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1 Apr 1991

Volume 58, Issue 13, pp. 1355-1447

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Thickness‐dependent kinetics of laser‐induced oxidation of thin copper films

M. Wautelet and F. Hanus

Appl. Phys. Lett. 58, 1355 (1991); http://dx.doi.org/10.1063/1.104306 (2 pages) | Cited 3 times

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Thin copper films are deposited onto glass and irradiated, in air, by means of a scanned Ar+ laser beam. The kinetics of oxidation is measured by an interferometric method. It is shown that the kinetics of oxidation depends on the laser beam power density and on the initial thickness of the deposited copper films.
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81.05.Bx Metals, semimetals, and alloys
79.20.Ds Laser-beam impact phenomena
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Broad‐area high‐power semiconductor optical amplifier

Lew Goldberg and J. F. Weller

Appl. Phys. Lett. 58, 1357 (1991); http://dx.doi.org/10.1063/1.104307 (3 pages) | Cited 4 times

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Operating characteristics of a high‐power 400‐μm‐wide, 500‐μm‐long double‐pass near‐traveling‐wave GaAlAs amplifier are described. In pulsed operation, 2.5 W of diffraction‐limited emission at 820 nm was obtained with an external power gain of 10 dB and 24% electrical to optical conversion efficiency.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
85.60.-q Optoelectronic devices

Optical scatter in epitaxial semiconductor multilayers

P. L. Gourley, L. R. Dawson, T. M. Brennan, B. E. Hammons, J. C. Stover, C. F. Schaus, and S. Sun

Appl. Phys. Lett. 58, 1360 (1991); http://dx.doi.org/10.1063/1.104308 (3 pages)

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We report measurements of optical scatter in epitaxial semiconductor multilayer structures. The structures comprise quarter‐wave layers of Al0.2Ga0.8As/AlAs and GaAs/AlAs grown by molecular beam epitaxy and Al0.2Ga0.8As/AlAs grown by metalorganic chemical vapor deposition to assess differences due to growth technique and layer composition. The bidirectional reflective distribution function (BRDF) is measured at a wavelength of 835 nm corresponding closely to the Bragg reflection condition of the multilayer. The BRDF measurement yields calculated values for the total integrated scatter and effective surface roughness. The former is in the range 7×10−4–5×10−3 while the latter is typically 3–16 Å over the spatial frequency range 3×10 −2–1 μm−1. Both growth techniques yield comparable scatter loss on average, but there are significant differences in microscopic surface morphology, uniformity of scatter across the wafer, and lower limits of scatter. The measurements have significant implications for applications such as surface‐emitting laser technology.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Monolithic integration of an (Al)GaAs laser and an intracavity electroabsorption modulator using selective partial interdiffusion

S. O’Brien, J. R. Shealy, and G. W. Wicks

Appl. Phys. Lett. 58, 1363 (1991); http://dx.doi.org/10.1063/1.104309 (3 pages) | Cited 20 times

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The monolithic integration of an intracavity modulator with a multiple quantum well (Al)GaAs laser has been accomplished with the use of selective partial interdiffusion. Interdiffusion was used to create a blue‐shifted and semitransparent modulator section in a ridge laser structure. In measuring the total optical output power from the devices, steady‐state extinction ratios of 20 dB were measured at reverse biases of −4.6 and −3.6 V for modulator sections with lengths of 200 and 400 μm, respectively. Shifting of the lasing mode towards longer wavelengths (Δλ≊0–50 Å) was also observed making the structure useful as a tunable device and for frequency modulation applications.
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42.55.Px Semiconductor lasers; laser diodes
42.82.-m Integrated optics
42.60.Fc Modulation, tuning, and mode locking

InAsyP1−y/InP multiple quantum well optical modulators for solid‐state lasers

T. K. Woodward, Theodore Sizer, and T. H. Chiu

Appl. Phys. Lett. 58, 1366 (1991); http://dx.doi.org/10.1063/1.104310 (3 pages) | Cited 37 times

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We report the operation of strained‐layer InAsyP1−y/InP multiple quantum well optical modulators at wavelengths compatible with solid‐state lasers such as neodymium‐doped yttrium aluminum garnet. A structure having 50 periods of 100 Å InAsyP1−y quantum wells with 100 Å InP barriers is described that has an exciton peak at 1.05 μm and a single pass transmission contrast ratio of 1.4. Favorable comparison is made to similar InxGa1−xAs/GaAs structures.
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42.79.Hp Optical processors, correlators, and modulators
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.60.Fc Modulation, tuning, and mode locking

