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18 Mar 1991

Volume 58, Issue 11, pp. 1119-1219

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Observations of ultrafast nonlinear refraction in an InGaAsP optical amplifier

R. S. Grant and W. Sibbett

Appl. Phys. Lett. 58, 1119 (1991); http://dx.doi.org/10.1063/1.104389 (3 pages) | Cited 36 times

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Spectral broadening due to self‐phase modulation has been observed for ultrashort pulses propagating through an InGaAsP optical amplifier. This is not associated with gain saturation or absorption saturation, since it can be observed at the transparency current. At transparency, the broadening and structure of the spectra are symmetrical for pulses of approximately 27 ps duration, implying that the underlying nonlinearity has a relatively fast recovery time. The associated nonlinear index coefficient n2 is estimated to be approximately −2×10−11 cm2 W−1.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

InGaAs‐GaAs quantum well vertical‐cavity surface‐emitting laser using molecular beam epitaxial regrowth

C. Lei, T. J. Rogers, D. G. Deppe, and B. G. Streetman

Appl. Phys. Lett. 58, 1122 (1991); http://dx.doi.org/10.1063/1.104390 (3 pages) | Cited 10 times

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Data are presented demonstrating a design and fabrication process for the realization of high‐efficiency, low‐threshold vertical‐cavity InGaAs‐GaAs quantum well lasers with light emission through the top (epitaxial) surface. Crystal growth is performed using a two‐step molecular beam epitaxial growth process to utilize lateral current injection into the device active region. The device structure allows the top surface (emission side) reflector to be optimized (for either high efficiency or low threshold) after crystal growth through the deposition of electron beam evaporated dielectric layers. Maximum continuous‐wave output power in excess of 1.2 mW at 300 K, and differential quantum efficiency greater than 25% (3.9 mA threshold) are demonstrated. Low‐threshold values of 2.3 mA are measured on devices with increased mirror reflectivity (through the addition of dielectric layers).
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems

Temperature dependence of threshold of strained quantum well lasers

N. K. Dutta, J. Lopata, D. L. Sivco, and A. Y. Cho

Appl. Phys. Lett. 58, 1125 (1991); http://dx.doi.org/10.1063/1.104391 (3 pages) | Cited 17 times

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The temperature dependence of threshold current of strained quantum well lasers is analyzed both experimentally and theoretically. The measurements are performed on ridge waveguide In0.2Ga0.8As/GaAs multiquantum well lasers emitting near 1 μm. The carrier densities at threshold of these lasers are measured using very short current pulse injection. A simplified calculation of the radiative, nonradiative recombination rates and the relationship between gain and carrier density in strained quantum well lasers is described. The results of the calculation are compared with experimental results.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Third‐harmonic generation measurement of nonlinearities in SiO2‐TiO2 sol‐gel films

W. E. Torruellas, L. A. Weller‐Brophy, R. Zanoni, G. I. Stegeman, Z. Osborne , and B. J. J. Zelinski

Appl. Phys. Lett. 58, 1128 (1991); http://dx.doi.org/10.1063/1.104392 (3 pages) | Cited 8 times

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Third‐harmonic generation has been used to measure the magnitude and phase of the nonlinear susceptibility χ(3)(3ω) of SiO2‐TiO2 sol‐gel thin films as a function of TiO2 concentration. Nonlinearities 20 times larger than those of fused silica were found, making such films useful for nonlinear optics in glass waveguides.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.-e Optical properties of bulk materials and thin films
42.70.-a Optical materials
78.66.-w Optical properties of specific thin films

Large stable photoinduced refractive index change in a nonlinear optical polyester polymer with disperse red side groups

Yongqiang Shi, William H. Steier, Luping Yu, Mai Chen, and Larry R. Dalton

Appl. Phys. Lett. 58, 1131 (1991); http://dx.doi.org/10.1063/1.104393 (3 pages) | Cited 61 times

