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28 Oct 1991

Volume 59, Issue 18, pp. 2207-2336

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Infrared radiation generated by quasi‐phase‐matched difference‐frequency mixing in a periodically poled lithium niobate waveguide

E. J. Lim, H. M. Hertz, M. L. Bortz, and M. M. Fejer

Appl. Phys. Lett. 59, 2207 (1991); http://dx.doi.org/10.1063/1.106071 (3 pages) | Cited 20 times

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We report quasi‐phase‐matched difference‐frequency generation of 2.1 μm radiation at room temperature using the d33 nonlinear coefficient in a periodically poled lithium niobate channel waveguide. A tunable Ti:Al2O3 laser (λ≊0.8 μm) and a Nd:YAG laser (λ=1.32 μm) were the pump and signal sources, respectively. With 160 mW of 0.81 μm and 1 mW of 1.32 μm radiation coupled into the waveguide, 1.8 μW of 2.1 μm radiation was generated, tunable over a 6 nm bandwidth. We also show that the annealed proton exchange process can change the shape of ferroelectric domains in lithium niobate.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics

High power, high efficiency antiguide laser arrays

J. S. Major, D. Mehuys, D. F. Welch, and D. R. Scifres

Appl. Phys. Lett. 59, 2210 (1991); http://dx.doi.org/10.1063/1.106072 (3 pages) | Cited 7 times

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An antiguide laser diode array has been fabricated which radiates a predominantly single lobe far field with a full‐width at half‐maximum of 1.5 times the diffraction limit at a continuous wave output power of 500 mW with a differential quantum efficiency of 50%. By spectrally resolving the far field of the device at high operating powers it is shown that the two longitudinal modes correspond to adjacent lateral modes of the array. The operation of the second lateral mode is the result of spatial hole‐burning of the first optical mode.
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42.55.Px Semiconductor lasers; laser diodes
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Chemical imidization for enhanced thermal stability of poled electro‐optic response in polyimide guest‐host systems

J. W. Wu, J. F. Valley, S. Ermer, E. S. Binkley, J. T. Kenney, and R. Lytel

Appl. Phys. Lett. 59, 2213 (1991); http://dx.doi.org/10.1063/1.106073 (3 pages) | Cited 16 times

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Chemical imidization at room temperature is employed as a novel curing process for dc electric field poled electro‐optic (EO) polyimide guest‐host systems. Dehydration occurring through imidization of the polyamic acid is completed chemically after poling rather than thermally during poling. After thermal aging at 155 °C (above the poling temperature) chemically imidized samples retain over 30% of their original poling induced EO signal while similarly poled samples, which have not been chemically imidized, produce a null EO response.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
78.66.Qn Polymers; organic compounds
78.20.Jq Electro-optical effects
42.82.-m Integrated optics

Narrow linewidth, continuously tunable semiconductor lasers based on quantum well gain lever

Kam Y. Lau

Appl. Phys. Lett. 59, 2216 (1991); http://dx.doi.org/10.1063/1.106074 (3 pages)

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The tradeoff between linewidth and tuning range for multisection distribution Bragg reflector lasers is studied. It is shown that the quantum well gain‐lever effect can be utilized in removing some of the tradeoff constraints, thereby making possible a broadly and continuously tunable semiconductor laser which can maintain a narrow linewidth over its tuning range.
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42.55.Px Semiconductor lasers; laser diodes
85.60.Dw Photodiodes; phototransistors; photoresistors

Nonlinear optical study of quasi‐one‐dimensional platinum complexes: Two‐photon excitonic resonance effect

Y. Iwasa, E. Funatsu, T. Hasegawa, T. Koda, and M. Yamashita

Appl. Phys. Lett. 59, 2219 (1991); http://dx.doi.org/10.1063/1.106075 (3 pages) | Cited 29 times

