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11 Feb 1991

Volume 58, Issue 6, pp. 551-658

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Effect of intense and prolonged 248 nm pulsed‐laser irradiation on the properties of ultraviolet‐grade fused silica

Wing P. Leung, Murli Kulkarni, Doug Krajnovich, and Andrew C. Tam

Appl. Phys. Lett. 58, 551 (1991); http://dx.doi.org/10.1063/1.104583 (3 pages) | Cited 14 times

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We have studied changes in the absorption, temperature, ultraviolet (UV) spectrum, birefringence, and surface profile of various high‐purity ‘‘UV‐grade’’ fused silica samples during KrF excimer laser irradiation at 400 mJ/cm2 and 300 Hz and up to a total of 60 million pulses. All samples exhibit permanent and irreversible changes in the spectroscopic and physical properties. Some samples show a partial ‘‘self‐annealing’’ behavior during the irradiation in which the absorption first increases to a peak value of ∼10%/cm, and then decreases and levels off at a lower value. This may indicate the formation of a new stable state. The radiation‐induced effects are significantly affected by the laser repetition rate, annealing, and ambient temperature of the sample. For comparison, crystalline quartz is tested under similar conditions, and is found to be essentially unchanged by the radiation.
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81.40.Tv Optical and dielectric properties related to treatment conditions
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
42.25.Bs Wave propagation, transmission and absorption
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Generation of 170 GHz optical sidebands of a single‐mode semiconductor laser by nonlinear intracavity interaction

R. Nietzke, W. Elsässer, A. N. Baranov, and K. Wünstel

Appl. Phys. Lett. 58, 554 (1991); http://dx.doi.org/10.1063/1.104584 (3 pages) | Cited 6 times

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We demonstrate the generation of optical sidebands with a frequency separation of 170 GHz by nonlinear optical intracavity interaction of light from a 1.3 μm distributed feedback laser with the population pulsations caused by the longitudinal mode beating of a broad‐area laser and demonstrate a cavity‐enhanced response by approximately 45 dB.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Hp Optical processors, correlators, and modulators

Raman microprobe study of the time development of AlGaAs single quantum well laser facet temperature on route to catastrophic breakdown

W. C. Tang, H. J. Rosen, P. Vettiger, and D. J. Webb

Appl. Phys. Lett. 58, 557 (1991); http://dx.doi.org/10.1063/1.104585 (3 pages) | Cited 40 times

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The facet temperature and output power of uncoated AlGaAs single quantum well lasers operated at constant current were measured as a function of time until catastrophical breakdown. The temperature rise is observed to consist of two regimes−an initial linear temperature rise accompanied by a gradual power degradation followed by a rapid nonlinear temperature rise at what appears to be a critical temperature leading to catastrophical optical damage (COD). The time to COD and the pre‐COD facet temperature rise rate are found to have a strong dependence on the diode output power. This facet temperature behavior plus the data obtained from an argon laser probe beam induced heating experiment provide valuable information regarding the mechanisms leading to COD.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.30.Fs III-V and II-VI semiconductors
42.55.Px Semiconductor lasers; laser diodes

Nature of the infrared spectrum in band‐edge region of KTiOPO4

J. C. Jacco and G. M. Loiacono

Appl. Phys. Lett. 58, 560 (1991); http://dx.doi.org/10.1063/1.104586 (2 pages) | Cited 12 times

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The infrared transmission spectra of KTiOPO4 (KTP) have been closely inspected in the region between 4000 and 1000 cm−1 (2.5–10 μm) using single‐crystal samples of various thicknesses. The spectral information obtained reveals that the band edge at 4.5 μm is due to the first overtone of the ν3 tetrahedral phosphate fundamental vibration. A heretofore questionable absorption centered at 3.3 μm has been shown to be the second overtone of this same fundamental vibration.
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78.30.Hv Other nonmetallic inorganics
61.50.-f Structure of bulk crystals
33.20.Ea Infrared spectra

