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20 Aug 1990

Volume 57, Issue 8, pp. 739-838

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Frequency stabilization of a 612 nm He‐Ne laser in a transverse magnetic field

Cheon Il Eom, Tae Bong Eom, and Myung Sai Chung

Appl. Phys. Lett. 57, 739 (1990); http://dx.doi.org/10.1063/1.104101 (2 pages) | Cited 1 time

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A simple and versatile frequency stabilization of a 612 nm He‐Ne laser in a transverse magnetic field by the beat frequency stabilization method has been presented. The characteristic magnetic field was 250 G and the width of the single‐mode region was approximately 220 MHz. The obtained frequency stability (Δf/f ) was 5×10−9 over a 1 h period.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Lt Gas lasers including excimer and metal-vapor lasers

S‐bend loss in disorder‐delineated GaAs heterostructure laser waveguides with native and blue shifted active regions

T. Tang, P. Swanson, C. Herzinger, L. M. Miller, T. M. Cockerill, R. P. Bryan, T. A. DeTemple, and J. J. Coleman

Appl. Phys. Lett. 57, 741 (1990); http://dx.doi.org/10.1063/1.103431 (3 pages) | Cited 8 times

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The routing ability of waveguide S‐bend structures patterned by SiO2 impurity induced layer disordering of a single GaAs quantum well graded barrier laser structure is investigated. For a raised‐cosine bend with 100 μm offset guides, the measured transition length for 3 dB loss was less than 300 μm for near single mode guides of 1 μm width. In addition, vacancy‐induced disordering of the native quantum well region is investigated and is shown to increase the band gap to a point where the material is low loss for radiation generated by the laser. The 3 dB length for these blue shifted cores actually decreased to about 230 μm, a fact attributed to reduced mode conversion.
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42.79.Gn Optical waveguides and couplers
85.60.-q Optoelectronic devices
42.55.Px Semiconductor lasers; laser diodes
61.72.jd Vacancies
61.72.jj Interstitials

GaAs‐AlAs low‐voltage refractive modulator operating at 1.06 μm

K. W. Goossen, J. E. Cunningham, and W. Y. Jan

Appl. Phys. Lett. 57, 744 (1990); http://dx.doi.org/10.1063/1.103432 (3 pages) | Cited 7 times

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We have produced a nonabsorbing surface‐normal optical modulator operating at 1.06 μm (e.g., for a high‐power Nd‐YAG pump laser) which has a relative transmission change of 16% for −1 to 1 voltage swing. The structure is a GaAs‐AlAs dielectric mirror with alternating n‐ and p‐type δ doping at each interface. Doping selective contacts are made to the sample so that an applied voltage appears equally across each period of the device, yielding a strong field which changes the index of the GaAs and hence shifts the mirror.
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42.79.Hp Optical processors, correlators, and modulators
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
78.20.Jq Electro-optical effects
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks

Growth dynamics of photosensitive gratings in optical fibers

S. LaRochelle, V. Mizrahi, G. I. Stegeman, and J. E. Sipe

Appl. Phys. Lett. 57, 747 (1990); http://dx.doi.org/10.1063/1.103433 (3 pages) | Cited 6 times

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We study the growth dynamics of photosensitive fiber gratings assuming a local bleaching model, and demonstrate that sustained grating growth is possible. Good agreement with our experimental results is obtained after including fiber heating effects.
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63.10.+a General theory
42.81.Dp Propagation, scattering, and losses; solitons
42.81.Bm Fabrication, cladding, and splicing
42.79.Dj Gratings

Resonant cavity enhanced AlGaAs/GaAs heterojunction phototransistors with an intermediate InGaAs layer in the collector

M. S. Ünlü, K. Kishino, J‐I. Chyi, L. Arsenault, J. Reed, S. Noor Mohammad, and H. Morkoç

Appl. Phys. Lett. 57, 750 (1990); http://dx.doi.org/10.1063/1.103410 (3 pages) | Cited 33 times

