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4 Feb 1991

Volume 58, Issue 5, pp. 435-547

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Poled polymers for frequency doubling of diode lasers

G. L. J. A. Rikken, C. J. E. Seppen, S. Nijhuis, and E. W. Meijer

Appl. Phys. Lett. 58, 435 (1991); http://dx.doi.org/10.1063/1.104625 (3 pages) | Cited 29 times

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We report on the design and characterization of methylmethacrylate copolymers with nonlinear optical 4‐alkoxy‐4′‐alkylsulfone stilbene sidechains, which are transparent down to 410 nm. A fairly stable, polar orientation has been obtained by means of electric field poling, resulting in a reasonably high nonlinearity (d33≤9 pm/V).
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.-a Optical materials

Characteristics of 4×4 photonic switch array with gain and high contrast

Yoshihiro Mori

Appl. Phys. Lett. 58, 438 (1991); http://dx.doi.org/10.1063/1.104626 (3 pages) | Cited 1 time

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A two‐dimensional semiconductor photonic switch array with a new operating principle based on the change of the gain coefficient in the GaAs crystal is reported. This switch realizes direct amplification and absorption of the optical signal and features optical gain of 4 dB, contrast of 9.6 dB, applied voltage of 2.2 V, and a simple planar structure. This array is applicable to photonic parallel data transmission systems.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
85.60.-q Optoelectronic devices

Effect of hot‐pressing temperature on the optical transmission of zinc sulfide

Liang A. Xue and Rishi Raj

Appl. Phys. Lett. 58, 441 (1991); http://dx.doi.org/10.1063/1.104627 (3 pages) | Cited 8 times

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Two phase mixtures of ZnS consisting of the hexagonal and the cubic phase have been prepared by hot‐pressing at different temperatures. The optical properties of these two phase composites were measured in the far infrared. The difference in the index of refraction between the cubic and the hexagonal phases produced scattering that was accentuated at large grain size. The results are correlated with the fourth power dependence of the scattering cross section on the grain size.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.30.Fs III-V and II-VI semiconductors
81.40.Tv Optical and dielectric properties related to treatment conditions
78.20.-e Optical properties of bulk materials and thin films

Measurement of very low‐loss silica on silicon waveguides with a ring resonator

R. Adar, Y. Shani, C. H. Henry, R. C. Kistler, G. E. Blonder, and N. A. Olsson

Appl. Phys. Lett. 58, 444 (1991); http://dx.doi.org/10.1063/1.104628 (2 pages) | Cited 15 times

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The loss in phosphorus‐doped silica on silicon waveguides was accurately measured using a 6‐cm‐diam ring resonator, by recording the transmission of a narrow linewidth external‐cavity laser through the resonator as a function of temperature. A finesse of 45 and resonance width of 24.2 MHz were obtained, indicating guide loss of 2.6 dB per meter, which is the best result thus far measured for these waveguides. The shift in the modes with temperature was measured in the temperature range 30–120 °C and found to be close to 1/8 Å/deg.
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85.60.-q Optoelectronic devices
42.79.Gn Optical waveguides and couplers
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects

500 GHz electrically steerable photoconducting antenna array

N. Froberg, M. Mack, B. B. Hu, X.‐C. Zhang, and D. H. Auston

Appl. Phys. Lett. 58, 446 (1991); http://dx.doi.org/10.1063/1.104629 (3 pages) | Cited 15 times

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When illuminated by a train of properly spaced ultrashort optical pulses, an array of short photoconducting dipole antennas emits a submillimeter wave beam which can be electrically steered by varying the periodicity of the voltage bias applied to the individual antenna elements.
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68.55.Nq Composition and phase identification
68.35.Fx Diffusion; interface formation
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Compact hybrid resonant optical reflector lasers with very narrow linewidths

D. A. Ackerman, M. I. Dahbura, Y. Shani, C. H. Henry, R. C. Kistler, R. F. Kazarinov, and C. Y. Kuo

Appl. Phys. Lett. 58, 449 (1991); http://dx.doi.org/10.1063/1.104603 (3 pages) | Cited 2 times

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Hybrid resonant optical reflector lasers of less than 1 cm length are described. These external cavity devices operate with very narrow linewidth approaching the resonator‐loss‐limited minimum. Best linewidth results are 7.1 kHz at 1.3 μm and 24 kHz at 1.55 μm.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Stable‐mode operation of leaky‐mode diode laser arrays at high pulsed and cw currents