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The photoinduced refractive index change of polyester with disperse red side groups was studied at several different wavelengths. This material exhibits a large photoinduced index change (0.3 at 633 nm) and in addition when poled has a sizable second‐order nonlinear optical effect. This index change was monitored over 1000 h and long‐term stability was demonstrated. Based on these results, a method using only photomasks to define channel waveguides and other patterns in such polymers was suggested and experimentally demonstrated. This photoinduced index change may have wide applications in integrated optical systems when these or other similar polymers are involved.
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78.66.Qn Polymers; organic compounds
42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Poling of polymeric thin films at ambient temperatures for second‐harmonic generation

Stephen E. Barry and David S. Soane

Appl. Phys. Lett. 58, 1134 (1991); http://dx.doi.org/10.1063/1.104394 (3 pages) | Cited 10 times

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Carbon dioxide is used in induce glass transition in amorphous polymer films, allowing efficient alignment of chromophores with an applied electric field. The noncentrosymmetric films thus produced are capable of second‐harmonic generation. This method has advantages over previously investigated poling schemes, including poling at ambient temperatures and use of high glass transition temperature polymers.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.66.Qn Polymers; organic compounds
78.20.Jq Electro-optical effects

Phase conjugation in amorphous germanium diselenide thin films

M. Fernández Guasti, E. Haro Poniatowski, and S. Camacho López

Appl. Phys. Lett. 58, 1137 (1991); http://dx.doi.org/10.1063/1.104395 (3 pages)

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We report a phase conjugate mirror (PCM) using germanium diselenide amorphous thin films with a 25 mW He Ne laser. The size of the PCM area can be made very large as opposed to the size limitations of crystal PCMs. The induced hologram may be recorded temporarily or permanently depending on the incident light parameters. The main drawback of this system is the long exposure time, of the order of minutes, required to generate the phase conjugate signal. The modulation of the refractive index is suggested to be due to a photostructural reorientation.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.40.Ht Hologram recording and readout methods

High‐power tunable operation of AlGaAs/GaAs quantum well lasers in an external grating cavity

P. Gavrilovic, V. B. Smirnitskii, J. Bisberg, and M. O’Neill

Appl. Phys. Lett. 58, 1140 (1991); http://dx.doi.org/10.1063/1.104396 (3 pages) | Cited 11 times

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Data are presented on operation of 100 μm aperture gain‐guided single quantum well laser diodes in an external grating cavity. A maximum power of 550 mW is coupled out of the cavity with an efficiency of 0.51 W/A. The laser emission has a linewidth of ≲1 Å and is tunable from 7950 to 8450 Å for the specific laser diodes used in this study. The output beam is collimated in the direction perpendicular to the p‐n junction, and exhibits a divergence of 0.4° parallel to the p‐n junction.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking
42.60.By Design of specific laser systems

GaAs‐oxide removal using an electron cyclotron resonance hydrogen plasma

Z. Lu, M. T. Schmidt, D. Chen, R. M. Osgood, W. M. Holber, D. V. Podlesnik, and J. Forster

Appl. Phys. Lett. 58, 1143 (1991); http://dx.doi.org/10.1063/1.104397 (3 pages) | Cited 28 times

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See Also: Erratum

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The surface chemistry of GaAs‐oxide removal with an electron cyclotron resonance (ECR) hydrogen plasma has been investigated with x‐ray photoelectron spectroscopy. It is found that As oxide is efficiently removed at room temperature, and heating expedites the removal of Ga oxide. Band bending changes during ECR hydrogen‐plasma oxide reduction are also discussed.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.65.-b Surface treatments
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
82.30.Hk Chemical exchanges (substitution, atom transfer, abstraction, disproportionation, and group exchange)

Up‐conversion of red light to green by a new type of light transducer using organic electroluminescent diode combined with photoresponsive amorphous silicon carbide

