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30 Dec 1991

Volume 59, Issue 27, pp. 3511-3660

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Optimal growth conditions for molecular‐beam epitaxy of Nd3+ doped CaF2

L. E. Bausá and A. Muñoz‐Yagüe

Appl. Phys. Lett. 59, 3511 (1991); http://dx.doi.org/10.1063/1.105665 (3 pages) | Cited 7 times

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Nd3+ incorporation in CaF2 layers grown by molecular‐beam epitaxy on CaF2 substrates is investigated by making use of the photoluminescence lines associated with Nd3+ centers involving one or several Nd3+ ions. It is shown that the substrate crystal orientation has no effect on the aggregation state of Nd3+ while the growth temperature greatly influences the formation of Nd3+ aggregate centers. An optimum growth temperature around 500 °C is determined, leading to CaF2 layers of good crystal quality in which the main emission, related to single Nd3+ centers, is optimized. The results have been obtained for Nd3+ concentrations as high as 3.6 wt % Nd and growth rates in the range of 0.2–1 μm/h.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.66.-w Optical properties of specific thin films
78.55.Hx Other solid inorganic materials
61.72.up Other materials

Effect of chlorine doping on photostructural defect states in amorphous selenium films

Suresh Chand, G. D. Sharma, R. C. Bhatheja, and Subhas Chandra

Appl. Phys. Lett. 59, 3514 (1991); http://dx.doi.org/10.1063/1.105666 (2 pages) | Cited 8 times

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The effect of chlorine doping on photostructural defect states in amorphous selenium films (∼100 μm) has been studied using the thermally stimulated discharge current technique. Chlorine doping in amorphous selenium results in the shift of deep photostructural defect states C+3 and C−1 to relatively shallower levels, i.e., from 1.6 and 1.7 eV in pure films to 1.4 and 1.5 eV in chlorine‐doped films for electrons and holes, respectively. These effects have been explained in terms of the enhancement in the conductivity of amorphous selenium and increase in the mobility of electrons and holes on chlorine doping.
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73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.50.Pz Photoconduction and photovoltaic effects
71.55.Ht Other nonmetals

Real time diagnostics of detonation products from lead azide using coherent anti‐Stokes Raman scattering

F. Grisch, M. Péalat, P. Bouchardy, J. P. Taran, I. Bar, D. Heflinger, and S. Rosenwaks

Appl. Phys. Lett. 59, 3516 (1991); http://dx.doi.org/10.1063/1.105667 (3 pages) | Cited 10 times

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We report on the first example that applies coherent anti‐Stokes Raman scattering (CARS) to real time diagnostics of detonation products from a solid explosive. The supersonically expanding gaseous products, from the detonation of either lead azide pellets or powders, are studied, using broadband CARS. The density, and the rotational and vibrational temperatures of ground electronic state N2 molecules, N2(X), are monitored as a function of time at a fixed distance, 3.3 cm, from the azide surface. The rotational temperature is low, around 200–300 K, while the vibrational temperature is around 2000 K for delays of 8–12 μs, following the initiation of detonation. The density of N2(X), during this time interval, increases from ∼1×1017 to 1×1018 cm−3.
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42.55.Ks Chemical lasers
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
47.40.-x Compressible flows; shock waves

LaMgAl11O19:Nd microchip laser

N. Mermilliod, B. François, and Ch. Wyon

Appl. Phys. Lett. 59, 3519 (1991); http://dx.doi.org/10.1063/1.105668 (2 pages) | Cited 3 times

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A LMA (LaMgAl11O19) microchip laser close coupled to the fiber output of a laser diode has been tested. For a 1‐mm‐thick cavity and a 6×1020 cm−3 Nd concentration, an output power of 35 mW has been obtained, leading to an optical efficiency of 12%. The laser proved to be very stable with an intrinsic noise of 0.6% and an output power variation of only 5% for a 15 °C temperature change of the pump laser diode. Even near threshold two longitudinal modes were observed. The half divergence of this microchip laser was found to be 5±1 mrad.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.-v Laser optical systems: design and operation
42.82.-m Integrated optics

