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21 Jan 1991

Volume 58, Issue 3, pp. 211-314

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Experimental verification of a form‐birefringent polarization splitter

K. Shiraishi, T. Sato, and S. Kawakami

Appl. Phys. Lett. 58, 211 (1991); http://dx.doi.org/10.1063/1.104691 (2 pages) | Cited 14 times

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Experimental verification is made of a new polarization splitter which utilizes artificial anisotropic dielectrics. The splitter is composed of layers of periodically laminated SiO2/TiO2 thin films. The SiO2 and TiO2 films are alternately deposited by rf sputtering and reactive dc sputtering, respectively. The thickness of each layer is 50 nm, while the total number of the layers amounts to 2000. The measured polarization split angles are 5.7° (λ=0.63 μm) and 5.1° (λ=1.3 μm), being roughly the same as those predicted.
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42.79.Ci Filters, zone plates, and polarizers
42.81.Gs Birefringence, polarization
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.70.-a Optical materials

Picosecond optical parametric amplification in lithium triborate

J. Y. Zhang, J. Y. Huang, Y. R. Shen, Chuangtian Chen, and Bochang Wu

Appl. Phys. Lett. 58, 213 (1991); http://dx.doi.org/10.1063/1.104692 (3 pages) | Cited 12 times

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We report the performance of a type‐I lithium triborate (LBO) optical parametric amplifier pumped by 15 ps, 355 nm laser pulses. It is seen that with proper design, LBO can be as efficient as barium borate for such an application.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.-a Optical materials
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Flashlamp pumped Cr:LiSrAlF6 laser

Martin Stalder, Bruce H. T. Chai, and Michael Bass

Appl. Phys. Lett. 58, 216 (1991); http://dx.doi.org/10.1063/1.104693 (3 pages) | Cited 24 times

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Tunable, flashlamp‐pumped laser properties are discribed for the crystal Cr:LiSrAlF6 (Cr:LiSAF) in both long pulse and Q‐switched modes of operation. Slope efficiencies of 5%, overall efficiency of 3%, and a tuning range from 780 to 1010 nm are reported.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Gain spectra and gain compression of strained‐layer multiple quantum well optical amplifiers

J. M. Wiesenfeld, G. Raybon, U. Koren, G. Eisenstein, and C. A. Burrus

Appl. Phys. Lett. 58, 219 (1991); http://dx.doi.org/10.1063/1.104694 (3 pages) | Cited 5 times

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Optical amplifiers with strained‐layer multiple quantum well active regions are shown to exhibit a bandwidth of 100 nm with a saturation output power larger than 25 mW. For a 780‐μm‐long device, the small‐signal gain exceeds 25 dB. The combination of high gain with large saturation output power is obtained by properly tailoring the mode confinement factor and differential gain coefficient of the strained‐layer gain medium.
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42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Efficient generation of 380 fs pulses of THz radiation by ultrafast laser pulse excitation of a biased metal‐semiconductor interface

N. Katzenellenbogen and D. Grischkowsky

Appl. Phys. Lett. 58, 222 (1991); http://dx.doi.org/10.1063/1.104695 (3 pages) | Cited 86 times

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We have demonstrated a new method of generating pulses of freely propagating THz electromagnetic radiation. The resulting 380 fs pulses are the shortest directly measured THz pulses in free space to date and are more powerful than those generated by Hertzian dipoles or by resonant dipole antennas. Temporal features as short as 190 fs were observed on these THz radiation pulses and thereby, illustrate an ultrafast receiver response time.
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78.47.-p Spectroscopy of solid state dynamics
72.20.Fr Low-field transport and mobility; piezoresistance
73.40.Ns Metal-nonmetal contacts
78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures

Thermal stability of electro‐optic response in poled polyimide systems

J. W. Wu, J. F. Valley, S. Ermer, E. S. Binkley, J. T. Kenney, G. F. Lipscomb, and R. Lytel

Appl. Phys. Lett. 58, 225 (1991); http://dx.doi.org/10.1063/1.104696 (3 pages) | Cited 87 times

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Using polyimide as host in a guest‐host thin film we demonstrate the first poled‐polymer electro‐optic response stable at temperatures up to 150 °C (samples poled and cured at 250 °C). A coplanar‐electrode poling geometry is used so that the molecular alignment of the guest dye between the electrodes is coincident with the free volume of the host. We hypothesize that ‘‘high’’ temperature poling during the imidization process, when the polyimide forms rings and densifies, accounts for the excellent poled response stability.
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78.20.Jq Electro-optical effects
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.82.-m Integrated optics
85.60.-q Optoelectronic devices

