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10 Jun 1991

Volume 58, Issue 23, pp. 2583-2715

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Nonlinear optical properties of 2‐adamantylamino‐5‐nitropyridine crystals

S. Tomaru, S. Matsumoto, T. Kurihara, H. Suzuki, N. Ooba, and T. Kaino

Appl. Phys. Lett. 58, 2583 (1991); http://dx.doi.org/10.1063/1.104829 (3 pages) | Cited 17 times

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Several organic materials with a bulky donor group have been developed for second‐order nonlinear optics. Among these materials, 2‐adamantylamino‐5‐nitropyridine (AANP) crystal has the largest second‐order nonlinear optical coefficient. By second‐harmonics measurement at 1.064 μm, coefficients of d31 and d33 were determined to be 80 and 60 pm/V, respectively. Angle‐tuned phase‐matched second‐harmonic generation with a conversion efficiency=2×10−3 W−1 has been demonstrated using a 1 mm AANP bulk crystal at 1.064 μm.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.-a Optical materials
78.20.-e Optical properties of bulk materials and thin films

High‐power, cw, diffraction‐limited, GaAlAs laser diode array in an external Talbot cavity

Robert Waarts, David Mehuys, Derek Nam, David Welch, William Streifer, and Donald Scifres

Appl. Phys. Lett. 58, 2586 (1991); http://dx.doi.org/10.1063/1.104830 (3 pages) | Cited 21 times

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A 20‐element linear array of single transverse mode semiconductor lasers is operated in an external Talbot cavity. A total cw output power of 250 mW in a diffraction‐limited far field and 29% differential efficiency is obtained with a 50% output coupler. By decreasing the output mirror reflectivity to 20%, 900 mW cw in a 1.7 times diffraction‐limited radiation pattern with an increased differential efficiency of 38% is obtained. The low fill factor of the array (1:12) acts as a spatial mode‐selective filter resulting in strong mode discrimination.
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42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Normal incidence parallel intraband photoconductivity in GaAs/AlGaAs multiquantum wells

E. Rosencher, E. Martinet, E. Böckenhoff, Ph. Bois, S. Delaitre, and J. P. Hirtz

Appl. Phys. Lett. 58, 2589 (1991); http://dx.doi.org/10.1063/1.104831 (3 pages) | Cited 5 times

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For the first time, resonant parallel photoconductivity due to intraband optical transitions is observed in GaAs/AlGaAs multiquantum wells. The angle of incidence dependence of the detected signals indicates that the photoconductivity process is not directly related to intersubband transitions. Indeed, contrary to usual detectors based on intersubband transitions, infrared radiations are detected at normal incidence with responsivity as high as (0.05 A/W). Photoconductivity spectra reproduce roughly the absorption spectra with, however, significant differences in peak positions, indicating that the intersubband transitions are indirectly involved in the detection process. Elements of an explanatory model based on hot‐electron bolometric effects are discussed.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.50.Pz Photoconduction and photovoltaic effects
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

Production and direct measurement of circularly polarized vacuum‐ultraviolet light with multireflection optics

T. Koide, T. Shidara, M. Yuri, N. Kandaka, and H. Fukutani

Appl. Phys. Lett. 58, 2592 (1991); http://dx.doi.org/10.1063/1.104832 (3 pages) | Cited 11 times

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The conversion of linearly polarized synchrotron radiation to circular polarization has been successfully achieved beyond the LiF transmission cutoff in the vacuum ultraviolet by utilizing a triple‐reflection polarizer as a quarter‐wave retarder. The Stokes parameters of the emerging beam were directly measured at 30 eV with a reflection‐type polarimeter as a function of the rotation angle of the ‘‘circular polarizer’’ around the optical axis. The results show that a degree of circular polarization of up to ∼±82% was attained at ∼±25° rotation angles, respectively, between the incidence plane for the polarizer and the horizontal plane. This result is in good agreement with a calculation which took into account the independently measured Stokes parameters of the incoming beam.
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42.79.Ci Filters, zone plates, and polarizers
42.25.Ja Polarization
41.60.-m Radiation by moving charges
07.60.Fs Polarimeters and ellipsometers

Improvement of catastrophic optical damage level of AlGaInP visible laser diodes by sulfur treatment

