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17 Jun 1991

Volume 58, Issue 24, pp. 2727-2856

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Compression of nonamplified femtosecond pulses using nonlinear organic fibers

Mikio Yamashita, Kenji Torizuka, Takafumi Uemiya, and Junichi Shimada

Appl. Phys. Lett. 58, 2727 (1991); http://dx.doi.org/10.1063/1.104767 (2 pages) | Cited 5 times

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It is shown that a 39 fs output pulse from a colliding‐pulse mode‐locked cw dye laser is directly compressed to 22 fs, without amplification, using a highly nonlinear 4‐(N, N‐dimethylamino)‐3‐acetamidonitrobenzene single‐crystal cored fiber followed by a dispersive delay line of a grating pair.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.81.Dp Propagation, scattering, and losses; solitons
42.79.Hp Optical processors, correlators, and modulators
42.70.-a Optical materials

Passive transverse‐mode organization in a photorefractive oscillator with saturable absorber

Baruch Fischer, Ofer Werner, Moshe Horowitz, and Aaron Lewis

Appl. Phys. Lett. 58, 2729 (1991); http://dx.doi.org/10.1063/1.104768 (3 pages) | Cited 5 times

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We present and demonstrate a self‐transverse‐mode organization effect (passive transverse mode locking?) in a cavity that contains a saturable absorber. It gives narrowing and filamentation of the oscillating beam in the region of the absorber. In the demonstration, we have used a resonator formed by two photorefractive phase conjugate mirrors. The saturable absorber was bacteriorhodopsin in a polymer film. Light powers of 1–100 mW were used.
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42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.30.Lr Modulation and optical transfer functions

Second‐harmonic generation of blue light in a LiTaO3 waveguide

Kiminori Mizuuchi, Kazuhisa Yamamoto, and Tetsuo Taniuchi

Appl. Phys. Lett. 58, 2732 (1991); http://dx.doi.org/10.1063/1.104769 (3 pages) | Cited 50 times

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We report blue light generation in a LiTaO3 waveguide by quasi‐phase‐matched (QPM) second‐harmonic generation (SHG). A periodically domain‐inverted structure for QPM is fabricated in LiTaO3 by proton exchange of a selective Ta‐masked area using pyrophosphoric acid followed by heat treatment. By utilizing this structure and low‐loss proton‐exhanged waveguides, we have realized a third‐order QPM‐SHG device. As a result, 0.13 mW of harmonic blue light was generated for a conversion efficiency of 18%/W.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Gn Optical waveguides and couplers
42.70.-a Optical materials
42.82.-m Integrated optics

Controllable enhancement of excitonic spontaneous emission by quantum confined Stark effect in GaAs quantum wells embedded in quantum microcavities

N. Ochi, T. Shiotani, M. Yamanishi, Y. Honda, and I. Suemune

Appl. Phys. Lett. 58, 2735 (1991); http://dx.doi.org/10.1063/1.104770 (3 pages) | Cited 35 times

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Controllable enhancement of excitonic spontaneous emission is demonstrated with the tuning of emission wavelength by electric fields applied to GaAs single quantum wells located inside half‐wavelength microcavities at low temperature, ∼50 K. Radiation patterns of the spontaneous emission from the microcavities, containing the quantum wells are found to be well controlled by the electric fields.
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78.45.+h Stimulated emission
78.55.Hx Other solid inorganic materials
71.35.-y Excitons and related phenomena
85.60.Jb Light-emitting devices

Dependence of polarization, gain, linewidth enhancement factor, and K factor on the sign of the strain of InGaAs/InP strained‐layer multiquantum well lasers

L. F. Tiemeijer, P. J. A. Thijs, P. J. de Waard, J. J. M. Binsma, and T. v. Dongen

Appl. Phys. Lett. 58, 2738 (1991); http://dx.doi.org/10.1063/1.104771 (3 pages) | Cited 30 times

