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23 Jul 1990

Volume 57, Issue 4, pp. 321-413

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InGaAs/AlGaAs strained single quantum well diode lasers with extremely low threshold current density and high efficiency

H. K. Choi and C. A. Wang

Appl. Phys. Lett. 57, 321 (1990); http://dx.doi.org/10.1063/1.103678 (3 pages) | Cited 57 times

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Graded‐index separate‐confinement heterostructure InGaAs/AlGaAs single quantum well diode lasers emitting at 1.02 μm have been fabricated from structures grown by organometallic vapor phase epitaxy. Under pulsed operation, threshold current densities as low as 65 A/cm2, the lowest reported for InGaAs/AsGaAs lasers, have been obtained for a cavity length L of 1500 μm. Differential quantum efficiencies as high as 90% have been obtained for L=300 μm. Output powers as high as 1.6 W per facet and power conversion efficiencies as high as 47% have been obtained for continuous operation of uncoated lasers with L=1000 μm.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
81.15.Kk Vapor phase epitaxy; growth from vapor phase

High contrast multiple quantum well optical bistable device with integrated Bragg reflectors

B. G. Sfez, J. L. Oudar, J. C. Michel, R. Kuszelewicz, and R. Azoulay

Appl. Phys. Lett. 57, 324 (1990); http://dx.doi.org/10.1063/1.103679 (3 pages) | Cited 34 times

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Monolithic bistable étalons with a GaAs/Al0.3Ga0.7As multiple quantum well active layer and AlAs/Al0.1Ga0.9As Bragg reflectors have been fabricated by metalorganic vapor phase epitaxy. The design of the whole structure is such that a good cavity finesse and a high contrast in the reflective mode are simultaneously obtained. This results in a bistability power threshold of <3 mW at 838 nm and a contrast ratio as high as 30:1. The nonlinear refractive index is shown to saturate at higher power, which evidences the need of a good cavity finesse for such bistable devices.
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42.79.Dj Gratings
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Very low drive voltage optical waveguide modulation in an InGaAs/InAlAs superlattice

E. Bigan, M. Allovon, M. Carre, and P. Voisin

Appl. Phys. Lett. 57, 327 (1990); http://dx.doi.org/10.1063/1.103680 (3 pages) | Cited 12 times

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We report the first room‐temperature observation of Wannier–Stark localization under waveguide configuration in a short‐period InGaAs‐InAlAs superlattice. Using the ‘‘oblique’’ transition connecting a hole localized in a well with an electron localized in the adjacent well we have achieved a modulator having a 20 dB extinction ratio and a 3 dB attenuation with a drive voltage as low as 0.8 V. Our device is a 560‐μm‐long waveguide operating at 1.55 μm under TE polarization mode.
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42.79.Gn Optical waveguides and couplers
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.20.Jq Electro-optical effects
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Effect of scattering on the longitudinal mode spectrum of 1.3 μm InGaAsP semiconductor diode lasers

Frank H. Peters and Daniel T. Cassidy

Appl. Phys. Lett. 57, 330 (1990); http://dx.doi.org/10.1063/1.103681 (3 pages) | Cited 11 times

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The scattering of stimulated emission within InGaAsP semiconductor diode lasers has been measured and correlated with the measured spectral output of the lasers. It is found that the spectral output of the diode lasers is strongly dependent on internal scattering. It is also found that the amount of scattering is characteristic of the laser structure. A theoretical model has been developed which demonstrates the effect of scattering on the spectral output, and which explains the differences observed in the spectral output of different structures in terms of the internal scattering.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking
42.55.Ah General laser theory

Gain and gain saturation spectra in 1.5 μm multiple quantum well optical amplifiers

G. Eisenstein, U. Koren, G. Raybon, J. M. Wiesenfeld, and M. Wegener

Appl. Phys. Lett. 57, 333 (1990); http://dx.doi.org/10.1063/1.103682 (3 pages) | Cited 3 times

