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8 Apr 1991

Volume 58, Issue 14, pp. 1455-1568

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Size‐dependent electroabsorptive properties of semiconductor microcrystallites in glass

D. Cotter, H. P. Girdlestone, and K. Moulding

Appl. Phys. Lett. 58, 1455 (1991); http://dx.doi.org/10.1063/1.105195 (3 pages) | Cited 27 times

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Pronounced differences of behavior are seen in the electroabsorptive properties of semiconductor microcrystallites in glass, depending on their size. A rapid transition from confined ‘‘quantum‐dot’’ properties to well‐developed ‘‘bulk‐crystal’’ behavior is observed.
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78.20.Jq Electro-optical effects
42.70.Ce Glasses, quartz
81.05.Pj Glass-based composites, vitroceramics

Observation of highly nondegenerate four‐wave mixing (≳1 THz) in an InGaAsP multiple quantum well laser

S. Murata, A. Tomita, J. Shimizu, M. Kitamura, and A. Suzuki

Appl. Phys. Lett. 58, 1458 (1991); http://dx.doi.org/10.1063/1.105196 (3 pages) | Cited 27 times

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Highly nondegenerate four‐wave mixing (NDFWM) in the pump‐probe detuning region of more than 1 THz has been observed in an InGaAsP multiple quantum well laser for the first time. Each of the probe and signal frequencies is closed to cavity resonance modes for the pump laser and those outputs are enhanced. The highly NDFWM process is based on a mechanism whose response time is less than 0.2 ps.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.55.Px Semiconductor lasers; laser diodes

Highly efficient visible and infrared β‐BaB2O4 optical parametric oscillator with pump reflection

Yunping Wang, Zuyan Xu, Daoqun Deng, Wanhua Zheng, Xiang Liu, Baichang Wu, and Chuangtian Chen

Appl. Phys. Lett. 58, 1461 (1991); http://dx.doi.org/10.1063/1.105197 (3 pages) | Cited 12 times

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We report the successful operation of a highly efficient visible and near‐infrared optical parametric oscillator (OPO) that uses β‐BaB2O4 as the nonlinear medium and is pumped at 354.7 nm. An energy conversion efficiency of 41% corresponding to a quantum conversion efficiency as high as 57% has been achieved in a 10‐mm‐long crystal. Pump depletion is estimated to be 70% or so. This OPO can generate an average output power to 507 mW at 490 nm and can be continuously tuned from 415 to 2411 nm. The reverse frequency conversion process has also been observed in the OPO. The reason for its high efficiency is discussed.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Active‐passive mode‐locked Nd:YAG laser with a saturable absorber centered in a Fabry–Perot cavity

Jung Hwan Lee and Hong Jin Kong

Appl. Phys. Lett. 58, 1464 (1991); http://dx.doi.org/10.1063/1.105198 (3 pages)

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We have found that the use of a saturable dye cell, placed at the center of a Fabry–Perot cavity, produced more stable mode‐locked pulses without satellite pulses than a contacted dye cell configuration in active‐passive mode locking of a pulsed Nd:YAG laser. The mode‐locked pulse width was measured to be 23 ps and the energy stability of its frequency‐doubled output was within ±3%. The displacement of the dye cell position from the exact center of the cavity was found not to be critical.
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42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems
42.55.Rz Doped-insulator lasers and other solid state lasers

H− enhancement process in a multicusp ion source operated with a barium insert structure

K. N. Leung, C. F. A. van Os, and W. B. Kunkel

Appl. Phys. Lett. 58, 1467 (1991); http://dx.doi.org/10.1063/1.105199 (3 pages) | Cited 8 times

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It has been demonstrated that the H− output current from a small multicusp source can be substantially enhanced if the hydrogen plasma is seeded with barium. Operating with a barium washer insert at the extraction aperture, it is found that the extractable H− current is increased by a factor of 3 if the insert bias potential is optimized. By use of a mixture of xenon and hydrogen gas, it is further demonstrated that the positive hydrogen ions are responsible for the observed H− enhancement.
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29.25.Lg Ion sources: polarized
29.25.Ni Ion sources: positive and negative
52.20.Fs Electron collisions
34.70.+e Charge transfer
73.30.+y Surface double layers, Schottky barriers, and work functions

Pulsed laser deposition and ferroelectric characterization of bismuth titanate films

H. Buhay, S. Sinharoy, W. H. Kasner, M. H. Francombe, D. R. Lampe, and E. Stepke

Appl. Phys. Lett. 58, 1470 (1991); http://dx.doi.org/10.1063/1.105200 (3 pages) | Cited 93 times

