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9 Sep 1991

Volume 59, Issue 11, pp. 1269-1388

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Novel etching technique for a buried heterostructure GaInAs/AlGaInAs quantum‐well laser diode

A. Kasukawa, R. Bhat, C. Caneau, C. E. Zah, M. A. Koza, and T. P. Lee

Appl. Phys. Lett. 59, 1269 (1991); http://dx.doi.org/10.1063/1.105471 (3 pages) | Cited 2 times

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A novel etching technique for the 1.5‐μm GaInAs/AlGaInAs buried heterostructure quantum‐well laser diode is developed. Tartaric acid is used for the etching of GaInAs and AlGaInAs layers for the first time. Using a three‐step material‐selective etching, a 3‐μm‐high mesa with about 1.5‐μm‐wide active layer and 3‐μm‐wide contact layer can be achieved with good reproducibility. Nearly flat surfaces were obtained after a two‐step organometallic chemical vapor deposition growth. A low threshold current of 11 mA was obtained for a 570‐μm‐long cavity device.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
81.65.-b Surface treatments

Blue‐green laser diodes

M. A. Haase, J. Qiu, J. M. DePuydt, and H. Cheng

Appl. Phys. Lett. 59, 1272 (1991); http://dx.doi.org/10.1063/1.105472 (3 pages) | Cited 794 times

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The first laser diodes fabricated from wide‐band‐gap II‐VI semiconductors are demonstrated. These devices emit coherent light at a wavelength of 490 nm from a ZnSe‐based single‐quantum‐well structure under pulsed current injection at 77 K. This is the shortest wavelength ever generated by a semiconductor laser diode.
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42.55.Px Semiconductor lasers; laser diodes
85.30.Kk Junction diodes
85.60.Jb Light-emitting devices
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Timing jitter and pulse energy fluctuations in a passively mode‐locked two‐section quantum‐well laser coupled to an external cavity

Steve Sanders, Thomas Schrans, Amnon Yariv, Joel Paslaski, Jeffrey E. Ungar, and Hal A. Zarem

Appl. Phys. Lett. 59, 1275 (1991); http://dx.doi.org/10.1063/1.105473 (3 pages) | Cited 6 times

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Stability of pulse energy and timing in a passively mode‐locked two‐section quantum‐well laser is measured. Spectral analysis of the 546‐MHz pulse train reveals rms timing jitter of 5.5 ps above 50 Hz and rms pulse energy fluctuations of <0.52% above 200 Hz.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

Polarization rotation in asymmetric periodic loaded rib waveguides

Y. Shani, R. Alferness, T. Koch, U. Koren, M. Oron, B. I. Miller, and M. G. Young

Appl. Phys. Lett. 59, 1278 (1991); http://dx.doi.org/10.1063/1.105474 (3 pages) | Cited 33 times

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A new mechanism for polarization rotation in rib waveguides is suggested and demonstrated in InP waveguides. The polarization rotation is achieved by loading a rib waveguide in a periodic asymmetric way. Complete TE↔TM conversion, with only 2–3 dB excess loss, is obtained in a 3.7‐mm‐long InP loaded waveguide. Strong polarization rotation (80%), in shorter devices (0.3 mm long), is also demonstrated.
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42.79.Gn Optical waveguides and couplers
78.20.Jq Electro-optical effects

Area scaling in slab rf‐excited carbon monoxide lasers

H. Zhao, H. J. Baker, and D. R. Hall

Appl. Phys. Lett. 59, 1281 (1991); http://dx.doi.org/10.1063/1.105475 (3 pages) | Cited 16 times

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A large area (slab) waveguide carbon monoxide laser, excited by a transverse radio frequency discharge and cooled by diffusion, has been demonstrated at electrode temperatures down to −30 °C. A maximum laser power of 120 W has been achieved from a sealed 386×2 mm discharge at an extraction efficiency of 17%. Discharge area scaling factors of 15.5 kW m−2 have been observed and cw power extraction exceeding 50 W using tap water cooling has been achieved.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Generation of an extremely short single mode pulse (∼2 ps) by fiber compression of a gain‐switched pulse from a 1.3 μm distributed‐feedback laser diode

Hai‐Feng Liu, Yoh Ogawa, and Saeko Oshiba

Appl. Phys. Lett. 59, 1284 (1991); http://dx.doi.org/10.1063/1.105476 (3 pages) | Cited 19 times