J. P. Hohimer, G. R. Hadley, D. C. Craft, T. H. Shiau, S. Sun, and C. F. Schaus

Appl. Phys. Lett. 58, 452 (1991); http://dx.doi.org/10.1063/1.104604 (3 pages) | Cited 2 times

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We report stable pulsed and cw fundamental mode operation for ten‐stripe leaky‐mode diode laser arrays which use the confinement factor effect for mode control. Lasing occurs in the fundamental mode for pulsed operation (≤1 μs) up to 10× threshold and for cw operation up to 3.4× threshold. For cw operation, a thermal decoupling of the outer array stripes broadens the far field slightly but does not affect the lasing mode order. Our two‐dimensional model of these devices reproduces this decoupling of the outer array stripes when thermal effects are included.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Spectral dependence of external reflection switching from indium antimonide

S. Feng and E. A. Irene

Appl. Phys. Lett. 58, 455 (1991); http://dx.doi.org/10.1063/1.104605 (3 pages) | Cited 2 times

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We demonstrate a novel InSb optical switch that relies on an increasing absorption mechanism and uses only the surface reflection. Observations of external switching of the reflectivity of the InSb surface have been made. In this study the switching or pump beam was from a pulsed CO2 laser. The polarity of the switched out signal, the probe beam, was found to depend on the wavelength of the probe beam. This novel spectral dependence was used to demonstrate several optical logic elements.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Hp Optical processors, correlators, and modulators

Ion and neutral temperatures in electron cyclotron resonance plasma reactors

Toshiki Nakano, Nader Sadeghi, and Richard A. Gottscho

Appl. Phys. Lett. 58, 458 (1991); http://dx.doi.org/10.1063/1.104606 (3 pages) | Cited 47 times

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Ion and neutral temperatures are measured by high‐resolution laser‐induced fluorescence spectroscopy both in the source and downstream of an electron cyclotron resonance discharge through mixtures of Ar, Ar/Ne, and Ar/He. Contrary to previous reports, both ions and neutrals are found to be cold. In the source, ion temperatures perpendicular to the magnetic field are ≤0.5 eV; downstream they are ∼0.25 eV. Neutral temperatures in the source and downstream are 0.068 and 0.030 eV, respectively.
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
52.38.-r Laser-plasma interactions

Quadrupole interaction of 111Cd in the semiconductor CdS

E. Bertholdt, M. Frank, F. Gubitz, W. Kreische, Ch. Ott, B. Röseler, F. Schwab, K. Stammler, and G. Weeske

Appl. Phys. Lett. 58, 461 (1991); http://dx.doi.org/10.1063/1.104607 (2 pages) | Cited 2 times

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The time differential perturbed angular correlation technique was applied to study the electric quadrupole coupling of 111Cd in the II‐VI semiconductor CdS (20 K≤T≤1000 K). Two kinds of sample preparation were used: implantation and diffusion. Obtained results for the regular lattice sites were independent of the preparation. The measured electric field gradient (EFG) was between 6.7±0.4 MHz and 9.1±0.2 MHz. Data were confirmed by point‐charge calculations. Implantation however caused a second EFG (≊78 MHz) that was assigned to a defect due to the preceding irradiation.
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61.72.Bb Theories and models of crystal defects
61.72.U- Doping and impurity implantation
61.66.Fn Inorganic compounds

Identification of the first nucleated phase in the interfacial reactions of ultrahigh vacuum deposited titanium thin films on silicon

M. H. Wang and L. J. Chen

Appl. Phys. Lett. 58, 463 (1991); http://dx.doi.org/10.1063/1.104608 (3 pages) | Cited 30 times

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The first nucleated phase in ultrahigh vacuum deposited Ti thin films on silicon has been unambiguously identified utilizing high‐resolution transmission electron microscopy (HREM) in conjunction with optical diffractometry. Ti5Si3 was found to form first at the interface of the Ti overlayer and the amorphous interlayer. For plan‐view specimens of the samples annealed at 450 °C for 30 min, 1 and 2 h, all 15 silicide diffraction rings corresponding to interplanar spacings longer than 0.098 nm could be attributed to Ti5Si3. Ti5Si3 was also the only silicide phase that could match the symmetry and lattice spacings of the HREM images. The observation is consistent with a kinetic model which predicts that the crystalline phase with composition and structure nearest to that of the amorphous interlayer will be first nucleated.
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68.55.Nq Composition and phase identification
68.35.Fx Diffusion; interface formation
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Sputter deposition of dense diamond‐like carbon films at low temperature

