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4 Mar 1991

Volume 58, Issue 9, pp. 879-987

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Selective amorphization of ion‐bombarded SiGe strained‐layer superlattices

M. Vos, C. Wu, I. V. Mitchell, T. E. Jackman, J.‐M. Baribeau, and J. McCaffrey

Appl. Phys. Lett. 58, 951 (1991); http://dx.doi.org/10.1063/1.104488 (3 pages) | Cited 21 times

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Si/SixGe1−x multilayers were implanted with Si ions of 540 keV at doses between 1.0×1014 and 2.5×1015 ions/cm2. Channeling spectra were taken using 3 MeV B++ ions. These measurements showed a rapid increase of the Ge minimum yield with implantation dose. The increases were paralleled by a growth of disorder peaks in those parts of the Si backscattering spectrum corresponding to the SixGe1−x layers. After 1.2×1015 Si ions/cm2 the SiGe layers were completely amorphized. Cross‐sectional transmission electron microscope pictures confirmed the selective amorphization of the SiGe layers. Annealing of an irradiated sample resulted in recrystallization of all the amorphous layers in the 450–550 °C temperature range.
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61.72.uf Ge and Si
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
64.60.My Metastable phases

Parallel and perpendicular hole transport in heterostructures with high AlAs mole‐fraction barriers

R. A. Kiehl, Hadas Shtrikman, and J. Yates

Appl. Phys. Lett. 58, 954 (1991); http://dx.doi.org/10.1063/1.104465 (3 pages) | Cited 4 times

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The potential advantages of high‐barrier quantum well structures for p‐channel field‐effect transistors are investigated in measurements of parallel and perpendicular hole transport in high AlAs mole fraction heterostructures. The hole mobility in GaAs and (In,Ga)As quantum wells confined by (Al,Ga)As barriers and current‐voltage characteristics of metal‐(Al,Ga)As/GaAs diodes are examined in structures with AlAs mole fractions as high as 0.85. Hole mobilities of nearly 5000 cm2/V s with a density of 1.0×1012 cm−2 are obtained at 77 K and reductions in perpendicular currents by several orders‐of‐magnitude are obtained at 300 and 77 K.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
85.30.Tv Field effect devices
72.80.Ey III-V and II-VI semiconductors
73.61.Ey III-V semiconductors

Electroluminescence and photoluminescence from Si1−xGex alloys

N. L. Rowell, J.‐P. Noël, D. C. Houghton, and M. Buchanan

Appl. Phys. Lett. 58, 957 (1991); http://dx.doi.org/10.1063/1.104454 (2 pages) | Cited 30 times

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Electroluminescence has been observed from Si1−xGex/Si p‐n heterostructures grown by molecular beam epitaxy and fabricated into mesa diodes. The luminescence from each sample was observed at temperatures up to 80 K with diodes forward biased at current densities up to 50 A/cm2. For x=0.18 and x=0.25, broad (∼80 meV) electroluminescence peaks were observed at 890 and 860 meV, respectively. These energies as well as the peak shapes and quantum efficiencies (∼1%) were the same as those from corresponding photoluminescence spectra.
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78.55.Cr III-V semiconductors
78.60.Fi Electroluminescence
85.60.Dw Photodiodes; phototransistors; photoresistors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Etching of polymers by oxygen plasmas: Influence of viscoelastic properties

O. Joubert, P. Paniez, J. Pelletier, and M. Pons

Appl. Phys. Lett. 58, 959 (1991); http://dx.doi.org/10.1063/1.104455 (3 pages) | Cited 10 times

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A study of novolac polymer etching in an oxygen microwave multipolar plasma with independent rf wafer biasing is reported. A step‐like etch rate variation with temperature is observed for these polymers. Experiments conducted on chemically identical novolacs with different molecular weights allow this phenomenon to be correlated with their glass transition temperatures. Etch rate variations are caused by the thermal effect of ion bombardment, emphasizing the role of viscoelastic properties in polymer plasma etching.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Possible degradation mechanism in ZnS:Mn alternating current thin‐film electroluminescent display

Yun Hi Lee, In‐Jae Chung, and Myung‐Hwan Oh

Appl. Phys. Lett. 58, 962 (1991); http://dx.doi.org/10.1063/1.104456 (3 pages) | Cited 9 times