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Third‐harmonic generation measurements have been made for the first time on oriented films of halogen‐bridged mixed‐valence platinum complexes for the pump wavelength region from 0.6 to 1.0 μm. The ‖χ(3)(−3ω;ω,ω,ω)‖ spectra obtained by the Maker’s fringe method show a distinct peak at about 1.8 eV with the peak value of about 4×10−11 esu. From comparison with the electroabsorption data, this peak has been identified with the two‐photon resonance peak with the forbidden exciton in the Pt‐halogen chains. One‐dimensional exciton states in this compound take an important role in the third‐order optical nonlinearity, similar to the case in conjugated polymers.
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78.66.Qn Polymers; organic compounds
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.Jq Electro-optical effects
71.35.-y Excitons and related phenomena

Optically activated integrated optic Mach–Zehnder interferometer on GaAs

Z. Y. Cheng and C. S. Tsai

Appl. Phys. Lett. 59, 2222 (1991); http://dx.doi.org/10.1063/1.106076 (3 pages) | Cited 4 times

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An optically activated guided‐wave Mach–Zehnder interferometer has been constructed and used to study photoinduced phase modulation in GaAs channel waveguides. A π radian phase shift at the optical wavelength of 1.15 μm has been achieved with modulating pulse energy of 320 pJ at an interaction length of 22 μm. Our experiment also indicates that for infrared (IR) light with photon energy far below the band‐gap energy of the semiconductor material, the free carrier‐induced refractive index changes are much more significant than the free carrier‐induced absorption changes.
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42.82.-m Integrated optics
42.79.Hp Optical processors, correlators, and modulators

Vertically stacked multiple‐quantum‐wire semiconductor diode lasers

S. Simhony, E. Kapon, E. Colas, D. M. Hwang, N. G. Stoffel, and P. Worland

Appl. Phys. Lett. 59, 2225 (1991); http://dx.doi.org/10.1063/1.106077 (3 pages) | Cited 40 times

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We report the structure and lasing characteristics of GaAs/AlGaAs vertically stacked multiple‐quantum‐wire (QWR) semiconductor lasers grown by organometallic chemical vapor deposition on V‐grooved substrates. The active region in these lasers consists of three crescent‐shaped wires, placed at the center of a single‐mode optical waveguide. The higher optical confinement factor, compared to single‐QWR structures, leads to reduced threshold currents, as low as 0.6 mA for high‐reflection coated devices at room temperature. The lower threshold carrier density results in oscillation at a lower QWR subband as compared to single‐QWR laser structures.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
85.60.Jb Light-emitting devices

Direct observation of the pressure developed in a liquid during cavitation‐bubble collapse

B. Ward and D. C. Emmony

Appl. Phys. Lett. 59, 2228 (1991); http://dx.doi.org/10.1063/1.106078 (3 pages) | Cited 21 times

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A Mach–Zehnder interferometer with a pulsed dye‐laser light source is used to observe the collapse of laser‐produced cavitation bubbles in water near a rigid transparent polymeric boundary. Vapor bubbles with a maximum radius of about a millimeter are formed using a Q‐switched Nd:YAG laser operating at 1.06 μm with a pulse energy of 4.6 mJ and a pulse duration of 8 ns. The pressure in the liquid around the bubbles is determined directly from the resulting interferograms using a fringe tracing method. Prior to bubble rebound, a region of compressed water develops adjacent to the cavity and a weak acoustic wave is directed towards the rigid boundary.
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47.55.dp Cavitation and boiling
79.20.Ds Laser-beam impact phenomena

Observations of hollow cathode light emission from a transient hollow cathode discharge

E. Wyndham, H. Chuaqui, M. Favre, and P. Choi

Appl. Phys. Lett. 59, 2231 (1991); http://dx.doi.org/10.1063/1.106079 (3 pages) | Cited 4 times

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Experimental observations are presented on the light emission from the hollow cathode region of a pulsed hollow cathode discharge. A 2 mJ, 30 ns, 1.06 μm laser pulse incident on the back of the cathode is used to trigger the discharge. The temporal evolution of the light emission from this region is recorded in 50 nm spectral bands. Comparisons are made with the laser applied before and after the application of voltage across the discharge chamber. Clear experimental evidence is found of the importance of a transient volume hollow cathode process prior to gas breakdown in the main discharge region.
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52.80.Vp Discharge in vacuum
79.20.Ds Laser-beam impact phenomena
42.81.Dp Propagation, scattering, and losses; solitons