Electrically controlled frequency scanning by a photoconducting antenna array

B. B. Hu, N. Froberg, M. Mack, X.‐C. Zhang, and D. H. Auston

Appl. Phys. Lett. 58, 1369 (1991); http://dx.doi.org/10.1063/1.104311 (3 pages) | Cited 4 times

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The radiation frequency of an electromagnetic wave from a spatial periodically biased photoconducting antenna array can be electrically scanned by varying the periodicity of the bias voltage on the antennas. Over 900 GHz frequency tuning bandwidth has been demonstrated.
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41.20.Jb Electromagnetic wave propagation; radiowave propagation
06.60.Jn High-speed techniques (microsecond to femtosecond)
84.40.Ba Antennas: theory, components and accessories
42.72.-g Optical sources and standards

Dependence of InGaAs/InP multiquantum well laser characteristics on the degree of substrate misorientation

J. P. van der Ziel, R. A. Logan, T. Tanbun‐Ek, E. M. Monberg, and A. M. Sergent

Appl. Phys. Lett. 58, 1372 (1991); http://dx.doi.org/10.1063/1.104312 (3 pages) | Cited 3 times

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The threshold current density, internal quantum efficiency, internal loss, and emission wavelength of InGaAsP/InP multiquantum well lasers, grown by atmospheric pressure metalorganic chemical vapor deposition, were measured as a function of substrate orientation on and away from the (001) towards the nearest [011] and [111]A. The laser parameters are optimized for (001) oriented substrates. Substrate misorientations of more than 3° in either direction yield lasers with increased threshold current density and lower internal quantum efficiency. The internal loss increases and the surface morphology becomes visually poorer for substrate misorientations of 6°. The laser emission shifts to longer wavelength with increasing misorientation.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Picosecond carrier dynamics and tunneling‐assisted recombination in photorefractive δ‐doped superlattices

Stephen E. Ralph, Andrea Lacaita, Federico Capasso, and Roger J. Malik

Appl. Phys. Lett. 58, 1375 (1991); http://dx.doi.org/10.1063/1.104313 (3 pages) | Cited 1 time

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We report the first time‐resolved photoluminescence of photorefractive δ‐doped superlattices with picosecond resolution. The measurements were performed by the time‐correlated photon counting technique. The subband luminescence shows that even at very high photogenerated carrier densities the screening of the internal electric fields remains incomplete. At short times (<500 ps) the dynamics of the structure is determined by recombination in flatband regions. On a longer time scale (1–100 ns) the structure returns to equilibrium via tunneling‐assisted recombination. The corresponding lifetimes are consistent with estimates based on the calculated wave functions of the sawtooth structure.
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78.47.-p Spectroscopy of solid state dynamics
73.61.Ey III-V semiconductors
78.55.Cr III-V semiconductors

Properties of silicon surface cleaned by hydrogen plasma

M. Ishii, K. Nakashima, I. Tajima, and M. Yamamoto

Appl. Phys. Lett. 58, 1378 (1991); http://dx.doi.org/10.1063/1.105211 (3 pages) | Cited 22 times

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Properties of the silicon surface cleaned by the irradiation of the hydrogen electron cyclotron resonance plasma has been studied by x‐ray photoelectron spectroscopy, reflection high‐energy electron diffraction, and Fourier transform infrared spectroscopy. It was confirmed that the irradiation of the hydrogen plasma eliminated both a native oxide layer and a contaminated carbon layer from the silicon surface. In addition, it was found that the surface has the retardation effect on the air oxidation at room temperature. However, the plasma irradiation caused the minute roughness on the surface and hydrogen penetration into the bulk.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
81.65.-b Surface treatments
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

Examination of the optic tensor structure in the electroclinic effect in liquid crystals

S. J. Elston and J. R. Sambles

Appl. Phys. Lett. 58, 1381 (1991); http://dx.doi.org/10.1063/1.104314 (3 pages) | Cited 6 times

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The optic tensor configuration of a thin ferroelectric liquid crystal layer exhibiting the electroclinic effect is examined by the excitation of optic modes in the layer. It is seen that the restructuring involves no tilt of the optic axis out of the plane of the cell surfaces. This is interpreted in terms of a quasi‐bookshelf structure in the smectic layering of the cell.
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61.30.Eb Experimental determinations of smectic, nematic, cholesteric, and other structures
64.70.M- Transitions in liquid crystals
78.20.Jq Electro-optical effects

New nondestructive depth profile measurement by using a refracted x‐ray fluorescence method

Yuji C. Sasaki and Kichinosuke Hirokawa

Appl. Phys. Lett. 58, 1384 (1991); http://dx.doi.org/10.1063/1.104315 (3 pages) | Cited 16 times

