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16 Sep 1991

Volume 59, Issue 12, pp. 1395-1514

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Etched‐facet AlGaAs triangular‐shaped ring lasers with output coupling

A. Behfar‐Rad, J. M. Ballantyne, and S. S. Wong

Appl. Phys. Lett. 59, 1395 (1991); http://dx.doi.org/10.1063/1.105317 (3 pages) | Cited 4 times

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Total and partial reflection are demonstrated at the bends of V‐shaped lasers. By varying the angle of incidence to the facet at the bend, the reflectivity at this facet can be changed. Two totally and one partially reflecting V‐shaped lasers are combined in a unibodied structure to realize a triangular‐shaped ring laser (trilaser). Trilasers are made of three sections which meet at three facets. Two of the facets provide total internal reflection while the third allows partial transmission from which light output is obtained. The Q of the resultant planar cavity is modified by geometry, without the need for facet coating. V‐shaped lasers and trilasers are formed by using the chemically assisted ion beam etching technique in an AlGaAs/GaAs‐based single quantum well graded‐index separate confinement heterostructure material.
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42.60.By Design of specific laser systems
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
85.60.Jb Light-emitting devices

Acoustic graded‐index lenses

C. K. Jen, Z. Wang, A. Nicolle, C. Neron, E. L. Adler, and J. Kushibiki

Appl. Phys. Lett. 59, 1398 (1991); http://dx.doi.org/10.1063/1.105318 (3 pages) | Cited 3 times

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Experimental investigations of the focusing behavior of rods having acoustically graded‐index profile across the rod diameter are presented for the first time. The ray acoustics approach is used for the theoretical interpretation. Acoustic velocity profiles have been measured using a 225 MHz line focus beam scanning acoustic microscope. The focusing behavior is visualized with a Schlieren system.
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43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants
43.35.Yb Ultrasonic instrumentation and measurement techniques
43.30.Yj Transducers and transducer arrays for underwater sound; transducer calibration

Extremely‐low‐threshold and high‐temperature operation in a photopumped ZnSe/ZnSSe blue laser

K. Nakanishi, I. Suemune, Y. Fujii, Y. Kuroda, and M. Yamanishi

Appl. Phys. Lett. 59, 1401 (1991); http://dx.doi.org/10.1063/1.105319 (3 pages) | Cited 28 times

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A ZnSe/ZnSSe blue semiconductor laser was demonstrated to show very low threshold by direct photopumping of the ZnSe active layer. The lowest threshold at the excitation wavelength of 445 nm was 10 kW/cm2 at 300 K which is equivalent to the current density of 3.6 kA/cm2. This is the lowest threshold ever reported in II‐VI photopumped lasers and is approaching the theoretically calculated threshold. The characteristic temperature of the threshold, which characterizes the temperature dependence of the threshold in the exponential form, was 124 K up to the measured 400 K and was comparable to III‐V double‐heterostructure lasers. The differential quantum efficiency remained the similar level up to 400 K and its decrease observed at 400 K was within 23% of the efficiency at 300 K.
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42.55.Px Semiconductor lasers; laser diodes
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Cumulative nature of two‐wave mixing and its dependence on crystal orientation

Joby Joseph, K. Singh, and P. K. C. Pillai

Appl. Phys. Lett. 59, 1404 (1991); http://dx.doi.org/10.1063/1.105320 (3 pages)

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Experimental investigation into the cumulative nature of two‐wave mixing in photorefractive BaTiO3 crystal has been carried out. Signal beam amplification via two‐beam coupling has been studied with continuous wave exposure and periodic pulse exposure. A comparison of the two shows the presence of a noncumulative component in the signal beam gain. Dependence of this component on crystal c‐axis orientation has been measured.  <l >
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.30.Lr Modulation and optical transfer functions
42.70.-a Optical materials

Buried heterostructure laser fabricated using three‐step gas source molecular beam epitaxy

J.‐L. Liévin, D. Bonnevie, F. Poingt, C. Starck, D. Sigogne, O. Le Gouezigou, and L. Goldstein

