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25 Mar 1991

Volume 58, Issue 12, pp. 1227-1346

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Simultaneous sum‐frequency and second‐harmonic generation from a proton‐exchanged MgO‐doped LiNbO3 waveguide

Kazuhisa Yamamoto, Hiroaki Yamamoto, and Tetsuo Taniuchi

Appl. Phys. Lett. 58, 1227 (1991); http://dx.doi.org/10.1063/1.104370 (3 pages) | Cited 22 times

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Frequency conversion of two laser diodes in a proton‐exchanged MgO‐doped LiNbO3 waveguide is reported. Simultaneous generation of blue (0.43 μm), green (0.52 μm), and red (0.65 μm) coherent radiation by sum‐frequency and second‐harmonic generation of laser diodes at wavelengths of 0.86 and 1.3 μm has been observed for the first time. This is made possible by the wide phase‐matching bandwidth of the Cherenkov radiation scheme.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Gn Optical waveguides and couplers
78.66.-w Optical properties of specific thin films

Silver‐covered diffraction gratings as possible high‐efficiency laser driven photoemitters

F. Sabary, J. C. Dudek, A. Septier, and G. Granet

Appl. Phys. Lett. 58, 1230 (1991); http://dx.doi.org/10.1063/1.104371 (3 pages) | Cited 1 time

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We propose to use silver‐covered optical diffraction gratings as possible laser‐driven electron sources. Such structures allow surface plasma waves excitation and consequently an enhancement of the photoemission sensitivity. The latter can easily be tuned with the wavelength of the excitation laser by varying the incidence angle. Using a commercial diffraction grating, we obtained after a cesium activation, a quantum yield higher than 1% at the wavelength of a frequency tripled YAG laser (λ=355 nm) for the incidence angle corresponding to the plasmon resonance.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
42.79.Dj Gratings
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
78.66.Bz Metals and metallic alloys

Phase‐matched second‐harmonic generation in periodically poled optical fibers

Raman Kashyap

Appl. Phys. Lett. 58, 1233 (1991); http://dx.doi.org/10.1063/1.104372 (3 pages) | Cited 8 times

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Phase‐matched second‐harmonic generation is reported in periodically poled optical fibers for the first time. A periodic χ(2) was induced in optical fibers during phase‐matched periodic‐electric field‐induced second‐harmonic generation at a fundamental wavelength of 1064 nm. Further, it is shown that periodic poling can be achieved by photo excitation with radiation of 514.5 nm wavelength while applying a spatially periodic static field. In both cases, the mode interaction HEω11→HE2ω11 is quasi‐phase matched at 1064 nm. Seeding is observed in fibers beyond the poled region. A photoinduced index change has been measured using electric field induced second‐harmonic generation.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.Jq Electro-optical effects
42.81.Gs Birefringence, polarization

Mode locking of laser diodes by picosecond optical pulse synchronous pumping

Hitoshi Kawaguchi, Hideyuki Iwata, and Naohiro Tan‐no

Appl. Phys. Lett. 58, 1236 (1991); http://dx.doi.org/10.1063/1.104321 (3 pages)

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Short optical pulse generation from an external‐cavity laser diode (LD) by optical pulse pumping has been investigated for the first time. An optical pulse train (pulse duration ∼40 ps) generated by a gain‐switched LD was injected into a LD with an external cavity (slave LD) which was biased just below the laser threshold. The wavelength of the injected optical pulse was chosen to be slightly shorter than that of the slave LD. When the repetition rate of the optical injection pulse was nearly equal to the round trip time of the external cavity, the slave LD showed stable mode locking with the shorter pulse duration (∼22 ps) than that of the pumping pulse. At both the upper and lower repetition rates, the pulse duration of the slave LD also became shorter than that of the pumping pulse.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Strained‐layer multiple quantum well distributed Bragg reflector lasers with a fast monitoring photodiode