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A train of 2 ps pulses, which is believed to be the shortest single mode pulses ever reported from semiconductor lasers, is produced by compressing the chirped pulses generated from a gain switched 1.3 μm distributed feedback laser diode with a dispersive fiber. An analytic model for the pulse compression in fiber is presented, which shows fairly good agreement with the experiment. The analytical results derived from the model can be advantageously used in the design of the fiber compressor for semiconductor lasers.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.81.Dp Propagation, scattering, and losses; solitons

Efficient Cr,Nd:Gd3Sc2Ga3O12 laser at 1.06 μm pumped by visible GaInP/AlGaInP laser diodes

Richard Scheps

Appl. Phys. Lett. 59, 1287 (1991); http://dx.doi.org/10.1063/1.105477 (3 pages) | Cited 3 times

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The 1.06 μm Nd transition in co‐doped Cr,Nd:Gd3Sc2Ga3O12 (Cr,Nd:GSGG) is obtained by diode pumping Cr3+ at 670 nm and is shown to produce efficient, low‐threshold laser operation. Both cw and long‐pulse diode pumping were demonstrated, with pump power levels as high as 300 mW cw and 1 W pulsed. The lowest threshold power measured was 938 μW, and the highest output power obtained was 43 mW cw and 173 mW pulsed. The best slope efficiency obtained was 42.1%, 78% of the theoretical maximum. Loss measurements indicate a value of 0.4% cm−1.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems

Laser action in a KrF‐laser‐pumped Ta vapor

H. Yoshida, H. Ninomiya, and N. Takashima

Appl. Phys. Lett. 59, 1290 (1991); http://dx.doi.org/10.1063/1.105478 (3 pages) | Cited 1 time

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Ta vapor is generated from a Ta metal plate by irradiation of a pulsed YAG laser of a 2 J energy, and the Ta atoms are optically pumped by a KrF laser of 10 mJ energy. Ta laser oscillation has been obtained on five lines in the ultraviolet region; 292.5 nm (6F01/2−4P3/2), 322.7 nm (6F03/2−4P5/2), 328.1 nm (6F03/2−6D1/2), 330.4 nm (6F03/2−6D3/2), and 351.4 nm (6F01/2−2P1/2). The gains/cm on these laser lines are 0.35, 0.24, 0.09, 0.09, and 0.20, respectively. A maximum output power of 48 W has been obtained at 2.5 Torr of He buffer gas pressure.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Low threshold pulsed and continuous‐wave laser action in optically pumped (Zn,Cd)Se/ZnSe multiple quantum well lasers in the blue‐green

H. Jeon, J. Ding, A. V. Nurmikko, H. Luo, N. Samarth, and J. Furdyna

Appl. Phys. Lett. 59, 1293 (1991); http://dx.doi.org/10.1063/1.105479 (3 pages) | Cited 35 times

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Laser action in the blue‐green at room temperature has been achieved in pulsed optically pumped (Zn,Cd)Se/ZnSe multiple quantum well structures at threshold intensities Ith≊30 kW/cm2. Continuous‐wave operation in a II‐VI semiconductor laser has also been demonstrated for the first time, here above 100 K. The role of excitons is found to be of importance in defining the lasing mechanism up to room temperature in these quasi‐two‐dimensional wide‐gap heterostructures.
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42.55.Px Semiconductor lasers; laser diodes

A novel quantum‐well optoelectronic switching device with stimulated emission

S. S. Ou

Appl. Phys. Lett. 59, 1296 (1991); http://dx.doi.org/10.1063/1.106377 (3 pages) | Cited 1 time

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A novel GaAs/GaAlAs quantum well optoelectronic switching device which exhibits an s‐type negative differential resistance at room temperature and emits a high performance stimulated emission was demonstrated. The device structure is similar to the conventional separate confinement heterojunction quantum‐well laser and thus can be easily integrated with the optoelectronic integrated circuits. The devices can be switched optically and/or electrically. Threshold current densities of 1.2 kA/cm2, differential quantum efficiencies as high as 67% (0.5 W/A slope efficiency per facet) and output power in excess of 50 mW per facet were obtained. To date, this is one of the best overall performances in terms of output power, differential quantum efficiency and threshold current density for the optoelectronic switching devices exhibiting stimulated emission capability.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.55.Px Semiconductor lasers; laser diodes
85.60.-q Optoelectronic devices
85.30.De Semiconductor-device characterization, design, and modeling

Wafer temperature measurements and end‐point detection during plasma etching by thermal imaging

V. Patel, M. Patel, S. Ayyagari, W. F. Kosonocky, D. Misra, and B. Singh

Appl. Phys. Lett. 59, 1299 (1991); http://dx.doi.org/10.1063/1.105480 (3 pages) | Cited 3 times

