APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

19 Nov 1990

Volume 57, Issue 21, pp. 2169-2273

Page 1 of 2 Pages Next Page | Jump to Page

Amplified spontaneous emission in Tm3+‐doped monomode optical fibers in the visible region

A. S. L. Gomes, Cid B. de Araujo, B. J. Ainslie, and S. P. Craig‐Ryan

Appl. Phys. Lett. 57, 2169 (1990); http://dx.doi.org/10.1063/1.103924 (3 pages) | Cited 11 times

Full Text: | Download PDF

Show Abstract
We report the observation of amplified spontaneous emission in silica‐based single‐mode optical fibers doped with Tm3+. Frequency upconverted emission was observed in a number of visible and near‐infrared lines after pumping by 1064 nm radiation. The upconversion process is induced via the nonlinear absorption of the infrared beam and enhanced by stimulated Raman scattering in the fiber, leading to amplified spontaneous emission in the blue (∼473 nm) region.
Show PACS
42.55.Rz Doped-insulator lasers and other solid state lasers
78.45.+h Stimulated emission
42.60.By Design of specific laser systems

High average power edge emitting laser diode arrays on silicon microchannel coolers

D. Mundinger, R. Beach, W. Benett, R. Solarz, V. Sperry, and D. Ciarlo

Appl. Phys. Lett. 57, 2172 (1990); http://dx.doi.org/10.1063/1.103925 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
We have demonstrated high average power output devices in both one‐dimensional (1‐D) and two‐dimensional (2‐D) arrays of laser diodes using efficient edge emitting cleaved bars and silicon microchannel coolers. These packages are based on the rack and stack architecture. For the 1‐D array a cw optical power output of 22.2 W was obtained with 20% electrical to optical conversion efficiency. For the 2‐D array an average optical power density of greater than 100 W/cm2 was obtained at an efficiency of 25%.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Fission‐fragment‐excited lasing at 585.3 nm in He/Ne/Ar gas mixtures

G. A. Hebner and G. N. Hays

Appl. Phys. Lett. 57, 2175 (1990); http://dx.doi.org/10.1063/1.103926 (3 pages) | Cited 9 times

Full Text: | Download PDF

Show Abstract
Fission‐fragment‐excited lasing is reported for the 3p′(1/2)0–3s′(1/2)01 neon transition (λ=585.3 nm) in mixtures of He/Ne/Ar. The laser power efficiency peaks at a He/Ne/Ar ratio of approximately 50/2/1 for a laser cell pressure of 1.9 atmospheres. Laser parameters for pump rates from 70 to 1200 W/cm3 are presented for three cavity configurations.
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Emission spectroscopy during excimer laser ablation of graphite

Xiangli Chen and Jyoti Mazumder

Appl. Phys. Lett. 57, 2178 (1990); http://dx.doi.org/10.1063/1.103927 (3 pages) | Cited 8 times

Full Text: | Download PDF


See Also: Erratum

Show Abstract
Emission spectrum of the laser‐induced plasma plume is obtained during KrF excimer laser ablation of graphite in argon and hydrogen gas mixture for deposition of diamond‐like films. Bands of C2 and CN molecules dominate the spectrum while weak CI, CII, and Hα lines are also observed. From the emission intensities, molecular vibrational temperature is calculated to be (12–15)×103 K, and concentrations are estimated to be N(C2)=5×1014 cm−3 and N(CN)=2×1014 cm−3.
Show PACS
78.40.Ha Other nonmetallic inorganics
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
33.20.Kf Visible spectra

Frequency stabilization of an external‐cavity diode laser

W. David Lee, Joe C. Campbell, R. J. Brecha, and H. J. Kimble

Appl. Phys. Lett. 57, 2181 (1990); http://dx.doi.org/10.1063/1.103928 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
Using a hybrid optical/electronic technique, an external‐cavity diode laser was frequency stabilized with respect to the sub‐Doppler spectrum of cesium vapor. Laser linewidths of 65 kHz and frequency stabilities of ±10 kHz were obtained.
Show PACS
42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Effects of strain in multiple quantum well distributed feedback lasers

