APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

13 May 1991

Volume 58, Issue 19, pp. 2055-2182

Page 1 of 2 Pages Next Page | Jump to Page

130 ps recovery of all‐optical switching in a GaAs multiquantum well directional coupler

P. LiKamWa, A. Miller, J. S. Roberts, and P. N. Robson

Appl. Phys. Lett. 58, 2055 (1991); http://dx.doi.org/10.1063/1.105008 (3 pages) | Cited 23 times

Full Text: | Download PDF

Show Abstract
A significantly improved recovery time of 130 ps has been achieved in an all‐optical zero‐gap directional coupler containing multiple quantum wells. The mechanism for the all‐optical switching is due to free‐carrier induced refractive nonlinearities at near‐band‐gap resonant frequencies. The large reduction in the switch recovery time was obtained by the application of an external dc bias which sweeps out the carriers from the quantum wells. From our experimental results on the laser pulse width limited switch‐up time of 2 ps, we <m1;&37>deduce that the contribution of self‐electro‐optic effect nonlinearity is negligible in this case.
Show PACS
42.79.Gn Optical waveguides and couplers
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Index‐guided operation in narrow stripe InGaAs‐GaAs strained‐layer quantum well heterostructure lasers by MeV oxygen implantation

J. J. Alwan, J. Honig, M. E. Favaro, K. J. Beernink, J. L. Klatt, R. S. Averback, J. J. Coleman, and R. P. Bryan

Appl. Phys. Lett. 58, 2058 (1991); http://dx.doi.org/10.1063/1.105009 (3 pages)

Full Text: | Download PDF

Show Abstract
Stable index‐guided operation of variable stripe strained‐layer InGaAs‐GaAs‐AlGaAs lasers achieved by MeV oxygen implantation‐induced disorder of the active region is demonstrated. Well‐behaved near‐ and far‐field patterns for lasers implanted with 5×1016 cm−2 and 1×1017 cm−2 oxygen are observed to be stable with increasing drive current. Comparison with unimplanted, oxide‐defined stripe lasers fabricated from the same wafer indicates a dramatic improvement in emission characteristics as a result of the presence of a lateral real‐index waveguide in the oxygen‐disordered regions which is stronger than the carrier‐induced antiguide present in unimplanted InGaAs‐GaAs strained‐layer lasers.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
61.72.U- Doping and impurity implantation
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Generation of 27 fs pulses of 70 kW peak power at 80 MHz repetition rate using a cw self‐pulsing Ti:sapphire laser

J. P. Likforman, G. Grillon, M. Joffre, C. Le Blanc, A. Migus, and A. Antonetti

Appl. Phys. Lett. 58, 2061 (1991); http://dx.doi.org/10.1063/1.105010 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
We have built a self‐mode‐locked Ti:sapphire cw oscillator delivering up to 2 W of average output power. This oscillator provides 100 fs pulses tunable in the 770–807 nm range. Using a fiber‐prism compressor at the cavity output, the pulses have been compressed down to 27 fs at 785 nm, while keeping 200 mW average power.
Show PACS
42.55.Rz Doped-insulator lasers and other solid state lasers
42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

Picosecond dynamics in gain‐switched uncoupled and coupled quantum well lasers

T. Sogawa and Y. Arakawa

Appl. Phys. Lett. 58, 2064 (1991); http://dx.doi.org/10.1063/1.105011 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
We experimentally demonstrate the importance of two‐dimensional carrier confinement for picosecond dynamics in gain‐switched quantum well lasers, measuring time‐resolved spectra of gain‐switched quantum well (QW) lasers with coupled QWs and uncoupled QWs. The result indicates that an extremely short pulse (<2 ps) is generated in the uncoupled QW lasers. On the other hand, the pulse duration is about 10 ps in the coupled QW lasers in which the two‐dimensional confinement effect is significantly reduced owing to the miniband formation. These results demonstrate the importance of the two‐dimensional confinement of carriers for the short pulse generation in the semiconductor lasers. The measured dynamic spectral shift of the gain‐switched QW lasers also confirm the significant role of the two‐dimensional carrier confinement.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Robust infrared gratings in photorefractive quantum wells generated by an above‐band‐gap laser