Optical waveguides in crystalline organic semiconductor thin films

D. Y. Zang, Y. Q. Shi, F. F. So, S. R. Forrest, and W. H. Steier

Appl. Phys. Lett. 58, 562 (1991); http://dx.doi.org/10.1063/1.104587 (3 pages) | Cited 30 times

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Optical waveguiding in a crystalline organic semiconductor, namely, 3,4,9,10 perylenetetracarboxylic dianhydride (PTCDA), has been demonstrated in slab and rib waveguides using both end‐fire and grating coupling at λ 1.064 μm. The effective indices of the transverse electric (TE) modes measured by means of grating coupling are in good agreement with theoretical prediction. A very low propagation loss of 2.5 dB/cm in a PTCDA rib waveguide has been determined from measurements of the scattered light intensity from the top surface of the guide.
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42.79.Gn Optical waveguides and couplers
42.70.-a Optical materials
78.20.-e Optical properties of bulk materials and thin films

Wavelength‐agile operation of an injection‐controlled XeF(C→A) laser system

Th. Hofmann, S. Yamaguchi, C. B. Dane, W. L. Wilson, R. Sauerbrey, F. K. Tittel, R. A. Rubino, and W. L. Nighan

Appl. Phys. Lett. 58, 565 (1991); http://dx.doi.org/10.1063/1.104588 (3 pages) | Cited 1 time

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The performance of a pulsed laser system consisting of an electron beam pumped XeF(C→A) amplifier injection‐controlled by a wavelength‐agile dye laser is reported. Random sequence tuning over a 27 nm spectral region, centered at 478.5 nm, was demonstrated at a 1 Hz pulse repetition frequency. Laser output energies of 0.8 J with pulse durations of 10 ns were measured.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers

Anomalous photoresponse of metal films

Mark Johnson, M. R. Beasley, T. H. Geballe, S. R. Greenfield, John J. Stankus, and M. D. Fayer

Appl. Phys. Lett. 58, 568 (1991); http://dx.doi.org/10.1063/1.104589 (3 pages) | Cited 7 times

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Current biased samples are illuminated by short pulses of laser light and voltages are measured for a range of temperature 7 K<T<350 K. Classically, no response is expected for times greater than 10 ps after the pulse arrival. However, transient signals with temperature‐independent decay times are observed in Ni and Nb samples, and a similar signal with diminished amplitude is observed in a Au sample.
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78.66.Bz Metals and metallic alloys
78.47.-p Spectroscopy of solid state dynamics
73.61.At Metal and metallic alloys

Atomic hydrogen concentration profiles at filaments used for chemical vapor deposition of diamond

L. Schäfer, C.‐P. Klages, U. Meier, and K. Kohse‐Höinghaus

Appl. Phys. Lett. 58, 571 (1991); http://dx.doi.org/10.1063/1.104590 (3 pages) | Cited 66 times

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The quantitative determination of atomic hydrogen concentrations cH in the vicinity of hot filaments is performed with two‐photon laser‐induced fluorescence. The measurements yield atomic hydrogen concentration profiles up to 28 mm from the filament surface with a spatial resolution of about 0.5 mm. The nonequilibrium nature of the hydrogen dissociation on the filament surface results in a saturation of hydrogen concentration profiles cH(r) for gas pressures above 10 mbar. Atomic concentrations in immediate vicinity of the filament are significantly lower than expected from thermodynamical calculations and depend on the filament diameter. Addition of methane results in a decrease of cH by more than 30% near the filament and a steeper cH(r) dependence, demonstrating the accelerated consumption of H atoms by the presence of hydrocarbon species. H concentration profiles for Ta, Ir, and W filaments show a dependence on filament materials which might be taken into account when selecting filament materials for chemical vapor deposition of diamond.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Current quenching in the pseudospark

W. Hartmann, G. F. Kirkman, and M. A. Gundersen

Appl. Phys. Lett. 58, 574 (1991); http://dx.doi.org/10.1063/1.104591 (3 pages) | Cited 10 times