Satoshi Kamiyama, Yoshihiro Mori, Yasuhito Takahashi, and Kiyoshi Ohnaka

Appl. Phys. Lett. 58, 2595 (1991); http://dx.doi.org/10.1063/1.104833 (3 pages) | Cited 23 times

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An increase of 70% in the catastrophic optical damage (COD) level of AlGaInP visible laser diodes is achieved by sulfur treatment. From transmission electron microscope and energy dispersive microanalysis, we have confirmed that most of the oxide at the mirror facets is replaced by sulfur after this treatment. It is thought that oxide at the facets introduces surface states which cause the COD, and removal of the oxide by sulfur treatment results in the higher COD level.  
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
81.65.-b Surface treatments
81.40.Tv Optical and dielectric properties related to treatment conditions

Spontaneous emission and laser oscillation properties of microcavities containing a dye solution

H. Yokoyama, M. Suzuki, and Y. Nambu

Appl. Phys. Lett. 58, 2598 (1991); http://dx.doi.org/10.1063/1.104834 (3 pages) | Cited 32 times

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An experimental study on spontaneous and stimulated emission properties of planar optical microcavities confining an organic dye solution is reported. The lasing threshold in an input‐output curve became indistinct by decreasing the distance between a pair of dielectric reflectors. The coupling ratio of spontaneous emission into a laser mode was as large as 0.2 for a cavity half a wavelength distance. Differences between the spontaneous emission dominant regime and the stimulated emission dominant regime were also examined with emission spectra and emission lifetime measurements.
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42.55.Mv Dye lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.45.+h Stimulated emission
78.55.Bq Liquids

Enhancement of the reflectivity of Mo/Si multilayer x‐ray mirrors by thermal treatment

A. Kloidt, K. Nolting, U. Kleineberg, B. Schmiedeskamp, U. Heinzmann, P. Müller, and M. Kühne

Appl. Phys. Lett. 58, 2601 (1991); http://dx.doi.org/10.1063/1.104835 (3 pages) | Cited 18 times

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Thermal treatment of a Mo/Si multilayer stack enhances its reflectivity in the soft x‐ray region. The multilayer x‐ray mirrors are fabricated by electron beam evaporation in ultrahigh vacuum. In situ measurement of the reflectivity during the deposition allows thickness control and an observation of changes in quality of the boundaries. By heating the substrates during deposition we obtain a smoothing of the interfaces. This leads to x‐ray mirrors with peak reflectivity around 50% for normal incident radiation of wavelengths between 130 and 140 Å.
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07.85.-m X- and γ-ray instruments
42.79.Wc Optical coatings
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.40.Gh Other heat and thermomechanical treatments

Propagation of picosecond electrical pulses on a silicon‐based microstrip line with buried cobalt silicide ground plane

Hartmut Roskos, Martin C. Nuss, Keith W. Goossen, David W. Kisker, Alice E. White, Ken T. Short, Dale C. Jacobson, and John M. Poate

Appl. Phys. Lett. 58, 2604 (1991); http://dx.doi.org/10.1063/1.104836 (3 pages) | Cited 13 times

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A microstrip line with a highly conducting cobalt silicide (CoSi2) ground plane buried 7 μm below the surface of a single‐crystal silicon wafer is presented. This new transmission line shows significantly reduced dispersion up to 100 GHz bandwidth compared to a conventional microstrip line with the ground plane on the back of the substrate, while being able to support active devices in the silicon dielectric. After propagating 5 mm, the rise time (10%–90%) of an electrical pulse increases only from 2.5 to 3.7 ps as opposed to an increase from 2.7 to 11.3 ps on a conventional microstrip line.
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84.40.Az Waveguides, transmission lines, striplines

Potassium and silver ion‐exchanged dual‐core glass waveguides with gratings

M. J. Li, S. Honkanen, W. J. Wang, R. Leonelli, J. Albert, and S. I. Najafi

Appl. Phys. Lett. 58, 2607 (1991); http://dx.doi.org/10.1063/1.104837 (3 pages) | Cited 10 times

