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20 May 1991

Volume 58, Issue 20, pp. 2195-2311

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Nanosecond laser‐induced cavitation in carbon microparticle suspensions: Applications in nonlinear interface switching

C. M. Lawson, G. W. Euliss, and R. R. Michael

Appl. Phys. Lett. 58, 2195 (1991); http://dx.doi.org/10.1063/1.104924 (3 pages) | Cited 13 times

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Nanosecond transmission to total internal reflection switching has been demonstrated using a thin absorbing film of carbon microparticles suspended in ethanol. The switching results from laser‐induced cavitation and the large refractive index mismatch that occurs when the vapor bubble meets the surrounding glass substrate. This extraordinarily large refractive index change (≳0.3) causes the incident beam to be totally internally reflected at the glass‐vapor interface. Switching energies below 1 μJ have been measured using a 5 ns doubled Nd:YAG laser (λ=0.532 μm) pulse. We have investigated the effects that particle concentration, film thickness, and bias temperature have on switching performance.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
78.20.-e Optical properties of bulk materials and thin films

Reduction in linewidth enhancement factor for In0.2Ga0.8As/ GaAs/Al0.5Ga0.5As strained quantum well lasers

S. Banerjee, A. K. Srivastava, and Naresh Chand

Appl. Phys. Lett. 58, 2198 (1991); http://dx.doi.org/10.1063/1.104925 (2 pages) | Cited 1 time

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The linewidth enhancement factor α as low as 0.54 in In0.2Ga0.8As/GaAs/AlGaAs strained single quantum well lasers emitting at 0.97 μm has been measured from spontaneous emission spectra below threshold. On reducing the current further, α goes down to 0.34. These low values of α have been attributed to strain in the In0.2Ga0.8As active layer.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
85.60.Jb Light-emitting devices
73.61.Ey III-V semiconductors

Noise suppression by a novel probe beam polarization modulation in electro‐optic sampling

Ryo Takahashi and Takeshi Kamiya

Appl. Phys. Lett. 58, 2200 (1991); http://dx.doi.org/10.1063/1.104926 (3 pages)

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A new scheme of noise suppression in electro‐optic sampling system by the probe beam polarization modulation is proposed, its operation principle is analyzed, and the performance is demonstrated experimentally. The method has the advantages that narrow‐band detection can be used instead of modulating the device under test with doubled sensitivity compared with conventional methods.
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78.20.Jq Electro-optical effects
42.79.Hp Optical processors, correlators, and modulators
42.87.-d Optical testing techniques
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

25 ps pulses from a Nd:YAG laser mode locked by a frequency doubling β‐BaB2O4 crystal

K. A. Stankov

Appl. Phys. Lett. 58, 2203 (1991); http://dx.doi.org/10.1063/1.104927 (2 pages) | Cited 12 times

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We report on the generation of ultrashort light pulses from a Nd:YAG laser, passively mode locked by an intracavity frequency doubler in a nonlinear mirror arrangement. The pulse duration in the range of 20–25 ps is the shortest obtained so far from a Nd:YAG laser mode locked by this technique. In addition, the mode locking with frequency doubling crystal has provided in this experiment second‐harmonic radiation amounting up to 38% of the fundamental radiation output and single‐pass conversion efficiency of about 80%.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Pulse buildup of the germanium far‐infrared laser

F. Keilmann, V. N. Shastin, and R. Till

Appl. Phys. Lett. 58, 2205 (1991); http://dx.doi.org/10.1063/1.105235 (3 pages) | Cited 15 times

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We study the dynamics of an electrically pumped p‐Ge laser with frequency fixed to 100 cm−1 by a novel selective cavity. The growing laser power increases the pump current long before it reaches a saturating power level, an effect explained by photoionization. We further find that the laser pulse can be delayed or even quenched by injected off‐resonance far‐infrared radiation. This effect not only gives a gain coefficient of 0.01 cm−1 and a saturation power of 400 W−which confirms the high‐power capability of the laser−but furthermore reveals a novel quasihomogeneous broadening of the gain spectrum caused by transit‐time effects of rapidly moving holes.
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42.55.Px Semiconductor lasers; laser diodes
72.20.Ht High-field and nonlinear effects
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