D. D. Nolte, Q. Wang, and M. R. Melloch

Appl. Phys. Lett. 58, 2067 (1991); http://dx.doi.org/10.1063/1.105012 (3 pages) | Cited 11 times

Full Text: | Download PDF

Show Abstract
Probe beam intensities more than an order of magnitude larger than pump beam intensities do not erase photorefractive gratings during nondegenerate four‐wave mixing in photorefractive GaAs/AlGaAs quantum wells. The pump and probe laser wavelengths are absorbed in spatially separated regions of the multilayer structure. The photoconductivity of a probe beam around 840 nm is confined to the GaAs quantum wells and cannot easily erase the trapped space‐charge gratings in the AlGaAs barriers written by an above‐band‐gap HeNe laser at 633 nm. This allows a weak visible control beam to modulate a strong infrared signal beam.
Show PACS
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.20.Jq Electro-optical effects
73.50.Pz Photoconduction and photovoltaic effects

Watt‐range, coherent, uniphase powers from phase‐locked arrays of antiguided diode lasers

D. Botez, M. Jansen, L. J. Mawst, G. Peterson, and T. J. Roth

Appl. Phys. Lett. 58, 2070 (1991); http://dx.doi.org/10.1063/1.105013 (3 pages) | Cited 31 times

Full Text: | Download PDF

Show Abstract
Twenty‐element near‐resonant AlGaAs/GaAs arrays of antiguides have been optimized for maximum intermodal discrimination and large Strehl ratio. It is found that 1000‐μm‐long devices with two intracavity Talbot‐type spatial filters, and a 3 to 1 ratio between element core and interelement spacing provide the best results. The intermodal discrimination is discussed for both Talbot and uniform devices. For devices with two Talbot‐type spatial filters, diffraction‐limited‐beam operation is obtained to 1 W pulsed power, and operation in a beam with lobewidth 1.5× diffraction limit is obtained to 2 W and 19× threshold. cw diffraction‐limited‐beam operation is obtained to 0.5 W, limited by thermal considerations. Uniform devices operate in beams with lobewidth ≊3× diffraction limit to 5 W and 45× threshold. At 5 W total output the coherent uniphase power is 1.6 W, and the coherent power in the main lobe is 0.94 W.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking
07.60.-j Optical instruments and equipment
42.79.-e Optical elements, devices, and systems

Optical switching and optical logic in a thermally expanding Si étalon

S. T. Feng and E. A. Irene

Appl. Phys. Lett. 58, 2073 (1991); http://dx.doi.org/10.1063/1.105014 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
Optical switching in a thermally expanding Si étalon has been demonstrated. In this experiment a pulsed CO2 laser beam is used to heat a Si étalon and shift the interference fringe of a 1.5 μm probe beam. It is shown that the switching time can be greatly reduced from ms to μs by choosing a probe beam of shorter wavelength in an external switching configuration. By aligning one étalon at switch‐on and another at switch‐off, we have demonstrated a write and erase logic system.
Show PACS
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.79.Hp Optical processors, correlators, and modulators
42.65.Pc Optical bistability, multistability, and switching, including local field effects
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects

Wavelength switching in narrow oxide stripe InGaAs‐GaAs‐AlGaAs strained‐layer quantum well heterostructure lasers

K. J. Beernink, J. J. Alwan, and J. J. Coleman

Appl. Phys. Lett. 58, 2076 (1991); http://dx.doi.org/10.1063/1.105015 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
We have observed current‐controlled wavelength switching in narrow oxide stripe In0.17Ga0.83As‐GaAs‐Al0.20Ga0.80As strained‐layer single quantum well heterostructure lasers. Laser emission switches from the lowest (n=1) quantized state transition in the quantum well at low currents to the first excited state transition (n=2) at higher currents, with an energy difference of ≊50 meV. For currents near the switching point, we have also observed time‐dependent lasing behavior, with a switch in the laser emission from the n=1 to the n=2 transition. The order of this temporal switching (from n=1 to n=2) is opposite that observed in narrow stripe gain‐guided GaAs‐AlGaAs quantum well lasers, due to strong antiguiding in InGaAs lasers, which negates the effect of a thermal guide.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
78.45.+h Stimulated emission
85.60.Jb Light-emitting devices
42.55.Rz Doped-insulator lasers and other solid state lasers