T. Tanbun‐Ek, R. A. Logan, S. N. G. Chu, A. M. Sergent, and K. W. Wecht

Appl. Phys. Lett. 57, 2184 (1990); http://dx.doi.org/10.1063/1.103929 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
A survey of graded‐index separate confinement multiple quantum well distributed feedback lasers comparing the effects of strain in the quantum well upon threshold, output power, and linewidth is reported. Lasers with either compressive or tensile strained quantum wells and a long cavity length (890 μm) show lower threshold current (10–20 mA) as well as lower linewdith power product than lasers with unstrained quantum wells and have a comparable minimum linewidth to the unstrained quantum well lasers. A minimum linewidth as narrow as 900 and 440 kHz for compressive strain and unstrained quantum well lasers, respectively, was obtained at output power of 30 mW. Single longitudinal mode operation with a maximum output power over 80 mW was observed in all the structures.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Ion beam induced conductivity in chemically vapor deposited diamond films

S. Prawer, A. Hoffman, and R. Kalish

Appl. Phys. Lett. 57, 2187 (1990); http://dx.doi.org/10.1063/1.103931 (3 pages) | Cited 42 times

Full Text: | Download PDF

Show Abstract
Polycrystalline diamond films deposited by the microwave plasma chemical vapor deposition (CVD) technique onto quartz substrates have been irradiated with 100 keV C and 320 keV Xe ions at room temperature and at 200 °C. The dose dependence of the electrical conductivity measured in situ exhibited complicated, nonmonotonic behavior. High doses were found to induce an increase of up to ten orders of magnitude in the electrical conductivity of the film. The dose dependence of the conductivity for the CVD films was found to be very similar to that measured for natural, type IIa, single‐crystal diamonds irradiated under identical conditions. This result suggests that the conduction mechanism in ion beam irradiated polycrystalline CVD diamond films is not dominated by grain boundaries and graphitic impurities as one might have expected, but rather is determined by the intrinsic properties of diamond itself.
Show PACS
81.40.Rs Electrical and magnetic properties related to treatment conditions
61.80.Jh Ion radiation effects
73.61.Ng Insulators
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Enhancement of group III atom interdiffusion by nondopant oxygen implants in In0.53Ga0.47As‐In0.52Al0.48As multiquantum wells

E. V. K. Rao, P. Ossart, H. Thibierge, M. Quillec, and P. Krauz

Appl. Phys. Lett. 57, 2190 (1990); http://dx.doi.org/10.1063/1.103932 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
We show here that the implants of oxygen, a basically nondopant impurity, after adequate high‐temperature annealings (for example, 750 °C, 1 h furnace anneal) lead to a significant interdiffusion of group III atoms in molecular beam epitaxy grown In0.53Ga0.47As‐In0.52Al0.48As multiquantum wells (MQWs). Both photoluminescence and Auger electron spectroscopy measurements (coupled to Ar+ ion etching) have been employed to monitor disordering in MQWs implanted with oxygen (5×1013 to 5×1014 ions cm−2) and subsequently annealed using either rapid thermal anneals or long duration furnace anneals. The role of oxygen to enhance group III atom (Al, Ga, and In) interdiffusion is unambiguously established and a tentative explanation based on a possible migration of oxygen in these MQWs is proposed and dissussed.
Show PACS
66.30.Ny Chemical interdiffusion; diffusion barriers
66.30.J- Diffusion of impurities
61.72.U- Doping and impurity implantation

Growth of oxide layers on gallium arsenide with a high kinetic energy atomic oxygen beam

M. A. Hoffbauer, J. B. Cross, and V. M. Bermudez

Appl. Phys. Lett. 57, 2193 (1990); http://dx.doi.org/10.1063/1.103933 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
Oxide layers have been formed on (110) and (100) GaAs wafers by exposure to a high kinetic energy beam of atomic O and characterized using x‐ray photoemission spectroscopy (with Ar+ ion sputter profiling) and Raman spectroscopy. Photoemission shows the reacted layer, ∼500 Å thick, to be uniform in composition and fully oxidized. Raman spectroscopy shows that the substrate is not appreciably disordered during oxidation and in some cases no free‐elemental As is present at the oxide‐substrate interface at a detectable level.
Show PACS
81.65.-b Surface treatments
61.80.Lj Atom and molecule irradiation effects