Gain‐current calculations for bulk GaInP lasers including many‐body effects

P. Rees, H. D. Summers, and P. Blood

Appl. Phys. Lett. 59, 3521 (1991); http://dx.doi.org/10.1063/1.105669 (3 pages) | Cited 6 times

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The gain‐current characteristics of undoped GaInP (660‐nm) bulk lasers have been calculated over a range of temperatures. The calculations use parabolic bands with strict k selection and include band‐gap narrowing and lifetime broadening due to carrier‐carrier interactions at high densities. The broadening lifetime τ has been implemented as a constant value of 10−13 s and as a carrier‐dependent value proportional to n−1/3. Using τ=10−13 s, our calculations for GaInP at room temperature give a value for the differential gain β of 0.026 cm−1 (A cm−2 μm−1)−1 and a value for the transparency current J0 of 4.4 kA cm−2 μm−1. These are in close agreement with experimental results. Results for GaAs at room temperature are also given.
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42.55.Px Semiconductor lasers; laser diodes

High‐power quantum‐well modulators exploiting resonant tunneling

Robert A. Morgan, Leo M. F. Chirovsky, Marlin W. Focht, and Ronald E. Leibenguth

Appl. Phys. Lett. 59, 3524 (1991); http://dx.doi.org/10.1063/1.106395 (3 pages) | Cited 3 times

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We propose and demonstrate novel surface‐normal multiple‐quantum‐well reflection modulators which are operable at high intensities while maintaining high contrast (greater than 10) by exploiting resonant tunneling between adjacent wells. At the resonant tunneling field, the lifetime of the excited (highly absorbing) state is dramatically shortened, thus minimizing carrier‐density‐dependent saturation effects. Moreover, we show that even in a Fabry–Perot cavity, device deterioration due to saturation is greatly reduced.
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42.79.Hp Optical processors, correlators, and modulators
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
73.40.Gk Tunneling
79.60.Dp Adsorbed layers and thin films
79.70.+q Field emission, ionization, evaporation, and desorption

Stability of harmonically driven mode‐locked semiconductor lasers

N. Onodera, Z. Ahmed, R. S. Tucker, and A. J. Lowery

Appl. Phys. Lett. 59, 3527 (1991); http://dx.doi.org/10.1063/1.105670 (3 pages) | Cited 2 times

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Previous reports of harmonically driven mode‐locked semiconductor lasers have indicated that the intensity correlation between adjacent pulses has a contrast ratio of two, rather than three as expected for mode‐locked pulses. We show that this reduced contrast ratio is a result of pulse instabilities in harmonically driven mode‐locked lasers. By setting the rf drive frequency to the stable operating condition, stable pulses with a contrast ratio of three have been obtained.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.55.Rz Doped-insulator lasers and other solid state lasers

Monitoring material grain size by laser‐generated ultrasound

A. Aharoni, M. Tur, and K. M. Jassby

Appl. Phys. Lett. 59, 3530 (1991); http://dx.doi.org/10.1063/1.105671 (3 pages) | Cited 3 times

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See Also: Erratum

Show Abstract
A noncontact, nondestructive, laser‐based method for remote monitoring of material grain size is described. A surface acoustic wave surge, generated in the material under test by a short, high‐power laser pulse, is detected optically. The leading‐edge rise time of the acoustic signal is found to relate to the material grain size through frequency‐dependent scattering. In assuming a Rayleigh scattering model, a good correlation with metallurgical measurements is obtained in steel specimens.
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81.70.-q Methods of materials testing and analysis
62.65.+k Acoustical properties of solids
43.38.+n Transduction; acoustical devices for the generation and reproduction of sound
61.72.Mm Grain and twin boundaries

Simulations of layer‐by‐layer sputtering during epitaxy

E. Chason, P. Bedrossian, J. E. Houston, J. Y. Tsao, B. W. Dodson, and S. T. Picraux

Appl. Phys. Lett. 59, 3533 (1991); http://dx.doi.org/10.1063/1.105648 (3 pages) | Cited 7 times

