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7 Oct 1991

Volume 59, Issue 15, pp. 1811-1913

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Factors controlling resolution in the laser‐induced aqueous etching of semiconductors using a focused cw beam

Shi Li, Giuseppe Scelsi, Mark N. Ruberto, Robert Scarmozzino, and Richard M. Osgood

Appl. Phys. Lett. 59, 1884 (1991); http://dx.doi.org/10.1063/1.106177 (3 pages) | Cited 3 times

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We present a study of selected factors which can control or improve the resolution of light‐induced wet etching of semiconductors; specifically we examine the case of a focused Gaussian cw laser beam. The results have important implications for the recent application of the technique to the maskless fabrication of integrated optic device structures. Factors considered include semiconductor doping, solution composition, laser intensity, and the effect of applied bias. Results are discussed in the context of hole diffusion and drift in the semiconductor and transport through the solution/semiconductor interface.
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81.65.-b Surface treatments
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
82.45.-h Electrochemistry and electrophoresis

Electron cyclotron resonance assisted low temperature ultrahigh vacuum chemical vapor deposition of Si using silane

D. S. L. Mui, S. F. Fang, and H. Morkoç

Appl. Phys. Lett. 59, 1887 (1991); http://dx.doi.org/10.1063/1.106178 (3 pages) | Cited 26 times

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Deposition of single‐crystal homoepitaxial Si at low temperatures assisted by an electron cyclotron resonance (ECR) generated plasma using a mixture of helium and silane gases in an ultrahigh vacuum chemical vapor deposition (UHVCVD) chamber is reported. The pure silane gas is introduced into the UHVCVD chamber through a showerhead located above the substrate and is excited indirectly by the helium plasma brought downstream from the ECR chamber. At a chamber pressure of 5×10−4 Torr epitaxial single‐crystal Si can be obtained at a substrate temperature Ts as low as 400 °C. Variation of the deposition rate with respect to the microwave power, Pμ, at different temperatures suggests a hydrogen inhibited deposition process at low temperatures. At 460 °C the deposition rate increases with Pμ below 60 W and saturates for Pμ beyond this value. On the other hand, at a Ts of 610 °C, this saturation effect is not observed and the deposition rate increases linearly with Pμ. In this plasma‐assisted deposition, a much reduced Ts dependence of the deposition rate is observed. We have used this deposition technique successfully in obtaining a Si3N4/(epi‐Si) metal‐insulator‐semiconductor capacitor with an interface trap density of 2×1010 eV−1 cm−2 as determined by the conductance method.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

New carbon related defects formed in nitrogen rich Czochralski silicon crystals

Akito Hara and Akira Ohsawa

Appl. Phys. Lett. 59, 1890 (1991); http://dx.doi.org/10.1063/1.106179 (3 pages)

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We studied some electrical properties of silicon crystals containing carbon, nitrogen, and oxygen. Nitrogen‐oxygen complexes are formed in nitrogen‐ and oxygen‐rich silicon crystals. However, we found that carbon suppresses the formation of nitrogen‐oxygen complexes. Moreover, new shallow effective‐mass‐like defects with g≂1.999, which includes carbon and nitrogen, were found. We could not observe the hyperfine interaction of nitrogen by electron spin resonance measurements even though the new defects contain nitrogen having nuclear spin. New effective‐mass‐like defects may be series‐like defects, because two effective‐mass‐like defects are observed. These properties resemble those of both nitrogen‐oxygen complexes and thermal donors.
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71.55.Ht Other nonmetals
61.72.Bb Theories and models of crystal defects
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.72.uf Ge and Si

Metalorganic molecular beam epitaxy of 1.3 μm quaternary layers and heterostructure lasers

R. A. Hamm, D. Ritter, H. Temkin, M. B. Panish, J. M. Vandenberg, and R. D. Yadvish

Appl. Phys. Lett. 59, 1893 (1991); http://dx.doi.org/10.1063/1.106180 (3 pages) | Cited 9 times

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Metalorganic molecular beam epitaxy of InGaAsP quaternary layers with the composition corresponding to the band gap at 1.3 μm has been investigated for growth temperatures ranging from 485 °C to 530 °C. From the x‐ray diffraction and room temperature photoluminescence measurements Ga incorporation was found to be extremely growth temperature dependent. Photoluminescence linewidths increased rapidly for a negative lattice mismatch exceeding the critical value, whereas for positive mismatch no such broadening was observed. For lattice matched layers linewidths were broader for the higher growth temperatures. Threshold current densities ranging from 0.7 to 2.0 kA/cm2 were measured for conventional and multi‐quantum‐well broad area lasers with the active layers based on the 1.3 μm quaternary.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
42.60.By Design of specific laser systems
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Non‐contact electrical characterization of low‐resistivity p‐type ZnSe:N grown by molecular beam epitaxy

R. M. Park, M. B. Troffer, E. Yablonovitch, and T. J. Gmitter

Appl. Phys. Lett. 59, 1896 (1991); http://dx.doi.org/10.1063/1.106181 (3 pages) | Cited 11 times

