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18 Feb 1991

Volume 58, Issue 7, pp. 663-780

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Third‐order nonlinear optical properties of thin films of poly(p‐phenylene benzobisthiazole) and its molecular composites with polyamides

Herman Vanherzeele, Jeffrey S. Meth, Samson A. Jenekhe, and Michael F. Roberts

Appl. Phys. Lett. 58, 663 (1991); http://dx.doi.org/10.1063/1.104561 (3 pages) | Cited 16 times

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The nonresonant third‐order nonlinear optical properties of thin films of poly(p‐phenylene benzobisthiazole) (PBZT) and PBZT/nylon 66 and PBZT/poly(trimethylhexamethylene terephthalmide) (PTMHT) molecular composites have been investigated using picosecond third‐harmonic generation at 1.9 μm. The measured χ(3)(−3ω,ω,ω,ω) for the pure PBZT was (1.37±0.27)×10−11 esu. The χ(3) of PBZT/nylon composites showed a linear dependence on composition. In contrast, the χ(3) of PBZT/PTMHT molecular composites significantly deviated from this linear dependence, showing enhanced values. No in‐plane anisotropy in any of the films was detected. The optical damage threshold of PBZT was measured to be ≳50 GW/cm2 for 30 ps pulses at 1.9 μm.
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78.66.Qn Polymers; organic compounds
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
61.41.+e Polymers, elastomers, and plastics
42.70.-a Optical materials

Demonstration of a heterostructure field‐effect laser for optoelectronic integration

G. W. Taylor, P. R. Claisse, and P. Cooke

Appl. Phys. Lett. 58, 666 (1991); http://dx.doi.org/10.1063/1.104562 (3 pages) | Cited 6 times

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A new laser structure suitable for optoelectronic integration is reported. It utilizes field effect at a heterointerface within the same structure used to build field‐effect transistors. A threshold current density of 560 A/cm2 and a differential quantum efficiency of 56% were achieved.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.30.Tv Field effect devices

Asymmetric line broadening in intracavity loss modulated quantum well distributed feedback lasers

J. O’Gorman, A. F. J. Levi, T. Tanbun‐Ek, and R. A. Logan

Appl. Phys. Lett. 58, 669 (1991); http://dx.doi.org/10.1063/1.104563 (3 pages) | Cited 2 times

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We report for the first time high‐speed (Gbit s−1), single mode, digital (on‐off) modulation of intracavity loss modulated 1.55 μm InGaAs/InP multiple quantum well distributed feedback lasers. The lasing spectrum, observed to be asymmetrically broadened under high‐speed modulation, is shown to result from large carrier density variations which accompany this switching scheme. We also show, for the first time, digitally current‐modulated lasers have broader linewidths than devices which use intracavity loss modulation.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Raman microprobe characterization of photorefractive nonlinearity in Ti:LiNbO3 channel waveguides

Uma B. Ramabadran, Howard E. Jackson, and Joseph T. Boyd

Appl. Phys. Lett. 58, 672 (1991); http://dx.doi.org/10.1063/1.104564 (3 pages) | Cited 7 times

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We report on the use of a Raman microprobe to investigate the nonlinear optical process of polarization rotation in Ti:LiNbO3 optical channel waveguides. Selection rules allow the Raman scattered signal collected in a direction orthogonal to the plane of the waveguide to provide information regarding the polarization state of the light propagating in the waveguide. From this data a threshold value of power necessary to initiate the polarization rotation is obtained and used to calculate a value of β15, an asymmetric component of the photovoltaic tensor. The value of β15 for an X‐cut, Y‐propagating channel waveguide was found to be 8×10−13 A/W and that for a rapid thermally annealed Z‐cut, Y‐propagating sample 4×10−14 A/W.
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78.20.-e Optical properties of bulk materials and thin films
78.20.Jq Electro-optical effects
78.30.Hv Other nonmetallic inorganics

