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14 Oct 1991

Volume 59, Issue 16, pp. 1923-2057

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Mechanism for displacive excitation of coherent phonons in Sb, Bi, Te, and Ti2O3

T. K. Cheng, J. Vidal, H. J. Zeiger, G. Dresselhaus, M. S. Dresselhaus, and E. P. Ippen

Appl. Phys. Lett. 59, 1923 (1991); http://dx.doi.org/10.1063/1.106187 (3 pages) | Cited 92 times

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Coherent phonons in Sb, Bi, Te, and Ti2O3 can be generated impulsively, and detected in the time domain through reflectivity modulation using 60 fs pulses of laser light at 2 eV. Experimental data for these opaque solids suggest that a direct Raman excitation mechanism is not responsible for coherent phonon generation. Rather, the excitation is attributed to an electronically induced displacement of the ion equilibrium coordinates.
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63.20.D- Phonon states and bands, normal modes, and phonon dispersion
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)

Ultracompact, low‐loss directional couplers on InP based on self‐imaging by multimode interference

E. C. M. Pennings, R. J. Deri, A. Scherer, R. Bhat, T. R. Hayes, N. C. Andreadakis, M. K. Smit, L. B. Soldano, and R. J. Hawkins

Appl. Phys. Lett. 59, 1926 (1991); http://dx.doi.org/10.1063/1.106188 (3 pages) | Cited 28 times

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We report extremely compact (494‐μm‐long 3 dB splitters, including input/output bends), polarization‐insensitive, zero‐gap directional couplers on InP with a highly multimode interference region that are based on the self‐imaging effect. We measured cross‐state extinctions better than 28 dB and on‐chip insertion losses of 0.5 dB/coupler plus 1 dB/cm guide propagation loss at 1523 nm wavelength.
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42.79.Gn Optical waveguides and couplers
42.79.Ci Filters, zone plates, and polarizers
42.82.-m Integrated optics

Epitaxial growth of Bi12GeO20 thin‐film optical waveguides using excimer laser ablation

K. E. Youden, R. W. Eason, M. C. Gower, and N. A. Vainos

Appl. Phys. Lett. 59, 1929 (1991); http://dx.doi.org/10.1063/1.106162 (3 pages) | Cited 17 times

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Thin‐film optical waveguides of the photorefractive optical material bismuth germanium oxide (Bi12GeO20) have been epitaxially grown onto heated zirconia substrates by excimer laser ablative sputtering. The epitaxial nature and stoichiometry of the films were verified using x‐ray diffraction analysis. Waveguide modes were observed for effective refractive indices in close agreement with theoretical predictions.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
42.79.Gn Optical waveguides and couplers
78.66.-w Optical properties of specific thin films

Photorefractive crystal waveguide with periodically reversed c axis for enhanced two‐wave mixing

Fumihiko Ito and Ken‐ichi Kitayama

Appl. Phys. Lett. 59, 1932 (1991); http://dx.doi.org/10.1063/1.106163 (3 pages) | Cited 7 times

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A photorefractive crystal waveguide with periodically reversed c axis (PCW‐PX) is proposed for enhanced photorefractive two‐wave mixing. In PCW‐PXs, only the guided modes which have a particular propagation angle with respect to the waveguide axis are selectively coupled to the other guided modes. The mode‐descriminative photorefractive coupling in two‐wave mixing is experimentally verified in prepared BaTiO3 PCW‐PXs.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.-a Optical materials

Nonlinear optical effects on the surface of acridine yellow‐doped lead‐tin fluorophosphate glass

K. X. He, William Bryant, and Putcha Venkateswarlu

Appl. Phys. Lett. 59, 1935 (1991); http://dx.doi.org/10.1063/1.106164 (3 pages) | Cited 4 times

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The second‐ and third‐order nonlinear optical properties of acridine yellow‐doped lead‐tin fluorophosphate (LTF) glass have been directly studied by measurement of surface enhanced second harmonic generation and third harmonic generation. The three photon excitation fluorescence is also observed. Based on these results, the large nonlinearities of the acridine LTF system which is a new nonlinear optical material are experimentally demonstrated.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Linear electro‐optic effect in cubic silicon carbide

Xiao Tang, Kenneth G. Irvine, Dongping Zhang, and Michael G. Spencer

Appl. Phys. Lett. 59, 1938 (1991); http://dx.doi.org/10.1063/1.106165 (2 pages) | Cited 9 times

