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1 Apr 1991

Volume 58, Issue 13, pp. 1355-1447

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Quantum Hall effect in InAs/AlSb quantum wells

P. F. Hopkins, A. J. Rimberg, R. M. Westervelt, G. Tuttle, and H. Kroemer

Appl. Phys. Lett. 58, 1428 (1991); http://dx.doi.org/10.1063/1.105188 (3 pages) | Cited 27 times

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We demonstrate via low‐temperature electron transport measurements the realization of a high‐mobility (≳300 000 cm2/V s) two‐dimensional electron gas in unintentionally doped InAs/AlSb single 120 Å quantum wells grown on GaAs substrates by molecular beam epitaxy. Magnetoresistance and Hall measurements at T∼0.4 K show a well‐formed quantum Hall effect, with effects due to spin splitting observed at filling factors as high as ν=17. The electron densities of these wells could be reduced by a factor ∼5 by using the negative persistent photoconductivity of these samples.
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73.61.Ey III-V semiconductors
72.80.Ey III-V and II-VI semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Ion‐implanted extrinsic Ge photodetectors with extended cutoff wavelength

I. C. Wu, J. W. Beeman, P. N. Luke, W. L. Hansen, and E. E. Haller

Appl. Phys. Lett. 58, 1431 (1991); http://dx.doi.org/10.1063/1.105189 (3 pages) | Cited 9 times

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Far‐infrared properties of a two‐layer structure consisting of an ion‐implantation doped layer on a thin ultrapure slice of germanium have been studied. Photoresponse extends beyond the shallow impurity absorption edge at 120 μm to about 192 μm. Photoconductivity studies have been performed between 4.2 and 1.3 K. Detectors with an area of 1×1 mm2 have dark currents of less than 100 electrons/s at temperatures ≤1.3 K at a bias of 70 mV. A responsivity of 0.9 A/W and a noise equivalent power of 5×10−16 W/Hz1/2 have been measured using photons in a narrow band 99±0.5 μm.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
72.40.+w Photoconduction and photovoltaic effects
73.50.Pz Photoconduction and photovoltaic effects

Recrystallization of silicon amorphized by carbon implantation

Sopa Chevacharoenkul, John R. Ilzhoefer, Diego Feijóo, and Ulrich Gösele

Appl. Phys. Lett. 58, 1434 (1991); http://dx.doi.org/10.1063/1.105190 (3 pages) | Cited 5 times

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Implanting (100) silicon substrates with 35 keV carbon ions at a dose of 1.5×1016 cm−2 causes Si to amorphize from the surface to a depth of 133±3 nm. Upon annealing at 800 °C the amorphized material recrystallizes to polycrystalline and highly defective single‐crystal layers. An in situ annealing study of a cross‐sectional transmission electron microscope specimen reveals that the minimum temperature needed to recrystallize the amorphous material is 725±25 °C. At this temperature grains that grow from the substrate surface dominate the recrystallization process leading to the formation of polycrystalline layer.
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61.72.uf Ge and Si
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

High‐temperature operation (to 180  °C) of 0.98 μm strained single quantum well In0.2Ga0.8As/GaAs lasers

J. P. van der Ziel and Naresh Chand

Appl. Phys. Lett. 58, 1437 (1991); http://dx.doi.org/10.1063/1.105191 (3 pages) | Cited 11 times

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Graded refractive index In0.2Ga0.8As/GaAs strained single quantum well ridge lasers, emitting at 0.98 μm, have been grown by molecular beam epitaxy. For pulsed excitation, laser operation has been obtained up to 180 °C for 1016‐μm‐long lasers. This record high operating temperature results from a high T0=160 °C characteristic of these long lasers. Anomalous threshold current dependences on temperature are found for shorter lasers and are attributed to band filling at high current densities and a shift of the emission from the n=1 quantum level to the n=2 level.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Resonant tunneling of two‐dimensional electrons into one‐dimensional subbands of a quantum wire

A. Zaslavsky, D. C. Tsui, M. Santos, and M. Shayegan

Appl. Phys. Lett. 58, 1440 (1991); http://dx.doi.org/10.1063/1.105192 (3 pages) | Cited 17 times

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Liquid phase epitaxy regrowth on the edge of in situ cleaved substrates is employed to create a vertical two‐dimensional electron gas in a double‐barrier tunneling potential. Resonant tunneling of two‐dimensional electrons through one‐dimensional quantum wire subbands is unambiguously identified by negative differential resistance features in the transport characteristics. The bias positions of these features agree with simple tunneling theory estimates based on conservation laws and the calculated band alignment in the structure under bias.
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73.40.Gk Tunneling
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Crystal structure and superconductivity of (La,Sr)2CuO4/Sm2CuO4 superlattices prepared by excimer laser deposition

Hitoshi Tabata, Tomoji Kawai, and Shichio Kawai

Appl. Phys. Lett. 58, 1443 (1991); http://dx.doi.org/10.1063/1.105193 (3 pages) | Cited 14 times

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We have grown superlattices of (La,Sr)2CuO4/Sm2CuO4 [1/1 to 120/120] onto SrTiO3 substrates by an excimer laser deposition technique. These superlattices can be classified into three regions. For the short periodicity of the stacking up to 4/4, new structures are constructed having a large unit cell made of a CuO5 pyramid, CuO6 octahedral, and CuO4 sheet. For the large periodicity more than 60/60, the superlattices exhibit the same superconducting behavior as the standard (La,Sr)2CuO4. The superlattices of the intermediate periodicity, from 60/60 to 15/15 on the other hand, show changes in the critical temperature as the variation of the stacking periodicity. This phenomenon is explained to be derived from a pressure effect caused by a lattice mismatch between (La,Sr)2CuO4 and Sm2CuO4 layers.
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74.78.Fk Multilayers, superlattices, heterostructures
74.70.-b Superconducting materials other than cuprates
74.78.-w Superconducting films and low-dimensional structures

Elastoresistance tensor components for thick‐film resistors

Ahmed Amin

Appl. Phys. Lett. 58, 1446 (1991); http://dx.doi.org/10.1063/1.105194 (2 pages) | Cited 2 times

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The longitudinal M11, transverse M12, and hydrostatic Mh elastoresistance tensor components have been measured for thick‐film resistors as a function of temperature. The results are analyzed in terms of the spherical ∞/∞mm and conical ∞mm symmetry groups.
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72.15.Eb Electrical and thermal conduction in crystalline metals and alloys
72.20.Fr Low-field transport and mobility; piezoresistance
72.80.Jc Other crystalline inorganic semiconductors
72.80.Sk Insulators
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