Anomalies of hypersonic velocity and attenuation in vinylidene fluoride‐trifluoroethylene copolymer from Brillouin scattering

Zhimin Liu and V. Hugo Schmidt

Appl. Phys. Lett. 57, 2196 (1990); http://dx.doi.org/10.1063/1.103934 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
The hypersonic behavior of a vinylidene fluoride and trifluoroethylene (70/30 mol %) copolymer has been investigated by Brillouin scattering without using index matching liquid. Both the glass and ferroelectric transitions are clearly seen in the acoustic behavior. The home‐prepared sample has excellent optical properties and let us obtain sound attenuation information in the temperature range of 23–123 °C, which another investigator did not discuss because of the bad optical properties of the sample surface. Anomalies of sound attenuation near the transition point have been observed.
Show PACS
62.80.+f Ultrasonic relaxation
77.80.B- Phase transitions and Curie point
78.35.+c Brillouin and Rayleigh scattering; other light scattering
61.41.+e Polymers, elastomers, and plastics

Tunneling resonance studies of electronic ministop gap mode in coupled semi‐infinite semiconductor superlattices

F. Y. Huang

Appl. Phys. Lett. 57, 2199 (1990); http://dx.doi.org/10.1063/1.103911 (3 pages) | Cited 9 times

Full Text: | Download PDF


See Also: Erratum

Show Abstract
A numerical technique is developed to analyze the electronic state in coupled semi‐infinite semiconductor superlattices. It is found that the superlattice miniband shrinks to discrete energy levels near the surface, and localized electronic surface states with energy falling within the ministop gap exist under certain conditions. Numerical calculations are also compared with results from an exact eigenvalue equation.
Show PACS
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.20.At Surface states, band structure, electron density of states
71.23.An Theories and models; localized states

Etching characteristics of Si1−xGex alloy in ammoniac wet cleaning

Kazuhisa Koyama, Masayuki Hiroi, Toru Tatsumi, and Hiroyuki Hirayama

Appl. Phys. Lett. 57, 2202 (1990); http://dx.doi.org/10.1063/1.103912 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
Etching characteristics of Si1−xGex alloys in ammoniac wet cleaning (RCA cleaning) were examined. The etching rate of Si1−xGex became larger with increasing Ge ratio (X). Temperature dependence of the etching rate was studied and the etching rate was large at high temperatures. However, no obvious difference was observed in the temperature dependence of Si1−xGex etching rate at different Ge ratio (X). A surface morhology degradation after RCA cleaning was observed at high Ge ratio (X). A stoichiometry change of Si1−xGex surface after RCA cleaning was observed by x‐ray photoelectron spectroscopy (XPS). The etching rate increase and the surface morphology degradation are thought to be due to the rapid etching of Ge atoms at the top surface layer.
Show PACS
81.65.-b Surface treatments
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Novel indium oxide/n‐GaAs diodes

A. Golan, J. Bregman, Y. Shapira, and M. Eizenberg

Appl. Phys. Lett. 57, 2205 (1990); http://dx.doi.org/10.1063/1.103913 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
Diodes with transparent top contacts were fabricated by depositing indium oxide layers onto n‐type GaAs by means of reactive evaporation of In in the presence of oxygen. The electrical characteristics as well as the structural properties and chemical composition of the resulting junctions were studied using Auger electron spectroscopy, x‐ray diffraction, optical absorption, capacitance‐voltage, and dark current‐voltage measurements. The best diodes were obtained under deposition conditions of substrate temperature 250 °C and oxygen pressure 5×10−4 mbar; these diodes exhibited a Schottky barrier height of 0.85 V with an ideality factor of 1.04. The indium oxide films were found to be polycrystalline and to have an electrical resistivity of 3×10−4 Ω cm and an optical transmittance above 90% over the whole visible range. The effect of deviations from the optimal deposition parameters on the diode properties is discussed.
Show PACS
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.30.+y Surface double layers, Schottky barriers, and work functions
68.35.B- Structure of clean surfaces (and surface reconstruction)

