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3 Dec 1990

Volume 57, Issue 23, pp. 2393-2506

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Optical nonlinearity of CdSe microcrystallites in a sputtered SiO2 film

J. Yumoto, H. Shinojima, N. Uesugi, K. Tsunetomo, H. Nasu, and Y. Osaka

Appl. Phys. Lett. 57, 2393 (1990); http://dx.doi.org/10.1063/1.104176 (3 pages) | Cited 10 times

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Optical nonlinearity of a sputtered SiO2 film containing CdSe microcrystallites with an average diameter of 15 Å is measured by degenerate four‐wave mixing (DFWM) experiments. An effective nonlinear cross section σeff of 1.4×10−16 cm2 is obtained. The DFWM signal as a function of the probe delay time shows biexponential behavior with a fast decay time of 10 ps and a slow decay time of 60 ps, which give fast and slow carrier recombination times as 20 ps and 120 ps. The third‐order susceptibility ‖χ(3)‖ is estimated to be 1.3×10−8 esu. The photodarkening and laser annealing effects which are serious problems for device applications are not observed.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.47.-p Spectroscopy of solid state dynamics
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.66.Jg Amorphous semiconductors; glasses

Single‐mode semiconductor optical waveguides with large dimensions suitable for compact bend applications

R. J. Deri, A. Shahar, E. Colas, R. N. Thurston, W. J. Tomlinson, A. Yi‐Yan, and M. Seto

Appl. Phys. Lett. 57, 2396 (1990); http://dx.doi.org/10.1063/1.104112 (3 pages) | Cited 7 times

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We demonstrate a novel waveguide structure for realization of integrated optics with compact waveguide bends (radii≊1 mm), low propagation loss (0.45 dB/cm), and large guide dimensions (5 μm width) to facilitate input coupling. Experimental results using single‐mode GaAs/AlGaAs heterostructure guides at 1.52 μm wavelength are presented.
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42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics
42.81.Dp Propagation, scattering, and losses; solitons

Picosecond all‐optical logic gate in a nonlinear organic étalon

V. S. Williams, Z. Z. Ho, N. Peyghambarian, W. M. Gibbons, R. P. Grasso, M. K. O’Brien, P. J. Shannon, and S. T. Sun

Appl. Phys. Lett. 57, 2399 (1990); http://dx.doi.org/10.1063/1.103857 (3 pages) | Cited 7 times

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An all‐optical logic gate has been demonstrated in a nonlinear organic étalon using femtosecond laser pulses. The logic gate consists of a guest‐host organic thin film, 7‐[4‐[(4‐hexyloxyphenyl)azo](naphthyl)azo‐(2,3‐dihydro‐1,3‐dimethyl‐2‐octyl)] perimidine doped in poly(methyl methacrylate), sandwiched between two highly reflective mirrors. It shows a subpicosecond switch‐on time and a switch‐off or recovery time that has a fast, ≂4 ps component and slower components. A maximum contrast ratio of ≂2 between the switch‐on and switch‐off states of the optical gate was obtained. The nonlinear index of refraction is also measured from this Fabry–Perot interferometer to be Δn=0.005.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.79.Dj Gratings
07.60.Ly Interferometers

Cavity length dependence of the wavelength of strained‐layer InGaAs/GaAs lasers

T. R. Chen, Y. H. Zhuang, L. E. Eng, and A. Yariv

Appl. Phys. Lett. 57, 2402 (1990); http://dx.doi.org/10.1063/1.103858 (2 pages) | Cited 10 times

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The lasing wavelength of a strained‐layer InGaAs/GaAs single quantum well laser has been found to depend strongly on the cavity length. The relationship between the lasing wavelength and the cavity length was established experimentally and a cavity length tuning mechanism for a quantum well laser is thus made possible.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems

Direct determination of electron mobility in photorefractive Bi12SiO20 by a holographic time‐of‐flight technique

J. P. Partanen, J. M. C. Jonathan, and R. W. Hellwarth

Appl. Phys. Lett. 57, 2404 (1990); http://dx.doi.org/10.1063/1.103859 (3 pages) | Cited 29 times

