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6 May 1991

Volume 58, Issue 18, pp. 1931-2044

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Improved performance of strained InGaAs/GaAs photodiodes grown on patterned GaAs substrates by molecular beam epitaxy

W. Q. Li, P. K. Bhattacharya, and R. L. Tober

Appl. Phys. Lett. 58, 1931 (1991); http://dx.doi.org/10.1063/1.105049 (3 pages) | Cited 9 times

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We have experimentally studied the photoresponse characteristics of strained InxGa1−xAs (0.05≤x≤0.20) p‐i‐n photodiodes grown in small holes etched in GaAs substrates where the thickness of the i region exceeds the critical thickness. The diodes exhibit enhanced quantum efficiency and no degradation of the temporal response compared with devices grown on planar substrates, indicating that reduced area growth may be a useful technique for making optoelectronic devices with strained‐layer structures.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.B- Structure of clean surfaces (and surface reconstruction)
85.60.-q Optoelectronic devices

Second‐harmonic generation device with integrated periodically domain‐inverted regions and distributed Bragg reflector in a LiNbO3 channel waveguide

K. Shinozaki, Y. Miyamoto, H. Okayama, T. Kamijoh, and T. Nonaka

Appl. Phys. Lett. 58, 1934 (1991); http://dx.doi.org/10.1063/1.105050 (3 pages) | Cited 16 times

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We propose a new structure of LiNbO3 guided wave second‐harmonic generation device, in which the fundamental light beam is sufficiently confined by two distributed Bragg reflectors (DBRs) formed at input and output ports. The 40% increase in the conversion compared with a conventional device without DBR was achieved under a quasi‐phase matching condition.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers

KTiOPxAs1−xO4 optical waveguides grown by liquid phase epitaxy

L. K. Cheng, J. D. Bierlein, and A. A. Ballman

Appl. Phys. Lett. 58, 1937 (1991); http://dx.doi.org/10.1063/1.105051 (3 pages) | Cited 4 times

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We report on a new type of optical waveguide based on the nonlinear optical material KTiOPO4 (KTP). Thin films of KTiOPxAs1−xO4 (5–50 μm) were grown on KTP substrates by liquid phase epitaxy using a tungstate flux. Energy‐dispersive x‐ray spectrometry reveals an abrupt increase in the arsenic concentration in the film, suggesting an abrupt, step‐like refractive index profile in these guides. Optical waveguiding at 0.633 μm was demonstrated in a 20‐μm‐thick KTiOP0.76As0.24O4 film grown on a {011} KTP substrate. The refractive index difference between the film and the substrate (Δn) was measured to be ∼0.012, which compares favorably with the value estimated from bulk crystal measurements of the end members. Variations in the design of these waveguides and several potential applications are discussed.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics

Subpicosecond reflection switching of 10 μm radiation using semiconductor surfaces

J. Meyer and A. Y. Elezzabi

Appl. Phys. Lett. 58, 1940 (1991); http://dx.doi.org/10.1063/1.105240 (3 pages) | Cited 3 times

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The electromagnetic wave equations for P‐polarized 10 μm radiation in a semiconductor with a free‐carrier density decreasing exponentially from the surface are solved numerically. The infrared (IR) reflectivity for Brewster angle incidence is then calculated as a function of free‐carrier surface density n0. This reflectivity shows a minimum of zero just below and a sharp peak at the value where n0 reaches its critical value. The features are explained with the help of a simple model. The results suggest the feasibility of a subpicosecond IR reflection switch for the case when the surface is irradiated by a 100 fs visible laser pulse. Solutions to the diffusion equation show that ensuing reflectivity decreases to zero in times shorter than 0.5 ps.
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72.20.Dp General theory, scattering mechanisms
78.47.-p Spectroscopy of solid state dynamics
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Parametric superfluorescence in KTiOPO4 crystals pumped by 1 ps pulses