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Stoichiometric films of bismuth titanate, Bi4Ti3O12, have been grown for the first time by the technique of pulsed excimer laser deposition. Ferroelectric films were obtained at temperatures as low as 500 °C on Si(100), MgO(110), and Pt‐coated Si(100) substrates. Hysteresis measurements using a Pt‐coated Si sample yielded a saturation polarization value of about 28 μC/cm2, consistent with a randomly oriented titanate film structure. A preliminary metal‐insulator‐semiconductor sandwich structure of the form Bi4Ti3O12‐CaF2(100 Å)‐Si was grown and used to examine polarization induced memory switching effects.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.61.Ng Insulators
77.80.B- Phase transitions and Curie point
77.55.-g Dielectric thin films

Antiferromagnetic interlayer exchange coupling in sputtered Fe/Cr multilayers: Dependence on number of Fe layers

S. S. P. Parkin, A. Mansour, and G. P. Felcher

Appl. Phys. Lett. 58, 1473 (1991); http://dx.doi.org/10.1063/1.105201 (3 pages) | Cited 35 times

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The antiferromagnetic arrangement of the magnetic moments of Fe layers in sputtered Fe/Cr multilayered structures is directly demonstrated from polarized neutron reflectometry studies. Such an antiferromagnetic interlayer exchange coupling is also consistent with magnetization studies on a series of [Fe/Cr]N structures. A remanent magnetization is observed for structures containing an odd number of bilayers but no remanent moment is found for an even number of bilayers. By examining the dependence of saturation field on the number of bilayers it is shown that the antiferromagnetic coupling strength is independent of the number of bilayers and is the same for superlattice and sandwich structures.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.50.Bb Fe and its alloys
75.50.Ee Antiferromagnetics

Cavity‐enhanced detection of surface photovaporization

E. C. Benck, Z. Rong, S. H. Chen, Z. C. Tang, and H. A. Schuessler

Appl. Phys. Lett. 58, 1476 (1991); http://dx.doi.org/10.1063/1.105246 (3 pages)

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Cavity‐enhanced detection is used to monitor minute vapor plumes produced by focusing a pulsed laser beam onto a surface placed inside a resonant optical cavity. The photovaporization signals from a variety of different materials are examined, with emphasis being placed on their amplitude and temporal structure.
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79.20.Ds Laser-beam impact phenomena
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Experimental evidence and interpretation of dopant–point defect pair diffusion

Marius Orlowski

Appl. Phys. Lett. 58, 1479 (1991); http://dx.doi.org/10.1063/1.105202 (3 pages) | Cited 3 times

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Experimental verification along with detailed simulation of up‐hill dopant diffusion in the vicinity of a damage layer consisting of dislocation loops is presented. The effect of dopant up‐hill diffusion, predicted on the basis of the so‐called dopant–point defect pair diffusion model, is explained by the additional dopant current driven by the gradient of point defect concentration. The gradient of point defects (self‐interstitials, in the present case) is caused by the strong absorption of self‐interstitials by dislocation loops in the damage layer. The present simulation of phosphorus diffusion in preamorphized silicon crystal shows that the pertinent phosphorus profiles, displaying the up‐hill diffusion, allow reliable extraction of parameters governing the coupled phosphorus and self‐interstitial diffusion dynamics. Three different derivations of the pair diffusion model are investigated. It is shown that the pair diffusion model is consistent with a derivation of transport equations from the master equation assuming that the elementary jump frequency Γ0 is enhanced locally by the presence of self‐interstitials according to Γ0(CI/C∗I). It is also shown that the same assumption made on the level of the final diffusion equation leads to incomplete formulation of the relevant dynamics.
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61.72.uf Ge and Si
61.72.jd Vacancies
61.72.jj Interstitials
61.72.Lk Linear defects: dislocations, disclinations

Influence of ballistic electrons on the device characteristics of vertically integrated resonant tunneling diodes

J. J. L. Rascol, K. P. Martin, R. E. Carnahan, R. J. Higgins, L. A. Cury, J. C. Portal, B. G. Park, E. Wolak, K. L. Lear, and J. S. Harris

Appl. Phys. Lett. 58, 1482 (1991); http://dx.doi.org/10.1063/1.105203 (3 pages) | Cited 5 times

