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16 Jul 1990

Volume 57, Issue 3, pp. 209-318

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Effect of photodeposited iron oxide and tin oxide on the consolidation of porous Vycor glass

E. A. Mendoza, D. Sunil, E. Wolkow, H. D. Gafney, M. H. Rafailovich, J. Sokolov, G. G. Long, P. R. Jemian, S. A. Schwartz, and B. J. Wilkens

Appl. Phys. Lett. 57, 209 (1990); http://dx.doi.org/10.1063/1.103740 (3 pages) | Cited 7 times

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Iron oxide and tin oxide have been photodeposited in porous Vycor glass and examined before and after consolidation of the glass. Scanning electron microscopy reveals that the iron oxide particles are larger than the tin oxide particles. However, small‐angle x‐ray scattering and Rutherford backscattering show that the glass consolidates about the iron oxide but not about the tin oxide. Photodeposition of tin oxide, which appears to chemically modify the glass surface and to prevent its consolidation, offers a means of producing highly resolved regions of porosity in the otherwise consolidated glass.
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64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
42.79.Ry Gradient-index (GRIN) devices
42.70.Ce Glasses, quartz
42.82.-m Integrated optics

Measurement of the two‐photon absorption coefficient in a GaAs/AlGaAs quantum well laser

H. Q. Le, H. K. Choi, and C. A. Wang

Appl. Phys. Lett. 57, 212 (1990); http://dx.doi.org/10.1063/1.103741 (3 pages) | Cited 6 times

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The two‐photon absorption (TPA) coefficient has been measured for a single‐mode GaAs/AlGaAs quantum well laser at 0.86 μm, near the lasing wavelength of 0.83 μm. Picosecond laser pulses were employed to resolve the ultrafast TPA from long‐lived carrier‐dependent effects. The TPA coefficient was found to be 31±6 cm GW−1, which corresponds to a value of (5.7±1.2)×10−11 esu for the imaginary part of the third‐order nonlinear susceptibility. At wavelengths near the quantum well exciton, no strong resonance enhancement of the two‐photon transition was observed, and the coefficient appears to be characteristic of the AlGaAs cladding layers.
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42.55.Px Semiconductor lasers; laser diodes
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.55.Ah General laser theory
42.50.Hz Strong-field excitation of optical transitions in quantum systems; multiphoton processes; dynamic Stark shift

Detailed analysis of second‐harmonic generation near 10.6 μm in GaAs/AlGaAs asymmetric quantum wells

P. Boucaud, F. H. Julien, D. D. Yang, J‐M. Lourtioz, E. Rosencher, P. Bois, and J. Nagle

Appl. Phys. Lett. 57, 215 (1990); http://dx.doi.org/10.1063/1.103742 (3 pages) | Cited 56 times

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We report on the observation of resonant intersubband second‐harmonic generation in asymmetric GaAs/AlGaAs quantum wells using a cw or Q‐switched tunable CO2 laser as the pumping source. The dependence of the second‐harmonic intensity with the pump photon wavelength is presented for the first time. A Lorentzian‐like second‐harmonic line shape is found with a maximum at 10.9 μm and a linewidth of 0.4 μm (4.1 meV). These results are in good agreement with theoretical predictions. The expected quadratic dependence of the second‐harmonic conversion efficiency with pump intensity is well verified for intensities up to 150 kW/cm2. The calibrated second‐harmonic power reaches 0.13 μW for a cw pump power of 0.8 W. The value of 7.2×10−7 m/V deduced for the second‐order nonlinear susceptibility is about 1900 times greater than that found in bulk GaAs.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.-e Optical properties of bulk materials and thin films
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Transverse mode characteristics of vertical cavity surface‐emitting lasers

C. J. Chang‐Hasnain, M. Orenstein, A. Von Lehmen, L. T. Florez, J. P. Harbison, and N. G. Stoffel

Appl. Phys. Lett. 57, 218 (1990); http://dx.doi.org/10.1063/1.103743 (3 pages) | Cited 66 times