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A two‐step double ion‐exchange process is employed to produce dual‐core waveguides in glass. First, potassium ion exchange is carried out at 400 °C. Then, silver ion exchange is performed at 300 °C. The fabricated waveguides have low losses, large single‐mode regions, and more symmetrical profiles than single ion‐exchanged waveguides. Etched gratings are also made in dual‐core waveguides. Very high efficiencies are demonstrated in these waveguides.
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42.79.Gn Optical waveguides and couplers
42.79.Dj Gratings
42.81.Bm Fabrication, cladding, and splicing
42.70.Ce Glasses, quartz

Very low threshold single quantum well graded‐index separate confinement heterostructure InGaAs/InGaAsP lasers grown by chemical beam epitaxy

W. T. Tsang, F. S. Choa, M. C. Wu, Y. K. Chen, A. M. Sergent, and P. F. Sciortino

Appl. Phys. Lett. 58, 2610 (1991); http://dx.doi.org/10.1063/1.104838 (3 pages) | Cited 19 times

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We have succeeded in preparing 1.5 μm wavelength strained‐layer graded‐index separate confinement heterostructure (GRINSCH) InGaAs/InGaAsP single quantum well (SQW) injection lasers by chemical beam epitaxy (CBE). These lasers have extremely low threshold current density Jth of 170 A/cm2, internal quantum efficiency of 83%, and internal waveguide loss of 3.8 cm−1. To the best of our knowledge, these results represent the best values obtained thus far from long‐wavelength InGaAs/InGaAsP quantum well injection lasers grown by any techniques. However, despite the recent rapid reduction in Jth, the threshold‐temperature dependence remains poor (T0=45 K) even in these very low Jth GRINSCH SQW lasers.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
42.60.By Design of specific laser systems
42.82.-m Integrated optics

Large, nonresonant, intensity dependent refractive index of 4‐dialkylamino‐4′‐nitro‐diphenyl‐polyene side chain polymers in waveguides

M. B. Marques, G. Assanto, G. I. Stegeman, G. R. Möhlmann, E. W. P. Erdhuisen, and W. H. G. Horsthuis

Appl. Phys. Lett. 58, 2613 (1991); http://dx.doi.org/10.1063/1.104810 (3 pages) | Cited 10 times

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We report the experimental evaluation of the intensity‐dependent index of refraction of a new class of third order nonlinear materials, side chain polymers containing 4‐dialkylamino‐4′‐nitro‐stilbene and 4‐dialkylamino‐4′‐nitro‐diphenylbutadiene as side groups. The measurements, based on nonlinear grating coupling into planar waveguides with 30 ps pulses at 1.064 μm, showed large electronic nonresonant n2 Kerr coefficients.
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42.79.Gn Optical waveguides and couplers
78.66.Qn Polymers; organic compounds
42.65.-k Nonlinear optics

Bistability in an AlAs‐GaAs‐InGaAs vertical‐cavity surface‐emitting laser

D. G. Deppe, C. Lei, T. J. Rogers, and B. G. Streetman

Appl. Phys. Lett. 58, 2616 (1991); http://dx.doi.org/10.1063/1.104811 (3 pages) | Cited 9 times

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Data are presented demonstrating bistability in the current versus voltage and light versus current characteristics of a quantum well vertical‐cavity surface‐emitting laser. The laser structures are grown using molecular beam epitaxy, and use an AlAs/GaAs Bragg reflector for the n‐side mirror, and a combination of AlAs/GaAs and either ZnSe/CaF2 or Si/SiO2 quarter‐wave dielectric layers for the p‐side mirror. Regrowth of molecular beam epitaxial layers is used for current funneling into the device active region. Light emission is measured from the epitaxial side of the device, and threshold currents range from 2 to 4 mA. The bistability stems from switching in a parasitic pnpn structure triggered by lasing in the vertical‐cavity laser, with the observed hysteresis width influenced by leakage current around the device active region.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.55.Px Semiconductor lasers; laser diodes
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Homogeneous cylindrical plasma source for short‐wavelength laser experiments

W. Hartmann, H. Bauer, J. Christiansen, K. Frank, H. Kuhn, M. Stetter, R. Tkotz, and T. Wagner

Appl. Phys. Lett. 58, 2619 (1991); http://dx.doi.org/10.1063/1.104812 (3 pages) | Cited 10 times