Masahiro Hiramoto, Kanji Yoshimura, Tomoya Miyao, and Masaaki Yokoyama

Appl. Phys. Lett. 58, 1146 (1991); http://dx.doi.org/10.1063/1.104398 (3 pages) | Cited 14 times

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Light up‐conversion from red to green was performed in a new type of light transducer composed of an organic electroluminescent diode and a photoresponsive amorphous silicon carbide (a‐SiC:H) film as an electron photoinjecting electrode. Quantum efficiency of photon conversion reached 1% with the assistance of newly observed photocurrent multiplication in a‐SiC:H film.
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78.66.Sq Composite materials
85.60.Dw Photodiodes; phototransistors; photoresistors
85.60.-q Optoelectronic devices

Direct detection of microdefects in beta barium metaborate bulk crystals by light scattering tomograph

Jianguo Hou, Qiguang Tan, Qinnan Zhao, Baichang Wu, and Chuangtian Chen

Appl. Phys. Lett. 58, 1149 (1991); http://dx.doi.org/10.1063/1.104347 (3 pages)

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A second‐harmonic generation of a Q‐switched Nd:YAG laser at λ=530 nm was focused into the polished beta barium metaborate crystals, and the scattering light was collected by a motor‐driven camera at 90° direction. This arrangement allows direct and nondestructive detection of microdefects in bulk crystals. Dislocation lines decorated by impurity atoms could be seen by a laser beam illuminating with the power intensity of about 0.5 MW/cm2, while microinclusions of about 1–5 μm in size could be observed with much lower laser intensity.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Redistribution of Sb in an atomic‐layer‐doped Si

S. Fukatsu, S. Kubo, Y. Shiraki, and R. Ito

Appl. Phys. Lett. 58, 1152 (1991); http://dx.doi.org/10.1063/1.104348 (3 pages) | Cited 5 times

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We investigated the redistribution of an atomic‐layer‐doped (ALD) Sb in Si upon post‐growth annealing using secondary‐ion mass spectrometry (SIMS). Shoulder development in the SIMS profile was observed after annealing over 710 °C, suggesting the presence of two different diffusion mechanisms. Diffusivities were found to be in excess of the bulk diffusivity and were concentration dependent above n(Sb)≊5×1017 cm−3. Asymmetric diffusion of ALD Sb in the epitaxial layers and Sb segregation at the oxide interface were also observed.
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61.72.uf Ge and Si
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
66.30.J- Diffusion of impurities

Fiber fragmentation in a single‐filament composite

W. A. Curtin

Appl. Phys. Lett. 58, 1155 (1991); http://dx.doi.org/10.1063/1.104349 (3 pages) | Cited 6 times

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The fiber fragment distribution obtained from tensile testing of a single‐filament composite contains vital information on the in situ strength of the fiber at short gauge lengths and on the shear stress across the fiber/matrix interface. Here, this fragmentation problem is mapped onto the problem of hard rods distributed randomly along a one‐dimensional line, but with a stress‐dependent rod length, and is then solved exactly. The solution utilizes the ‘‘car‐parking’’ problem of equal sized cars parked along a line and the theory predictions agree well with existing simulation results. The theory also applies to multiple cracking of brittle films on pliable substrates, film coatings on fibers, and matrix cracking in ceramic matrix composites, and now allows the in situ fiber or film statistical strength and interfacial shear strength to be derived from experimental fragment distributions.
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62.20.M- Structural failure of materials
46.50.+a Fracture mechanics, fatigue and cracks
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure

In‐based p ohmic contacts to the base layer of AlGaAs/GaAs heterojunction bipolar transistor

F. Ren, S. J. Pearton, W. S. Hobson, T. R. Fullowan, A. B. Emerson, and D. M. Schleich

Appl. Phys. Lett. 58, 1158 (1991); http://dx.doi.org/10.1063/1.104350 (3 pages) | Cited 4 times