Aluminum oxide thin films prepared by chemical vapor deposition from aluminum 2‐ethylhexanoate

Toshiro Maruyama and Tsuyoshi Nakai

Appl. Phys. Lett. 58, 2079 (1991); http://dx.doi.org/10.1063/1.105016 (2 pages) | Cited 24 times

Full Text: | Download PDF

Show Abstract
Aluminum oxide thin films were prepared by a low‐temperature atmospheric‐pressure chemical vapor deposition method. The raw material was aluminum 2‐ethylhexanoate, which is nontoxic and easy to handle. At a reaction temperature above 480 °C, an amorphous film can be obtained on glass and silicon (100) substrates. The reaction temperature and the deposition rate are comparable to the corresponding values in the low‐temperature chemical vapor depositions of Al2O3. In addition, the deposition can be carried out in air. Aluminum 2‐ethylhexanoate appears to offer a viable alternative to alkylaluminum, aluminum β‐diketonate, and alkoxide for low‐temperature Al2O3 production.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Surface‐stress‐induced structure and elastic behavior of thin films

D. Wolf

Appl. Phys. Lett. 58, 2081 (1991); http://dx.doi.org/10.1063/1.105017 (3 pages) | Cited 24 times

Full Text: | Download PDF

Show Abstract
Computer simulations of unsupported (111), (001), and (011) thin films of gold, using an embedded‐atom‐method potential, demonstrate a direct correlation between the bulk‐surface stress and the film dimensions. The considerably more complex elastic behavior, by contrast, appears to be dominated by the atomic structure of the film surfaces, and not by the stress‐induced anisotropic lattice parameter changes.
Show PACS
62.20.D- Elasticity
68.35.Gy Mechanical properties; surface strains
68.55.-a Thin film structure and morphology
68.35.Md Surface thermodynamics, surface energies

New method for the evaluation of brittleness in ceramics

Yoshitake Nishi, Tatsuo Katagiri, Takehide Yamano, Fumiyuki Kanai, Nobuyuki Ninomiya, Satoshi Uchida, Kazuya Oguri, Tadae Morishita, Takashi Endo, and Mamoru Kawakami

Appl. Phys. Lett. 58, 2084 (1991); http://dx.doi.org/10.1063/1.105018 (3 pages) | Cited 12 times

Full Text: | Download PDF

Show Abstract
Using Vickers indentation method, plastic deformation (Ef) is suggested to be a convenient measurement to determine the ductility (brittleness) of brittle new materials. It was found that Ef is related empirically to KIC and GIC through a logarithmic linear relationship.
Show PACS
62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep
81.70.-q Methods of materials testing and analysis

High deposition rate laser direct writing of Al on Si

H. W. Lee and S. D. Allen

Appl. Phys. Lett. 58, 2087 (1991); http://dx.doi.org/10.1063/1.105019 (3 pages) | Cited 18 times

Full Text: | Download PDF

Show Abstract
We report, for the first time, the direct write laser patterning of highly conductive Al from a liquid precursor, triisobutylaluminum (TIBA). Al wires were written on Si with a scanned Ar+ laser from liquid TIBA at speeds of up to several mm/s. Wires 3 μm wide by 1 μm high with a resistivity of 5.6 μΩ cm were routinely achievable.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.05.Bx Metals, semimetals, and alloys
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Direct imaging of Si incorporation in GaAs masklessly grown on patterned Si substrates

M. Grundmann, J. Christen, D. Bimberg, A. Hashimoto, T. Fukunaga, and N. Watanabe

Appl. Phys. Lett. 58, 2090 (1991); http://dx.doi.org/10.1063/1.105020 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
The lateral variation of the emission energy of GaAs masklessly grown on V‐grooved Si is imaged with cathodoluminescence wavelength imaging. This newly developed unique experimental approach allows, for the first time, to directly visualize and quantify the extreme homogeneity of this novel growth mode and the lateral variation of Si impurity incorporation in such semiconductor microstructures. It represents an essential characterization tool for micropatterned optoelectronic monolithic integrated circuits.
Show PACS
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.60.Hk Cathodoluminescence, ionoluminescence
07.60.-j Optical instruments and equipment
81.65.-b Surface treatments