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We have performed computer simulations of simultaneous and sequential ion bombardment and epitaxial growth. In agreement with recent reflection high‐energy electron diffraction (RHEED) measurements on Si, we observe ion‐induced RHEED oscillations, a cancellation of RHEED oscillations during simultaneous equal‐rate ion bombardment and growth, and a reversal of growth‐induced roughening by subsequent ion bombardment. Comparison between simulations and measurements indicate that a model of the ion/surface interaction characterized by the creation of mobile vacancies with minimal preferential sputtering is sufficient to simulate all the RHEED measurements.
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68.55.-a Thin film structure and morphology
61.80.Jh Ion radiation effects

Limits of imaging resolution for atomic force microscopy of molecules

T. P. Weihs, Z. Nawaz, S. P. Jarvis, and J. B. Pethica

Appl. Phys. Lett. 59, 3536 (1991); http://dx.doi.org/10.1063/1.105649 (3 pages) | Cited 47 times

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The imaging resolution of an atomic force microscope operating in contact with a Langmuir–Blodgett (LB) film is predicted as a function of applied force, tip radius, adhesive force, and tip and film properties. The elastic modulus and the hardness of the LB film were measured using a nanoindenter and the imaging resolution is predicted using both a simple Hertzian elastic analysis and one that includes adhesive forces between the tip and the sample. For a small applied force (<1 nN) the resolution improves sharply as the tip radius and the adhesive force decrease. The onset of inelastic deformation, however, limits the resolution of the sharpest tips.
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62.20.D- Elasticity
62.20.F- Deformation and plasticity
68.60.Bs Mechanical and acoustical properties

Surface‐micromachined PbTiO3 pyroelectric detectors

D. L. Polla, Chian‐ping Ye, and Takashi Tamagawa

Appl. Phys. Lett. 59, 3539 (1991); http://dx.doi.org/10.1063/1.105650 (3 pages) | Cited 54 times

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Lead titanate (PbTiO3) thin‐film pyroelectric infrared detectors have been fabricated on polycrystalline silicon micromechanical membranes. Pyroelectric PbTiO3 thin films of thickness ranging from 0.2 to 0.6 μm were prepared by sol‐gel spin casting techniques and deposited on 1.0‐μm‐thick polycrystalline silicon membranes suspended 1.0 μm above the surface of a silicon wafer. This composite structure offers high sensitivity and low thermal mass. The measured pyroelectric coefficient for 0.36‐μm‐thick PbTiO3 films is 90 nC/cm2 K. The measured blackbody voltage responsivity for a pyroelectric element with an active area of 7×10−4 cm2 at 297 K and a chopping frequency of 50 Hz is 4.2×104 V/W. The measured normalized detectivity D∗ at 297 K and 50 Hz is 1.0×109 cm Hz1/2/W.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
81.20.-n Methods of materials synthesis and materials processing
77.55.-g Dielectric thin films

Ferroelectric PbZr0.2Ti0.8O3 thin films on epitaxial Y‐Ba‐Cu‐O

R. Ramesh, A. Inam, W. K. Chan, F. Tillerot, B. Wilkens, C. C. Chang, T. Sands, J. M. Tarascon, and V. G. Keramidas

Appl. Phys. Lett. 59, 3542 (1991); http://dx.doi.org/10.1063/1.105651 (3 pages) | Cited 62 times

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We have fabricated epitaxial ferroelectric PbZr0.2Ti0.8O3/YBa2Cu3O7−x heterostructures on single crystalline [001] LaAlO3. Only the (00l) peaks of the PbZr0.2Ti0.8O3 (PZT) film are observed, indicating that the epitaxial, c‐axis oriented YBCO film is a good structural template for the heteroepitaxial growth of PZT films, in addition to being a metallic bottom electrode. A saturation polarization and remanence as high as 38 and 26.5 μC/cm2 (at 7.5 V, 0.5 kHz), respectively, have been achieved. The coercive field is about 100 kV/cm.
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68.55.-a Thin film structure and morphology
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity