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Thermal imaging by an infrared television camera has been successfully employed as an in situ method for end‐point detection during plasma etching of polycrystalline silicon layers on a SiO2/Si substrate. In addition, it is also shown that thermal imaging can be used for remote sensing of etch rate, heat of reaction, wafer temperature, and for measuring thermal time constants during plasma etching. From these measurements, the heat‐transfer coefficient of the thermal contact between the silicon wafer and the water‐cooled electrode can be determined.
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07.68.+m Photography, photographic instruments; xerography
81.65.-b Surface treatments

Direct imaging of the fragments produced during excimer laser ablation of YBa2Cu3O7−δ

A. Gupta, B. Braren, K. G. Casey, B. W. Hussey, and Roger Kelly

Appl. Phys. Lett. 59, 1302 (1991); http://dx.doi.org/10.1063/1.105481 (3 pages) | Cited 64 times

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The evolution dynamics of the fragments produced during KrF excimer laser (248 nm, 25 ns) ablation of YBa2Cu3O7−δ has been observed by ultrafast photography using a synchronized dye laser beam (∼1 ns) to probe above the target surface. The images show that fragment removal is initiated near the beginning of the laser pulse (≳10 ns), continues for a maximum of a few hundred nanoseconds, and has an expansion front velocity suggesting a target temperature varying from about 1500 to 4000 K or greater. The shock wave formed due to interaction of the ablated fragments with background oxygen gas has also been photographed, and its temporal evolution as a function of oxygen pressure has been shown to agree better with a planar than spherical model. The overall picture is that of an ablation process showing pronounced but understandable gas‐dynamic effects.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
07.68.+m Photography, photographic instruments; xerography
74.70.-b Superconducting materials other than cuprates

Study of diffusion and cluster formation of copper deposition on polyimide by optical second‐harmonic generation

J. Y. Zhang, Y. R. Shen, D. S. Soane, and S. C. Freilich Co. Inc.

Appl. Phys. Lett. 59, 1305 (1991); http://dx.doi.org/10.1063/1.105482 (3 pages) | Cited 8 times

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Optical second‐harmonic generation is shown to be an effective means for in situ monitoring of two competing dynamic processes of Cu deposited on polyimide aggregation by surface diffusion and implantation by diffusion into the bulk. It is also explicitly demonstrated that a thin layer of Ti is able to completely block Cu diffusion into polyimide and promote the metal/polyimide.
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68.35.Fx Diffusion; interface formation
66.30.Ny Chemical interdiffusion; diffusion barriers
82.35.-x Polymers: properties; reactions; polymerization
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Effect of applied mechanical stress on the electromigration failure times of aluminum interconnects

H. Kahn and C. V. Thompson

Appl. Phys. Lett. 59, 1308 (1991); http://dx.doi.org/10.1063/1.105483 (3 pages) | Cited 6 times

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Accelerated lifetime electromigration tests were performed on pure aluminum interconnect lines which were subjected to an applied mechanical bending stress. The median time to open failure (MTTF) was found to decrease with increasing applied tensile stress. The diminished failure times suggest a decrease in the activation energy for aluminum grain boundary self‐diffusion on the order of 0.003 eV per 100 MPa of applied stress, resulting in a MTTF reduction of 10% at 210 °C for an increase in tensile stress of 100 MPa.
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66.30.Qa Electromigration
85.40.Ls Metallization, contacts, interconnects; device isolation

Secondary electrons generated by fast neutral bombardment of the growing film during laser ablation deposition

S. H. Brongersma, J. C. S. Kools, T. S. Baller, H. C. W. Beijerinck, and J. Dieleman

Appl. Phys. Lett. 59, 1311 (1991); http://dx.doi.org/10.1063/1.105484 (3 pages) | Cited 7 times

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Using an ion‐probe method, time‐of‐flight measurements have been performed on the particles produced during excimer ablation of TiN. It is found that the number of ions produced in these ablation processes is quite small. The positive current due to secondary electrons departing from the detector and generated by fast neutral bombardment of the growing film vastly exceeds the current of positive ions arriving at the detector. This renders the ion‐probe method unsuited for the determination of ion concentrations and ion velocity distributions.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
07.75.+h Mass spectrometers

Polarization insensitive tunable liquid‐crystal etalon filter

J. S. Patel

Appl. Phys. Lett. 59, 1314 (1991); http://dx.doi.org/10.1063/1.105485 (3 pages) | Cited 13 times