Demonstration of InGaAs/AlGaAs strained‐layer distributed‐feedback grating‐surface‐emitting lasers with a buried second‐order grating structure

S. K. Liew, N. W. Carlson, D. P. Bour, G. A. Evans, and E. Van Gieson

Appl. Phys. Lett. 58, 228 (1991); http://dx.doi.org/10.1063/1.104697 (3 pages) | Cited 5 times

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We have fabricated InGaAs/AlGaAs strained‐layer distributed‐feedback grating‐surface‐emitting lasers with a buried grating structure. The device consists of a pumped distributed‐feedback section terminated on both sides by unpumped distributed Bragg reflector sections. cw operation in a stable single longitudinal mode is achieved up to six times threshold. The threshold current density is ∼600 A/cm2. The far‐field beam divergence is predominantly single lobed and diffraction limited. The spectral linewidth is 1.0 MHz at an output power of 8 mW.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking

Tunable near‐infrared radiation by difference frequency mixing in beta barium borate crystal

G. C. Bhar, U. Chatterjee, and S. Das

Appl. Phys. Lett. 58, 231 (1991); http://dx.doi.org/10.1063/1.104698 (3 pages) | Cited 3 times

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Noncollinear difference frequency mixing is reported for the first time in a barium borate crystal that generates near‐infrared radiation tunable from 2.04 to 3.42 μm. The technique apart from verifying a very simple relation correlating the phase‐matching angle with the noncollinear angle of the interacting beams provides a simple alternative scheme for generating coherent radiation in this important spectral range.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.-a Optical materials
42.72.-g Optical sources and standards
78.20.-e Optical properties of bulk materials and thin films

Determination of the gain nonlinearity time constant in 1.3 μm semiconductor lasers

J. Eom, C. B. Su, W. Rideout, R. B. Lauer, and J. S. LaCourse

Appl. Phys. Lett. 58, 234 (1991); http://dx.doi.org/10.1063/1.104699 (3 pages) | Cited 4 times

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By comparison of the measured K factors (ratio of the damping factor to the square of the resonance frequency) of distributed feedback and Fabry–Perot lasers, it is found that the relaxation time associated with nonlinear gain for 1.3 μm InGaAsP lasers is about 0.1 ps. This short time constant is consistent with spectral hole burning being the dominant process responsible for the nonlinear gain.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

Electric field measurement in the cathode sheath of a hydrogen glow discharge

C. Barbeau and J. Jolly

Appl. Phys. Lett. 58, 237 (1991); http://dx.doi.org/10.1063/1.104700 (3 pages) | Cited 24 times

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Spatially resolved electric field measurements in the cathode region of a dc glow discharge in hydrogen are performed using polarization‐dependent Stark broadening of plasma‐induced emission of the Balmer lines. The large concentrations of excited atoms in the sheath provide an accurate, sensitive measure of discharge electric fields.
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52.80.Hc Glow; corona
52.70.Ds Electric and magnetic measurements
52.25.Mq Dielectric properties

Grazing angle optical emission interferometry for end‐point detection

David Angell and Gottlieb S. Oehrlein

Appl. Phys. Lett. 58, 240 (1991); http://dx.doi.org/10.1063/1.104701 (3 pages) | Cited 4 times

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Light emitted from a plasma during reactive ion etching and reflected by the wafer surface at a grazing angle is utilized to determine the remaining film thickness with an accuracy of ±30 Å. This promises a more flexible etching approach, e.g., tailoring the final stage of etching to minimize lattice damage.
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81.65.-b Surface treatments
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
61.80.Jh Ion radiation effects
07.60.Ly Interferometers

Preparation of Bi4Ti3O12 films on a single‐crystal sapphire substrate with electron cyclotron resonance plasma sputtering

H. Masumoto, T. Goto, Y. Masuda, A. Baba, and T. Hirai

Appl. Phys. Lett. 58, 243 (1991); http://dx.doi.org/10.1063/1.104702 (3 pages) | Cited 15 times

