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6 May 1991

Volume 58, Issue 18, pp. 1931-2044

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Growth of GaInAsP using ethyldimethylindium and tertiarybutylphosphine

P. R. Sharps, M. L. Timmons, and T. S. Colpitts

Appl. Phys. Lett. 58, 2006 (1991); http://dx.doi.org/10.1063/1.105022 (3 pages) | Cited 3 times

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The growth of GaInAsP lattice matched to GaAs by organometallic vapor phase epitaxy using ethyldimethylindium and tertiarybutylphosphine is reported for the first time. The composition of the films is approximately Ga0.87In0.13As0.75P0.25, giving a band gap of about 1.52 eV. Intrinsic films are n type. Both n‐ and p‐type doped layers have been prepared. Photoluminescence measurements on intrinsic films give spectral half widths of about 70 meV. Capping the films with AlGaAs window layers and using n+‐n, high‐low junctions at the GaInAsP/GaAs interface greatly improve the photoluminescent properties. A minority‐carrier lifetime of 35 ns in an intrinsic film has been measured and suggests that the quaternary is equivalent to AlGaAs with the same band gap.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.Ey III-V semiconductors
78.55.Cr III-V semiconductors

Current gain enhancement in bipolar transistors by low‐energy ion beam modification of the polycrystalline silicon emitter

B. Jalali, C. A. King, G. S. Higashi, J. C. Bean, R. Hull, Y.‐F. Hsieh, J. Macaulay, and J. M. Poate

Appl. Phys. Lett. 58, 2009 (1991); http://dx.doi.org/10.1063/1.105023 (3 pages) | Cited 2 times

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The current gain of polycrystalline silicon emitter transistors has been improved by modification of the polycrystalline silicon/silicon interface using a low‐energy ion beam. The base current is reduced by a factor of 3 while maintaining ideal current‐voltage characteristics. No change in the collector current and the emitter series resistance is observed.
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61.72.uf Ge and Si
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Pq Bipolar transistors
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

High‐efficiency InGaP light‐emitting diodes on GaP substrates

L. J. Stinson, J. G. Yu, S. D. Lester, M. J. Peanasky, and Kwang Park

Appl. Phys. Lett. 58, 2012 (1991); http://dx.doi.org/10.1063/1.105024 (3 pages) | Cited 26 times

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Very high brightness In(x)Ga(1−x)P light‐emitting diodes (LEDs) have been fabricated on GaP substrates by hydride vapor phase epitaxy. LEDs operating at wavelengths from 650 nm (red) to 565 nm (green) have been demonstrated. The brightest encapsulated lamps emit at 592 nm and have external quantum efficiencies of 0.9%. These LEDs are the brightest yet reported for this material system and are several times brighter than commercially available GaAsP:N diodes. A device structure is described that minimizes self‐absorption and is critical to obtaining these high‐brightness emitters. Reliability studies show greatly improved light output stability over GaAsP:N LEDs through 1000 h of operation between −55 and +55 °C.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
85.30.Kk Junction diodes

Recombination‐enhanced impurity diffusion in Be‐doped GaAs

Masashi Uematsu and Kazumi Wada

Appl. Phys. Lett. 58, 2015 (1991); http://dx.doi.org/10.1063/1.105025 (3 pages) | Cited 33 times

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Recombination‐enhanced impurity diffusion (REID) in Be‐doped GaAs has been observed for the first time. Current‐induced degradation of tunnel diodes has been investigated. The Be diffusion under forward bias is enhanced by a factor of about 1015 at room temperature, and the activation energy for the diffusion is reduced from 1.8 eV for thermal diffusion to 0.6 eV for REID. The RElD of Be, in which the energy released on minority‐carrier injection at the recombination center could enhance the diffusion, is thought to be the origin of the degradation.
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66.30.J- Diffusion of impurities
61.72.U- Doping and impurity implantation
71.55.Eq III-V semiconductors
85.30.Kk Junction diodes

GaAs tetrahedral quantum dot structures fabricated using selective area metalorganic chemical vapor deposition

T. Fukui, S. Ando, Y. Tokura, and T. Toriyama

Appl. Phys. Lett. 58, 2018 (1991); http://dx.doi.org/10.1063/1.105026 (3 pages) | Cited 77 times