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Transverse mode characteristics of vertical cavity surface‐emitting (VC‐SE) lasers are described. The mode structure is investigated as a function of the transverse dimension for proton‐implanted gain‐guided VC‐SE lasers. A comparison is made to an air‐post index‐guided structure. The lasing modes and the evolution of the modes with increasing drive current for the VC‐SE lasers are observed to be highly analogous to those of the edge‐emitting lasers. Broad‐area gain‐guided lasers lase in the fundamental TEM00 mode near threshold. At higher currents, high‐order modes are successively excited. A 5 μm square proton‐implanted gain‐guided VC‐SE laser emits a single mode. On the other hand, an air‐post index‐guided SE laser, due to the large index difference between the laser and the cladding, emits multiple transverse modes. Moreover, we show that the gain‐guided VC‐SE lasers exhibit better device characteristics than the air‐post index‐guided lasers.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Second‐harmonic generation of a new chalcone‐type crystal

G. J. Zhang, T. Kinoshita, K. Sasaki, Y. Goto, and M. Nakayama

Appl. Phys. Lett. 57, 221 (1990); http://dx.doi.org/10.1063/1.103744 (3 pages) | Cited 8 times

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A new type of chalcone crystal was prepared. Anisotropic indices with wavelength dispersion were measured by the Brewster angle method. The two largest second‐harmonic generation (SHG) tensor components were determined by the wedge method and compared with d11 of 2‐methyl‐4‐nitroaniline. Calculated collinear and noncollinear phase‐matched SHG patterns reasonably fit the observed photographs.
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42.70.-a Optical materials
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

High power output 1.48–1.51 μm continuously graded index separate confinement strained quantum well lasers

T. Tanbun‐Ek, R. A. Logan, N. A. Olsson, H. Temkin, A. M. Sergent, and K. W. Wecht

Appl. Phys. Lett. 57, 224 (1990); http://dx.doi.org/10.1063/1.103722 (3 pages) | Cited 14 times

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A record high power output strained‐layer InGaAs/InP quantum well laser emitting at 1.48 to 1.51 μm is demonstrated. Maximum cw output as high as 206 mW is obtained from a sample with a cavity length of 890 μm and a facet reflectivity of ∼5 and 85% for the front and the rear facets, respectively. The laser has a threshold of 30 mA and a slope efficiency as high as 0.4 mW/mA.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

GaAs traveling‐wave directional coupler optical modulator/switch

Hideki Hayashi and Kunio Tada

Appl. Phys. Lett. 57, 227 (1990); http://dx.doi.org/10.1063/1.103723 (2 pages) | Cited 4 times

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Device structure, fabrication method, and experimental results of a GaAs/AlGaAs traveling‐wave directional coupler optical modulator/switch operated at 1.06 μm wavelength are described for the first time. An extinction ratio of 13.7 dB has been measured at the switching voltage of 10.4 V, and a 3 dB bandwidth of 9.1 GHz has been demonstrated for a device with a waveguide width of 5.5 μm, waveguide spacing of 3.5 μm, and length of 8 mm.
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42.82.-m Integrated optics
42.79.Hp Optical processors, correlators, and modulators
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

All solid‐state cw passively mode‐locked Ti:sapphire laser using a colored glass filter

Nobuhiko Sarukura, Yuzo Ishida, Tsutomu Yanagawa, and Hidetoshi Nakano

Appl. Phys. Lett. 57, 229 (1990); http://dx.doi.org/10.1063/1.103724 (2 pages) | Cited 27 times

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All solid‐state cw passive mode locking of a Ti:sapphire laser is accomplished using a colored glass filter, instead of an organic dye, as a saturable absorber. The tuning range is remarkably wide (785–855 nm), and 2.7 ps pulses are obtained directly from the cavity.
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42.60.Fc Modulation, tuning, and mode locking
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.70.Ce Glasses, quartz
42.79.Ci Filters, zone plates, and polarizers

