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10 Jun 1991

Volume 58, Issue 23, pp. 2583-2715

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Direct evidence of oxygen precipitates in epitaxial silicon obtained by micro‐Fourier transform infrared spectroscopy

A. Borghesi, M. Geddo, B. Pivac, A. Stella, and P. Lupano

Appl. Phys. Lett. 58, 2657 (1991); http://dx.doi.org/10.1063/1.105230 (3 pages) | Cited 7 times

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Oxygen redistribution near the interface between the epitaxial layer and substrate was monitored with micro‐Fourier transform infrared measurements in a transversal wafer cross‐section configuration. It has been shown that oxygen contamination of the epitaxial layer may induce the formation of SiO2 precipitates into the film, due to outdiffusion from the substrate. To our knowledge this is the first direct evidence of oxygen precipitation phenomena within the epitaxial layer.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
81.40.Tv Optical and dielectric properties related to treatment conditions
78.30.Hv Other nonmetallic inorganics

Defect characterization in amorphous silicon based solar cells by subband‐gap spectroscopy with constant photocurrent measurements

W. Frammelsberger, H. Rübel, P. Lechner, R. Geyer, and N. Kniffler

Appl. Phys. Lett. 58, 2660 (1991); http://dx.doi.org/10.1063/1.104799 (3 pages) | Cited 3 times

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We used the constant photocurrent method to characterize a‐Si:H based pin cells in order to discuss the correlation between the device characterizing quantity, the fill factor (FF), and the number of defects which is related to the quantity αD (subbandgap optical absorption constant). We show that the changes in the i layer due to the creation of metastable defects after light soaking or current injection−characterized by αD−directly correlate with the changes in solar cell performance (FF). We are able to show that other reasons than an increased defect density can lead to a reduction of the fill factor. Further we try to quantify αD in terms of a defect density of states.
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84.60.Jt Photoelectric conversion
73.50.Pz Photoconduction and photovoltaic effects
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Existence of threshold density in silicon surface cleaning using hydrogen electron cyclotron resonance plasma

Kenji Nakashima, Masahiko Ishii, Ichiro Tajima, and Minoru Yamamoto

Appl. Phys. Lett. 58, 2663 (1991); http://dx.doi.org/10.1063/1.104800 (3 pages) | Cited 6 times

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Silicon surfaces were cleaned using hydrogen electron cyclotron resonance (ECR) plasma, and were analyzed by x‐ray photoelectron spectroscopy after exposure to air. For cleaning a silicon surface, a threshold density exists to remove a surface oxide layer using hydrogen ECR plasma. Cleaning was promoted when the electron density was higher than the threshold density. The threshold density seems to depend on the base pressure. In the experiment, the threshold density was about 1010 cm−3 at the base pressure of 8×10−7 Torr.
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81.65.-b Surface treatments
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Tunnel electron induced charge generation in very thin silicon oxide dielectrics

K. R. Farmer, M. O. Andersson, and O. Engström

Appl. Phys. Lett. 58, 2666 (1991); http://dx.doi.org/10.1063/1.104801 (3 pages) | Cited 24 times

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Positive and negative charging effects are described for small area (0.008–20 μm2), very thin dielectric (∼2.5 nm), metal‐oxide‐silicon diodes in which electrons can tunnel directly between the electrodes. These effects are similar to those seen in conventional, thicker oxide devices in which electrons are injected into the oxide conduction band. We show that at least in the thin oxides, charge generation is possible at a total electron energy level which is well below those suggested in a number of models for damage in the thicker oxides.
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73.50.Fq High-field and nonlinear effects
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.40.Gk Tunneling
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Correlation of light‐induced changes with hydrogen content in hydrogenated amorphous silicon films

W. A. Nevin, H. Yamagishi, M. Yamaguchi, and Y. Tawada

Appl. Phys. Lett. 58, 2669 (1991); http://dx.doi.org/10.1063/1.104802 (3 pages) | Cited 2 times