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We report the first observation of the electro‐optic effect of cubic silicon carbide (β‐SiC) grown by a low‐pressure chemical vapor deposition reactor using the hydrogen, silane, and propane gas system. At a wavelength of 633 nm, the value of the electro‐optic coefficient r41 in β‐SiC is determined to be 2.7±0.5×10−12 m/V, which is 1.7 times larger than that in gallium arsenide measured at 10.6 μm. Also a half‐wave voltage of 6.4 kV for β‐SiC is obtained. Because of this favorable value of electro‐optic coefficient we believe that silicon carbide may be a promising candidate in electro‐optic applications for high optical intensity in the visible region.
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78.20.Jq Electro-optical effects
78.66.-w Optical properties of specific thin films

Nonlinear switching in coupled antiresonant reflecting optical waveguides

U. Trutschel, M. Mann, F. Lederer, C. Wächter, and A. D. Boardman

Appl. Phys. Lett. 59, 1940 (1991); http://dx.doi.org/10.1063/1.106142 (3 pages) | Cited 5 times

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We show that nonlinear mode coupling in a double‐antiresonant reflecting optical waveguide structure leads to the power‐dependent switching of an optical signal between remote channels.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.81.Dp Propagation, scattering, and losses; solitons
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.79.Gn Optical waveguides and couplers

Uniform p‐type impurity‐doped multiquantum well AlGaInP semiconductor lasers with a lasing wavelength of 633 nm at 20 °C

T. Tanaka, H. Yanagisawa, H. Kakibayashi, S. Minagawa, and T. Kajimura

Appl. Phys. Lett. 59, 1943 (1991); http://dx.doi.org/10.1063/1.106143 (3 pages) | Cited 2 times

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Impurity doping into a GaInP/AlGaInP multiquantum well (MQW) active layer is applied to suppress the occurrence of the ordered structure of column III elements. Calculation of the quantized energy level in an ordered and disordered GaInP quantum well (QW) shows that uniform p‐type impurity doping into a MQW structure is more effective than modulation doping for shortening the lasing wavelength. The lasing wavelength of p‐doped MQW lasers with a 3‐nm‐thick GaInP QW can be shortened to 633.2 nm at an output power of 2 mW at 20 °C. A maximum lasing temperature of 46 °C for a 630 nm band AlGaInP MQW laser with a cavity length of 450 μm is obtained.
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42.55.Px Semiconductor lasers; laser diodes
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
42.60.Fc Modulation, tuning, and mode locking

Optically induced excitonic electroabsorption in a periodically δ‐doped InGaAs/GaAs multiple quantum well structure

A. Larsson and J. Maserjian

Appl. Phys. Lett. 59, 1946 (1991); http://dx.doi.org/10.1063/1.106144 (3 pages) | Cited 15 times

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Large optically induced Stark shifts have been observed in a periodically δ‐doped InGaAs/GaAs multiple quantum well structure. With an excitation intensity of 10 mW/cm2 we have measured an absolute quantum well absorption change of 7000 cm−1 with a corresponding differential absorption change as high as 80%. The associated maximum change in the quantum well refractive index is 0.04. This material is promising for device development for all‐optical computing and signal processing.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.20.Jq Electro-optical effects
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Hp Optical processors, correlators, and modulators

Thermochemistry on a fluorinated diamond (111) surface

Stephen J. Harris and David N. Belton

Appl. Phys. Lett. 59, 1949 (1991); http://dx.doi.org/10.1063/1.106145 (3 pages) | Cited 13 times

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We have performed calculations to evaluate mechanisms for growth of diamond on fluorinated diamond surfaces. These surfaces are very hard and have excellent tribological properties. Our calculations show that steric repulsion between neighboring F atoms on the fully fluorinated surface studied is small, which−given the strength of C—F bonds−implies that this surface should be chemically very stable. Our analysis also shows that in the absence of hydrogen, growth of diamond on a fluorinated surface is thermodynamically so unfavorable that it will not occur. Finally, diamond growth on fluorinated surfaces could be quite favorable in the presence of hydrogen and hydrocarbons.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
82.30.Nr Association, addition, insertion, cluster formation
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

In situ observation of phase transition in potassium niobate single crystal by synchrotron radiation topography

Jiyong Zhao, Ping Yang, Shusheng Jiang, Xiaoming Jiang, Jianhua Jiang, Dingchang Xian, Zhaohua Geng, and Qun Zou

Appl. Phys. Lett. 59, 1952 (1991); http://dx.doi.org/10.1063/1.106146 (2 pages) | Cited 4 times

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The structure of domains and their evolution with temperature in potassium niobate (KNbO3) single crystals were studied by synchrotron radiation topography at Beijing Synchrotron Radiation Laboratory. The 90° domain disappears after the phase transition at about 224 °C, while the 60° (or 120°) domain still exists in the specimen.
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64.70.K- Solid-solid transitions
77.80.B- Phase transitions and Curie point
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Optical glow spectra arising from low‐energy N2, N+2 and electron bombardment of MgF2 surfaces