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The time development of a photorefractive grating created by intersecting 30 ps (532 nm) beams in a well‐characterized Bi12SiO20 crystal (in a static field around 1 kV/cm) unambiguously reveals the mobility of photoexcited electrons to be 0.24±0.07 cm2/V s through what is essentially a ‘‘time‐of‐flight’’ measurement.
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63.10.+a General theory
72.20.Fr Low-field transport and mobility; piezoresistance
78.20.Jq Electro-optical effects

Angle‐dependent laser‐induced voltages in room‐temperature polycrystalline wafers of YBa2Cu3O7−x

K. L. Tate, E. F. Hilinski, and S. C. Foster

Appl. Phys. Lett. 57, 2407 (1990); http://dx.doi.org/10.1063/1.103860 (3 pages) | Cited 3 times

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Room‐temperature laser‐induced voltages were observed in unsupported, polycrystalline wafers of YBa2Cu3O7−x in the absence of a transport current. Peak voltages of ∼1 V were detected in response to 40 mJ pulses of 532 nm light. The rise and fall times for the signals were detector limited. The half widths of the signals were instrument response limited (laser pulsed limited for a 10 ns laser pulse and digitizer limited for a 30 ps laser pulse). At fixed pulse energy, the induced peak voltage scales as the sine of the angle of incidence of the laser beam and is nulled at normal incidence. The magnitude of the signal as a function of sample thickness, preparation, and laser excitation wavelength is discussed.
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73.50.Pz Photoconduction and photovoltaic effects
74.25.N- Response to electromagnetic fields
74.70.-b Superconducting materials other than cuprates
74.78.-w Superconducting films and low-dimensional structures

Lasing phase diagram for semiconductor surface‐emitting lasers

P. L. Gourley

Appl. Phys. Lett. 57, 2410 (1990); http://dx.doi.org/10.1063/1.103861 (3 pages) | Cited 5 times

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A new tool, a lasing phase diagram, for understanding semiconductor surface‐emitting injection lasers has been synthesized. The diagram shows how to design laser resonators which have the lowest possible threshold currents and highest operating efficiencies. To create this diagram, the rate equations describing the photon and electron‐hole densities in the laser are solved for the steady‐state conditions. The solutions are compactly summarized on a single lasing phase diagram which shows the lasing threshold current and power efficiency contours as functions of two structural parameters (mirror loss and number of quantum wells) in a two‐dimensional plane. The plane is separated into three regions corresponding to lasing, marginal lasing, and nonlasing structures. The diagram predicts that, in the high reflectance limit, the threshold current is independent of mirror loss and scales directly with the number of quantum wells in the active region. The phase diagram has been successfully used to understand the lasing characteristics of many different laser structures recently reported.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Ah General laser theory
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Room‐temperature blue lasing action in (Zn,Cd)Se/ZnSe optically pumped multiple quantum well structures on lattice‐matched (Ga,In)As substrates

H. Jeon, J. Ding, A. V. Nurmikko, H. Luo, N. Samarth, J. K. Furdyna, W. A. Bonner, and R. E. Nahory

Appl. Phys. Lett. 57, 2413 (1990); http://dx.doi.org/10.1063/1.103862 (3 pages) | Cited 64 times

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We report on studies of optically pumped laser action in (Zn,Cd)Se/ZnSe multiple quantum well structures prepared by molecular beam epitaxy on lattice‐matched bulk (Ga,In)As substrates. Room‐temperature lasing under pulsed excitation with threshold pump intensity at I≊500 kW/cm2 has been achieved, together with high repetition ‘‘quasi‐continuous’’ mode operation at temperatures so far up to 100 K.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Absorption spectroscopy on Hg+ and excited Hg in Hg‐Ar discharges

R. C. Wamsley, J. E. Lawler, J. H. Ingold, L. Bigio, and V. D. Roberts

Appl. Phys. Lett. 57, 2416 (1990); http://dx.doi.org/10.1063/1.103863 (3 pages) | Cited 11 times