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The resistivity of p‐type ZnSe:N/GaAs heteroepitaxial layers grown by molecular beam epitaxy using a nitrogen free‐radical source has been determined as a function of both substrate temperature and the Zn‐to‐Se beam equivalent pressure (BEP) ratio employed during growth. Layer resistivities were determined using a noncontact inductive‐coupling radio‐frequency measurement technique that provided sheet conductivity data from which layer resistivities were calculated. A minimum resistivity of 0.75 Ω cm has been measured to date for p‐type ZnSe:N material grown at 235 °C with a BEP ratio of 1:2. Such a resistivity would imply a free‐hole density in the range 4×1017−8×1017 cm−3 assuming the hole mobility to be in the range 20−10 cm2 V−1 s−1, respectively.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.61.Ga II-VI semiconductors

High quality (111)B GaAs, AlGaAs, AlGaAs/GaAs modulation doped heterostructures and a GaAs/InGaAs/GaAs quantum well

Albert Chin, Paul Martin, Pin Ho, Jim Ballingall, Tan‐hua Yu, and John Mazurowski

Appl. Phys. Lett. 59, 1899 (1991); http://dx.doi.org/10.1063/1.106182 (3 pages) | Cited 30 times

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We report the successful growth of high quality molecular beam epitaxy (MBE) GaAs, AlGaAs, AlGaAs/GaAs modulation doped heterostructures and a GaAs/InGaAs/GaAs quantum well on GaAs (111)B substrates. Modulation doped heterostructures show a 77 K mobility of 145 500 cm2/V s with a sheet density of 5.0×1011 cm−2. Photoluminescence of (111)B GaAs indicates a lower carbon incorporation than achieved on (100) substrates. The low growth temperature and high material quality obtainable in (111)B growth will provide advantages for laser diodes and heterostructure field effect transistors.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
85.30.Tv Field effect devices
78.55.Cr III-V semiconductors
73.61.Ey III-V semiconductors

Y2O3 single crystalline substrate for epitaxial growth of high TC superconducting thin films

A. Oishi, H. Teshima, K. Ohata, H. Izumi, S. Kawamoto, T. Morishita, and S. Tanaka

Appl. Phys. Lett. 59, 1902 (1991); http://dx.doi.org/10.1063/1.106183 (3 pages) | Cited 8 times

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The c‐axis oriented YBa2Cu3Ox (YBCO) film has been epitaxially grown on Y2O3 (001) substrates by in situ processing for the first time to our knowledge. The in‐plane orientation relationship between YBCO and Y2O3 is 〈110〉YBCO∥〈100〉Y2O3. The film exhibits, as deposited, T0C=86.2 K, ΔT=1.2 K; JC=1.4×107 and 2.0×106 A/cm2 in a magnetic field of 0 and 5 T at 5 K, respectively. Moreover, the interface between the YBCO and Y2O3 is very sharp and chemically stable.
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74.78.-w Superconducting films and low-dimensional structures
68.35.Fx Diffusion; interface formation
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

In situ pulsed laser deposition of superconducting Ba1−xKxBiO3 thin films

B. M. Moon, C. E. Platt, R. A. Schweinfurth, and D. J. Van Harlingen

Appl. Phys. Lett. 59, 1905 (1991); http://dx.doi.org/10.1063/1.106184 (3 pages) | Cited 22 times

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We have grown superconducting thin films of Ba1−xKxBiO3 by in situ pulsed laser deposition from a stoichiometric (x=0.4) target. The best films exhibit an onset transition temperature of 28 K and have zero resistance as high as 26 K. Films are single phase and highly oriented in the (100) or (110) direction on MgO, SrTiO3, LaAlO3, and Al2O3 substrates. We have observed high‐quality normal‐insulator‐superconductor and superconductor‐insulator‐superconductor quasiparticle tunneling characteristics with the films.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
74.78.-w Superconducting films and low-dimensional structures
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition

In situ all‐laser process for deposition of Y1Ba2Cu3O7−δ film on stainless steel involving use of Y‐ZrO2‐Ag composite as a barrier layer

S. B. Ogale, V. N. Koinkar, R. Viswanathan, S. D. Roy, and S. M. Kanetkar

Appl. Phys. Lett. 59, 1908 (1991); http://dx.doi.org/10.1063/1.106185 (3 pages) | Cited 4 times

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Highly c‐axis oriented good‐quality (Tc of 88 K and Jc of 105 A/cm2 at 20 K) thin films of Y1Ba2Cu3O7−δ have been deposited on stainless‐steel substrates by an in situ all‐laser process involving use of laser‐deposited Y‐ZrO2‐Ag composite film as a barrier layer. These results are compared with those obtained for the case of the use of a bilayer configuration of Ag and Y‐ZrO2 to emphasize the importance of employing a composite film as a barrier layer.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates

Does benzene inhibit diamond film growth?

L. Robbin Martin and Stephen J. Harris

Appl. Phys. Lett. 59, 1911 (1991); http://dx.doi.org/10.1063/1.106186 (3 pages) | Cited 7 times

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Experiments were conducted to test the hypothesis that aromatic molecules inhibit the growth of diamond thin films. Small amounts of benzene vapor were added to a flowtube system for diamond film growth. In this system, diamonds are grown by adding methane or acetylene to a flow of atomic hydrogen at 800 °C. Mass spectrometric measurements verified that the benzene passed through the flowtube. No inhibition of the growth rate or decrease in the quality of the diamonds due to the presence of benzene was observed for either methane or acetylene.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
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