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A reliable p ohmic contact for AlGaAs/GaAs heterojunction bipolar transistor (HBT) using AuBe‐In/Ag/Au is presented. Excellent morphology after annealing at 400 °C for 20 s was observed and a transfer resistance of 0.095 Ω mm obtained on p+‐GaAs (1×1019 cm−3). Silver acts as a diffusion barrier to prevent Au spikes which will degrade the performance of the thin base layer HBT. The indium layer is highly desirable to reduce the contact resistance by forming the InGaAs phase at metal‐GaAs interfaces. Beryllium is the p‐type dopant and a top gold layer is used to lower the sheet resistance of the contact metals. The mode of current transport is dominant by tunneling through the barrier due to field emission in the heavily doped materials.
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73.40.Cg Contact resistance, contact potential
85.30.Pq Bipolar transistors

Lead zirconate titanate films by rapid thermal processing

C. V. R. Vasant Kumar, M. Sayer, R. Pascual, D. T. Amm, Z. Wu, and D. M. Swanston

Appl. Phys. Lett. 58, 1161 (1991); http://dx.doi.org/10.1063/1.104351 (3 pages) | Cited 40 times

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Lead zirconate titanate films have been fabricated by a dc sputtering technique with a post deposition rapid thermal annealing treatment at 650 °C for 10 s. The films exhibited good structural, dielectric, and ferroelectric properties compared to conventional furnace‐annealed films. The measured dielectric constant and loss tangent at 1 kHz were 900 and 0.04 and the remanent polarization and coercive field values were 10 μC/cm2 and 23 kV/cm, respectively. No significant fatigue in polarization was observed in the films up to 1010 cycles of bipolar stress. The films were optically transparent and showed a linear electro‐optic (EO) effect after poling with an EO coefficient of 1.5×10 −11 m/V.
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77.55.-g Dielectric thin films
77.80.B- Phase transitions and Curie point
73.61.Ng Insulators
81.15.Cd Deposition by sputtering

Electroluminescence and impact ionization phenomena in a double‐barrier resonant tunneling structure

C. R. H. White, M. S. Skolnick, L. Eaves, and M. L. Leadbeater

Appl. Phys. Lett. 58, 1164 (1991); http://dx.doi.org/10.1063/1.104352 (3 pages) | Cited 15 times

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Electroluminescence (EL) due to impact ionization in the high field region of a double‐barrier resonant tunneling structure is reported. Knowledge of the charge distribution in the structure enables a detailed analysis to be made of the impact ionization rate as a function of electric field. Large peak‐to‐valley ratios of 15:1 in the EL emission intensity from the quantum well active region are observed.
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78.60.Fi Electroluminescence
73.40.Gk Tunneling
78.20.Jq Electro-optical effects
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Evidence for the passivation effect in (NH4)2Sx‐treated GaAs observed by slow positrons

Jong‐Lam Lee, Long Wei, Shoichiro Tanigawa, Haruhiro Oigawa, and Yasuo Nannichi

Appl. Phys. Lett. 58, 1167 (1991); http://dx.doi.org/10.1063/1.104353 (3 pages) | Cited 24 times

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We applied slow positrons to the as‐etched GaAs and/or the (NH4)2Sx‐treated GaAs. The results show that a thin oxide film is easily formed on the surface of as‐etched GaAs as soon as the etched surface is exposed to air for several minutes before the measurement. On the other hand, the monolayer of chemisorbed sulfur atoms in the (NH4)2 Sx‐treated GaAs is effective in protecting the clean surface from the adsorption of oxygen atoms. The mean diffusion length of positrons is not affected by the conditions of the surface treatment. This implies that the centers for the trapping of a positron are not created below the free surface by those treatments.
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85.40.Ls Metallization, contacts, interconnects; device isolation
73.30.+y Surface double layers, Schottky barriers, and work functions
78.30.Fs III-V and II-VI semiconductors
81.65.-b Surface treatments

Initial stage of epitaxial growth at the high temperature of GaAs and AlGaAs on Si by metalorganic chemical vapor deposition