The preparation of Ni‐P ultrafine amorphous alloy particles by chemical reduction

Jianyi Shen, Zheng Hu, Lifeng Zhang, Zhiyu Li, and Yi Chen

Appl. Phys. Lett. 59, 3545 (1991); http://dx.doi.org/10.1063/1.105652 (2 pages) | Cited 12 times

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Ni‐P ultrafine amorphous alloy particles have been prepared by reacting nickel chloride and sodium hypophosphite in an aqueous solution. X‐ray diffraction revealed the amorphous structure of the particles and transmission electron microscopy showed that the particles are spherical, with an average diameter of about 150 nm. X‐ray photoelectron spectroscopy confirmed that all nickel and phosphorus atoms are in the elementary state on the surface of the particles, which implied the alloying state of the particles. The dynamic process of the reaction has been studied. It is found that the reaction ended within 65 min at a pH value of 10 and 351 K when the sodium hypophosphite was exhausted, and the unreacted solid residue Ni(OH)2 should be washed out with ammonia solution to obtain ‘‘pure’’ Ni‐P ultrafine amorphous alloy particles.
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81.05.Rm Porous materials; granular materials
81.20.-n Methods of materials synthesis and materials processing

Structural and optical properties of sol‐gel‐processed BaTiO3 ferroelectric thin films

M. N. Kamalasanan, Subhas Chandra, P. C. Joshi, and Abhai Mansingh

Appl. Phys. Lett. 59, 3547 (1991); http://dx.doi.org/10.1063/1.105653 (3 pages) | Cited 71 times

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BaTiO3 thin films having a perovskite structure were deposited onto stainless steel and fused quartz substrates by sol‐gel processing. Crystalline, transparent, and crack‐free films of 5000 Å thickness were fabricated by spinning and post‐deposition annealing at a temperature of 600 °C. Ferroelectric properties were confirmed by P‐E hysteresis loops. The dielectric constant and optical transmission were also measured.
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77.55.-g Dielectric thin films
77.80.Dj Domain structure; hysteresis
81.20.-n Methods of materials synthesis and materials processing

In situ temperature measurement of α‐mercuric iodide by reflection spectroscopy

D. Nason and A. Burger

Appl. Phys. Lett. 59, 3550 (1991); http://dx.doi.org/10.1063/1.105629 (3 pages)

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Crystal face temperatures of single crystals of α‐HgI2 growing in transparent ampules by physical vapor transport have been measured, in situ, by a novel, noncontact method which may be called reflectance spectroscopy thermometry. The method is based on the temperature dependence of the energy of the free‐exciton peak as detected with a low‐energy reflected beam. As presently configured, the accuracy is ±1.5 °C for a slowly varying surface temperature. The method has potential for noncontact temperature measurement in some systems for which pyrometry is unsatisfactory.
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07.20.Dt Thermometers
81.10.Bk Growth from vapor
71.35.-y Excitons and related phenomena

Image‐based models of porous media: Application to Vycor glass and carbonate rocks

P. Anthony Crossley, Lawrence M. Schwartz, and Jayanth R. Banavar

Appl. Phys. Lett. 59, 3553 (1991); http://dx.doi.org/10.1063/1.105630 (3 pages) | Cited 27 times

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We develop a new class of three‐dimensional geometrical models of porous media based on the smoothing of random white‐noise images. With the appropriate choice of smoothing parameters, models of this kind are shown to provide reasonable representations of Vycor glass and crystalline dolomites. Transport and structural properties are found to be in accord with experimental data.
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47.56.+r Flows through porous media
81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations
91.65.-n Mineralogy and petrology

Effects of crystallite size in PbTiO3 thin films

M. de Keijser, G. J. M. Dormans, P. J. van Veldhoven, and D. M. de Leeuw

Appl. Phys. Lett. 59, 3556 (1991); http://dx.doi.org/10.1063/1.105631 (3 pages) | Cited 44 times