AlInGaAs/AlGaAs separate‐confinement heterostructure strained single quantum well diode lasers grown by organometallic vapor phase epitaxy

C. A. Wang, J. N. Walpole, L. J. Missaggia, J. P. Donnelly, and H. K. Choi

Appl. Phys. Lett. 58, 2208 (1991); http://dx.doi.org/10.1063/1.104928 (3 pages) | Cited 10 times

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Separate‐confinement heterostructure diode lasers containing a strained Al0.18In0.20Ga0.62 As single quantum well active layer and Al0.25Ga0.75As confining layers have been fabricated from structures grown on GaAs substrates by low‐pressure organometallic vapor phase epitaxy. The emission wavelength of these devices is 814 nm. Threshold current density is as low as 103 A cm−2 for cavity length L=1500 μm, and differential quantum efficiency as high as 90% for L=280 μm. The characteristic temperature T0 is 214 K between 10 and 40 °C, and 159 K between 40 and 80 °C. Preliminary tests of cw operation suggest that these lasers are more reliable than AlGaAs/AlGaAs lasers.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Kk Vapor phase epitaxy; growth from vapor phase
42.60.By Design of specific laser systems

High‐contrast, large optical bandwidth field‐induced guide/antiguide modulator

T. C. Huang, Y. Chung, N. Dagli, and L. A. Coldren

Appl. Phys. Lett. 58, 2211 (1991); http://dx.doi.org/10.1063/1.104929 (3 pages) | Cited 4 times

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We report an electric field induced‐guide/antiguide optical intensity modulator which has a very wide optical bandwidth from 1 to 1.55 μm (ON/OFF ratio ≳ 13 dB from 1 to 1.55 μm for both TE and TM modes), which is the largest ever reported before for an intensity modulator. A TE mode ON/OFF ratio larger than 21 dB at 1.15 μm, and a propagation loss ∼1 dB at 1.3 μm has been measured. The electro‐optic effects, along with carrier effects have been exploited to increase the refractive index under the guide and adjacent antiguide electrodes by applying reverse biases to them.
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42.79.Hp Optical processors, correlators, and modulators
78.20.Jq Electro-optical effects
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Polarization switching and bistability in an external cavity laser with a polarization‐sensitive saturable absorber

Y. Ozeki and C. L. Tang

Appl. Phys. Lett. 58, 2214 (1991); http://dx.doi.org/10.1063/1.104930 (3 pages) | Cited 9 times

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Polarization switching and hysteresis are observed in a semiconductor laser with a two‐armed polarization‐sensitive external cavity. An intracavity polarization‐dependent saturable absorber is placed asymmetrically in one of the two arms of the external cavity so that one polarization mode is saturated more strongly than the other. The observed phenomena can be explained by the complementary processes of competition in the gain region and the polarization‐dependent saturable loss in the external cavity. This mechanism is potentially useful as the basis of a two‐mode switchable and bistable diode laser for applications as high‐speed optical memories and logic gates.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers

Efficient pulsed laser removal of 0.2 μm sized particles from a solid surface

W. Zapka, W. Ziemlich, and A. C. Tam

Appl. Phys. Lett. 58, 2217 (1991); http://dx.doi.org/10.1063/1.104931 (3 pages) | Cited 82 times

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Laser cleaning with pulsed ultraviolet and infrared lasers is successfully employed to remove particulate contamination from silicon wafer surfaces and from delicate lithography membrane masks. Particulate material investigated include latex, alumina, silicon, and gold. Gold particles as small as 0.2 μm can be effectively removed. This new and highly efficient laser cleaning is achieved by choosing a pulsed laser with short pulse duration (without causing substrate damage), and a wavelength that is strongly absorbed by the surface; the removal efficiency is further enhanced by depositing a liquid film of thickness on the order of micron on the surface just before the pulsed laser irradiation.
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81.65.-b Surface treatments
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
85.40.Hp Lithography, masks and pattern transfer