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We describe an absorption spectroscopy experiment at 194 nm on Hg+, ground‐state atomic mercury ions, and at visible wavelengths on Hg∗, excited 63Po mercury atoms in Hg‐Ar discharges. This experiment is used to map the absolute density of Hg+ and Hg∗ in the cathode region of Hg‐Ar discharge lamps operated in the hot‐cathode mode.
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.80.Tn Other gas discharges
52.80.Hc Glow; corona

Early stages of growth of GaAs on Si observed by scanning tunneling microscopy

D. K. Biegelsen, R. D. Bringans, J. E. Northrup, and L. E. Swartz

Appl. Phys. Lett. 57, 2419 (1990); http://dx.doi.org/10.1063/1.103864 (3 pages) | Cited 7 times

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Using a system coupling molecular beam deposition, scanning tunneling microscopy, and Auger spectroscopy in a connected ultrahigh‐vacuum environment, we have observed the initial stages of GaAs growth on vicinal Si(100), including As termination, ordered Ga overlayers, and subsequent competition between two‐ and three‐dimensional structures.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Cathodoluminescence study of erbium in La1−xErxF3 epitaxial layers on Si(111)

H. D. Müller, J. Schneider, H. Lüth, and R. Strümpler

Appl. Phys. Lett. 57, 2422 (1990); http://dx.doi.org/10.1063/1.104177 (3 pages) | Cited 8 times

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Erbium‐substituted La1−xErxF3 lanthanum trifluoride epitaxial layers have been grown on Si(111) substrates by molecular beam epitaxy (MBE). Strong near‐infrared luminescence, peaked at 1.54 μm, was observed from such films under electron beam excitation. This cathodoluminescence arises from the intra‐4f‐shell transitions 4I13/2→4I15/2 of Er3+(4f11). The infrared spectra reveal that MBE‐grown LaF3 layers on Si(111) crystallize in the hexagonal tysonite structure, typical for bulk LaF3 single crystals.
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78.60.Hk Cathodoluminescence, ionoluminescence
73.61.Ng Insulators
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Silicon epitaxial growth on silicon‐on‐insulator structures by rapid thermal processing chemical vapor deposition

T. Y. Hsieh, K. H. Jung, and D. L. Kwong

Appl. Phys. Lett. 57, 2425 (1990); http://dx.doi.org/10.1063/1.103865 (3 pages)

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We have used rapid thermal processing chemical vapor deposition (RTPCVD) for silicon epitaxial growth on silicon‐on‐insulator (SOI) substrates. The surface morphology of SOI rapid thermal annealed in different ambients was also examined. A short, high‐temperature H2 anneal formed an undulating SOI surface, which planarized after RTPCVD. However, severe surface pitting was observed after a high‐temperature N2 anneal. No significant changes in the defect density of the silicon layers occurred after RTPCVD and no stacking faults were observed in the epilayers.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Evidence for anomalous structural relaxation in SiO2 films

R. W. Rendell and K. L. Ngai

Appl. Phys. Lett. 57, 2428 (1990); http://dx.doi.org/10.1063/1.103866 (3 pages) | Cited 7 times

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Evidence from both thermal oxide films and bulk samples is discussed for whether amorphous SiO2 exhibits the anomalous property that the annealing of volume or refractive index may become more rapid at high densities solely due to structural effects. Unlike typical glasses, volume changes in SiO2 are not governed by free volume but by reorientations of SiO4 tetrahedra. This may be reflected in the larger initial volume changes found in the annealing of bulk SiO2 corresponding to higher initial densities at the same temperature. It is also suggested by an apparent reverse asymmetry between volume expansion and volume contraction which appears to be unique to SiO2 but not previously noted. These features are incorporated into a self‐consistent annealing model for an analysis of the Landsberger–Tiller annealing data for thermally grown SiO2 films which is based on structural relaxation and which is compatible with high temperature data.
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78.66.Jg Amorphous semiconductors; glasses
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
68.60.Bs Mechanical and acoustical properties
68.35.Gy Mechanical properties; surface strains