Oscillation wavelength and laser structure dependence of nonlinear damping effect in semiconductor lasers

K. Uomi, T. Tsuchiya, M. Aoki, and N. Chinone

Appl. Phys. Lett. 58, 675 (1991); http://dx.doi.org/10.1063/1.104565 (3 pages) | Cited 20 times

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For the first time, the oscillation wavelength and the laser structure dependence of the K factor and of the nonlinear gain suppression coefficient ϵ in semiconductor lasers were systematically investigated. As a result, we suggest that the nonlinear gain effect can be explained by the spectral hole burning theory.
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42.55.Ah General laser theory
42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

Ferroelectric layers for the stabilization of poled polymer films

G. Knabke and H. Franke

Appl. Phys. Lett. 58, 678 (1991); http://dx.doi.org/10.1063/1.104566 (3 pages) | Cited 4 times

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A method for measuring the in situ poling and relaxation of an electro‐optic polymer lightguide is presented. The poling/relaxation of a single film is compared with the behavior of the same film in the vicinity of a ferroelectric composite sublayer. The stability of the dye orientation obtained by poling is controlled by the ferroelectric substrate. Thus the stability of dye orientation in an electro‐optic polymer may be enhanced.
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78.20.Jq Electro-optical effects
42.70.-a Optical materials
42.79.Gn Optical waveguides and couplers

Passive mode locking of a two‐section multiple quantum well laser at harmonics of the cavity round‐trip frequency

Steve Sanders, Amnon Yariv, Joel Paslaski, Jeffrey E. Ungar, and Hal A. Zarem

Appl. Phys. Lett. 58, 681 (1991); http://dx.doi.org/10.1063/1.104567 (3 pages) | Cited 14 times

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A multiple quantum well GaAs/AlGaAs laser with two electrically isolated contacts is passively mode locked in an external cavity at the first through sixth harmonics of the pulse round‐trip frequency of 1.17 GHz to produce pulses shorter than 10 ps. The repetition rate is switched between harmonics by adjusting the gain section current, and large hysteresis between the different repetition rates is observed, with up to four different repetition rates for the same gain current. The results are compared with small and large signal passive mode‐locking theories by considering modifications to the saturated gain recovery between pulses when the laser operates at different harmonics.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks

Excitonic optical nonlinearity induced by internal field screening in (211) oriented strained‐layer superlattices

I. Sela, D. E. Watkins, B. K. Laurich, D. L. Smith, S. Subbanna, and H. Kroemer

Appl. Phys. Lett. 58, 684 (1991); http://dx.doi.org/10.1063/1.104568 (3 pages) | Cited 42 times

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The nonlinear optical properties of a new class of strained‐layer superlattices (intrinsic Stark effect superlattices) have been investigated. Specifically, we have compared the nonlinear transmission of Ga1−xInxAs‐GaAs strained‐layer superlattices grown along the (211) axis to identical superlattices grown along the (100) axis, and found that the optical nonlinearity in the (211) sample is about one order of magnitude greater than in the (100) sample. A blue shift of the exciton resonance and an increase in the exciton absorption strength in the (211) sample with increasing light intensity was observed (attributed to screening of the intrinsic Stark effect fields by photogenerated carriers), resulting in the stronger optical nonlinearity. The maximum of the nonlinear absorption index, ‖α2‖, in the (211) sample was 54 cm/W (‖Im χ3‖=0.33 esu) whereas in the (100) sample the maximum of ‖α2‖ was 6.9 cm/W (‖Im χ3‖=0.042 esu). The measured carrier recovery time in both samples was 2 ns.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Switching power dependence on detuning and current in bistable diode laser amplifiers

Zeqi Pan, Hongchin Lin, and M. Dagenais

Appl. Phys. Lett. 58, 687 (1991); http://dx.doi.org/10.1063/1.104569 (3 pages) | Cited 9 times