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We demonstrated analysis of the nondestructive depth profile near the surface of As ion‐implanted Si substrate by using the refracted x‐ray fluorescence method. Experimental results show that the angular distribution of the measured x‐ray fluorescence is dependent on the surface roughness of the substrate.
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61.05.cf X-ray scattering (including small-angle scattering)
61.05.cj X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.
61.72.uf Ge and Si
68.35.B- Structure of clean surfaces (and surface reconstruction)

Study of crystallographic orientations in the diamond film on the (100) surface of cubic boron nitride using a Raman microprobe

M. Yoshikawa, H. Ishida, A. Ishitani, S. Koizumi, and T. Inuzuka

Appl. Phys. Lett. 58, 1387 (1991); http://dx.doi.org/10.1063/1.104316 (2 pages) | Cited 21 times

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We have measured Raman spectra of a diamond film prepared on the (100) surface of cubic boron nitride(c‐BN) by the dc plasma chemical vapor deposition method. It is found that the polarization property of the Raman line of diamond coincides well with that of the LO phonon for the (100) surface of c‐BN. The coincidence between the polarization property of Raman lines of diamond and c‐BN evidences heteroepitaxial growth of the diamond film on the (100) surface of c‐BN.
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68.55.-a Thin film structure and morphology
78.30.Jw Organic compounds, polymers
78.66.Qn Polymers; organic compounds

Mechanistic investigations of nanometer‐scale lithography at liquid‐covered graphite surfaces

Reginald M. Penner, Michael J. Heben, Nathan S. Lewis, and Calvin F. Quate

Appl. Phys. Lett. 58, 1389 (1991); http://dx.doi.org/10.1063/1.104317 (3 pages) | Cited 16 times

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Pulse‐induced nanometer‐scale lithography has been performed on graphite surfaces that were in contact with pure water or other organic liquids. Very reproducible control over the pit diameter was observed in aqueous solutions, and a well‐defined voltage threshold (4.0±0.2 V) was also apparent. Near the threshold voltage, 7 Å diameter×2 Å high protrusions were formed, while larger initial pulse voltages resulted in pits of diameter≳20 Å.<lz>
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07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
68.08.-p Liquid-solid interfaces
68.43.-h Chemisorption/physisorption: adsorbates on surfaces

Novel metal ion surface modification technique

I. G. Brown, X. Godechot, and K. M. Yu

Appl. Phys. Lett. 58, 1392 (1991); http://dx.doi.org/10.1063/1.104318 (3 pages) | Cited 74 times

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We describe a method for applying metal ions to the near‐surface region of solid materials. The added species can be energetically implanted below the surface or built up as a surface film with an atomically mixed interface with the substrate; the metal ion species can be the same as the substrate species or different from it, and more than one kind of metal species can be applied, either simultaneously or sequentially. Surface structures can be fabricated, including coatings and thin films of single metals, tailored alloys, or metallic multilayers, and they can be implanted or added onto the surface and ion beam mixed. We report two simple demonstrations of the method: implantation of yttrium into a silicon substrate at a mean energy of 70 keV and a dose of 1×1016 atoms/cm2, and the formation of a titanium‐yttrium multilayer structure with ion beam mixing to the substrate.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.80.Jh Ion radiation effects
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
52.80.Vp Discharge in vacuum

Sm2Fe17Nx: Site and valence of the interstitial nitrogen

T. W. Capehart, R. K. Mishra, and F. E. Pinkerton

Appl. Phys. Lett. 58, 1395 (1991); http://dx.doi.org/10.1063/1.104319 (3 pages) | Cited 22 times

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X‐ray absorption fine structure from the samarium L3 edge reveals that there are 2.8±1.0 nitrogen atoms in Sm2Fe17Nx covalently bonded 2.54 Å from the Sm site. This coordination number and radial distance are consistent with N atoms occupying the 9(e) sites of the expanded Sm2Fe17 lattice.
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78.70.Dm X-ray absorption spectra
61.05.cf X-ray scattering (including small-angle scattering)
61.05.cj X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.

