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30 Jul 1990

Volume 57, Issue 5, pp. 419-526

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Observation of optical bistability by charge‐induced self‐feedback in biased AlGaAs multiple quantum well structures

K. Obata, M. Yamanishi, Y. Yamaoka, Y. Kan, J. Hayashi, and I. Suemune

Appl. Phys. Lett. 57, 419 (1990); http://dx.doi.org/10.1063/1.103653 (3 pages) | Cited 11 times

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A new type of optical bistable device is demonstrated. We report the first observation of optical bistable switching caused by charge‐induced self‐feedback due to field screening in GaAs/AlGaAs multiple quantum well structures, both at room temperature and at low temperature (110 K). A bias voltage supply is directly connected to the p‐i‐n diode with the multiple quantum well structure to attain optical bistability. Since no external series resistance is required, the device is attractive from the standpoint of a practical application. The mechanism for the self‐feedback underlying the operation of the device is elaborated. The theoretical consideration about the resolvable spot size on the device operation is shown.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

High‐gain photorefractive two‐beam coupling in semi‐insulating GaAs with pump‐controlled suppression of the Schottky barrier

Doron Chomsky, Shmuel Sternklar, Arie Zigler, and Steven Jackel

Appl. Phys. Lett. 57, 422 (1990); http://dx.doi.org/10.1063/1.103654 (3 pages) | Cited 1 time

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Suppression of the Schottky barrier effect in semi‐insulating GaAs is demonstrated by centering the pump irradiation on the reverse bias crystal‐electrode interface. A photorefractive gain coefficient Γ of 2.7 cm−1 is achieved. The irradiation suppression overcomes the need for externally applied ohmic contacts.
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78.20.-e Optical properties of bulk materials and thin films
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.55.Mv Dye lasers
73.30.+y Surface double layers, Schottky barriers, and work functions

High‐resolution ablation of amorphous polymers using CO2 laser irradiation

Mark F. Sonnenschein and C. Michael Roland

Appl. Phys. Lett. 57, 425 (1990); http://dx.doi.org/10.1063/1.103655 (3 pages) | Cited 8 times

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Etching of various amorphous polymers by the application of CO2 laser radiation (10.6 μm) is described. By passage of the radiation through a high‐resolution mask in contact with the polymer surface, this ablation can produce images having submicron resolution and good edge acuity. The laser intensity required for ablation is compared for various thermoplastic and thermosetting polymers. Below the required level of intensity, no ablation is observed, but the laser irradiation can result in thermal crystallization. The energy necessary to induce ablation with infrared radiation is comparable to that required for UV decomposition.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments
78.66.Qn Polymers; organic compounds

Study of crystallographic orientations in the diamond film on cubic boron nitride using Raman microprobe

M. Yoshikawa, H. Ishida, A. Ishitani, T. Murakami, S. Koizumi, and T. Inuzuka

Appl. Phys. Lett. 57, 428 (1990); http://dx.doi.org/10.1063/1.103656 (3 pages) | Cited 58 times

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We have measured Raman spectra of a diamond film prepared on the (111) surface of cubic boron nitride(c‐BN) by the dc plasma chemical vapor deposition method. The polarization property of the Raman line of diamond agrees well with that of LO phonon for the (111) surface of c‐BN. The agreement between the polarization property of Raman lines of diamond and c‐BN indicates a possibility of the heteroepitaxial growth of the diamond film on the (111) surface of c‐BN. It is found that the diamond layers on c‐BN are under tensile stress of 2.2×1011 dyn/cm2. The value of the corresponding tensile strain agrees well with the lattice mismatch calculated from the lattice constants of c‐BN and diamond, supporting the possibility of the heteroepitaxial growth of the diamond film. Raman spectroscopy is a powerful technique not only to estimate the stress in the diamond film but also to determine the crystallographic orientation.
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78.30.Hv Other nonmetallic inorganics
78.66.-w Optical properties of specific thin films
61.66.Bi Elemental solids

Cryogenic reactive ion etching of silicon in SF6

Tim D. Bestwick, Gottlieb S. Oehrlein, and David Angell

Appl. Phys. Lett. 57, 431 (1990); http://dx.doi.org/10.1063/1.104240 (3 pages) | Cited 13 times

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Reactive ion etching of Si and SiO2 in SF6 plasmas in which the samples are mounted on a liquid‐nitrogen‐cooled electrode has been studied. At this temperature SF6 condenses on the electrode surface, but it is possible to maintain a plasma. Si etch anisotropy has been demonstrated at low temperature, in agreement with previous studies. Mass spectrometry and optical emission spectroscopy indicate that fluorine is the dominant species in the plasma because SF6 and SFx species are removed from the gas phase by condensation.
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81.65.-b Surface treatments
52.40.Hf Plasma-material interactions; boundary layer effects
85.40.Hp Lithography, masks and pattern transfer
52.70.Kz Optical (ultraviolet, visible, infrared) measurements