Appl. Phys. Lett. 59, 1407 (1991); http://dx.doi.org/10.1063/1.105321 (2 pages) | Cited 3 times

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Buried heterostructure lasers fabricated using a three‐step gas source molecular beam epitaxy (GSMBE) process are presented for the first time. We propose a new structure design compatible with nonselective regrowth for the blocking layers, therefore avoiding the use of a dielectric mask. The structure is terminated by a second overgrowth after a material lift‐off. Preliminary results show cw operation with threshold currents of 60 mA for 800‐μm‐long devices and maximum output power up to 27 mW per facet.
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42.55.Px Semiconductor lasers; laser diodes
42.82.-m Integrated optics
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Direct visual observation of powder dynamics in rf plasma‐assisted deposition

A. A. Howling, Ch. Hollenstein, and P.‐J. Paris

Appl. Phys. Lett. 59, 1409 (1991); http://dx.doi.org/10.1063/1.105322 (3 pages) | Cited 42 times

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Contamination due to particles generated and suspended in silane rf plasmas is investigated. Powder is rendered visible by illumination of the reactor volume. This simple diagnostic for global, spatio‐temporal powder dynamics is used to study particle formation, trapping, and powder reduction by power modulation.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
52.25.-b Plasma properties
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation

Study of the composition of thin dielectrics grown on Si in a pure N2O ambient

T. Y. Chu, W. Ting, J. H. Ahn, S. Lin, and D. L. Kwong

Appl. Phys. Lett. 59, 1412 (1991); http://dx.doi.org/10.1063/1.105323 (3 pages) | Cited 29 times

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The composition of ultrathin oxides grown on both [100] and [111]Si substrates in pure N2O in a conventional furnace has been studied using Auger electron spectroscopy (AES) analysis, chemical etching, and electrical measurements. Results show a peak nitrogen concentration at the Si‐SiO2 interface which decreases from the Si‐SiO2 interface to the oxide surface. This nitrogen distribution is responsible for superior electrical properties of metal‐oxide‐semiconductor (MOS) devices with these films as gate dielectrics.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
84.32.Tt Capacitors
77.55.-g Dielectric thin films

Nanocomposites by fractal growth of electrodeposited silver in ion‐exchanged oxide glasses

S. Roy and D. Chakravorty

Appl. Phys. Lett. 59, 1415 (1991); http://dx.doi.org/10.1063/1.105324 (3 pages) | Cited 13 times

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Clusters of metallic silver have been formed by electrodeposition within the surface of an oxide glass which was subjected to an alkali silver ion exchange process. The clusters have a fractal structure with a Hausdorff dimension D around 1.86 over a length scale 10–140 μm. Electron micrograph of the sample indicates the possibility of a crossover to a nonfractal regime at length scales of the order of a few hundred nanometers. The fractal growth within the glass results in the formation of a glass metal nanocomposite with a particle diameter around 12 nm.
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81.05.Pj Glass-based composites, vitroceramics
42.70.Ce Glasses, quartz
42.79.Gn Optical waveguides and couplers

High‐temperature compressive plastic deformation of Nd2Fe14B single crystals

Ch. Kuhrt, L. Schultz, K. Schnitzke, S. Hock, and R. Behrensmeier

Appl. Phys. Lett. 59, 1418 (1991); http://dx.doi.org/10.1063/1.105325 (3 pages) | Cited 6 times

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The compressive deformation behavior of Nd2Fe14B single crystals at temperatures between 900 and 1100 °C has been investigated. Considerable ductility occurs only at temperatures above 1000 °C, suggesting that the plasticity of the Nd2Fe14B phase has very little effect on the formation of texture during die‐upsetting of microcrystalline Nd‐Fe‐B hard magnetic alloys.
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62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep

Continuous amorphous antimony thin films obtained by low‐energy cluster beam deposition

Pablo Jensen, Patrice Melinon, Michel Treilleux, Alain Hoareau, Jian Xiong Hu, and Bernard Cabaud

