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17 Dec 1990

Volume 57, Issue 25, pp. 2629-2732

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Temperature dependence of femtosecond electromagnetic radiation from semiconductor surfaces

B. B. Hu, X.‐C. Zhang, and D. H. Auston

Appl. Phys. Lett. 57, 2629 (1990); http://dx.doi.org/10.1063/1.103829 (3 pages) | Cited 10 times

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We present observation of temperature dependence of optically induced femtosecond electromagnetic radiation from several semiconductors. When the sample temperature decreases from 280 to 80 K, over 4 times and 21 times increases of the radiated peak field and radiated energy have been found. A large shift of the frequency spectrum of the radiation was observed when the InSb sample temperature was tuned over this range.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.47.-p Spectroscopy of solid state dynamics

Broad wavelength tunability in gain‐levered quantum well semiconductor lasers

K. Y. Lau

Appl. Phys. Lett. 57, 2632 (1990); http://dx.doi.org/10.1063/1.103830 (3 pages) | Cited 5 times

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Using a gain lever effect in a single quantum well laser, it was observed that the wavelength can be electronically tuned over a range of 90 Å. Optimal device geometry that leads to a maximum tuning range was investigated.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes

Ultra‐efficient erbium‐doped fiber amplifier

Yasuo Kimura, Masataka Nakazawa, and Kazunori Suzuki

Appl. Phys. Lett. 57, 2635 (1990); http://dx.doi.org/10.1063/1.103831 (3 pages) | Cited 1 time

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The gain and saturation characteristics of 0.98 μm and 1.48 μm pumping are investigated for an erbium‐doped fiber amplifier with a mode field diameter of 4.8 μm, and a relative refractive index difference of 1.67%. Gain coefficients of 10.2 dB/mW at 0.98 μm pumping and 5.1 dB/mW at 1.48 μm pumping are obtained. The saturation output power is +12 dBm with a launched pump power of 50 mW for 1.48 μm pumping. The energy conversion efficiency at 1.48 μm pumping reaches as high as 71%.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.81.Dp Propagation, scattering, and losses; solitons
42.81.Gs Birefringence, polarization
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Novel AlGaInAs/AlInAs lasers emitting at 1 μm

C. J. Chang‐Hasnain, R. Bhat, C. E. Zah, M. A. Koza, F. Favire, and T. P. Lee

Appl. Phys. Lett. 57, 2638 (1990); http://dx.doi.org/10.1063/1.103809 (3 pages) | Cited 1 time

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We report the first AlGaInAs/AlInAs lasers emitting at 1 μm. The lasers are grown by organometallic chemical vapor deposition lattice matched to an InP substrate. We achieved 1.6 kA/cm2 threshold current density and 370 mW output power from 25‐μm‐wide gain‐guided double heterostructure lasers. The lasers exhibit linear optical power versus current characteristics and stable near‐ and far‐field patterns. Threshold currents as low as 50 mA were obtained with 7‐μm‐wide ridge‐waveguide index‐guided lasers. To our knowledge, this threshold current and the threshold current density are the lowest reported to date for lasers made with this material system.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
72.80.Ey III-V and II-VI semiconductors
85.60.Jb Light-emitting devices

Ultraviolet and blue holographic lithography of ZnSe epilayers and heterostructures with feature size to 100 nm and below

W. Walecki, W. R. Patterson, A. V. Nurmikko, H. Luo, N. Samarth, J. K. Furdyna, M. Kobayashi, S. Durbin, and R. L. Gunshor

Appl. Phys. Lett. 57, 2641 (1990); http://dx.doi.org/10.1063/1.103810 (3 pages) | Cited 15 times

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We have employed short‐wavelength holographic laser lithography and reactive ion etching to define wire and dot‐like patterns in ZnSe thin epitaxial films and heterostructures with spatial feature size to better than 100 nm. Photoluminescence measurements suggest that surface damage from etching may be much less severe than in III‐V semiconductors.<hedend>
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81.65.-b Surface treatments
42.40.My Applications
42.40.Kw Holographic interferometry; other holographic techniques
85.40.Hp Lithography, masks and pattern transfer

Quantum well lasers in operation for four years

R. G. Waters and S. L. Yellen

Appl. Phys. Lett. 57, 2644 (1990); http://dx.doi.org/10.1063/1.103811 (2 pages)

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AlGaAs quantum well lasers operating at 808 nm with cw lifetimes exceeding 30 000 h are reported. The devices, grown by metalorganic chemical vapor deposition, were driven at 200 mW total optical power and were not coated. A study of diode configuration shows that longevity is enhanced by using a long cavity and by junction‐down mounting.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Early formation of chemical vapor deposition diamond films