High current plasma based electron source

H. R. Bauer and M. A. Gundersen

Appl. Phys. Lett. 57, 434 (1990); http://dx.doi.org/10.1063/1.103657 (3 pages) | Cited 2 times

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This letter analyzes the transport of an electron beam that is produced during the conductive phase operation in the cathode fall of a pseudospark or back lighted thyratron for applications that require a high brightness electron source. The beam is estimated to traverse the device without thermalization if the plasma density is ≤2.5×1015 cm−3. High brightness electron sources are necessary for various new plasma based devices, and these results encourage consideration of this electron beam as a new candidate for applications including microwave generation sources, electron sources for accelerators, and plasma based accelerators which require improved cathodes.
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29.25.Bx Electron sources
52.25.Tx Emission, absorption, and scattering of particles
41.75.Fr Electron and positron beams
52.75.Di Ion and plasma propulsion

Measurement of plasma‐neutralized super‐vacuum currents in a gyrotron configuration

D. A. Kirkpatrick, S. H. Gold, W. M. Manheimer, W. M. Black, A. K. Kinkead, D. L. Hardesty, K. W. Killian, and M. Sucy

Appl. Phys. Lett. 57, 437 (1990); http://dx.doi.org/10.1063/1.103658 (3 pages)

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Experimental results are reported on the transport of an electron beam with current in excess of the vacuum space‐charge‐limited value, in a configuration directly applicable to gyrotron oscillators. The vacuum space‐charge limit is circumvented by the introduction of a neutralizing background plasma which is produced by an array of four plasma guns placed immediately downstream of the electron gun anode.
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52.40.Mj Particle beam interactions in plasmas
52.59.Px Hard X-ray sources
52.20.Dq Particle orbits
84.40.Ik Masers; gyrotrons (cyclotron-resonance masers)

Role of long‐lived species in pulsed hollow cathode discharges in N2

P. Choi, Y. Kaufman, and R. Aliaga

Appl. Phys. Lett. 57, 440 (1990); http://dx.doi.org/10.1063/1.103659 (3 pages) | Cited 11 times

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Experiments in pulsed hollow cathode discharges demonstrate that long‐lived species, with lifetime of the order of seconds, play a significant role in the formation of the discharge in nitrogen. Detailed studies show that the effect is strongest in the hollow cathode region. Similar effects are not observed in hydrogen. A simplified model of the destruction of the N2(A3Σ+u) state has been adopted to study the relevance of this level. The possible roles of the metastables in the formation of pulsed hollow cathode discharges are discussed.
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52.80.Hc Glow; corona
34.80.Gs Molecular excitation and ionization
52.75.Kq Plasma switches (e.g., spark gaps)

Investigation of laser‐surface interactions and optical damage mechanisms using excitation by pairs of picosecond laser pulses

L. L. Chase, H. W. H. Lee, and Robert S. Hughes

Appl. Phys. Lett. 57, 443 (1990); http://dx.doi.org/10.1063/1.103660 (3 pages) | Cited 6 times

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It is demonstrated that laser‐surface interactions that cause optical surface damage of nominally transparent materials can be investigated by observing the effects of excitation by pairs of picosecond pulses separated by a variable time delay. Laser‐induced emission of neutrals is used as the detection mechanism in the present experiments.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
42.70.Ce Glasses, quartz
42.70.-a Optical materials
78.20.-e Optical properties of bulk materials and thin films

Key role of oxygen at zinc oxide varistor grain boundaries

F. Stucki and F. Greuter

Appl. Phys. Lett. 57, 446 (1990); http://dx.doi.org/10.1063/1.103661 (3 pages) | Cited 75 times

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The electrical transport properties of zinc oxide varistors are correlated with the chemistry of their grain boundaries. An adsorbed layer of bismuth, about 5 Å thick, is necessary to create potential barriers at the grain boundaries. The height of these potential barriers depends sensitively on the excess amount of oxygen (∼1 monolayer) present at the interfaces between grains. This oxygen enrichment is influenced by thermal processing and by electrical degradation.
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84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)
71.55.Ht Other nonmetals
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Structure of the ZnSe/GaAs heteroepitaxial interface

D. Li, J. M. Gonsalves, N. Otsuka, J. Qiu, M. Kobayashi, and R. L. Gunshor

Appl. Phys. Lett. 57, 449 (1990); http://dx.doi.org/10.1063/1.103662 (3 pages) | Cited 48 times

