Visible light emission from semiconducting polymer diodes

Braun, D.; Heeger, A. J.

doi:doi:10.1063/1.105039

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Applied Physics Letters / Volume 58 / Issue 18

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Appl. Phys. Lett. 58, 1982 (1991); http://dx.doi.org/10.1063/1.105039 (3 pages)

Visible light emission from semiconducting polymer diodes

D. Braun and A. J. Heeger

Institute for Polymers and Organic Solids, University of California at Santa Barbara, Santa Barbara, California 93106

(Received 6 December 1990; accepted 6 February 1991)

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Abstract

References (7)

Citing Articles (1196)

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We report visible light emission from Shottky diodes made from semiconducting polymers, confirming the discovery by the Cambridge group [Nature 347, 539 (1990)]. Our results demonstrate that light‐emitting diodes can be fabricated by casting the polymer film from solution with no subsequent processing or heat treatment required. Electrical characterization reveals diode behavior with rectification ratios greater than 10⁴. We propose that tunneling of electrons from the recitifying metal contact into the gap states of the positive polaron majority carriers dominates current flow and provides the mechanism for light emission.

ERRATUM

Erratum: Visible light emission from semiconducting polymer diodes [Appl. Phys. Lett. 58, 1982 (1991)]
D. Braun et al.
Appl. Phys. Lett. 59, 878 (1991)APPLAB000059000007000878000001

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KEYWORDS and PACS

Keywords

PHOTODIODES, SCHOTTKY BARRIER DIODES, ORGANIC POLYMERS, LIGHT EMITTING DIODES, FABRICATION, TUNNEL EFFECT, ELECTROLUMINESCENCE, PHOTOLUMINESCENCE

PACS

85.60.Jb

Light-emitting devices
85.60.Dw

Photodiodes; phototransistors; photoresistors
42.55.Px

Semiconductor lasers; laser diodes
85.30.Mn

Junction breakdown and tunneling devices (including resonance tunneling devices)

ARTICLE DATA

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http://dx.doi.org/10.1063/1.105039

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0003-6951 (print)

1077-3118 (online)

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J. H. Burroughes, D. D. C. Bradley, A. R. Brown, R. N. Marks, K. Mackay, R. H. Friend, P. L. Bums, and A. B. Holmes, Nature 347, 539 (1990).
F. Wudl, P.-M. Allemand, G. Srdanov, Z. Ni, and D. McBranch, Materials for Non-linear Optics.Chemieal Perspectives (1991) (unpublished).
H. Tomozawa, D. Braun, S. D. Phillips, R. Worland, A. J. Heeger, and H. Kroemer, Synth. Met. 28, C687 (1989). [Inspec] [ISI]
S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
T. W. Hagler, K. Pakbaz, J. Moulton, F. Wudl, P. Smith, and A. J. Heeger, Polym. Commun. (1991) (unpublished).
A. J. Heeger, S. Kivelson, J. R. Schrieffer, and W.-P. Su, Rev. Mod. Phys. 60, 781 (1988).
U. Rauscher, H. Bässler, D. D. C. Bradley, and M. Hennecke, Phys. Rev. B 42, 9830 (1990). [ISI] [MEDLINE]