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A plasma source suitable for repetitive operation, going beyond single shot experiments for research into soft x‐ray lasers, is reported. Successful operation of an ultrafast, small‐diameter, highly uniform z pinch has been achieved at currents of 35–50 kA, for a variety of gases and a large range of mass densities. Due to an efficient preionization of the working gas, a high‐temperature and a high cooling rate of the plasma column are obtained. The plasma is less than 1 mm in radius, over 30 mm long, and over 1018 cm−3 ion density. A soft x‐ray recombination laser experiment for the λ≊182 Å Balmer‐alpha‐like transition in C vi is proposed.
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52.50.Dg Plasma sources
52.55.Ez Theta pinch
52.50.Lp Plasma production and heating by shock waves and compression
42.55.Vc X- and γ-ray lasers

Characterization of LiNbO3 crystals by line‐focus‐beam acoustic microscopy

J. Kushibiki, H. Takahashi, T. Kobayashi, and N. Chubachi

Appl. Phys. Lett. 58, 2622 (1991); http://dx.doi.org/10.1063/1.104813 (3 pages) | Cited 14 times

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Line‐focus‐beam (LFB) acoustic microscopy is applied to quantitative characterization of piezoelectric LiNbO3 crystals to demonstrate the usefulness of this new analytical technique. Experimental relations between chemical composition ratios of Li/Nb and leaky surface acoustic wave (LSAW) velocities for 128°YX LiNbO3 wafers are determined. LSAW velocity measurements are carried out for commercial wafers obtained from a series of crystal growths. Small changes of 0.092% are detected due to the compositional variation. It is estimated that the ‘‘effective’’ congruent composition in the production line is 48.440 Li2O mol% with the density of 4647.4 kg/m3.
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43.35.Yb Ultrasonic instrumentation and measurement techniques
43.35.Pt Surface waves in solids and liquids
62.65.+k Acoustical properties of solids

Spark channel plasma electrode

A. H. Labun, H. J. J. Seguin, and C. E. Capjack

Appl. Phys. Lett. 58, 2625 (1991); http://dx.doi.org/10.1063/1.104814 (3 pages) | Cited 1 time

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A plasma electrode potentially suitable for dc discharge pumped lasers has been developed based on the repetitive creation of a spark channel. The high‐density plasma within the arc serves as a source of charge carriers for the dc discharge, thereby largely eliminating the cathode fall. Reduction in the cathode fall potential improves with increasing spark repetition frequency until about 9 kHz, after which a constant, near‐zero value is achieved.
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52.80.Mg Arcs; sparks; lightning; atmospheric electricity
52.80.Yr Discharges for spectral sources (including inductively coupled plasma)
52.50.Dg Plasma sources

Influence of memory propagation on phase‐resolved stochastic behavior of ac‐generated partial discharges

R. J. Van Brunt and E. W. Cernyar

Appl. Phys. Lett. 58, 2628 (1991); http://dx.doi.org/10.1063/1.104815 (3 pages) | Cited 4 times

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Using measurements of phase‐restricted conditional partial‐discharge pulse‐amplitude and phase distributions, it is shown for the first time that the stochastic properties of a dielectric‐barrier type of partial discharge generated by an ac voltage are significantly influenced by memory associated with charge deposited on the dielectric surface by preceding discharge events. This memory effect must be considered in any attempt to interpret results of phase‐resolved partial‐discharge measurements.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Surface‐energy‐driven secondary grain growth in thin Sb films

L. H. Chou

Appl. Phys. Lett. 58, 2631 (1991); http://dx.doi.org/10.1063/1.104816 (3 pages) | Cited 4 times

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Deposition rates and film thicknesses have been observed to be a key parameter for the grain growth and surface‐energy‐driven secondary grain growth of the as‐deposited thin Sb films prepared by thermal evaporation. At a low deposition rate and thinner‐film thickness (∼260 Å), (003) grains which have the lowest surface energy are observed to account for approximately 90% of the microstructure. Whereas at high deposition rate and greater film thickness (∼1300 Å), an almost random grain orientation was observed from x‐ray diffraction data. After thermal annealing at 450 °C, secondary grains grew to show preferred orientation in all the films. Also, film thickness has been found to be an important factor on the succeeding microstructure after thermal annealing.
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81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
68.55.-a Thin film structure and morphology
61.66.Bi Elemental solids