T. Soga, T. George, T. Jimbo, M. Umeno, and E. R. Weber

Appl. Phys. Lett. 58, 1170 (1991); http://dx.doi.org/10.1063/1.104354 (3 pages) | Cited 6 times

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GaAs and AlGaAs grown directly on Si were characterized by transmission electron microscopy. Both GaAs and AlGaAs grow three‐dimensionally on Si at 750 °C. The spacing between GaAs islands is large, while the AlGaAs islands appear to be contiguous for a nominal thickness of 22.5 nm. There is a high density of dislocations, stacking faults, and microtwins in the thin GaAs layer, but drastic reduction of such defects was observed in the planar AlGaAs nucleation layer.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
61.72.Bb Theories and models of crystal defects
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Electromigration in p‐type ZnSe:Li

M. A. Haase, J. M. DePuydt, H. Cheng, and J. E. Potts

Appl. Phys. Lett. 58, 1173 (1991); http://dx.doi.org/10.1063/1.104355 (2 pages) | Cited 17 times

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Electromigration has been observed in certain Li‐doped p‐type ZnSe epitaxial layers. A correlation is observed between the magnitude of the electromigration and the degree of compensation in the layers, which is consistent with electromigration of Li interstitials. Significantly, uncompensated layers show no electromigration, illustrating that Li atoms on Zn lattice sites (acceptors) are stable at room temperature. The effects of electromigration on the behavior of ZnSe blue light‐emitting diodes is considered, and shown to be beneficial in devices with compensated p‐type layers.
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66.30.J- Diffusion of impurities
85.60.Jb Light-emitting devices
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.61.Ga II-VI semiconductors

Experimental measurement of bulk and edge generation in Al0.4Ga0.6As PiN structures

P. G. Neudeck, J. A. Cooper, and M. R. Melloch

Appl. Phys. Lett. 58, 1175 (1991); http://dx.doi.org/10.1063/1.104356 (3 pages)

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A study of reverse‐bias leakage due to thermal generation in Al0.4Ga0.6As PiN junctions was conducted using the charge recovery transient technique on PiNiP storage capacitors. The relative importance of bulk generation and generation at the etched device periphery is documented, and the temperature dependence of both leakage mechanisms is presented. The experimental data suggest that the majority of bulk generation occurs at centers energetically near the middle of the band gap. In contrast, the temperature performance of the perimeter generation rate suggests that it is governed by surface states whose energy is 0.5 eV above or below midgap.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Ey III-V semiconductors
85.30.De Semiconductor-device characterization, design, and modeling
84.32.Tt Capacitors

Laser surface seeding for via plug filling

N. Zhu, T. Cacouris, R. Scarmozzino, and R. M. Osgood

Appl. Phys. Lett. 58, 1178 (1991); http://dx.doi.org/10.1063/1.104357 (3 pages) | Cited 4 times

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In this letter we report on a novel technique for metallizing contact holes and via plugs which is based on laser‐surface‐seeded selective chemical vapor deposition (LSS/CVD) of aluminum from dimethylaluminum‐hydride (DMAlH). In this metallization process, a laser is used to photolytically deposit a thin layer of metal, which provides a seed layer for subsequent selective CVD. In this work we apply the LSS/CVD technique to via hole filling, and demonstrate that small‐diameter (0.7 μm), high‐aspect‐ratio (3:1) aluminum plugs can be formed without the incorporation of voids. The morphology of the plug metal is very good, and the resistivity of aluminum deposited with this technique can be as low as twice that of the bulk metal.
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85.40.Hp Lithography, masks and pattern transfer
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.35.Fx Diffusion; interface formation

Global planarization of spun‐on thin films by reflow

David E. Bornside, Robert A. Brown, Sanjiv Mittal, and Franz T. Geyling

Appl. Phys. Lett. 58, 1181 (1991); http://dx.doi.org/10.1063/1.104358 (3 pages) | Cited 3 times