Barrier layers for realization of high capacitance density in SrTiO3 thin‐film capacitor on silicon

Toshiyuki Sakuma, Shintaro Yamamichi, Shogo Matsubara, Hiromu Yamaguchi, and Yoichi Miyasaka

Appl. Phys. Lett. 57, 2431 (1990); http://dx.doi.org/10.1063/1.103867 (3 pages) | Cited 83 times

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High dielectric constant SrTiO3 thin films were sputter deposited on barrier layers/Si substrate to fabricate a capacitor for dynamic random access memories. Dielectric constant (ϵr) values of 140–210 were achieved for the 150‐nm‐thick SrTiO3 films using a Pt/Ti or Pt/Ta double‐layer barrier. In the Pt(50 nm)/Ti(10 nm), Pt(50 nm)/Ti(50 nm), and Pt(50 nm)/Ta(10 nm) barrier, effective ϵr decreased by annealing in the temperature range between 450 and 550 °C, where the interdiffusion of Pt and Si was confirmed by x‐ray diffraction analysis and cross‐sectional transmission electron microscopy. In the Pt(50 nm)/Ta barrier, increase of the Ta thickness from 10 to 50 nm brought out a remarkable improvement of endurance to high‐temperature annealing. That is, in the Pt(50 nm)/Ta(50 nm) barrier, large ϵr value (∼200) was maintained even with annealing at up to 700 °C.
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77.55.-g Dielectric thin films
68.35.Fx Diffusion; interface formation
81.15.Cd Deposition by sputtering
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Observation of an ordered structure in the initial stage of Ge/Si heteroepitaxial growth

N. Ohshima, Y. Koide, K. Itoh, S. Zaima, and Y. Yasuda

Appl. Phys. Lett. 57, 2434 (1990); http://dx.doi.org/10.1063/1.103868 (3 pages) | Cited 10 times

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An ordered structure with the double periodicity in a 〈111〉 direction has been found by in situ reflection high‐energy electron diffraction observation in the initial stage of Ge films grown on (100)Si and (811)Si substrate surfaces by GeH4 gas source molecular beam epitaxy. The ordered structure is formed on {111} planes parallel to the side planes of 〈011〉 steps on {811} facets of Ge growing islands on both substrates. The formation is observed at substrate temperatures of 300–700 °C and is considered to result from solid phase reactions at the interfaces during growth.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.Fx Diffusion; interface formation
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Selective‐area epitaxial growth of gallium arsenide on silicon substrates patterned using a scanning tunneling microscope operating in air

J. A. Dagata, W. Tseng, J. Bennett, C. J. Evans, J. Schneir, and H. H. Harary

Appl. Phys. Lett. 57, 2437 (1990); http://dx.doi.org/10.1063/1.103869 (3 pages) | Cited 8 times

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Selective‐area epitaxial growth of gallium arsenide on n‐Si(100) substrates is reported, where the oxide (SiOx) mask consists of 1–2 monolayer‐thick features patterned onto a silicon substrate using a scanning tunneling microscope (STM) operating in air. The technique for generating the STM patterns on hydrogen‐passivated silicon was reported recently [J. A. Dagata, J. Schneir, H. H. Harary, C. J. Evans, M. T. Postek, and J. Bennett, Appl. Phys. Lett. 56, 2001 (1990)]. The GaAs epilayer was grown by migration‐enhanced epitaxy at 580 °C and its morphology was investigated by scanning electron microscopy. The chemical selectivity of the STM‐patterned regions was verified by imaging time‐of‐flight secondary‐ion mass spectrometry. The implications of these results for the development of a unique, STM‐based nanostructure fabrication technology are discussed.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
85.40.Hp Lithography, masks and pattern transfer
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Low‐temperature Si molecular beam epitaxy: Solution to the doping problem

H.‐J. Gossmann, E. F. Schubert, D. J. Eaglesham, and M. Cerullo

Appl. Phys. Lett. 57, 2440 (1990); http://dx.doi.org/10.1063/1.103870 (3 pages) | Cited 38 times

