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7 Jan 1991

Volume 58, Issue 1, pp. 1-102

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Elimination of dark line defects in GaAs‐on‐Si by post‐growth patterning and thermal annealing

Naresh Chand and S. N. G. Chu

Appl. Phys. Lett. 58, 74 (1991); http://dx.doi.org/10.1063/1.104449 (3 pages) | Cited 14 times

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Post‐growth patterning to <15 μm×15 μm size patterns combined with thermal annealing at 850 °C for ≳15 min eliminates the dark line defects (DLDs) in GaAs‐on‐Si as shown by the spatially resolved photoluminescence technique. Patterning to small size islands of GaAs facilitates dislocation migration laterally out of the crystal, and thermal annealing provides the activation energy for the dislocations to migrate and interact. Patterning to small size features also significantly reduces the thermally induced biaxial tensile stress as reported earlier. On large size patterns, the density of DLDs is significantly reduced near the surface leaving larger volume of the material free from DLDs.
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61.72.Bb Theories and models of crystal defects
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.65.-b Surface treatments

High quality AlxGa1−xAs grown by organometallic vapor phase epitaxy using trimethylamine alane as the aluminum precursor

W. S. Hobson, T. D. Harris, C. R. Abernathy, and S. J. Pearton

Appl. Phys. Lett. 58, 77 (1991); http://dx.doi.org/10.1063/1.104450 (3 pages) | Cited 42 times

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High quality AlxGa1−xAs has been grown by low‐pressure (30 Torr) organometallic vapor phase epitaxy (OMVPE) using a novel precursor, trimethylamine alane (TMAAl), as the aluminum source. The epilayers exhibited featureless surface morphology, very strong room‐temperature photoluminescence (PL), and excellent compositional uniformity (x=0.235±0.002 over a 40 mm diameter). The residual carbon incorporation, which determined the background doping, depended largely upon the choice of gallium precursor. Using triethylgallium, carbon incorporation could be largely suppressed ([C]≪1016 cm−3). The carbon‐related emission intensity was less than the bound exciton emission in low‐temperature (1.6 K) PL even at excitation powers as low as 50 μW cm−2. By sharp contrast, the use of trimethylgallium led to much higher C concentrations (2–5×1017cm−3). Under appropriate conditions, therefore, the use of TMAAl produces extremely high purity AlGaAs of superior quality to AlGaAs grown using conventional precursors.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
73.61.Ey III-V semiconductors

Dopant‐enhanced low‐temperature epitaxial growth of in situ doped silicon by rapid thermal processing chemical vapor deposition

T. Y. Hsieh, K. H. Jung, Y. M. Kim, and D. L. Kwong

Appl. Phys. Lett. 58, 80 (1991); http://dx.doi.org/10.1063/1.104452 (3 pages) | Cited 4 times

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We have demonstrated, for the first time, that the epitaxial growth temperature can be lowered by dopant incorporation using rapid thermal processing chemical vapor deposition. Heavily arsenic‐doped epitaxial layers with very abrupt dopant transition profiles and relatively uniform carrier distributions have been achieved at 800 °C. In addition, it is found that defect formation is closely related to dopant concentration.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Electrical characterization of GaAs PiN junction diodes grown in trenches by atomic layer epitaxy

P. G. Neudeck, J. S. Kleine, S. T. Sheppard, B. T. McDermott, S. M. Bedair, J. A. Cooper, and M. R. Melloch

Appl. Phys. Lett. 58, 83 (1991); http://dx.doi.org/10.1063/1.104453 (3 pages) | Cited 1 time

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We report the electrical characterization of GaAs PiN junction diodes grown over the sidewalls of patterned trenches by atomic layer epitaxy. The diodes exhibit excellent rectifying behavior demonstrating that high quality GaAs was grown on the entire trench structure including sidewalls and corners. The sidewall material is characterized electrically through reverse bias diode leakage from thermal generation in the depletion region. 2‐μm‐deep trenches contribute a leakage current of less than 60 μA/cm2 of sidewall area under 1 V reverse bias at 144 °C, which is satisfactory for most device applications.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.De Semiconductor-device characterization, design, and modeling
85.30.Kk Junction diodes
73.61.Ey III-V semiconductors

Centroid shift of γ rays from positron annihilation in the depletion region of metal‐oxide‐semiconductor structures

T. C. Leung, Y. Kong, K. G. Lynn, B. Nielsen, Z. A. Weinberg, and G. W. Rubloff

Appl. Phys. Lett. 58, 86 (1991); http://dx.doi.org/10.1063/1.104399 (3 pages) | Cited 6 times