High‐power 1.48 μm multiple quantum well lasers with strained quaternary wells entirely grown by metalorganic vapor phase epitaxy

M. Joma, H. Horikawa, Y. Matsui, and T. Kamijoh

Appl. Phys. Lett. 58, 2220 (1991); http://dx.doi.org/10.1063/1.104932 (3 pages) | Cited 5 times

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This letter describes 1.48 μm multiple quantum well (MQW) lasers with strained GaInAsP quaternary wells entirely grown by metalorgainic vapor phase epitaxy. The GaInAsP quaternary layers with 1.5% biaxially compressed strain showed an excellent crystal quality and an abrupt interface within half‐monolayer fluctuations which was verified with photoluminescence spectroscopy. The maximum continuous wave output power of 140 mW was obtained at 20 °C with 1500‐μm‐long lasers whose facets were coated by anti‐ and high‐reflection films. The small internal loss of 12 cm−1 and a high internal efficiency of 70% were obtained.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Kk Vapor phase epitaxy; growth from vapor phase
85.60.Jb Light-emitting devices

Resonant self‐pumped phase conjugation in cesium vapor at 0.85 μm

Celestino J. Gaeta and Juan F. Lam

Appl. Phys. Lett. 58, 2223 (1991); http://dx.doi.org/10.1063/1.104933 (2 pages) | Cited 1 time

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We report the first observation of resonant self‐pumped phase conjugation at diode laser wavelengths. A phase conjugate reflectivity of 0.01%, and a cw threshold intensity of 75 W/cm2 were measured.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
51.70.+f Optical and dielectric properties
32.80.Xx Level crossing and optical pumping

Monoatomic step observation on Si(111) surfaces by force microscopy in air

M. Suzuki, Y. Kudoh, Y. Homma, and R. Kaneko

Appl. Phys. Lett. 58, 2225 (1991); http://dx.doi.org/10.1063/1.104934 (3 pages) | Cited 28 times

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The structure of a vicinal Si(111) stepped surface is analyzed by force microscopy in air to reveal a fine structure in a step bunching area, and a monoatomic step in a terrace region. Step heights of one to three monoatomic layers were also observed on a debunched Si(111) surface. These steps have low crystallographic indices [112], [101], [011], [213], and [ 123]. The force microscope images were in good agreement with scanning electron microscope and reflection electron microscope images observed in ultrahigh vacuum just after sample annealing by resistive heating.
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07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Md Surface thermodynamics, surface energies

Preparation and characterization of nanocrystalline cubic boron nitride by microwave plasma‐enhanced chemical vapor deposition

Hidetoshi Saitoh and Walter A. Yarbrough

Appl. Phys. Lett. 58, 2228 (1991); http://dx.doi.org/10.1063/1.105236 (3 pages) | Cited 47 times

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Polycrystalline boron nitride films have been deposited using microwave plasma‐enhanced chemical vapor deposition. IR absorption spectra of films deposited using NaBH4 as the boron source in NH3 and H2 gases showed absorptions which are nearly the same as the characteristic vibrational modes seen in cubic and pyrolytic boron nitrides. Films deposited at 5 Torr also showed electron diffraction patterns for pyrolytic boron nitride, turbostratic boron nitride and cubic boron nitride. At higher gas pressures, only rings consistent with the formation of amorphous and cubic boron nitride were observed. Although the Raman spectra from a film deposited at 60 Torr showed broad peaks at ∼1080 and ∼1310 cm−1, the positions of the Raman lines for cubic boron nitride, no x‐ray diffraction lines could be observed except that of the silicon substrate.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.30.Hv Other nonmetallic inorganics

Novel far‐infrared‐photoconductor based on photon‐induced interedge channel scattering

E. Dießel, G. Müller, D. Weiss, K. von Klitzing, K. Ploog, H. Nickel, W. Schlapp, and R. Lösch

Appl. Phys. Lett. 58, 2231 (1991); http://dx.doi.org/10.1063/1.104935 (3 pages) | Cited 14 times