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To study origins of alternating current thin‐film electroluminescent display (AC‐TFELD) degradation phenomena, we have fabricated two different types of AC‐TFELD with multilayered insulators. For an accelerated aging, high‐frequency voltages were applied and brightness versus operating time characteristics were measured. Surface morphology (SEM), Auger electron spectroscopy (AES) in‐depth profiles, and AES spectra were examined for the aged devices with and without Si3N4 interlayers. From the obtained results, we proposed that the formation of zinc‐oxy‐sulfides in ZnS:Mn‐insulator at the ITO side may play a significant role in the aging phenomena and degradation of brightness (B)‐operating time (T) characteristics for our devices. Therefore, we suggest that the dielectric interlayer of stable stochiometry must be inserted in ZnS:Mn‐insulator at the In2O3‐SnO2(ITO) side to improve the aging characteristics.
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78.60.Fi Electroluminescence
07.07.Hj Display and recording equipment, oscilloscopes, TV cameras, etc.

Decay times of excitons in lattice‐matched InGaAs/InP single quantum wells

I. Brener, D. Gershoni, D. Ritter, M. B. Panish, and R. A. Hamm

Appl. Phys. Lett. 58, 965 (1991); http://dx.doi.org/10.1063/1.104457 (3 pages) | Cited 4 times

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A study of the photoluminescence decay times in lattice‐matched InGaAs/InP single quantum wells grown by two different epitaxial techniques is presented. We show that these decay times can be measured directly using a nonlinear photoluminescence autocorrelation technique. A model based on the saturation of localized exciton states describes the temporal behavior and the optical nonlinearities observed very well.
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71.35.-y Excitons and related phenomena
78.55.Cr III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ey III-V semiconductors

Partial ordering and enhanced mobility in Ga0.47In0.53As grown on vicinal (110)InP

Albert Chin, T. Y. Chang, A. Ourmazd, and E. M. Monberg

Appl. Phys. Lett. 58, 968 (1991); http://dx.doi.org/10.1063/1.104458 (3 pages) | Cited 18 times

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Very high quality GaInAs/AlInAs modulation‐doped heterostructures have been obtained by molecular beam epitaxy on InP oriented 6° off (110) towards the (111) pole. The results indicate partial ordering in the epitaxial layers and also suggest reduced background acceptor concentration. In spite of the high density of interface steps, the electron mobility obtained on the vicinal (110) substrate exceeds the state‐of‐the‐art value obtained on (100) oriented substrates.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Ey III-V semiconductors
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Raman characterization of single defect layers embedded in finite superlattices

G. P. Schwartz, G. J. Gualtieri, and W. A. Sunder

Appl. Phys. Lett. 58, 971 (1991); http://dx.doi.org/10.1063/1.104459 (3 pages) | Cited 6 times

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Single defect layers embedded in finite, nominally periodic superlattices have been examined using Raman scattering. The spectrum of zone‐folded acoustic phonons exhibits defect‐associated peaks due to the broken symmetry of the lattice. The frequencies and intensities of these additional modes can be qualitatively estimated using a simple photoelastic coupling model. Shifts in the defect mode frequencies are observed when the spatial location of the defect layer is moved from the substrate to the air interface.
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78.30.Fs III-V and II-VI semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
63.20.kp Phonon-defect interactions
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Native‐oxide masked impurity‐induced layer disordering of AlxGa1−xAs quantum well heterostructures

J. M. Dallesasse, N. Holonyak, N. El‐Zein, T. A. Richard, F. A. Kish, A. R. Sugg, R. D. Burnham, and S. C. Smith

Appl. Phys. Lett. 58, 974 (1991); http://dx.doi.org/10.1063/1.104460 (3 pages) | Cited 15 times

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Data are presented showing that the native oxide that can be formed on high Al composition AlxGa1−xAs (x≳0.7) confining layers on AlyGa1−yAs‐AlzGa1−zAs (y≳z) superlattices or quantum well heterostructures serves as an effective mask against impurity diffusion (Zn or Si), and thus against impurity‐induced layer disordering. The high quality native oxide is produced by the conversion of high Al composition AlxGa1−xAs (x≳0.7) confining layers, which can be grown on a variety of heterostructures, via H2O vapor oxidation (≳400 °C) in an N2 carrier gas.
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61.72.U- Doping and impurity implantation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
66.30.J- Diffusion of impurities
81.65.-b Surface treatments