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Gain and spectral response of heterojunction phototransistors (HPTs) having a thin (0.1 μm) InGaAs strained absorbing layer in the collector has been investigated. Low dark current ∼ 5 pA (1×10−8 A/cm2) and large optical gain as high as 500 were observed. A resonant cavity composed of an AlAs/GaAs buried mirror structure (reflectivity R=0.9) and the epilayer surface (R=0.3) was used to enhance the otherwise small quantum efficiency η (at InGaAs absorption wavelength). For a 1000 Å absorbing layer an improvement of η from 6.7 to 43% (6.4‐fold) was demonstrated, in agreement with calculations, through the spectral analysis of the HPTs with and without resonant cavities.
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85.60.Dw Photodiodes; phototransistors; photoresistors
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Optically induced femtosecond electromagnetic pulses from GaSb/AlSb strained‐layer superlattices

X.‐C. Zhang, B. B. Hu, S. H. Xin, and D. H. Auston

Appl. Phys. Lett. 57, 753 (1990); http://dx.doi.org/10.1063/1.103411 (3 pages) | Cited 19 times

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The strain generated electric field in a 〈111〉 oriented misfit superlattice provides a suitable bias for generating optically induced femtosecond electromagnetic radiation. We have measured the electromagnetic radiation from GaSb/AlSb strained‐layer superlattices and GaSb thin films; extremely fast electromagnetic pulses from 〈111〉 oriented superlattices have been observed. Because the quantum well structure in the superlattice samples limits the pulse duration of the transient photocurrent, it is possible to generate electromagnetic radiation having a pulse duration comparable with the photocarrier transit time across the quantum well.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.20.Jq Electro-optical effects
72.20.Ht High-field and nonlinear effects
73.50.Pz Photoconduction and photovoltaic effects

Stable single mode operation of grating‐surface‐emitting laser arrays under frequency‐modulated operation

N. W. Carlson, D. P. Bour, G. A. Evans, R. Amantea, and S. K. Liew

Appl. Phys. Lett. 57, 756 (1990); http://dx.doi.org/10.1063/1.103412 (3 pages) | Cited 1 time

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Direct frequency‐modulated operation of ridge‐guided linear grating‐surface‐emitting laser arrays is reported. Simultaneous far‐field and spectral measurements of these devices at 1 GHz modulation rates show that both single longitudinal mode and single spatial mode operation are maintained.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.55.Rz Doped-insulator lasers and other solid state lasers

Transform‐limited 1.4 ps optical pulses from a monolithic colliding‐pulse mode‐locked quantum well laser

M. C. Wu, Y. K. Chen, T. Tanbun‐Ek, R. A. Logan, M. A. Chin, and G. Raybon

Appl. Phys. Lett. 57, 759 (1990); http://dx.doi.org/10.1063/1.103413 (3 pages) | Cited 27 times

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We report the generation of short optical pulses from novel monolithic colliding‐pulse mode‐locked quantum well lasers. Transform‐limited pulses with durations of 1.4 ps at a repetition rate of 32.6 GHz have been achieved, with nearly 100% intensity modulation depth and a peak optical power of 10 mW. This is the shortest transform‐limited pulse directly generated from monolithic mode‐locked lasers (time‐bandwidth product =0.3).
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42.60.Fc Modulation, tuning, and mode locking
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
85.60.Jb Light-emitting devices

Pressure‐dependent transition in the mechanism of remote plasma SiNx deposition

Scott Meikle and Yoshinori Hatanaka

Appl. Phys. Lett. 57, 762 (1990); http://dx.doi.org/10.1063/1.104259 (3 pages) | Cited 6 times

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Optical emission properties in remote plasma deposition of SiNx from an N2 electron cyclotron resonance microwave plasma and SiH4 have been investigated over a pressure range of 0.002–0.3 Torr. The deposition process divides into three pressure regions. For p≳0.1 Torr, film deposition results from gas phase reactions between active nitrogen and SiH4. For p<0.02 Torr SiH4 travels back to the plasma and deposition results from radical species created in the N2/SiH4 mixture. At intermediate pressures deposition was negligible because neither process could substantially break down SiH4.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.43.-h Chemisorption/physisorption: adsorbates on surfaces

