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28 Oct 1991

Volume 59, Issue 18, pp. 2207-2336

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Electron‐paramagnetic‐resonance study of the isolated arsenic antisite in electron irradiated GaAs and its relation to the EL2 center

F. C. Rong, W. R. Buchwald, M. Harmatz, E. H. Poindexter, and W. L. Warren

Appl. Phys. Lett. 59, 2281 (1991); http://dx.doi.org/10.1063/1.106043 (3 pages) | Cited 2 times

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Arsenic antisites produced in GaAs by room‐temperature electron irradiation (RTEI) are examined by electron paramagnetic resonance (EPR). For the first time, this RTEI antisite, which has been believed to be the isolated antisite, is found to be metastable. The most efficient photon energy for photoquenching is found to be approximately 1.15 eV, which is very close to that observed for the well‐known EL2 center in undoped semi‐insulating GaAs. However, the thermal recovery temperature is about 200–250 K, much higher than that for the EL2 center.
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76.30.Lh Other ions and impurities
61.80.Fe Electron and positron radiation effects

Si and GaAs dry etching utilizing showered electron‐beam assisted etching through Cl2 gas

S. Matsui and H. Watanabe

Appl. Phys. Lett. 59, 2284 (1991); http://dx.doi.org/10.1063/1.106044 (3 pages) | Cited 5 times

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Electron‐beam (EB) dry etching for Si and GaAs has been studied by utilizing showered electron‐beam assisted etching in the presence of Cl2 gas. Anisotropic etching has been demonstrated for both Si and GaAs EB dry etching. Si and GaAs patterns with 0.6 and 0.3 μm linewidths have been obtained at a dose of 2×10−2 C/cm2 and 1×10−3 C/cm2. It was confirmed, through measuring photoluminescence, that damage induced by EB dry etching is nearly the same as that caused by gas etching and less than damage induced by reactive ion‐beam etching and ion‐beam etching.
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81.65.-b Surface treatments
79.20.Kz Other electron-impact emission phenomena

Molecular beam epitaxial growth of AlxGa1−xAs (x=0.2–0.7) on (111)B‐GaAs using As4 and As2

T. Hayakawa, M. Nagai, M. Morishima, H. Horie, and K. Matsumoto

Appl. Phys. Lett. 59, 2287 (1991); http://dx.doi.org/10.1063/1.106045 (3 pages) | Cited 11 times

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Basic properties of AlxGa1−xAs (x=0.2–0.7), grown by molecular beam epitaxy on 0.5°‐tilted (111)B‐GaAs, are studied. We have employed the wide substrate temperature, Ts, range of 540–740 °C and different As species; As4 and As2. The surface morphology has been found to depend strongly upon the As species; a specular surface morphology cannot be obtained when using As2 whereas a specular smooth surface can be obtained at high temperatures when using As4. Photoluminescence intensity of n‐Al0.3Ga0.7As (Si=1×1018 cm−3) grown at low Ts (<620–630 °C) does not depend upon the As species and is considered to be determined by defects, such as microtwins and stacking faults, which have been observed by transmission electron microscopy. At high Ts (≳650 °C) photoluminescence intensity is lower for the case of As2 than As4 and this could be due to point defects, such as As interstitials and/or antisite As (AsGa). Deep level transient spectroscopy has been measured on n‐Al0.7Ga0.3As grown on (100)‐ and (111)B‐substrates with As4.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Cr III-V semiconductors

Intrinsic acceptor antisite defects in GaAs under hydrostatic pressure

A. Kangarlu, H. Guarriello, R. Berney, and P. W. Yu

Appl. Phys. Lett. 59, 2290 (1991); http://dx.doi.org/10.1063/1.106046 (3 pages) | Cited 3 times

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Photoluminescence is used to study the behavior of CAs‐related and GaAs cation antisite defect centers in GaAs under hydrostatic pressure at 10 K. The pressure coefficients, α, for these transitions were determined. We found α(CAs) to be about 12 meV/kbar which is very close to the band edge pressure dependence. The GaAs center demonstrated only slightly smaller coefficient. This makes the binding energy of CAs and GaAs, at 26 and 77 meV, respectively, almost independent of pressure. At pressures above 30 kbar relatively strong transitions were observed that displayed very small pressure dependence. The deepening of the ΓX‐mixed donor levels interacting with these acceptor levels are primarily responsible for small pressure coefficients of the transitions above 30 kbar. A deepening of ∼160 meV is observed for the donors.
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71.55.Eq III-V semiconductors
78.55.Cr III-V semiconductors
61.72.S- Impurities in crystals

Intersite Coulomb repulsion and intrasite attraction for DX centers in GaAs

Don Monroe

Appl. Phys. Lett. 59, 2293 (1991); http://dx.doi.org/10.1063/1.106047 (3 pages) | Cited 11 times