Tadashi Nishikawa, Naoshi Uesugi, and Junji Yumoto

Appl. Phys. Lett. 58, 1943 (1991); http://dx.doi.org/10.1063/1.105052 (3 pages) | Cited 4 times

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Parametric superfluorescence in KTiOPO4 crystals pumped by 1 ps pulses is demonstrated using an amplified synchronous mode‐locked dye laser. The tuning range of the output pulses is from 0.93 to 1.59 μm. The maximum output power at the degenerate wavelength of 1.2 μm is 0.85 μJ, and a conversion efficiency of 9.9% is obtained. Height gain under phase mismatching broadens the spectral bandwidths of the output pulses.
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42.50.Nn Quantum optical phenomena in absorbing, amplifying, dispersive and conducting media; cooperative phenomena in quantum optical systems
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.70.-a Optical materials

Optically induced absorption modulation in a periodically δ‐doped InGaAs/GaAs multiple quantum well structure

A. Larsson and J. Maserjian

Appl. Phys. Lett. 58, 1946 (1991); http://dx.doi.org/10.1063/1.105027 (3 pages) | Cited 13 times

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Strong optically induced absorption modulation has been achieved in a periodically δ‐doped InGaAs/GaAs multiple quantum well structure. The use of δ‐doping has enabled efficient modulation in short‐period structures using a low‐power semiconductor laser. With an excitation intensity of 100 mW/cm2 we have measured an absolute quantum well absorption change of more than 9000 cm−1 corresponding to a differential absorption change as high as 58% at the excitonic resonance.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.79.Hp Optical processors, correlators, and modulators
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Monolithic InP/InGaAsP/InP grating spectrometer for the 1.48–1.56 μm wavelength range

J. B. D. Soole, A. Scherer, H. P. LeBlanc, N. C. Andreadakis, R. Bhat, and M. A. Koza

Appl. Phys. Lett. 58, 1949 (1991); http://dx.doi.org/10.1063/1.105028 (3 pages) | Cited 27 times

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We report a two‐dimensional grating spectrometer implemented in an InP/InGaAsP/InP planar waveguide for use in the low‐loss 1.5 μm wavelength fiber band. The spectrometer uses a single vertical‐walled focusing reflection grating to disperse 78 channels, spaced at 1 nm intervals, with diffraction‐limited resolution (∼0.3 nm) and a high channel isolation (≳19 dB). The spectrometer may be used such that it is insensitive to the state of the input polarization.
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07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
42.79.Dj Gratings

Strain‐compensated strained‐layer superlattices for 1.5 μm wavelength lasers

B. I. Miller, U. Koren, M. G. Young, and M. D. Chien

Appl. Phys. Lett. 58, 1952 (1991); http://dx.doi.org/10.1063/1.105029 (3 pages) | Cited 36 times

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Strain‐compensated strained‐layer multiple quantum well structures have been grown by introducing opposite strain into the barrier layers. Such structures show significant improvement in the photoluminescence spectra, i.e., narrower full width half maxima and stronger intensities. Lasers fabricated with such structures have exhibited low current thresholds (12 mA), high quantum efficiencies (28% per facet), which are constant over a wide current range.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.55.Cr III-V semiconductors
42.55.Px Semiconductor lasers; laser diodes
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Photochemical laser writing of polymeric optical waveguides

K. W. Beeson, K. A. Horn, M. McFarland, and J. T. Yardley

Appl. Phys. Lett. 58, 1955 (1991); http://dx.doi.org/10.1063/1.105030 (3 pages) | Cited 13 times

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We report a rapid one‐step laser writing process for forming optical channel waveguides by photochemically lowering the index of refraction in selected areas of thin, highly photosensitive polymeric flims. We have demonstrated the concept by forming single‐ and multimode waveguides in films composed of poly(methylmethacrylate) containing (4‐N‐N‐dimethylaminophenyl)‐N‐phenyl nitrone. The effects of ultraviolet fluence on the refractive index of the films and on channel lightwave confinement were examined. Low loss (1.5 dB/cm) channels were produced with ultraviolet fluences as low as 20 mJ/cm2.
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42.79.Gn Optical waveguides and couplers
78.66.Qn Polymers; organic compounds
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light