Jerome J. Cuomo, James P. Doyle, John Bruley, and Joyce C. Liu

Appl. Phys. Lett. 58, 466 (1991); http://dx.doi.org/10.1063/1.104609 (3 pages) | Cited 108 times

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Thin carbon films were deposited by ion beam sputtering at temperatures of 77–1073 K. Using Rutherford backscattering spectrometry and electron energy loss spectroscopy, the trends in film density and bonding were examined as a function of deposition conditions. It has been found that film density and sp3 bonding character unexpectedly increased with increased substrate thermal conductivity and decreasing substrate temperature, reaching values of 2.9 g/cc and 50%, respectively.
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81.15.Cd Deposition by sputtering
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Effects of oxygen in TiNx on the diffusion of Cu in Cu/TiN/Al and Cu/TiNx/Si structures

J. O. Olowolafe, Jian Li, J. W. Mayer, and E. G. Colgan

Appl. Phys. Lett. 58, 469 (1991); http://dx.doi.org/10.1063/1.104610 (3 pages) | Cited 62 times

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The role of oxygen has been found to be very significant in the diffusion of Cu in Cu/TiNx/Al and Cu/TiNxOy/Al thin film structures. While no interdiffusion takes place in the Cu/TiNxOy/Al structure up to 575 °C, a substantial interdiffusion, with Cu and Al moving in opposite directions, has been found in the Cu/TiNx/Al structure below 425 °C. Both Cu/TiNx/Si and Cu/TiNxOy/Si systems have been found to be stable for temperatures below 600 °C, with TiNx degrading before TiNxOy above this temperatures. Nuclear resonances, 16O(α,α)16O (3.052 MeV) and 14N(α,α)14N (3.593 MeV), for oxygen and nitrogen respectively, were used to determine the concentration of oxygen and the stoichiometry of the titanium nitride films.
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68.35.Fx Diffusion; interface formation
85.40.Ls Metallization, contacts, interconnects; device isolation

Periodic lattice distortions as a result of lattice mismatch in epitaxial films of two‐dimensional materials

B. A. Parkinson, F. S. Ohuchi, K. Ueno, and A. Koma

Appl. Phys. Lett. 58, 472 (1991); http://dx.doi.org/10.1063/1.104611 (3 pages) | Cited 36 times

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Epilayers of transition metal dichalcogenides (TMDs) with two‐dimensional structures can be grown with molecular beam epitaxy onto other TMDs substrates without regard to lattice matching. Although there is no strong bonding between the epilayer and the substrate, the van der Waals interaction between the two hexagonally closest packed lattices results in a periodic distortion which, due to electronic effects, is prominently imaged with the scanning tunneling microscope.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Structure of the Sb‐terminated Si(100) surface

J. Nogami, A. A. Baski, and C. F. Quate

Appl. Phys. Lett. 58, 475 (1991); http://dx.doi.org/10.1063/1.104612 (3 pages) | Cited 52 times

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The structure of the Sb‐terminated Si(100) surface has been studied by scanning tunneling microscopy. The images show that the surface is terminated in a symmetric Sb dimer structure. The long‐range order of the Sb‐terminated surface is broken up by a high density of antiphase domain boundaries which accounts for the low intensity of the half‐order spots in the 2×1 low‐energy electron diffraction pattern. Images on single‐domain Si(100) substrates demonstrate that the Sb grows as an additional layer of dimers, rather than substituting for the topmost layer of Si dimers.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Electrical characterization of molecular beam epitaxial GaAs with peak electron mobilities up to ≊4×105 cm2 V−1 s−1

C. R. Stanley, M. C. Holland, A. H. Kean, M. B. Stanaway, R. T. Grimes, and J. M. Chamberlain

Appl. Phys. Lett. 58, 478 (1991); http://dx.doi.org/10.1063/1.104613 (3 pages) | Cited 13 times

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The effect of varying the temperature (Tcr) of an As4→As2 cracker furnace between 600 and 700 °C on the properties of GaAs grown by molecular beam epitaxy has been evaluated using 4–300 K Hall measurements and 4.2 K far‐infrared photoconduction spectroscopy, in an extension of earlier work on high‐mobility material (Ref. 1). The residual donors are silicon and sulphur with mid‐1013 cm−3 concentrations under As2‐growth conditions (Tcr=700 °C). By lowering Tcr, the silicon concentration is reduced substantially, leaving sulphur as the principal impurity. A 15‐μm‐thick layer grown with Tcr=650 °C has measured free‐electron densities of ≊2.8×1013 cm−3 and peak mobilities ≊4×105 cm2 V−1 s−1 at ≊28–42 K, the highest ever recorded in bulk GaAs.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.61.Ey III-V semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Elemental boron doping behavior in silicon molecular beam epitaxy

