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24 Dec 1990

Volume 57, Issue 26, pp. 2745-2861

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Polarization mode selective channel waveguides in an InGaAs/InP disordered superlattice

Yasuhiro Suzuki, Hidetoshi Iwamura, Takeo Miyazawa, and Osamu Mikami

Appl. Phys. Lett. 57, 2745 (1990); http://dx.doi.org/10.1063/1.103774 (3 pages) | Cited 8 times

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Optical channel waveguides which can selectively confine transverse electric and transverse magnetic modes were successfully fabricated in an InGaAs/InP superlattice disordered by Si3N4 cap annealing. The extinction ratio of mode selectivity was found to be 13 dB in both single‐mode channel waveguides at the 1.52 μm wavelength. The induced variation in refractive indices by disordering is estimated to be 1–2×10−3.
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42.81.Dp Propagation, scattering, and losses; solitons
42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Simple method for creating pulse shortening in x‐ray lasers

S. J. Rose, A. M. Rogoyski, and N. Tragin

Appl. Phys. Lett. 57, 2748 (1990); http://dx.doi.org/10.1063/1.103775 (2 pages)

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A simple method for creating pulse shortening in recombination x‐ray lasers is proposed in which the motion of the gain medium is utilized in a novel target geometry.
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42.55.Vc X- and γ-ray lasers
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Vertical monolithic integration of a GaAs/AlGaAs V‐channeled substrate inner stripe laser diode and a heterojunction bipolar transistor

Yu‐Heng Jan and Si‐Chen Lee

Appl. Phys. Lett. 57, 2750 (1990); http://dx.doi.org/10.1063/1.103776 (3 pages) | Cited 1 time

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A GaAs/AlGaAs V‐channeled substrate inner stripe laser diode has been successfully integrated with a GaAs/AlGaAs heterojunction bipolar transistor in a vertical configuration for the first time. An ‘‘effective’’ threshold current (base current) as low as 8 mA was obtained. The maximum power output was beyond 5 mW per facet and the single longitudinal mode operation was achieved.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Ey III-V semiconductors
42.82.-m Integrated optics
85.60.-q Optoelectronic devices

Coherent linear and two‐dimensional arrays of multiple quantum well grating‐surface‐emitting diode lasers emitting at 1.5 μm

S. L. Palfrey, R. E. Enstrom, E. A. VanGieson, J. M. Hammer, Ramon U. Martinelli, N. W. Carlson, G. A. Evans, J. T. Andrews, J. Appert, R. Stolzenberger, and A. Triano

Appl. Phys. Lett. 57, 2753 (1990); http://dx.doi.org/10.1063/1.103777 (3 pages) | Cited 2 times

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We have demonstrated linear and two‐dimensional arrays of grating‐surface‐emitting lasers operating at 1.5 μm. The gain sections are 400‐μm‐long InGaAs/InGaAsP multiple quantum well ridge‐guide diode lasers, connected by waveguide output sections of 300‐μm‐long distributed‐Bragg‐reflection gratings. These arrays exhibit coherent, mutual‐injection‐coupled laser action. The far‐field patterns are characteristic of low‐order array modes that are nearly diffraction limited. Predominantly single‐wavelength‐mode operation is observed.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Laser action in the blue‐green from optically pumped (Zn,Cd)Se/ZnSe single quantum well structures

J. Ding, H. Jeon, A. V. Nurmikko, H. Luo, N. Samarth, and J. K. Furdyna

Appl. Phys. Lett. 57, 2756 (1990); http://dx.doi.org/10.1063/1.103778 (3 pages) | Cited 25 times

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We have obtained optically pumped laser action in the form (Zn,Cd)Se/ZnSe single quantum well structures prepared by molecular beam epitaxy. Near‐room‐temperature lasing under pulsed excitation has been achieved and high repetition quasi‐continuous mode operation at temperatures so far up to 120 K. Rapid gain switching has generated pulses of approximate 20 ps in duration.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Picosecond on‐off switching using a pair of picosecond‐on/nanosecond‐off GaAs étalons