Mechanical strength of silicon crystals with oxygen and boron impurities

Tetsuo Fukuda and Akira Ohsawa

Appl. Phys. Lett. 58, 2634 (1991); http://dx.doi.org/10.1063/1.104791 (2 pages) | Cited 6 times

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The mechanical strength of epitaxial and Czochralski (CZ) silicon single crystals having boron concentrations of 1015–1020 cm−3 is investigated by varying the concentration of oxygen atoms. Crystal strength is measured by the indentation technique in a temperature range from 800 to 1100 °C. The strength of both epitaxial and CZ silicon crystals is insensitive to boron concentrations up to 1018 cm−3. As boron concentration increases above 1018 cm−3, the strength of both the crystals improves dramatically. The strengthening is caused by dislocation locking of boron atoms in epitaxial crystals and of both oxygen and boron atoms in CZ crystals.
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62.20.D- Elasticity
62.20.F- Deformation and plasticity
81.40.Jj Elasticity and anelasticity, stress-strain relations
81.40.Lm Deformation, plasticity, and creep

Epitaxial PbTiO3 thin films grown by organometallic chemical vapor deposition

M. de Keijser, G. J. M. Dormans, J. F. M. Cillessen, D. M. de Leeuw, and H. W. Zandbergen

Appl. Phys. Lett. 58, 2636 (1991); http://dx.doi.org/10.1063/1.104792 (3 pages) | Cited 73 times

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Epitaxial PbTiO3 layers have been grown on (001)SrTiO3 substrates by organometallic chemical vapor deposition using the precursors titanium‐iso‐propoxide and tetra‐ethyl‐lead. The growth temperature for these films was around 700 °C. The epitaxial nature of c‐axis‐oriented PbTiO3 is confirmed by Rutherford backscattering spectrometry, x‐ray diffraction, including pole figure analysis, and high‐resolution electron microscopy (HREM). With HREM twinning has been observed.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
77.55.-g Dielectric thin films

High charge storage in amorphous BaTiO3 thin films

P. Li, T.‐M. Lu, and H. Bakhru

Appl. Phys. Lett. 58, 2639 (1991); http://dx.doi.org/10.1063/1.104793 (3 pages) | Cited 20 times

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A high charge storage density was achieved in BaTiO3 thin films on Si substrates prepared by a reactive partially ionized beam deposition technique and rapid thermal annealing (RTA) treatment. The films, being deposited at a low substrate temperature, were amorphous. The films were then annealed by using RTA in N2 ambient at 500 °C for 1 min. After the annealing the relative dielectric constant of the films was 20 and the thickness of the films was 310 Å. The charge storage density of the films was calculated to be as high as 5.6 μC/cm2 at 10 V. The leakage current density was on the order of 10−7 A/cm2 at an applied electric field of l MV/cm. The potential application of this film in high density memory is discussed.
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81.15.Jj Ion and electron beam-assisted deposition; ion plating
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Ng Insulators

Explosive anisotropic grain growth of delta‐NiMo by solid‐state diffusion

T. C. Chou and T. G. Nieh

Appl. Phys. Lett. 58, 2642 (1991); http://dx.doi.org/10.1063/1.104794 (3 pages) | Cited 1 time

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Anomalous, anisotropic grain growth has been observed in delta(δ)‐NiMo intermetallic compound during the annealings of Mo/Ni thin‐film diffusion couples at 700 and 800 °C. Two layered microstructures showing median‐sized, equiaxed grains and large columnar single crystalline grains were generated. The growth direction of the columnar grains was parallel to the direction of Ni diffusion flux. Electron diffraction indicated that both the median‐sized and the columnar grains were δ‐NiMo. The composition of δ‐NiMo was determined to be Ni48‐Mo52 (at.%). According to the thickness of reaction‐formed δ‐NiMo, the apparent interdiffusion coefficient was measured to be about 10−10 cm2/s which is 4 to 5 orders of magnitude greater than literature data. The enhanced diffusion rate in Ni‐Mo, and the anomalous anisotropic grain growth of δ‐NiMo compound are discussed on the basis of exothermic reactions between Ni and Mo during diffusional intermixing. The enthalpy of the formation of δ‐NiMo is calculated and demonstrated to be sufficient to cause melting/solidification of the compound.
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81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
61.66.Bi Elemental solids
64.70.K- Solid-solid transitions