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By annealing H‐rich intrinsic a‐Si:H films at 340 °C in a hydrogen atmosphere, we have prepared a series of samples with varying hydrogen content (CH), but essentially constant photoconductivity, Urbach energy, and microstructure. In this way, we have been able to eliminate some of the interfering factors contributing to the light‐induced effect, thus enabling the influence of CH to be determined. A strong correlation is found between the stability and CH, supporting the involvement of hydrogen in the light‐induced mechanism.
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73.50.Pz Photoconduction and photovoltaic effects
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.40.Tv Optical and dielectric properties related to treatment conditions

Ballistic electron transport in macroscopic four‐terminal square structures with high mobility

Y. Hirayama, T. Saku, S. Tarucha, and Y. Horikoshi

Appl. Phys. Lett. 58, 2672 (1991); http://dx.doi.org/10.1063/1.104803 (3 pages) | Cited 23 times

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Ballistic electron transport characteristics are studied using macroscopic four‐terminal square structures formed in high‐mobility wafers (μ=7.8×106 cm2/V s at 1.5 K). Ballistic transport over 200 μm can be detected as a negative peak in resistance around B=0 T when four‐terminal resistance is measured as a function of magnetic field. The ballistic mean free path (lb) of electrons is evaluated from the size dependence of the negative peak height. The estimated lb becomes 86 μm, which is approximately equal to a conventional mean free path calculated from carrier density and mobility of the wafer.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.80.Ey III-V and II-VI semiconductors
72.20.My Galvanomagnetic and other magnetotransport effects

Fast room‐temperature growth of SiO2 films by molecular‐layer dosing

D. J. Ehrlich and J. Melngailis

Appl. Phys. Lett. 58, 2675 (1991); http://dx.doi.org/10.1063/1.104804 (3 pages) | Cited 11 times

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A molecular‐layer dosing technique for room‐temperature growth of α‐SiO2 thin films has been developed. The process, based on the reaction of H2O and SiCl4 adsorbates, is catalyzed by the hydrated SiO2 growth surface and requires a specific surface phase of hydrogen‐bonded water. Careful adjustment of the coverage of this last phase is used to moderate continuous or pulsed growth. Thicknesses can be controlled to molecular‐layer precision; alternatively, fast conformal growth to rates exceeding 100 nm/min can be achieved by slight depression of the substrate temperature below room temperature. Potential applications are trench filling for integrated circuits and hermetic ultrathin layers, for multilayer photoresists. Excimer‐laser‐induced surface modification has been used to achieve projection‐patterned selective‐area growth on silicon. This last result relies on the conversion from hydrogen to hydroxyl termination of the initial growth surface.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Formation of CuInSe2 thin films by rapid thermal recrystallization

G. D. Mooney, A. M. Hermann, J. R. Tuttle, D. S. Albin, and R. Noufi

Appl. Phys. Lett. 58, 2678 (1991); http://dx.doi.org/10.1063/1.104805 (3 pages) | Cited 12 times

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Polycrystalline thin‐film CuInSe2 has been formed by rapid thermal processing of vacuum codeposited Cu, In, and Se. Films were fabricated and characterized in three composition regions: Cu‐poor (∼20 at. % Cu), stoichiometric (25 at. %), and Cu‐rich (∼28 at. %). Characterization results are presented including x‐ray diffraction analysis, electron probe for microanalysis, scanning electron microscopy, and optical reflection and transmission measurements. Results show that nearly single‐phase material has been formed from codeposited precursors with a post‐deposition annealing time of less than 2 min. The films have optical absorption coefficients in the high 104 cm−1 range with minimum subgap absorption, and an optical band gap of 1.0 eV with smooth morphologies amenable to photovoltaic device fabrication.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.40.Tv Optical and dielectric properties related to treatment conditions
81.65.-b Surface treatments
73.50.Pz Photoconduction and photovoltaic effects