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A study of current quenching in the pseudospark is presented. Current quenching during the conductive phase limits peak conduction current in certain thyratron switches. The quenching phenomenon also occurs in the pseudospark. However, a remarkable feature is that current quenching is observed only below currents of ≊ 2–3 kA, near the onset of superemissive behavior, and thus in the pseudospark is not an upper limit to high current operation. A mechanism involving an instability caused by ion depletion at the plasma boundary is discussed.
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52.75.Kq Plasma switches (e.g., spark gaps)
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables

Ejection angle dependence of electrical properties of ion beam sputtered tantalum oxide films

Kengo Ishiyama and Yasunori Taga

Appl. Phys. Lett. 58, 577 (1991); http://dx.doi.org/10.1063/1.104592 (3 pages) | Cited 2 times

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Ion beam sputtering was used to deposit tantalum oxide films on silicon substrates at different positions surrounding a Ta2O5 target. dc conductance of the films shows dependence on the ejection angle of sputtered particles and primary ion energy. Capacitance‐voltage characteristics also vary by changing the primary ion energy. These variations of electrical properties are discussed by considering the effect of anisotropic ejection of the sputtered energetic particles.
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81.15.Cd Deposition by sputtering
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators

Realization of low facet density and the growth mechanism of GaAs on GaAs(110) by migration‐enhanced epitaxy

M. López, Y. Takano, K. Pak, and H. Yonezu

Appl. Phys. Lett. 58, 580 (1991); http://dx.doi.org/10.1063/1.104593 (3 pages) | Cited 8 times

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Smooth GaAs layers were successfully grown by migration‐enhanced epitaxy on exactly (110) oriented substrates. The surface of layers grown by conventional molecular beam epitaxy was completely covered with facets, whose density was higher than 106 cm−2. The facet density was reduced remarkably by three orders of magnitude using the migration‐enhanced epitaxy method. Observing the intensity oscillations of the specular spot of reflection high‐energy electron diffraction patterns, the growth mode and the migration characteristics of surface adatoms have been investigated.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

Potential use of the ruby R2 line shift for static high‐pressure calibration

Y. M. Gupta and X. A. Shen

Appl. Phys. Lett. 58, 583 (1991); http://dx.doi.org/10.1063/1.104594 (3 pages) | Cited 33 times

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Results of shock‐wave experiments to examine ruby R‐line shifts for uniaxial strain compression along the crystal a axis are summarized and compared with previous c‐axis results [P. D. Horn and Y. M. Gupta, Phys. Rev. 39, 973 (1989)]. The present results show that R1‐line shift with compression depends on both nonhydrostatic stresses and crystal orientation. Hence, pressure determination using R1‐line shifts in a nonhydrostatic environment can lead to errors. In contrast, the R2‐line shift depends only on density compression and is independent of nonhydrostatic stresses and crystal orientation. These findings suggest the use of R2‐line shifts for pressure calibration under nonhydrostatic loading conditions.
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62.50.-p High-pressure effects in solids and liquids
07.35.+k High-pressure apparatus; shock tubes; diamond anvil cells
78.47.-p Spectroscopy of solid state dynamics
78.55.Hx Other solid inorganic materials

Mass and geometry effects on the anisotropic transport in ion mixing

Gregory W. Auner, Yang‐Tse Cheng, M. H. Alkaisi, and K. R. Padmanabhan

Appl. Phys. Lett. 58, 586 (1991); http://dx.doi.org/10.1063/1.104595 (3 pages) | Cited 10 times