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Interfaces of pseudomorphic (100) ZnSe/GaAs heterostructures grown by molecular beam epitaxy have been studied by transmission electron microscopy. The observation of three different heterostructures suggests the existence of a transition structure at the ZnSe/GaAs interfaces which have formed on As‐deficient GaAs surfaces. The transition structure appears as a bright line in dark field images of the 200 reflection, while it becomes a dark line in dark field images of the 400 reflection. These observations are explained by assuming the existence of an interface layer which has a zinc blende type structure having vacancies in one of the face centered cubic sublattices.
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68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Nq Composition and phase identification
68.35.Fx Diffusion; interface formation

Quantum transport in ultrathin CoSi2 epitaxial films

J. F. DiTusa, J. M. Parpia, and Julia M. Phillips

Appl. Phys. Lett. 57, 452 (1990); http://dx.doi.org/10.1063/1.103663 (3 pages) | Cited 5 times

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Magnetotransport measurements have been performed in thin cobalt disilicide films epitaxially grown on Si(111) wafers. Films of thickness between 4.0 and 20.0 nm were studied in order to ascertain the important electron scattering rates. A temperature independent contribution to the phase breaking scattering rate was determined and attributed to spin–spin scattering of the conduction electrons which increases as the film thickness is decreased. The origin of this scattering and its importance to the low‐temperature electron transport are discussed.
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73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.20.Fz Weak or Anderson localization
73.61.Ng Insulators

Calorimetric absorption spectroscopy of free and bound excitons in CdS at millikelvin temperatures

L. Podlowski, J. Gutowski, and I. Broser

Appl. Phys. Lett. 57, 455 (1990); http://dx.doi.org/10.1063/1.103664 (3 pages) | Cited 1 time

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It is shown for the first time that the recently developed calorimetric absorption spectroscopy (CAS) is most fruitfully applicable as a direct measure of nonradiative decay of excitonic systems even concerning their fine structure properties if experiments are performed in the mK range achieved in a 3He/4He‐dilution refrigerator. CAS gives hints on different scattering and relaxation processes of longitudinal AL and triplet AF excitons in CdS, and directly evidences nonradiative decay ratios of different bound‐exciton complexes. Even TA‐phonon‐assisted recombination of such systems leads to well measurable CAS signal enhancement.
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71.35.-y Excitons and related phenomena
65.40.Ba Heat capacity
78.20.-e Optical properties of bulk materials and thin films

Effects of reactive versus unreactive metals on the surface recombination velocity at CdS and CdSe(1120) interfaces

Y. Rosenwaks, L. Burstein, Y. Shapira, and D. Huppert

Appl. Phys. Lett. 57, 458 (1990); http://dx.doi.org/10.1063/1.103665 (3 pages) | Cited 20 times

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Direct measurements of the surface recombination velocity (SRV) on etched CdS(1120), CdSe(1120) and at their interfaces with various metal ions and metals (deposited by electrolyte aqueous solutions and in situ thermal evaporation, respectively) have been performed using ultrafast time‐resolved photoluminescence (PL). Correlations with interface states types and energy positions have been found based on surface photovoltage spectroscopy (SPS). The results show that the original semiconductor SRV is retained, and in some cases even decreases, when these surfaces are covered with metals, which tend to react with the semiconductor’s anion, such as Al, Ti, and Zn. On the other hand, the SRV increases sharply as a function of unreactive metals coverage, such as Cu, Au, etc. The PL results are explained in terms of metal‐induced recombination centers at the semiconductor interface, which are introduced or eliminated as observed by SPS.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.55.Hx Other solid inorganic materials

Excellent uniformity of threshold voltage of Si planar‐doped AlInAs/GaInAs heterointerface field‐effect transistors grown by metalorganic chemical vapor deposition

H. Ishikawa, H. Shibata, and M. Kamada

Appl. Phys. Lett. 57, 461 (1990); http://dx.doi.org/10.1063/1.103666 (2 pages) | Cited 2 times

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Si planar‐doped AlInAs layers grown by metalorganic chemical vapor deposition (MOCVD) showed an excellent uniformity in doping concentration. It was caused by the saturation of the doping concentration in the high doping region. Applying this planar doping to the AlInAs/GaInAs heterointerface field‐effect transistor (HIFET), the variation of the threshold voltage (Vth) due to unevenness of distribution of doping concentration was reduced to values below 50 mV over a 2‐in.‐diam wafer.
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85.30.Tv Field effect devices
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Effect of base doping gradients on the electrical performance of AlGaAs/GaAs heterojunction bipolar transistors