Wave propagation and damping in an electron cyclotron resonance plasma reactor

Shoji Miyake, Wei Chen, and Yoshinobu Kawai

Appl. Phys. Lett. 59, 2234 (1991); http://dx.doi.org/10.1063/1.106080 (3 pages) | Cited 1 time

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Propagation and damping of 2.45 GHz input microwaves in an electron cyclotron resonance (ECR) hydrogen plasma reactor were measured in a mirror magnetic field. Without plasma production the wave propagated in the chamber with a wavelength nearly equal to the one in a vacuum. When the hydrogen plasma was sustained at a pressure of 3.3×10−1 Pa, the wavelength was shortened to several cm and the wave was strongly damped near the resonance zone in the axial direction where the electron temperature as well as the plasma density indicated maximum values. The experimental result approximately agreed with the cold plasma dispersion relation for an electron cyclotron wave.
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52.50.Dg Plasma sources

Optical study of microvoids, voids, and local inhomogeneities in amorphous silicon

M. Vanecek, J. Holoubek, and A. Shah

Appl. Phys. Lett. 59, 2237 (1991); http://dx.doi.org/10.1063/1.106081 (3 pages) | Cited 11 times

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Elastic light scattering has been used for a study of microstructure in amorphous hydrogenated silicon. A simple theory to get quantitative informations on the microstructure has been presented for the first time, both for Rayleigh and Mie scattering. For optimal very high frequency glow discharge amorphous silicon layers, the presence of voids with diameter between 1 and 20 nm is typical.
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78.35.+c Brillouin and Rayleigh scattering; other light scattering
78.66.-w Optical properties of specific thin films
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Involvement of the topmost Ge layer in the Ge surface segregation during Si/Ge heterostructure formation

K. Fujita, S. Fukatsu, H. Yaguchi, Y. Shiraki, and R. Ito

Appl. Phys. Lett. 59, 2240 (1991); http://dx.doi.org/10.1063/1.106082 (2 pages) | Cited 32 times

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Surface segregation of Ge atoms during Si/Ge heterostructure formation by molecular beam epitaxy has been investigated by x‐ray photoemission spectroscopy varying the Ge layer thickness. It has been found that only the Ge atoms of the topmost layer are involved in the surface segregation, leaving the rest of the Ge atoms intact. This result supports the basic idea of the two‐state‐exchange model.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.65.-b Surface treatments

Strain relaxation and ordering in SiGe layers grown on (100), (111), and (110) Si surfaces by molecular‐beam epitaxy

T. S. Kuan and S. S. Iyer

Appl. Phys. Lett. 59, 2242 (1991); http://dx.doi.org/10.1063/1.106083 (3 pages) | Cited 47 times

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Si0.5Ge0.5/Si superlattices and thick Si0.5Ge0.5 layers grown on (100), (111), and (110) Si surfaces by molecular‐beam epitaxy (MBE) exhibit different growth morphologies and defect structures. The best morphology is achieved on (100) surfaces at low temperatures (∼400 °C), while thin and defect‐free SiGe layers grown at higher temperatures (∼600 °C) tend to exhibit undulated surfaces due to the mismatch strain. Strained SiGe layers grown on (111) and (110) surfaces are much more susceptible to twin formation. SiGe layers grown on (100) surfaces at low temperatures exhibit a long‐range order along the 〈111〉 directions. Our results indicate that such ordering occurs only in thick and relaxed SiGe layers but not in thin SiGe layers strained in a SiGe/Si superlattice structure. No ordering was observed in SiGe layers grown on (111) and (110) surfaces.
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68.60.Bs Mechanical and acoustical properties
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.55.-a Thin film structure and morphology

Self‐consistent model for two‐dimensional accumulation layer states in resonant tunneling devices