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Experimental investigations of the effect of target species atomic mass and system geometry on the anisotropic transport in the ion mixing of metallic systems are reported. Bilayer samples with zero heats of mixing and similar cohesive energies, but different atomic mass and geometry, such as Ta on top of Nb(Ta/Nb), Nb on top of Ta(Nb/Ta), Hf on top of Zr (Hf/Zr), and Zr on top of Hf(Zr/Hf) were irradiated by 300 keV Kr2+ at a dose of 2 × 1016 Kr2+/cm2 at 77 K. The samples were investigated using embedded markers and Rutherford backscattering spectrometry. The experimental results indicate that the anisotropic transport is dominated by a preferential displacement of the top layer species into the bottom layer. This is probably due to an anisotropy in the momentum distribution within the collision cascade. In addition, there is an enhancement of the inward displacement when the lighter species is on top indicating a small preferential recoil displacement of the lighter species over the heavier one.
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61.80.Jh Ion radiation effects
66.30.J- Diffusion of impurities
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
68.35.Fx Diffusion; interface formation

Studies of hydrogen ion beam cleaning of silicon dioxide from silicon using in situ spectroscopic ellipsometry and x‐ray photoelectron spectroscopy

Y. Z. Hu, K. A. Conrad, M. Li, J. W. Andrews, J. P. Simko, and E. A. Irene

Appl. Phys. Lett. 58, 589 (1991); http://dx.doi.org/10.1063/1.104596 (3 pages) | Cited 8 times

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The removal of a thin oxide layer from a silicon substrate without significant damage has been achieved at temperatures as low as 500 °C using a low‐energy hydrogen ion beam produced by a high‐intensity and low‐energy ion source in a high‐vacuum system. In situ spectroscopic ellipsometry was found to be a sufficiently sensitive and nondestructive method for simultaneously monitoring silicon surface cleaning and ion‐induced substrate damage. This letter reports the optimum cleaning parameters for silicon (i.e., minimum ion‐induced damage with maximum etch rate of SiO2) to be 300 eV ion beam energy, 60° beam incidence, and 500 °C substrate temperature.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
61.80.Jh Ion radiation effects
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Atomic constraint in hydrogenated ‘‘diamond‐like’’ carbon

M. A. Tamor, W. C. Vassell, and K. R. Carduner

Appl. Phys. Lett. 58, 592 (1991); http://dx.doi.org/10.1063/1.104597 (3 pages) | Cited 134 times

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Carbon bonding environments (measured by nuclear magnetic resonance spectroscopy) and compressive stress in plasma‐deposited hydrogenated diamond‐like carbon (DLC) films have been examined systematically as a function of substrate bias voltage. These results are related in terms of random network theory to show that hard DLC formed in an intermediate voltage range (100–400 V) consists of small graphitic clusters linked in a random network which is stiffened by a high density of quaternary carbon.
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61.43.Fs Glasses
61.43.-j Disordered solids
61.44.Br Quasicrystals
61.05.Qr Magnetic resonance techniques; Mössbauer spectroscopy (for structure determination only)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Disappearance of grain boundaries in sintering

R. Stephen Berry, J. Bernholc, and Peter Salamon

Appl. Phys. Lett. 58, 595 (1991); http://dx.doi.org/10.1063/1.105222 (3 pages) | Cited 5 times

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An exactly solvable model of grain boundary annealing in sinters is introduced and studied for a range of particle sizes. The model explains well the cluster fusion events observed by high‐resolution transmission electron microscopy.
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81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
61.72.Mm Grain and twin boundaries
36.40.-c Atomic and molecular clusters

Effect of high‐temperature anneal on interface states generation in stressed metal‐oxide‐semiconductor devices

M. Berger, E. Avni, and J. Shappir

Appl. Phys. Lett. 58, 598 (1991); http://dx.doi.org/10.1063/1.104598 (3 pages) | Cited 2 times

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Polycrystalline silicon gate metal‐oxide‐semiconductor transistors, fabricated with polycrystalline silicon leads, were repeatedly electrically stressed by constant‐current Fowler–Nordheim tunneling cycles. After every stress cycle the devices were annealed for various time intervals at 950 °C. Capacitance‐voltage measurements were used to detect stress‐related interface‐state generation rates and saturation values. It was found that although the stress‐generated interface states are totally annealed by the thermal treatment, their generation rates and saturation values after anneal are a strong function of the anneal time, significantly exceeding the values of the fresh devices and inversely dependent on the anneal time. From the results it is concluded that a new type of latent interface‐state sites is generated by the combination of tunneling stress and high‐temperature annealing.
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73.20.At Surface states, band structure, electron density of states
85.30.Hi Surface barrier, boundary, and point contact devices
85.30.Tv Field effect devices