Polarization bistability in semiconductor lasers with intracavity multiple quantum well saturable absorbers

Y. Ozeki, John E. Johnson, and C. L. Tang

Appl. Phys. Lett. 58, 1958 (1991); http://dx.doi.org/10.1063/1.105031 (3 pages) | Cited 7 times

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Because the confinement of carriers in a quantum well constraints the crystal momentum of the carriers near the band edge to directions close to the well normal, the selection rules for conduction to heavy‐hole transitions yield a large anisotropy in the absorption cross section. We predict a new type of room‐temperature polarization bistability based upon this effect in a semiconductor laser with an intracavity multiple quantum well saturable absorber. Rate equation analyses of the static device characteristics as a function of various parameters are presented, and show that two‐mode bistable behavior with large hysteresis is possible over a broad range of conditions. Other modes of operation, including all‐optical switching and tristable operation, have been verified by numerical calculation.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Bonding by atomic rearrangement of InP/InGaAsP 1.5 μm wavelength lasers on GaAs substrates

Y. H. Lo, R. Bhat, D. M. Hwang, M. A. Koza, and T. P. Lee

Appl. Phys. Lett. 58, 1961 (1991); http://dx.doi.org/10.1063/1.105032 (3 pages) | Cited 78 times

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A technique, namely bonding by atomic rearrangement has been invented to realize high quality heteroepitaxy for lasers and optoelectronics. High performance lasers of 1.5 μm wavelength have been fabricated on GaAs substrates using this method. The laser has the same threshold current and quantum efficiency as lasers on InP substrates. No performance degradation has been observed. The transmission electron microscopic results show that the heteroepitaxy is excellent, without a single threading dislocation or stacking fault.
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85.60.-q Optoelectronic devices
85.60.Jb Light-emitting devices
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.35.Fx Diffusion; interface formation

Electro‐optic characterization of ion beam sputter‐deposited KNbO3 thin films

T. M. Graettinger, S. H. Rou, M. S. Ameen, O. Auciello, and A. I. Kingon

Appl. Phys. Lett. 58, 1964 (1991); http://dx.doi.org/10.1063/1.105033 (3 pages) | Cited 36 times

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The Electro‐optic properties of potassium niobate thin films deposited using a computer‐controlled ion beam sputtering technique have been studied for the first time. Epitaxial and polycrystalline films were deposited on single crystal magnesium oxide and highly (111) oriented films were deposited on sapphire for the study. All films exhibited a quadratic‐like dependence of birefringence shift on the applied electric field. The microstructure of the films and its relation to the observed electro‐optic properties is discussed.
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78.20.Jq Electro-optical effects
78.20.Fm Birefringence
78.66.-w Optical properties of specific thin films

Scalable high‐power optically pumped GaAs laser

H. Q. Le, S. Di Cecca, and A. Mooradian

Appl. Phys. Lett. 58, 1967 (1991); http://dx.doi.org/10.1063/1.105034 (3 pages) | Cited 8 times

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The use of disk geometry, optically pumped semiconductor gain elements for high‐power scalability and good transverse mode quality has been studied. A room‐temperature TEM00 transverse mode, external‐cavity GaAs disk laser has been demonstrated with 500 W peak‐power output and 40% slope efficiency, when pumped by a Ti:Al2O3 laser. The conditions for diode laser pumping are shown to be consistent with available power level.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems

Growth processes in molecular beam expitaxy of single‐crystal Al layers on AlAs

Hiroaki Nakahara, Hirofumi Matuhata, Yasumasa Okada, Tateki Kurosu, Masamori Iida, and Takafumi Yao

Appl. Phys. Lett. 58, 1970 (1991); http://dx.doi.org/10.1063/1.105035 (3 pages) | Cited 2 times