Thomas Fiig and A. P. Jauho

Appl. Phys. Lett. 59, 2245 (1991); http://dx.doi.org/10.1063/1.106084 (3 pages) | Cited 9 times

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We present a simple model which allows a simultaneous and self‐consistent treatment of extended and size‐quantized states in biased double‐barrier systems. Our model preserves charge neutrality in the asymptotic regions, and the self‐consistent charge density is free of unphysical cusps, found in simple screening models. We discuss the implications of the 2D emitter states to the current‐voltage characteristics.
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73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Ey III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Effect of hydrogenation on hole intersubband absorption in δ‐doped Si layers

V. Arbet‐Engels, K. L. Wang, R. P. G. Karunasiri, and J. S. Park

Appl. Phys. Lett. 59, 2248 (1991); http://dx.doi.org/10.1063/1.106085 (3 pages) | Cited 3 times

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The effect of hydrogen passivation on the intersubband absorption in δ‐doped multiple Si layers is studied. The passivation is carried out using a dc plasma of hydrogen in a quartz reactor. Fourier transform infrared spectroscopy is used to measure the absorption spectra and the effectiveness of the passivation of boron acceptors. The intersubband absorption intensity is reduced considerably upon H passivation and the effectiveness of the hydrogenation is a function of the boron concentration in the δ layers and the duration of the exposition to the H plasma. A resonance peak at 1870 cm−1 is observed after passivation, characteristics of a boron‐hydrogen complex. After annealing the samples in nitrogen at sufficiently high temperature, the absorption intensity recovers nearly to its initial value and the process of hydrogenation is reversed. The activation energy of the dissociation of the boron‐hydrogen complex is calculated and found to be 1.9±0.1 eV, in reasonable agreement with the B‐H complex dissociation energy in bulk Si.
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78.30.Hv Other nonmetallic inorganics
81.40.Tv Optical and dielectric properties related to treatment conditions
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxy

N. Yoshimoto, T. Matsuoka, T. Sasaki, and A. Katsui

Appl. Phys. Lett. 59, 2251 (1991); http://dx.doi.org/10.1063/1.106086 (3 pages) | Cited 77 times

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InGaN single‐crystal films were grown on (0001) plane sapphire substrates at 800 °C by metalorganic vapor phase epitaxy. By using such a high temperature for growth, the crystalline quality has been greatly improved. But a high nitrogen over pressure and high indium source flow rate were necessary to achieve significant indium incorporation during growth. For the first time, photoluminescence has been observed in InGaN, and near‐band edge emission is seen in the photoluminescence at 77 K. From this photoluminescence, the dependence of a near‐band edge emission on the indium mole fraction of InGaN has been investigated.
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78.55.Cr III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Molecular‐beam‐epitaxy‐deposited nonalloyed Al contacts to n‐type and p‐type InGaAs

T. C. Shen, Z. F. Fan, G. B. Gao, H. Morkoç, and A. Rockett

Appl. Phys. Lett. 59, 2254 (1991); http://dx.doi.org/10.1063/1.106087 (3 pages) | Cited 3 times

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Nonalloyed Al contacts were deposited by molecular beam epitaxy on both n‐ and p‐type In0.53Ga0.47As layers prior to air exposure. These were shown to be ohmic, with specific contact resistances in the range of mid μΩ cm2 by the transmission‐line model method. The thermal stability of these contacts was tested by annealing at temperatures between 350 and 450 °C for 30 min and at 300 °C for 500 h. Both experiments showed stable specific contact resistances.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.30.+y Surface double layers, Schottky barriers, and work functions
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Spectrum of hot‐electron luminescence from high electron mobility transistors

Hans P. Zappe and D. J. As

Appl. Phys. Lett. 59, 2257 (1991); http://dx.doi.org/10.1063/1.106089 (3 pages) | Cited 8 times

