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20 May 1991

Volume 58, Issue 20, pp. 2195-2311

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Enhanced annealing kinetics in ion‐implanted InxAl1−xAs studied by x‐ray diffractometry

Roy Clarke, Waldemar Dos Passos, Yi‐Jen Chan, and Dimitris Pavlidis

Appl. Phys. Lett. 58, 2267 (1991); http://dx.doi.org/10.1063/1.104895 (3 pages) | Cited 2 times

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We report a rapid thermal annealing (RTA) enhancement of the structural coherence of Si‐implanted InxAl1−xAs (x≊0.54) layers on (100)InP. Under these annealing conditions (750 °C for 30 s), the enhancement occurs only in implanted samples and is characterized by the appearance of pendellösung fringes in double‐crystal x‐ray diffraction. Measurements of the parallel (ϵ∥) and perpendicular (ϵ⊥) lattice mismatch show a slight relaxation in ϵ⊥ during RTA without significant generation of dislocations (ϵ∥=0). The results suggest an electronic mechanism for the increased efficiency of RTA in implanted samples.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.U- Doping and impurity implantation
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Anomalous change of extinction spectra of CuCl microcrystals

Yasuaki Masumoto, Tetsuro Wamura, and Tomohiro Kawamura

Appl. Phys. Lett. 58, 2270 (1991); http://dx.doi.org/10.1063/1.104896 (3 pages) | Cited 4 times

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Optical transmission spectra of CuCl microcrystals embedded in NaCl crystals were studied around the Z3 exciton resonance by varying the annealing time. With the increase in the annealing time, extinction spectra of the Z3 exciton change anomalously from the absorption‐type spectrum to the emission‐type spectrum via the dispersion‐type spectrum. The Mie theory [Ann. Phys. 25, 377 (1908)] successfully explains the spectral change due to the growth of microcrystals. We report here for the first time an anomalous change of the exciton spectra due to the growth of semiconductor microcrystals.
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71.35.-y Excitons and related phenomena
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Effect of rapid thermal annealing on planar‐doped pseudomorphic InGaAs high electron mobility transistor structures

D. C. Streit, W. L. Jones, L. P. Sadwick, C. W. Kim, and R. J. Hwu

Appl. Phys. Lett. 58, 2273 (1991); http://dx.doi.org/10.1063/1.104897 (3 pages) | Cited 11 times

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We have investigated the effects of rapid thermal annealing on the electrical and optical properties of planar‐doped AlGaAs/InGaAs/GaAs high electron mobility transistor structures grown by molecular beam epitaxy. Hall effect and photoluminescence measurements on samples with In0.22Ga0.78As and In0.28Ga0.72As channels reveal a temperature‐dependent degradation in sheet charge density, Hall mobility, and photoluminescence response. The structures were essentially stable through the temperature range used in normal device processing. However, annealing temperatures greater than 700 °C resulted in strain relaxation and layer intermixing, especially for the In0.28Ga0.72As sample.
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73.61.Ey III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Low‐temperature growth of Ge on Si(100)

D. J. Eaglesham and M. Cerullo

Appl. Phys. Lett. 58, 2276 (1991); http://dx.doi.org/10.1063/1.104898 (3 pages) | Cited 62 times

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Heteroepitaxial MBE growth of Ge on Si(100) is studied at temperatures down to room temperature. We show that, as for Si and GaAs homoepitaxy, the low‐temperature limit to growth is an epitaxial thickness, hepi, before the amorphous phase is nucleated. hepi increases with increasing temperature with an apparent activation energy of 0.5±0.1 eV at 0.2 Å/s. Above 170 °C hepi increases discontinuously and becomes effectively infinite, possibly as solid phase begins to occur. We show that growth is planar for all temperatures below 300 °C, so that low‐temperature growth can be used near 200 °C to suppress island formation without encountering the limited thickness effect. In contrast with planar growth at high temperatures with an As ‘‘surfactant’’, strain relaxation of these planar epilayers occurs by normal dislocation introduction to give an array of predominantly edge misfit dislocations.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.55.-a Thin film structure and morphology

Wave packets in a semiconductor superlattice

Mark L. Biermann and C. R. Stroud

Appl. Phys. Lett. 58, 2279 (1991); http://dx.doi.org/10.1063/1.105234 (3 pages) | Cited 3 times

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A theoretical study of hole wave packets in a GaAs, Al0.3Ga0.7As superlattice is presented. Formation of the wave packet by short laser pulse excitation and the time‐dependent nature of the wave packet are discussed, with particular attention given to the quasi‐periodic nature of the time dependence. Phenomena analogous to those displayed in atomic and molecular wave packet systems are predicted. The wave packet formalism provides a powerful tool for studying coherent hole dynamics, including quantum beat phenomena, and could be useful in determining heavy and light hole relaxation rates.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency

Effects of metalorganic chemical vapor deposition growth conditions on the GaAs/Ge solar cell properties