Low Au content thermally stable NiGe(Au)W ohmic contacts to n‐type GaAs

Naftali Lustig, Masanori Murakami, Maurice Norcott, and Kevin McGann

Appl. Phys. Lett. 58, 2093 (1991); http://dx.doi.org/10.1063/1.105021 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
Thermally stable low‐resistance ohmic contacts to n‐type GaAs incorporating a very thin layer of Au in conjunction with a layered Ni/Ge/W structure are reported. A minimum contact resistance of 0.16 Ω mm was obtained for contacts annealed at ∼650 °C. The contact resistance was ∼0.3 Ω mn after thermal stressing at 400 °C for 20 h. Cross‐sectional transmission electron microscopy reveals a uniformly reacted layer only ∼34 nm deep, making these contacts significantly shallower and more homogeneous than eutectic‐based AuGeNi contacts. X‐ray diffraction shows the presence of NiGe, β‐AuGa, and W phases in the reacted contacts. The volume fraction of the low melting point β‐AuGa phase is considerably reduced from that reported for eutectic‐based AuGeNi contacts. This, along with the presence of the high melting point NiGe compound, explains in part the improved thermal stability and morphology of the low Au content ohmic contacts.
Show PACS
73.40.Cg Contact resistance, contact potential
73.40.Ns Metal-nonmetal contacts

Low‐temperature selective epitaxy by ultrahigh‐vacuum chemical vapor deposition from SiH4 and GeH4/H2

M. Racanelli and D. W. Greve

Appl. Phys. Lett. 58, 2096 (1991); http://dx.doi.org/10.1063/1.104998 (3 pages) | Cited 24 times

Full Text: | Download PDF

Show Abstract
Selective epitaxy of GexSi1−x in an ultrahigh‐vacuum chemical vapor deposition reactor from SiH4 and GeH4/H2 is reported for the first time. Growth is performed at 600 °C on patterned wafers after an 800 °C bake which provides a clean silicon surface. Selective growth is maintained during a short incubation time. GeH4/H2 is found to increase the incubation time and the growth rate improving selectivity. Diodes fabricated from selectively grown films demonstrate high material and film/oxide interface quality.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
73.40.Ns Metal-nonmetal contacts
85.30.-z Semiconductor devices

Quantitative determination of high‐temperature oxygen microprecipitates in Czochralski silicon by micro‐Fourier transform infrared spectroscopy

A. Borghesi, M. Geddo, B. Pivac, A. Sassella, and A. Stella

Appl. Phys. Lett. 58, 2099 (1991); http://dx.doi.org/10.1063/1.104999 (3 pages) | Cited 12 times

Full Text: | Download PDF

Show Abstract
Oxygen content in the bulk of Czochralski silicon was analyzed by using micro‐Fourier transform infrared spectroscopy in a transversal wafer cross‐section configuration. This technique locally distinguishes between interstitial oxygen and oxygen precipitates in wafers used as substrates for epitaxial layer growth. Systematic measurements performed in the 5000–700 cm−1 wavenumber range clearly indicate the presence of oxygen microprecipitates in the bulk of the processed silicon wafers. Quantitative determination of oxygen precipitate density is reported and compared with the measured interstitial oxygen concentration.
Show PACS
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.40.Tv Optical and dielectric properties related to treatment conditions
78.30.Hv Other nonmetallic inorganics
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Thin buried cobalt silicide layers in Si(100) by channeled implantations

E. H. A. Dekempeneer, J. J. M. Ottenheim, P. C. Zalm, C. W. T. Bulle‐Lieuwma, D. E. W. Vandenhoudt, and E. P. Naburgh

Appl. Phys. Lett. 58, 2102 (1991); http://dx.doi.org/10.1063/1.105000 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
Si(100) wafers have been implanted with 50 keV Co ions at elevated substrate temperatures (320 °C) in the dose range 7.8×1014–7.8×1016 at. cm−2. A comparison is made between channeled (along the Si 〈100〉 surface normal) and random (tilted by 7°) implantations. Co depth distributions are measured with secondary‐ion mass spectrometry and compared to marlowe and trim simulations. Annealed samples are characterized by Rutherford backscattering spectrometry and transmission electron microscopy. Our data indicate that for channeled implantations the sputtering effect is strongly reduced as compared to random implantations. Also, the average penetration depth is increased by about 20%. As a consequence, annealing of our high‐dose implanted samples yields either a discontinuous surface silicide layer (random case) or a pinhole‐free buried silicide layer (channeled case).
Show PACS
61.72.uf Ge and Si
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Tunneling spectroscopy of ultrathin oxide on Si structure and H‐terminated Si surfaces