C. P. Parry, S. M. Newstead, R. D. Barlow, P. Augustus, R. A. A. Kubiak, M. G. Dowsett, T. E. Whall, and E. H. C. Parker

Appl. Phys. Lett. 58, 481 (1991); http://dx.doi.org/10.1063/1.104614 (3 pages) | Cited 24 times

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Boron‐doped Si epilayers were grown by molecular beam epitaxy (MBE) using an elemental boron source, at levels up to 2×1020 cm−3, to elucidate profile control and electrical activation over the growth temperature range 450–900 °C. Precipitation and surface segregation effects were observed at doping levels of 2×1020 cm−3 for growth temperatures above 600 °C. At growth temperatures below 600 °C, excellent profile control was achieved with complete electrical activation at concentrations of 2×1020 cm−3, corresponding to the optimal MBE growth conditions for a range of Si/SixGe1−x heterostructures.
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66.30.J- Diffusion of impurities
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Impact excitation of the erbium‐related 1.54 μm luminescence peak in erbium‐doped InP

Hideo Isshiki, Hitoshi Kobayashi, Shigemi Yugo, Tadamasa Kimura, and Toshiaki Ikoma

Appl. Phys. Lett. 58, 484 (1991); http://dx.doi.org/10.1063/1.104615 (3 pages) | Cited 34 times

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The Er‐related 1.54 μm luminescence peak has been observed in erbium‐doped InP layers by impact excitation of Er atoms with energetic carriers accelerated by electric field. Er ions were implanted into n‐type InP and Au/Sn ohmic contacts were formed on top of the surface. The Er‐related sharp peak at 1.543 μm was observed by only applying dc voltages between the electrodes over the temperature range from 77 to 360 K. Neither band‐edge emission nor impurity‐related emission were observed, although they were intense in the photoluminescence spectra of the same sample. The fine structure of the 1.54 μm peak was also different from that of photoluminescence. This 1.54 μm emission was related to erbium atoms excited through collisions with energetic electrons accelerated by the electric field.
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78.60.Fi Electroluminescence
78.55.Cr III-V semiconductors
42.70.-a Optical materials
79.20.Kz Other electron-impact emission phenomena

Solid phase epitaxial growth of amorphized InP

M. C. Ridgway, G. R. Palmer, R. G. Elliman, J. A. Davies, and J. S. Williams

Appl. Phys. Lett. 58, 487 (1991); http://dx.doi.org/10.1063/1.104616 (3 pages) | Cited 6 times

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Solid phase epitaxial growth of amorphized InP has been investigated at temperatures of 145–335 °C. The epitaxial recrystallization kinetics have been determined for both thermal and ion beam annealing using ion channeling and time‐resolved reflectivity measurements and post‐anneal, residual disorder has been characterized with transmission electron microscopy. The twin density and size distribution were significantly smaller for ion beam annealed samples, thus clearly demonstrating that ion beam annealing effectively suppresses the onset of highly defective (twinned) regrowth characteristic of thermal annealing. The substantially better crystalline quality of ion beam annealed samples contrasts with observations in GaAs where only a slight difference in post‐anneal disorder was apparent for the two annealing regimes.
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61.72.U- Doping and impurity implantation
61.80.Jh Ion radiation effects
81.15.Np Solid phase epitaxy; growth from solid phases
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Nature of the defects generated by electric field stress at the Si‐SiO2 interface

Dominique Vuillaume, Didier Goguenheim, and Jacques C. Bourgoin

Appl. Phys. Lett. 58, 490 (1991); http://dx.doi.org/10.1063/1.104617 (3 pages) | Cited 8 times

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We have characterized the density of states, the capture cross sections, and the annealing properties of the Si‐SiO2 interface defects generated during electron injection under high electric field stress. These properties are compared to those of the interface states present in as‐oxidized Si‐SiO2 structures which are known to be due primarily to the trivalent silicon defects (Pb centers), the main intrinsic defects on thermally oxidized silicon. Although the energetic distribution of the state densities and the annealing properties are similar, we found that the capture cross sections are strongly different. This leads to the conclusion that the interface defects generated by high electric field stress are not strictly identical to Pb centers, but probably ‘‘Pb‐like’’ defects. A possible model is discussed.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.Hb Impurity and defect levels; energy states of adsorbed species
61.80.Fe Electron and positron radiation effects
68.35.Dv Composition, segregation; defects and impurities