J. C. Chen, M. Ladle Ristow, J. I. Cubbage, and J. G. Werthen

Appl. Phys. Lett. 58, 2282 (1991); http://dx.doi.org/10.1063/1.104899 (3 pages) | Cited 3 times

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We have studied the effects of metalorganic chemical vapor deposition (MOCVD) growth conditions on the properties of GaAs solar cells grown upon Ge substrates, and in particular the GaAs/Ge interface. The interface properties were found to strongly depend on growth conditions. By small changes in the growth temperature, the GaAs/Ge interface was altered from active to passive. Only a narrow temperature window (600–630 °C) for the initial GaAs layer growth gave the passive‐Ge junction together with good surface morphology. Accordingly, a high efficiency (19%, AM0) GaAs solar cell was grown by atmospheric pressure MOCVD on a Ge substrate without any junction in the Ge.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.50.Pz Photoconduction and photovoltaic effects
73.61.Ey III-V semiconductors
84.60.Jt Photoelectric conversion

Threshold shifting in pseudomorphic semiconductor‐insulator‐semiconductor heterostructure field‐effect transistors

S. L. Wright, P. M. Solomon, H. Baratte, D. C. LaTulipe, and T. N. Jackson

Appl. Phys. Lett. 58, 2285 (1991); http://dx.doi.org/10.1063/1.104900 (3 pages)

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Pseudomorphic (In,Ga)As layers are used in GaAs‐based semiconductor‐insulator‐ semiconductor (SIS) structures to shift the threshold voltage from the natural, near‐zero value. The threshold voltage is shifted positively for (In,Ga)As gate layers, and negatively for (In,Ga)As channel layers, by the (In,Ga)As/GaAs conduction‐band offset. The thermionic and field emission barrier heights agree with shifts obtained in capacitance‐voltage characteristics. The structures withstand implant activation anneals, establishing a simple technology to create either enhancement or depletion‐mode devices.
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73.40.Ty Semiconductor-insulator-semiconductor structures
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Tv Field effect devices

Measurements of the three‐dimensional impurity profile in Si using chemical etching and scanning tunneling microscopy

Takako Takigami and Masafumi Tanimoto

Appl. Phys. Lett. 58, 2288 (1991); http://dx.doi.org/10.1063/1.104901 (3 pages) | Cited 28 times

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Three‐dimensional boron impurity concentration profiles in silicon substrates have been measured with 10 nm resolution by scanning tunneling microscopy (STM) on chemically etched cleaved silicon surfaces using an impurity sensitive HF‐HNO3‐H2O solution. Comparisons to depth profiles obtained with secondary‐ion mass spectroscopy and spreading resistance methods reveal that our proposed method measures activated boron impurity concentration rather than total boron concentration. Three‐dimensional impurity profiling is demonstrated with a metal‐oxide‐silicon structure, and the lateral junction depth in the test structure is found to be 70% of the junction depth.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.72.uf Ge and Si
81.65.-b Surface treatments
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes

E. R. Brown, J. R. Söderström, C. D. Parker, L. J. Mahoney, K. M. Molvar, and T. C. McGill

Appl. Phys. Lett. 58, 2291 (1991); http://dx.doi.org/10.1063/1.104902 (3 pages) | Cited 277 times

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Oscillations have been obtained at frequencies from 100 to 712 GHz in InAs/AlSb double‐barrier resonant‐tunneling diodes at room temperature. The measured power density at 360 GHz was 90 W cm−2, which is 50 times that generated by GaAs/AlAs diodes at essentially the same frequency. The oscillation at 712 GHz represents the highest frequency reported to date from a solid‐state electronic oscillator at room temperature.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling

Epitaxial MgO on Si(001) for Y‐Ba‐Cu‐O thin‐film growth by pulsed laser deposition

D. K. Fork, F. A. Ponce, J. C. Tramontana, and T. H. Geballe

Appl. Phys. Lett. 58, 2294 (1991); http://dx.doi.org/10.1063/1.104903 (3 pages) | Cited 112 times

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Epitaxial MgO thin films were grown on Si(001) by pulsed laser deposition. In spite of a large (−22.5%) lattice mismatch, epitaxy occurs with alignment of all crystallographic axes. Epitaxial quality and deposition rate are both sensitive to temperature and oxygen pressure. We believe this is the first demonstration of epitaxial MgO on Si. We employ MgO intermediate layers for superconducting epitaxial YBa2Cu3O7−δ/BaTiO3 thin films on Si with a critical current density of 6.7×105 A/cm2 at 77 K.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
74.78.-w Superconducting films and low-dimensional structures
77.55.-g Dielectric thin films

Preparation of superconducting thin films of Bi(Pb)‐Sr‐Ca‐Cu‐O by the thermal decomposition method

F. Sumiyoshi, K. Uehigashi, H. Yamaguchi, Y. Hakuraku, H. Shimura, and S. Miyahara

Appl. Phys. Lett. 58, 2297 (1991); http://dx.doi.org/10.1063/1.104904 (3 pages) | Cited 1 time