Refractive index changes in a GaAs multiple quantum well structure produced by impurity‐induced disordering using boron and fluorine

S. I. Hansen, J. H. Marsh, J. S. Roberts, and R. Gwilliam

Appl. Phys. Lett. 58, 1398 (1991); http://dx.doi.org/10.1063/1.104320 (3 pages) | Cited 10 times

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The effect of boron and fluorine impurity‐induced disordering on the refractive index of AlxGa1−xAs multiple quantum well waveguides has been studied experimentally using a grating coupler formed in low‐index material. Substantial changes ≳1% in the refractive index, were obtained in partially disordered material over the measured wavelength range. Fluorine was found to produce larger changes than boron for similar annealing conditions.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
61.72.U- Doping and impurity implantation
42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers

Investigation of lateral straggling of Hg ions in Si3N4 by normal and glancing angle Rutherford backscattering

Ke‐Ming Wang, Qing‐Tai Zao, Bo‐Rong Shi, Zhong‐Lie Wang, Xiang‐Dong Liu, and Ji‐Tian Liu

Appl. Phys. Lett. 58, 1401 (1991); http://dx.doi.org/10.1063/1.105205 (3 pages) | Cited 1 time

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200 keV Hg ions were implanted in Si3N4 at different angles of 0°, 45°, and 75°. The lateral straggling of Hg ions in Si3N4 was studied by glancing angle and normal Rutherford backscattering of 2.1 MeV He ions. The obtained result is compared with the Monte Carlo code trim ’89. The lateral straggling is found to be in good agreement with the prediction.
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61.72.up Other materials
61.80.Jh Ion radiation effects
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Photoluminescence of deep levels in ion‐implanted AlxGa1−xAs

W. P. Gillin, K. P. Homewood, B. J. Sealy, and J. Roberts

Appl. Phys. Lett. 58, 1404 (1991); http://dx.doi.org/10.1063/1.105206 (3 pages) | Cited 2 times

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We have studied the effect of ion implantation of donors into AlxGa1−xAs epilayers and have shown the presence of two deep level luminescence centers whose emission energies are strongly dependent on aluminum concentration. The variation of the intensity of these levels with annealing conditions gives an activation energy for their annihilation and this is found to be in agreement with that obtained from electrical data. From this, a model for the electrical activation of sulphur‐implanted GaAs is proposed.
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78.55.Cr III-V semiconductors
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
61.72.U- Doping and impurity implantation
61.72.Bb Theories and models of crystal defects

Gas source molecular beam epitaxy growth of short period GaP/AlP(001) superlattices

Hajime Asahi, Kumiko Asami, Tetsuya Watanabe, Soon Jae Yu, Tadaaki Kaneko, Shuichi Emura, and Shun‐ichi Gonda

Appl. Phys. Lett. 58, 1407 (1991); http://dx.doi.org/10.1063/1.105207 (3 pages) | Cited 14 times

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Short period GaP/AlP superlattices are grown on GaP and GaAs substrates at 600 °C by gas source molecular beam epitaxy with growth interruption. Alternating monolayer growth of GaP and AlP is confirmed by the observation of the reflection high‐energy electron diffraction intensity oscillations during growth. The formation of short period superlattice structures and the zone‐folded LO phonons are observed in the x‐ray diffraction rocking curves and Raman spectra, respectively.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.30.Fs III-V and II-VI semiconductors

Subpicosecond characterization of carrier transport in GaAs‐metal‐semiconductor‐metal photodiodes

M. Lambsdorff, M. Klingenstein, J. Kuhl, C. Moglestue, J. Rosenzweig, A. Axmann, Jo. Schneider, A. Hülsmann, H. Leier, and A. Forchel

Appl. Phys. Lett. 58, 1410 (1991); http://dx.doi.org/10.1063/1.105208 (3 pages) | Cited 14 times

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The temporal evolution of the photocurrent in interdigitated GaAs metal‐semiconductor‐ metal Schottky photodiodes is directly measured in the time domain by photoconductive and electro‐optic sampling with subpicosecond resolution. Excellent agreement is found between experiment and theoretical data obtained by two‐dimensional self‐consistent Monte Carlo calculations.
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85.60.Dw Photodiodes; phototransistors; photoresistors
78.47.-p Spectroscopy of solid state dynamics
85.30.De Semiconductor-device characterization, design, and modeling
73.30.+y Surface double layers, Schottky barriers, and work functions

One monolayer of Sb or Bi used as a buffer layer preventing oxidation of InP

Masao Yamada, Anita K. Wahi, Paul L. Meissner, Alberto Herrera, Tom Kendelewicz, and William E. Spicer

Appl. Phys. Lett. 58, 1413 (1991); http://dx.doi.org/10.1063/1.105183 (3 pages) | Cited 6 times