Appl. Phys. Lett. 59, 1421 (1991); http://dx.doi.org/10.1063/1.105326 (3 pages) | Cited 10 times

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We have prepared continuous amorphous antimony thin films by low‐energy cluster beam deposition. Contrary to the antimony films prepared by molecular beam deposition, this new technique allows preparation of continuous amorphous films which are stable at room temperature. This study has been carried out by combining electrical measurements and transmission electron microscopy observations.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
61.43.Fs Glasses
61.43.-j Disordered solids
61.44.Br Quasicrystals
73.61.At Metal and metallic alloys

Cu passivation: A method of inhibiting copper‐polyamic acid interactions

D‐Y. Shih, J. Kim, G. F. Walker, C‐A. Chang, J. Paraszczak, S. Nunes, and C. Yang

Appl. Phys. Lett. 59, 1424 (1991); http://dx.doi.org/10.1063/1.105327 (3 pages) | Cited 2 times

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The use of passivation metals to protect Cu from interacting with polyamic acid precursor has been investigated by means of cross‐sectional transmission electron microscopy, Rutherford backscattering spectroscopy, and resistivity measurements. Palladium or platinum, each 100 nm in thickness, was electron‐beam evaporated onto Cu surface. Although not a good diffusion barrier against Cu outdiffusion, these metals can still effectively inhibit the Cu‐polyamic acid interactions and, consequently, prevent the formation of Cu oxide precipitates in the polymer film. The trade‐off is that, since Pd and Pt both diffuse into Cu and form solid solution alloys, the resistivity of Cu is raised significantly due to the enhanced electron‐impurity scattering. In contrast, Cr serves both as a passivation metal and a good diffusion barrier without raising Cu resistivity. This is probably due to the lack of mutual solubility between Cr and Cu.  
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85.40.Ls Metallization, contacts, interconnects; device isolation
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
61.72.up Other materials

Mole fractions of H, CH3, and other species during filament‐assisted diamond growth

W. L. Hsu

Appl. Phys. Lett. 59, 1427 (1991); http://dx.doi.org/10.1063/1.105276 (3 pages) | Cited 123 times

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Molecular beam mass spectrometry has been used to determine the concentrations of several free‐radical and stable gaseous species in a hot‐filament reactor under diamond‐growth conditions. At a filament temperature of 2600 K, the H‐atom concentration in the proximity of the growth surface was found to decrease with increasing addition of methane to the feed gas, dropping by more than an order of magnitude when the methane percentage was increased from 0.4% to 7.2%. Concurrent with this decrease, large changes in the concentration of the hydrocarbon species were observed. All numerical modeling results that have been reported to date do not include heterogeneous reactions on the filament and have failed to predict or explain these observations. Also from the measured mole fractions, the reaction H+CH4↔H2+CH3 was found to be in nonequilibrium near the surface, with the reverse rate ranging from approximately three to sixteen times larger than the forward rate. We attribute the cause of this nonequilibrium to heterogeneous reactions on the surface of the substrate.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Lateral solid phase crystallization of amorphous Si induced by patterned indium tin oxide on a glass substrate

M. Guendouz, J. Richard, P. Joubert, and L. Haji

Appl. Phys. Lett. 59, 1430 (1991); http://dx.doi.org/10.1063/1.105277 (3 pages) | Cited 3 times

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Undoped amorphous silicon films were deposited by plasma‐enhanced chemical vapor deposition on patterned indium tin oxide (ITO) onto glass substrate. The solid‐phase crystallization of these films, after successive annealing at 500 and 600 °C, was studied by optical and transmission electron microscopy. It was found that nucleation occurs very quickly on ITO and slowly on glass. The ITO patterns act as nucleation centers for grains which laterally grow and the crystalline phase spread over the glass. Results are compared with those obtained from silicon films deposited by low pressure chemical vapor deposition.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.10.Bk Growth from vapor

Cobalt thin films prepared by chemical vapor deposition from cobaltous acetate

Toshiro Maruyama and Tsuyoshi Nakai

Appl. Phys. Lett. 59, 1433 (1991); http://dx.doi.org/10.1063/1.105278 (2 pages) | Cited 6 times