Periodic surface structures in the excimer laser ablative etching of polymers

P. E. Dyer and R. J. Farley

Appl. Phys. Lett. 57, 765 (1990); http://dx.doi.org/10.1063/1.103414 (3 pages) | Cited 41 times

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Periodic surface structures have been observed on organic polymers when photoablated using low coherence excimer lasers. Both unpolarized and linearly polarized radiation at 248 and 308 nm produce well ordered, micron‐scale structures over dimensions greatly exceeding the coherence area of the laser at the surface. Surface scattered wave effects appear to explain these structures.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
68.35.B- Structure of clean surfaces (and surface reconstruction)

Low‐temperature reordering in partially amorphized Si crystals

Francesco Priolo, Anna Battaglia, Ruggero Nicotra, and Emanuele Rimini

Appl. Phys. Lett. 57, 768 (1990); http://dx.doi.org/10.1063/1.103415 (3 pages) | Cited 14 times

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The annealing behavior of the damage produced in Si single crystals by 150 keV Au implants at ∼2×1013 ions/cm2 and at substrate temperatures of 77 K (LN2T) and 300 K, room temperature (RT), has been investigated. The annealing kinetics has been studied in the temperature range between 493 and 623 K and for times up to 2 h. Data have demonstrated that, at a fixed temperature some damage anneals out fast and then a saturation occurs for both the LN2T and RT‐damaged samples. This behavior has been tentatively interpreted assuming that the damage is mainly composed by amorphous‐like material and that reordering is initiated at preferential growth sites present at nonplanar crystal‐amorphous interfaces.
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61.72.Bb Theories and models of crystal defects
64.70.K- Solid-solid transitions
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Effect of substrates and film thickness on the structural, optical, and electrical properties of hydrogenated amorphous silicon films

Yoshihiro Hishikawa, Sadaji Tsuge, Noboru Nakamura, Shinya Tsuda, Shoichi Nakano, and Yukinori Kuwano

Appl. Phys. Lett. 57, 771 (1990); http://dx.doi.org/10.1063/1.103416 (3 pages) | Cited 12 times

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Hydrogenated amorphous silicon (a‐Si:H) films have been deposited on different substrates by a plasma chemical vapor deposition method. Raman spectra of the a‐Si:H films are significantly dependent on the material of the substrate (glass, crystalline silicon, and stainless steel). The spectra are also dependent on the thickness of the films. The experimental results indicate that the silicon network structure of a‐Si:H films is dependent on the material of the substrate. The dependence of the optical absorption coefficient and electric conductivities on the thickness is also reported.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.43.Fs Glasses
61.43.-j Disordered solids
61.44.Br Quasicrystals
72.40.+w Photoconduction and photovoltaic effects
73.61.Ng Insulators

Low‐frequency noise in transport through quantum point contacts

Yuan P. Li, D. C. Tsui, J. J. Heremans, J. A. Simmons, and G. W. Weimann

Appl. Phys. Lett. 57, 774 (1990); http://dx.doi.org/10.1063/1.104094 (3 pages) | Cited 83 times

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We report the noise characteristics of quantum point contacts between 100 Hz and 100 kHz at 4.2 K. The noise consists of a 1/f component on top of a white background. The 1/f noise increases as the contact width decreases and shows peaks between the quantized resistance plateaus. The white noise background increases with current but is much lower than the full shot noise level, suggesting that shot noise is not generated in an ideal quantum point contact, where the electrons do not suffer backscattering as they enter and traverse the contact.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Td Noise processes and phenomena
84.32.Dd Connectors, relays, and switches

Characterization of a GaAs current‐controlled bipolar‐unipolar transition negative differential resistance transistor

K. F. Yarn, Y. H. Wang, and C. Y. Chang

Appl. Phys. Lett. 57, 777 (1990); http://dx.doi.org/10.1063/1.103417 (3 pages)