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GaAs and InGaAs high electron mobility transistors (HEMTs) have been found to emit visible and infrared radiation when subject to high drain/source biases. This luminescence has been studied and analyzed spectrally; there appear to be components due to electron indirect intraband transitions, in addition to recombination in various layers of the HEMT. The distinct recombination peaks indicate that carriers are distributed vertically in the transistor; the relative strength of luminescence at particular energies may provide indications of the relative carrier densities. This electroluminescence spectrum strongly suggests that real‐space transfer may be significant in HEMTs.
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78.60.Fi Electroluminescence
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
85.30.Tv Field effect devices

Nitrogen‐oxygen complexes in silicon studied by photothermal ionization spectroscopy

C. M. Hu, Y. X. Huang, H. J. Ye, S. C. Shen, and M. W. Qi

Appl. Phys. Lett. 59, 2260 (1991); http://dx.doi.org/10.1063/1.106090 (3 pages) | Cited 5 times

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High‐resolution photothermal ionization spectroscopy has been performed on silicon grown in a nitrogen environment by the Czochralski technique for the first time. Three shallow donors related to the complexes of nitrogen and oxygen impurities D(N‐O‐3), D(N‐O‐4), and D(N‐O‐5) have been observed. Previously unresolved transitions related to the excited states higher than 3p± for D(N‐O)s are observed in the spectra as well. The ionization energies of D(N‐O)s have been accurately determined as 36.16, 36.41, and 37.37 meV, respectively. In addition, two previously unidentified donor levels found in the absorption spectra of silicon crystal involving nitrogen and oxygen are identified as originating from the splitting of the ground state of phosphorus.
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71.55.Ht Other nonmetals
72.40.+w Photoconduction and photovoltaic effects
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Carbon acceptor incorporation in GaAs grown by metalorganic chemical vapor deposition: Arsine versus tertiarybutylarsine

S. P. Watkins and G. Haacke

Appl. Phys. Lett. 59, 2263 (1991); http://dx.doi.org/10.1063/1.106064 (3 pages) | Cited 16 times

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Undoped p‐type GaAs epilayers were grown by low‐pressure metalorganic chemical vapor deposition (MOCVD) at 650 °C and 76 Torr using either arsine or tertiarybutylarsine (TBA), and trimethylgallium (TMG). Extremely high‐purity precursors were used in order to eliminate extrinsic doping effects. Carbon acceptors from the TMG were the dominant residual electrical impurities under all growth conditions. Temperature‐dependent Hall measurements were used to make a quantitative comparison of the carbon acceptor concentrations for arsine‐ and TBA‐grown epilayers over a range of As partial pressures. For a given group V partial pressure, we report a significant reduction in carbon acceptor incorporation using TBA compared with arsine under identical growth conditions.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.61.Ey III-V semiconductors
78.55.Cr III-V semiconductors

Preparation of oriented silicon carbide films by laser ablation of ceramic silicon carbide targets

L. Rimai, R. Ager, E. M. Logothetis, W. H. Weber, and J. Hangas

Appl. Phys. Lett. 59, 2266 (1991); http://dx.doi.org/10.1063/1.106065 (3 pages) | Cited 26 times

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Stoichiometric films of SiC, 60–150 nm thick, were deposited on [001] and [111] Si wafers by laser ablation of ceramic stoichiometric SiC targets. Films grown at substrate temperatures above 1050 °C show orientation epitaxial to the Si substrate along the film normal. Depending on the deposition conditions, the oriented crystallite dimension along this direction ranges from 20 nm up to the film thickness. The crystallite dimensions in the film plane range from 20 to 70 nm. Raman spectra indicate that the films often contain material other than crystalline SiC. Some of that is in the form of small (3–5 nm) graphitic inclusions.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.30.Hv Other nonmetallic inorganics

Determination of epitaxial AlxGa1−xAs composition from x‐ray diffraction measurements

M. S. Goorsky, T. F. Kuech, M. A. Tischler, and R. M. Potemski

Appl. Phys. Lett. 59, 2269 (1991); http://dx.doi.org/10.1063/1.106040 (3 pages) | Cited 35 times