Sumio Iijima, Yumi Aikawa, and Kazuhiro Baba

Appl. Phys. Lett. 57, 2646 (1990); http://dx.doi.org/10.1063/1.103812 (3 pages) | Cited 100 times

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Nanometer‐size diamond particles formed on a silicon substrate by the hot‐filament chemical vapor deposition method were examined by a high‐resolution electron microscope. The particles developed well‐faceted cuboctahedral habits. Examination of their morphologies and microstructures provides a wealth of information on their crystal growth mechanism. The effect of the pretreatment of the substrate by diamond powder, which has been known to enhance thin‐film growth, was found to be due to seeding by ‘‘diamond dust’’ on the substrate surface.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.65.-b Surface treatments

Analysis of SF6 and F2 plasma etched silicon surfaces: An x‐ray photoelectron spectroscopy investigation

P. Brault, P. Ranson, H. Estrade‐Szwarckopf, and B. Rousseau

Appl. Phys. Lett. 57, 2649 (1990); http://dx.doi.org/10.1063/1.103813 (2 pages) | Cited 4 times

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X‐ray photoelectron spectroscopy measurements have been performed on silicon surfaces etched with SF6 and F2 plasmas. It is shown that even if the same number of fluorine atoms is involved in both etching processes, the surfaces are quite different. The SF6 etched surface shows an overlayer thinner than the F2 etched one, but both overlayers have similar compositions.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
81.65.-b Surface treatments
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
68.55.Nq Composition and phase identification

Buried monocrystalline aluminum layers in beryllium using ion implantation

D. W. Brown, R. G. Musket, and Z. A. Munir

Appl. Phys. Lett. 57, 2651 (1990); http://dx.doi.org/10.1063/1.103793 (3 pages) | Cited 2 times

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A buried monocrystalline aluminum layer was formed in (1010) beryllium by implanting 200 keV Al+ to a dose of 1.1×1018 Al/cm2 and subsequently annealing the implanted beryllium at 500 °C for 1 h. Rutherford backscattering showed layer formation was critically dependent on aluminum dose. Electron microscopy revealed a correlation between this critical dependence and the dose dependence of the density of columnar beryllium defects extending through the aluminum layers from the beryllium overlayer to the beryllium bulk. Several common features found between the formation of this elemental layer and formation of buried compound layers strongly suggest that similar precipitate coarsening behavior is responsible for both.
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61.72.up Other materials
68.55.Nq Composition and phase identification
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.20.-n Methods of materials synthesis and materials processing

Enhanced hardness in lattice‐matched single‐crystal TiN/V0.6Nb0.4N superlattices

P. B. Mirkarimi, L. Hultman, and S. A. Barnett

Appl. Phys. Lett. 57, 2654 (1990); http://dx.doi.org/10.1063/1.104189 (3 pages) | Cited 66 times

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Single‐crystal TiN/V0.6Nb0.4N superlattice films were deposited on MgO(100) substrates using ultrahigh vacuum reactive sputtering from two magnetron sources with a computer‐controlled shutter. X‐ray diffractometer measurements showed first‐ and second‐order superlattice peaks while electron diffraction showed up to seventh‐order superlattice reflections. Direct observations using cross‐sectional transmission electron microscopy showed that the superlattices had flat, abrupt interfaces, but contained threading dislocations. Microhardness values for the superlattices ranged from to 3100 to 4100 kg/mm2, depending on the superlattice period (λ), compared with 1500 for an alloy with equal average composition. The hardness values for these lattice‐matched superlattices agreed with those previously reported for TiN/VN superlattices with a lattice mismatch of 2.4%, although the hardness peak was less pronounced. The present results indicate that coherency strains do not play the major role in enhancing the hardness of these nitride superlattices.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Characterization of diamond‐like films using electron probe microanalysis

J. C. Pivin, M. Spirckel, M. Allouard, and G. Rautureau

Appl. Phys. Lett. 57, 2657 (1990); http://dx.doi.org/10.1063/1.103794 (3 pages) | Cited 8 times