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We present a systematic study of the ballistic electron contribution to the current‐voltage (I‐V) characteristics of vertically integrated resonant tunneling diodes (RTDs) separated by doped spacer layers (Wsp). A magnetic field (B) transverse to the tunneling direction was used to tune the electron’s longitudinal energy. The results confirm the isolated circuit element picture of the Wsp=1000 Å sample and the strongly coupled description of the 0 Å sample. This work shows that even for some nominally isolated RTDs (in this work for Wsp= 400 and 500 Å), the I‐V characteristics can undergo striking B‐induced changes. This effect is due to resonant charge buildup in the well of the collector RTD from the relatively weak ballistic component of the current traversing the doped spacer region. A simple model that includes a calculation of the conduction‐band profile and quantum well energy levels under bias gives good agreement with the data.
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73.40.Gk Tunneling
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ey III-V semiconductors
72.20.Ht High-field and nonlinear effects

Radiative properties of a highly excited quantum well

B. Deveaud, F. Clérot, K. Fujiwara, and K. Mitsunaga

Appl. Phys. Lett. 58, 1485 (1991); http://dx.doi.org/10.1063/1.105204 (3 pages) | Cited 8 times

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We study by time‐resolved luminescence, the radiative recombination from a single quantum well placed inside a graded confinement structure. We are able to produce a cold (T<50 K), high‐density (5×1011<N<5×1012 cm−2) plasma. We compare our spectra with usual lineshape fitting procedures and give evidence for the shortcomings of such an analysis. We detail the consequences of the present work for the determination of band‐gap renormalization, the conservation of k‐selection rule, and the measurement of the radiative recombination rate.
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78.55.-m Photoluminescence, properties and materials
78.47.-p Spectroscopy of solid state dynamics
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

New magnesium doping source for metalorganic chemical vapor deposition: Octamethyldialuminummonomagnesium

Ako Hatano, Toshihide Izumiya, and Yasuo Ohba

Appl. Phys. Lett. 58, 1488 (1991); http://dx.doi.org/10.1063/1.105179 (3 pages) | Cited 2 times

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Octamethyldialuminummonomagnesium (an adduct of trimethylaluminum and dimethylmagnesium) is proposed as an alternative candidate for an Mg doping source in metalorganic chemical vapor deposition. Water cooling for the reactor wall was important to prevent predecomposition of the adduct. Almost flat doping profiles were obtained independent of Mg concentration. Long doping tails were not observed. The doping efficiency was independent of substrate temperature between 600 and 700 °C, indicating a lower decomposition temperature for this Mg source. It was suggested that carrier concentration control can be improved by removing Si containing impurities from this Mg source.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.72.U- Doping and impurity implantation
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Raman scattering from InxGa1−xAs/GaAs strained‐layer superlattices

Chuanyong Wu, Pudong Lao, and S. C. Shen

Appl. Phys. Lett. 58, 1491 (1991); http://dx.doi.org/10.1063/1.105181 (3 pages) | Cited 7 times

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Measurements of room‐temperature Raman scattering were performed on InxGa1−xAs/GaAs strained‐layer superlattices, grown by molecular beam epitaxy, with superlattice periods of 230 Å and In concentration x values of 0.1 and 0.2. We use, for the first time, the ‘‘spatial correlation’’ model as well as the splitting mechanism of the corresponding Raman peaks to account for the line shape of the Raman peak around 291 cm−1.
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78.30.Fs III-V and II-VI semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
62.20.F- Deformation and plasticity

Use of methane in an electron cyclotron resonance plasma source for carbon delta‐doping in GaAs molecular beam epitaxy

D. S. L. Mui, K. R. Evans, S. F. Fang, D. Biswas, and H. Morkoç

Appl. Phys. Lett. 58, 1494 (1991); http://dx.doi.org/10.1063/1.105182 (3 pages) | Cited 2 times

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An electron cyclotron resonance (ECR) plasma source has been used with methane gas to perform carbon delta‐doping in GaAs grown by molecular beam epitaxy (MBE). The ECR plasma source is installed on a chemical vapor deposition chamber which is vacuum connected to a conventional MBE apparatus. Good surface morphologies, high sheet carrier densities (1–7×1012 cm−2), and reasonable hole mobilities (75–110 cm2/V s) are obtained.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.Dv Composition, segregation; defects and impurities
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Field‐induced resonant tunneling between parallel two‐dimensional electron systems

J. P. Eisenstein, L. N. Pfeiffer, and K. W. West

Appl. Phys. Lett. 58, 1497 (1991); http://dx.doi.org/10.1063/1.105157 (3 pages) | Cited 51 times

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Resonant tunneling between two high‐mobility two‐dimensional (2D) electron systems in a double quantum well structure has been induced by the action of an external Schottky gate field. Using one 2D electron gas as source and the other as drain, the tunnel conductance between them shows a strong resonance when the gate field aligns the ground subband edges of the two quantum wells.
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73.40.Gk Tunneling
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.30.+y Surface double layers, Schottky barriers, and work functions