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Cobalt thin films were prepared by a low‐temperature atmospheric‐pressure chemical vapor deposition method. The raw material was cobaltous acetate which is nontoxic and easy to handle. At a reaction temperature of 300 °C, [111]‐oriented polycrystalline films can be obtained on amorphous substrates. Increasing the H2 partial pressure over the requirement for both the highest deposition rate and lowest resistivity promotes the crystallization with [111] preferential orientation of the film without affecting the crystallite size. Cobaltous acetate appears to offer a viable alternative to cobalt acetylacetonate for low‐temperature cobalt film production.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Body current scanning: A novel technique for characterizing the floating body effects and parasitic bipolar action in silicon‐on‐insulator metal‐oxide‐semiconductor transistors

Patrick S. Liu and G. P. Li

Appl. Phys. Lett. 59, 1435 (1991); http://dx.doi.org/10.1063/1.105279 (3 pages) | Cited 2 times

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Body current scanning (BCS) is a new concept that exploits body (substrate) current reversal in NPN bipolar transistors to characterize the floating body effects and parasitic bipolar action in n‐channel silicon‐on‐insulator (SOI) metal‐oxide‐semiconductor (MOS) transistors. At sufficiently high drain biases, a parasitic bipolar transistor modeled in parallel with the SOI MOS transistor is activated by hole accumulation in the body. BCS directly measures the floating body potential corresponding to the parasitic bipolar base, and is capable of distinguishing between the respective current contributions from MOS and bipolar devices. Consequently, the evaluation of parasitic bipolar and the influence of floating body on SOI device characteristics are facilitated.
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85.30.Pq Bipolar transistors
85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling

Low‐pressure chemical vapor deposition of low in situ phosphorus doped silicon thin films

M. Sarret, A. Liba, and O. Bonnaud

Appl. Phys. Lett. 59, 1438 (1991); http://dx.doi.org/10.1063/1.105280 (2 pages) | Cited 5 times

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In situ low phosphorus doped silicon films are deposited onto glass substrates by low‐pressure chemical vapor deposition method. The deposition parameters, temperature, total pressure, and pure silane gas flow are, respectively, fixed at 550 °C, 0.08 Torr, and 50 sccm. The varying deposition parameter is phosphine/silane mole ratio; when this ratio varies from 2×10−6 to 4×10−4, the phosphorus concentration and the resistivity after annealing, respectively, vary from 2×1018 to 3×1020 atoms cm−3 and from 1.5 Ω cm to 2.5×10−3 Ω cm.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Atomic layer epitaxy of device quality GaAs with a 0.6 μm/h growth rate

P. C. Colter, S. A. Hussien, A. Dip, M. U. Erdogan, W. M. Duncan, and S. M. Bedair

Appl. Phys. Lett. 59, 1440 (1991); http://dx.doi.org/10.1063/1.105281 (3 pages) | Cited 3 times

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The two main problems, carbon contamination and a low growth rate, facing atomic layer epitaxy (ALE) of GaAs are addressed. A reactor was designed to process 2 in. wafers with a growth rate as high as 0.6 μm/h. Background carbon concentration less than 1015 cm−3 and a 77 K mobility of 30 000 cm2/V s were measured. The new reactor is based on the concept of rotating the substrate between streams of reactant gases with provisions to shear off and sweep away the thermal boundary layer. Self‐limited growth was observed for a growth temperature as high as 600 °C.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.55.Cr III-V semiconductors
72.80.Ey III-V and II-VI semiconductors

Stability of hydrogenated amorphous silicon deposited at high temperatures with a remote hydrogen plasma

N. M. Johnson, C. E. Nebel, P. V. Santos, W. B. Jackson, R. A. Street, K. S. Stevens, and J. Walker

Appl. Phys. Lett. 59, 1443 (1991); http://dx.doi.org/10.1063/1.105282 (3 pages) | Cited 34 times