Identification of H2(ν″) vibrational excitation processes in a hydrogen discharge

J. R. Hiskes

Appl. Phys. Lett. 57, 231 (1990); http://dx.doi.org/10.1063/1.103725 (3 pages) | Cited 14 times

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The enhancement of the H2(ν″) vibrational distribution observed in the medium‐density hydrogen discharge of Eenshuistra and co‐workers is investigated theoretically as a function of different excitation processes. The observed fivefold enhancement of the ν″ = 5 population with increasing discharge current is reproduced in the model. Principal excitations generating this enhancement are H3+surface recombination and fast‐electron excitation. Atom‐surface recombination may be a principal contributor near the ν″ = 1 portion of the spectrum.
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34.80.Gs Molecular excitation and ionization
52.50.Dg Plasma sources
52.80.Tn Other gas discharges
34.80.-i Electron and positron scattering

Dynamic behavior of two‐laser‐induced bubbles in water

Y. Tomita, A. Shima, and K. Sato

Appl. Phys. Lett. 57, 234 (1990); http://dx.doi.org/10.1063/1.103726 (3 pages) | Cited 18 times

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Two bubbles are simultaneously generated in water by focusing a Q‐switched ruby laser. The dynamic behavior of the induced bubbles is investigated by means of high‐speed photography. Consequently it is found that the bubble–bubble interaction is significantly influenced not only by the relative size of bubbles but also by the mutual distance between them. When two bubbles are axisymmetrically produced one behind the other near a rigid wall, we can observe a very interesting phenomenon, bubble splitting followed by bubble pinching.
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47.55.dp Cavitation and boiling
07.60.-j Optical instruments and equipment
42.55.Mv Dye lasers
43.25.Yw Nonlinear acoustics of bubbly liquids

Infrared diode laser diagnostics of methane plasmas produced in a deposition reactor

P. B. Davies and P. M. Martineau

Appl. Phys. Lett. 57, 237 (1990); http://dx.doi.org/10.1063/1.103727 (3 pages) | Cited 12 times

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Tunable infrared diode laser spectroscopy has been applied to the study of CH4 plasmas generated in a deposition reactor run at 20 kHz. Absolute number densities of CH4, C2H4, and CH3 have been measured as functions of pressure and current. A qualitative explanation of the results is presented.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.38.-r Laser-plasma interactions

Hyperconductivity in chilled beryllium metal

F. M. Mueller, K. A. Johnson, W. J. Medina, H. D. Lewis, D. S. Phillips, M. F. Hundley, J. D. Thompson, Z. Fisk, L. A. Jacobson, C. J. Maggiore, J. F. Smith, E. M. Honig, W. L. Gordon, J. E. Schirber, and R. Kossowsky

Appl. Phys. Lett. 57, 240 (1990); http://dx.doi.org/10.1063/1.103702 (3 pages) | Cited 4 times

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It is shown that in the vicinity of 77 K beryllium has a superior specific conductance compared with the nominally excellent metallic conductors aluminum and copper. It is concluded that beryllium should be considered for some conduction applications, despite its well known toxicity problems.
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72.15.Eb Electrical and thermal conduction in crystalline metals and alloys

Uniaxial lattice expansion of self‐ion‐implanted Si

O. W. Holland, J. D. Budai, and C. W. White

Appl. Phys. Lett. 57, 243 (1990); http://dx.doi.org/10.1063/1.103703 (3 pages) | Cited 8 times

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Lattice strain in self‐ion‐implanted Si is investigated. Under certain irradiation conditions, a unique strain field is shown to form over the range of the ions. This strain field is one‐dimensional and expands the lattice along the direction normal to the surface of the crystal. This phenomena is investigated over a wide range of ion energy (100 keV and 1.25 MeV) and at different implantation temperatures. The presence of uniaxial strain is shown to correlate with a particular damage morphology in Si. This ion‐induced morphology and the irradiation conditions under which it forms are discussed, as well as the mechanism which leads to uniaxial, lattice strain. Both ion channeling and x‐ray diffraction analyses are used to characterize the strain field.
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61.80.Jh Ion radiation effects
61.72.uf Ge and Si
62.20.D- Elasticity
81.40.Jj Elasticity and anelasticity, stress-strain relations