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The sign of the strain in a multiquantum well (MQW) active layer of an InGaAs/InP laser determines whether lasing occurs from the electron–heavy hole transition or from the electron‐light hole transition. Lasing from the electron‐light hole transition is reported to provide a much better performance than predicted by theory. It is concluded that this gives the best device performance, providing a higher differential gain, a lower threshold current, a record low linewidth enhancement factor of 1.5, and a K factor of 0.22 ns, potentially allowing a 3 dB modulation bandwidth of 40 GHz.
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42.55.Px Semiconductor lasers; laser diodes
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Dielectric and optical properties of substrates for high‐temperature superconductor films

David Reagor and Fernando Garzon

Appl. Phys. Lett. 58, 2741 (1991); http://dx.doi.org/10.1063/1.104772 (3 pages) | Cited 8 times

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The dielectric constants ϵ of LaAlO3, NdGaCO3 and MgO substrates were measured using a dielectric filled resonant cavity. Precise values of ϵ were obtained for NdGaO3 and MgO. An inhomogeneous dielectric constant was observed for LaAlO3. Optical studies indicated that the extensive twinning in this material was the source of the inhomogeneity.
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78.66.-w Optical properties of specific thin films
77.22.Ch Permittivity (dielectric function)
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
85.25.Qc Superconducting surface acoustic wave devices and other superconducting devices

GexSi1−x optical directional coupler

Robert A. Mayer, K. H. Jung, T. Y. Hsieh, Dim‐Lee Kwong, and Joe C. Campbell

Appl. Phys. Lett. 58, 2744 (1991); http://dx.doi.org/10.1063/1.104773 (2 pages) | Cited 3 times

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We have fabricated and characterized the first GexSi1−x optical directional couplers. These structures were fabricated from GexSi1−x grown by rapid thermal processing chemical vapor deposition. The average attenuation of single, straight waveguide sections was 3.3 dB/cm at a wavelength of 1.52 μm. For the directional couplers, the coupling coefficient was 3.9 cm−1 for a waveguide separation of 1.5 μm.
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42.79.Gn Optical waveguides and couplers
42.70.-a Optical materials
85.60.-q Optoelectronic devices
78.20.Jq Electro-optical effects

Polarization‐switchable microchip lasers

J. J. Zayhowski

Appl. Phys. Lett. 58, 2746 (1991); http://dx.doi.org/10.1063/1.105229 (3 pages) | Cited 2 times

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Using a novel technique, we are able to controllably switch the polarization of microchip lasers in under 5 μs. The technique is applicable to a broad variety of lasers and theoretical modeling indicates that switching rates of several megahertz are possible.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems

Efficient vertical coupling of photodiodes to InGaAsP rib waveguides

R. J. Deri, W. Doldissen, R. J. Hawkins, R. Bhat, J. B. D. Soole, L. M. Schiavone, M. Seto, N. Andreadakis, Y. Silberberg, and M. A. Koza

Appl. Phys. Lett. 58, 2749 (1991); http://dx.doi.org/10.1063/1.104774 (3 pages) | Cited 13 times

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We demonstrate vertical integration of InGaAs mesa photodiodes with InGaAsP rib waveguides employing an intermediate optical impedance matching layer. The diode length necessary for 90% light absorption at 1.52 μm wavelength was 42 μm, a threefold reduction in diode length with respect to previous work employing similar waveguides without a matching layer. The quantum efficiency was observed to be almost independent of the optical wavelength and polarization. The influence of spatial transient intensity redistribution effects on these devices is investigated in detail.
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42.82.-m Integrated optics
85.60.Dw Photodiodes; phototransistors; photoresistors
42.79.Gn Optical waveguides and couplers

Microampere threshold current operation of GaAs and strained InGaAs quantum well lasers at low temperatures (5 K)

