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27 Aug 1990

Volume 57, Issue 9, pp. 843-945

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Effect of confining layer aluminum composition on AlGaAs‐GaAs‐InGaAs strained‐layer quantum well heterostructure lasers

P. K. York, S. M. Langsjoen, L. M. Miller, K. J. Beernink, J. J. Alwan, and J. J. Coleman

Appl. Phys. Lett. 57, 843 (1990); http://dx.doi.org/10.1063/1.103408 (3 pages) | Cited 9 times

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Data are presented on laser threshold current density and emission wavelength of strained‐layer InGaAs‐GaAs‐AlxGa1−xAs single quantum well lasers having confining layer aluminum compositions in the range 0.20≤x≤0.85. A decrease in threshold current density with increasing confining layer composition is related to the increased confinement factor of the waveguide structure. An increase in the laser emission wavelength is observed as a consequence of reduced bandfilling.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.45.+h Stimulated emission
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Photorefractivity at 1.5 μm in CdTe:V

Afshin Partovi, James Millerd, Elsa M. Garmire, Mehrdad Ziari, William H. Steier, Sudhir B. Trivedi, and Marvin B. Klein

Appl. Phys. Lett. 57, 846 (1990); http://dx.doi.org/10.1063/1.103409 (3 pages) | Cited 56 times

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We have for the first time demonstrated two‐beam coupling energy transfer at a wavelength of 1.5 μm. Beam coupling gain coefficients of 0.6 cm−1 have been obtained in vanadium ‐doped CdTe with only 5 mW/cm2 incident intensity. These gain coefficients exceed typical gain coefficients in GaAs at 1.06 μm wavelength by 50%. In preliminary measurements using the moving grating technique, we have measured a gain coefficient of 2.4 cm−1. Through adjustment of the doping level, CdTe:V can be used as a sensitive photorefractive material through the 0.9–1.5 μm spectral range.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Explanation of low‐frequency relative intensity noise in semiconductor lasers

C. B. Su, J. Schlafer, and R. B. Lauer

Appl. Phys. Lett. 57, 849 (1990); http://dx.doi.org/10.1063/1.103385 (3 pages) | Cited 10 times

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For the first time, the enhanced low‐frequency relative intensity noise characteristics of semiconductor lasers is explained. It is shown, by multimode rate equation analysis, that the enhanced low‐frequency noise is caused by coupling between longitudinal modes which can renormalize the resonance frequency of the individual modes to very low values. It is further shown that a single‐mode laser will also exhibit enhanced low‐frequency noise unless the side‐mode suppression is high.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

Analysis of a cascade‐pumped 16 μm CO2‐N2 downstream‐mixing gasdynamic laser

Purandar Chakravarty, N. M. Reddy, and K. P. J. Reddy

Appl. Phys. Lett. 57, 852 (1990); http://dx.doi.org/10.1063/1.103386 (3 pages) | Cited 3 times

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The generation of a 16 μm laser beam through cascading in a downstream‐mixing CO2 gasdynamic laser is studied. To simulate actual lasing action, a generalized, two‐dimensional, flow‐radiation‐coupled power extraction model for a gasdynamic laser is used. Also, to model the cascade process a new four‐mode CO2‐N2 vibrational kinetic model has been proposed. The steady‐state intensity obtained for an exclusive 9.4 μm transition is of the order of 5×107 W/m2. In the cascade mode of operation the steady‐state intensities for 9.4 and 16 μm transitions of the order of 5×107 W/m2 and 1.0×106 W/m2, respectively, have been obtained.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
34.10.+x General theories and models of atomic and molecular collisions and interactions (including statistical theories, transition state, stochastic and trajectory models, etc.)