J. Qi, A. V. Barnes, S. L. Espy, M. Riehl‐Chudoba, C‐N. Sun, R. G. Albridge, and N. H. Tolk

Appl. Phys. Lett. 59, 1954 (1991); http://dx.doi.org/10.1063/1.106147 (3 pages) | Cited 1 time

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Photon emission spectra resulting from the impact of N2, N+2, and electron beams on magnesium fluoride in an ultrahigh vacuum environment were measured and compared for beam energies in the range of 200–2000 eV. Unexpectedly, only the ion‐ and electron‐induced spectra exhibited broad fluorescence. The observed data suggest that the broad fluorescence arising from low‐energy ion bombardment is due primarily to the transfer of electronic energy to the surface by resonance or Auger neutralization. Since molecular nitrogen is a major constituent of the atmosphere at orbital altitudes, these measurements bear directly on radiation‐induced glow and erosion processes on surfaces of spacecraft in low‐earth orbit.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
81.65.-b Surface treatments
78.60.Hk Cathodoluminescence, ionoluminescence

Influence of the composition modulation on the relaxation of In0.54Ga0.46As strained layers

F. Peiró, A. Cornet, J. R. Morante, S. Clark, and R. H. Williams

Appl. Phys. Lett. 59, 1957 (1991); http://dx.doi.org/10.1063/1.106148 (3 pages) | Cited 17 times

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TEM observation of In0.54Ga0.46As grown by MBE on InP shows a coarse tweed quasiperiodic structure related with a composition modulation. The period Λ of this modulation has been found to be dependent on the layer thickness. The elastic energy associated with the modulation induced strain, has been taken into account to explain this period dependence. The evolution of strain parallel to growth surface with epilayer thickness has been correlated with both the change on the modulation period and the presence of defects.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Observation of misfit dislocations in epitaxial CoSi2/Si (111) layers by scanning tunneling microscopy

Roland Stalder, Henning Sirringhaus, Nico Onda, and Hans von Känel

Appl. Phys. Lett. 59, 1960 (1991); http://dx.doi.org/10.1063/1.106149 (3 pages) | Cited 43 times

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The surfaces of epitaxial CoSi2 layers grown on Si(111) have been examined by scanning tunneling microscopy (STM) in ultrahigh vacuum. The onset of strain relaxation above the critical thickness of about 40 Å has been monitored by STM for the first time. This relaxation takes place by the formation of a honeycomb network of partial dislocations lying in the interface plane. An associated network of protruding lines has been detected in STM topographs for film thicknesses up to 104 Å. The topographic cross sections perpendicular to the lines are found to have a Lorentzian shape with a height of 0.6 Å and a half‐width equal to the layer thickness. Our analysis suggests that similar effects should be observable for a wider class of heteroepitaxial systems.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
68.35.Dv Composition, segregation; defects and impurities

Tunneling and subband levels in GaAs quantum well with direct and indirect AlxGa1−xAs barriers

Vasu Sankaran and Jasprit Singh

Appl. Phys. Lett. 59, 1963 (1991); http://dx.doi.org/10.1063/1.106150 (3 pages) | Cited 3 times

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We present a study of coherent tunneling lifetimes for quasibound electrons confined in a GaAs quantum well by Al0.3Ga0.7As (direct band gap) and AlAs (indirect band gap) barriers, using the tight‐binding representation for the electronic states in an eight‐element (sp3) basis, and solving the time‐dependent Schrödinger equation using a unitary approximation of the evolution operator. The dependence of the lifetime on barrier thickness is found to fit a WKB‐type expression very well. Although simple effective mass theory is not applicable, the barrier thickness coefficient in the WKB exponent is determined by the Γ‐point band extrema even for indirect AlAs barriers with X‐point conduction‐band minimum. The dependence of the subband energies and their in‐plane dispersion on the mole fraction x of Al in the AlxGa1−xAs barrier is also presented, for x in the range 0.2–1.
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73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Ey III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Electron‐state lifetimes in submicron diameter resonant tunneling diodes

M. Tewordt, D. A. Ritchie, R. T. Syme, M. J. Kelly, V. J. Law, R. Newbury, M. Pepper, J. E. F. Frost, G. A. C. Jones, and W. M. Stobbs

Appl. Phys. Lett. 59, 1966 (1991); http://dx.doi.org/10.1063/1.106151 (3 pages) | Cited 16 times