Two‐dimensional electron gases in delta‐doped GaAs/In0.25Ga0.75As/GaAs heterostructures

W. Lin, W. C. Hsu, T. S. Wu, S. Z. Chang, C. Wang, and C. Y. Chang

Appl. Phys. Lett. 58, 2681 (1991); http://dx.doi.org/10.1063/1.104806 (3 pages) | Cited 12 times

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Delta‐doped (δ‐doped)GaAs/In0.25Ga0.75As/GaAs strained‐layer modulation‐doped field‐effect transistor (δ‐SMODFET) structures grown by the low‐pressure metalorganic chemical vapor deposition (LP‐MOCVD) technique have been studied for the first time. The δ‐doped GaAs, adopted as the electron supplier, was obtained by a stop‐growth process so that a very thin and heavily doped layer (1.9×1013 cm−2) can be realized. Experimental results show that a structure with an 80 Å In0.25Ga0.75As layer as the active channel and an 80 Å spacer layer demonstrated the highest two‐dimensional electron gases mobility of 26 800 cm2/V s. This structure is easy to achieve by the LP‐MOCVD method because the growth of AlGaAs is avoided and is promising for high performance FETs.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Ey III-V semiconductors
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Proposal for III‐V ordered alloys with infrared band gaps

Su‐Huai Wei and Alex Zunger

Appl. Phys. Lett. 58, 2684 (1991); http://dx.doi.org/10.1063/1.104807 (3 pages) | Cited 38 times

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It is shown theoretically that the recently observed spontaneous ordering of III‐V alloys that yields alternate monolayer (111) superlattices provides the opportunity for achieving infrared band gaps in systems such as (InAs)1(InSb)1 and (GaSb)1(InSb)1. A substantial reduction in the direct band gap is predicted to result from the L‐point folding that repel the Γ band‐edge states.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
85.30.De Semiconductor-device characterization, design, and modeling
85.60.Gz Photodetectors (including infrared and CCD detectors)

X‐ray radiation damage and a reliability study on bipolar devices

D. Boyne, L. Hsia, R. Wachnik, R. Decker, and C. Wasik

Appl. Phys. Lett. 58, 2687 (1991); http://dx.doi.org/10.1063/1.104808 (3 pages)

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The radiation damage and reliability of bipolar transistors have been studied using the vacuum ultraviolet storage ring of the National Synchrotron Light Source at the Brookhaven National Laboratory. The bipolar devices under study were exposed to x‐ray radiation in the range of 1–2 keV. The device parameters were measured before and after irradiation, and were measured again after the devices were annealed. Finally, the devices underwent a reliability test. The study shows that x‐ray radiation degrades the common emitter current gain. Upon annealing, the current gain recovers its initial value. Furthermore, the current gain exhibits the same degree of reliability as observed on nonirradiated devices.
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85.30.Pq Bipolar transistors
61.80.Cb X-ray effects

Characterization of ion‐implanted InxGa1−xAs/GaAs 0.25 μm gate metal semiconductor field‐effect transistors with Ft≳100 GHz

M. Feng, J. Laskar, W. Miller, J. Kolodzey, G. E. Stillman, and C. L. Lau

Appl. Phys. Lett. 58, 2690 (1991); http://dx.doi.org/10.1063/1.104809 (2 pages) | Cited 2 times

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This work presents millimeter wave performance achieved by ion‐implanted InGaAs/GaAs metal semiconductor field‐effect transistor devices. A current gain cutoff frequency ft of 126 GHz and maximum frequency of oscillation fmax of 232 GHz have been measured for 0.20 μm gate length devices. The ft and low‐field Hall mobility data, measured at 300 and 112 K, lead us to conclude that the average electron velocity under the gate is mainly due to the high‐field velocity rather than low‐field electron mobility.
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85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Increased x‐ray power from a transition‐radiation source