Integrated‐optic polarization controller with unlimited transformation range

F. Heismann, M. D. Divino, and L. L. Buhl

Appl. Phys. Lett. 57, 855 (1990); http://dx.doi.org/10.1063/1.103387 (3 pages) | Cited 2 times

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We demonstrate a novel waveguide polarization controller that allows endless transformations from any varying general input polarization state into any varying general output state. The electro‐optic controller is implemented in lithium niobate and produces adjustable elliptical birefringence of constant total phase retardation via three independent drive voltages. We show that it allows fast and reset‐free automatic polarization control using an entirely analog feedback circuit that derives its error signal from the intensity in the prescribed output polarization.
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42.82.-m Integrated optics
42.79.Hp Optical processors, correlators, and modulators
42.79.Gn Optical waveguides and couplers
42.25.Ja Polarization

Self‐pumped and double phase conjugation in GaAs with applied dc electric field

P. L. Chua, D. T. H. Liu, and L. J. Cheng

Appl. Phys. Lett. 57, 858 (1990); http://dx.doi.org/10.1063/1.103388 (3 pages) | Cited 3 times

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Self‐pumped and double phase conjugation are first demonstrated in undoped GaAs with applied dc electric field at 1.06 μm wavelength. Phase‐conjugate reflectivities of up to 3% and 0.5% respectively, are obtained and other dependences are reported. Reported values of the self‐pumped phase‐conjugate reflectivity are compared with those of InP.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.-e Optical properties of bulk materials and thin films
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

H− production from a barium converter with different discharge configurations

C. F. A. van Os, K. N. Leung, and W. B. Kunkel

Appl. Phys. Lett. 57, 861 (1990); http://dx.doi.org/10.1063/1.103389 (3 pages) | Cited 4 times

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The production of H− ions at a barium converter immersed in a hydrogen plasma has been investigated experimentally for a pulsed discharge. It is found that the scaling of the negative ion output with incident positive ion current on the converter depends greatly on the actual geometry of the plasma generator. A less than linear scaling is observed in a multicusp system. A more than linear scaling is obtained in a configuration where the filament and the converter are separated by a permanent magnet filter.
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29.25.Lg Ion sources: polarized
29.25.Ni Ion sources: positive and negative
52.25.Jm Ionization of plasmas
52.50.Dg Plasma sources

Optical technique for the measurement of turbulent spectra using the photorefractive properties of BaTiO3

G. F. Albrecht, H. F. Robey, and T. R. Moore

Appl. Phys. Lett. 57, 864 (1990); http://dx.doi.org/10.1063/1.104263 (3 pages) | Cited 1 time

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An optical technique for obtaining two‐dimensional spectra of turbulent flows is presented. A coherent beam is passed through a turbulent flow and acquires phase perturbations which are related to the density field of the flow. This phase‐modulated beam is focused to obtain the Fourier transform of the incoherent, fluctuating portion of the field. The coherent portion of the field is removed by exploiting the photorefractive properties of BaTiO3 as a temporal filter. The technique is an improvement over existing methods in that it is nonintrusive, has a wide dynamic range, and requires no assumption of isotropy of the turbulence.
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42.79.Mt Schlieren devices
47.80.-v Instrumentation and measurement methods in fluid dynamics
47.27.Gs Isotropic turbulence; homogeneous turbulence

Scanning tunneling microscopy on rough surfaces: Deconvolution of constant current images

G. Reiss, F. Schneider, J. Vancea, and H. Hoffmann

Appl. Phys. Lett. 57, 867 (1990); http://dx.doi.org/10.1063/1.103390 (3 pages) | Cited 43 times

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This letter critically discusses the topographical information obtained by scanning tunneling microscopy (STM) on surfaces with a mesoscopic roughness, i.e., in the range of some nm’s. In a foregoing publication [J. Appl. Phys. 67, 1156 (1990)], we already treated the evaluation of constant current images based on the knowledge of the real surface and the shape of the tunneling tip (‘‘tip shape limited resolution’’). Now we deal with the invers problem: the reconstruction of the real surface topography based on the corresponding STM image and the tip shape, using a simple, straightforward formalism.
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07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
68.35.B- Structure of clean surfaces (and surface reconstruction)
07.78.+s Electron, positron, and ion microscopes; electron diffractometers
42.30.Wb Image reconstruction; tomography