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We describe the wavelength dependence of small‐signal picosecond pulse energy gain and cw power gain, as well as saturation energy and saturation output power spectra, in 1.5 μm multiple quantum well optical amplifiers of different lengths and under various drive conditions. The present devices have gain spectra with bandwidths (3 dB) that can exceed 1000 Å. Saturation output energies and powers increase with wavelength and are as large as 5 pJ and ∼40 mW, respectively.
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42.79.Hp Optical processors, correlators, and modulators
42.79.Gn Optical waveguides and couplers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Nonlinear optical properties of molecular beam epitaxy grown Bi1−xSbx

E. R. Youngdale, J. R. Meyer, C. A. Hoffman, F. J. Bartoli, D. L. Partin, C. M. Thrush, and J. P. Heremans

Appl. Phys. Lett. 57, 336 (1990); http://dx.doi.org/10.1063/1.103683 (3 pages) | Cited 10 times

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We discuss the first investigation of Bi1−xSbx as an infrared nonlinear optical material. Nondegenerate four‐wave mixing experiments at CO2 laser wavelengths yield a large nonlinearity (χ(3)≊3×10−4 esu) which does not saturate at power densities up to 0.5 MW/cm2. Both the ambient and substrate interfaces of the film are highly reflective and the étalon they form is found to have a large effect on the transmission and reflectivity spectra of the as‐grown films. This suggests the possibility that constructive interference of the film’s internal optical fields could be used to considerably enhance the nonlinear signal.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.-a Optical materials
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.20.-e Optical properties of bulk materials and thin films

Positive‐streamer‐like phenomena in point‐plane corona gaps: Trichel pulses and high‐pressure cathode sheath instabilities

Mirko Cernák, Tatsuzo Hosokawa, and Masayuki Inoshima

Appl. Phys. Lett. 57, 339 (1990); http://dx.doi.org/10.1063/1.103684 (2 pages) | Cited 6 times

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Current pulse shapes have been measured in negative and positive corona discharges mostly in dry air. Negative corona Trichel pulses and pulses corresponding to the primary streamer/cathode contact in a positive point‐plane gap were found to exhibit remarkable similarities, indicating a positive‐streamer‐like mechanism for the Trichel pulse development. High‐frequency instabilities of the high‐pressure filamentary glow discharge, which can be responsible for the arcing from freshly polished cathodes, were observed and attributed to local positive‐streamer‐like breakdowns of the cathode sheath.
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52.80.Hc Glow; corona
52.80.Mg Arcs; sparks; lightning; atmospheric electricity
52.35.Py Macroinstabilities (hydromagnetic, e.g., kink, fire-hose, mirror, ballooning, tearing, trapped-particle, flute, Rayleigh-Taylor, etc.)

Er/Si (111) interface intermixing investigation using core level photoemission

L. Haderbache, P. Wetzel, C. Pirri, J. C. Peruchetti, D. Bolmont, and G. Gewinner

Appl. Phys. Lett. 57, 341 (1990); http://dx.doi.org/10.1063/1.103685 (3 pages) | Cited 7 times

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We present in this letter Si 2p core level photoemission measurements on the Er/Si (111) interface formed at room temperature. These spectroscopic data are compared with those measured on amorphous silicide films for various Er concentrations grown by coevaporation of Er and Si species at room temperature under ultrahigh vacuum conditions. This study reveals a strong interaction between Er and the Si (111) substrate even at very low coverage. A mixed interface is observed with silicide formation up to 6 monolayers of deposited metal which corresponds to the onset of erbium metal overgrowth. The Er concentration in the interfacial silicide is found to increase as a function of the deposited Er thickness. A model for the interface is proposed and discussed.
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81.65.-b Surface treatments
79.60.Bm Clean metal, semiconductor, and insulator surfaces
73.40.Ns Metal-nonmetal contacts
68.35.Fx Diffusion; interface formation