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New GaAs quantum dot structures, called tetrahedral quantum dots (TQDs), are proposed to make a zero‐dimensional electron‐hole system. The TQDs are surrounded by crystallographic facets fabricated using selective area metalorganic chemical vapor deposition (MOCVD) on (111)B GaAs substrates. The calculated energy sublevel structures of zero‐dimensional electrons in a GaAs TQD show large quantum size effects, because electrons are confined three dimensionally. GaAs and AlGaAs tetrahedral facet structures on (111)B GaAs substrates partially etched into a triangular shape were grown using MOCVD. Tetrahedral growth with {110} facets occurs in the triangular areas. The cathodoluminescence intensity map for GaAs tetrahedrons buried in AlGaAs shows the tetrahedral dot array.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.55.Cr III-V semiconductors
73.61.Ey III-V semiconductors
72.80.Ey III-V and II-VI semiconductors

Novel metalorganic chemical vapor deposition system for GaN growth

Shuji Nakamura, Yasuhiro Harada, and Masayuki Seno

Appl. Phys. Lett. 58, 2021 (1991); http://dx.doi.org/10.1063/1.105239 (3 pages) | Cited 109 times

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A novel metalorganic chemical vapor deposition (MOCVD) system, which has two different flows, has been developed. One flow carries a reactant gas parallel to the substrate, and the other an inactive gas perpendicular to the substrate for the purpose of changing the direction of the reactant gas flow. The growth of a GaN film was attempted using this system, and a high quality, uniform film was obtained over a 2 in. sapphire substrate. The carrier concentration and Hall mobility are 1×1018/cm3 and 200 cm2/V s, respectively, which are the highest for GaN films grown directly on a sapphire substrate by the MOCVD method.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.Ey III-V semiconductors

InGaAs/InP long wavelength quantum well infrared photodetectors

S. D. Gunapala, B. F. Levine, D. Ritter, R. Hamm, and M. B. Panish

Appl. Phys. Lett. 58, 2024 (1991); http://dx.doi.org/10.1063/1.105001 (3 pages) | Cited 59 times

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We demonstrate the first long‐wavelength quantum well infrared detector using the lattice‐matched In0.53Ga0.47As/InP materials system. The responsivity has been found to be larger than that for similar GaAs/AlxGa1−xAs detectors.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
72.40.+w Photoconduction and photovoltaic effects
73.50.Pz Photoconduction and photovoltaic effects
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Ceramic layer epitaxy by pulsed laser deposition in an ultrahigh vacuum system

Hideomi Koinuma, Hirotoshi Nagata, Tadashi Tsukahara, Satoshi Gonda, and Mamoru Yoshimoto

Appl. Phys. Lett. 58, 2027 (1991); http://dx.doi.org/10.1063/1.105002 (3 pages) | Cited 51 times

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Ceramic layer epitaxy, defined as the epitaxial growth of ceramic thin films with thicknesses regulated on an atomic scale, was verified by a new method using pulsed laser deposition in ultrahigh vacuum (UHV). The intensity oscillation of reflection high‐energy electron diffraction (RHEED) was observed in an ArF excimer laser deposition of CeO2 and SrTiO3 films on Si(111) and SrTiO3(001) substrates, respectively, at 650–750 °C under 5×10−7 Pa. The oscillation periodicities corresponded well to interplane distances of CeO2(111) and SrTiO3(001). This first observation of RHEED oscillation in laser deposition of ceramic films suggests that UHV laser deposition is a promising method for producing atomically regulated ceramic layers inclusive of possible new high Tc superconductors.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Use of high‐temperature superconductors for resonators of far‐infrared p‐germanium lasers

A. V. Bespalov, P. T. Lang, J. Betz, and K. F. Renk

Appl. Phys. Lett. 58, 2030 (1991); http://dx.doi.org/10.1063/1.105003 (3 pages) | Cited 5 times

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We report for the first time on the use of high‐temperature superconductor material for fabricating a resonator of a far‐infrared solid‐state laser. In our experiment the active medium consisted of a p‐germanium crystal at 4.2 K in crossed electric and magnetic fields. We used a SrTiO3 plate as highly reflecting mirror and a YBa2Cu3O7−δ thin films on an MgO plate as output coupling mirror. We demonstrate highly reproducible operation of the laser.
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74.70.-b Superconducting materials other than cuprates
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
74.78.-w Superconducting films and low-dimensional structures
42.55.Px Semiconductor lasers; laser diodes

Mixed‐state behavior in large magnetic fields of high‐temperature superconducting films prepared by metalorganic deposition