Photoluminescence of quantum well structures with modulated layers grown by an alternating source supply

A. Hashimoto, N. Sugiyama, and M. Tamura

Appl. Phys. Lett. 57, 2208 (1990); http://dx.doi.org/10.1063/1.103894 (3 pages)

Full Text: | Download PDF

Show Abstract
The photoluminescence (PL) spectra from modulated quantum well structures were observed. The modulated quantum well structure comprised a 4 monolayer (ML) modulated layer and an 18 ML GaAs layer between AlAs barrier layers. The modulated layer was grown by incorporating As into a Ga and Al mixture on an AlAs surface. The main peak energy of the PL spectra at 77 K showed a growth temperature dependence; a remarkable red shfit of the main peak energy was observed for samples grown at low temperature. The red shift of the PL peak energy indicates an increase in the effective width of the GaAs well. A rearrangement model of Ga and Al atoms on the AlAs surface during growth with As incorporation into the Ga and Al mixture is proposed to explain the growth temperature dependence of the PL peak energy.
Show PACS
78.55.Cr III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Si‐H and N‐H vibrational properties in glow‐discharge amorphous SiNx:H films (0<x<1.55)

Seiichi Hasegawa, Masaaki Matsuda, and Yoshihiro Kurata

Appl. Phys. Lett. 57, 2211 (1990); http://dx.doi.org/10.1063/1.104160 (3 pages) | Cited 19 times

Full Text: | Download PDF

Show Abstract
Amorphous SiNx:H films were prepared by rf glow discharge of SiH4‐NH3 mixtures at 300 °C, and the SiH, NH, and SiN vibrational absorptions were investigated as a function of x. The stretching absorption profiles due to SiH and SiN bonds are reproduced by a superposition of two components at around 2000 and 2100 cm−1, and of three components at around 750, 840, and 960 cm−1, respectively. The dependence of these intensities on x was examined by means of a generation probability analysis on the basis of the random bonding model including SiH and NH bonds which play an important role in the film growth mechanism.
Show PACS
78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Defects in preamorphized single‐crystal silicon

J. R. Ayres, S. D. Brotherton, J. M. Shannon, and J. Politiek

Appl. Phys. Lett. 57, 2214 (1990); http://dx.doi.org/10.1063/1.103895 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
Direct electrical characterization of 1‐μm‐thick Si+ preamorphized and epitaxially regrown silicon layers has revealed a low concentration of residual deep‐level defects within the regrown layer. A deep‐level trap at Ec −0.40 eV has been found associated with the amorphous‐crystalline boundary dislocation loops. In addition, a near mid‐gap trap at Ev+0.54 eV, observed in p‐type samples, is believed to be responsible for a spatially localized generation current of ∼2×10−6 A/cm2 associated with the dislocation loops.
Show PACS
71.55.Ht Other nonmetals
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.72.uf Ge and Si
61.80.Jh Ion radiation effects

Characterization of rapid thermally nitrided SiO2/Si interface by the conductance technique

Z. H. Liu, P. T. Lai, and Y. C. Cheng

Appl. Phys. Lett. 57, 2217 (1990); http://dx.doi.org/10.1063/1.104161 (3 pages)

Full Text: | Download PDF

Show Abstract
Device quality SiO2 films with a thickness of 15 nm have been thermally nitrided in NH3 by a rapid thermal processing technique. The properties of the interface between these films and a Si substrate have been investigated by a conductance technique. The results show that the nitridation increases the density and time constant of interface states and enhances the fluctuation of surface potential, but changes the hole capture cross section only slightly. Specifically, nitridation introduces a peak of interface states at 0.25 eV below midgap and the energy dependency of hole capture cross section is suppressed. Using a patchwork model, the surface potential fluctuation can be well simulated and a surface charge nonuniformity with a long‐wavelength distribution may exist. These are consistent with the fact that nitridation induces a high oxide charge density. Experimental data show that all these properties depend on nitridation time and temperature.
Show PACS
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators
85.30.De Semiconductor-device characterization, design, and modeling