Field‐effect transistors using alkyl substituted oligothiophenes

H. Akimichi, K. Waragai, S. Hotta, H. Kano, and H. Sakaki

Appl. Phys. Lett. 58, 1500 (1991); http://dx.doi.org/10.1063/1.105158 (3 pages) | Cited 112 times

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Field‐effect transistors (FETs) have been prepared using thin films of alkyl substituted oligothiophenes. These compounds bring about a significant increase in the source‐drain channel current when compared to the conventional nonsubstituted oligothiophenes. The increased channel current mostly results from the enhanced carrier mobility of the material. We report that the FETs are readily made by a single routine process of casting or evaporation.
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85.30.Tv Field effect devices
72.80.Le Polymers; organic compounds (including organic semiconductors)
61.66.Hq Organic compounds
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

High‐field electron transport in compensated GaAs

Ernest Y. Wu and Bernard H. Yu

Appl. Phys. Lett. 58, 1503 (1991); http://dx.doi.org/10.1063/1.105159 (3 pages) | Cited 6 times

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High‐field electron transport in compensated GaAs has been determined by Monte Carlo calculation for various compensation ratios at lattice temperatures of 77, 160, and 300 K. The velocity‐field characteristics exhibit two maxima at both low and high temperatures for several doping compensations. It is found that doping compensation has a stronger effect on electron transport at low temperatures than at high temperatures over a range of field values. As compared to InP, In0.53Ga0.47As, and Al0.25In0.75As, the negative differential mobilities and the high‐field velocities have been noticeably reduced by doping compensations. The origin of this unique two maxima feature in the velocity‐field relation for compensated GaAs has been discussed in comparison with other compensated semiconductors.
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72.20.Ht High-field and nonlinear effects
72.80.Ey III-V and II-VI semiconductors
72.10.Bg General formulation of transport theory

Raman scattering as a compositional probe of II‐VI ternary semiconductor nanocrystals

A. Tu and P. D. Persans

Appl. Phys. Lett. 58, 1506 (1991); http://dx.doi.org/10.1063/1.105160 (3 pages) | Cited 58 times

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We show how Raman optic‐mode peak positions and relative intensities can be used in a straightforward way to determine crystallite composition in CdSxSe1−x nanocrystals embedded in glass. These Raman techniques are particularly useful for low‐concentration or small‐crystallite‐size composites where x‐ray diffraction is not a viable technique for structural characterization of crystallites.
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78.30.Fs III-V and II-VI semiconductors
81.05.Pj Glass-based composites, vitroceramics

Coherent tunneling of mixed state hole wave packets in coupled quantum well structures

Vasu Sankaran and Jasprit Singh

Appl. Phys. Lett. 58, 1509 (1991); http://dx.doi.org/10.1063/1.105161 (3 pages) | Cited 4 times

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The time‐dependent Schrödinger equation is solved numerically to study the coherent tunneling of hole wave packets in asymmetric coupled quantum wells. The importance of selection rules and band mixing is evident in the extremely low rates of the wave‐packet leakage from heavy‐hole state to a resonant light‐hole state at zero in‐plane wave vector (k∥). But these rates increase dramatically away from k∥=0, when the hole states acquire mixed character, and rapidly become comparable to the heavy‐hole to heavy‐hole resonant tunneling rates. The effect of inhomogeneous level broadening arising from well size fluctuations in multicoupled quantum well systems is shown to greatly reduce the effective tunneling rates near resonance.
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73.40.Gk Tunneling
03.65.Ge Solutions of wave equations: bound states

Subpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayers

A. C. Warren, N. Katzenellenbogen, D. Grischkowsky, J. M. Woodall, M. R. Melloch, and N. Otsuka

Appl. Phys. Lett. 58, 1512 (1991); http://dx.doi.org/10.1063/1.105162 (3 pages) | Cited 72 times

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Using GaAs epilayers with arsenic precipitates (GaAs:As) as the photoconductive material in a broad‐band optoelectronic terahertz beam system, we have generated and detected freely propagating, subpicosecond electromagnetic pulses. The receiver signal gave a measured integrated pulse width of 0.71 ps. Fast photoconductive rise times have been achieved which are characteristic of good mobility GaAs. In addition, the material exhibits a short ‘‘effective’’ carrier lifetime of several ps due to the embedded, closely spaced (about 20 nm) arsenic precipitates.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.40.+w Photoconduction and photovoltaic effects
73.61.Ey III-V semiconductors
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Vertical‐cavity, room‐temperature stimulated emission from photopumped GaN films deposited over sapphire substrates using low‐pressure metalorganic chemical vapor deposition