L. E. Eng, A. Sa’ar, T. R. Chen, I. Gravé, N. Kuze, and A. Yariv

Appl. Phys. Lett. 58, 2752 (1991); http://dx.doi.org/10.1063/1.104775 (3 pages) | Cited 7 times

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The operation of ultralow threshold current GaAs and InGaAs quantum well lasers at cryogenic temperatures has been studied. In particular the threshold current Ith and lasing wavelength of GaAs and strained InGaAs lasers have been measured as a function of temperature from 300 down to 5 K. Ith can in both lasers be characterized by a linear function of temperature up to 200 K, with a significantly (2.5×) larger dIth/dT for the GaAs laser. We measured a minimum threshold current of 120 μA for the GaAs laser and 165 μA for the InGaAs laser at 5 K. We derive a simple expression for the transparency carrier density as a function of temperature and effective masses to explain our results.
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42.55.Px Semiconductor lasers; laser diodes
85.60.Jb Light-emitting devices

Structural properties of CdTe‐ZnTe strained‐layer superlattice grown on GaAs by hot‐wall epitaxy

I. Sugiyama, A. Hobbs, O. Ueda, K. Shinohara, and H. Takigawa

Appl. Phys. Lett. 58, 2755 (1991); http://dx.doi.org/10.1063/1.104776 (3 pages) | Cited 12 times

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CdTe‐ZnTe strained‐layer superlattices (SLSs) were grown on GaAs by hot‐wall epitaxy. The individual layer thickness of the SLS is well controlled and the thickness fluctuation is less than ±1 monolayer. High‐resolution transmission electron microscopy images show coherent SLS growth. We found that two‐thirds of the threading dislocations can be reduced by inserting the SLS in CdTe/GaAs.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.35.Dv Composition, segregation; defects and impurities

Hydrogen loss from laser‐annealed amorphous hydrogenated carbon films studied by secondary‐ion mass spectrometry

V. Yu. Armeyev, E. N. Loubnin, V. G. Ralchenko, and V. E. Strelnitsky

Appl. Phys. Lett. 58, 2758 (1991); http://dx.doi.org/10.1063/1.104777 (3 pages) | Cited 10 times

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Secondary‐ion mass spectrometry was used to measure the amount of hydrogen retained in dense (ρ =2.4 g/cm3) amorphous hydrogenated carbon films subjected to Ar+ laser annealing in intensity range I=(1–6)×105 W/cm2. Hydrogen effusion, accelerating with laser power, is accompanied by a decrease of the film density and strengthening of the carbon skeleton that is interpreted as a transformation of the film from amorphous to a graphite‐like state.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
81.40.Gh Other heat and thermomechanical treatments

Sub‐100 nm lines produced by direct laser ablation in polyimide

H. M. Phillips, D. L. Callahan, R. Sauerbrey, G. Szabó, and Z. Bor

Appl. Phys. Lett. 58, 2761 (1991); http://dx.doi.org/10.1063/1.104778 (3 pages) | Cited 43 times

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Periodic line structures with a period of 167 nm and linewidths varying from 35 to 100 nm have been produced on polyimide by direct ablation with a KrF laser using an interferometric technique. Since ablation is a nonlinear process, the resolution can exceed that expected from the wavelength and numerical aperture of the system and the linewidth can be controlled by varying the laser fluence. This externally generated period of 167 nm prevents the spontaneous growth of periodic surface structures due to radiation remnants.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Mechanically alloyed nanocrystalline Ni‐Mo powders: A new technique for producing active electrodes for catalysis

M. L. Trudeau, J. Y. Huot, and R. Schulz

Appl. Phys. Lett. 58, 2764 (1991); http://dx.doi.org/10.1063/1.104779 (3 pages) | Cited 10 times