Observation of Lomer–Cottrell locks in SiGe strained layers

P. Ferret, B. J. Robinson, D. A. Thompson, and J.‐M. Baribeau

Appl. Phys. Lett. 57, 2220 (1990); http://dx.doi.org/10.1063/1.103896 (2 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
Misfit dislocations in the SiGe system are usually not dissociated. We present the first observation of a Lomer–Cottrell lock array in a Si/Si1−xGex/Si heterostructure (0.4<x<0.6). We describe the character of the stacking faults and the partial dislocations which form the locks.
Show PACS
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.Nn Stacking faults and other planar or extended defects
68.35.Dv Composition, segregation; defects and impurities
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Excimer‐laser‐induced crystallization of hydrogenated amorphous silicon

K. Winer, G. B. Anderson, S. E. Ready, R. Z. Bachrach, R. I. Johnson, F. A. Ponce, and J. B. Boyce

Appl. Phys. Lett. 57, 2222 (1990); http://dx.doi.org/10.1063/1.103897 (3 pages) | Cited 27 times

Full Text: | Download PDF

Show Abstract
The electronic transport properties and structural morphology of fast‐pulse excimer‐laser‐ crystallized hydrogenated amorphous silicon (a‐Si:H) thin films have been measured. The room‐temperature dark dc conductivities and Hall mobilities increase by several orders of magnitude at well‐defined laser energy density thresholds which decrease as the impurity concentration in the films increases. The structural morphology of the films suggests an impurity‐induced reduction of the a‐Si:H melt temperature as the origin of this behavior.
Show PACS
64.70.D- Solid-liquid transitions
65.20.-w Thermal properties of liquids
65.40.gd Entropy
72.80.Ng Disordered solids
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)

Multicomponent structure in the temperature‐dependent persistent photoconductivity due to different DX centers in AlxGa1−xAs:Si

G. Brunthaler and K. Köhler

Appl. Phys. Lett. 57, 2225 (1990); http://dx.doi.org/10.1063/1.103898 (3 pages) | Cited 20 times

Full Text: | Download PDF

Show Abstract
The persistent photoconductivity of Si‐doped AlGaAs has been investigated by temperature‐dependent resistance and Hall effect measurements. After illuminating the samples at low temperature, we observe for the first time distinct structures in the temperature‐dependent carrier concentration during the subsequent heating process. These structures are interpreted in terms of the existence of different DX levels below the conduction‐band edge.
Show PACS
71.55.Eq III-V semiconductors
72.80.Ey III-V and II-VI semiconductors
72.40.+w Photoconduction and photovoltaic effects

Molecular beam epitaxial growth of high quality GaAs on untilted (001) Si substrates assisted by electron beam irradiation

Jae‐Young Leem, Deuk‐Young Kim, Tae‐Won Kang, Jae‐Jin Lee, and Jae‐Eung Oh

Appl. Phys. Lett. 57, 2228 (1990); http://dx.doi.org/10.1063/1.103899 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
Using molecular beam epitaxy assisted by an electron beam irradiation with a beam energy of 50 keV at an angle of incidence 5°, we have successfully grown high quality GaAs layers on untilted (001)Si substrates. Raman spectra show that this technique reduces crystalline imperfections usually found in GaAs layers grown (001)Si substrates by a factor of 20, clearly demonstrating the effectiveness of this technique. Typical low‐temperature photoluminescence spectra of undoped GaAs on Si contain four features at emission energies of 1.503, 1.488, 1.471, and 1.434 eV. The full width at half maximum (FWHM) of the bound excitonic peak with heavy holes is 2.8 meV, which can be one of the narrowest ever reported. The incident electron beam is expected to play several roles, such as cleaning Si surfaces by removing carbon/oxygen residuals, enhancement of migration rates of adatoms on the growing surface, and acceleration of the single‐domain formation during the growth.
Show PACS
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.30.Fs III-V and II-VI semiconductors
78.55.Cr III-V semiconductors
61.80.Fe Electron and positron radiation effects