Fractoemission during crack propagation in glass

A. C. Gonzalez and C. G. Pantano

Appl. Phys. Lett. 57, 246 (1990); http://dx.doi.org/10.1063/1.103704 (3 pages) | Cited 8 times

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The phenomenon termed fractoemission was monitored in soda‐lime‐silica glass specimens during slow crack growth. No electron, ion, or photon signals were detected until crack velocities reached approximately 10−2 m/s. These observations suggest that the more intense fractoemissions observed during fast fracture are due to dissipation of the excess energy associated with unstable crack growth, but more significantly that fractoemissions are not fundamental to crack propagation in glass.
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62.20.M- Structural failure of materials
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
79.90.+b Other topics in electron and ion emission by liquids and solids and impact phenomena (restricted to new topics in section 79)

Measurement of the impact ionization rates in Al0.06Ga0.94Sb

H. Kuwatsuka, T. Mikawa, S. Miura, N. Yasuoka, Y. Kito, T. Tanahashi, and O. Wada

Appl. Phys. Lett. 57, 249 (1990); http://dx.doi.org/10.1063/1.103705 (3 pages) | Cited 7 times

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We measured impact ionization rates in AlxGa1−xSb at x=0.06, where the band‐gap energy Eg equals the spin‐orbital splitting energy Δ, in an electric field of 1.5×105–3.2×105 V/cm. By considering exact field profile in the depletion layer for each sample, the ionization rates of AlxGa1−xSb have been determined to be α=2.35×106 exp(−1.30×106/E) and β=9.02×105 exp(−9.03×105/E). Although our data have not shown the resonant enhancement of hole ionization rates described by O. Hildebrand, W. Kuebart, and M. Pilkuhn [Appl. Phys. Lett. 37, 801 (1980)], exact values of impact ionization rates have been established in practical electric fields required for designing AlxGa1−xSb avalanche photodiodes.
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72.20.Ht High-field and nonlinear effects
72.80.Ey III-V and II-VI semiconductors
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Indium doping of n‐type HgCdTe layers grown by organometallic vapor phase epitaxy

S. K. Ghandhi, N. R. Taskar, K. K. Parat, and I. B. Bhat

Appl. Phys. Lett. 57, 252 (1990); http://dx.doi.org/10.1063/1.103706 (3 pages) | Cited 8 times

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n‐type doping of mercury cadmium telluride was achieved using trimethylindium as the dopant source. The layers, grown by the alloy growth technique, were doped to ∼5×1018 cm−3. The donor concentration in these layers was found to exhibit a linear dependence on the dopant partial pressure over the carrier concentration range from 5×1016 to 3×1018 cm−3. Reasonably high electron mobility values were observed in these indium‐doped layers. Typically, layers with a Cd fraction x=0.23, doped to 3.5×1016 cm−3, exhibited a mobility value of 7.5×104 cm2/V s at 40 K. High electron mobility values, measured over the entire doping regime, suggest a high electrical activity of indium in these layers. The optically measured band edge in these indium‐doped layers was observed to shift to higher energy with increasing doping. The band‐edge energy values measured in 1×1017 and 3×1018 cm−3 doped layers correspond to x=0.23 and x=0.3, respectively. This increase can be due to an increase in the Cd fraction, or to a Burstein–Moss shift of the band edge with doping.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.10.Bk Growth from vapor
73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.61.Ga II-VI semiconductors

Improved value for the silicon intrinsic carrier concentration at 300 K

A. B. Sproul, M. A. Green, and J. Zhao

Appl. Phys. Lett. 57, 255 (1990); http://dx.doi.org/10.1063/1.103707 (3 pages) | Cited 5 times