Photoinduced hole carriers and enhanced resistance to photorefraction in Mg‐doped LiNbO3 crystals

Hong Wang, Jin‐ke Wen, Jiang Li, Hua‐fu Wang, and Jing Jing

Appl. Phys. Lett. 57, 344 (1990); http://dx.doi.org/10.1063/1.103686 (2 pages) | Cited 6 times

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The sign of photoinduced free carriers of LiNbO3:Mg and LiNbO3:Mg:Fe(0.05 wt. %) with various MgO contents has been determined by the holographic technique. The photorefraction of these crystals has also been studied. The enhanced resistance to photorefraction of LiNbO3:Mg(≳5 mol % MgO) results from the occurrence of photoinduced hole free carriers, whose concentration is nearly equal to the electron concentration.
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72.40.+w Photoconduction and photovoltaic effects
78.20.Jq Electro-optical effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Atomic structure of twins in GaAs

Byung‐Teak Lee, Jeong Yong Lee, and Edith D. Bourret

Appl. Phys. Lett. 57, 346 (1990); http://dx.doi.org/10.1063/1.103687 (2 pages) | Cited 7 times

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Two types of twins with different atomic structure may exist in GaAs: rotation type and reflection type. A selective chemical etching technique was employed to clarify which of these two twin types occurs in practical GaAs crystals. Twins in an As‐rich horizontal Bridgman (HB) GaAs, a Ga‐rich HB GaAs, and a liquid‐encapsulated Czochralski GaAs were studied, and the results showed that all of the studied twins were rotation type. This suggests that the bonding configuration at the twin plane is a more important factor than stoichiometry of the crystal, in determining the type of twins in GaAs.
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61.72.Mm Grain and twin boundaries
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Nucleation enhancement of diamond synthesized by combustion flame techniques

K. V. Ravi and C. A. Koch

Appl. Phys. Lett. 57, 348 (1990); http://dx.doi.org/10.1063/1.103688 (3 pages) | Cited 49 times

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The nucleation density and the morphology of diamond crystals and films, synthesized by the combustion flame technique, are shown to be strongly influenced by the nucleation processes at work. Nucleation of diamond on a mechanically abraded molybdenum surface results in well‐formed cubo octahedrons with a relatively low nucleation density. Nucleation on an initially formed, diamond‐like carbon layer markedly increases the nucleation density and alters the morphology of the diamond crystals and film. The enhancement of nucleation by diamond‐like carbon layers is postulated to be a result of the high surface defect density and the high hydrogen concentration of these materials.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

Defect‐free epitaxial lateral overgrowth of oxidized (111) Si by liquid phase epitaxy

R. Bergmann, E. Bauser, and J. H. Werner

Appl. Phys. Lett. 57, 351 (1990); http://dx.doi.org/10.1063/1.103689 (3 pages) | Cited 18 times

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We report on epitaxial lateral overgrowth of Si on oxidized (111) Si wafers by liquid phase epitaxy. The growth starts in oxide‐free seeding windows and proceeds laterally over the SiO2. Growth effectively ceases when (111) sidewalls form. This observation allows the development of a geometrical model that, for the first time, explains the observed dependence of the overgrowth width on the orientation of the seeding windows. We obtain a maximum overgrowth width of 120–130 μm and a maximum aspect ratio of 40:1. Transmission electron microscopy reveals no crystallographic defects in the overgrown lamellae.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.55.-a Thin film structure and morphology
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Selective chemical vapor deposition of tungsten using WF6 and GeH4

C. A. van der Jeugd, G. J. Leusink, G. C. A. M. Janssen, and S. Radelaar

Appl. Phys. Lett. 57, 354 (1990); http://dx.doi.org/10.1063/1.103690 (3 pages) | Cited 11 times