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We demonstrate experimentally that the far‐infrared photoresponse of GaAs/AlGaAs heterostructures at photon energies corresponding to cyclotron resonance absorption is strongly enhanced in the adiabatic transport regime of the quantum Hall effect (QHE). Ideal adiabatic transport is characterized within the edge channel picture of the QHE by the absence of interedge channel scattering. We realize adiabatic transport by the means of a multiple gate finger structure, which is used for a selective population of the edge channels. The cyclotron resonance absorption is interpreted as an additional interchannel scattering process increasing the magnetoresistance.
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73.50.Pz Photoconduction and photovoltaic effects
72.40.+w Photoconduction and photovoltaic effects
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.60.Gz Photodetectors (including infrared and CCD detectors)

Intersubband absorption and infrared photodetection at 3.5 and 4.2 μm in GaAs quantum wells

Harald Schneider, Frank Fuchs, Bernhard Dischler, John D. Ralston, and Peter Koidl

Appl. Phys. Lett. 58, 2234 (1991); http://dx.doi.org/10.1063/1.104936 (3 pages) | Cited 62 times

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We propose and demonstrate a novel concept for intersubband detectors at operating wavelengths of 3–5 μm using GaAs quantum wells. An extremely large intersubband spacing is obtained by using ultrathin AlAs barriers on either side of the GaAs quantum wells followed by a thicker Al0.3Ga0.7As layer. Simultaneously, the confining AlAs layers act as tunnel barriers which allow an electrical detection of the intersubband excitation.
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73.50.Pz Photoconduction and photovoltaic effects
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Optically detected microwave‐induced impact ionization of ytterbium bound excitons in InP

B. J. Heijmink Liesert, M. Godlewski, A. Stapor, T. Gregorkiewicz, C. A. J. Ammerlaan, J. Weber, M. Moser, and F. Scholz

Appl. Phys. Lett. 58, 2237 (1991); http://dx.doi.org/10.1063/1.104937 (3 pages) | Cited 23 times

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Optically detected microwave‐induced impact ionization of excitons and shallow donors is studied in Yb‐doped InP grown by metalorganic chemical vapor deposition. The experimental results directly confirm that Yb3+ intrashell emission is induced by nonradiative recombination of Yb bound excitons due to an impurity Auger effect. Yb3+ ions in InP are found to bind excitons with the electron being localized first, followed by subsequent hole capture.
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76.70.Hb Optically detected magnetic resonance (ODMR)
78.55.Cr III-V semiconductors
71.35.-y Excitons and related phenomena

How far does the charge state affect the iron behavior in silicon?

T. Heiser and A. Mesli

Appl. Phys. Lett. 58, 2240 (1991); http://dx.doi.org/10.1063/1.104938 (3 pages) | Cited 10 times

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Low‐temperature precipitation of neutral interstitial iron in n‐type silicon is investigated by means of photocapacitance measurements. Isothermal kinetics as well as iron depth profiles are observed which agree very well with an outdiffusion mechanism of iron to the sample surface. From these data the diffusion coefficient of neutral iron in silicon could be determined. Comparison with published results on positively charged iron in p‐type silicon reveals a higher stability of neutral iron as well as a charge state dependence of its diffusion mechanism.
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61.72.Yx Interaction between different crystal defects; gettering effect
66.30.J- Diffusion of impurities
71.55.Ht Other nonmetals
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Effect of annealing Sb/InP(110) interfaces and Schottky barrier formation of Ag on annealed Sb/InP(110) surfaces

Masao Yamada, Anita K. Wahi, Paul L. Meissner, Alberto Herrera‐Gomez, Tom Kendelewicz, and William E. Spicer

Appl. Phys. Lett. 58, 2243 (1991); http://dx.doi.org/10.1063/1.104939 (3 pages) | Cited 13 times

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The effect of annealing one monolayer of Sb on p‐InP on the surface Fermi level position and the band bending due to Ag deposition on these well‐ordered surfaces have been studied using photoemission spectroscopy. The adsorption of one monolayer of Sb on p‐InP gives a Fermi level position 0.85 eV above the valence band maximum (VBM). However, with increasing annealing temperature, the band bending decreases and recovers to nearly the flatband condition above 200 °C. The Fermi level movement of annealed InP shows a correlation with the surface stoichiometry of phosphorus and indium. Ag deposition on these annealed Sb/p‐InP interfaces gives an anomalously low band bending of 0.5 eV above the VBM.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.40.Ns Metal-nonmetal contacts
85.30.Hi Surface barrier, boundary, and point contact devices