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We report on the effect of strong mechanical deformations on various mixtures of Ni and Mo metallic powders. The high‐energy mechanical alloying process produces metastable fcc nanocrystals of Ni with a large amount of Mo in solid solution. The solubility limit of Mo in fcc Ni at room temperature is directly related to the total interface area between the crystallites. These new solids show an extremely high electrocatalytic activity for the hydrogen evolution reaction (HER) in alkaline solutions which can be directly related to their nanostructure.
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81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
82.45.-h Electrochemistry and electrophoresis
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Optimization of barrier thickness for efficient carrier capture in graded‐index and separate‐confinement multiple quantum well lasers

P. W. M. Blom, J. E. M. Haverkort, and J. H. Wolter

Appl. Phys. Lett. 58, 2767 (1991); http://dx.doi.org/10.1063/1.104780 (3 pages) | Cited 29 times

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We present results from numerical calculations on the carrier capture efficiency in separate‐ confinement and graded‐index separate‐confinement multiple quantum well (MQW) lasers. We find that the capture time oscillates as a function of the well width as well as the barrier width between the wells, due to a changing overlap of the barrier wave functions with the bound states in the wells. We show that one order of magnitude improvement in the carrier capture efficiency can be accomplished by properly choosing the dimensions of the layers in the active region of the MQW laser.
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42.55.Px Semiconductor lasers; laser diodes
78.55.Cr III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Carbon doping in AlGaAs for AlGaAs/GaAs graded‐base heterojunction bipolar transistor by flow‐rate modulation epitaxy

Hiroshi Ito and Toshiki Makimoto

Appl. Phys. Lett. 58, 2770 (1991); http://dx.doi.org/10.1063/1.104781 (3 pages) | Cited 3 times

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This letter investigates carbon doping in AlGaAs using flow‐rate modulation epitaxy (FME). The tendency of hole concentration increasing with Al composition is explained by the thermal decomposition of trimethylaluminum molecules on the substrate surface. The highest hole concentration obtained is 3×1020 cm−3 in Al0.4Ga0.6As layers. An AlGaAs/GaAs heterojunction bipolar transistor with an FME‐grown compositionally graded carbon‐doped base layer was fabricated for the first time. It exhibits a current gain of 25 with 2×1019 cm−3 base doping.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
85.30.Pq Bipolar transistors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
72.20.Fr Low-field transport and mobility; piezoresistance

Thermally stable low resistance ohmic contacts to n‐type gallium arsenide: Magnetron cathodic sputter‐deposited NiInW contacts

M. C. Hugon, B. Agius, F. Varniere, C. Dubon‐Chevallier, J. F. Bresse, and M. Froment

Appl. Phys. Lett. 58, 2773 (1991); http://dx.doi.org/10.1063/1.104782 (3 pages) | Cited 4 times

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W/Ni0.9‐In0.1 refractory ohmic contacts presenting low specific resistivity have been formed on n‐type GaAs by magnetron cathodic sputtering and subsequently annealed by rapid thermal processing at 850 °C for 10 s. The increase of Ni‐In film thickness (with a W layer of 80 nm) stimulated the Schottky‐to‐ohmic behavior conversion with a minimum specific resistivity value of 10−5 Ω cm2. By increasing the W layer thickness to 160 nm, the specific resistivity was dropped to a minimum value of 10−6 Ω cm2. Such a low value was attributed to the presence of InGaAs phase. The W/Ni0.9‐In0.1 contact showed excellent thermal stability at 400 °C and during 100 h.
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73.40.Cg Contact resistance, contact potential
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.Cd Deposition by sputtering

Synchrotron radiation excited Si epitaxial growth using disilane gas source molecular beam system

Jun‐ichi Takahashi, Yuichi Utsumi, Housei Akazawa, Izumi Kawashima, and Tsuneo Urisu

Appl. Phys. Lett. 58, 2776 (1991); http://dx.doi.org/10.1063/1.104783 (3 pages) | Cited 24 times