C. W. Lowry, H. M. Gibbs, R. M. Pon, and G. Khitrova

Appl. Phys. Lett. 57, 2759 (1990); http://dx.doi.org/10.1063/1.104108 (3 pages) | Cited 6 times

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An architectural approach that decreases the pair on‐off time to much less than the individual device recovery time is presented. Two GaAs Fabry–Perot étalons, each having a 30 ns recovery time, were connected in series, defining a logic function with a fast turn‐on time and a fast turn‐off time. Either of two data pulses, spaced 40 ps apart, was extracted by appropriately delaying a pair of switching pulses spaced 40 ps apart. This approach has application to data generation, multiplexing and demultiplexing, self‐routing, and bit permutation.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
07.60.Ly Interferometers

High‐power operation of buried‐heterostructure strained‐layer InGaAs/GaAs single quantum well lasers

T. R. Chen, L. E. Eng, Y. H. Zhuang, Y. J. Xu, H. Zaren, and A. Yariv

Appl. Phys. Lett. 57, 2762 (1990); http://dx.doi.org/10.1063/1.103779 (2 pages) | Cited 9 times

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Very high power levels (330 mW) were obtained from single waveguide, single quantum well InGaAs/GaAs lasers. The lasers are shown to possess superior current threshold, temperature and optical damage characteristics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

InGaAs‐GaAs‐AlGaAs gain‐guided arrays operating in the in‐phase fundamental array mode

K. J. Beernink, J. J. Alwan, and J. J. Coleman

Appl. Phys. Lett. 57, 2764 (1990); http://dx.doi.org/10.1063/1.103780 (3 pages) | Cited 2 times

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We compare the operation of single‐stripe gain‐guided InGaAs‐GaAs‐AlGaAs strained‐layer quantum well heterostructure lasers emitting at wavelengths ≳1.0 μm to five‐element gain‐guided arrays with 8 μm stripe width and center‐to‐center spacings S from 14 to 30 μm. Arrays with large interelement spacings exhibit a twin‐lobed far‐field pattern corresponding to the highest order supermode with 180° phase shift between adjacent elements. Devices with smaller interelement spacing exhibit a single lobe in the far field suggestive of in‐phase operation. Pulsed L‐I characteristics show kink‐free operation of arrays with S=15 μm to 730 mW per uncoated facet at 1.8 A.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.79.Gn Optical waveguides and couplers

Extended Jones matrix representation for the twisted nematic liquid‐crystal display at oblique incidence

A. Lien

Appl. Phys. Lett. 57, 2767 (1990); http://dx.doi.org/10.1063/1.103781 (3 pages) | Cited 179 times

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A simple and accurate extended Jones matrix representation for the twisted nematic liquid‐crystal display at the oblique incidence was obtained for the first time. The results obtained by this extended Jones matrix representation are quite close to those obtained by the faster 4×4 matrix method with spectrum averaging to account for the nonzero bandwidth of the incident light. However, the computation time for the extended Jones matrix method is less than half that of the faster 4×4 matrix method without spectrum averaging. Furthermore, at normal incidence, this extended Jones matrix representation reduces to the ordinary Jones matrix representation.
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42.25.Bs Wave propagation, transmission and absorption
61.30.-v Liquid crystals
42.25.Dd Wave propagation in random media

Far‐infrared cavity dump coupling of the UC Santa Barbara free‐electron laser

J. P. Kaminski, J. S. Spector, C. L. Felix, D. P. Enyeart, D. T. White, and G. Ramian

Appl. Phys. Lett. 57, 2770 (1990); http://dx.doi.org/10.1063/1.103782 (3 pages) | Cited 6 times