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A recent review suggests that the commonly cited value of 1.45×1010 cm−3 for the silicon intrinsic carrier concentration at 300 K is inconsistent with the best experimental and theoretical results. An alternative value of 1.08×1010 cm−3 was suggested. A new experimental measurement of 1.01×1010 cm−3 is reported with an estimated one standard deviation uncertainty of only 3%. This appears to be the most accurate experimental determination of this parameter at any temperature.
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72.80.Cw Elemental semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Properties and thermal stability of the SiO2/GaAs interface with different surface treatments

A. Paccagnella, A. Callegari, J. Batey, and D. Lacey

Appl. Phys. Lett. 57, 258 (1990); http://dx.doi.org/10.1063/1.104217 (3 pages) | Cited 6 times

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High quality SiO2 films were deposited by plasma‐enhanced chemical vapor deposition on GaAs wafers which received different surface treatments. It was found that metal‐oxide‐semiconductor (MOS) capacitors which received surface nitridation were unstable under high‐temperature anneal (600 °C). These instabilities are interpreted in terms of free As precipitates at the interface. When, instead, a thin Si layer was deposited on the GaAs surface, stable interfaces were obtained at 600 °C. These MOS capacitors appear to show both deep depletion and inversion.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators
84.32.Tt Capacitors
81.40.Gh Other heat and thermomechanical treatments

Energy levels in quantum wires studied by tunneling and magnetotransport experiments

F. Hirler, J. Smoliner, E. Gornik, G. Weimann, and W. Schlapp

Appl. Phys. Lett. 57, 261 (1990); http://dx.doi.org/10.1063/1.103708 (3 pages) | Cited 19 times

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We have studied the one‐dimensional (1D) subband energies in quantum wires fabricated on GaAs‐GaAlAs heterostructures. Magnetoresistance oscillations were used to investigate the influence of an applied gate voltage on the 1D subband energies for various geometrical widths of the fabricated quantum wires. For the first time, we measure directly the 1D subband energies by tunneling spectroscopy. As a result, both the confining potential and the influence of an additional magnetic field are well described by a simple harmonic oscillator model.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Gk Tunneling
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor

Tunneling of photoexcited holes through a double‐barrier resonant tunneling structure observed by time‐resolved photoluminescence

S. Charbonneau, Jeff F. Young, and A. J. SpringThorpe

Appl. Phys. Lett. 57, 264 (1990); http://dx.doi.org/10.1063/1.103709 (3 pages) | Cited 16 times

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The tunneling dynamics of photogenerated holes in a biased GaAs/AlGaAs double‐barrier resonant tunneling structure is studied using time‐resolved photoluminescence. For voltages biasing the structure in the resonant tunneling regime, a single exponential time decay was observed. However, for voltages which bias the structure in the nonresonant tunneling regime, beyond the region of negative differential resistance, the exciton decays with two time constants: one similar to that observed at low voltages and one that is approximately one order of magnitude slower. We attribute the fast time constant to the decay of exciton population originating from holes photoexcited directly in the well. The slower time constant is associated with excitons that are created from holes which are photoexcited in the GaAs contact region, and which subsequently tunnel into the well.
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71.35.-y Excitons and related phenomena
79.60.Dp Adsorbed layers and thin films
79.70.+q Field emission, ionization, evaporation, and desorption
78.47.-p Spectroscopy of solid state dynamics
78.55.Cr III-V semiconductors

Effect of temperature on the operating characteristics of asymmetric Fabry–Perot reflection modulators

R. H. Yan and L. A. Coldren

Appl. Phys. Lett. 57, 267 (1990); http://dx.doi.org/10.1063/1.103710 (3 pages) | Cited 5 times