Characterization and determination of the band‐gap discontinuity of the InxGa1−xAs/GaAs pseudomorphic quantum well

Y. Zou, P. Grodzinski, E. P. Menu, W. G. Jeong, P. D. Dapkus, J. J. Alwan, and J. J. Coleman

Appl. Phys. Lett. 58, 601 (1991); http://dx.doi.org/10.1063/1.104570 (3 pages) | Cited 15 times

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Single and multiple quantum well samples have been grown by atmospheric pressure metalorganic chemical vapor deposition at In compositions from 9 to 28% and layer thicknesses ranging from 15 to 140 Å, depending upon the composition. Selected samples containing three quantum wells of a given composition but with different thicknesses were characterized by x‐ray double‐crystal diffractometry, low‐temperature photoluminescence, and transmission electron microscopy (TEM). Using a simulation technique based on the dynamical theory of x‐ray diffraction in concert with TEM measurements, the In composition in the quantum well as well as the thicknesses can be directly extracted. The peak positions of the photoluminescence are used to determine the strained and unstrained energy gap and the conduction band offsets associated with InxGa1−xAs of a given composition. We have found the discontinuities to be 60% of the difference in the energy gap of GaAs and strained InxGa1−xAs.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Electrical properties of GaAs selectively grown by electron cyclotron resonance plasma‐excited molecular beam epitaxy

Norio Yamamoto, Naoto Kondo, and Yasushi Nanishi

Appl. Phys. Lett. 58, 604 (1991); http://dx.doi.org/10.1063/1.105221 (3 pages) | Cited 2 times

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Electrical properties of GaAs layers selectively grown by electron cyclotron resonance plasma‐excited molecular beam epitaxy (ECR‐MBE) have been studied. Exposing a Si3N4 mask to ECR plasma introduces Si from the mask to the selectively grown layer and increases the carrier concentration of the undoped layer. By doping Si into this selectively grown layer, carrier concentrations as high as 5×1018 cm−3 could be obtained. It was also found that the carrier concentration profile did not show any decrease at the interface between the substrate and the grown layer. These results suggest that selective area growth of a heavily doped n‐type layer makes ECR‐MBE a very promising method to form low‐resistance ohmic contacts as a regrowth process.
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73.61.Ey III-V semiconductors

Selective area deposition of boron on Si(111) induced by synchrotron radiation

R. A. Rosenberg, F. K. Perkins, D. C. Mancini, G. R. Harp, B. P. Tonner, S. Lee, and P. A. Dowben

Appl. Phys. Lett. 58, 607 (1991); http://dx.doi.org/10.1063/1.104571 (3 pages) | Cited 38 times

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We have performed the first deposition of boron on Si(111) induced by broadband synchrotron radiation (SR). Contamination‐free thin films were grown at room temperature using decaborane (B10H14) as the source gas. After deposition the films were examined using photoelectron microscopy, which showed that film growth was limited to the region illuminated by SR. The temperature of the substrate rose less than 10 K. These results indicate that gas‐phase excitations are not important and that the films are deposited by a nonthermal, photoinduced mechanism. Masked exposures demonstrate the potential of this technique for patterned deposition.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.10.Bk Growth from vapor
81.65.-b Surface treatments

Amorphous‐deposited polycrystalline silicon for contact‐hole plugs

J. M. Drynan and T. Kikkawa

Appl. Phys. Lett. 58, 610 (1991); http://dx.doi.org/10.1063/1.104572 (3 pages) | Cited 2 times