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The molecular beam epitaxial growth processes of Al single‐crystal layers deposited at room temperature on As‐stabilized and on Al‐stabilized AlAs surfaces are investigated in situ using reflection high‐energy electron diffraction (RHEED). The epitaxy relationship of Al with the underlying AlAs is (011)[100]Al//(001)[110]AlAs irrespective of the surface stoichiometry of AlAs. Detailed RHEED investigation suggests that the initially deposited two one‐monolayer‐thick Al layers form a sphalerite lattice on As‐(Al‐)stabilized AlAs with the same lattice spacing as AlAs, while the deposition of additional Al layers induces the structural phase transition from the sphalerite lattice to an fcc lattice with bulk Al lattice constant. Thick epitaxial Al layers show (4×1) surface reconstruction.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

Sulfur doping of GaAs and GaInP grown by metalorganic molecular beam epitaxy using a hydrogen sulfide gaseous source

Ph. Bove, J. Ch. Garcia, Ph. Maurel, and J. P. Hirtz

Appl. Phys. Lett. 58, 1973 (1991); http://dx.doi.org/10.1063/1.105036 (3 pages) | Cited 7 times

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We report in this letter the sulfur doping of GaAs and Ga0.5In0.5P layers grown by metalorganic molecular beam epitaxy using a 1000 ppm hydrogen sulfide diluted in hydrogen dopant source. No precracking of H2S molecules is necessary to achieve efficient doping. The n‐type doping level of both GaAs and Ga0.5In0.5P is proportional to the input H2S flow rate. Maximum doping levels of 8×1017 and 3×1018 cm−3 are measured in GaAs and Ga0.5In0.5P, respectively, with no saturation in either material within the doping range investigated. The doping level decreases as the growth temperature increases, with activation energies of 1.5 and 1.7 eV for GaAs and Ga0.5In0.5P, respectively. The sulfur incorporation decreases on increasing the V/III ratio in GaAs. The opposite behavior occurs in Ga0.5In0.5P.
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61.72.U- Doping and impurity implantation
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.03.Fg Evaporation and condensation of liquids

Tandem active layer superluminescent diode with a very wide spectrum

Yoshio Noguchi, Hiroshi Yasaka, and Osamu Mikami

Appl. Phys. Lett. 58, 1976 (1991); http://dx.doi.org/10.1063/1.105037 (3 pages) | Cited 2 times

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Broader spectral width superluminescent diodes having a new structure of tandem active layers are proposed and fabricated at a 1.3 μm wavelength. The emission spectral widths were successfully broadened over 100 nm, thus achieving a very short coherence length of less than 10 μm. Applying this new active layer structure to a Fabry–Perot cavity, a unique function of superluminescent/laser mode switching is also demonstrated.
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85.60.Dw Photodiodes; phototransistors; photoresistors
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.82.-m Integrated optics
85.60.Jb Light-emitting devices

Characterization of epitaxial GaAs and AlxGa1−xAs layers doped with oxygen

M. S. Goorsky, T. F. Kuech, F. Cardone, P. M. Mooney, G. J. Scilla, and R. M. Potemski

Appl. Phys. Lett. 58, 1979 (1991); http://dx.doi.org/10.1063/1.105038 (3 pages) | Cited 26 times

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Intentional oxygen doping (≳1017 cm−3) of GaAs and Al0.30Ga0.70As epitaxial layers was achieved during metalorganic vapor phase epitaxy through use of an oxygen‐bearing metalorganic precursor, dimethylaluminum methoxide (CH3)2AlOCH3. The incorporation of oxygen and very low levels of Al (AlAs mole fraction <0.005) in the GaAs layers leads to the compensation of intentionally introduced Si donors. Additionally, deep levels in GaAs associated with oxygen were detected. The introduction of dimethyl aluminum methoxide during AlxGa1−xAs growth did not alter Al mode fraction or degrade the crystallinity of the ternary layers, but did incorporate high levels of oxygen which compensated Si donors. The compensation in both GaAs and Al0.30Ga0.70As indicates that high resistivity buffer layers can be grown by oxygen doping during metalorganic vapor phase epitaxy.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
71.55.Eq III-V semiconductors
81.65.-b Surface treatments
61.72.U- Doping and impurity implantation