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One monolayer of Sb or Bi has been used as a buffer layer to protect InP surfaces against the oxidation. We have used photoemission spectroscopy to estimate the oxide fraction of In and the surface Fermi level position. We find that one monolayer of Sb or Bi reduces the oxidation of underlying InP at least by more than two orders of magnitude. For passivated surfaces with one monolayer of Sb or Bi, the surface Fermi level remains pinned at the conventional pinning level 0.45 eV below the conduction‐band minimum (CBM) even for oxygen exposures above 1×107 L, whereas without the Sb or Bi overlayers, the surface Fermi level is near the CBM for the same O2 exposure. Core‐level studies indicate that the Sb or Bi overlayer must be itself oxidized before there is strong oxidation of the InP.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts

Use of ultraviolet/ozone cleaning to remove C and O from GaAs prior to metalorganic molecular beam epitaxy and metalorganic chemical vapor deposition

S. J. Pearton, F. Ren, C. R. Abernathy, W. S. Hobson, and H. S. Luftman

Appl. Phys. Lett. 58, 1416 (1991); http://dx.doi.org/10.1063/1.105184 (3 pages) | Cited 9 times

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Ultraviolet/ozone cleaning of GaAs substrates prior to metalorganic molecular beam epitaxy at 500 °C is shown to reduce the interfacial C and O concentrations by more than two orders of magnitude. Metal‐semiconductor field‐effect transistors (MESFETs) utilizing this cleaning prior to growth of the component epitaxial layers display superior current voltage (I‐V) saturation characteristics compared to identical devices grown without the cleaning step. By contrast, provided the GaAs surface is not contaminated with silicates, the atomic hydrogen generated at the growth surface during growth by metalorganic chemical vapor deposition (MOCVD) leads to lower O and C interfacial concentrations, thereby circumventing the need for ozone cleaning. MESFETs grown by MOCVD with or without this cleaning have excellent I‐V characteristics.
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81.65.-b Surface treatments
85.40.Hp Lithography, masks and pattern transfer
85.30.Tv Field effect devices

Epitaxial growth of β‐SiC on silicon‐on‐sapphire substrates by chemical vapor deposition

J. C. Pazik, G. Kelner, and N. Bottka

Appl. Phys. Lett. 58, 1419 (1991); http://dx.doi.org/10.1063/1.105185 (3 pages) | Cited 5 times

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Cubic (β) silicon carbide films have been grown epitaxially on silicon‐on‐sapphire (SOS) substrates by chemical vapor deposition. The β‐SiC films were grown between 1340–1370 °C on SOS substrates which have a layer of silicon deposited in situ or were grown directly on the as‐is SOS substrate. In both cases, the silicon surface was carbonized prior to growth of the β‐SiC epilayer. With a growth rate of ∼3.5 μm/h, 7 μm β‐SiC films have been obtained. The films have been characterized by infrared reflectance spectroscopy, optical and scanning electron microscopy. Specular films are obtained which have growth columns and pits. Electrical transport properties of the films were measured by the Van der Pauw–Hall method. The films are p type with carrier concentrations between 1×1018 and 2×1018 cm−3 and Hall mobilities of approximately 30 cm2/V s.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Enhanced dark conductivity during the plastic deformation of red mercuric iodide

Jochen Marschall and Frederick Milstein

Appl. Phys. Lett. 58, 1422 (1991); http://dx.doi.org/10.1063/1.105186 (3 pages) | Cited 2 times

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An enhanced dark conductivity is shown to exist during the plastic shear deformation of red mercuric iodide single crystals. This enhancement is related to the movement of ‘‘easy glide’’ dislocations during deformation.
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72.20.Fr Low-field transport and mobility; piezoresistance
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
81.40.Lm Deformation, plasticity, and creep

In situ stress measurement of chemical vapor deposited tungsten silicides

Gen Washidzu, Tohru Hara, Takaaki Miyamoto, and Toshihiro Inoue

Appl. Phys. Lett. 58, 1425 (1991); http://dx.doi.org/10.1063/1.105187 (3 pages) | Cited 8 times

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Peeling is a serious problem in chemical vapor deposited (CVD) tungsten silicide (WSix). In situ stress measurement during annealing is performed for sputtered and CVD WSix films at temperatures of 25–900 °C. In monosilane reduced CVD WSix, intrinsic stress increases abruptly at 400 °C and reaches a maximum of 7.8×108 Pa at 450 °C. However, such abrupt stress changes are not found at low temperatures in sputtered and dichlorosilane reduced CVD films. Abrupt stress change appeared in monosilane WSix at 400–450 °C, which is a cause of peeling during annealing, may be due to the grain growth of hexagonal and tetragonal WSi2 grains.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.61.Ng Insulators
68.55.-a Thin film structure and morphology
68.35.Fx Diffusion; interface formation
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