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Amorphous carbon films were deposited onto Si, SiC, and Ti alloys by implanting low‐energy C+ ions, laser ablation, or double ion beam sputtering (DIBS). Their soft x‐ray emission spectra were recorded by means of an electron probe microanalyzer (EPMA). Comparison of the energy position of peaks with characteristic spectra of various standards has shown that the short range order in films formed by 2 keV C+ implantation or laser ablation was about the same as in diamond. On the contrary, DIBS films and implantation films formed at lower energies were rather graphite‐like. The former were constituted of true diamond‐like carbon, since other analysis indicated that they were free of H and O contamination and that a carbide of the substrate species did not grow. It is concluded that EPMA is a valuable method for characterizing the bonding in carbon films.
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73.61.Ng Insulators
71.23.-k Electronic structure of disordered solids
78.70.En X-ray emission spectra and fluorescence
68.55.Nq Composition and phase identification

Observation of solid‐state amorphization in the immiscible system Cu‐Ta

Kenji Sakurai, Yuh Yamada, Masahisa Ito, Chung Hyo Lee, Toshiharu Fukunaga, and Uichiro Mizutani

Appl. Phys. Lett. 57, 2660 (1990); http://dx.doi.org/10.1063/1.104190 (3 pages) | Cited 15 times

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The Cu‐Ta system has been known to be immiscible and never amorphized by the conventional rapid quenching technique. The possibility of solid‐state amorphization of Cu30 Ta70 during mechanical alloying (MA) was examined by the local structure observation using extended x‐ray absorption fine structure (EXAFS). It was found that long‐range order around Cu and Ta atoms gradually disappeared as a result of MA. These results are also important to an understanding of the reaction mechanism of amorphization during MA.
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61.66.Dk Alloys
61.05.cf X-ray scattering (including small-angle scattering)
61.05.cj X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.
81.05.Bx Metals, semimetals, and alloys
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Maximum density of Pb centers at the (111) Si/SiO2 interface after vacuum anneal

A. Stesmans and G. Van Gorp

Appl. Phys. Lett. 57, 2663 (1990); http://dx.doi.org/10.1063/1.104191 (3 pages) | Cited 19 times

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The density of interfacial [111]Pb centers, i.e., 0Si≡Si3 defects with unpaired bond along [111], has been accurately determined by K‐band electron spin resonance at 4.3 K on (111)Si/SiO2 structures using various oxidation conditions. Reversible defect depassivation (dehydrogenation) has been monitored by post‐oxidation vacuum annealing in the temperature range 752–835 °C. It was found that the density of both ESR active and passivated Pb defects is (11.4±0.6)×1012 cm−2 on all (111)Si/SiO2 interfaces prepared by oxidation in dry O2 at 920–1000 °C. This number appears to be a natural constant predominantly set by the oxidation temperature; variations in oxidation oxygen pressure (1.5×10−5–840 Torr) and time have little influence. The Pb’s are found to account for all the fast interface states.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.Hb Impurity and defect levels; energy states of adsorbed species
76.30.Mi Color centers and other defects

Optical reflectivity and amorphization of GaAs during decompression from megabar pressures

Yogesh K. Vohra, Hui Xia, and Arthur L. Ruoff

Appl. Phys. Lett. 57, 2666 (1990); http://dx.doi.org/10.1063/1.103795 (3 pages) | Cited 17 times

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Polycrystalline GaAs was studied in a diamond anvil cell by optical reflection spectroscopy and energy‐dispersive x‐ray diffraction to pressures of 115 GPa (1.15 Mbar). Complete amorphization was observed at ambient conditions after decompression from 115 GPa, and, subsequent compression caused crystallization around 27 GPa to an orthorhombic phase. The results are compared with other group IV and III‐V semiconductor materials and implantation‐amorphized GaAs.
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61.43.Fs Glasses
61.43.-j Disordered solids
61.44.Br Quasicrystals
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
61.66.Bi Elemental solids

Metalorganic chemical vapor deposition growth of undoped GaAs with a low electron concentration on a Si substrate

S. Nozaki, A. T. Wu, J. J. Murray, T. George, T. Egawa, and M. Umeno

Appl. Phys. Lett. 57, 2669 (1990); http://dx.doi.org/10.1063/1.103796 (3 pages) | Cited 10 times

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We have successfully grown an undoped GaAs layer with a low electron concentration on Si by metalorganic chemical vapor desposition (MOCVD). The back and side edges of the Si substrate were covered with a Si3N4/SiO2 stacked layer to suppress Si incorporation into GaAs by the gas phase transport mechanism during the MOCVD growth. A 3‐μm‐thick undoped GaAs layer with an electron concentration of 3×1014 cm−3, as low as the electron concentration of a GaAs layer grown on a GaAs substrate, was grown on the Si substrate even at 750 °C.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Kk Vapor phase epitaxy; growth from vapor phase
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Gain switching of an AlGaAs/GaAs laser with an asymmetric double quantum well