Visible light emission from semiconducting polymer diodes

D. Braun and A. J. Heeger

Appl. Phys. Lett. 58, 1982 (1991); http://dx.doi.org/10.1063/1.105039 (3 pages) | Cited 1209 times

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See Also: Erratum

Show Abstract
We report visible light emission from Shottky diodes made from semiconducting polymers, confirming the discovery by the Cambridge group [Nature 347, 539 (1990)]. Our results demonstrate that light‐emitting diodes can be fabricated by casting the polymer film from solution with no subsequent processing or heat treatment required. Electrical characterization reveals diode behavior with rectification ratios greater than 104. We propose that tunneling of electrons from the recitifying metal contact into the gap states of the positive polaron majority carriers dominates current flow and provides the mechanism for light emission.
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85.60.Jb Light-emitting devices
85.60.Dw Photodiodes; phototransistors; photoresistors
42.55.Px Semiconductor lasers; laser diodes
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Conductivity‐type inversion following low‐energy hydrogen implantation

Tian‐Qun Zhou, Zbigniew Radzimski, Bijoy Patnaik, George A. Rozgonyi, and Bhushan Sopori

Appl. Phys. Lett. 58, 1985 (1991); http://dx.doi.org/10.1063/1.105040 (3 pages) | Cited 3 times

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A surface conductivity‐type inversion has been observed following low‐energy (400 eV), high‐dose, hydrogen implantation of p‐type silicon. Detailed structural, chemical, and electrical examination of the surface revealed that the inversion resulted from hydrogen forming n‐type complexes with extended defects.
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73.25.+i Surface conductivity and carrier phenomena
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.80.Jh Ion radiation effects
61.72.uf Ge and Si

Molecular beam epitaxy and characterization of CdTe(211) and CdTe(133) films on GaAs(211)B substrates

M. D. Lange, R. Sporken, K. K. Mahavadi, J. P. Faurie, Y. Nakamura, and N. Otsuka

Appl. Phys. Lett. 58, 1988 (1991); http://dx.doi.org/10.1063/1.105041 (3 pages) | Cited 15 times

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CdTe films were grown in both the (211) and (133) orientations on GaAs(211)B substrates by molecular beam epitaxy. The orientation of the epitaxy is dependent on the thermal cleaning process. Studies of these films included in situ reflected high‐energy electron diffraction, x‐ray double‐crystal diffractometry, transmission electron microscopy, and photoluminescence, which revealed high quality for both CdTe growth orientations, and especially for the CdTe(133). The lattice of the CdTe(211) growth tilts 3° with respect to its GaAs(211) substrate about the CdTe[011]//GaAs[011] coincidence axis. The CdTe(133) has no tilt with respect to its substrate, and its coincidence axes are CdTe[011]//GaAs[011] and CdTe[611]//GaAs[111].
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
78.55.Et II-VI semiconductors

B doping using B2H6 in gas source Si molecular beam epitaxy

Hiroyuki Hirayama, Masayuki Hiroi, and Kazuhisa Koyama

Appl. Phys. Lett. 58, 1991 (1991); http://dx.doi.org/10.1063/1.105042 (3 pages) | Cited 3 times

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A new gas mixing system was devised for the control of a gaseous dopant during gas source Si molecular beam epitaxy. The performance of this gas mixing system was demonstrated using B2H6 gas dopant for B doping. B doping level control over five decades was successfully achieved. The B‐doping concentration was found to be proportional to the B2H6/Si2H6 flow rate ratio. This relationship holds in both the supply‐controlled and the reaction‐controlled growth regions. This result indicates that B2H6 is incorporated into epitaxial layers by a similar dissociative adsorption mechanism on Si2H6.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.uf Ge and Si
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Room‐temperature enhancement of electro‐optical modulation by resonance‐induced exciton mixing in a GaAs/AlAs superlattice