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The lattice constants of tetragonal PbTiO3 grown by organometallic chemical vapor deposition, vary with average crystallite size in the thin film as determined from line broadening in x‐ray diffraction patterns. The a‐ and c‐lattice constants become equal when the average crystallite size decreases to below ∼5 nm. These data agree with the change in lattice constants as a function of average crystallite size found recently for submicron PbTiO3 powder.  
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68.55.-a Thin film structure and morphology
77.55.-g Dielectric thin films
61.05.cf X-ray scattering (including small-angle scattering)
61.05.cj X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.
77.80.-e Ferroelectricity and antiferroelectricity

Short‐time diffusion of zinc in silicon for the study of intrinsic point defects

H. Bracht, N. A. Stolwijk, H. Mehrer, and I. Yonenaga

Appl. Phys. Lett. 59, 3559 (1991); http://dx.doi.org/10.1063/1.106393 (3 pages) | Cited 7 times

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An experimental procedure has been developed which permits accurate short‐time diffusion anneals for diffusion periods as short as a few seconds. This method is applicable to diffusors which are volatile at the diffusion temperature. It will be illustrated for zinc diffusion into silicon which mainly takes place via the kick‐out mechanism. Previous long‐time diffusion studies have yielded the product CeqIDI of equilibrium concentration and diffusivity of Si self‐interstitials(I) involved in the interstitial‐substitutional exchange of Zn. The present short‐time diffusion method enables us to determine CeqI and DI separately by comparing measured spreading‐resistance profiles with computer simulations based on the kick‐out model.
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61.72.-y Defects and impurities in crystals; microstructure
66.30.-h Diffusion in solids

Internal piezoelectric fields in GaInSb/InAs strained‐layer superlattices probed by optically induced microwave radiation

L. Xu, X. ‐C. Zhang, D. H. Auston, and W. I. Wang

Appl. Phys. Lett. 59, 3562 (1991); http://dx.doi.org/10.1063/1.105632 (3 pages) | Cited 6 times

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Using a newly developed femtosecond electro‐optic technique, a built‐in electric field near a semiconductor surface can be measured by a contactless approach. We have observed for the first time equal strength but opposite direction of strain‐induced piezoelectric fields from lattice‐mismatched A face and B face of GaInSb/InAs strained‐layer superlattices by optically induced microwave radiation.
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78.47.-p Spectroscopy of solid state dynamics
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.50.Pz Photoconduction and photovoltaic effects

Manipulation of nucleation sites in solid‐state Si crystallization

Hideya Kumomi, Takao Yonehara, and Takashi Noma

Appl. Phys. Lett. 59, 3565 (1991); http://dx.doi.org/10.1063/1.105633 (3 pages) | Cited 18 times

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Single grains of Si crystal are manipulated, for the first time, in solid‐state crystallization of amorphous Si films. The artificial nucleation sites are introduced by employing the self‐ion implantation. The nucleation and growth, during the subsequent thermal annealing strongly depends on the ion dose and energy. Preferential growth of the single nucleus takes place exclusively at each site and continues to propagate over them. Consequently, the location of grains is controlled, and the size distribution is remarkably shrunken in contrast to the films crystallized by random nucleation.
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81.15.Np Solid phase epitaxy; growth from solid phases
61.80.Jh Ion radiation effects
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)

Stress‐free GaAs grown on Si using a stress balance approach

A. Freundlich, J. C. Grenet, G. Neu, and G. Stobl

Appl. Phys. Lett. 59, 3568 (1991); http://dx.doi.org/10.1063/1.105634 (3 pages) | Cited 2 times

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A novel technique, based on a stress balance principle, is proposed to control residual stress magnitude in GaAs layers grown on Si substrates. It is demonstrated that, using a suitable GaAs1−xPx buffer layer, room (300 K) or low (2 K) temperature stress‐free GaAs can be grown on Si (100).
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.55.-a Thin film structure and morphology
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances