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A polarization insensitive, electrically tunable Fabry‐Perot structure is demonstrated. The polarization insensitivity is realized by using two different regions of the same cell having optic axes orthogonal to each other. Using a compact geometry, the input beam of light is divided so that equal amounts pass through the two regions and thus for light of arbitrary input polarization, half of the intensity is transmitted at the resonant wavelength. We show that a wide tuning range of the order of 100 nm is possible using this geometry with a band pass of 0.7 nm, and a 70 nm free spectral range.
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42.79.Ci Filters, zone plates, and polarizers
42.25.Ja Polarization
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order

In situ determination of flux nonuniformities during molecular beam epitaxial growth

B. V. Shanabrook, D. S. Katzer, and R. J. Wagner

Appl. Phys. Lett. 59, 1317 (1991); http://dx.doi.org/10.1063/1.105486 (3 pages) | Cited 2 times

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We have observed an amplitude modulation superimposed on growth induced reflection high energy electron diffraction (RHEED) oscillations in molecular beam epitaxial growth of GaAs, AlSb, and GaSb. An analysis of spatially resolved luminescence measurements from a single GaAs/Al0.3Ga0.7As quantum well and RHEED oscillation data verifies an earlier suggestion of Van Hove and co‐workers that this modulation is related to nonuniform group III fluxes at the substrate. This phenomenon is very useful because it allows a quantitative in situ determination of group III flux nonuniformity. Furthermore, this study indicates that theories relating the decay of the RHEED oscillations to growth induced roughening of the surface should account for modifications that arise in the apparent decay rate because of flux nonuniformities.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Low‐temperature magnetotransport experiments in pseudomorphic GaAs/Ga0.87In0.13As/Al0.40Ga0.60As semiconductor‐insulator‐semiconductor field‐effect transistors

P. E. Schmidt, E. Barbier, M. Rossmanith, and M. Dobers

Appl. Phys. Lett. 59, 1320 (1991); http://dx.doi.org/10.1063/1.105487 (3 pages) | Cited 1 time

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Low‐temperature magnetotransport measurements on a molecular‐beam‐epitaxy‐grown pseudomorphic GaAs‐Ga0.87In0.13As‐AlxGa1−xAs‐GaAs semiconductor‐insulator‐semiconductor field‐effect transistor are reported. In magnetic fields up to 12 T, the sample reveals clearly the integer quantum Hall effect. By varying the gate voltage, the sheet electron concentration of the two‐dimensional electron gas can be tuned from depletion to 2×1012 cm−2. The dependence of the electron concentration and the mobility is studied as a function of the gate voltage.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Tv Field effect devices

On the formation of the SbGa heteroantisite in metalorganic vapor‐phase epitaxial GaAs:Sb

R. Yakimova, P. Omling, B. H. Yang, L. Samuelson, J.‐O. Fornell, and L. Ledebo

Appl. Phys. Lett. 59, 1323 (1991); http://dx.doi.org/10.1063/1.105488 (3 pages) | Cited 16 times

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Metalorganic vapor‐phase epitaxial growth of GaAs doped with isovalent Sb is reported. By increasing the trimethylantimony concentration during growth the total Sb concentration was varied between 1×1017–1×1019 cm−3. A new deep level defect with an activation energy of the thermal emission rates of Ec−0.54 eV is observed. The defect concentration increases with increasing As partial pressure and with increasing Sb doping. It is also found that the EL2 concentration decreases with increasing Sb doping. The new energy level is suggested to be the 0/+ transition of the SbGa heteroantisite defect. No photocapacitance quenching effect, reflecting a metastable state as seen for EL2(AsGa), is observed for SbGa.
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71.55.Eq III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Thermally stimulated current in neutron‐transmutation‐doped semi‐insulating GaAs

K. Kuriyama, K. Yokoyama, and Akemi Satoh

Appl. Phys. Lett. 59, 1326 (1991); http://dx.doi.org/10.1063/1.105489 (3 pages) | Cited 8 times

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The evaluation of the defects in neutron‐transmutation‐doped semi‐insulating GaAs was studied using a thermally stimulated current (TSC) method. Some native defects were decomposed by the neutron irradiation and one TSC peak was observed in an as‐irradiated sample. This peak is associated with a complex defect, which is identified as a AsGa‐VAs complex according to the analysis of the activation energy.
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61.72.Bb Theories and models of crystal defects
61.80.Hg Neutron radiation effects
72.20.Pa Thermoelectric and thermomagnetic effects
71.55.Eq III-V semiconductors

Valence‐band offset in strained GaAs‐InxGa1−xAs superlattices

B. Jogai

Appl. Phys. Lett. 59, 1329 (1991); http://dx.doi.org/10.1063/1.105490 (3 pages) | Cited 13 times