U. Koren, B. I. Miller, M. G. Young, M. Chien, A. H. Gnauck, P. D. Magill, S. L. Woodward, and C. A. Burrus

Appl. Phys. Lett. 58, 1239 (1991); http://dx.doi.org/10.1063/1.104322 (2 pages) | Cited 3 times

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We describe a photonic integrated circuit composed of a distributed Bragg reflector laser and a fast monitoring photodiode operating at 1.54 μm wavelength. The integrated waveguide photodiode has a 3 dB bandwidth of 2 GHz with 1.2 mA/mW responsivity. We demonstrate ‘‘on chip’’ monitoring of a digitally modulated laser signal at 2 Gbit/s.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking
85.60.Dw Photodiodes; phototransistors; photoresistors

Third‐order, nonlinear optical interactions of some benzporphyrins

D. V. G. L. N. Rao, Francisco J. Aranda, Joseph F. Roach, and David E. Remy

Appl. Phys. Lett. 58, 1241 (1991); http://dx.doi.org/10.1063/1.104323 (3 pages) | Cited 65 times

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We measured third‐order, nonlinear optical susceptibility χ(3) for a series of tetrabenzporphyrins in solution in tetrahydrofuran at 532 nm using degenerate four‐wave mixing with picosecond pulses and obtained values of molecular second hyperpolarizability 〈γ〉. The corresponding macroscopic χ(3) values calculated for nine compounds with different substituent groups are four to five orders larger than CS2. For five of the compounds the χ(3) values are in the range 1.2–2.8×10−8 esu. Our experiments indicate that the nonlinearity is predominately electronic in origin with a response time faster than the 15 ps resolution of our system.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.-a Optical materials
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Effect of strain on the resonant frequency and damping factor in InGaAs/InP multiple quantum well lasers

T. Fukushima, J. E. Bowers, R. A. Logan, T. Tanbun‐Ek, and H. Temkin

Appl. Phys. Lett. 58, 1244 (1991); http://dx.doi.org/10.1063/1.104324 (3 pages) | Cited 16 times

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The intensity noise of strained InxGa1−xAs/InP multiple quantum well (MQW) lasers is measured for three types of strain: tensile strain (x=0.48), no strain (x=0.53), and compressive strain (x=0.65). From a comparison between the measured noise power spectral density and the theoretical one, the resonance frequency and the carrier damping factor of each type of lasers are calculated. Although compressive strained MQW lasers show abot 10% increase in resonance frequency compared to those of tensile strained and unstrained lasers, this increase is smaller than theoretically predicted. Most important, all three types of MQW lasers show about two to three times higher nonlinear gain saturation and lower maximum bandwidth than conventional double‐heterostructure lasers. A solution to reduce this high damping is also discussed.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Effect of operating electric power on the dynamic behavior of quantum well vertical‐cavity surface‐emitting lasers

C. J. Chang‐Hasnain, C. E. Zah, G. Hasnain, J. P. Harbison, L. T. Florez, N. G. Stoffel, and T. P. Lee

Appl. Phys. Lett. 58, 1247 (1991); http://dx.doi.org/10.1063/1.104325 (3 pages) | Cited 4 times

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We investigated the effect of high operating voltage and series resistance on the dynamic behavior of strained InGaAs/GaAs quantum well vertical‐cavity surface‐emitting lasers (VCSELs). A large wavelength chirp in the lasing spectrum is observed for the lasers with high voltage/resistance even under low‐duty‐cycle pulse operation due to resistive heating close to the laser junction. Using an optimized laser design, VCSELs with 2.6 V threshold voltage and 40 Ω resistance are achieved. We believe this is the lowest threshold voltage and resistance reported to date for a 20 μm VCSEL with as‐grown mirrors. The wavelength chirp is reduced by nearly two orders of magnitude for these improved lasers.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems
72.80.Ey III-V and II-VI semiconductors
42.55.Px Semiconductor lasers; laser diodes