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Bi‐Ti‐O oxide thin films were prepared on a sapphire single‐crystal substrate by electron cyclotron resonance (ECR) plasma sputtering. The target used was a sintered Bi4Ti3O12(BIT) and the substrate was controlled in the temperature range 400–640 °C(Tsub). The film sputtered at Tsub=400 °C was a pyrochlore type oxide(Bi2Ti2O7), which changed to a Bi4Ti3O12 oxide in the polycrystalline state at 500 °C and in the single crystalline state at 640 °C. In the film sputtered at 640 °C, the (001) plane of the Bi4Ti3O12 grew parallel to the (1120) and (1102) planes of the sapphire substrate, and the (104) plane of Bi4Ti3O12 grew parallel to the (0001) plane of the sapphire substrate. The deposition rate was about 200 Å/min independent of the sputtering conditions.
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81.15.Cd Deposition by sputtering
52.50.Gj Plasma heating by particle beams
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Evidence for ledge growth and lateral epitaxy of diamond single crystals synthesized by the combustion flame technique

K. V. Ravi and A. Joshi

Appl. Phys. Lett. 58, 246 (1991); http://dx.doi.org/10.1063/1.104703 (3 pages) | Cited 37 times

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The synthesis of diamond at high temperatures (≳1000 °C) utilizing the combustion flame technique is shown to result in the growth of diamond single crystals with a {100} habit. Evidence for ledge growth and lateral epitaxy of diamond on nondiamond substrates is presented and it is postulated that the propagation of {100} faces is enhanced by the presence of oxidizing specie in the flame ambient that preferentially remove nondiamond bonded species from the deposits as well as etch the diamond surface to create growth ledges. The ledges are most readily formed on {100} surfaces and single‐crystal growth occurs by the lateral propagation of the ledges created by oxidation.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Epitaxy of GdSi≊1.7 on 〈111〉Si by solid phase reaction

G. Molnár, I. Gerõcs, G. Petõ, E. Zsoldos, J. Gyulai, and E. Bugiel

Appl. Phys. Lett. 58, 249 (1991); http://dx.doi.org/10.1063/1.104704 (2 pages) | Cited 11 times

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Epitaxial hexagonal GdSi≊1.7 was grown by in situ vacuum annealing of 50 and 250 nm Gd layers on 〈111〉 silicon. The epitaxy was investigated by x‐ray and electron diffraction measurements.
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81.15.Np Solid phase epitaxy; growth from solid phases
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
61.05.cf X-ray scattering (including small-angle scattering)
61.05.cj X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.

New stacked capacitor structure using hemispherical‐grain polycrystalline‐silicon electrodes

H. Watanabe, N. Aoto, S. Adachi, T. Ishijima, E. Ikawa, and K. Terada

Appl. Phys. Lett. 58, 251 (1991); http://dx.doi.org/10.1063/1.104705 (3 pages) | Cited 10 times

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A new technology which makes storage electrode surfaces uneven has been developed for realizing 64 Mbit dynamic random access memories (DRAMs). This technology utilizes a Si film which is deposited by low‐pressure chemical vapor deposition at 550 °C and has hemispherical grains (HSG). The surface area of the HSG‐Si film is about twice as large as Si films deposited at other temperatures. The specific temperature, 550 °C, corresponds to the transition temperature of the film structure from amorphous to polycrystalline. By applying the HSG‐Si film as the storage electrode of a stacked capacitor, a capacitance of twice the value is obtained. The increase of the capacitance makes it possible to reduce the DRAM cell area, even by using a relatively thick dielectric film, thereby providing higher reliability.
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73.40.Ty Semiconductor-insulator-semiconductor structures
84.32.Tt Capacitors
68.55.-a Thin film structure and morphology
77.55.-g Dielectric thin films

Determination of V/III ratios on phosphide surfaces during gas source molecular beam epitaxy

T. P. Chin, B. W. Liang, H. Q. Hou, M. C. Ho, C. E. Chang, and C. W. Tu

Appl. Phys. Lett. 58, 254 (1991); http://dx.doi.org/10.1063/1.104706 (3 pages) | Cited 21 times

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Phosphorus‐controlled growth rate of homoepitaxial (100) InP, GaP, and AlP on GaP substrates by gas source molecular beam epitaxy was investigated. Elemental group‐III sources and thermally cracked phosphine were used. The growth rate was monitored by the specular beam intensity oscillations of reflection high‐energy electron diffraction. This technique gives exact values of V/III ratio on the surface by measuring the amount of phosphorus which is actually incorporated into the film. Here the V/III ratio is defined as P‐controlled growth rate divided by group‐III‐controlled growth rate instead of the beam flux V/III ratio. Also the phosphorus surface desorption activation energies were measured to be 0.61 eV and in the range between 0.89 and 0.97 eV for InP and GaP, respectively.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
82.20.Pm Rate constants, reaction cross sections, and activation energies

Local distribution of deep centers in GaP studied by infrared cathodoluminescence