Deep energy levels of substitutional impurity pairs in the wurtzite semiconductor ZnS

Xiaojiang Wu, Mingzhu Huang, and Shang Yuan Ren

Appl. Phys. Lett. 57, 870 (1990); http://dx.doi.org/10.1063/1.103391 (2 pages)

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Employing the on‐site tight‐binding Koster–Slater Green’s function method, the deep energy levels of two series of paired substitutional sp3‐bonded impurities in the II‐VI wurtzite semiconductor ZnS are presented. The chemical trends in the deep levels, as the spectator impurity varies, are predicted.
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71.55.Gs II-VI semiconductors

Selective epitaxial growth with oxide‐polycrystalline silicon‐oxide masks by rapid thermal processing chemical vapor deposition

T. Y. Hsieh, K. H. Jung, D. L. Kwong, and D. B. Spratt

Appl. Phys. Lett. 57, 872 (1990); http://dx.doi.org/10.1063/1.103392 (3 pages) | Cited 4 times

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We have used rapid thermal processing chemical vapor deposition for Si selective epitaxial growth using a mask consisting of a sandwich structure of SiO2 on doped polycrystalline Si on SiO2. Lateral polycrystalline Si growth from the sidewalls of the polycrystalline Si layer was also observed and resulted in polycrystalline ‘‘bumps’’ along the mask sidewalls. Otherwise, the epitaxial Si layer was defect‐free.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
85.40.Hp Lithography, masks and pattern transfer

Single‐crystal Sn/Ge superlattices on Ge substrates: Growth and structural properties

W. Wegscheider, K. Eberl, U. Menczigar, and G. Abstreiter

Appl. Phys. Lett. 57, 875 (1990); http://dx.doi.org/10.1063/1.104264 (3 pages) | Cited 31 times

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Short‐period strained‐layer α‐Sn/Ge superlattices lattice matched to Ge(001) substrates have been synthesized for the first time. The thin, tetragonally distorted α‐Sn layers are stabilized by a modified molecular beam epitaxy technique with large modulation of substrate temperature during growth. Optimization of growth conditions is achieved via in situ Auger electron spectroscopy and low‐energy electron diffraction. This new kind of strained‐layer superlattice is characterized by transmission electron microscopy, x‐ray diffraction, and Raman scattering. Distinct superlattice effects are observed in the structural and phonon properties of the samples.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Cathodoluminescence observation of extended monolayer‐flat terraces at the heterointerface of GaInAs/InP single quantum wells grown by metalorganic vapor phase epitaxy

S. Nilsson, A. Gustafsson, and L. Samuelson

Appl. Phys. Lett. 57, 878 (1990); http://dx.doi.org/10.1063/1.103393 (3 pages) | Cited 12 times

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High quality, GaInAs, single quantum wells lattice matched to InP barriers, have been grown by metalorganic vapor phase epitaxy at reduced pressures and with the application of short growth interruptions at both heterointerfaces. The occurrence of multiple peaks in the 25 K cathodoluminescence spectrum of a sample containing nominally two single quantum wells is caused by terraces differing by one monolayer in thickness, ≊ 2.93 Å, in the same quantum well. For their observation as well defined excitonic emission peaks, the terraces must be larger in lateral extent than the free exciton Bohr diameter, namely, ≊ 350 Å. This number sets the lower boundary of the size of the terraces. Cathodoluminescence images were formed for the individual emission peaks and the contrast fluctuations observed with a lateral extent up to ≊ 2 μm give the upper boundary for the extended monolayer‐flat terraces. So far this is the first direct observation of such large growth islands at the heterointerface of the GaInAs/InP system.
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78.60.Hk Cathodoluminescence, ionoluminescence
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.35.B- Structure of clean surfaces (and surface reconstruction)