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Silicon photoepitaxy excited by synchrotron radiation (SR) has been observed for the first time. The epitaxial growth is observed even at lower than a 400 °C substrate temperature. The surface of the as‐grown film exhibits a 2×1 reconstruction reflection high‐energy electron diffraction pattern, indicating two‐dimensional growth. At lower than 600 °C, the SR‐irradiation growth rate is larger than that of thermal growth. This result suggests that SR irradiation enhances the dynamic surface reactions, such as desorption of hydrogen and surface migration of adsorbed species.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Epi‐less bond‐and‐etch‐back silicon‐on‐insulator by MeV ion implantation

W. P. Maszara, P. P. Pronko, and A. W. McCormick

Appl. Phys. Lett. 58, 2779 (1991); http://dx.doi.org/10.1063/1.104784 (3 pages) | Cited 6 times

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A modified approach to silicon‐on‐insulator (SOI) by bond‐and‐etch‐back technology was studied where a high‐energy (MeV) boron implant was utilized as an etch stop to eliminate the need for an epitaxial layer growth in forming a device film. Also a second (retro) MeV implant, applied after the first stage of the etch‐back process, was investigated as an improved method for achieving uniform thinning of a thick (3 μm) SOI film. Significantly improved thickness uniformities (σ<10 nm across a 3×3 in. area) were obtained by this method for a 490‐nm‐thick silicon device film.
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61.72.uf Ge and Si
61.80.Jh Ion radiation effects

Correlation between preirradiation channel mobility and radiation‐induced interface‐trap charge in metal‐oxide‐semiconductor transistors

John H. Scofield, M. Trawick, P. Klimecky, and D. M. Fleetwood

Appl. Phys. Lett. 58, 2782 (1991); http://dx.doi.org/10.1063/1.104760 (3 pages) | Cited 9 times

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We find a strong correlation between preirradiation channel resistance and radiation‐induced interface‐trap charge in n‐channel metal‐oxide‐semiconductor (MOS) transistors. While it has long been known that the postirradiation mobility of MOS transistors degrades with exposure to ionizing radiation, we believe this is the first time that differences in the postirradiation interface‐trap charge have been linked to differences in preirradiation device parameters. A simple model is presented that relates the observed variations in preirradiation channel resistance to scattering from defects at the Si/SiO2 interface which may be precursors to the radiation‐induced interface‐trap charge.
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61.85.+p Channeling phenomena (blocking, energy loss, etc.)
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.70.+m Noise processes and phenomena
85.30.De Semiconductor-device characterization, design, and modeling

Role of amphoteric defects in the formation of metal/GaAs Schottky barriers

T. Zhang and T. W. Sigmon

Appl. Phys. Lett. 58, 2785 (1991); http://dx.doi.org/10.1063/1.104761 (3 pages) | Cited 2 times

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The effect of near interface bulk defects on metal/GaAs Schottky barriers, calculated using a modified amphoteric native defect (MAND) model, is shown to explain the measured experimental data. The simulation results successfully predict the trend in barrier heights for interfaces which undergo thermal processing for both n‐ and p‐type substrates. It also correctly gives the surface Fermi level positions for pulsed laser melted GaAs which contain a large quantity of As vacancies. The MAND model provides an alternative approach to the understanding of the Schottky barrier formation mechanism on GaAs.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
85.30.De Semiconductor-device characterization, design, and modeling

Characterization of Ga2Se3 at ZnSe/GaAs heterovalent interfaces

J. Qiu, D. R. Menke, M. Kobayashi, R. L. Gunshor, D. Li, Y. Nakamura, and N. Otsuka

Appl. Phys. Lett. 58, 2788 (1991); http://dx.doi.org/10.1063/1.104762 (3 pages) | Cited 16 times