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Using metal‐oxide‐semiconductor (MOS) structures, the shift of centroid (peak) of γ‐ray energy distributions emitted from positron annihilation has been measured as a function of incident positron energy. The Doppler centroid shift was found to be consistent with the positron motion in the MOS depletion region. The results are described by a one‐dimensional positron diffusion model, and provide information on ‘‘effective’’ positron diffusion length under applied field.
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71.60.+z Positron states
78.70.Bj Positron annihilation
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Superconducting YBa2Cu3O7−x thin films on silver substrates by in situ plasma‐enhanced metalorganic chemical vapor deposition

J. Zhao, Y. Q. Li, C. S. Chern, P. Norris, B. Gallois, B. Kear, and B. W. Wessels

Appl. Phys. Lett. 58, 89 (1991); http://dx.doi.org/10.1063/1.104400 (3 pages) | Cited 7 times

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An in situ microwave plasma‐enhanced metalorganic chemical vapor deposition process was used to fabricate highly c‐axis oriented YBa2Cu3O7−x superconducting thin films on metallic Ag substrates. The films were deposited at a reduced substrate temperature of 740 °C in about 270 Pa of N2O ambient. Magnetic susceptibilities versus temperature of the as‐deposited films show attainment of zero resistance of 85 K and composition of single (high Tc) phase. X‐ray diffraction measurements reveal that the films deposited at 740 °C have highly preferential orientation of the crystallite c axes perpendicular to the substrate surface.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
74.78.-w Superconducting films and low-dimensional structures
74.25.Ha Magnetic properties including vortex structures and related phenomena

Comparison between the magnetic and transport critical current densities in high critical current density melt‐textured yttrium barium copper‐oxide

L. Gao, R. L. Meng, Y. Y. Xue, P. H. Hor, and C. W. Chu

Appl. Phys. Lett. 58, 92 (1991); http://dx.doi.org/10.1063/1.104401 (3 pages) | Cited 19 times

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Using our recently developed pulsed critical current density (Jc) measuring system, the Jc of the high Jc melt‐textured YBa2Cu3O7−δ (Y123) bulk samples has been determined. I‐V curves with a voltage resolution of 0.5 μV were obtained, and transport Jc’s along the a‐b plane (Jc∥ a‐b) as high as 7.2×1 04 A/cm2 were extracted. These results are comparable to the values obtained magnetically. On the other hand, transport Jc along the c axis (Jc∥c) were found to be two orders of magnitude smaller, even though the magnetic Jc∥c is only about five times smaller than Jc∥a‐b. We suggest that for the high‐temperature superconducting materials which are highly anisotropic, caution should be taken when using the nontransport magnetic methods to determine Jc.
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74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.70.-b Superconducting materials other than cuprates
74.20.Mn Nonconventional mechanisms
74.20.Rp Pairing symmetries (other than s-wave)

All‐high Tc Josephson tunnel junction: Ba1−xKxBiO3/Ba1−xKxBiO3 junctions

A. N. Pargellis, F. Sharifi, R. C. Dynes, B. Miller, E. S. Hellman, J. M. Rosamilia, and E. H. Hartford

Appl. Phys. Lett. 58, 95 (1991); http://dx.doi.org/10.1063/1.104402 (2 pages) | Cited 31 times

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We have fabricated all‐high Tc superconducting tunnel junctions in the material Ba1−xKxBiO3. The junctions are of very high quality and have a Josephson supercurrent. For the low‐resistance junctions, the IcR product approaches the theoretical limit.
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74.50.+r Tunneling phenomena; Josephson effects
85.25.Cp Josephson devices

Highly undercooled W and Re drops in an ultrahigh‐vacuum drop tube

B. Vinet, L. Cortella, J. J. Favier, and P. Desre

Appl. Phys. Lett. 58, 97 (1991); http://dx.doi.org/10.1063/1.104403 (3 pages) | Cited 28 times

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The Grenoble drop tube first experiments and results on pure W and Re droplets are presented. High absolute amounts of undercooling have been reached (530 K for W and 975 K for Re). The solidified samples are single crystals in the case of W and polycrystals in the case of Re. The liquid‐solid interfacial energy is derived from these experiments.
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64.70.D- Solid-liquid transitions
81.10.Fq Growth from melts; zone melting and refining

Micromachined silicon tunnel sensor for motion detection

T. W. Kenny, S. B. Waltman, J. K. Reynolds, and W. J. Kaiser

Appl. Phys. Lett. 58, 100 (1991); http://dx.doi.org/10.1063/1.104432 (3 pages) | Cited 22 times

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We have used the extreme sensitivity of electron tunneling to variations in electrode separation to construct a novel, compact displacement transducer. Electrostatic forces are used to control the separation between the tunneling electrodes, thereby eliminating the need for piezoelectric actuators. The entire structure is composed of micromachined silicon single crystals, including a folded cantilever spring and a tip. Measurements of displacement sensitivity and noise are reported. This device offers a substantial improvement over conventional technology for applications which require compact, highly sensitive transducers.
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07.07.Mp Transducers
73.40.Gk Tunneling
93.85.-q Instruments and techniques for geophysical research: Exploration geophysics
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