Growth characteristics of silicon dioxide produced by rapid thermal oxidation processes

Y. L. Chiou, C. H. Sow, G. Li, and K. A. Ports

Appl. Phys. Lett. 57, 881 (1990); http://dx.doi.org/10.1063/1.104265 (3 pages) | Cited 7 times

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Silicon dioxide growth curves produced by a rapid thermal processor were analyzed. No break point was observed in the growth curves. Of the kinematical models being compared, the linear‐parabolic equation gave the best fit. However, the coefficients of the equation are thickness dependent as in the case of diffusion furnace oxide growth data. The correlation in the growth curves indicated similar oxide growth kinematics for the two types of oxidation equipment. Under certain oxidation conditions, the coefficient of the linear term may have a negative value and appears to be determined by the oxidation temperature and oxygen flow rate.
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81.65.-b Surface treatments
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Photoconductivity of chemically deposited CdS:Y films

S. Bhushan and S. K. Sharma

Appl. Phys. Lett. 57, 884 (1990); http://dx.doi.org/10.1063/1.104093 (3 pages) | Cited 9 times

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Photoconductive CdS:Y films prepared by chemical bath technique show photocurrent to dark current ratios of the order of 105. From scanning electron micrographs, a combination of crystalline and noncrystalline growths are inferred. In the presence of Y a maximum transmission of the order of 60% is found. Traps at depths 0.68 and 0.72 eV are found effective.
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73.50.Pz Photoconduction and photovoltaic effects
72.80.Ey III-V and II-VI semiconductors
73.61.Ey III-V semiconductors
72.40.+w Photoconduction and photovoltaic effects

Hydrogenation of GaAs‐on‐InP

U. K. Chakrabarti, S. J. Pearton, W. S. Hobson, J. Lopata, and V. Swaminathan

Appl. Phys. Lett. 57, 887 (1990); http://dx.doi.org/10.1063/1.103394 (3 pages) | Cited 15 times

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Incorporation of atomic hydrogen into heteroepitaxial Si‐doped GaAs layers grown directly on InP substrates by organometallic vapor phase epitaxy produces substantial increases in the reverse bias breakdown voltage of TiPtAu Schottky diodes fabricated on the GaAs‐on‐InP. Plasma hydrogenated diodes annealed at 400 °C to restore the electrical activity of the passivated shallow donors have reverse breakdown voltages (VB) of ∼6.5 V compared to 4.5 V for untreated samples. The increases in VB are stable to 500 °C annealing for 5 min. Atomic profiling of deuterated samples showed substantial outdiffusion of deuterium from the GaAs at 600 °C, with increasing accumulation at the heterointerface. The deuterium in this disordered region after 600 °C annealing is in a relatively immobile, electrically inactive state.
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85.40.Ls Metallization, contacts, interconnects; device isolation
73.61.Ey III-V semiconductors
72.80.Ey III-V and II-VI semiconductors
66.30.J- Diffusion of impurities

Behavior of high dose O+‐implanted Si/Ge/Si structures

J. P. Zhang, Y. S. Tang, A. K. Robinson, U. Bussmann, P. L. F. Hemment, B. J. Sealy, S. M. Newstead, A. R. Powell, T. E. Whall, and E. H. C. Parker

Appl. Phys. Lett. 57, 890 (1990); http://dx.doi.org/10.1063/1.103395 (3 pages) | Cited 2 times

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The synthesis of a buried oxide layer in multilayer Si/Ge/Si structures by the implantation of high doses of 200 keV O+ ions is studied by Rutherford backscattering analysis. The presence of Ge is found to have a minimal effect upon the mass transport of excess oxygen and interstitial silicon. Infrared transmission spectroscopy and x‐ray photoelectron spectroscopy confirm that the oxygen atoms bond preferentially to silicon forming silicon dioxide and SiOx, where x<2, with no evidence for Ge—O bonding.
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73.40.Vz Semiconductor-metal-semiconductor structures
73.40.Ns Metal-nonmetal contacts
61.72.uf Ge and Si
85.40.Hp Lithography, masks and pattern transfer