M. Asif Khan, D. T. Olson, J. M. Van Hove, and J. N. Kuznia

Appl. Phys. Lett. 58, 1515 (1991); http://dx.doi.org/10.1063/1.105163 (3 pages) | Cited 81 times

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We report the first observation of near‐UV vertical‐cavity stimulated emission from a photopumped GaN epilayer at room temperature. The epilayer was deposited over AIN‐coated basal plane sapphire substrate using low‐pressure metalorganic chemical vapor deposition. Epitaxy quality of a 1.5‐μm‐thick GaN layer was high enough to achieve stimulated emission at room temperature. The observed near‐UV optical emission power was a nonlinear function of the pump power density. At threshold power density, we also observed line narrowing and a shift of the peak UV emission towards longer wavelengths. Data comparing the UV emission for the vertical‐cavity and the edge emission geometry are also presented.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.55.Cr III-V semiconductors

Ti‐implanted Bragg reflectors on LiNbO3:Ti stripe waveguides

S. Fouchet, F. R. Ladan, F. Huet, A. Carenco, M. Carre, and Y. Gao

Appl. Phys. Lett. 58, 1518 (1991); http://dx.doi.org/10.1063/1.105164 (3 pages) | Cited 2 times

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The first demonstration of Ti‐implanted Bragg reflectors on Ti‐indiffused LiNbO3 waveguides is reported here. A bandwidth of 7 Å, around 1.52 μm, with reflection coefficients ≳99%, has been achieved for TE polarization on X‐cut, Y‐propagating guides.
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42.79.Gn Optical waveguides and couplers
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Growth of heavily Be‐doped AlInP by gas source molecular beam epitaxy

T. Yokotsuka, A. Takamori, and M. Nakajima

Appl. Phys. Lett. 58, 1521 (1991); http://dx.doi.org/10.1063/1.105165 (3 pages) | Cited 3 times

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Heavily Be‐doped p‐type AlInP layers have successfully grown on (001)GaAs by gas source molecular beam epitaxy (GSMBE) using phosphine (PH3). Net hole concentration (Nh) as high as about 3.5×1018 cm−3 is achieved for the first time. The surface morphology is found to be smooth up to a Be concentration of 3×1019 cm−3. The resistivity for Nh=3.5×1018 cm−3 is as low as 0.3 Ω cm. The improvement of the electrical activity and surface morphology may be ascribed to subhidrides of phosphorus decomposed from PH3 during GSMBE growth.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
71.55.Eq III-V semiconductors
73.61.Ga II-VI semiconductors
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Effects of impurities Si and Be on the creation of Ga vacancies and Ga interstitials in GaAs grown by molecular beam epitaxy

Jong‐Lam Lee, Long Wei, Shoichiro Tanigawa, and Mitsuo Kawabe

Appl. Phys. Lett. 58, 1524 (1991); http://dx.doi.org/10.1063/1.105166 (3 pages) | Cited 4 times

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Two type of top layers, namely, undoped and Si‐doped GaAs layers, were grown, respectively, on a Be‐doped epilayer by molecular beam epitaxy, and the effects of impurities of Be and Si on the creation of Ga interstitials IGa and Ga vacancies VGa during the annealing of the specimens were investigated by a slow positron beam. The concentration of VGa created from the surface of the undoped GaAs during the annealing decreases drastically when the annealed GaAs was kept at room temperature for one month. This implies that the Be atoms diffusing to the undoped GaAs during the growth and/or the annealing cause the creation of IGa in the undoped layer and it makes the recombination with VGa. On the other hand, no decrease in the concentration of VGa was observed in the Si‐doped GaAs. These support the creation of IGa and of VGa, respectively, in the Be‐diffused GaAs and in Si‐diffused GaAs.
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61.72.jd Vacancies
61.72.jj Interstitials
66.30.J- Diffusion of impurities
78.30.Fs III-V and II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Energy states of finite‐barrier quantum wires in the presence of an external electric field

C. Juang and C. Y. Chang

Appl. Phys. Lett. 58, 1527 (1991); http://dx.doi.org/10.1063/1.105167 (3 pages) | Cited 9 times

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Energy level shift in finite‐barrier quantum wires systems is found to be enhanced in comparison to finite‐barrier single quantum well systems. The ground‐state solutions of the two‐dimensional Schrödinger equation are obtained using the inverse power method combined with the successive over relaxation method. In addition, the two‐dimensional changes in the wave function due to an external electric field in cylindrical quantum wires are presented.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
71.55.Eq III-V semiconductors
73.50.Fq High-field and nonlinear effects
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
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