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A Nd:YAG laser‐induced semiconductor switch for far‐infrared (FIR) radiation was mounted inside a free‐electron laser (FEL) wiggler cavity to act as an intracavity output coupler. By timing the FEL to the Q‐switched laser, the FIR switch could be turned on during the intracavity laser saturation period. In addition to demonstrating the generation of short, high peak power pulses, the cavity dump coupler (CDC) was used for the first time to image the intracavity mode structure of a FEL and to perform steady‐state saturation spectroscopy studies in the FIR.
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42.60.Fc Modulation, tuning, and mode locking
41.60.Cr Free-electron lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques

On the linewidth enhancement factor in semiconductor lasers

L. Olofsson and T. G. Brown

Appl. Phys. Lett. 57, 2773 (1990); http://dx.doi.org/10.1063/1.103783 (3 pages) | Cited 4 times

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The linewidth enhancement factor α is known to have an important impact on semiconductor laser frequency stability. We determine under what general circumstances the value of α for a semiconductor laser may depend upon the longitudinal laser structure. A longitudinal modulation of the modal refractive index is shown not to have any influence on α, while our results indicate that a longitudinal modulation of the modal gain such as would be used in a gain‐coupled laser will in general change the linewidth enhancement factor.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.60.Fc Modulation, tuning, and mode locking

Photorefractive gain enhancement in InP:Fe using band‐edge resonance and temperature stabilization

James E. Millerd, Steffen D. Koehler, Elsa M. Garmire, Afshin Partovi, Alastair M. Glass, and Marvin B. Klein

Appl. Phys. Lett. 57, 2776 (1990); http://dx.doi.org/10.1063/1.103784 (3 pages) | Cited 16 times

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We report photorefractive two beam coupling gain coefficients as high as Γ=19 cm−1 and net gains of Γ‐α=14 cm−1 in InP:Fe at around 970 nm. This enhancement was achieved by combining band‐edge resonant nonlinearities with a second resonant enhancement derived from the bipolar transport in this material. Measurements of gain as a function of pump intensity, applied field, grating spacing, wavelength, and temperature are presented. No moving gratings were required.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Hp Optical processors, correlators, and modulators
78.20.Jq Electro-optical effects

Si(100)‐(2×1)boron reconstruction: Self‐limiting monolayer doping

R. L. Headrick, B. E. Weir, A. F. J. Levi, D. J. Eaglesham, and L. C. Feldman

Appl. Phys. Lett. 57, 2779 (1990); http://dx.doi.org/10.1063/1.103785 (3 pages) | Cited 30 times

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A (2×1) surface reconstruction distinct from the clean Si(100)‐(2×1) surface is formed by depositing boron onto silicon in ultrahigh vacuum. Overgrowth of epitaxial silicon at low temperature preserves a (2×1) superstructure of substitutional boron. Hall‐effect measurements at 4.2 K show complete electrical activity for boron coverages of 1/2 monolayer, but additional boron above 1/2 monolayer is not electrically active.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.Fx Diffusion; interface formation
68.55.-a Thin film structure and morphology

Quantitative characterization of physical processes during nanometer surface modification

S. E. McBride and G. C. Wetsel

Appl. Phys. Lett. 57, 2782 (1990); http://dx.doi.org/10.1063/1.103786 (3 pages) | Cited 7 times

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A scanning tunneling microscope developed for microscopy, spectroscopy, and lithography has been used for modification of metallic surfaces exposed to the atmosphere. We report here the first quantitative characterization of a submicrometer area of a metallic sample before and after pulsing the tip‐sample voltage using both tunneling spectroscopy determination of the apparent mean barrier potential (ϕ) and imaging of the area in constant tunneling current mode. The before and after images show that the form of the created features ranges from craters to mounds. The current wave form recorded during a surface modification is indicative of the form of the feature. Diminution of the contamination layer often associated with surfaces exposed to the atmosphere is inferred from the values of ϕ before and after modification. Analysis of the results indicates that the observed features were caused by high electric fields and not by high temperatures.
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73.40.Gk Tunneling
73.40.Rw Metal-insulator-metal structures
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
07.78.+s Electron, positron, and ion microscopes; electron diffractometers