Michiharu Tabe and Masafumi Tanimoto

Appl. Phys. Lett. 58, 2105 (1991); http://dx.doi.org/10.1063/1.105238 (3 pages) | Cited 17 times

Full Text: | Download PDF

Show Abstract
Tunneling spectroscopy of ultrathin (1.5 nm thick) SiO2 on degenerate Si structures and of hydrogen‐terminated Si surfaces is studied with scanning tunneling microscopy (STM) in an air ambient. Two kinds of tunneling spectra, i.e., normal‐site and defect‐site spectra, are observed for the oxide samples depending on measuring sites, while only the normal‐site spectra are observed for H‐terminated surfaces. The normal‐site spectra strongly depend on dopant types and reflect bulk band structures of Si. The defect‐site spectra show negative differential resistance (NDR) and the defect sites are identified on STM images as depressed areas. The origin of the NDR is ascribed to resonant tunneling through localized defects in the oxide.
Show PACS
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
73.61.Ng Insulators
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Hi Surface barrier, boundary, and point contact devices

Transmission electron microscopy characterization of the initial stage of epitaxial growth of GaP on Si by low‐pressure metalorganic chemical vapor deposition

T. Soga, T. George, T. Suzuki, T. Jimbo, M. Umeno, and E. R. Weber

Appl. Phys. Lett. 58, 2108 (1991); http://dx.doi.org/10.1063/1.104975 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
The initial stage of epitaxial growth of GaP on Si by low‐pressure metalorganic chemical vapor deposition was characterized by transmission electron microscopy. The growth mode changes from three‐dimensional to two‐dimensional with increasing V/III ratio. GaP on Si grown at a low V/III ratio of 800 contains many dislocations, stacking faults, and microtwins; however, a significant reduction in the density of these defects is observed in GaP grown at high V/III ratio of 3200.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.72.Bb Theories and models of crystal defects
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Improvement of the carrier confinement by double‐barrier GaAs/AlAs/(Al,Ga)As quantum well structures

G. Neu, Y. Chen, C. Deparis, and J. Massies

Appl. Phys. Lett. 58, 2111 (1991); http://dx.doi.org/10.1063/1.104976 (3 pages) | Cited 17 times

Full Text: | Download PDF

Show Abstract
The insertion of few AlAs monolayers at the interfaces between a GaAs quantum well and (Al,Ga)As barriers gives rise to a new type of structure which is well described as a double‐barrier quantum well. It is shown that only one or two AlAs monolayers are sufficient to significantly increase the confinement energies. Our results are discussed in the light of low‐temperature photoluminescence experiments and are well described in the framework of numerical calculations based on the envelope function formalism.
Show PACS
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.55.Cr III-V semiconductors

Changes in the silicon thermal donor energy level as a function of anneal time

C. D. Lamp and B. D. Jones

Appl. Phys. Lett. 58, 2114 (1991); http://dx.doi.org/10.1063/1.104977 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
A deep level transient spectroscopy (DLTS) study of 450 °C annealed Czochralski silicon is presented. Particular attention is given to the relative concentrations of the two thermal donor energy levels Ec−0.15 eV and Ec−0.07 eV. Relative concentrations of the Ec−0.15 eV and Ec−0.07 eV energy levels indicate that there are fewer of the more shallow level. Also there is anomalous motion of the energy levels with anneal time indicating the gradual accretion of the thermal donor complexes. The suggested correlation with infrared absorption (IR) studies is that the nine double‐donor defects found by IR form sequentially in the material and the DLTS energy level obtained merely reflects the most abundant of the nine distinct complexes. This indicates that the nine thermal donors are formed by the addition of some constituent to an earlier complex. As the thermal donor complex accretes the associated energy levels change, moving to shallower energies as anneal time increases. These findings tend to contradict the simple thermal donor models.
Show PACS
71.55.Ht Other nonmetals
81.40.Rs Electrical and magnetic properties related to treatment conditions
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