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A major problem in group IV molecular beam epitaxy (MBE) is the difficulty to incorporate and control dopants due to the low incorporation probability and strong segregation in Si at typical growth temperatures. It is demonstrated here that growth at low temperatures yields a solution to this doping problem making thermal, coevaporative doping with excellent control possible in Si MBE without the need for any post‐growth annealing. Unity incorporation and activation of Sb with concentrations reaching 5×1019 cm−3 are achieved for epitaxial growth of Si on Si(100) at temperatures of 325 °C. Hall electron mobilities in the films are close to bulk values indicating the high quality of the films. Capacitance‐voltage measurements on Sb δ‐doped films have full widths at half maximum of ≲50 Å, the narrowest Sb‐doping profiles in Si determined with an electrical technique.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Dn Low-field transport and mobility; piezoresistance

Optical characterization of silicon‐on‐insulator material obtained by sequential implantation and annealing

A. Pérez, J. Samitier, A. Cornet, J. R. Morante, P. L. F. Hemment, and K. P. Homewood

Appl. Phys. Lett. 57, 2443 (1990); http://dx.doi.org/10.1063/1.104178 (3 pages) | Cited 4 times

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The optical characterization of silicon‐on‐insulator structures formed by sequential implantation and annealing (SIA) has been carried out. The infrared transmission spectra show peaks characteristic of a thermal oxide, and confirm the high quality of the buried oxide. Moreover, the spectra obtained from these SIA samples, in comparison to those obtained from equivalent samples made with a single implant, show a shift of the main absorption peak to higher wave numbers, which can be attributed to excess oxygen. The higher concentration of oxygen in the SIA samples is corroborated by photoluminescence measurements which show the presence of dislocation‐related bands broadened by the presence of oxygen.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.30.Hv Other nonmetallic inorganics
78.55.Hx Other solid inorganic materials

Monte Carlo simulation of hot electrons in silicon p‐i‐n cold cathodes

H. M. J. Boots, M. F. H. Schuurmans, D. Arnold, J. M. Higman, and K. Hess

Appl. Phys. Lett. 57, 2446 (1990); http://dx.doi.org/10.1063/1.103871 (3 pages) | Cited 2 times

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Monte Carlo simulation of electron transport in p‐i‐n cold cathodes yields an exponential dependence of the efficiency on the work function similar to the relation found in the experiment. The effective temperature characterizing the exponential dependence is higher in the model than in the experiment and is not equal to the calculated electron temperature. The efficiency at breakdown decreases with the intrinsic layer width and is very sensitive to the X‐X intervalley scattering rates.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Ht High-field and nonlinear effects

Investigation of carrier transport in graded gap superlattices by time correlated single photon counting

Andrea Lacaita, Stephen E. Ralph, Federico Capasso, and Roger J. Malik

Appl. Phys. Lett. 57, 2449 (1990); http://dx.doi.org/10.1063/1.103872 (3 pages) | Cited 2 times

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Carrier transport in asymmetric superlattice structures is investigated by a photoluminescence technique based on single photon counting. Hole drift times as short as 40 ps have been measured at room temperature in a compositionally graded AlGaAs superlattice with a 540 Å period. Our studies also reveal the complex dynamics of the carriers in these structures and particularly the role of quasi‐electric fields, photoinduced fields, and traps. Excellent agreement with previous measurements of charge transport optical nonlinearities based on electro‐optic sampling is found.
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78.47.-p Spectroscopy of solid state dynamics
78.55.Cr III-V semiconductors
71.55.Eq III-V semiconductors

Correlation between radiative transitions and structural defects in zinc selenide epitaxial layers

K. Shahzad, J. Petruzzello, D. J. Olego, D. A. Cammack, and J. M. Gaines

Appl. Phys. Lett. 57, 2452 (1990); http://dx.doi.org/10.1063/1.103875 (3 pages) | Cited 53 times