Performance of a high Tc superconducting ultralow‐loss microwave stripline filter

C. Zahopoulos, S. Sridhar, J. J. Bautista, G. Ortiz, and M. Lanagan

Appl. Phys. Lett. 58, 977 (1991); http://dx.doi.org/10.1063/1.104461 (3 pages) | Cited 7 times

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We report the successful fabrication of a five‐pole interdigital stripline filter made of the 93 K superconductor Y1Ba2Cu3Oy coated on a silver substrate, with a center frequency of 8.5 GHz and an extremely high rejection ratio of 80 dB. The lowest insertion loss measured was 0.1 dB at 12 K, with a return loss better than 16 dB, representing significant improvements over a similar Cu filter, and comparable to low Tc filters. The insertion loss appears to be limited by extrinsic factors such as tuning mismatch and joint losses, and not by the superconducting material losses.
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85.25.Qc Superconducting surface acoustic wave devices and other superconducting devices
74.25.N- Response to electromagnetic fields
74.78.-w Superconducting films and low-dimensional structures

Subpicosecond time‐resolved studies of coherent phonon oscillations in thin‐film YBa2Cu3O6+x (x<0.4)

J. M. Chwalek, C. Uher, J. F. Whitaker, G. A. Mourou, and J. A. Agostinelli

Appl. Phys. Lett. 58, 980 (1991); http://dx.doi.org/10.1063/1.104462 (3 pages) | Cited 59 times

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We report the results of the first time‐resolved observation of impulsively generated coherent optical phonon oscillations in the semiconducting cuprate compound YBa2Cu3O6+x (x<0.4). The oscillations, which were probed through time‐resolved transmissivity modulation, had a period of 237 fs at room temperature, corresponding to a Raman active mode of A1g symmetry at 142 cm−1. No oscillations were observed in the superconducting form of Y‐Ba‐Cu‐O either above or below Tc. The amplitude, frequency, and linewidth of this mode were measured over a temperature range from ∼7 K to room temperature.
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74.70.-b Superconducting materials other than cuprates
78.47.-p Spectroscopy of solid state dynamics
63.20.K- Phonon interactions
78.35.+c Brillouin and Rayleigh scattering; other light scattering

Modification of magnetic property in Mn‐Zn ferrite by MeV ion implantation

Yong‐Feng Lu, Mikio Takai, Susumu Namba, Hiroyuki Sanda, Akiyoshi Chayahara, and Mamoru Satou

Appl. Phys. Lett. 58, 983 (1991); http://dx.doi.org/10.1063/1.104463 (3 pages) | Cited 2 times

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The magnetic property of Mn‐Zn ferrite has been modified by Si+ and Au+ implantation at 3 MeV to doses of 1×1016 and 1×1017 cm−2, respectively. The magnetization of the implanted surface layer decreased to zero when the ion implantation induced vacancy number was high enough. The decrease in magnetization is found to be related to the vacancy number in the implanted layer. The surface magnetization of the implanted layer can be completely recovered by thermal annealing at 850 °C for 30 min.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
75.30.Cr Saturation moments and magnetic susceptibilities
85.40.Hp Lithography, masks and pattern transfer
61.80.Jh Ion radiation effects

Soliton generation at 10 MW level in the very high frequency band

H. Ikezi, J. S. DeGrassie, and J. Drake

Appl. Phys. Lett. 58, 986 (1991); http://dx.doi.org/10.1063/1.104464 (2 pages) | Cited 12 times

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Eletromagnetic solitions at a 10 MW level in a frequency band of several hundred megahertz are generated in a transmission line loaded by a nonlinear ceramic dielectric in the para‐ electric phase.
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07.50.-e Electrical and electronic instruments and components
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
84.40.-x Radiowave and microwave (including millimeter wave) technology
77.90.+k Other topics in dielectrics, piezoelectrics, and ferroelectrics and their properties (restricted to new topics in section 77)
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