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GaAs current‐controlled bipolar‐unipolar transition negative differential resistance (NDR) transistors using an n+‐i‐p+‐i‐n+ homojunction structure prepared by molecular beam epitaxy are demonstrated. For a base thickness of 200 Å and using a highly doped sheet concentration of 1013 cm−2, a NDR region is revealed for IB<100 μA. The peak‐to‐valley current ratios are about 8 at room temperature. This is proposed to be due to the bipolar–unipolar transition reaction. When IB>=100 μA, the proposed device operates as a conventional bipolar transistor. Additionally, the effects of base thickness on current‐voltage characteristics are also investigated.
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85.30.Pq Bipolar transistors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

B doping effect on reflection high‐energy electron diffraction intensity oscillation during gas source silicon molecular beam epitaxial growth

Hiroyuki Hirayama, Kazuhisa Koyama, Masayuki Hiroi, and Toru Tatsumi

Appl. Phys. Lett. 57, 780 (1990); http://dx.doi.org/10.1063/1.103418 (3 pages) | Cited 3 times

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B doping effect on reflection high‐energy electron diffraction (RHEED) intensity oscillation was studied during gas source Si molecular beam epitaxial growth. During high doping of B above 1020 cm−3, no RHEED oscillation was observed on Si (100) surfaces. This is caused by surface B atoms which disturb surface migration of disilane (Si2H6) molecules. On the other hand, RHEED oscillation was observed on Si (111) √3×√3 B surfaces. At √3×√3 B surfaces, B exists in a subsurface substitutional site, directly underneath a Si adatom. This is the reason why surface migration was not disturbed by surface B atoms on Si (111) √3×√3 B surfaces.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.Ja Surface and interface dynamics and vibrations
68.35.Fx Diffusion; interface formation
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

Time‐resolved luminescence of GaAs/AlGaAs heterostructures grown by molecular beam epitaxy on misoriented substrates

M. Colocci, M. Gurioli, A. Vinattieri, C. Deparis, J. Massies, and G. Neu

Appl. Phys. Lett. 57, 783 (1990); http://dx.doi.org/10.1063/1.103419 (3 pages) | Cited 5 times

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The effects of GaAs substrate misorientation from the (001) plane on the photoluminescence spectra of GaAs/AlGaAs quantum well structures grown by molecular beam epitaxy have been investigated using time‐resolved spectroscopy. It is shown, by comparison with a (001) heterostructure having a high impurity content, that the broadening of photoluminescence spectra, observed when the substrate misorientation is towards the (111)As plane, is very unlikely due to a preferential impurity incorporation but is rather originated from the growth mechanism on this type of surface.
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78.47.-p Spectroscopy of solid state dynamics
71.35.-y Excitons and related phenomena
78.55.Cr III-V semiconductors

Interaction between growing amorphous silicon and glass substrate evidenced by in situ infrared ellipsometry

N. Blayo and B. Drévillon

Appl. Phys. Lett. 57, 786 (1990); http://dx.doi.org/10.1063/1.103420 (3 pages) | Cited 17 times

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An in situ study of the formation of glass/hydrogenated amorphous silicon (a‐Si:H) and glass/a‐SiC:H interfaces by infrared (IR) phase modulated ellipsometry (PME) is presented. The high sensitivity of this new expermental technique is emphasized. In particular as compared to UV‐visible ellipsometry IRPME allows a direct identification of the chemical species incorporated in a film. The presence of a chemical interaction during the formation of the Corning glass/a‐Si:H (or a‐SiC:H) interface is directly revealed by the vibration (near 1480 cm−1) of BO groups, coming from the substrate, incorporated into growing a‐Si:H (or a‐SiC:H). The boron remains incorporated into an interface layer buried at the interface. The mechanisms of this boron incorporation in the amorphous films during the early stage of the growth are discussed. Some possible technological consequences of these behaviors are mentioned.
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72.80.Ng Disordered solids
68.35.Fx Diffusion; interface formation
07.60.Fs Polarimeters and ellipsometers
78.30.Hv Other nonmetallic inorganics