Paul C. McIntyre, Michael J. Cima, Donald H. Liebenberg, and Thomas L. Francavilla

Appl. Phys. Lett. 58, 2033 (1991); http://dx.doi.org/10.1063/1.105004 (3 pages) | Cited 8 times

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Films of Ba2YCu3O7−x prepared by metalorganic deposition (MOD) are demonstrated to have large critical current densities in high magnetic fields. The current‐voltage (I‐V) characteristics are reported for an MOD film in applied fields from 0 to 6 T at 77 K. The zero field critical current density was 600 000 A/cm2 and fell to 60 000 A/cm2 at 1 T. The critical current is approximately proportional to 1/H1/2. The variation in I‐V curves above the critical current indicates the voltage has a power law behavior with values for the current exponent varying from 5.2 to 1.7 for magnetic fields from 0 to 6 T.
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74.78.-w Superconducting films and low-dimensional structures
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
74.70.-b Superconducting materials other than cuprates
74.25.Sv Critical currents

In situ preparation of superconducting Y1Ba2Cu3O7−δ thin films by on‐axis rf magnetron sputtering from a stoichiometric target

C. Blue and P. Boolchand

Appl. Phys. Lett. 58, 2036 (1991); http://dx.doi.org/10.1063/1.105005 (3 pages) | Cited 11 times

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Superconducting Y1Ba2Cu3O7−δ thin films have been fabricated in situ by on‐axis rf reactive magnetron sputtering from a single stoichiometric 1‐2‐3 target. By using high total sputtering pressures (≳400 mTorr) and low oxygen pressures (≤10 mTorr), negative ion resputtering is almost eliminated and high quality oriented films on (100)MgO are realized with excellent reproducibility. Such films display zero resistance Tc’s as high as 88 K with transition widths ΔTc (90%–10%) of about 2 K, residual resistivity ratios R(300 K)/R(100 K) of 2.5, and critical current densities greater than 106 A/cm2 at 14 K.
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81.15.Cd Deposition by sputtering
74.78.-w Superconducting films and low-dimensional structures
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.70.-b Superconducting materials other than cuprates

Layer‐by‐layer epitaxial growth of a Bi2Sr2CuO6 thin film on a Bi2Sr2CaCu2O8 single crystal

Takuya Matsumoto, Tomoji Kawai, Katsuki Kitahama, Shichio Kawai, Ichiro Shigaki, and Yoshio Kawate

Appl. Phys. Lett. 58, 2039 (1991); http://dx.doi.org/10.1063/1.105006 (3 pages) | Cited 15 times

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The epitaxial growth of a Bi2Sr2CuO6 (2201) thin film on a Bi2Sr2CaCu2O8 (2212) single crystal has been performed using computer‐controlled laser molecular beam epitaxy. The surface of the 2212 single crystal used as the substrate is smooth and invariant under the growth condition at 640 °C in NO2 pressure of 1×10−5 mbar. The growth process of the 2201 film has been observed by in situ reflection high‐energy electron diffraction (RHEED), and the layer‐by‐layer growth of the 2201 phase is confirmed by the oscillation of RHEED intensities. During the growth, a modulated surface structure which is characteristic of the Bi cuprate crystals is always present.
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74.70.-b Superconducting materials other than cuprates
74.78.-w Superconducting films and low-dimensional structures
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Magnetocrystalline anisotropies of RTiFe11Nx compounds

Ying‐chang Yang, Xiao‐dong Zhang, Lin‐shu Kong, Qi Pan, and Sen‐lin Ge

Appl. Phys. Lett. 58, 2042 (1991); http://dx.doi.org/10.1063/1.105007 (3 pages) | Cited 59 times

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We have discovered that the rare‐earth–iron intermetallics of the type RTiFe11 can absorb moderate quantities of nitrogen at 500 °C, giving the approximate composition RTiFe11N0.5 at 1 atm. X‐ray diffraction showed that the tetragonal structure (I4/mmm) is retained but that the unit cell volume is slightly increased. More significantly, profound change of magnetocrystalline anisotropy have occurred upon the absorption of nitrogen. In this letter, we report the lattice parameters and magnetocrystalline anisotropic properties of RTiFe11Nx compounds.
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75.30.Gw Magnetic anisotropy
75.30.Cr Saturation moments and magnetic susceptibilities
75.50.Bb Fe and its alloys
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