High electron mobility in modulation‐doped Si/SiGe

K. Ismail, B. S. Meyerson, and P. J. Wang

Appl. Phys. Lett. 58, 2117 (1991); http://dx.doi.org/10.1063/1.104978 (3 pages) | Cited 84 times

Full Text: | Download PDF

Show Abstract
Ultrahigh‐vacuum chemical vapor deposition has been exploited to grow single‐heterojunction n‐type modulation‐doped Si/SiGe structures. Phosphorus dopant is imbedded in the SiGe layer at two distinct positions: one at the surface to prevent depletion by surface states, and the other separated from the Si heterointerface by an intrinsic SiGe spacer, to supply electrons to the two‐dimensional electron gas. With a 4‐nm‐thick spacer layer, peak mobilities of 1800 cm2/V s, 9000 cm2/V s, and 19 000 cm2/V s were measured at room temperature, 77 and 1.4 K, respectively. These are the highest values reported for this material system.
Show PACS
73.61.Ey III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
72.80.Ey III-V and II-VI semiconductors

Heteroepitaxy of I‐VII materials on III‐V substrates

Eugen Tarnow and S. B. Zhang

Appl. Phys. Lett. 58, 2120 (1991); http://dx.doi.org/10.1063/1.104979 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
We predict, on the basis of ab initio total energy calculations, that epitaxial growth of I‐VII compounds on III‐V substrates can be accomplished. We suggest specific combinations of I‐VII materials and III‐V substrates that minimize lattice mismatch and structural energy cost and show that the interface dipole can be minimal. This makes zinc‐blende I‐VII materials potential candidates for passivating layers, solid‐state laser applications, III‐V window material, and hole traps.
Show PACS
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.55.-a Thin film structure and morphology
73.61.-r Electrical properties of specific thin films

Enhancement of boron diffusion through gate oxides in metal‐oxide‐semiconductor devices under rapid thermal silicidation

J. Lin, K. Park, S. Batra, S. Banerjee, J. Lee, and G. Lux

Appl. Phys. Lett. 58, 2123 (1991); http://dx.doi.org/10.1063/1.104980 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
It has recently been reported that there is anomalous enhanced diffusion of B through the gate oxide in metal‐oxide‐semiconductor (MOS) structures from B‐implanted, p+‐polycrystalline silicon gates upon annealing in the presence of H or F. This letter discusses the effects of TiSi2 formation on B penetration through the gate oxide in p+ polycrystalline silicon gate MOS devices. From secondary‐ion mass spectrometry analyses, it is found that B penetration effect is enhanced by TiSi2 formation, for 950 and 1100 °C rapid thermal annealing, in spite of the fact that the F concentration in the gate oxide for samples with silicide is lower than that for samples without silicide. Furthermore, samples with a one‐step TiSi2 formation process exhibit more serious B penetration effects than those with a two‐step process. This indicates that the effect of silicide on B penetration is more complicated than simply acting as a sink for F. Pileup of B at the silicide/polycrystalline silicon interface, the generation of point defects such as Si vacancies and interstitials during silicide formation, and B‐defect interactions must be taken into account to explain the results.
Show PACS
66.30.J- Diffusion of impurities
68.35.Fx Diffusion; interface formation
66.30.Lw Diffusion of other defects

Valence‐band‐edge shift due to doping in p+ GaAs

J. A. Silberman, T. J. de Lyon, and J. M. Woodall

Appl. Phys. Lett. 58, 2126 (1991); http://dx.doi.org/10.1063/1.104981 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
Accurate knowledge of the shifts in valence‐ and conduction‐band edges due to heavy doping effects is crucial in modeling GaAs device structures that utilize heavily doped layers. X‐ray photoemission spectroscopy was used to deduce the shift in the valence‐band‐edge induced by carbon (p type) doping to a carrier density of 1×1020 cm−3 based on a determination of the bulk binding energy of the Ga and As core levels in this material. Analysis of the data indicates that the shift of the valence‐band maximum into the gap and the penetration of the Fermi level into the valence bands exactly compensate at this degenerate carrier concentration, to give ΔEv =0.12±0.05 eV.
Show PACS
73.61.Ey III-V semiconductors
71.55.Eq III-V semiconductors
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close