F. Domínguez‐Adame, J. Piqueras, and P. Fernández

Appl. Phys. Lett. 58, 257 (1991); http://dx.doi.org/10.1063/1.104681 (3 pages) | Cited 24 times

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Near‐infrared cathodoluminescence (CL) in the scanning electron microscope has been used to characterize GaP:S. Spectra of as‐grown crystals show a broadband at about 1240 nm, probably related to PGa antisite defects. This emission has been found to be higher at dislocations giving a CL image opposite to the visible CL image.
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78.60.Hk Cathodoluminescence, ionoluminescence
61.72.J- Point defects and defect clusters
71.55.Eq III-V semiconductors
07.78.+s Electron, positron, and ion microscopes; electron diffractometers

Photoreflectance study of surface photovoltage effects at (100)GaAs surfaces/interfaces

X. Yin, H‐M. Chen, F. H. Pollak, Y. Chan, P. A. Montano, P. D. Kirchner, G. D. Pettit, and J. M. Woodall

Appl. Phys. Lett. 58, 260 (1991); http://dx.doi.org/10.1063/1.104682 (3 pages) | Cited 71 times

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We report a photoreflectance study of surface photovoltage (VS) effects on the determination of Fermi level pinning (VF) on (100) n‐GaAs in air and with W‐metal coverage (in situ) as a function of temperature (77 K<T<450 K) and light intensity (I). The dependence of VS on T and I can be explained by a modification the theory of M. Hecht [Phys. Rev. B 41, 7918 (1990)] yielding a value of VF=0.73±0.02 V. The effect of metal coverage is to reduce the influence of VS.
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73.50.Pz Photoconduction and photovoltaic effects
73.30.+y Surface double layers, Schottky barriers, and work functions
73.20.At Surface states, band structure, electron density of states
72.40.+w Photoconduction and photovoltaic effects

Noninteracting beams of ballistic two‐dimensional electrons

J. Spector, H. L. Stormer, K. W. Baldwin, L. N. Pfeiffer, and K. W. West

Appl. Phys. Lett. 58, 263 (1991); http://dx.doi.org/10.1063/1.104683 (3 pages) | Cited 17 times

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We demonstrate that two beams of two‐dimensional ballistic electrons in a GaAs‐AlGaAs heterostructure can penetrate each other with negligible mutual interaction analogous to the penetration of two optical beams. This allows electrical signal channels to intersect in the same plane with negligible crosstalk between the channels.
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85.30.Tv Field effect devices
72.80.Ey III-V and II-VI semiconductors
72.20.Fr Low-field transport and mobility; piezoresistance
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Resonant indirect Fowler–Nordheim tunneling in Al0.8Ga0.2As barrier

S. S. Lu, K. Lee, M. I. Nathan, and S. L. Wright

Appl. Phys. Lett. 58, 266 (1991); http://dx.doi.org/10.1063/1.104684 (3 pages) | Cited 3 times

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Oscillatory current‐voltage characteristics of n+‐GaAs/semi‐insulating Al0.8Ga0.2As/nGaAs heterojunction barriers (400 Å thick) grown by molecular beam epitaxy on n+‐GaAs (100) substrates are observed at 4 K when the heterostructures are placed under the transverse uniaxial stress along 〈011〉 direction (perpendicular to current direction) above 4 kbar. We attribute these oscillations to the resonant indirect Fowler–Nordheim tunneling via 〈011〉 oriented transverse X valleys, where the change of wave vector is required for tunneling.
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72.80.Ey III-V and II-VI semiconductors
73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Reflection electron energy loss spectroscopy during initial stages of Ge growth on Si by molecular beam epitaxy

Harry A. Atwater and Channing C. Ahn

Appl. Phys. Lett. 58, 269 (1991); http://dx.doi.org/10.1063/1.104685 (3 pages) | Cited 9 times

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Using a conventional reflection high‐energy electron diffraction gun together with an electron energy loss spectrometer, we have combined in situ measurements of inelastic scattering intensities from Si L2,3 and Ge L2,3 core losses with reflection electron diffraction data in order to analyze the initial stages of Ge heteroepitaxy on Si(001). Diffraction data indicate an initial layer‐by‐layer growth mode followed by island formation for Ge thicknesses greater than 0.8–1.1 nm. The electron energy core loss data are consistent with a simple model of grazing incidence electron scattering from the growing Ge film. Reflection electron energy loss spectroscopy is found to be highly surface sensitive, and the energy resolution and data rate are also sufficiently high to suggest that reflection electron energy loss spectroscopy may be a useful real‐time, in situ surface chemical probe during growth by molecular beam epitaxy.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)
07.78.+s Electron, positron, and ion microscopes; electron diffractometers