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Despite the valence difference across the junction, it has been shown that ZnSe/GaAs epilayer/epilayer interface state densities can be reduced to values comparable to the (Al,Ga)As/GaAs interface. We have previously reported a transmission electron microscopy study indicating that ZnSe/GaAs structures exhibiting low interface state densities are associated with the formation of an interfacial layer of zinc‐blende Ga2Se3. In this letter we describe a procedure whereby an interfacial layer can be deliberately introduced prior to nucleation of ZnSe. In situ x‐ray photoelectron spectroscopy is used to study the nature of the bonding at the interfacial layer. A comparison of the Se 3d core level features from the ZnSe epilayer surface, a Se‐reacted GaAs surface, and from a separately grown Ga2Se3 epilayer, clearly indicates the same Se bonding characteristic for the Se‐reacted interfacial layer and the Ga2Se3 epilayer.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Ga II-VI semiconductors
68.35.Fx Diffusion; interface formation

Electron and hole impact ionization coefficients in GaAs/Al0.45Ga0.55As/Al0.3Ga0.7As coupled well systems

P. K. Bhattacharya, Y. Zebda, and J. Singh

Appl. Phys. Lett. 58, 2791 (1991); http://dx.doi.org/10.1063/1.104763 (3 pages) | Cited 5 times

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We have measured electron and hole multiplication factors and impact ionization coefficients in 550 Å GaAs/500 Å Al0.3Ga0.7As quantum wells with an intermediate Al0.45Ga0.55As barrier (50 and 100 Å) inserted in the well region. It is seen that while the measured value of α(E) is insensitive to the position of the intermediate barrier in the well, the value of β(E) is very sensitive. The value of α/β varies from less than unity to 5, depending on the position of this barrier. These results suggest that hole confinement and scattering play a major role in making the value of α/β greater than unity in these multilayered structures.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Dw Photodiodes; phototransistors; photoresistors

Reflection high‐energy electron diffraction observation of GaAs surface‐prepared ultrasonic running de‐ionized water treatment

Y. Hirota, Y. Homma, and K. Sugii

Appl. Phys. Lett. 58, 2794 (1991); http://dx.doi.org/10.1063/1.104764 (3 pages) | Cited 10 times

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GaAs (001) surface ultrasonically cleaned under running de‐ionized water (U‐RDIW) is investigated by reflection high‐energy electron diffraction (RHEED). The RHEED observations of U‐RDIW‐treated surfaces show a spotty (1×1) pattern at room temperature and a (2×1) streaky surface reconstruction pattern at 360 °C. The experimental results indicate that chemically clean and damage‐free GaAs surfaces can be produced by U‐RDIW treatment. We discuss surface structures before/after heating using a hydrogen‐ terminated model.
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81.65.-b Surface treatments
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Microstructure of erbium‐implanted Si

D. J. Eaglesham, J. Michel, E. A. Fitzgerald, D. C. Jacobson, J. M. Poate, J. L. Benton, A. Polman, Y.‐H. Xie, and L. C. Kimerling

Appl. Phys. Lett. 58, 2797 (1991); http://dx.doi.org/10.1063/1.104739 (3 pages) | Cited 100 times

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A study is presented of the relation between microstructure and 1.54 μm photoluminescence (PL) in high‐energy ion‐implantated Er in Si as a function of implant dose, energy, and temperature and subsequent anneal. Transmission electron microscopy (TEM) of material implanted at 500 keV and ≳100 °C and annealed at 900 °C to activate the Er PL suggests the solubility of Er in Si to be ≊1.3±0.4× 1018 cm−3 at 900 °C. Precipitates take the form of platelets (probably ErSi2) ≊100–300 Å in diameter and ≊10 Å thick. The 1.54 μm PL saturates at ≊5× 1017 cm−3, before the apparent solubility limit. Layers in which the Si is fully amorphized and subsequently regrown by solid phase epitaxy during an anneal show increased Er incorporation in the crystalline Si but segregation at the amorphous‐crystalline interface. In buried amorphous layers regrown from top and bottom, segregation leads to a line of high Er concentration near the center of the layer: Regrowth from a single interface leads to a segregation pileup of Er at the interface until the precipitation threshhold is reached.
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81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations
61.72.uf Ge and Si
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
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