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We have investigated the lifetimes of electron states in the quantum wells of GaAs‐AlGaAs resonant tunneling diodes with diameters down to 200 nm, as a function of the barrier thickness. The times were extracted from the magnitude of steps observed in the current‐voltage characteristics, a quantum effect which reflects the quasi‐one‐dimensional electron transport in these devices. We find very good agreement between the experimental lifetimes, and those calculated using data from transmission electron microscopy. It is also shown that the total scattering time does not correlate with the barrier thickness and is much smaller than the electron‐state lifetime.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Gk Tunneling
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Infrared intersubband photoinduced charge polarization in asymmetrical quantum wells

B. F. Levine, S. D. Gunapala, and M. Hong

Appl. Phys. Lett. 59, 1969 (1991); http://dx.doi.org/10.1063/1.106152 (3 pages) | Cited 5 times

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We have studied the long‐wavelength photoinduced charge polarization and electron storage produced by infrared intersubband absorption in highly asymmetrical graded quantum wells. At zero bias a large photovoltage is observed, while at high bias the charge transfer probability approaches unity.
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72.40.+w Photoconduction and photovoltaic effects
73.50.Pz Photoconduction and photovoltaic effects
78.30.Fs III-V and II-VI semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Trap‐enhanced electric fields in semi‐insulators: The role of electrical and optical carrier injection

Stephen E. Ralph and D. Grischkowsky

Appl. Phys. Lett. 59, 1972 (1991); http://dx.doi.org/10.1063/1.106153 (3 pages) | Cited 70 times

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We report extremely large field enhancement near the anode of an electrically biased metal/semi‐insulator/metal structure. The large anode field results from a trap‐enhanced space‐charge region and is large enough to cause injection of holes at the anode. Our numerical simulations confirm this interpretation and show that for typical semi‐insulating GaAs, large trap‐enhanced fields (TEF) are to be expected. The TEF effect, contrary to that observed in doped materials, is enhanced by optical injection of carriers near the anode, and can be exploited for the efficient generation of ultrafast THz radiation.
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85.30.Kk Junction diodes
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Ey III-V and II-VI semiconductors

GaAs/AlGaAs quantum well and modulation‐doped heterostructures grown by organometallic vapor phase epitaxy using trimethylamine alane

W. S. Hobson, F. Ren, M. Lamont Schnoes, S. K. Sputz, T. D. Harris, S. J. Pearton, C. R. Abernathy, and K. S. Jones

Appl. Phys. Lett. 59, 1975 (1991); http://dx.doi.org/10.1063/1.106154 (3 pages) | Cited 7 times

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High‐quality GaAs/AlGaAs quantum well and modulation‐doped heterostructures have been grown by low‐pressure organometallic vapor phase epitaxy (OMVPE) using trimethylamine alane (TMAA) as a new aluminum source. TMAA is an alternative to the conventional organometallic precursors and offers the advantage of substantially reduced oxygen and carbon incorporation in AlGaAs. Intense photoluminescence (PL) with narrow linewidths at 2 K was observed from multiple quantum well samples with well widths of 1.5–10 nm. Transmission electron microscopy of a fifty period superlattice (4 nm GaAs/44 nm Al0.18Ga0.82As) revealed abrupt interfaces and excellent well‐to‐well thickness uniformity. Selectively doped heterostructure transistors (SDHTs) fabricated on the modulation‐doped structures exhibited a maximum extrinsic transconductance of 339 mS/mm for a 1‐μm‐gate length at 300‐K, the highest reported for OMVPE grown devices. A unity current gain cutoff frequency, ft, of 16 GHz and a maximum frequency of oscillation, fmax, of 23 GHz were obtained for these SDHTs.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.55.Cr III-V semiconductors
85.30.Tv Field effect devices
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Antireflection coatings for advanced semiconductor device metallization using laser reflow and chemical mechanical planarization

C. Yu, G. S. Sandhu, and T. T. Doan

Appl. Phys. Lett. 59, 1978 (1991); http://dx.doi.org/10.1063/1.106155 (3 pages) | Cited 3 times

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We have investigated titanium tungsten (TiW), titanium nitride (TiN), and chemical vapor deposited (CVD) tungsten (W) films as antireflection coatings (ARC) on aluminum (Al) alloy films to widen the laser planarization process window for contact via filling. ARCs lowered the minimum laser fluence required to accomplish complete contact filling and the maximum laser fluence before the onset of optical ablation, resulting in a significant increase in the process window. This increase closely correlated with the optical and thermal properties of the ARCs. The observed increase in resistivity of laser processed Al films due to intermixing with the ARCs does not preclude its use as via stud metal. A newly developed Al plug technology utilizing chemical mechanical polishing to remove the laser processed film from the surface is presented.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Lt Gas lasers including excimer and metal-vapor lasers
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Arsenic pressure variations during oxide desorption from gallium arsenide prior to epitaxial deposition