Surface‐emitting laser operation in vertical‐to‐surface transmission electrophotonic devices with a vertical cavity

T. Numai, M. Sugimoto, I. Ogura, H. Kosaka, and K. Kasahara

Appl. Phys. Lett. 58, 1250 (1991); http://dx.doi.org/10.1063/1.104326 (3 pages) | Cited 22 times

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We demonstrate the first surface‐emitting laser operation in a vertical‐to‐surface transmission electrophotonic device with a vertical cavity. The thyristor‐like current‐voltage characteristics, which are required for optical and electrical switching, are achieved. Threshold current during the on state is as low as 1.2 mA. All 100 devices, which were randomly extracted from a grown wafer, emit laser light.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
07.60.-j Optical instruments and equipment
42.79.-e Optical elements, devices, and systems
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks

Subpicosecond monolithic colliding‐pulse mode‐locked multiple quantum well lasers

Y. K. Chen, M. C. Wu, T. Tanbun‐Ek, R. A. Logan, and M. A. Chin

Appl. Phys. Lett. 58, 1253 (1991); http://dx.doi.org/10.1063/1.104327 (3 pages) | Cited 64 times

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Ultrafast subpicosecond optical pulse generation is achieved by passive colliding‐pulse mode locking of monolithic multiple quantum well InGaAsP semiconductor lasers. Transform‐limited optical pulses with durations of 1.1, 0.83, 1.0, and 0.64 ps are achieved at repetition rates of 40, 80, 160, and 350 GHz, respectively, without using any external ac sources.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes

Electron cyclotron resonance plasma‐induced damage in AlGaAs/GaAs/AlGaAs single quantum wells

V. Swaminathan, M. T. Asom, U. K. Chakrabarti, and S. J. Pearton

Appl. Phys. Lett. 58, 1256 (1991); http://dx.doi.org/10.1063/1.104328 (3 pages) | Cited 9 times

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Changes in cathodoluminescence (CL) intensity from a buried single AlGaAs/GaAs/AlGaAs quantum well (QW) as a result of exposure to electron cyclotron resonance (ECR) hydrogen or argon discharges are reported. For additional dc biases of 150 V on the sample during either H2 or Ar plasma exposure, we observe substantial decreases in CL intensity from the well. Ar+ ion bombardment creates damage more resistant to annealing than does H+ ion bombardment at the same energy. The ECR discharges alone with zero additional dc bias cause degradation in the well luminescence due possibly to defects created by energetic electron bombardment or ultraviolet illumination. At intermediate bias voltages (50 V) strong hydrogen passivation of nonradiative centers is observed, leading to 500% increases in CL intensity from the well. The initial characteristics of the QW under these conditions are restored by annealing at 400 °C.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
81.65.-b Surface treatments
66.30.J- Diffusion of impurities
61.80.Jh Ion radiation effects

Formation of carbon fibers in corona discharges

J. R. Brock and P. Lim

Appl. Phys. Lett. 58, 1259 (1991); http://dx.doi.org/10.1063/1.104329 (3 pages) | Cited 7 times

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We examine carbon fibers grown at the ends of corona wires during negative point‐to‐plane corona discharges in hydrocarbon atmospheres. Under certain growth conditions, these fibers are hollow tubes with smooth walls; under other growth conditions, the fibers are also hollow tubes, but have rough surfaces. Scanning electron micrographs of these fibers are discussed and possible applications for these fibers are noted.
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68.70.+w Whiskers and dendrites (growth, structure, and nonelectronic properties)
81.10.Bk Growth from vapor
52.80.Hc Glow; corona
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Tunneling and thermal emission of electrons from a distribution of shallow traps in SiO2

Scott E. Thompson and Toshikazu Nishida

Appl. Phys. Lett. 58, 1262 (1991); http://dx.doi.org/10.1063/1.104330 (3 pages) | Cited 7 times