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It is demonstrated that the stability of hydrogenated amorphous silicon (a‐Si:H) is improved by deposition under the combined conditions of high substrate temperature (e.g., TD=400 °C) and high hydrogen dilution, as are readily achieved in a remote hydrogen plasma reactor. In comparison with optimized films from conventional rf glow discharge deposition (e.g., silane, 230 °C, 2 W), undoped high TD films possess a lower midgap defect density, the dark dc conductivity in n‐type (phosphorus‐doped) films displays higher equilibration temperatures and longer relaxation times at a given temperature with an activation energy of 1.0 eV, and undoped high TD films have a lower saturated density of light‐induced defects. It is proposed that the ability to achieve the improved stability is a consequence of two effects: (1) the use of hydrogen dilution during deposition to maintain the hydrogen concentration in the film near 10 at. % even at 400 °C and (2) the possibility that at high TD’s the hydrogen is more stably incorporated in the random network and/or that the density of weak Si—Si bonds is smaller.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
71.55.Ht Other nonmetals
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.80.Ng Disordered solids

Effect of growth temperature on photoluminescence of InAs grown by organometallic vapor phase epitaxy

Z. M. Fang, K. Y. Ma, R. M. Cohen, and G. B. Stringfellow

Appl. Phys. Lett. 59, 1446 (1991); http://dx.doi.org/10.1063/1.105283 (3 pages) | Cited 21 times

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Infrared photoluminescence (PL) from InAs epitaxial layers grown by atmospheric pressure organometallic vapor phase epitaxy (OMVPE) has been studied as a function of the growth temperature (350–600 °C). It is shown that the PL spectra depend strongly on the growth temperature. The integrated PL intensity decreases by about two orders of magnitude as the growth temperature decreases from 500 to 350 °C. In addition, Hall‐effect measurements show that the n‐type impurity concentration in InAs increases rapidly as the growth temperature decreases. The results of secondary‐ion mass spectroscopy show that the dominant impurity is carbon and its concentration varies with the growth temperature in a similar way to the electron concentration. This confirms that carbon is a donor in InAs. The decreasing PL intensity with decreasing growth temperature is attributed to the increasing carbon concentration.
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78.55.Cr III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
73.61.Ey III-V semiconductors

Reflective filters based on single‐crystal GaN/AlxGa1−xN multilayers deposited using low‐pressure metalorganic chemical vapor deposition

M. Asif Khan, J. N. Kuznia, J. M. Van Hove, and D. T. Olson

Appl. Phys. Lett. 59, 1449 (1991); http://dx.doi.org/10.1063/1.105284 (3 pages) | Cited 31 times

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In this letter we report the first ever fabrication and characterization of reflective quarter wave filter stacks based on single‐crystal GaN/AlxGa1−xN multilayers. The filters were designed for peak reflectivities at 400 and 450 nm. The designed epitaxial layers were deposited using a low‐pressure metalorganic chemical vapor deposition system. We measured the interface abruptness and the thicknesses of individual stack layers (GaN and AlxGa1−xN) using a unique Zalar sputter Auger depth profiling procedure and x‐ray analysis. The abruptness was found to be better than 40 Å, which is the instrument measurement limit. For 18‐period filters the measured peak reflectivities of 80% and 95% agreed reasonably well with the estimations of 88% and 95% of our multilayer designs.
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42.79.Ci Filters, zone plates, and polarizers
78.66.-w Optical properties of specific thin films
77.55.-g Dielectric thin films

Nonlinear dependencies of Si diffusion in δ‐doped GaAs

J. E. Cunningham, T. H. Chiu, W. Jan, and T. Y. Kuo

Appl. Phys. Lett. 59, 1452 (1991); http://dx.doi.org/10.1063/1.105285 (3 pages) | Cited 4 times

