keV Ar and 320 keV In ions at doses as low as 1×1012 cm−2 and 1×1013 cm−2, respectively. Moreover, electron channeling is capable of probing areas about four orders of magnitude smaller than commonly used ion channeling.
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07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
61.80.Jh Ion radiation effects
07.78.+s Electron, positron, and ion microscopes; electron diffractometers

Density of states of an AlAs/GaAs fractional superlattice in a modulation− doped structure

K. Tsubaki, Y. Tokura, and N. Susa

Appl. Phys. Lett. 57, 2101 (1990); http://dx.doi.org/10.1063/1.103954 (3 pages) | Cited 2 times

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The AlAs/GaAs fractional superlattice in an AlGaAs/GaAs modulation‐doped structure, which is used for quantum wire transistors and electron wave interference transistors, is investigated from the viewpoint of the electronic state. A threshold voltage (Vth) difference of 0.27 V between the quantum wire and electron wave interference transistor indicates a periodic potential amplitude of 10 meV. Vth of both these transistors and the flatband voltage (Vfb) calculated from the gate capacitance are obtained at various temperatures between 4.2 and 100 K. The density of states (DOS) is determined from the temperature dependence for Vth of both transistors and Vfb. A DOS below the bottom of the well in the periodic potential is one dimensional, but a DOS between the bottom of the well and the top of the barrier in the periodic potential is two dimensional.
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73.20.At Surface states, band structure, electron density of states
72.15.Rn Localization effects (Anderson or weak localization)
73.61.Ey III-V semiconductors

Negative differential conductance due to resonant states in GaInAs/InP hot‐electron transistors

Yasuyuki Miyamoto, Shinji Yamaura, and Kazuhito Furuya

Appl. Phys. Lett. 57, 2104 (1990); http://dx.doi.org/10.1063/1.103956 (3 pages)

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We have observed dips with negative values in the curve of the differential conductance of the base versus the base‐emitter voltage dIB/dVBE at 77 K in GaInAs/InP hot‐electron transistors grown by organometallic vapor phase epitaxy. The efficiency of the hot‐electron transmission across the 40‐nm‐thick base was more than 0.99. In comparison with a theoretical model considering that observed dips should have been caused by the resonant states in the base well, the phase relaxation time of the hot electron is estimated to be in the order of 0.1 ps or longer.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Reflection high‐energy electron diffraction dynamics study of GaAs, AlAs, and Al0.5Ga0.5As layer growth under As4 and/or As2 molecular beam species

J. Y. Kim, D. Bassi, and L. Jostad

Appl. Phys. Lett. 57, 2107 (1990); http://dx.doi.org/10.1063/1.103930 (3 pages) | Cited 9 times

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Reflection high‐energy electron diffraction intensity dynamic behavior was examined on GaAs, AlAs, and Al0.5Ga0.5As layers using As4 and/or As2 flux to establish optimum growth conditions for heterointerfaces. Results show that As4 is preferable for the growth of AlAs and Al0.5Ga0.5As, while As2 is better for GaAs. This finding is explained on the basis of the expected dynamic surface kinetic processes. Low‐temperature photoluminescence line width of a quantum well (20 monolayer GaAs well/100 monolayer Al0.5Ga0.5As barriers) grown under the optimized growth condition is 4.5 meV.
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61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Cr III-V semiconductors
61.72.Bb Theories and models of crystal defects

Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)

S. Guha, A. Madhukar, and K. C. Rajkumar

Appl. Phys. Lett. 57, 2110 (1990); http://dx.doi.org/10.1063/1.103914 (3 pages) | Cited 388 times

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Direct evidence for interplanar relaxation in islands at the initial stages of strained epitaxy is presented using molecular beam epitaxically deposited In0.5Ga0.5As on GaAs(100). Concomitant existence of atomic displacements in the substrates to unexpectedly large depths of ∼150 Å is found. In incoherent islands, defects are found to be introduced symmetrically near the island edges.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Surface passivation effects of As2S3 glass on self‐aligned AlGaAs/GaAs heterojunction bipolar transistors

H. L. Chuang, M. S. Carpenter, M. R. Melloch, M. S. Lundstrom, E. Yablonovitch, and T. J. Gmitter

Appl. Phys. Lett. 57, 2113 (1990); http://dx.doi.org/10.1063/1.104114 (3 pages) | Cited 21 times

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A recently developed As2S3 chemical treatment was used to passivate the perimeters of self‐aligned heterojunction bipolar transistors (HBTs). The As2S3 chemical treatment significantly lowered the base current resulting in a two order of magnitude reduction in the collector current density at which dc current gain was observed (β=1). No degradation with time has been observed in the electrical characteristics of the chemically treated HBTs. This absence of degradation is attributed to the impermeability to oxygen of the As2S3 glass which coats the perimeter of the HBT after chemical treatment.
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85.40.Ls Metallization, contacts, interconnects; device isolation
73.20.At Surface states, band structure, electron density of states
85.30.Pq Bipolar transistors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Wannier–Stark localization in a strained InGaAs/GaAs superlattice

B. Pezeshki, D. Thomas, and J. S. Harris

Appl. Phys. Lett. 57, 2116 (1990); http://dx.doi.org/10.1063/1.103915 (2 pages) | Cited 4 times

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We report the first room‐temperature observation of Wannier–Stark localization in a strained InGaAs/GaAs superlattice. The localization effects are in close agreement to theory. At low electric fields, the room‐temperature absorption data show a small Wannier exciton peak at the lower edge of the miniband, and a more prominent M1 exciton at higher energy. At higher fields, the miniband localizes to a single quantum well exciton with accompanying +1 and −1 transitions. At even higher fields the initial blue shift of the Wannier exciton changes to a Stark effect red shift with a Δα/α of about 3.
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71.35.-y Excitons and related phenomena
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
71.23.An Theories and models; localized states
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
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