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Charging of existing oxide electron traps is found to be strongly oxide electric field dependent. The transition rate of trapped electrons tunneling into the oxide conduction band increases exponentially with increasing oxide field due to barrier thinning. Electron detrapping via tunnel emission is measured at 77 K using a new isochronal electric‐field‐stimulated emission technique which gives the energy spectrum of the charged oxide electron traps. The experimental spectrum peaks at 0.9 eV while the measured thermal activation for electron detrapping is about 0.4 eV which are consistent with the Mott ratio of the Jahn–Teller effect for the polar SiO2, 1.9.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.Ht High-field and nonlinear effects
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Improved characteristics of GaAs metal‐semiconductor field‐effect transistors on Si substrates back‐coated with SiO2 by metalorganic chemical vapor deposition

T. Egawa, S. Nozaki, T. Soga, T. Jimbo, and M. Umeno

Appl. Phys. Lett. 58, 1265 (1991); http://dx.doi.org/10.1063/1.104331 (3 pages) | Cited 7 times

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GaAs metal‐semiconductor field‐effect transistors (MESFETs) on Si substrates back‐coated with SiO2 grown at high temperature by metalorganic chemical vapor deposition have shown good pinch‐off and suppressed sidegating. The SiO2 back‐coating suppresses Si incorporation into an undoped GaAs layer during growth, and use of such an undoped layer with a low electron concentration beneath the channel layer improves a pinch‐off characteristic. Higher growth temperature also improves crystallinity of GaAs layers grown on Si and helps to suppress the sidegating effect of GaAs MESFETs. The maximum transconductance of 160 mS/mm and the K value of 46.8 mA/V2 mm have been obtained for a MESFET with 2.5 μm gate length.
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85.30.Tv Field effect devices
73.61.Ey III-V semiconductors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Temperature dependence of minority‐carrier mobility and recombination time in p‐type GaAs

K. Beyzavi, K. Lee, D. M. Kim, M. I. Nathan, K. Wrenner, and S. L. Wright

Appl. Phys. Lett. 58, 1268 (1991); http://dx.doi.org/10.1063/1.104332 (3 pages) | Cited 14 times

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The electron mobility in p‐type GaAs, μpe, has been determined as a function of temperature by measuring the common‐emitter cutoff frequency, fT, of an AlGaAs/GaAs n‐p‐n heterojunction bipolar transistor. The base was 0.6 μm thick and it was doped with 4×1018 cm−3 Be. The 300 K value of 1055 cm2/V s and 79 K value of 5000 cm2/V s for μpe are comparable to the previously measured values. The discrepancy with the calculated values is pointed out. The recombination lifetime is also measured as a function of temperature for minority carriers. The results agree reasonably well with the calculated radiative recominbation time.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.Fr Low-field transport and mobility; piezoresistance
71.55.Eq III-V semiconductors
72.80.Ey III-V and II-VI semiconductors

Extrinsic photoconductivity in chemical vapor deposition diamond

David G. Jeng, H. S. Tuan, Robert F. Salat, and Glenn J. Fricano

Appl. Phys. Lett. 58, 1271 (1991); http://dx.doi.org/10.1063/1.104333 (3 pages) | Cited 1 time

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Photoconductivity in the visible region has been studied in diamond films (DF) grown by the chemical vapor deposition process. It was found that the photocurrent increased linearly with the external bias voltage within the experimental range (30 V). Moreover, by exposing both boron‐doped and undoped DF samples in air mass 1 (AM1) condition, the photocurrent produced by the former was approximately an order higher than that by the latter.
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72.40.+w Photoconduction and photovoltaic effects
73.40.Ns Metal-nonmetal contacts
78.66.Qn Polymers; organic compounds
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Excitonic photoluminescence spectra of AlxGa1−xAs grown by metalorganic vapor phase epitaxy

S. M. Olsthoorn, F. A. J. M. Driessen, and L. J. Giling

Appl. Phys. Lett. 58, 1274 (1991); http://dx.doi.org/10.1063/1.104334 (3 pages) | Cited 7 times