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The temperature‐dependent performance of low‐voltage asymmetric Fabry–Perot transverse modulators is studied. While the heavy hole exciton moves with a rate of 2.4 Å/°C, the Fabry–Perot mode shifts with a rate three times slower, 0.8 Å/°C. This can provide a large and nearly constant value of reflection modulation (∼13%/V) over a relatively wide (15 °C) temperature range, as compared to more simple transverse absorption modulators. However, the contrast ratio varies from 15 to 3.5.
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42.79.Hp Optical processors, correlators, and modulators
42.30.Lr Modulation and optical transfer functions
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
07.60.-j Optical instruments and equipment

Nanolithography on semiconductor surfaces under an etching solution

L. A. Nagahara, T. Thundat, and S. M. Lindsay

Appl. Phys. Lett. 57, 270 (1990); http://dx.doi.org/10.1063/1.103711 (3 pages) | Cited 43 times

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We describe a technique for controllably etching nanometer size features into Si(100) and GaAs(100) surfaces with the scanning tunneling microscope while under a (0.05%) HF solution which dissolves oxides. The etching mechanism appears to be due to a field‐induced oxide growth followed by a chemical etching of the oxide. With this technique, we can etch features as small as 20 nm in linewidth.
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07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
81.65.-b Surface treatments
82.45.-h Electrochemistry and electrophoresis

Selective epitaxial growth by rapid thermal processing

S. K. Lee, Y. H. Ku, T. Y. Hsieh, K. Jung, and D. L. Kwong

Appl. Phys. Lett. 57, 273 (1990); http://dx.doi.org/10.1063/1.103712 (3 pages) | Cited 4 times

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Rapid thermal processing chemical vapor deposition was employed for selective epitaxial growth of silicon. Defect‐free epitaxial islands were grown into oxide windows with 〈110〉 sidewall orientation on (100) silicon substrates. The effects of growth temperature on the degree of faceting have been studied. The hydrogen prebake temperatures as low as 1000 °C have proven to be sufficient for high quality Si deposition without sidewall oxide undercutting.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.40.Gh Other heat and thermomechanical treatments

Diffusion in GaAs of a native defect tagged with deuterium

Richard A. Morrow

Appl. Phys. Lett. 57, 276 (1990); http://dx.doi.org/10.1063/1.103713 (3 pages) | Cited 8 times

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We interpret published depth profiles of deuterium in n‐ and p‐type GaAs, following long anneals at 500 °C in a gaseous deuterium atmosphere, as indicating the indiffusion of a native defect (probably VAs) and an impurity (possibly O), both tagged with deuterium. Model fits yield the 500 °C diffusivity of the tagged impurity as 4×10−14 cm2/s and the diffusivities of the tagged native defect as 3×10−15 cm2/s in n‐GaAs and ∼8×10−15 cm2/s in p‐GaAs.
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66.30.J- Diffusion of impurities
66.30.Lw Diffusion of other defects
61.72.jd Vacancies
61.72.jj Interstitials

Decomposition of trimethylgallium on the gallium‐rich GaAs (100) surface: Implications for atomic layer epitaxy

J. Randall Creighton, Keith R. Lykke, Vasgen A. Shamamian, and Bruce D. Kay

Appl. Phys. Lett. 57, 279 (1990); http://dx.doi.org/10.1063/1.103714 (3 pages) | Cited 32 times

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The decomposition of trimethylgallium (TMGa) on the gallium‐rich (4×6) and (1×6) GaAs (100) surface was studied with temperature programmed desorption, Auger electron spectroscopy, and low‐energy electron diffraction. TMGa was found to dissociatively chemisorb on the gallium‐rich surfaces, apparently at the gallium vacancies that exist on these surfaces. We have unambiguously identified methyl radicals desorbing from the surface with the maximum rate at ∼440 °C following a saturation TMGa exposure. Since TMGa was shown to decompose on the clean, gallium‐rich GaAs (100) surfaces, the self‐limiting deposition of gallium during atomic layer epitaxy must be due to the presence of surface methyl groups which inhibit further TMGa dissociative chemisorption.
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68.43.-h Chemisorption/physisorption: adsorbates on surfaces
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
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