Low‐temperature silicon cleaning via hydrogen passivation and conditions for epitaxy

S. S. Iyer, M. Arienzo, and E. de Frésart

Appl. Phys. Lett. 57, 893 (1990); http://dx.doi.org/10.1063/1.103396 (3 pages) | Cited 43 times

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In low‐temperature epitaxial Si deposition methods such as molecular beam epitaxy (MBE), pre‐epitaxial substrate preparation usually incorporates a high temperature (≳800 °C) step. Elimination of this step is essential to wider applicability of these epitaxial methods. We show that Si(100) wafers exposed to HF vapors in a laboratory ambience are bulk terminated and that such termination is stable in air for several tens of minutes, and in vacuum for several hours. It is possible to obtain good epitaxy, as determined by surface diffraction and transistor characteristics, provided epitaxy is commenced on these bulk‐terminated surfaces. We also give evidence that under certain conditions, bulk‐terminated surfaces are maintained in low‐temperature epitaxy using the method of ultrahigh vacuum chemical vapor deposition.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.35.B- Structure of clean surfaces (and surface reconstruction)

MeV oxygen ion implantation induced compositional intermixing in AlAs/GaAs superlattices

Fulin Xiong, T. A. Tombrello, C. L. Schwartz, and S. A. Schwarz

Appl. Phys. Lett. 57, 896 (1990); http://dx.doi.org/10.1063/1.103397 (3 pages) | Cited 5 times

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We present in this letter an investigation of compositional intermixing in AlAs/GaAs superlattices induced by 2 MeV oxygen ion implantation. The results are compared with implantation at 500 keV. In addition to Al intermixing in the direct lattice damage region by nuclear collision spikes, as is normally present in low‐energy ion implantation, Al interdiffusion has also been found to take place in the subsurface region where MeV ion induced electronic spike damage dominates and a uniform strain field builds up due to defect generation and diffusion. Uniform compositional intermixing of the superlattices results after subsequent thermal annealing when Al interdiffusion is stimulated through recovery of the implantation‐induced lattice strain field, the reconstruction and the redistribution of lattice defects, and annealing of lattice damage.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.72.U- Doping and impurity implantation
61.80.Jh Ion radiation effects

Effect of spacer layer thickness on the static characteristics of resonant tunneling diodes

I. Mehdi, R. K. Mains, and G. I. Haddad

Appl. Phys. Lett. 57, 899 (1990); http://dx.doi.org/10.1063/1.103398 (3 pages) | Cited 7 times

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A self‐consistent quantum mechanical simulation is used to study the effect of spacer layer thickness on such resonant tunneling diode properties as the peak current and peak‐to‐valley current ratio. It is found that with a low cathode doping the peak current is insensitive to the commonly used spacer layer thickness. However, for higher cathode doping the peak current decreases with increasing spacer layer thickness. This phenomenon is explained on the basis of the junction potential between the heavily doped cathode contact region and the undoped double‐barrier region. Thus, for device applications where a high current density is desired the cathode spacer layer should be designed as thin as possible.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Gk Tunneling
03.65.Db Functional analytical methods

Location of energy levels of oxygen‐vacancy complex in GaAs

M. Skowronski, S. T. Neild, and R. E. Kremer

Appl. Phys. Lett. 57, 902 (1990); http://dx.doi.org/10.1063/1.103399 (3 pages) | Cited 37 times

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Experimental results of photoexcitation and thermal deactivation of localized vibrational mode absorption of the oxygen‐vacancy complex in GaAs are reported. Two levels within the energy gap are observed, one located at 0.14 eV and the other between 0.57 eV and 0.75 eV below the conduction‐band minimum. It is proposed that this center exhibits a negative U property with the second electron ionization energy higher than that of the first electron.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
78.30.Fs III-V and II-VI semiconductors
71.55.Eq III-V semiconductors