Thermal stability of dopant‐hydrogen pairs in GaAs

S. J. Pearton, C. R. Abernathy, and J. Lopata

Appl. Phys. Lett. 59, 3571 (1991); http://dx.doi.org/10.1063/1.105635 (3 pages) | Cited 45 times

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The thermal stability of dopant‐hydrogen complexes in hydrogenated n‐ and p‐type GaAs(1–2×1017 cm−3) has been determined by examining their reactivation kinetics in reverse‐biased Schottky diodes. The reactivation process is first‐order for all of the dopants, with thermal dissociation energies (ED) of 1.45±0.10 eV for SiAs acceptors, 1.25±0.05 eV for SiGa donors, 1.20±0.10 eV for SnGa donors, 1.25±0.10 eV for Zn acceptors, 1.35±0.05 eV for CAs acceptors, and 1.15±0.10 eV for Be acceptors. The dissociation frequencies (ν) are thermally activated of the form νD = ν0E−ED/kT, with the ν0 values in the range 1–5×1013 s−1. The results are consistent with much of the H being present as H+ in p‐type material, and H− in n‐type material.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.U- Doping and impurity implantation
66.30.J- Diffusion of impurities
72.80.Ey III-V and II-VI semiconductors

Heteroepitaxial growth of Ge on (100) Si by ultrahigh vacuum, chemical vapor deposition

Brian Cunningham, Jack O. Chu, and Shah Akbar

Appl. Phys. Lett. 59, 3574 (1991); http://dx.doi.org/10.1063/1.105636 (3 pages) | Cited 48 times

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The heteroepitaxial growth of pure Ge films on (100) Si by an ultrahigh vacuum, chemical vapor deposition technique is reported for the first time. The growth mode is found to be critically dependent on the substrate temperature during deposition. Two temperature regimes for growth are observed. Between 300 and 375 °C, growth occurs in a two‐dimensional, layer‐by‐layer mode, with an activation energy of 1.46 eV. Above 375 °C, island formation is observed. In the low‐temperature regime the growth rate is controlled by a surface decomposition reaction, whereas in the high‐temperature regime the growth rate is controlled by diffusion and adsorption from the gas phase.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Initial stage of InAs on GaAs grown by molecular‐beam epitaxy studied with low‐energy ion scattering

Minoru Kubo and Tadashi Narusawa

Appl. Phys. Lett. 59, 3577 (1991); http://dx.doi.org/10.1063/1.105637 (3 pages) | Cited 10 times

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We have applied low‐energy ion scattering to study the initial stage of InAs epilayer growth on GaAs by molecular‐beam epitaxy. We have first observed a characteristic variation of the scattered He intensity with respect to the incident angles of primary He+ ions to the substrate surface. Then we have found a transition stage from the strained structure to the relaxed structure for the 4–15 monolayer thick InAs layer grown on GaAs substrate. Employing the method of surface shadowing for analysis of surface atomic steps, we have been able to observe the surface steps formation due to the island growth. We have discussed the correlation between the transition of growth process and the surface flatness from the standpoint of surface morphology.
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68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.37.Vj Field emission and field-ion microscopy

Fabrication of GaAs fine stripe structures by selective metalorganic chemical vapor deposition using diethylgalliumchloride

Ko‐ichi Yamaguchi and Kotaro Okamoto

Appl. Phys. Lett. 59, 3580 (1991); http://dx.doi.org/10.1063/1.105638 (3 pages) | Cited 7 times

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Selective GaAs fine stripe structures, aligned along 〈011〉 direction, were grown by atmospheric‐pressure metalorganic chemical vapor deposition using diethylgalliumchloride. The width of the (100) top surface of the triangle‐shaped selective epilayers could be changed from 0 to 25 nm by controlling the growth temperature, and was independent of the growth time. This phenomena can be explained by reevaporation enhancement effect of reactant species containing chloride and two‐dimensional nucleation.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.40.Hp Lithography, masks and pattern transfer
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