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Measurements of the optical power required to switch on‐and‐off an optical bistable diode laser amplifier as a function of detuning and current from threshold are presented. Good quantitative agreement between the theory for a nonlinear Fabry–Perot and the experimental results are obtained. A linewidth enhancement factor of 3.1 and a value for the change of the refractive index versus carrier density of −1.8×10−20 cm3 are extracted from the measurements.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks

Electric field‐induced optical waveguide intensity modulators using GaAs/AlxGa1−xAs quantum wells

R. W. Wickman, A. L. Moretti, K. A. Stair, and T. E. Bird

Appl. Phys. Lett. 58, 690 (1991); http://dx.doi.org/10.1063/1.104545 (3 pages) | Cited 2 times

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We demonstrate a new waveguide intensity modulator that uses the field‐dependent refractive index change associated with quantum wells to control the lateral confinement of light in a slab waveguide. By operating at photon energies ∼40 meV below the zero field electron–heavy hole transition energy, we show, conclusively, that the field‐induced refractive index change is primarily due to the quantum‐confined Stark effect. Intensity modulators are demonstrated with on/off ratios better than 3:1. Devices based on this electrically controllable lateral confinement will play an important role in integrated optics.
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42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
78.20.Jq Electro-optical effects

Multichannel slab discharge for CO2 laser excitation

E. F. Yelden, H. J. J. Seguin, C. E. Capjack, and S. K. Nikumb

Appl. Phys. Lett. 58, 693 (1991); http://dx.doi.org/10.1063/1.105220 (3 pages) | Cited 20 times

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Experimental results on a unique multichannel slab‐type CO2 discharge system are presented. The interdigital discharge geometry incorporates both large‐area and multibeam laser array concepts into a single, compact package. Small signal gain and saturation intensity values indicate that this structure is well suited for use in a CO2 laser.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
52.80.Tn Other gas discharges

Optimization by numerical simulation of the focusing properties of self‐magnetically insulated ion diodes

Thomas Westermann

Appl. Phys. Lett. 58, 696 (1991); http://dx.doi.org/10.1063/1.104546 (3 pages) | Cited 2 times

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We present two‐dimensional electromagnetic computer simulation results performed in order to investigate the focusing properties of self‐magnetically insulated ion diodes. A particle‐in‐cell code self‐consistently computes the electromagnetic fields inside the anode‐cathode gap and an optimization code changes the shape of the anode in order to improve the focusing behavior. It has been shown computationally that in the case of the self‐magnetically Bθ‐insulated diode the power density can be improved by a factor of 7 by changing the anode surface.
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52.65.-y Plasma simulation
52.40.Mj Particle beam interactions in plasmas
52.59.Mv High-voltage diodes
41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams

Effect of x‐y coupling on the beam breakup instability

R. A. Bosch and R. M. Gilgenbach

Appl. Phys. Lett. 58, 699 (1991); http://dx.doi.org/10.1063/1.105219 (3 pages) | Cited 3 times

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In solenoidal beam transport systems, motions in the x and y directions are coupled by the v×B force. A two‐dimensional coupled mode description of the beam breakup (BBU) instability is presented; its dispersion relation is derived and compared with the one‐dimensional BBU dispersion relation. In the two‐dimensional description, instability growth is doubled and two additional wave modes are found in the regime of strong focusing. In the weak focusing regime, the two‐dimensional description gives the same dispersion relation as the one‐dimensional model.
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41.75.Ht Relativistic electron and positron beams
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables

Fast nanoscale modification of Ag(111) using a scanning tunneling microscope

Jürgen P. Rabe and Stefan Buchholz

Appl. Phys. Lett. 58, 702 (1991); http://dx.doi.org/10.1063/1.104520 (3 pages) | Cited 34 times