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The leveling of a thin‐liquid film on a substrate having a mesa‐like feature is analyzed by finite element analysis and lubrication theory applied to the free‐surface viscous flow problem. The height of the mesa is on the order of 1 μm and has a width on the order of 100 μm; the thin‐liquid film is initially conformal to the substrate and has a thickness on the order of 1 μm. Capillarity is found to be the primary driving force for flow. The predicted leveling times from the numerical simulations compare favorably with an analytical solution developed from lubrication theory for the leveling of a thin film on a smooth substrate.
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85.40.Hp Lithography, masks and pattern transfer
81.40.Pq Friction, lubrication, and wear
68.03.-g Gas-liquid and vacuum-liquid interfaces
47.10.-g General theory in fluid dynamics

Strain‐induced nonlinear energy‐band splitting of Si1−xGex alloys coherently grown on (111) and (110) oriented Ge substrates

Q. M. Ma and K. L. Wang

Appl. Phys. Lett. 58, 1184 (1991); http://dx.doi.org/10.1063/1.104359 (3 pages) | Cited 2 times

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A multi‐band semi‐empirical tight‐binding method was used to calculate the band structures of Si1−xGex alloys coherently grown on (111) and (110) oriented Si1−yGey substrates. The results show that the lowest conduction band X5 at point X in the [001] directions of the Si1−xGex alloy is split into two bands with even and odd parities, due to the reduction of symmetry by strain. This is the first calculation that shows a kind of nonlinear band‐edge splitting in the coherently grown Si1−xGex alloys. The results here can be approximated by adding a new deformation potential Ξ′u to the linear deformation potential formula, which was used earlier for bulk Si under external [111] and [110] uniaxial stress cases. For coherently grown layers with a large lattice mismatch, the nonlinear splittings should not be neglected when analyzing the electronic properties.
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71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
81.40.Rs Electrical and magnetic properties related to treatment conditions

Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen

M. de Keijser and C. van Opdorp

Appl. Phys. Lett. 58, 1187 (1991); http://dx.doi.org/10.1063/1.104360 (3 pages) | Cited 4 times

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Monolayer atomic layer epitaxy of GaAs has been achieved between 430 and 500 °C by using alternating pulses of AsH3, Ga(CH3)3, and atomic hydrogen. Maintaining the susceptor temperature below 500 °C suppresses the unfavorable thermal decomposition of Ga(CH3)3 to Ga in the gas phase. The basic point of our growth method is that, notwithstanding these low temperatures, sufficiently fast surface kinetics for growth are maintained by activation with the atomic hydrogen pulses.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Formation of highly n‐doped gallium arsenide layers by rapid thermal oxidation followed by rapid thermal annealing of silicon‐capped gallium arsenide

D. K. Sadana, J. P. de Souza, and F. Cardone

Appl. Phys. Lett. 58, 1190 (1991); http://dx.doi.org/10.1063/1.104361 (3 pages) | Cited 5 times

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Carrier concentrations at a level of ≳1×1019 cm−3 were achieved when Si‐capped GaAs underwent rapid thermal oxidation (RTO) in Ar+0.1% O2 ambient at 850–1000 °C for 10–60 s followed by rapid thermal annealing (RTA) in Ar ambient at 850–950 °C. Carrier concentrations in the RTO only samples were in the range of 2–5×1018 cm−3. Kinetic data on the diffusion of Si under RTO and RTO+RTA conditions are presented. The enhancement in the electrical activation of the diffused Si during RTA appears to be partly due to its local atomic rearrangement and partly due to redistribution in the GaAs. Ohmic contacts to the doped layer were made using Au‐Ge‐Ni alloy and contact resistances of ≲0.1 Ω mm were obtained.
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81.65.-b Surface treatments
73.40.Cg Contact resistance, contact potential
81.40.Gh Other heat and thermomechanical treatments
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