Densities of states below midgap determined from the space‐charge‐limited currents of holes in intrinsic hydrogenated amorphous silicon

R. M. Dawson, C. R. Wronski, and M. Bennett

Appl. Phys. Lett. 58, 272 (1991); http://dx.doi.org/10.1063/1.104658 (3 pages) | Cited 5 times

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Space‐charge‐limited currents of holes have been obtained in intrinsic hydrogenated amorphous silicon layers using p‐i‐p structures and have been used to derive the densities of states distribution between 1.0 and 0.7 eV from the hole mobility edge. The densities obtained near midgap are consistent with the measured densities of dangling bond defects located over an energy range of about 0.3 eV. At 0.7 eV from the valence‐band mobility edge, the densities are consistent with the densities expected from the Urbach edge tail states. Such space‐charge‐limited currents offer a powerful tool for the direct measurement of the densities of states below the Fermi level in a‐Si:H and its alloys.
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73.50.Fq High-field and nonlinear effects
73.20.At Surface states, band structure, electron density of states
72.80.Ng Disordered solids
72.20.Ht High-field and nonlinear effects

Growth and characterization of high current density, high‐speed InAs/AlSb resonant tunneling diodes

J. R. Söderström, E. R. Brown, C. D. Parker, L. J. Mahoney, J. Y. Yao, T. G. Andersson, and T. C. McGill

Appl. Phys. Lett. 58, 275 (1991); http://dx.doi.org/10.1063/1.104659 (3 pages) | Cited 42 times

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High quality resonant tunneling diodes have been fabricated from the InAs/AlSb material system (InAs quantum well and cladding layers, AlSb barriers) on (100)GaAs substrates. A diode with a 6.4‐nm‐thick InAs quantum well and 1.5‐nm‐thick AlSb barriers yielded a room‐temperature peak current density of 3.7×105 A cm−2 and peak‐to‐valley current ratio of 3.2. This corresponds to an available current density of 2.6×105 A cm−2, which is comparable to that of the best In0.53Ga0.47As/AlAs diodes grown on lattice‐matched substrates and is three times higher than that of the best GaAs/AlAs diode reported to date. These results were obtained in spite of a 7.2% lattice mismatch between the InAs epilayers and the GaAs substrates, which leads to a measured threading dislocation density of roughly 109 cm−2. The experimental peak voltage and current density are in good agreement with theoretical calculations based on a stationary‐state transport model with a two‐band envelope function approximation.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

EL2 related deep traps in semi‐insulating GaAs

U. V. Desnica, Dunja I. Desnica, and B. Šantić

Appl. Phys. Lett. 58, 278 (1991); http://dx.doi.org/10.1063/1.104660 (3 pages) | Cited 31 times

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Processes induced by below‐the‐gap illumination and related to defects having deep levels in liquid‐encapsulated Czochralski semi‐insulating GaAs crystals were studied. It was found that the dynamics of both optical quenching and thermal recovery (above 125 K) of thermally stimulated current signal related to six deep traps was the same as that of the EL2 related photoconductivity signal. Analysis of these results gives evidence that some of the observed deep traps in GaAs are complex defects, which might include as their constituent the EL2 defect. It means that EL2 could serve as a gettering center for other native defects and/or impurities. The proposed model is in accordance with other recently published results associating several deep traps (EL6, EL3, EL5, and EL14) with EL2.
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71.55.Eq III-V semiconductors
72.40.+w Photoconduction and photovoltaic effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Ey III-V and II-VI semiconductors

Growth of microcrystal silicon by remote plasma chemical vapor deposition

Sung Chul Kim, Moon Hyun Jung, and Jin Jang

Appl. Phys. Lett. 58, 281 (1991); http://dx.doi.org/10.1063/1.104661 (3 pages) | Cited 15 times

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We have studied the growth of microcrystal silicon films by remote plasma chemical vapor deposition as growth parameters of substrate temperature and rf power. With increasing substrate temperature, the growth rate increases because of the decrease of the etch rate. The rf power dependence shows that the growth rate decreases with increasing rf power at high power levels. The results indicate that the chemical equilibrium between the deposition and etching of Si on the growing surface gives rise to the growth of microcrystal Si, resulting in the optimum rf power and substrate temperature for the growth of microcrystalline silicon.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.60.Wm Other nonelectronic physical properties
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
72.80.Ng Disordered solids
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