Novel electron interferometers using field‐induced decoupling in double quantum well structures

Masahiro Okuda, Kazuhito Fujii, and Akira Shimizu

Appl. Phys. Lett. 57, 2231 (1990); http://dx.doi.org/10.1063/1.103900 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
Novel Aharonov–Bohm type electron interferometers are proposed, which have no curved electron waveguide structures to form a ring geometry. But instead the ring geometry is effectively constructed in a straight double quantum well structure, by the control of the shapes of the wave functions by electric fields. The interferometer has a perfect single‐mode channel in each arm of the interferometer as well as the exact 1:1 branching ratio to the two arms, for each electron moving in the plane of the ring.
Show PACS
07.78.+s Electron, positron, and ion microscopes; electron diffractometers
41.75.Fr Electron and positron beams

Electro‐optical bistability in strained InxGa1−xAs/Al0.15Ga0.85As multiple quantum wells

Kenzo Fujiwara, Kenji Kawashima, Kikuo Kobayashi, and Naokatsu Sano

Appl. Phys. Lett. 57, 2234 (1990); http://dx.doi.org/10.1063/1.103901 (3 pages) | Cited 13 times

Full Text: | Download PDF

Show Abstract
Using photocurrent spectroscopy, we have studied optical absorption properties of strained InxGa1−xAs/Al0.15Ga0.85As multiple quantum wells grown by molecular beam epitaxy in the presence of electric fields perpendicular to the heterointerface. In the wavelength region where the bulk GaAs substrate is transparent, we observe the quantum confined Stark effect. Optical bistability of a self‐electro‐optic effect device is demonstrated at room temperature without removal of the GaAs substrate.
Show PACS
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.65.Pc Optical bistability, multistability, and switching, including local field effects
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.50.Pz Photoconduction and photovoltaic effects

Conservation and filling of neutral hole traps in SiO2 during ionizing radiation exposure

L. Lipkin, A. Reisman, and C. K. Williams

Appl. Phys. Lett. 57, 2237 (1990); http://dx.doi.org/10.1063/1.104162 (2 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
The question of whether ionizing radiation creates fixed positive charge and/or neutral hole traps, or simply fills existing neutral hole traps has been examined by equating the density of intrinsic neutral hole traps, present before irradiation, with the sum of fixed positive charge and the remaining neutral hole traps present after x‐ray irradiation. The total number of positive Coulombic and neutral hole traps was found to remain constant, regardless of the level of radiation the device receives. This indicates strongly that fixed positive charge represents filled intrinsic hole traps and that additional hole trapping defects, except for a small amount of fixed negative charge, are not generated by ionizing radiation in the photon energy range studied.
Show PACS
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Ng Insulators
85.30.De Semiconductor-device characterization, design, and modeling

Epitaxy of (100) Cu on (100) Si by evaporation near room temperatures: In‐plane epitaxial relation and channeling analysis

Chin‐An Chang, Joyce C. Liu, and Joseph Angilello

Appl. Phys. Lett. 57, 2239 (1990); http://dx.doi.org/10.1063/1.103902 (2 pages) | Cited 36 times

Full Text: | Download PDF

Show Abstract
The epitaxial growth of (100) Cu on (100) Si reported recently using evaporation is analyzed to determine the epitaxial relation between Cu and Si, and also the crystalline quality of the Cu films. A 45° rotation between the (100) plane of Cu and that of Si around their (001) axis is shown to be needed for the lattice match. Such an epitaxial relation is confirmed by the grazing angle x‐ray diffraction, with the [010] of Cu parallel to the [011] of Si. The channeling analysis of a 2‐μm‐thick Cu film shows a 10% minimum near the surface.
Show PACS
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
68.35.Fx Diffusion; interface formation
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close