M. A. Piestrup, D. G. Boyers, C. I. Pincus, J. L. Harris, J. C. Bergstrom, H. S. Caplan, R. M. Silzer, and D. M. Skopik

Appl. Phys. Lett. 58, 2692 (1991); http://dx.doi.org/10.1063/1.104785 (3 pages) | Cited 4 times

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Soft x rays were produced by a stack of 12 aluminum foils, each 1.0 μm thick, which were bombarded by a relativistic electron beam whose maximum power was ∼10 kW. The maximum total soft x‐ray flux was measured to be 8 mW, a factor of 10 over the previous value. The maximum average power per unit area was ∼0.3 mW/cm2 over 8.5 cm2 area at 3 m from the transition radiator. Using an Intel mask, we obtained lithographs with features of 0.5 μm. Exposure times of the bare resist were as short as 150 s for 4.3 cm2 of wafer area (the resist had a 230 mJ/cm2 energy dose per unit area). The shortest time for mask/wafer exposure was 300 s for 8.5 cm2. We reduced the exposure time of the photoresist by a factor of 9 from the previous value.
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07.85.-m X- and γ-ray instruments
79.20.Kz Other electron-impact emission phenomena
78.70.Dm X-ray absorption spectra

Single electron transport in a two‐dimensional electron gas system with modulated barriers: A possible dc current standard

A. A. Odintsov

Appl. Phys. Lett. 58, 2695 (1991); http://dx.doi.org/10.1063/1.104786 (3 pages) | Cited 16 times

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A small laterally confined area of the two‐dimensional electron gas (2DEG) separated from two wide 2DEG regions by potential barriers is considered. Transparencies of the barriers can be controlled by the split gate voltages. The analysis shows that the dc current through the device can be quantized in units of ef, where f is frequency of the gate voltage modulation.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Gk Tunneling
73.50.Bk General theory, scattering mechanisms

Monolithic integration of GaAs and In0.2Ga0.8As lasers by molecular beam epitaxy on GaAs

P. R. Berger, N. K. Dutta, J. Lopata, S. N. G. Chu, and Naresh Chand

Appl. Phys. Lett. 58, 2698 (1991); http://dx.doi.org/10.1063/1.104787 (3 pages) | Cited 3 times

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Selective area molecular beam epitaxial regrowth of In0.2Ga0.8As lasers through dielectric masks between GaAs laser stripes on a GaAs substrate has been used for the first time to monolithically integrate these two lasers emitting near 1.0 and 0.85 μm, respectively. During regrowth, GaAs laser stripes were protected under a dielectric mask over which polycrystalline material grew, which was later chemically etched away during the fabrication process. The lasers are of the ridge waveguide type and have threshold currents in the 30–35 mA range for cleaved, uncoated facets at room temperature and a T0 value of 100 K. The overall performance characteristics of these lasers selectively regrown on dielectric coated wafers were comparable to lasers grown over a bare substrate.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Large Schottky barrier heights on n‐InP−A novel approach

Masao Yamada, Anita K. Wahi, Tom Kendelewicz, and William E. Spicer

Appl. Phys. Lett. 58, 2701 (1991); http://dx.doi.org/10.1063/1.104788 (3 pages) | Cited 9 times

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An unusually high Schottky barrier height (SBH) of 0.82 eV has been observed at Au/n‐InP(110) interfaces with one monolayer of Sb as an interlayer using photoemission techniques. For Au deposited on clean cleaved InP(110), Au‐In alloying that occurs with increasing Au coverage destroys interfacial perfection. The resulting Fermi level position lies ∼ 0.5 eV below the conduction band minimum, as is common for metal interfaces with clean cleaved InP. However, for InP surfaces first passivated with one monolayer of Sb, this Au–In alloying is completely inhibited. An abrupt interface results in an increased possibility of a low interface defect density. This represents a possible way to control of SBH and produces high SBH for n‐InP.
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73.30.+y Surface double layers, Schottky barriers, and work functions