Hydrogen passivation in Cd1−xZnxTe studied by photoluminescence

Y. F. Chen, C. S. Tsai, Y. H. Chang, Y. M. Chang, T. K. Chen, and Y. M. Pang

Appl. Phys. Lett. 58, 493 (1991); http://dx.doi.org/10.1063/1.104618 (3 pages) | Cited 24 times

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It is shown for the first time that deep defects in single‐crystal CdZnTe can be passivated by atomic hydrogen. This treatment can result in a strong enhancement in the photoluminescence intensity of all excitonic transitions. In addition, it is shown that after hydrogenation, the higher‐order emission of free exciton in CdZnTe alloys is observed for the first time; the mixed bands can be separated; the LO phonon energy, the binding energy of free exciton, and the concentration of Zn content are also determined. From the experimental results it is inferred that hydrogenation not only improves the sample quality but also provides an excellent opportunity to probe the physical properties of a material.
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71.55.Gs II-VI semiconductors
78.55.Et II-VI semiconductors
85.40.Ls Metallization, contacts, interconnects; device isolation

Amorphization of ion‐implanted layers in silicon using photoacoustic detection

A. Pinto Neto, H. Vargas, and L. C. M. Miranda

Appl. Phys. Lett. 58, 496 (1991); http://dx.doi.org/10.1063/1.104619 (3 pages) | Cited 7 times

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The influence of ion implantation in the thermal properties of silicon wafers at room temperature is investigated using the photoacoustic technique. It is suggested that the observed decrease of the values of both thermal diffusivity and conductivity, as the implantation dose increases, is due to the amorphization of the implanted layer.
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61.72.uf Ge and Si
62.65.+k Acoustical properties of solids
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
72.80.Ng Disordered solids

Trivalent character of platinum in silicon

H. Zimmermann and H. Ryssel

Appl. Phys. Lett. 58, 499 (1991); http://dx.doi.org/10.1063/1.104620 (3 pages) | Cited 24 times

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A third dominant platinum level is reported. The concentrations of the new level and of the platinum donor level at 0.330 eV above the valence band are equal to each other within 20% over a range exceeding three orders of magnitude in concentration. The new level at approximately 0.067 eV above the valence band is characterized by the method of deep level transient spectroscopy. Its activation energy is shown to be dependent on the electric field. Platinum is suggested to be a double donor in p‐type silicon. All three dominant platinum levels are believed to belong to the same platinum center in silicon.
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61.72.uf Ge and Si
71.55.Ht Other nonmetals

Photoluminescence and magnetic resonance studies of Er3+ in MeV ion‐implanted GaAs

P. B. Klein, F. G. Moore, and H. B. Dietrich

Appl. Phys. Lett. 58, 502 (1991); http://dx.doi.org/10.1063/1.104621 (3 pages) | Cited 21 times

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The effects of post‐implantation annealing have been studied in MeV Er‐implanted GaAs by monitoring the Er3+ electron paramagnetic resonance (EPR) signal as well as the Er3+ and near‐band‐edge photoluminescence (PL) spectra as a function of the anneal temperature. Er3+ PL is observed from several distinct Er sites in the annealed material. In addition, the observed dependences upon anneal temperature suggest that the Er3+ PL is emitted from centers that are not in the Er3+ state at equilibrium. Absolute EPR measurements of the Er3+ concentration indicate that only a small fraction (<0.1%) of the Er in the sample is Er3+.
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78.55.Cr III-V semiconductors
76.30.Kg Rare-earth ions and impurities
61.72.U- Doping and impurity implantation

Behavior of zone‐center, subband energies in narrow, strongly coupled quantum wells

Mark L. Biermann and C. R. Stroud

Appl. Phys. Lett. 58, 505 (1991); http://dx.doi.org/10.1063/1.105223 (3 pages) | Cited 10 times

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Narrow, symmetric coupled quantum wells (CQWs) are studied using a k⋅p, pseudopotential method. GaAs wells that range in width from 11.4 to 99.0 Å and Al0.3Ga0.7As barriers that range in width from 11.4 to 17.0 Å are treated. Features of the systems such as energy positions as a function of well and barrier width, subband crossing, and subband splitting about the single well subband position are described. A simple function with subband‐dependent constants is fit to both the subband‐pair splitting as a function of barrier width and the subband energy position as a function of well width. This function provides an accurate and simple aid in CQW design for devices and experiments.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
71.15.-m Methods of electronic structure calculations
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