Etch rate modeling for ion‐irradiated nitrocellulose

L. Merhari, C. Belorgeot, and J. P. Moliton

Appl. Phys. Lett. 57, 2785 (1990); http://dx.doi.org/10.1063/1.103787 (3 pages) | Cited 1 time

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The self‐developing mechanism of nitrocellulose when used as an ion beam resist is described by a model predicting the evolution of the etch rate versus irradiation time. Fundamentals of the model based on ion energy deposition dependent ablative development along with related mathematical derivations are given and briefly discussed. Comparison between theoretical results and experimental data available for protons at 20 keV and Ne+, Ar+, Kr+ ions at 150 keV is made and shows a good agreement. This result clearly does not conflict with our assumption that the nitrocellulose etch rate is dependent on the total ion deposited energy no matter how the energy is deposited.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments
82.50.Kx Processes caused by X-rays or γ-rays

In situ infrared evidence for the electrochemical incorporation of hydrogen into Si and Ge

K. C. Mandal, F. Ozanam, and J.‐N. Chazalviel

Appl. Phys. Lett. 57, 2788 (1990); http://dx.doi.org/10.1063/1.103788 (3 pages) | Cited 17 times

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The electrochemical incorporation of hydrogen into n‐Si and n‐Ge has been studied by Fourier‐transform electrochemically modulated infrared spectroscopy. Fresh (111) silicon (resp., germanium) surfaces exhibit a vibrational band at 2080 (resp., 1960) cm−1 corresponding to a surface Si—H (resp., Ge—H) bond perpendicular to the surface. Prolonged cathodic treatment results in a new band at 2000 (resp., 1900) cm−1. The position and polarization dependence of this band indicate that it is associated with hydrogen inside the semiconductor lattice. These observations directly show for the first time that cathodically hydrogenated samples contain a thin, disordered, and highly hydrogenated layer, which is probably responsible for the improvement of the hydrogen evolution kinetics observed on these electrodes.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
81.65.-b Surface treatments
68.43.Pq Adsorbate vibrations
73.40.Mr Semiconductor-electrolyte contacts

Hydrogen neutralization of acceptors in highly doped GaInAs:Zn

A. Jalil, B. Theys, J. Chevallier, A. M. Huber, C. Grattepain, P. Hirtz, and B. Pajot

Appl. Phys. Lett. 57, 2791 (1990); http://dx.doi.org/10.1063/1.103789 (3 pages) | Cited 11 times

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We have investigated the behavior of atomic hydrogen (or deuterium) introduced by plasma in highly doped GaInAs:Zn epitaxial layers. Different experimental techniques have been used: secondary‐ion mass spectrometry (SIMS) profiling, electronic transport measurements, and infrared absorption spectroscopy. After hydrogenation the concentration of free holes is drastically reduced. SIMS profiles follow erfc functions. This corresponds to weak hydrogen‐dopant interactions. This weakness is confirmed by the annealing experiments from which a low dissociation energy can be estimated.
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71.55.Eq III-V semiconductors
72.80.Ey III-V and II-VI semiconductors
72.20.Dp General theory, scattering mechanisms
73.61.Ey III-V semiconductors

X‐ray photoelectron spectroscopy study of the interfacial reactivity of Si with the oxidized GaAs (100) surface

M. T. Cuberes and J. L. Sacedón

Appl. Phys. Lett. 57, 2794 (1990); http://dx.doi.org/10.1063/1.104198 (3 pages) | Cited 4 times