A. J. SpringThorpe, A. Majeed, and A. D. Priest

Appl. Phys. Lett. 59, 1981 (1991); http://dx.doi.org/10.1063/1.106156 (3 pages) | Cited 2 times

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Prior to epitaxial deposition of gallium arsenide by molecular beam epitaxy it is necessary to remove surface oxide films in situ. Changes in the system pressure can be measured during the desorption process. The largest pressure changes are found for ion gauges that can directly measure the flux of arsenic atoms that are reflected or scattered from the substrate surface. It is found that there is a reproducible drop in apparent pressure of ∼25% as the oxide is desorbed, which is independent of whether an As2 or As4 overpressure is used to stabilize the surface. There are, however, qualitative differences between the two arsenic species, which can be attributed to the way they interact with the GaAs surface. Nevertheless, the pressure changes correlate precisely with the oxide removal, and they provide a reproducible monitoring tool for the calibration of substrate temperatures and the establishment of appropriate epitaxial growth conditions.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
81.65.-b Surface treatments

375‐GHz‐bandwidth photoconductive detector

Yi Chen, Steven Williamson, Tim Brock, F. W. Smith, and A. R. Calawa

Appl. Phys. Lett. 59, 1984 (1991); http://dx.doi.org/10.1063/1.106157 (3 pages) | Cited 66 times

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We report the development of a new, integrable photoconductive detector, based on low‐temperature‐grown GaAs, that has a response time of 1.2 ps and a 3‐dB bandwidth of 375 GHz. The responsivity is 0.1 A/W. Signal amplitudes up to 6 V can be produced with virtually no degradation in response time.
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85.60.Gz Photodetectors (including infrared and CCD detectors)

Operation of a single quantum well heterojunction field‐effect photodetector

S. K. Sargood, G. W. Taylor, T. Vang, P. Cooke, C. A. Burrus, B. Tell, and K. Brown‐Goebeler

Appl. Phys. Lett. 59, 1987 (1991); http://dx.doi.org/10.1063/1.106158 (3 pages) | Cited 2 times

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The single quantum well heterojunction field‐effect photodetector is demonstrated for the first time as a GHz bandwidth waveguide heterostructure, and as the optoelectronic counterpart to the single quantum well heterojunction field‐effect transistor. For a 1 μm gate‐length device a responsivity of 0.16 A/W, external quantum efficiency of 0.35, and test‐laser limited rise time of 100 ps are obtained.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.30.Tv Field effect devices
42.79.Gn Optical waveguides and couplers

Copper indium diselenide based thin‐film transistors

J. Lai, L. Cai, and D. L. Morel

Appl. Phys. Lett. 59, 1990 (1991); http://dx.doi.org/10.1063/1.106159 (2 pages) | Cited 2 times

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Thin‐film transistors have been fabricated with the compound semiconductor CuInSe2. The fabrication process uses soda‐lime glass substrates and deposition conditions for CuInSe2 which result in near‐intrinsic material. The devices are of the insulated‐gate field‐effect transistor configuration and operate in both p‐ and n‐channel modes. Effective mobilities of 3.4 and 13 cm2/V s were measured for holes and electrons, respectively, indicating high potential for use of the technology in display applications.
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85.30.Tv Field effect devices
85.60.-q Optoelectronic devices
85.60.Pg Display systems
78.66.-w Optical properties of specific thin films

Photocurrent multiplication in amorphous silicon carbide films

Masahiro Hiramoto, Kanji Yoshimura, Yoshikazu Nakayama, Seiji Akita, Takao Kawamura, and Masaaki Yokoyama

Appl. Phys. Lett. 59, 1992 (1991); http://dx.doi.org/10.1063/1.106160 (3 pages) | Cited 15 times

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The photocurrent multiplication reaching 300 times was recently observed in amorphous silicon carbide (a‐SiC:H) films using a simple cell configuration of SnO2/a‐SiC:H/Au. This phenomenon, which appeared only under the irradiation of bulk‐absorbed red light, is not due to Avalanche effects, but is thought to result from electron tunneling from SnO2 to a‐SiC:H film through a thin insulating thin silicon oxide layer formed at the a‐SiC:H/SnO2 interface in a high electric field built up by the photoaccumulated space charges of trapped holes near the interface.
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73.50.Pz Photoconduction and photovoltaic effects
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.50.Fq High-field and nonlinear effects
73.61.Ng Insulators
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