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Silicon films deposited using the low‐pressure chemical vapor deposition method at deposition temperatures between 500 and 540 °C are amorphous and exhibit better contact‐hole coverage than those deposited at higher temperatures. Phosphorus diffusion and annealing transform these low‐temperature amorphous films into polycrystalline ones with dominant (111) crystal orientations and resistivities in the range of 3×10−3 Ω cm, whereas films deposited at higher temperatures have both (111) and dominant (220) crystal orientations and resistivities in the range of 13×10−3 Ω cm.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.40.Rs Electrical and magnetic properties related to treatment conditions
68.55.-a Thin film structure and morphology

Semiconductor hot‐electron alternating current cold cathode

N. Dalacu and A. H. Kitai

Appl. Phys. Lett. 58, 613 (1991); http://dx.doi.org/10.1063/1.104573 (3 pages) | Cited 1 time

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A ZnS semiconductor thin film grown on a dielectric layer is demonstrated as a cold cathode. Hot electrons are generated in ZnS and are emitted through a thin gold layer. Electron current density is controlled by means of alternating current (ac) coupling between the rear electrode and the ZnS layer. This yields a pulsating sheet source of electrons with controlled and spatially uniform current density. A current density of ∼1 μA/cm2 with efficiency of ∼10−3 is obtained. The ability to modulate and address this device makes it attractive for flat panel displays and other applications.
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73.40.Ns Metal-nonmetal contacts
73.40.Gk Tunneling
73.30.+y Surface double layers, Schottky barriers, and work functions

Internal photoemission and energy‐band offsets in GaAs‐GaInP p‐I‐N heterojunction photodiodes

M. A. Haase, M. J. Hafich, and G. Y. Robinson

Appl. Phys. Lett. 58, 616 (1991); http://dx.doi.org/10.1063/1.104574 (3 pages) | Cited 40 times

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Internal photoemission has been observed in GaAs‐Ga0.52In0.48P p‐I‐N heterojunction photodiodes grown by gas source molecular beam epitaxy. Threshold energies associated with this photocurrent mechanism have been accurately measured. Simple analysis provides a precise determination of the energy‐band discontinuities in this heterostructure material system. The results indicate a conduction‐band discontinuity of ΔEc=108±6 meV at room temperature.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.60.Dw Photodiodes; phototransistors; photoresistors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
81.65.-b Surface treatments

Low‐rate plasma oxidation of Si in a dilute oxygen/helium plasma for low‐temperature gate quality Si/SiO2 interfaces

A. A. Bright, J. Batey, and E. Tierney

Appl. Phys. Lett. 58, 619 (1991); http://dx.doi.org/10.1063/1.104547 (3 pages) | Cited 27 times

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Low‐rate plasma oxidation of Si, involving a small oxygen concentration in a low‐power He plasma at low processing temperatures (∼350 °C), is shown capable of producing excellent interface properties, good uniformity, and low defect density. As an interfacial layer for plasma‐enhanced chemical vapor deposited (PECVD) SiO2 films, the plasma oxide is key to achieving high quality composite (plasma oxide/PECVD) oxide structures, which essentially match the electrical quality of thermal oxides. Such low‐temperature oxide films are suitable for critical device applications, such as the gate oxide in metal‐oxide‐semiconductor devices and the base passivation layer in advanced bipolar devices.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.35.Fx Diffusion; interface formation

Design parameters of a resonant infrared photoconductor with unity quantum efficiency

Jam Farhoomand and Robert E. McMurray

Appl. Phys. Lett. 58, 622 (1991); http://dx.doi.org/10.1063/1.104548 (3 pages) | Cited 3 times

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A new concept for an infrared photoconductor with enhanced characteristics, such as unity quantum efficiency, high photoconductive gain, and very low noise equivalent power is introduced. The idea revolves around establishing a relatively high finesse absorption‐cavity internal to the detector element. A theoretical analysis demonstrates this concept and provides some design guidelines. This concept offers many advantages, especially for low‐background astronomy, and may prove to be technologically simpler to implement than other concepts such as the impurity‐band‐conduction approach.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
72.40.+w Photoconduction and photovoltaic effects
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
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