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Excitonic transitions were measured in AlxGa1−xAs, grown by metalorganic vapor phase epitaxy (MOVPE), at two different alloy compositions using high resolution photoluminescence spectroscopy. The first observation is reported of an excitonic spectrum which is separated into neutral donor, ionized donor, and neutral acceptor bound exciton transitions [(D0,X), (D+,X), and (A0,X)] at an aluminum fraction higher than 20%. A significant decrease in linewidth of the (D0,X) peak is found by decreasing the excitation density and by decreasing the laser spot size. This means that the linewidths of the various excitonic transitions are, apart from alloy broadening, strongly dependent on both the long range Coulombic potentials of the ionized impurities in our samples, and on clustering effects. Finally, linewidths of 1.75 and 2.5 meV were measured for the (D0,X) transitions for samples with Al fractions of 0.12 and 0.244, respectively. These are the smallest values ever reported in literature for samples grown by MOVPE.
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78.55.Cr III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Novel mechanism of a real‐space transfer oscillator

E. Schöll and K. Aoki

Appl. Phys. Lett. 58, 1277 (1991); http://dx.doi.org/10.1063/1.104335 (3 pages) | Cited 19 times

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A new mechanism for self‐generated current oscillations in modulation‐doped semiconductor heterostructures under parallel conduction is proposed. It is based upon the nonlinear dynamics of real‐space electron transfer and delayed dielectric relaxation of the interface potential barrier resulting from the space charge in the doped AlGaAs layer. From our simulations we predict current oscillations in the 20–80 GHz range under dc bias.
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72.20.Ht High-field and nonlinear effects
73.40.-c Electronic transport in interface structures
05.45.-a Nonlinear dynamics and chaos

Leakage mechanisms of titanium silicided n+/p junctions fabricated using rapid thermal processing

M. Ada‐Hanifi, A. Chantre, D. Levy, J. P. Gonchond, Ph. Delpech, and A. Nouailhat

Appl. Phys. Lett. 58, 1280 (1991); http://dx.doi.org/10.1063/1.104336 (3 pages) | Cited 9 times

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We report a physical analysis of the reverse leakage currents observed in titanium silicided n+/p junctions fabricated using rapid thermal processing. By studying the dependence of currents on temperature, bias voltage, and diode geometry, we have been able to identify the leakage mechanisms. A defect level at Ev+0.30 eV, detected in concentrations ≳1014 cm−3, is shown to be responsible for a low leakage current component, through a generation‐recombination mechanism. Silicide asperities protruding through the metallurgical junction are proposed to account for the tunneling nature of a second, high leakage, distribution of currents.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
81.40.Rs Electrical and magnetic properties related to treatment conditions

Independent and ambipolar tunneling in asymmetric‐coupled quantum well structures

C. Tanguy, B. Deveaud, A. Regreny, D. Hulin, and A. Antonetti

Appl. Phys. Lett. 58, 1283 (1991); http://dx.doi.org/10.1063/1.104337 (3 pages) | Cited 5 times

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We report femtosecond pump‐probe transmission spectroscopy experiments on GaAs/AlGaAs asymmetric‐coupled quantum wells, using a spectrally narrow optical excitation at 740 nm. The time‐resolved evolution of the bleaching demonstrates the tunneling of both carriers through the barrier. At high densities a single tunneling time is observed in opposition to the low density regime, where the electron and hole contributions are well separated.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
73.40.Gk Tunneling

Low‐temperature chemical vapor deposition of epitaxial Si and SiGe layers at atmospheric pressure

W. B. de Boer and D. J. Meyer

Appl. Phys. Lett. 58, 1286 (1991); http://dx.doi.org/10.1063/1.104338 (3 pages) | Cited 35 times