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Epitaxial Ag(111) films have been grown on mica. They exhibit flat terraces of a few 100 nm diameter, suitable for nanoscale modification with the scanning tunneling microscope (STM). Under ambient conditions, surface modifications of a few nanometers diameter were produced by raising the bias from below 1 V to a bias between 3 and 7 V for less than 50 ns. The steady‐state current could be limited to 2 pA. This means that the modification is initiated while only a few electrons pass the tunneling junction, indicating that it is not a current effect. At positive sample bias, usually holes are formed, while at negative bias hillocks occur. In the case of hole formation, the current does not change significantly on a time scale of 10 μs. When hillocks are formed, the current may rise after the application of the voltage pulse. It was limited to 4 nA by the external circuitry and remains saturated until the tip is withdrawn on a time scale of milliseconds, i.e., the characteristic for the feedback loop control. Also in this case the modification is not caused by a current effect, since the limiting current would still allow nondestructive STM imaging. It is concluded that the modifications are caused by field evaporation of sample and tip material, respectively.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
81.05.Bx Metals, semimetals, and alloys

Study on microstructure of ordered InGaAs crystals grown on (110)InP substrates by transmission electron microscopy

Osamu Ueda, Yoshiaki Nakata, and Toshio Fujii

Appl. Phys. Lett. 58, 705 (1991); http://dx.doi.org/10.1063/1.104521 (3 pages) | Cited 9 times

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CuAu‐I type ordered structures in InGaAs grown on (110)InP substrates by molecular beam epitaxy, have been studied by transmission electron microscopy. In the electron diffraction pattern from the InGaAs, superstructure spots associated with CuAu‐I type ordered structure are found. The intensity of the superstructure spots becomes stronger as the tilting angle of the substrate increases up to 5°. In high‐resolution images of the crystal, doubling in periodicity of 220 and 200 lattice fringes is found, which is associated with CuAu‐I type ordered structure. Moreover, anti‐phase boundaries are very often observed in the ordered regions, which has been suggested by Kuan et al. [Appl. Phys. Lett. 51, 51 (1987)]. It is also found that ordering is not perfect, and that ordered regions are plate‐like microdomains lying on planes slightly tilted from the (110) plane. From these results, it is suggested that atomic steps on the growth surface play an important role in the generation of ordered structures.
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68.55.-a Thin film structure and morphology
61.50.Ah Theory of crystal structure, crystal symmetry; calculations and modeling
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Observation of resonant tunneling in InSb/AlInSb double‐barrier structures

J. R. Söderström, J. Y. Yao, and T. G. Andersson

Appl. Phys. Lett. 58, 708 (1991); http://dx.doi.org/10.1063/1.104522 (3 pages) | Cited 12 times

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We report the first observation of resonant tunneling in the InSb/AlxIn1−xSb material system. Five samples with InSb quantum well thicknesses ranging from 70 to 110 Å and Al0.5In0.5Sb barrier thicknesses ranging from 22 to 36 Å were grown by molecular beam epitaxy on GaAs(100) substrates at a temperature of 420 °C. The best sample, which had 22‐Å‐thick barriers and a 110‐Å‐thick quantum well, displayed a peak‐to‐valley current ratio of 1.4(3.9) at room temperature (77 K) with a corresponding peak current density of 3.6×104 A/cm2. Transmission electron microscopy revealed threading dislocations, misfit dislocations, and microtwins in the barrier region.
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73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Sharp boron spikes in silicon grown by fast gas switching chemical vapor deposition

P. J. Roksnoer, J. W. F. M. Maes, A. T. Vink, C. J. Vriezema, and P. C. Zalm

Appl. Phys. Lett. 58, 711 (1991); http://dx.doi.org/10.1063/1.104523 (3 pages) | Cited 11 times

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Boron‐doping spikes in Si have been grown by fast gas switching chemical vapor deposition at 800 or 850 °C using Si2H6 in 0.03 or 0.1 atm H2, respectively. The B2H6 doping gas was added for 2 s in two ways, viz. during growth, or as a flush while the Si2H6 was interrupted. High‐resolution secondary‐ion mass spectrometry (HR‐SIMS) analysis has revealed the sharpest as‐measured SIMS dopant profiles reported for Si grown by deposition from the gas phase. Electrical measurements show the sheet resistivity of the B spikes to be as low as 580 Ω/☒.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.uf Ge and Si