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The thin Bi(Pb)‐Sr‐Ca‐Cu‐O film composed of the high Tc phase has been successfully made by the thermal decomposition method using an organic acid salt, which is spread on the MgO(100) substrate by the spin‐coat method. A preannealing process before a final annealing is added to the usual film preparation in order to prevent the metallic compounds in the salt from diverging to the atmosphere. The film obtained here has a flatter and smoother surface, and a higher zero‐resistivity temperature Tc0 (=107.0 K) than those of the films without the preannealing process. However, the homogeneity of the film seems to be slightly insufficient as the onset critical temperature of the real part of a complex susceptibility is about 3 K larger than Tc0.
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74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)

Oxygen incorporation in highly c‐axis oriented YBa2Cu3O7−x thin films deposited by plasma‐enhanced metalorganic chemical vapor deposition

Y. Q. Li, J. Zhao, C. S. Chern, E. E. Lemoine, B. Gallois, P. Norris, and B. Kear

Appl. Phys. Lett. 58, 2300 (1991); http://dx.doi.org/10.1063/1.104905 (3 pages) | Cited 6 times

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YBa2Cu3O7−x superconducting thin films prepared by chemical vapor deposition which exhibit high transition temperatures (Tc∼90 K) and high critical current densities (Jc≳106 A/cm2 at 77.7 K and 0 T) generally have copper‐rich precipitates on the surface. We have studied both near‐stoichiometric and nonstoichiometric highly c‐axis oriented thin films formed by plasma‐enhanced metalorganic chemical vapor deposition. We show that the reduction in transport properties (Tc and Jc) observed in stoichiometric films with smooth morphologies may result from a dramatic reduction of the oxygen diffusion rate in these thin films as compared to nonstoichiometric films. The significant enhancement of the transport properties of these films was achieved by further oxygen anneals at 480 °C.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
74.78.-w Superconducting films and low-dimensional structures
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

In situ synchrotron studies of the structural properties of Y‐Ba‐Cu‐O thin films during growth

J. Q. Zheng, X. K. Wang, M. C. Shih, S. Williams, J. So, S. J. Lee, P. Dutta, R. P. H. Chang, and J. B. Ketterson

Appl. Phys. Lett. 58, 2303 (1991); http://dx.doi.org/10.1063/1.104906 (3 pages) | Cited 7 times

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We report the first real time, in situ synchrotron x‐ray studies of Y‐Ba‐Cu‐O thin‐film growth on (100) SrTiO3 using a miniature, faced‐magnetron sputtering system. A combination of the substrate temperature and the deposition rate determines whether the film grows along the a, c, or multiple axes.
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81.15.Cd Deposition by sputtering
74.78.-w Superconducting films and low-dimensional structures
68.55.-a Thin film structure and morphology

Oscillatory interlayer magnetic coupling of sputtered Fe/Mo superlattices

Mary E. Brubaker, J. E. Mattson, C. H. Sowers, and S. D. Bader

Appl. Phys. Lett. 58, 2306 (1991); http://dx.doi.org/10.1063/1.104907 (3 pages) | Cited 42 times

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Sputtered Fe/Mo superlattices grown on sapphire exhibit an oscillatory magnetic coupling as a function of Mo thickness. Ferromagnetic Fe layers 25 Å thick couple across the nonmagnetic Mo layers ferro‐ or antiferromagnetically with a period of ∼11 Å Mo. Ferromagnetically aligned films show the anticipated trend in longitudinal Kerr‐rotation values based on calculation, while the antiferromagnetically coupled films in zero field yield only weak Kerr signals due to their characteristically ‘‘pinched’’ hysteresis loops. The films are well ordered and exhibit up to seven low‐angle, x‐ray diffraction peaks, but have negative magnetoresistive anomalies that are only ≲2% at 4.2 K.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
78.20.Ls Magneto-optical effects
73.40.Jn Metal-to-metal contacts
81.15.Cd Deposition by sputtering

Controlling H atom production in the 193 nm laser photolysis of triethylarsenic

Xiaodong Xu, Subhash Deshmukh, Jeffrey L. Brum, and Brent Koplitz

Appl. Phys. Lett. 58, 2309 (1991); http://dx.doi.org/10.1063/1.104908 (3 pages) | Cited 1 time

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We report on the production of atomic hydrogen subsequent to the 193 nm photolysis of triethylarsenic (TEAs) using an excimer laser. The H atoms are probed via two‐photon (121.6+364.7 nm) ionization, and the resulting H atom Doppler profile at Lyman‐α is presented. Photolysis power dependence studies demonstrate that substantial H atom formation occurs at relatively low laser powers. However, the H atom signal actually begins to diminish as the photolysis laser power is increased beyond ∼70 MW/cm2. Correlations with time‐of‐fight mass spectral data suggest that ion channels are being accessed. The possible mechanisms for TEAs excitation that lead to H atom formation/depletion are presented, and the implications of these observations on controlling carbon incorporation in the laser‐enhanced growth of films of GaAs, AlGaAs, etc. are discussed.
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82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
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