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In an effort to determine the low‐temperature limit for the growth of Si and Si1−xGex epitaxial layers in an atmospheric‐pressure chemical vapor deposition (CVD) reactor, good quality material has been obtained at temperatures down to 600 °C, using SiH2Cl2 and GeH4 in H2 ambient. Si/Si1−xGex/Si heteroepitaxial structures are of good crystalline quality as well, showing abrupt interfaces. The Si‐growth rate enhancement, caused by the addition of GeH4 to the gas flow at low temperatures, turns into growth‐rate inhibition at higher temperatures. In this experiment oxygen and water partial pressures are several orders of magnitude higher than in ultrahigh vacuum CVD, without causing noticeable negative effects.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

High‐pressure photoluminescence study of ordered Ga0.5In0.5P alloys grown on GaAs by organometallic vapor phase epitaxy

Toshihiko Kobayashi and Rajpal S. Deol

Appl. Phys. Lett. 58, 1289 (1991); http://dx.doi.org/10.1063/1.105212 (3 pages) | Cited 9 times

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Photoluminescence (PL) measurements on Ga0.5In0.5P grown by organometallic vapor phase epitaxy on GaAs substrates at various growth temperatures have been made as a function of pressure up to about 4.5 GPa. In the pressure range 0–3.8 GPa the PL spectrum exhibits a shift to higher energies. It is found that the pressure coefficient of the PL peak energy depends significantly on the growth temperature and hence on the degree of ordering. These results are partly explained in terms of repulsion between the Γ‐folded energy states in the CuPt‐type ordered structure.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.61.Ey III-V semiconductors
62.50.-p High-pressure effects in solids and liquids

Optical and electrical properties of GaAs light‐emitting diodes grown on Si substrates by a hybrid method of molecular beam and liquid phase epitaxies

Y. Yazawa, T. Minemura, J. Asano, and T. Unno

Appl. Phys. Lett. 58, 1292 (1991); http://dx.doi.org/10.1063/1.104339 (3 pages) | Cited 4 times

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Light‐emitting diodes (LEDs) have been fabricated on GaAs‐on‐Si substrates grown by a hybrid method which combines molecular beam epitaxy (MBE) and liquid phase epitaxy. The LEDs had a low reverse leakage current and high stability of light intensity for an aging operation compared with MBE‐grown LEDs. These results are attributed to a higher crystallinity in the hybrid‐grown GaAs layers on Si substrates.
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85.60.Jb Light-emitting devices
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.61.Ey III-V semiconductors

Scanning tunneling optical spectroscopy of semiconductors

L. Q. Qian and B. W. Wessels

Appl. Phys. Lett. 58, 1295 (1991); http://dx.doi.org/10.1063/1.104340 (2 pages) | Cited 14 times

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Photoenhanced tunneling currents are measured with a scanning tunneling microscope (STM) for semiconductors illuminated with monochromatic light. The spectral response of the STM tunnel junction was measured over the spectral range of 0.8–1.5 eV. Optical spectra for p‐type (111)Si, epitaxial n‐type (100)InP, and p‐type (100)GaAs were obtained.
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07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
73.40.Gk Tunneling
73.61.Ey III-V semiconductors
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Photon‐assisted resonant tunneling through variably spaced superlattice energy filters

A. Larsson, S. I. Borenstain, B. Jonsson, I. Andersson, J. Westin, and T. G. Andersson

Appl. Phys. Lett. 58, 1297 (1991); http://dx.doi.org/10.1063/1.104341 (2 pages) | Cited 3 times

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We report on the observation of photon‐assisted resonant tunneling in a multiple quantum well structure composed of doped quantum wells separated by variably spaced superlattice energy filters. Electrons confined in the quantum wells are excited to the second quantized state by intersubband absorption of incident infrared radiation and are subsequently emitted through the filters under appropriate bias conditions. This is manifested by a distinct peak, with an associated negative differential photoconductance, in the photocurrent versus bias voltage characteristic at low temperatures.
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73.50.Pz Photoconduction and photovoltaic effects
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
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