Enhancement of luminescence in GaAs by low levels of Cu

C. E. Third, F. Weinberg, M. Thewalt, and L. Young

Appl. Phys. Lett. 58, 714 (1991); http://dx.doi.org/10.1063/1.104524 (3 pages) | Cited 6 times

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In a previous paper it was reported that GaAs, after rapid thermal annealing, exhibited bright regions adjacent to the sample surfaces in the cross‐section cathodoluminescence image. In this report it is shown that these bright bands are associated with the presence of Cu, as indicated by photoluminescence measurements. It is proposed that the Cu diffuses into GaAs during annealing, from residual Cu on the sample surface. To test this hypothesis, samples were treated to alter the residual Cu prior to annealing. Removing the Cu markedly reduced the depth of the bright bands; adding Cu markedly increased the depth, in agreement with the proposed mechanism.
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78.55.Cr III-V semiconductors
78.60.Hk Cathodoluminescence, ionoluminescence
61.72.U- Doping and impurity implantation

Photoluminescence study of critical thickness of pseudomorphic quantum wells grown on small area mesa stripes

Yao Zou, Piotr Grodzinski, Julian S. Osinski, and P. Daniel Dapkus

Appl. Phys. Lett. 58, 717 (1991); http://dx.doi.org/10.1063/1.104525 (3 pages) | Cited 3 times

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Pseudomorphic In0.18Ga0.82As single quantum wells (QWs) have been grown by metalorganic chemical vapor deposition (MOCVD) on patterned substrates with mesa sizes of 3.5 μm oriented along [110] and [110] directions. Using a post‐growth masking technique, photoluminescence (PL) has been used to characterize the optical properties of the as‐grown QWs. Our results show the increase of the critical thickness by about 50% for growth on [110] undercut mesa as compared with that on the planar substrate due to the discontinuous growth behavior and no increase of critical thickness of [110] oriented mesas due to the continuous growth behavior and outdiffusion of In from the facet wall of the groove to the mesa top.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Clear energy level shift in ultranarrow InGaAs/InP quantum well wires fabricated by reverse mesa chemical etching

M. Notomi, M. Naganuma, T. Nishida, T. Tamamura, H. Iwamura, S. Nojima, and M. Okamoto

Appl. Phys. Lett. 58, 720 (1991); http://dx.doi.org/10.1063/1.104526 (3 pages) | Cited 54 times

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We have fabricated ultranarrow InGaAs/InP buried quantum well wires by means of electron beam lithography and reverse mesa wet etching. Owing to the reverse mesa etching profile, the lateral dimension of the wires has been reduced to 10 nm. Furthermore, we investigated the optical characteristics of these wires by photoluminescence and observed, for the first time, clear dependence of luminescence wavelength upon the wire width even for wires down to 10 nm, which is well explained by the theoretical calculation. The blue‐shifted shoulder structures were also observed and they were assigned theoretically to be the second quantized level.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
81.65.-b Surface treatments

Enhancement of light‐induced degradation in hydrogenated amorphous silicon due to carbon impurities

Thomas Unold and J. David Cohen

Appl. Phys. Lett. 58, 723 (1991); http://dx.doi.org/10.1063/1.104527 (3 pages) | Cited 10 times

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The effect of carbon impurities in a‐Si:H samples at low concentrations (1 at. % to less than 0.1 at. %) has been investigated using capacitance profiling methods on samples whose carbon content was intentionally modulated spatially during growth. We have found a strong correlation between the secondary‐ion mass spectroscopy determined carbon content and the susceptibility of these samples to light‐induced metastable defect creation. No correlation was found with respect to the variation in total hydrogen content of these samples.
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71.23.-k Electronic structure of disordered solids
71.55.Ht Other nonmetals