Yoshinori Nomura, Hiroshi Sugimoto, Shigemitu Maruno, Yoshitaka Morishita, Osamu Wada, and Tetsuo Ogama

Appl. Phys. Lett. 57, 2672 (1990); http://dx.doi.org/10.1063/1.103797 (3 pages) | Cited 1 time

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We demonstrate a new gain switching mechanism in semiconductor lasers with an asymmetric double quantum well. The idea is to utilize overlap integral enhancement for coupled sublevels in the double quantum well at an applied forward voltage. Optical pulses of less than 10 ps full width at half maximum have been readily obtained with a moderate electrical excitation pulse height, 16.3 V (at a 50 Ω load) and bias current of 6% of the threshold. The advantages of the structure over a single quantum well for generating optical short pulses are shown experimentally.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Demonstration of resonant transmission in InAs/GaSb/InAs interband tunneling devices

E. T. Yu, D. A. Collins, D. Z.‐Y. Ting, D. H. Chow, and T. C. McGill

Appl. Phys. Lett. 57, 2675 (1990); http://dx.doi.org/10.1063/1.104109 (3 pages) | Cited 22 times

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We have performed a theoretical and experimental analysis of current transport in InAs/GaSb/InAs interband tunneling devices as a function of GaSb layer width. Our results demonstrate that current transport in these devices occurs not through simple ohmic conduction, as had been previously proposed, but via light‐hole‐like resonances in the GaSb valence band formed due to the imperfect matching of InAs conduction‐band and GaSb valence‐band wave functions at the InAs/GaSb interfaces. These resonances produce a strong dependence of the current‐voltage characteristics on GaSb layer width that is both predicted theoretically and observed experimentally. Our results also suggest that coupling between InAs conduction‐band and GaSb heavy‐hole valence‐band states is relatively unimportant in these devices. In addition, we have been able to obtain peak current densities of ∼9×104 A/cm2, significantly higher than any previously reported current densities for this structure.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Photoluminescence study of sulfide layers on p‐type InP

R. Leonelli, C. S. Sundararaman, and J. F. Currie

Appl. Phys. Lett. 57, 2678 (1990); http://dx.doi.org/10.1063/1.103798 (2 pages) | Cited 9 times

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The emission spectra from sulfurized p‐InP annealed at temperatures below 300 °C are compared with those from untreated samples annealed under the same conditions. The unsulfurized samples show a VP related emission band at 1.14 eV whose intensity increases linearly with annealing temperature. The sulfurized samples exhibit an emission band at 0.94 eV attributed to a SP deep level. Both bands disappear when a layer of 20 Å is chemically removed. This shows that both VP and SP formation is limited to a few atomic surface layers.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
81.40.Tv Optical and dielectric properties related to treatment conditions
81.65.-b Surface treatments

Composition of phosphorus‐nitride film deposited on InP surfaces by a photochemical vapor deposition technique and electrical properties of the interface

Yoon‐Ha Jeong, Jae‐Hak Lee, Young‐Ho Bae, and Young‐Tae Hong

Appl. Phys. Lett. 57, 2680 (1990); http://dx.doi.org/10.1063/1.104192 (3 pages) | Cited 7 times

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Low‐temperature (100–200 °C) growth of phosphorus nitride (P3N5) on InP surfaces has been successfully developed using a mixture of PCl3 and NH3 gases by a direct photochemical vapor deposition. The films have a resistivity of 1×1014 Ω cm and a breakdown voltage of 1×107 V/cm. The minimum density of interface trap states for the aluminum (Al)‐P3N5‐InP metal‐insulator‐semiconductor structure after the in situ processes is about 3.6×1010 cm−2 eV−1 near the midgap of InP. Auger electron spectroscopy and x‐ray photoelectron spectroscopy measurements were used to evaluate the film and the film/InP interface.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators
68.55.Nq Composition and phase identification
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Growth kinetics simulation of the Al‐Ga self‐organization on (100) GaAs vicinal surfaces

Yan‐Ten Lu, Pierre Petroff, and Horia Metiu

Appl. Phys. Lett. 57, 2683 (1990); http://dx.doi.org/10.1063/1.103799 (3 pages) | Cited 16 times

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We present results of a stochastic kinetic simulation of the segregation of Al and Ga during the mobility‐enhanced epitaxial deposition on the As face of a stepped (100) GaAs surface.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.Fx Diffusion; interface formation
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
66.30.J- Diffusion of impurities

Trench Pd/Si metal‐oxide‐semiconductor Schottky barrier diode for a high sensitivity hydrogen gas sensor