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The valence (or conduction)‐band offset for GaAs‐InGaAs superlattices is determined by comparing the calculated energies with conduction intersubband energies obtained from electronic Raman scattering (ERS). A valence‐band offset of 40% is estimated for samples with an In content of about 20%, whereas the offset is found to be 60% for samples with an In content of about 5%.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.20.At Surface states, band structure, electron density of states
73.61.Ey III-V semiconductors
71.55.Eq III-V semiconductors

A metal grating coupled bound‐to‐miniband transition GaAs multiquantum well/superlattice infrared detector

Larry S. Yu and Sheng S. Li

Appl. Phys. Lett. 59, 1332 (1991); http://dx.doi.org/10.1063/1.105491 (3 pages) | Cited 48 times

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See Also: Erratum

Show Abstract
We report here a new metal grating coupled top illumination, bound‐to‐miniband transition multiple quantum well/superlattice GaAs/AlGaAs long wavelength infrared detector. By using resonant tunneling and coherent transport along the superlattice miniband, at the same time increasing the effective barrier height of the quantum well and reducing the noise‐like charge transport higher energy bandwidth, a peak detectivity D∗ of 1.6×1010 cm√Hz/W at 8.9 μm and T= 77 K was obtained for this detector.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.30.De Semiconductor-device characterization, design, and modeling
72.80.Ey III-V and II-VI semiconductors
78.30.Fs III-V and II-VI semiconductors

B diffusion in Si predamaged with Si+ near the threshold dose of amorphization

Masataka Kase, Yoshio Kikuchi, Mami Kimura, Haruhisa Mori, and Tsutomu Ogawa

Appl. Phys. Lett. 59, 1335 (1991); http://dx.doi.org/10.1063/1.105492 (3 pages) | Cited 2 times

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We studied B diffusion in Si predamaged with Si+ near the threshold dose of amorphization. In Si preimplanted in the amorphization condition (Si+ 40 keV, 5.0×1014 cm−2), a B‐profile kink appears to be induced from retarded diffusion after 800 °C annealing. In the 3.0×1014 cm−2 preimplanted sample, an enhanced diffusion tail appears in addition to the kink. The tail has a diffusivity of 1×10−14 cm2/s. Amorphous islands about 10 nm in diameter were observed in Si predamaged with Si+ 40 keV, 3.3×1014 cm−2 by a cross‐sectional transmission electron microscope. We speculate that the kink and tail originate in the vacancy and interstitial‐rich region, respectively.
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61.72.uf Ge and Si
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.80.Jh Ion radiation effects
66.30.J- Diffusion of impurities

Implantation damage in GaAs‐AlAs superlattices of different layer thickness

E. A. Dobisz, M. Fatemi, H. B. Dietrich, A. W. McCormick, and J. P. Harbison

Appl. Phys. Lett. 59, 1338 (1991); http://dx.doi.org/10.1063/1.105493 (3 pages) | Cited 3 times

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We report that two GaAs‐AlAs superlattices of different layer thickness show dramatically different crystal damage when ion irradiated under identical conditions. The samples, held at 77 K, were implanted with 100 keV 28Si at doses of 3×1013 cm−2 to 1×1015 cm−2. Ion channeling results show amorphization threshold doses of 1×1015 cm−2 for the 7.0 nm GaAs‐8.5 nm AlAs superlattice and 4×1014 cm−2 for the 3.5 nm GaAs‐5.0 nm AlAs superlattice. At low doses, the shorter period superlattice was more robust, with no damage peak observed in ion channeling spectra for doses as high as 1×1014 cm−2. For a dose of 7×1013 cm−2, double crystal x‐ray diffraction measurements show a 6 arcsec broadening of the (004) peak, relative to that of the unimplanted sample, for both superlattices. However, only the finer period superlattice exhibits a broadening (10 arcsec) of the (224) diffracted peak indicating a distortion in an additional direction. A mechanism involving the formation of slightly misaligned crystal domains is suggested to describe the behavior of the finer period superlattice.
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61.80.Jh Ion radiation effects
61.72.U- Doping and impurity implantation
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Kinetics of thermal stress induced void growth in narrow aluminum lines

P. Børgesen, J. K. Lee, C. A. Paszkiet, and C.‐Y. Li

Appl. Phys. Lett. 59, 1341 (1991); http://dx.doi.org/10.1063/1.105302 (3 pages) | Cited 3 times

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1‐μm‐wide Al lines were passivated at 300 °C and annealed at 400 °C. The thermal stress induced growth of individual voids was monitored during room‐temperature storage. The growth kinetics of voids are analyzed in terms of a grain boundary diffusion controlled model.
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61.72.Mm Grain and twin boundaries
85.40.Ls Metallization, contacts, interconnects; device isolation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
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