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Germane (GeH4) has, for the first time, been used as a reducing agent for tungsten hexafluoride in selectively depositing tungsten on silicon. As shown by x‐ray diffraction, films deposited below 400 °C consist of the β‐W phase with A15 cubic crystal structure. This A15 structure proved to be stabilized by germanium which is probably incorporated in the film as a hitherto unknown W3Ge compound. Annealing for 1 h at 575 °C did not change the β‐W structure to the low‐resistivity body‐centered‐cubic α phase of tungsten. The superconducting transition temperature of the films is ≊3 K. The growth rate dependence on temperature, total pressure, and WF6, GeH4, and H2 partial pressure has been investigated. At deposition temperatures above 400 °C the deposited films consist of a mixture of the β and α‐W phase.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.40.Ls Metallization, contacts, interconnects; device isolation
74.78.-w Superconducting films and low-dimensional structures
74.70.Ad Metals; alloys and binary compounds (including A15, MgB2, etc.)

Copper silicide formation by rapid thermal processing and induced room‐temperature Si oxide growth

M. Setton, J. Van der Spiegel, and B. Rothman

Appl. Phys. Lett. 57, 357 (1990); http://dx.doi.org/10.1063/1.104105 (3 pages) | Cited 22 times

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The growth of copper silicide has been studied by rapid thermal processing (RTP) of 500 Å of Cu on Si substrates. Interaction between the diffusing metal and Si starts at 250–300 °C. Annealing at higher temperatures yields complete silicidation to Cu3Si. This leads to strong modifications of the Auger line shapes of both Si and Cu. A plasmon peak located 20 eV below the main peak is the fingerprint in the Cu spectrum. Strong features at 80, 85.6, 89.2, and 93.2 eV as well as a 1 eV shift of the 90.4 eV peak appear in the Si L2,3VV spectrum. Whether for Cu films annealed in nitrogen or in vacuum, exposure of the silicide to air results in the growth of silicon oxide at room temperature and continues until the silicide layer is totally converted. This repeatable and controllable oxidation of silicon is accompanied by changes in resistivity and color reflecting the extent of the process. For Cu/CoSi2/Si structures, the cobalt silicide acts as a transport medium for the growth of the copper silicide and also serves as a cap preventing the oxidation of the final CoSi2/Cu3Si/Si contacts
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.35.Fx Diffusion; interface formation
61.72.uf Ge and Si
81.40.Gh Other heat and thermomechanical treatments

Thermally induced hole‐electron competition in photorefractive InP:Fe due to the Fe2+ excited state

P. Delaye, P. U. Halter, and G. Roosen

Appl. Phys. Lett. 57, 360 (1990); http://dx.doi.org/10.1063/1.103691 (3 pages) | Cited 7 times

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The photorefractive coupling gain is limited in InP:Fe even if there is no direct hole‐electron competition. One has to take into account the excited state of Fe2+ (5T2) with its strong thermal emission(1/βth≂100 ns). This leads to an indirect hole‐electron competition mechanism and helps to explain experimental results. This coupling gain reduction is inherent to the nature of the Fe dopant in InP for wavelengths below 1.2 μm and temperature above 170 K.
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78.20.-e Optical properties of bulk materials and thin films
78.20.Jq Electro-optical effects
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
71.35.-y Excitons and related phenomena

Influence of defect absorption on the absorption edge in Hg0.8Cd0.2Te

Jue Wang, Wei Lu, Jiming Liu, Zhenzhong Yu, and Dingyuan Tang

Appl. Phys. Lett. 57, 363 (1990); http://dx.doi.org/10.1063/1.103692 (3 pages) | Cited 5 times

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The optical absorption edges in gettered and ungettered Hg0.8Cd0.2Te alloys have been investigated. It is found that the absorption edge was moved to the short wave direction after the sample was gettered. The change of absorption edge has also been found in Hg0.8Cd0.2Te containing different mercury concentrations. Possible explanations for the phenomena are discussed.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
78.30.Fs III-V and II-VI semiconductors
71.55.Gs II-VI semiconductors
72.80.Ey III-V and II-VI semiconductors