Influence of crystal imperfection on high‐resolution diffraction profiles of silicon single crystals measured by highly collimated x‐ray beams

S. Kawado, S. Kojima, I. Maekawa, and T. Ishikawa

Appl. Phys. Lett. 58, 2246 (1991); http://dx.doi.org/10.1063/1.104940 (3 pages)

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We examined high‐resolution diffraction profiles of as‐grown and annealed magnetic‐field‐applied Czochralski (MCZ) silicon crystals which were about 300 μm thick and [001] oriented, and compared these profiles with the ultraplane wave x‐ray topographs. Rocking curves for the symmetric 220 diffraction were measured in the Laue geometry using a (+m, −n, +n) separated three‐crystal monochromator. Strain introduced in the sample preparation process gave a reduced oscillatory profile of a rocking curve although chemical etching recovered subsidiary peaks of the rocking curve. Strain frozen in as‐grown crystals also gave a reduced oscillatory‐profile, but a large number of oxygen precipitates produced by thermal annealing caused little reduction of subsidiary peaks.
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61.05.cf X-ray scattering (including small-angle scattering)
61.05.cj X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.
61.72.Bb Theories and models of crystal defects
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Nondisruptive oxide overlayer growth on GaAs(110)

G. H. Kroll, T. R. Ohno, and J. H. Weaver

Appl. Phys. Lett. 58, 2249 (1991); http://dx.doi.org/10.1063/1.104941 (3 pages) | Cited 1 time

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Three different ways of forming oxide overlayers on GaAs(110) have been examined with x‐ray photoemission. First, Cr atoms were deposited onto cleaved GaAs(110) at 300 K, producing a disrupted region over which Cr metal grew. Subsequent exposure to O2 resulted in an inhomogeneous overlayer with areas of thick Cr2O3‐like oxides in addition to As and Ga oxides. GaAs oxidation was enhanced by Cr‐induced surface disruption, but there was no evidence of a catalytic process. Second, metallic clusters of Cr containing hundreds of atoms were condensed onto GaAs(110). In this case, no substrate disruption was observed at low temperature. O2 exposure resulted in Cr2O3 formation with small amounts of Ga2O3 and no detectable As2O3. Third, Cr atoms and O2 molecules were condensed onto a Xe buffer layer on GaAs(110) to produce Cr2O3‐like species out of contact with the semiconductor. Buffer layer desorption brought these Cr2O3 aggregates into contact with the substrate. The overlayer produced in this manner was abrupt, and there was no evidence of GaAs oxidation.
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68.35.Fx Diffusion; interface formation
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Interactive effects in the reactive ion etching of SiGe alloys

G. S. Oehrlein, Y. Zhang, G. M. W. Kroesen, E. de Frésart, and T. D. Bestwick

Appl. Phys. Lett. 58, 2252 (1991); http://dx.doi.org/10.1063/1.104942 (3 pages) | Cited 14 times

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Reactive ion etching (RIE) of epitaxial, strained Si1−xGex alloys, x≤0.20, in fluorine‐, chlorine‐, and bromine‐based low‐pressure plasmas has been investigated. The SiGe etch rates increase for each etchant with Ge concentration, e.g., for fluorine‐based RIE (CF4 and SF6) the etch rate of a Si80Ge20 alloy is ≂2x that of elemental Si. Analysis shows that the etch rate increase is not accounted for by the greater rate of gasification of Ge atoms alone but that the presence of Ge atoms in the SiGe alloy increases the rate of Si etch product formation.
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81.65.-b Surface treatments
61.80.Jh Ion radiation effects

Highly strained GaAs/InGaAs/AlAs resonant tunneling diodes with simultaneously high peak current densities and peak‐to‐valley ratios at room temperature