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The correlation between the aluminum composition in epitaxial AlxGa1−xAs and double crystal x‐ray diffraction measurements was quantitatively determined. The angular separation ΔΘ, between the diffraction peaks from the AlxGa1−xAs layer grown by metalorganic vapor phase epitaxy and the GaAs substrate increased nonlinearly with the Al content, which was independently determined using photoluminescence and electron microprobe measurements. The calibration curve was used to determine AlAs materials parameters. The AlAs lattice constant and Poisson ratio were determined to be 5.6622 Å and 0.275, respectively, assuming that the GaAs parameters are 5.65325 Å and 0.311.
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68.55.Nq Composition and phase identification
81.65.-b Surface treatments
78.55.Cr III-V semiconductors
61.05.cf X-ray scattering (including small-angle scattering)
61.05.cj X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.

Measurement of aluminum concentration in epitaxial layers of AlxGa1−xAs on GaAs by double axis x‐ray diffractometry

B. K. Tanner, A. G. Turnbull, C. R. Stanley, A. H. Kean, and M. McElhinney

Appl. Phys. Lett. 59, 2272 (1991); http://dx.doi.org/10.1063/1.106041 (3 pages) | Cited 38 times

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The composition of a series of AlxGa1−xAs layers grown epitaxially by molecular beam epitaxy (MBE) on GaAs has been measured independently by double axis x‐ray diffractometry and reflection high‐energy electron diffraction. From a quadratic fit to the data, we deduce the lattice parameter mismatch between AlAs and GaAs and the Poisson ratio of AlAs. Asymmetric reflection rocking curves and synchrotron x‐ray topography have been used to show that the anomalously low substrate‐layer peak splitting for the 1‐μm‐thick AlAs layer results from relaxation, which is asymmetric. Use of the AlAs rocking curve peak splitting corrected for relaxation yields a mismatch of 1600 ppm (±1%) between AlAs and GaAs, and 0.28±0.01 for the Poisson ratio of AlAs.
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68.55.Nq Composition and phase identification
61.05.cf X-ray scattering (including small-angle scattering)
61.05.cj X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Ultraviolet radiation induced defect creation in buried SiO2 layers

R. A. B. Devine, J‐L. Leray, and J. Margail

Appl. Phys. Lett. 59, 2275 (1991); http://dx.doi.org/10.1063/1.106042 (3 pages) | Cited 30 times

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The creation of oxygen‐vacancy defects in amorphous SiO2 films produced by O+ implantation and annealing has been studied using radiation from a microwave excited Kr plasma. Photons having λ≤125 nm are found to create saturation densities ∼1.3×1019 cm−3 whereas for λ≥ (R18)200 nm the saturation density is ∼3.4×1017 cm−3. It is argued that simultaneous defect creation and annihilation may occur for long wavelength, sub‐band‐gap energy photons. Strongly enhanced defect creation (≤970 times) is observed as compared to bulk, amorphous SiO2 in the form of Suprasil 1 plate. It is suggested that this may be due to H sensitization of the defect precursors (O3≡Si—Si≡O3).
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61.43.Fs Glasses
61.43.-j Disordered solids
61.44.Br Quasicrystals
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
73.40.Ty Semiconductor-insulator-semiconductor structures

Method for measuring diffusion of moisture in polyimide

Li‐Hsin Chang and Harland Tompkins

Appl. Phys. Lett. 59, 2278 (1991); http://dx.doi.org/10.1063/1.106410 (3 pages) | Cited 1 time

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A method of easily measuring the diffusion coefficient for the diffusion of moisture in polyimide is proposed. A polyimide film which is sandwiched between a silicon wafer and a metal film is exposed at the edge to moisture for various lengths of time. The progression of the diffusion process is delineated by placing the sample on a hot plate at about 350 °C. The pressure of the moisture causes the metal film to bubble. Diffusion coefficients are calculated for two different forms of polyimide.
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68.35.Fx Diffusion; interface formation
66.30.Ny Chemical interdiffusion; diffusion barriers
68.60.Wm Other nonelectronic physical properties
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