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We present low‐temperature photoluminescence and transmission electron microscopy data to show that two transitions I0V at ∼2.774 eV and Y0 at ∼2.60 eV, frequently observed in unintentionally doped zinc selenide epitaxial layers, are directly related to structural defects. It is shown that these transitions are strong in those samples which have very low background impurities and high density of structural defects and weak in those cases that have either high background impurities or low density of structural defects.
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71.55.Gs II-VI semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.55.Et II-VI semiconductors

Liquid phase epitaxy regrowth of two‐dimensional electron gas on GaAs patterned by in situ meltback

A. Zaslavsky, M. R. Frei, and D. C. Tsui

Appl. Phys. Lett. 57, 2455 (1990); http://dx.doi.org/10.1063/1.103876 (3 pages) | Cited 2 times

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Selective in situ meltback of V‐groove channels followed by liquid phase epitaxial regrowth of a modulation‐doping AlGaAs layer is used to produce a two‐dimensional electron gas on a patterned GaAs substrate. The in situ meltback patterning of the substrate forms channels made up of definite crystallographic planes. Characterization of the two‐dimensional electron gas by magnetotransport measurements in a tilted magnetic field at 4.2 K confirms that the electron gas exists on all the planes that comprise the channels. Since the regrowth surface is exposed neither to air nor chemical etchants, this technique holds promise of producing high quality interfaces on patterned GaAs.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
81.65.-b Surface treatments
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Infrared absorption in n‐type ZnSe/GaAs heteroepitaxial films

A. Deneuville, G. Lindauer, D. B. Tanner, R. M. Park, and P. H. Holloway

Appl. Phys. Lett. 57, 2458 (1990); http://dx.doi.org/10.1063/1.103850 (3 pages)

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We report on the variation of the absorption coefficient αf with wave number W, for Cl‐doped n‐type (9.4×1016–8×1018 cm−3) ZnSe epitaxial films grown on GaAs. Below the classical mid‐infrared range of W, αf has large values (1.6×103–2.11×104 cm−1) appropriate for thin‐film measurements, with αf proportional to W−p. Large variations of αf and p occur as a function of the free‐electron concentration. The results are compared to a recent theoretical model by Ruda [J. Appl. Phys. 61, 3035 (1987)], which is specific to ZnSe.
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78.30.Fs III-V and II-VI semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.50.Pz Photoconduction and photovoltaic effects

Dual‐side contact formation on isolated diamond films

J. Engemann, H. Keller, D. K. Reinhard, B. Huang, and J. Asmussen

Appl. Phys. Lett. 57, 2461 (1990); http://dx.doi.org/10.1063/1.103851 (3 pages) | Cited 7 times

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A method is described for transferring deposited diamond films to a second substrate, thereby providing access to the diamond film back surface and also allowing post‐deposition contact formation to both surfaces of the film. The availability of both sides of the diamond film allows increased experimental control and flexibility for investigation of electrical properties and contact phenomena. The films are deposited in a microwave plasma disk reactor onto silicon substrates and transferred to epoxy substrates. Also presented is a comparison of the roughness of the top and bottom film surfaces, a Raman spectrum of the transferred film, and current‐voltage characteristics of samples with dual‐side contacts.
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73.61.Ng Insulators
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology

Thermal donor formation in Fe‐doped semi‐insulating InP

H. J. von Bardeleben, J. C. Bourgoin, K. Kainosho, and O. Oda

Appl. Phys. Lett. 57, 2464 (1990); http://dx.doi.org/10.1063/1.103852 (2 pages) | Cited 12 times

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Single wafers of Fe‐doped semi‐insulating InP have been annealed under Si3N4 capping in the 663–760 °C temperature range. Electron paramagnetic resonance (EPR) measurements performed on single crystals from different parts of the wafers show that the thermal annealing introduces various deep donor centers in concentration up to 1016 cm−3. The donor formation rate increases strongly for annealing temperatures higher than 700 °C. From EPR transient spectroscopy the thermal ionization energy of the dominant donor has been determined to Ec−0.34 eV. The results are correlated with previous electrical resistivity and photoluminescence measurements.
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71.55.Eq III-V semiconductors
61.05.Qr Magnetic resonance techniques; Mössbauer spectroscopy (for structure determination only)
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