Inducing normally forbidden transitions within the conduction band of GaAs quantum wells

Janet L. Pan, Lawrence C. West, Susan J. Walker, Roger J. Malik, and John F. Walker

Appl. Phys. Lett. 57, 366 (1990); http://dx.doi.org/10.1063/1.103693 (3 pages) | Cited 16 times

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Six heretofore unobserved envelope state transitions within the conduction band of an AlAs/GaAs quantum well are reported, two of which are forbidden in a symmetric quantum well. The highest energy transition is resonant with 2.86 μm wavelength light. These resonant energies and absorption strengths agree with predictions based on a many‐body theory of electrons in nonparabolic energy bands. A new type of infrared modulator is possible via absorption changes in the ‘‘forbidden’’ transition between the first and the third conduction subbands.
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78.30.Fs III-V and II-VI semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.79.Hp Optical processors, correlators, and modulators

Wet oxidation of GeSi strained layers by rapid thermal processing

D. K. Nayak, K. Kamjoo, J. S. Park, J. C. S. Woo, and K. L. Wang

Appl. Phys. Lett. 57, 369 (1990); http://dx.doi.org/10.1063/1.103694 (3 pages) | Cited 77 times

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A cold‐wall rapid thermal processor is used for the wet oxidation of the commensurately grown GexSi1−x layers on Si substrates. The rate of oxidation of the GexSi1−x layer is found to be significantly higher than that of pure Si, and the oxidation rate increases with the increase in the Ge content in GexSi1−x layer. The oxidation rate of GexSi1−x appears to decrease with increasing oxidation time for the time‐temperature cycles considered here. Employing high‐frequency and quasi‐static capacitance‐voltage measurements, it is found that a fixed negative oxide charge density in the range of 1011– 1012/cm2 and the interface trap level density (in the mid‐gap region) of about 1012/cm2 eV are present. Further, the density of this fixed interface charge at the SiO2/GeSi interface is found to increase with the Ge concentration in the commensurately grown GeSi layers.
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81.65.-b Surface treatments
85.40.Hp Lithography, masks and pattern transfer
81.40.Gh Other heat and thermomechanical treatments
73.20.At Surface states, band structure, electron density of states

Asymmetric conductance peaks observed in silicon metal‐oxide‐semiconductor capacitors

S. Collins, M. J. Kirton, and M. J. Uren

Appl. Phys. Lett. 57, 372 (1990); http://dx.doi.org/10.1063/1.103695 (3 pages) | Cited 1 time

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We report the observation of highly asymmetric peaks in conductance data from silicon metal‐oxide‐semiconductor capacitors. By extending the standard surface‐potential fluctuation model to incorporate a range of capture cross sections at a given surface potential, we obtain excellent fits to the experimental data. Our results are consistent with capture into the ‘‘fast’’ Si:SiO2 interface states taking place either by direct tunneling or via an activated capture process.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.40.Gk Tunneling
84.32.Tt Capacitors
85.30.De Semiconductor-device characterization, design, and modeling

Defect‐free, conformally grown (100) GaAs films

D. Pribat, M. Dupuy, P. Legagneux, and C. Collet

Appl. Phys. Lett. 57, 375 (1990); http://dx.doi.org/10.1063/1.103696 (3 pages)

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By using selective epitaxy, submicron‐thick (100) GaAs films can be conformally grown between two sandwiching dielectric layers. The defect structure of such GaAs films is investigated using chemical etching and transmission electron microscopy. The conformally grown films exhibit specular surfaces and appear virtually free from defects. A qualitative model for defect trapping is presented which suggests that the dislocations are blocked on the capping dielectric layer when they should thread laterally.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology
61.72.S- Impurities in crystals
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Correlation between electronegativity and dopant activity in ion‐implanted semi‐insulating GaAs

G. Srinivasan and B. J. Sealy

Appl. Phys. Lett. 57, 378 (1990); http://dx.doi.org/10.1063/1.103697 (2 pages) | Cited 1 time