Y. K. Fang, S. B. Hwang, C. Y. Lin, and C. C. Lee

Appl. Phys. Lett. 57, 2686 (1990); http://dx.doi.org/10.1063/1.103800 (3 pages) | Cited 33 times

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The structure and hydrogen gas sensing properties of a trench Pd‐thin oxide‐Si Schottky diode are studied and compared with a planar one. The trench diode possesses additional vertical surface area and a large number of interface traps induced by injected hydrogen ions. The additional vertical surface area enlarges the entrance of H2 molecules, and the generated middle traps enhance the carrier tunneling. Also, the generated shallow traps can catch the carrier to form a thin surface charge layer and lower the barrier. The sensitivity of the trench diode is thus higher than that of the planar diode under room‐temperature operation.
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85.30.Hi Surface barrier, boundary, and point contact devices
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Creation of p‐n junction in Hg0.3Cd0.7Te

J. F. Barbot, J. Kronewitz, and W. Schröter

Appl. Phys. Lett. 57, 2689 (1990); http://dx.doi.org/10.1063/1.103801 (3 pages) | Cited 11 times

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We have used local plastic deformation and electron irradiation to create p‐n junctions in Hg0.3Cd0.7Te. The electron induced current mode of scanning electron microscopy was used to detect the local conversion from p type to n type. Control experiments with CdTe and independent results show that the migration of interstitial mercury and its reaction with an acceptor must be responsible for the observed conversion.
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66.30.Lw Diffusion of other defects
72.80.Ey III-V and II-VI semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Raman scattering from quantum dots of Ge embedded in SiO2 thin films

Minoru Fujii, Shinji Hayashi, and Keiichi Yamamoto

Appl. Phys. Lett. 57, 2692 (1990); http://dx.doi.org/10.1063/1.103802 (3 pages) | Cited 62 times

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Raman measurements were carried out on Ge quantum dots from 6.1 to 15 nm in size embedded in SiO2 thin films. The samples were prepared by rf co‐sputtering and post‐ annealing. In contrast to the amorphous‐like broad spectra previously obtained for gas‐ evaporated Ge microcrystals of comparable sizes, relatively sharp lines around 300 cm−1 were observed, because the present dots satisfy the fixed boundary condition. The increase in the linewidth observed with decreasing the size is in good agreement with the results of the calculation based on the phonon confinement model. However, the downward shift of the line predicted from the calculation was not observed presumably due to the compressive stress exerted on the dots.
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78.30.Hv Other nonmetallic inorganics
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
68.35.Ja Surface and interface dynamics and vibrations
81.05.Bx Metals, semimetals, and alloys

One‐dimensional lateral‐field‐effect transistor with trench gate‐channel insulation

J. Nieder, A. D. Wieck, P. Grambow, H. Lage, D. Heitmann, K. v. Klitzing, and K. Ploog

Appl. Phys. Lett. 57, 2695 (1990); http://dx.doi.org/10.1063/1.103803 (3 pages) | Cited 45 times

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A novel unipolar transistor device has been realized starting from two‐dimensional electron systems (2DES) in modulation‐doped AlGaAs/GaAs heterostructures. A 600‐nm‐wide 1D channel is insulated laterally from 2DES regimes by 700‐nm‐wide deep mesa etched trenches. The conductivity in the quasi‐one‐dimensional channel can be tuned via the in‐plane lateral field effect of the adjacent 2DES gates where the vacuum (or air) in the etched trenches serves as the dielectric. Room‐temperature operation is demonstrated yielding a 17 μS transconductance corresponding to 170 mS/mm 2D transconductance.<hedend>
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85.30.Tv Field effect devices
85.30.Hi Surface barrier, boundary, and point contact devices
81.65.-b Surface treatments
73.61.Ey III-V semiconductors

Determination of the GaInP/AlGaInP band offset

C. T. H. F. Liedenbaum, A. Valster, A. L. G. J. Severens, and G. W. ’t Hooft

Appl. Phys. Lett. 57, 2698 (1990); http://dx.doi.org/10.1063/1.104193 (3 pages) | Cited 57 times

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Low‐temperature photoluminescence excitation spectra of disordered Ga0.5In0.5P/Al0.3Ga0.2In0.5P quantum wells lattice matched to (311)B GaAs substrates have been measured for the first time. Transition energies calculated with a math⋅math approach agree with experiment within 3 MeV, over the entire range of quantum well thicknesses (Lz=11–109 Å). A conduction‐band discontinuity of 0.65±0.05 is derived.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
78.55.Cr III-V semiconductors
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