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We examine atomic diffusion of Si, when initially δ doped into very pure GaAs layers grown by gas source molecular beam epitaxy. A nonlinear Si diffusion coefficient versus inverse temperature is observed as a two‐component Arrhenius dependence in which the activation energies change by 1.5 eV. Furthermore, when Si diffusion is thermally activated with the lower energy kinetics, the corresponding impurity profile grows in width linearly with the anneal time. We explain the above departures of measured Si diffusivity from classical impurity diffusion via a nonequilibrated concentration of vacancies generated at the δ position during the anneal.
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66.30.J- Diffusion of impurities
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.U- Doping and impurity implantation

1.4 ps rise‐time high‐voltage photoconductive switching

T. Motet, J. Nees, S. Williamson, and G. Mourou

Appl. Phys. Lett. 59, 1455 (1991); http://dx.doi.org/10.1063/1.105286 (3 pages) | Cited 31 times

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We report on the generation of 825 V electrical pulses with 1.4 ps rise time and 4.0 ps duration using a pulse‐biased low‐temperature‐grown GaAs photoconductive switch triggered by an amplified femtosecond dye laser. Dependence of the pulse shape on both electric field and optical energy is observed and discussed.
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85.60.-q Optoelectronic devices
72.40.+w Photoconduction and photovoltaic effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Ey III-V and II-VI semiconductors

Homogeneous hydrogen‐terminated Si(111) surface formed using aqueous HF solution and water

Satoru Watanabe, Noriaki Nakayama, and Takashi Ito

Appl. Phys. Lett. 59, 1458 (1991); http://dx.doi.org/10.1063/1.105287 (3 pages) | Cited 90 times

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Aqueous HF etching of silicon surface removes surface oxide, leaving a silicon surface terminated by atomic hydrogen. We studied the effect of the immersion in water, following HF etching, on the surface hydride structure and flatness, by measuring Si‐H stretching vibration using infrared absorption spectroscopy. Immersion at 20 °C flattens the Si(111) surface, which is atomically rough just after etching, to some extent. Boiling water (100 °C) produces an atomically flat surface homogeneously covered with silicon monohydride (—SiH) normal to the surface and free of oxidation. The surface has a low defect density of less than 0.5%.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Ja Surface and interface dynamics and vibrations
81.65.-b Surface treatments

Ga delta‐doping layers in silicon

P. M. Zagwijn, Y. N. Erokhin, W. F. J. Slijkerman, J. F. van der Veen, G. F. A. van de Walle, D. J. Gravesteijn, and A. A. van Gorkum

Appl. Phys. Lett. 59, 1461 (1991); http://dx.doi.org/10.1063/1.105288 (3 pages) | Cited 4 times

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Delta‐doping layers in silicon have been made by deposition of 0.39 monolayer Ga on Si(001). The dopant atoms have been buried in the host crystal using a solid phase epitaxial growth method. The grown structures are characterized in situ by high‐resolution Rutherford backscattering spectrometry. A fraction of 30% of the Ga atoms is located at subsitutional sites in a spike less than 1.0 nm wide; the other atoms are at the surface. The surface atoms desorb upon annealing at 985 K, whereas the buried atoms are redistributed only slightly. At temperatures higher than 1100 K the profile degrades completely.
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61.72.uf Ge and Si
61.66.Bi Elemental solids
61.66.Dk Alloys
68.35.Fx Diffusion; interface formation
68.37.Vj Field emission and field-ion microscopy

Stress‐migration related electromigration damage mechanism in passivated, narrow interconnects

C.‐Y. Li, P. Børgesen, and T. D. Sullivan

Appl. Phys. Lett. 59, 1464 (1991); http://dx.doi.org/10.1063/1.105289 (3 pages) | Cited 29 times

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In passivated metal interconnects, grain boundary sliding during cooldown from high temperature process steps provides the driving force and sites for void nucleation. Furthermore, residual stresses are known to result in appreciable growth of voids during and after cooldown. The current driven coalescence of such voids is shown to constitute an important failure mechanism for the lines during electromigration testing.
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66.30.Qa Electromigration
85.40.Ls Metallization, contacts, interconnects; device isolation
85.40.Bh Computer-aided design of microcircuits; layout and modeling
85.30.De Semiconductor-device characterization, design, and modeling
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