Characteristics of Y‐Ba‐Cu‐O superconductor films on GaAs with an Al2O3 or AlGaO3 buffer layer

J. Shewchun, Yi Chen, J. S. Hölder, and C. Uher

Appl. Phys. Lett. 58, 2704 (1991); http://dx.doi.org/10.1063/1.104789 (3 pages) | Cited 5 times

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By depositing a buffer layer of Al2O3 on GaAs, we have been able to laser ablate a superconducting film of Y1Ba2Cu3O7−x overtop. The onset of superconductivity is 92 K and zero resistance is observed at 80 K in a structure with a suitably annealed Al2O3 film which is converted to AlGaO3. Both the Al2O3‐GaAs and the Al2O3‐Y1Ba2Cu3O7−x interfaces are remarkably well preserved with virtually no interdiffusion or interaction. The Al2O3 or homolog AlGaO3 film also prevents decomposition of the GaAs at the deposition temperature of 730 °C.
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74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition

Superconducting characteristics of a planar‐type HoBa2Cu3O7−x −La1.5Ba1.5Cu3O7−y−HoBa2Cu3O7−x junction

Yoshinobu Tarutani, Tokuumi Fukazawa, Uki Kabasawa, Akira Tsukamoto, Masahiko Hiratani, and Kazumasa Takagi

Appl. Phys. Lett. 58, 2707 (1991); http://dx.doi.org/10.1063/1.104790 (3 pages) | Cited 28 times

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A planar‐type junction of HoBa2Cu3O7−x−La1.5Ba1.5Cu3O7−y −HoBa2Cu3O7−x having an electrode spacing as small as 0.1 μm is fabricated and its electrical characteristics are measured. Supercurrent through the La1.5Ba1.5Cu3O7−y layer is detected up to the temperature of 69 K. A superconducting region extends from the YBa2Cu3O7−x electrodes into a normal La1.5Ba1.5Cu3O7−y layer with a submicrometer scale. The superconducting decay length is 65 nm, which is two orders of magnitude larger than the value calculated from the conventional proximity theory.
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74.50.+r Tunneling phenomena; Josephson effects
74.78.-w Superconducting films and low-dimensional structures
85.25.Cp Josephson devices

Giant magnetoresistance in antiferromagnetic Co/Cu multilayers

S. S. P. Parkin, Z. G. Li, and David J. Smith

Appl. Phys. Lett. 58, 2710 (1991); http://dx.doi.org/10.1063/1.104765 (3 pages) | Cited 280 times

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We report giant values of saturation magnetoresistance in sputtered antiferromagnetic Co/Cu multilayers containing thin Co and Cu layers 8–10 Å thick. We discuss the key importance of the buffer layer in controlling the growth of flat Co and Cu layers. As shown by cross‐section transmission electron microscopy high‐quality structures are found for growth on Fe buffer layers. Such structures display saturation magnetoresistance at 300 K of more than 65% with saturation fields of ≂10 kOe. These values are several times larger than previously found for any magnetic material at room temperature.
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73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
68.55.-a Thin film structure and morphology
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)

Electrostatic and bubble nature of ball lightning

A. I. Mesenyashin

Appl. Phys. Lett. 58, 2713 (1991); http://dx.doi.org/10.1063/1.104766 (3 pages) | Cited 4 times

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Ball lightnings are considered to be electrostatically bipolar charged shells of orderly oriented water molecules. The time of life of this model for ball lightnings of typical sizes is shown to exceed tens of seconds, the energy being caused by orientation of dipolar water molecules. Issues pertaining to ball lightning formation, stability, and specialties of motion are discussed.
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41.20.Cv Electrostatics; Poisson and Laplace equations, boundary-value problems
41.20.Gz Magnetostatics; magnetic shielding, magnetic induction, boundary-value problems
52.80.Mg Arcs; sparks; lightning; atmospheric electricity
92.60.Pw Atmospheric electricity, lightning
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