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The chemistry of the interfacial reactions of Si with GaAs oxides has been investigated by x‐ray photoelectron spectroscopy (XPS). We present evidence of a room‐temperature chemical reaction between Si and the oxides of GaAs that leads to complete reduction of the As and Ga oxides. Si deposition on oxidized GaAs resulted in the formation of a Si/SiO2/GaAs structure as revealed by the XPS measurements. The results of the evolution of the Ga(LMM), As(2p), Ga(2p), and Si(2p) core level spectra during the deposition of Si are comparatively studied and discussed.
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68.35.Fx Diffusion; interface formation
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.65.-b Surface treatments

Effects of different processes with hydrogen on the photoluminescence of GaAlAs:Si grown by molecular beam epitaxy

E. Grilli, M. Guzzi, R. Zamboni, A. Bosacchi, S. Franchi, L. Vanzetti, P. Allegri, and L. Pavesi

Appl. Phys. Lett. 57, 2797 (1990); http://dx.doi.org/10.1063/1.103790 (3 pages) | Cited 3 times

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We present a study on low‐temperature photoluminescence (PL) of Si‐doped Ga1−xAlxAs (n ∼ 1×1017 cm−3, 0.2≤x≤ 0.5) grown by molecular beam epitaxy (MBE) either in the presence and in the absence of a hydrogen backpressure and/or post‐growth hydrogenated by exposure to a hydrogen plasma; we show that GaAlAs grown with hydrogen has a PL efficiency higher than that of material grown without hydrogen by a factor of up to 20; even more interestingly, the relative enhancement of transitions related to excitons and to shallow donors and acceptors is so large that the two kinds of PL spectra are qualitatively different. On the contrary, independently on whether material grown without hydrogen is post‐growth hydrogenated, the spectral features of PL spectra are dominated by transitions involving relatively deep donors and/or acceptors. Our results suggest that the two treatments with hydrogen act on deep levels of different origin.
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73.61.Ey III-V semiconductors
71.55.Eq III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Optical absorption and carrier‐induced bleaching effect in quantum wire and quantum box structures

Hiroyuki Sakaki, Keishi Kato, and Hisao Yoshimura

Appl. Phys. Lett. 57, 2800 (1990); http://dx.doi.org/10.1063/1.103791 (3 pages) | Cited 24 times

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The optical absorption spectra of quantum wires and boxes are studied theoretically to evaluate the carrier‐induced bleaching effect. It is found that the absorption coefficients of these highly confined systems (HCSs) and their changes with the introduction of carriers can be far greater than those of less‐confined systems (LCSs) such as quantum wells (films) and bulk semiconductors. In addition, the carrier‐induced bleaching effect of HCS is found to remain very high at room temperature while that of LCS is substantially weakened by the thermal distribution of carriers.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
78.20.Jq Electro-optical effects
73.61.-r Electrical properties of specific thin films

Asymmetric distribution of microtwins in a GaAs/Si heterostructure grown by molecular beam epitaxy

Q. H. Xie, K. K. Fung, A. J. Ding, L. H. Cai, Y. Huang, and J. M. Zhou

Appl. Phys. Lett. 57, 2803 (1990); http://dx.doi.org/10.1063/1.103792 (3 pages) | Cited 3 times

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The distribution of microtwins in GaAs epilayer grown on Si (001) substrates tilted towards the [111] direction by molecular beam epitaxy has been studied by transmission electron microscopy. An asymmetric distribution of microtwins attributed to substrate misorientation and two‐dimensional (2D) growth mode has been found. Orthogonal [110] and [110] cross sections are identified by the angle of tilt in large‐angle convergent beam electron diffraction Tanaka patterns [J. Electron. Microsc. 29, 408 (1980)] taken across the GaAs/Si interface. It is found that (111) microtwins are preferentially grown in GaAs epilayers on a tilted Si (001) substrate where the growth mode is 2D, while symmetrical (111) and (111) twins are observed when there is a reversal of twin distribution and the growth mode is 3D.
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61.72.Mm Grain and twin boundaries
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Extremely thin and defect‐free Si‐on‐insulator fabrication by tunnel epitaxy