Multiple flame deposition of diamond films

Y. Tzeng, R. Phillips, C. Cutshaw, T. Srivinyunon, B. H. Loo, and P. Wang

Appl. Phys. Lett. 58, 2645 (1991); http://dx.doi.org/10.1063/1.104795 (3 pages) | Cited 6 times

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A multiple flame burner has been used to deposit diamond films of up to 20 mm in diameter from an oxygen‐acetylene mixture. The burner consists of nine equally spaced linear holes each sustaining its own flame and rotates under a water‐cooled substrate. The diamond film’s quality is characterized as a function of its radial distance from the center of the film by scanning electron microscopy, Raman spectroscopy, and photoluminescence spectroscopy. Typical films exhibit variations in thickness and crystal structure with an increasing graphitic component present towards the edge of the film as evidenced by Raman analysis. Photoluminescence spectra exhibit defect bands at 1.95 eV present near the outer edge of the film and at 2.16 eV present near the center of the film. These luminescence bands are discussed and attributed to defects induced from the flame’s chemistry.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.66.-w Optical properties of specific thin films

Are bare surfaces detrimental in epitaxial growth?

M. Copel and R. M. Tromp

Appl. Phys. Lett. 58, 2648 (1991); http://dx.doi.org/10.1063/1.104796 (3 pages) | Cited 65 times

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For growth of epitaxial silicon‐germanium structures by hydride chemical vapor deposition (CVD), the growth front is hydrogen‐stabilized. Using medium energy ion scattering to examine the abruptness of an embedded Ge film in a Si(001) host, intermixing can be directly assessed. We have explored CVD films grown with varying hydrogen coverages, and find that adsorbed hydrogen serves a beneficial role in maintaining the abruptness of the interface. Embedded layers grown by molecular beam epitaxy are also more abrupt when the surface is stabilized, in this case by an adsorbed passivant such as Sb or As. Growth in the presence of a surface active agent (surfactant) results in greater control of constituents with no loss of epitaxial quality.
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68.35.Fx Diffusion; interface formation
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Luminescence characterization of CdTe:In grown by molecular beam epitaxy

F. Bassani, S. Tatarenko, K. Saminadayar, J. Bleuse, N. Magnea, and J. L. Pautrat

Appl. Phys. Lett. 58, 2651 (1991); http://dx.doi.org/10.1063/1.104797 (3 pages) | Cited 25 times

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We report on the incorporation of indium as a shallow donor in CdTe by molecular beam epitaxy. Using proper surface stoichiometry conditions, we demonstrate that it is possible to incorporate and activate up to 1018 cm−3 indium impurities. The doped layers have been characterized by secondary‐ion mass spectroscopy, capacitance‐voltage and Hall‐effect measurements. Photoluminescence (PL) and resonant excitation of the PL clearly identify indium as the chemical dopant, acting as an effective mass donor with an energy of 14 meV. Incorrect stoichiometry conditions lead to a poor dopant activity and to complex centers formation.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Et II-VI semiconductors
73.61.Ga II-VI semiconductors

Electronic Raman scattering from acceptors and correlation with transport properties in Li‐doped ZnSe layers

D. J. Olego, T. Marshall, D. Cammack, K. Shahzad, and J. Petruzzello

Appl. Phys. Lett. 58, 2654 (1991); http://dx.doi.org/10.1063/1.104798 (3 pages) | Cited 7 times

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Electronic Raman scattering (ERS) from holes bound to Li acceptors was studied in ZnSe layers and correlated with the net acceptor concentration NA−ND determined by capacitance versus voltage measurements. The layers were grown by molecular beam epitaxy on GaAs substrates and were doped in situ to NA−ND concentrations ranging from high 1015’s to low 1017’s cm−3. The ERS spectra reveal several transitions between the ground 1S and shallower S and P bound states of the Li acceptors as well as transitions to a continuum of delocalized valence‐band states. Values of excitation energies for the bound hydrogenic states and the ionization energy of the acceptors were measured. The strength of the ERS signal normalized to the phonon scattering depends linearly on NA−ND. This relationship can be exploited in contactless characterization of p‐type ZnSe.
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78.30.Fs III-V and II-VI semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
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