High electrical resistivity diamond films deposited from an oxyacetylene flame

Y. Tzeng, C. C. Tin, R. Phillips, T. Srivinyunon, and Y. Chen

Appl. Phys. Lett. 57, 789 (1990); http://dx.doi.org/10.1063/1.103421 (3 pages) | Cited 8 times

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Diamond films with electrical resistivity as high as 1014 Ω cm have been deposited on silicon, molybdenum, and other foreign substrates from an oxyacetylene flame. Exposure of the highly resistive diamond films to a hydrogen plasma leads to the decrease of the electrical resistivity by several orders of magnitude. Low level incorporation of atomic hydrogen in the oxyacetylene flame into the diamond film under the flame deposition conditions is believed to be the cause of the high electrical resistivity of the flame‐grown diamond films. In contrast to the relatively low resistivity of diamond films deposited in a hydrogen/methane plasma, flame deposition provides a means of growing electrically insulating diamond thin films.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
77.22.Jp Dielectric breakdown and space-charge effects
77.55.-g Dielectric thin films
72.80.Sk Insulators

Evidence for As‐H bonds in H‐implanted GaAs

H. J. Stein

Appl. Phys. Lett. 57, 792 (1990); http://dx.doi.org/10.1063/1.103422 (3 pages) | Cited 12 times

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A new absorption band at 2029 cm−1 has been observed in GaAs following implantation with hydrogen at 80 K. Association of the band with a vibrational mode of hydrogen is confirmed by substitution of deuterium. Tentative assignment is made to As‐H bonds. The new band is unstable below room temperature and a previously identified Ga‐H absorption band forms as the new band is removed by annealing near 200 K.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
61.72.Bb Theories and models of crystal defects
61.72.U- Doping and impurity implantation
61.80.Jh Ion radiation effects

Tunneling real‐space transfer induced by wave function hybridization in modulation‐doped heterostructures

J. M. Bigelow and J. P. Leburton

Appl. Phys. Lett. 57, 795 (1990); http://dx.doi.org/10.1063/1.103423 (3 pages) | Cited 8 times

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We report a new tunneling mechanism in modulation‐doped heterostructures based on wave function hybridization. We show that hybrid wave functions can be formed across the heterojunction by growing highly doped n‐p layers below the undoped GaAs layer. The hybridization creates the condition for hot electrons to transfer by tunneling from the high‐mobility GaAs channel through the heterojunction to the low‐mobility AlGaAs layer and results in a negative differential resistance. The hybrid nature of the wave functions and the smaller energies needed to achieve the transfer across the heterojunction suggest that this effect will occur at lower applied fields than for thermionic emission or tunneling between localized states in adjacent quantum wells.
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85.30.Tv Field effect devices
73.40.Gk Tunneling
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Cross‐section transmission electron microscopy study of carbon‐implanted layers in silicon

H. Wong, J. Lou, N. W. Cheung, E. P. Kvam, K. M. Yu, D. A. Olson, and J. Washburn

Appl. Phys. Lett. 57, 798 (1990); http://dx.doi.org/10.1063/1.103424 (3 pages) | Cited 12 times

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We have used cross‐section transmission electron microscopy (XTEM) to study microstructures of carbon‐implanted silicon layers after high‐temperature annealing. It was found that the threshold dose for extended defect formation was much higher for carbon implantation than for other ion species such as B, P, and O. In 2.4 MeV carbon‐implanted layers, no dislocations were formed for doses as high as 2×1016 cm−2 after annealing at 1000 °C for 1 h. The threshold was found to be lower for low‐energy implantation (100 keV): at a dose of 2×1016 cm−2, when an amorphous layer was formed, microtwins were formed near the projected range upon annealing. Microprecipitates around 50 Å in size were observed in low‐energy carbon‐implanted samples and the precipitates appeared to be under strain.
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61.72.uf Ge and Si
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations
81.30.Mh Solid-phase precipitation