R. M. Kapre, A. Madhukar, and S. Guha

Appl. Phys. Lett. 58, 2255 (1991); http://dx.doi.org/10.1063/1.104943 (3 pages) | Cited 8 times

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Highly strained In0.33Ga0.67As/AlAs‐based resonant tunneling diodes have been fabricated on GaAs(100) substrates without the use of thick strain relieving buffer layers. These structures exhibit a simultaneously high peak current density (Jp) of 125 kA/cm2 and a peak to valley ratio (PVR) of 4.7. A PVR of 5.9 with Jp=73 kA/cm2 is observed on some devices, the highest PVR seen for such devices. The excellent resonant tunneling characteristics of these devices are attributed to accurate device design using a Γ‐X‐Γ‐X‐Γ resonant tunneling path and to high quality interfaces obtained through the use of optimized growth conditions.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.61.Ey III-V semiconductors
73.40.Gk Tunneling
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Si dopant migration and the AlGaAs/GaAs inverted interface

Loren Pfeiffer, E. F. Schubert, K. W. West, and C. W. Magee

Appl. Phys. Lett. 58, 2258 (1991); http://dx.doi.org/10.1063/1.104915 (3 pages) | Cited 42 times

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Electron transport in quantum well modulation δ doped on either the normal or the inverted side has revealed the major cause of the long‐puzzling inferior transport characteristics of the inverted interface. For growth conditions optimized for best transport with normal‐side doping, we find migration of the Si dopant toward the inverted interface during growth to be the primary reason for the reduced inverted well mobility. This new understanding has allowed us to grow modulation‐doped inverted quantum wells of unprecedented quality having electron mobilities as high as 2.4×106 cm2/V s at 4.2 K and 3.0×106 cm2/V s at 1.0 K.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
72.80.Ey III-V and II-VI semiconductors
72.15.Eb Electrical and thermal conduction in crystalline metals and alloys
73.61.Ey III-V semiconductors

Reflectance‐difference spectroscopy study of surface reactions in atomic layer epitaxy of GaAs using trimethylgallium and tertiarybutylarsine

B. Y. Maa and P. D. Dapkus

Appl. Phys. Lett. 58, 2261 (1991); http://dx.doi.org/10.1063/1.104916 (3 pages) | Cited 15 times

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A real‐time reflectance‐difference spectroscopy (RDS) study of surface reactions of trimethylgallium (TMGa) and tertiarybutylarsine (TBAs) with (001)GaAs surfaces in an ultrahigh vacuum environment is reported. These studies reveal several phases of atomic layer epitaxy of GaAs using TMGa. A model consistent with various kinetics studies is established to explain the distinct behavior observed in RDS during TMGa exposures. It is shown that optimal growth conditions can be achieved through RDS monitoring. The self‐limiting mechanism which occurs in TMGa exposure cycle is believed to result from both selective adsorption and reaction of TMGa at As atoms and Ga vacancy induced Ga‐rich surface reconstruction. It is also shown that TBAs is a promising arsenic source for atomic layer epitaxy.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Quantum efficiency enhancement of AlGaAs/GaAs quantum well infrared detectors using a waveguide with a grating coupler

J. Y. Andersson, L. Lundqvist, and Z. F. Paska

Appl. Phys. Lett. 58, 2264 (1991); http://dx.doi.org/10.1063/1.104917 (3 pages) | Cited 48 times

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Long wavelength quantum well detectors with very high quantum efficiency, based on the coupling of radiation into an optical resonant cavity or waveguide defined by a reflection grating coupler on one side of the infrared absorbing multiquantum well stack, and an aluminum arsenide cladding layer on the other, have been fabricated and the results compared with theory. Theory shows that quantum efficiencies up to 90% may be obtained (for polarized radiation). However, experimental results indicate that the response peak becomes broadened due to spread in the grating period and therefore the maximum quantum efficiency is in practice limited to 60%, corresponding to a current responsivity of 2.1 A/W. This is 2.7 times larger than for a 45° polished edge detector with the same quantum well characteristics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
42.79.Gn Optical waveguides and couplers
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
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