Atsushi Ogura and Yuki Fujimoto

Appl. Phys. Lett. 57, 2806 (1990); http://dx.doi.org/10.1063/1.103770 (2 pages) | Cited 2 times

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A novel technique for extremely thin and defect‐free Si‐on‐insulator (SOI) fabrication, called tunnel epitaxy, is demonstrated. A lateral/vertical growth ratio of 20 is achieved with precisely controlled SOI film thickness, where the minimum thickness for the fabricated SOI is 0.05 μm. No defect was observed in the fabricated SOI with 〈001〉 lateral growth direction. The growth front is a flat (001) plane. The lateral growth length is limited to 1–2 μm by tunnel clogging, due to poly‐Si grain growth. The tunnel epitaxy, however, has a potential for larger area SOI fabrication, because the fabricated tunnel length is 10 μm.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
68.35.Fx Diffusion; interface formation
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Composition and growth kinetics of ultrathin SiO2 films formed by oxidizing Si substrates in N2O

W. Ting, H. Hwang, J. Lee, and D. L. Kwong

Appl. Phys. Lett. 57, 2808 (1990); http://dx.doi.org/10.1063/1.104199 (3 pages) | Cited 41 times

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Chemical composition and growth kinetics of ultrathin SiO2 films formed by rapid thermal oxidizing Si substrates in N2O have been studied. Both Auger electron spectroscopy (AES) and x‐ray photoelectron spectroscopy (XPS) revealed nitrogen pile‐up at the SiO2/Si interface. Nitrogen concentration at the oxide surface and throughout the bulk was found to be low, similar to reoxidized/nitrided oxides. The nitrogen 1s electron binding energy determined by XPS in the oxide also indicated that these nitrogen atoms were bonded to Si. Electrical characterization showed that N2O oxides exhibited less interface state generation under hot‐electron stressing as compared with the control oxide. Growth kinetics study showed that after an initial stage of fast growth, the oxidation rate was reduced significantly due to the formation of a nitrogen‐rich layer at the Si/SiO2 interface which blocked oxidant diffusion to the interface.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Control of misoriented grains and pinholes in CoSi2 grown on Si(001)

J. R. Jimenez, L. M. Hsiung, K. Rajan, L. J. Schowalter, Shin Hashimoto, R. D. Thompson, and S. S. Iyer

Appl. Phys. Lett. 57, 2811 (1990); http://dx.doi.org/10.1063/1.104201 (3 pages) | Cited 29 times

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Two types of growth conditions have been obtained that consistently overcome the formation of epitaxially misoriented grains in CoSi2/Si(001). One is by co‐deposition of Co and Si at Co‐rich ratios at a substrate temperature of ∼500 °C. This method yields films of low resistivity (16 μΩ cm) and low ion channeling minimum yield (χmin≊2%), but the misfit dislocation densities are of the order of 105 cm−1. The second way uses a template method of growth after an epitaxial Si buffer layer. Films grown this way have somewhat higher resistivities than those grown by the first method, but have lower misfit dislocation densities. The strain relief mechanism in these films also appears to be different from that of co‐deposited films. Pinhole densities in films grown by both methods are below our detection limit of 103 cm−2.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.Fx Diffusion; interface formation
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.55.Nq Composition and phase identification

Enhanced spontaneous emission from GaAs quantum wells in monolithic microcavities

H. Yokoyama, K. Nishi, T. Anan, H. Yamada, S. D. Brorson, and E. P. Ippen

Appl. Phys. Lett. 57, 2814 (1990); http://dx.doi.org/10.1063/1.103771 (3 pages) | Cited 105 times

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Enhanced spontaneous emission has been observed with wavelength‐sized monolithic Fabry–Perot cavities containing GaAs quantum wells. With an on‐resonance cavity structure, the photoluminescence intensity increases in the cavity axis direction, and the spontaneous emission lifetime is experimentally found to decrease.
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78.45.+h Stimulated emission
42.55.Px Semiconductor lasers; laser diodes
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
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