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The effects of rapid thermal annealing (RTA) on the electrical activity of various implanted dopants (Be, Mg, Zn, and Hg) in semi‐insulating GaAs have been studied by Van der Pauw Hall measurements and Polaron profiling. The relationship between the observed variation in the electrical activation energies of these acceptors and their local electronegativity has been investigated to envisage the possible microscopic mechanism of the activation of the dopants in GaAs.
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61.72.U- Doping and impurity implantation
72.80.Ey III-V and II-VI semiconductors
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Phonons in epitaxially grown α‐Sn1−xGex alloys

J. Menéndez, K. Sinha, H. Höchst, and M. A. Engelhardt

Appl. Phys. Lett. 57, 380 (1990); http://dx.doi.org/10.1063/1.103698 (3 pages) | Cited 10 times

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We present a Raman scattering study of optical phonons in α‐Sn1−xGex alloys (x≤0.08) grown by molecular beam epitaxy on CdTe (100) substrates. The Raman spectra provide strong evidence for the growth of high quality films in the diamond‐structure phase. The composition dependence of the Raman modes shows some qualitative differences with results from the isomorphic Ge1−xSix system. We show that these differences can be understood in terms of a simple model that considers confinement and strain effects.
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63.50.-x Vibrational states in disordered systems
78.35.+c Brillouin and Rayleigh scattering; other light scattering
63.20.D- Phonon states and bands, normal modes, and phonon dispersion
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Tunable long‐wavelength detectors using graded barrier quantum wells grown by electron beam source molecular beam epitaxy

B. F. Levine, C. G. Bethea, V. O. Shen, and R. J. Malik

Appl. Phys. Lett. 57, 383 (1990); http://dx.doi.org/10.1063/1.103699 (3 pages) | Cited 38 times

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We discuss a new design for a voltage tunable graded barrier multiquantum well infrared detector. The tunability of this detector is significantly better than previous designs. It has large shifts in peak position, spectral width, and long‐wavelength cutoff.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.30.Fs III-V and II-VI semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Improved microwave performance in transistors based on real space electron transfer

Mark R. Hueschen, Nick Moll, and Alice Fischer‐Colbrie

Appl. Phys. Lett. 57, 386 (1990); http://dx.doi.org/10.1063/1.103700 (3 pages) | Cited 12 times

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Experimental results on an improved type of transistor based on real space electron transfer are presented. Microwave measurements through 25 GHz show an extrapolated fT of 60 GHz and a measured fMAX of 18 GHz. These gain‐bandwidth products are approximately twice as high as any previously reported for this relatively new class of device. This improvement in performance results from a novel device design which incorporates a doped, pseudomorphic InGaAs channel, a GaAs collector drift region, and a collector‐up structure.
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85.30.Hi Surface barrier, boundary, and point contact devices
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
79.40.+z Thermionic emission

Void formation, electrical activation, and layer intermixing in Si‐implanted GaAs/AlGaAs superlattices

S.‐Tong Lee, Samuel Chen, G. Braunstein, Kei‐Yu Ko, Mary L. Ott, and T. Y. Tan

Appl. Phys. Lett. 57, 389 (1990); http://dx.doi.org/10.1063/1.103701 (3 pages) | Cited 7 times

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Direct experimental evidence is presented for the correlation between void formation, dopant electrical activation, and layer intermixing in GaAs/AlGaAs superlattices (SLs). Maximum layer intermixing is observed in the regions of maximum carrier concentration and no or little void formation in Si‐implanted and annealed SLs. In SLs implanted at room temperature, Si activation and layer intermixing enhancement are severely inhibited in the near‐surface region where voids are formed. However, when implantation is carried out at 250 °C, both the suppression of Si activation and layer intermixing enhancement in the near‐surface region are reduced, concurrent with a decrease in void density.
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61.72.U- Doping and impurity implantation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
68.35.Fx Diffusion; interface formation
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