S. Noor Mohammad, J. Chen, J‐I. Chyi, and H. Morkoç

Appl. Phys. Lett. 57, 463 (1990); http://dx.doi.org/10.1063/1.103667 (3 pages) | Cited 1 time

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Current‐voltage characteristics of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) grown by molecular beam epitaxy with nonuniform doping in the base region have been studied. Experimental measurements indicate that an optimization of the base doping leads to substantial improvement in the current gain and related properties. Unequal variations of the band‐gap narrowing effect and Fermi–Dirac statistics effect seem to underlie this improvement. It is found that, in general, the higher the nonuniformity of the base doping, the lower is the offset voltage of the HBT.
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85.30.Pq Bipolar transistors
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Band offsets and exciton confinement in Zn1−yCdySe/Zn1−xMnxSe quantum wells

W. J. Wałecki, A. V. Nurmikko, N. Samarth, H. Luo, J. K. Furdyna, and N. Otsuka

Appl. Phys. Lett. 57, 466 (1990); http://dx.doi.org/10.1063/1.104104 (3 pages) | Cited 23 times

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Optical characteristics of a new, weakly strained wide‐gap II‐VI quantum well have been studied with emphasis on the confined exciton states. Strong luminescence efficiency in the blue is observed with spectra showing only weak alloy disorder effects. Magneto‐optical studies yield a measurement for the band offsets in a model which properly includes exciton effects.
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71.35.-y Excitons and related phenomena
78.55.Et II-VI semiconductors
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

Effects of lattice mismatch on InxGa1−xAs/InP heterojunctions

C. D. Lee and S. R. Forrest

Appl. Phys. Lett. 57, 469 (1990); http://dx.doi.org/10.1063/1.103668 (3 pages) | Cited 9 times

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The conduction‐band discontinuities and interface charge densities of several n‐N isotype InxGa1−xAs/InP (x≂0.53) heterojunctions with lattice mismatches (Δa/a) ranging from +0.26 to −0.24% were measured using capacitance‐voltage techniques. To facilitate these measurements, organic‐on‐inorganic contact barrier diodes were used. Extremely low interface charge densities (<1×1010 cm−2) are obtained for all the samples, which are approximately one order of magnitude lower than previously reported values for these heterojunctions. We find that the interface charge density is independent of the magnitude of lattice mismatch and temperature. All the samples show a clear peak‐and‐notch in their apparent free‐carrier concentration profiles at temperatures as low as 83 K. This is in contrast to results reported previously where the notch is observed to disappear at low temperature. The measured heterojunction conduction‐band discontinuity is also found to be temperature independent, with a value of 0.22±0.02 eV.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.20.At Surface states, band structure, electron density of states

Electron beam irradiation enhancement of Al‐Ga interdiffusion at GaAs/AlGaAs quantum well interfaces

Y. J. Li, M. Tsuchiya, and P. M. Petroff

Appl. Phys. Lett. 57, 472 (1990); http://dx.doi.org/10.1063/1.103669 (3 pages) | Cited 7 times

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The effect of room‐temperature electron beam irradiation on the Al‐Ga interdiffusion at GaAs/AlGaAs quantum well heterointerfaces is investigated with low‐temperature cathodoluminescence spectroscopy. The interdiffusion is enhanced by defects generated through an irradiation with a 400 keV electron beam. After room‐temperature irradiation with a dose of ∼1.5×1017–2.5×1017/cm2 and subsequent rapid thermal annealing at 900 °C for 1 min, an interdiffusion length of 3–5 Å is obtained. The electron beam induced damage tends to saturate with increasing irradiation dose, and the formation of defect cluster at high dose limits the defect introduction and, thus, the interdiffusion at the interface.
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61.80.Fe Electron and positron radiation effects
68.35.Fx Diffusion; interface formation
66.30.Ny Chemical interdiffusion; diffusion barriers

Pressure dependence of the intersubband transition in strained In0.15Ga0.85As/GaAs multiple quantum wells

W. Shan, X. M. Fang, D. Li, S. Jiang, S. C. Shen, H. Q. Hou, W. Feng, and J. M. Zhou

Appl. Phys. Lett. 57, 475 (1990); http://dx.doi.org/10.1063/1.103670 (3 pages) | Cited 12 times