InAs‐AlSb heterostructure field‐effect transistors fabricated using argon implantation for device isolation

James Werking, Gary Tuttle, Chanh Nguyen, Evelyn L. Hu, and Herbert Kroemer

Appl. Phys. Lett. 57, 905 (1990); http://dx.doi.org/10.1063/1.103400 (3 pages) | Cited 11 times

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We have fabricated planar heterostructure field‐effect transistors with InAs quantum well channels and AlSb barrier layers. Argon implantation was used to form a damaged layer, which resulted in partial device to device isolation. A 1.5 μm gate device had a room‐temperature extrinsic transconductance of 208 mS/mm.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Tv Field effect devices

Effect of low‐level boron doping and its implication to the nature of gap states in hydrogenated amorphous silicon

Liyou Yang, A. Catalano, R. R. Arya, and I. Balberg

Appl. Phys. Lett. 57, 908 (1990); http://dx.doi.org/10.1063/1.103401 (3 pages) | Cited 22 times

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Large simultaneous changes in ambipolar diffusion length (Ld) and photoconductivity (σph) were observed with boron doping below 1 ppm. The results can be explained satisfactorily by postulating that electrons and holes interchange their roles as majority or minority carriers at ∼0.4 ppm. The μτ products for both carriers are determined as a function of doping. The light intensity dependences of Ld and σph present new evidence for the existence of the hole trapping centers in a‐Si:H and show that doping enhances the sensitizing effect due to these centers.
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73.50.Fq High-field and nonlinear effects
73.50.Pz Photoconduction and photovoltaic effects
73.20.Hb Impurity and defect levels; energy states of adsorbed species
72.80.Ng Disordered solids

Silicon implantation into GaAs: Observations of dose rate dependent electrical activation and damage

F. G. Moore, H. B. Dietrich, E. A. Dobisz, and O. W. Holland

Appl. Phys. Lett. 57, 911 (1990); http://dx.doi.org/10.1063/1.103402 (3 pages) | Cited 22 times

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The electrical activation of ion‐implanted silicon in GaAs has been studied as a function of dose rate (i.e., ion‐current density). For a fluence of 1014 cm−2, the Hall sheet carrier activation is shown to depend strongly on the dose rate at which the implant was carried out. Carrier concentrations of 7×1018 cm−3 were produced at a 50×10−9 A/cm2 ion‐current density. The variation in electrical activation is believed to be the result of a dose rate dependence of the ion‐induced damage of GaAs which can be clearly seen in Rutherford backscattering (RBS) channeling measurements of 1015 cm−2 implants.
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61.80.Jh Ion radiation effects
61.72.U- Doping and impurity implantation
85.40.Hp Lithography, masks and pattern transfer

Growth of GaAs quantum wire arrays by organometallic chemical vapor deposition on submicron gratings

E. Colas, S. Simhony, E. Kapon, R. Bhat, D. M. Hwang, and P. S. D. Lin

Appl. Phys. Lett. 57, 914 (1990); http://dx.doi.org/10.1063/1.103384 (3 pages) | Cited 22 times

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We report on the growth of dense lateral arrays of GaAs quantum wire structures, obtained by organometallic chemical vapor deposition (OMCVD) on GaAs substrates where a submicron grating has been lithographically defined and etched prior to deposition. The experiments were performed simultaneously on (100) oriented substrates, where the wires are virtually ‘‘isolated’’ from each other, and on substrates that are vicinal with respect to the (100) orientation, where the wires are ‘‘smoothly connected’’ by quantum wells. Transmission electron microscopy investigations allowed the study of the morphology of the resulting structures, which was related to the microscopic step nature of the starting surfaces and revealed important basic aspects of growth dynamics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.40.Hp Lithography, masks and pattern transfer
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
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