Atomically precise superlattice potential imposed on a two‐dimensional electron gas

H. L. Stormer, L. N. Pfeiffer, K. W. Baldwin, K. W. West, and J. Spector

Appl. Phys. Lett. 58, 726 (1991); http://dx.doi.org/10.1063/1.104528 (3 pages) | Cited 60 times

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We have been able to fabricate a two‐dimensional electron gas containing an atomically precise, lateral Kronig–Penney potential of 102 Å periodicity. The structure was formed by modulation‐doped molecular beam epitaxy overgrowth on the cleaved edge of a 71 Å GaAs/31 Å AlGaAs compositional superlattice. Low‐temperature magnetotransport reveals clear quantum Hall characteristics. From the onset of the Shubnikov–de Haas oscillations at 0.25 T we deduce a lower limit of the mobility of μ≳40 000 cm2/V s at an electron density of 3.0×1011 cm−2 and infer that the carriers are crossing more than 200 GaAs/AlGaAs interfaces without losing phase coherence.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ey III-V semiconductors

NiSi formation through a semipermeable membrane of amorphous Cr(Ni)

G. A. Rozgonyi, Ju‐Hyeon Lee, D. Knoesen, D. Adams, B. Patnaik, N. Parikh, A. S. M. Salih, and P. Balducci

Appl. Phys. Lett. 58, 729 (1991); http://dx.doi.org/10.1063/1.104529 (3 pages) | Cited 10 times

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Following heat treatments of Pt encapsulated Ni80Cr20 thin films on silicon substrates at temperatures ranging from 300 to 500 °C, it has been discovered that Cr atoms segregate at the original NiCr/Si interface to form an amorphous layer, while Ni atoms diffuse into the Si to form Ni silicide. The Cr‐rich amorphous layer acts as a ‘‘semipermeable membrane’’ which selectively passes Ni to form a very uniform NiSi layer.
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73.40.Ns Metal-nonmetal contacts
81.15.Cd Deposition by sputtering
85.40.Hp Lithography, masks and pattern transfer
85.40.Ls Metallization, contacts, interconnects; device isolation

Effects of low‐dose Si implantation damage on diffusion of phosphorus and arsenic in Si

Heemyong Park and Mark E. Law

Appl. Phys. Lett. 58, 732 (1991); http://dx.doi.org/10.1063/1.104530 (3 pages) | Cited 14 times

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The effects of low‐dose Si implantation damage on diffusion of low‐concentration P and As in Si wafers are investigated. Dopants are implanted at a low dose and subsequently preannealed to remove any self‐damage. An enhanced diffusion of P is observed by directly comparing dopant profiles in damaged and undamaged regions. Monitoring effective diffusivity of P at various annealing temperatures and times reveals that the enhanced diffusion is a transient process with a time constant which is larger at lower temperature. This enhancement is larger and of longer duration the lower the annealing temperature is. In contrast to P, As diffusion in the damaged region does not show any enhancement. This implies that the defects induced by the Si implants have separate mechanisms for interaction with each type of dopant.
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66.30.J- Diffusion of impurities
61.80.Jh Ion radiation effects
61.72.uf Ge and Si

Impact ionization of Se‐related DX centers in AlGaAs

I. Izpura, E. Muñoz, F. García, E. Calleja, A. L. Powell, P. I. Rockett, C. C. Button, and J. S. Roberts

Appl. Phys. Lett. 58, 735 (1991); http://dx.doi.org/10.1063/1.104531 (3 pages) | Cited 6 times

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The ionization processes of Se‐related DX centers have been studied in AlGaAs Schottky diodes under high reverse bias conditions. A spectroscopy technique that provides directly the free‐electron concentration has been used. Besides the well known thermal and optical electron emission processes, a new mechanism, attributed to an impact ionization process of DX centers, is described, and its kinetics is analyzed.
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71.55.Eq III-V semiconductors
79.20.Kz Other electron-impact emission phenomena
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