Infrared optical characterization of InAs/Ga1−xInxSb superlattices

R. H. Miles, D. H. Chow, J. N. Schulman, and T. C. McGill

Appl. Phys. Lett. 57, 801 (1990); http://dx.doi.org/10.1063/1.103425 (3 pages) | Cited 59 times

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InAs/Ga1−xInxSb superlattices have been examined by photoluminescence, photoconductivity, and infrared optical transmission. Samples display clear photoconductive thresholds at energies in agreement with band gaps derived from photoluminescence. Far‐infrared energy gaps (8–14 μm and beyond) are obtained for InAs/Ga0.75In0.25Sb superlattices with periods <75 Å, in good agreement with gaps calculated from a simple two‐band model. An absorption coefficient of ∼2000 cm−1 at 10 μm is measured in a superlattice with an energy gap of 11.4 μm. The magnitude and shape of this absorption edge is comparable to that of bulk Hg1−xCdxTe, suggesting that infrared detectors based on InAs/Ga1−xInxSb superlattices may be competitive in the 8–14 μm range and beyond.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.55.Cr III-V semiconductors
85.60.Gz Photodetectors (including infrared and CCD detectors)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Mobility modulation on a modulation‐doped structure with an AlAs/GaAs fractional layer superlattice

K. Tsubaki, Y. Tokura, and N. Susa

Appl. Phys. Lett. 57, 804 (1990); http://dx.doi.org/10.1063/1.103426 (3 pages) | Cited 3 times

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The mobility modulation effect of AlAs/GaAs fractional layer superlattices in an AlGaAs/GaAs modulation‐doped structure, which is used for quantum wire and electron wave interference transistors, is investigated by measuring their sheet electron concentration (ns). The ns obtained by the Shubnikov–de Haas oscillation is the number of high‐mobility electrons. On the other hand, the ns calculated from structural parameters is the total number of the high‐ and low‐mobility electrons. The relationship between the electron mobility and ns is found to be μ∝(ns − nc)γ, where γ=1 and nc=5.9×1011 cm−2. The mobility modulation part in the transconductance exceeds the electron concentration modulation part by a factor of 3.
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73.61.Ey III-V semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
85.30.Tv Field effect devices
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Lateral quantization induced emission energy shift of buried GaAs/AlGaAs quantum wires

B. E. Maile, A. Forchel, R. Germann, J. Straka, L. Korte, and C. Thanner

Appl. Phys. Lett. 57, 807 (1990); http://dx.doi.org/10.1063/1.103427 (3 pages) | Cited 18 times

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Buried GaAs/AlGaAs quantum wires were prepared by Al0.2Ga0.8As overgrowth of deep etched wires defined by high‐resolution electron beam lithography and dry etching. The overgrown wires show a dramatic decrease of the optically inactive sidewall layer compared to open wires. For wires with a lateral dimension Lx=50 nm we observe a spectral shift to higher energies of the excitonic emission, in good agreement with calculations of the two‐dimensional confinement effects.
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81.65.-b Surface treatments
73.61.Ey III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.55.Cr III-V semiconductors

Single and double quantum well lasers with a monolithically integrated passive section

J. Werner, T. P. Lee, E. Kapon, E. Colas, N. G. Stoffel, S. A. Schwarz, L. C. Schwartz, and N. C. Andreadakis

Appl. Phys. Lett. 57, 810 (1990); http://dx.doi.org/10.1063/1.103428 (3 pages) | Cited 16 times

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Single (SQW) and double (DQW) quantum well composite cavity GaAs/AlGaAs lasers with an integrated passive section were fabricated and compared. Si implantation was used for partial quantum well disordering in the passive section. Implanted DQW lasers with a 2.6‐mm‐long cavity had threshold currents of 26.3 mA compared to 33 mA for implanted SQW lasers. The measured resonant absorption in the passive section showed an exponential roll‐off in agreement with Urbach’s law. The characteristic energy E0 associated with Urbach’s law was 6 meV for untreated SQW and DQW lasers and ≊11 meV for implanted SQW and DQW lasers.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking
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