Harald Schneider and Klaus Ploog

Appl. Phys. Lett. 58, 1994 (1991); http://dx.doi.org/10.1063/1.105043 (3 pages) | Cited 6 times

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We report on room‐temperature absorption properties of a GaAs/AlAs short‐period superlattice in which, at certain electric fields perpendicular to the layers, different conduction subbands centered in adjacent and nonadjacent wells show a level repulsion and an anticrossing behavior. The associated mixing between the corresponding electron wave functions reduces the oscillator strengths and influences the transition energies of certain excitons. These electric field effects can be used to improve the performance of electro‐optical modulator devices. Our results also provide a method to investigate the high‐field coherence properties of charge carriers in superlattices.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Organometallic vapor phase epitaxy of AlGaAs/GaAs heterojunction bipolar transistors using tertiarybutylarsine

T. S. Kim, B. Bayraktaroglu, T. S. Henderson, and D. L. Plumton

Appl. Phys. Lett. 58, 1997 (1991); http://dx.doi.org/10.1063/1.105044 (3 pages) | Cited 5 times

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We have studied the use of tertiarybutylarsine (t‐BuAsH2) for organometallic vapor phase epitaxy (OMVPE) growth of AlGaAs/GaAs heterojunction bipolar transistors (HBTs). Good dc characteristics were achieved with t‐BuAsH2‐grown HBT structures, including common‐emitter current gains higher than 200 and 1000 for n‐p‐n and p‐n‐p structures, respectively. Near‐ideal current gain dependence on the collector current density was observed, indicating that the quality of AlGaAs was suitable for high‐performance HBTs. The microwave characteristics were also comparable to those of arsine‐grown HBTs. These results demonstrate that t‐BuAsH2 can successfully replace arsine for OMVPE growth of AlGaAs/GaAs HBT structures.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.30.Pq Bipolar transistors

Strain relief study concerning the InxGa1−xAs/GaAs (0.07<x<0.5) material system

V. Krishnamoorthy, P. Ribas, and R. M. Park

Appl. Phys. Lett. 58, 2000 (1991); http://dx.doi.org/10.1063/1.105045 (3 pages) | Cited 29 times

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The evolution of dislocations in the InxGa1−xAs/GaAs material system has been studied as a function of the ternary alloy comparison in the range 0.07<x<0.5. Cross‐sectional transmission electron microscope observations indicate that for x<0.18, threading dislocations are absent in the epilayer and dislocations propagate from the heterointerface into the GaAs material, while, for 0.18<x<0.28, dislocations appear to propagate into both the epilayer and the GaAs. Furthermore, for x ≳0.28, all the dislocations are observed in the epilayer while the GaAs appears to be dislocation‐free. We propose a model involving the balance of forces acting on misfit dislocations generated at the heterointerface which includes a surface image force term to explain our observations of dislocation evolution as a function of the ternary alloy composition.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.Yx Interaction between different crystal defects; gettering effect

Methane/hydrogen‐based reactive ion etching of InAs, InP, GaAs, and GaSb

James Werking, Jeff Schramm, Chanh Nguyen, Evelyn L. Hu, and Herbert Kroemer

Appl. Phys. Lett. 58, 2003 (1991); http://dx.doi.org/10.1063/1.105046 (3 pages) | Cited 22 times

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Reactive ion etching (RIE) of InAs, InP, GaAs, and GaSb using CH4/H2 mixtures has been studied to determine the resulting etch profiles and surface morphologies, as well as the dependence of etch rates on cathode temperature, chamber pressure, and electrode self‐bias. These materials are found to etch slowly and controllably, with etched samples having smooth surfaces and nearly vertical sidewalls. Our results demonstrate that CH4/H2 RIE is a promising technology for fabricating electronic devices using the newly emerging InAs/GaSb/AlSb material system as well as the better established InP material system.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
81.65.-b Surface treatments
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