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The dependence of the intersubband transitions on pressure in strained In0.15Ga0.85As/GaAs multiple quantum wells has been studied in two samples with well widths of 8 and 15 nm, respectively, with photomodulated transmission spectroscopy by using a diamond anvil cell. The pressure coefficients of the energies for the intersubband transitions were found to depend significantly on the well widths and to be smaller than that of the band gap of constituents in bulk form. These results suggested that the critical thickness for strained In0.15Ga0.85As/GaAs layer should be smaller than 15 nm.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Determination of electric field profiles in amorphous silicon solar cells

R. Könenkamp, S. Muramatsu, H. Itoh, S. Matsubara, and T. Shimada

Appl. Phys. Lett. 57, 478 (1990); http://dx.doi.org/10.1063/1.103672 (3 pages) | Cited 4 times

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Time‐resolved photoconductivity measurements with subnanosecond time resolution are applied to study the electric field profile in amorphous silicon solar cells in the range from 0.3 V forward to 0.8 V reverse bias. The method is used for a comparison of state‐of‐the art devices with different junction design. Optical and electrical contributions to the device performance are discussed and the limitations in improving the performance by use of a‐SiC:H window layers are pointed out.
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84.60.Jt Photoelectric conversion
85.30.De Semiconductor-device characterization, design, and modeling
73.50.Pz Photoconduction and photovoltaic effects

Ion implanted confinement layer for an InP/InGaAs/InP:Fe heterojunction field‐effect transistor

Ch. Lauterbach, D. Römer, and R. Treichler

Appl. Phys. Lett. 57, 481 (1990); http://dx.doi.org/10.1063/1.103648 (3 pages) | Cited 1 time

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A p‐doped confinement layer was fabricated by Be implantation for an InP/InGaAs/InP:Fe heterojunction field‐effect transistor (HFET). The epitaxial layers were grown by metalorganic vapor phase epitaxy and were suitable for the integration with a pin photodiode. The pn junction of the gate was formed by Zn diffusion that is not influenced by the preceding ion implantation. In the output characteristics of the HFET the pinch‐off voltage changes from Vp=−7 V without to Vp=−3.5 V with confinement layer. No degradation of the maximum transconductance was observed. The gate leakage current is 80 nA at a gate source voltage of Vgs=−5 V.
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85.30.Tv Field effect devices
61.72.U- Doping and impurity implantation
71.55.Eq III-V semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

High quality hydrogenated amorphous silicon films by windowless hydrogen discharge

Akira Yoshida, Katsushi Inoue, Haruhiko Ohashi, and Yoji Saito

Appl. Phys. Lett. 57, 484 (1990); http://dx.doi.org/10.1063/1.103627 (3 pages) | Cited 4 times

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Hydrogenated amorphous silicon films were deposited by the direct photolysis of disilane using windowless hydrogen discharge. Electrical and optical properties of the films have been investigated. The photosensitivity (σph/σd) is about 107 in the films prepared at 250 °C, better than that of films obtained by conventional rf plasma chemical vapor deposition.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.50.Pz Photoconduction and photovoltaic effects
61.43.Fs Glasses
61.43.-j Disordered solids
61.44.Br Quasicrystals

Time and injection rate dependence of minority‐carrier diffusion length in solar cells irradiated with x rays

Ian Edmonds

Appl. Phys. Lett. 57, 487 (1990); http://dx.doi.org/10.1063/1.103628 (2 pages)

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The minority‐electron diffusion length in commercial n+p silicon solar cells was determined from measurements of transient photocurrent generated by low‐energy x rays. The results show an order of magnitude increase in diffusion length over a time interval inversely proportional to the square of the injection rate. This accounts for the occurrence of dose rate sensitivity of silicon detectors of x rays at very low injection rates. The strong rate dependence observed suggests a space‐charge trapping mechanism.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.40.+w Photoconduction and photovoltaic effects
61.80.Cb X-ray effects
84.60.Jt Photoelectric conversion

Observation of avalanche propagation by multiplication assisted diffusion in p‐n junctions

A. Lacaita, M. Mastrapasqua, M. Ghioni, and S. Vanoli

Appl. Phys. Lett. 57, 489 (1990); http://dx.doi.org/10.1063/1.103629 (3 pages) | Cited 19 times

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We have investigated for the first time the propagation of the avalanche multiplication over the area of p‐n junctions reverse biased above the breakdown voltage. The multiplication process spreads from the point where the avalanche is triggered to the whole junction area with a speed proportional to the final steady‐state value of the avalanche current. The values of the propagation speed suggest that the phenomenon is due to diffusion of carriers assisted by avalanche multiplication. This effect strongly affects the rise of the avalanche current and turns out to limit the performance of single photon avalanche diodes.
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85.30.De Semiconductor-device characterization, design, and modeling
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.30.Kk Junction diodes
72.20.Ht High-field and nonlinear effects
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