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The observed mobility increase in n‐GaAs under hydrostatic pressure has been argued to favor a neutral DX center, since the pressure‐induced electron‐density reduction is then offset by reduced charged‐center scattering. We show that the observations instead favor the negative‐U model for DX: spatial correlations between the resulting negative and positive charges smooth the potential fluctuations and enhance the mobility.
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71.55.Eq III-V semiconductors
72.80.Ey III-V and II-VI semiconductors
72.10.Fk Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect)

Hydrogen induced detrapping of transition metals in amorphous silicon

S. Coffa and J. M. Poate

Appl. Phys. Lett. 59, 2296 (1991); http://dx.doi.org/10.1063/1.106048 (3 pages) | Cited 19 times

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The implantation of H into amorphous Si is shown to passivate the structural defects that act as traps for fast diffusing transition metal impurities such as Cu or Pd. The depth distributions of Cu or Pd, as determined by Rutherford backscattering spectrometry, are governed by the H distribution for concentrations up to 5 at. % and temperatures between 250 and 500 °C. The H can cause complete detrapping of the metal impurities leaving a Gaussian deficit in their equilibrium distributions mirroring the H depth distribution. The H is thus more strongly bonded to the traps than Cu or Pd. The total trap concentration is estimated to be 2.2±0.9 at. % for 350 °C annealing. Implanted F also induces detrapping of Cu and Pd. These detrapping phenomena demonstrate equivalence between the structural traps that control diffusive properties and the defects that control electrical and optical properties.
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66.30.J- Diffusion of impurities
61.80.Jh Ion radiation effects

Plasma etching damage in GaAs studied by resonant Raman scattering

W. Pletschen, J. Wagner, G. Kaufel, and K. Köhler

Appl. Phys. Lett. 59, 2299 (1991); http://dx.doi.org/10.1063/1.106049 (3 pages) | Cited 7 times

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We have used resonant Raman scattering by longitudinal optical (LO) phonons to study the effect of reactive ion etching (RIE) in a CHF3 plasma on n‐type GaAs. Interference effects between dipole allowed and electric‐field‐induced forbidden LO phonon scattering have been exploited to distinguish between impurity‐induced and electric‐field‐induced forbidden scattering. This allowed us to analyze both RIE‐induced near‐surface damage and resulting changes in the space‐charge electric field as a function of the self‐bias voltage applied in RIE. For bias voltages beyond 200 V a well‐defined increase in defect concentration and consequently a reduction in crystalline perfection was observed. The surface electric field averaged over the probing depth of the Raman experiment shows an initial decrease followed by an increase with increasing bias voltage.
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78.30.Fs III-V and II-VI semiconductors
68.35.Dv Composition, segregation; defects and impurities
61.80.Jh Ion radiation effects

Observation of large second order susceptibility via intersubband transitions at λ∼10 μm in asymmetric coupled AlInAs/GaInAs quantum wells

Carlo Sirtori, Federico Capasso, Deborah L. Sivco, S. N. G. Chu, and Alfred Y. Cho

Appl. Phys. Lett. 59, 2302 (1991); http://dx.doi.org/10.1063/1.106050 (3 pages) | Cited 63 times

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We report the first observation of second harmonic generation associated with intersubband transitions in AlInAs/GaInAs quantum wells. The measured second order susceptibility in our new asymmetric coupled well structure lattice matched to InP is 4.8×10−8 m/V, about 100 times larger than bulk values in InP, GaAs, and InAs.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Novel contactless mode of electroreflectance

X. Yin and Fred H. Pollak

Appl. Phys. Lett. 59, 2305 (1991); http://dx.doi.org/10.1063/1.106051 (3 pages) | Cited 45 times

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We report a new contactless mode of electroreflectance which utilizes a condenserlike system. One electrode consists of a transparent conductive coating on a transparent substrate which is separated from the sample surface by a thin layer of air. We have measured the contactless electroreflectance spectra at 300 K from a number of materials including semi‐insulating bulk GaAs, bulk narrow gap Hg0.8Cd0.2Te, a GaAs structure with a large, uniform electric field and a GaAs/Ga1−xAlxAs (x≊0.2) coupled double quantum well.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Optical properties of strained asymmetric triangular InGaAs/GaAs multiple quantum wells

R. Droopad, K. Y. Choi, R. A. Puechner, K. T. Shiralagi, D. S. Gerber, and G. N. Maracas

Appl. Phys. Lett. 59, 2308 (1991); http://dx.doi.org/10.1063/1.106052 (3 pages) | Cited 8 times

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We present the first report of a strained‐layer asymmetric triangular In0.15Ga0.85As/GaAs multiple quantum well structure realized by molecular beam epitaxy. Low‐temperature photoluminescence experiments showed that the optical efficiency of such a structure is more than five times higher than an equivalent rectangular In0.15Ga0.85As/GaAs multiple quantum well structure grown under the same conditions. This is due to an increased collection of photoexcited carriers that are being swept by the well as a result of the field formed by compositional grading and a reduction of nonradiative recombination centers.
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78.55.Cr III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

New approach to grow pseudomorphic structures over the critical thickness

Y. H. Lo

Appl. Phys. Lett. 59, 2311 (1991); http://dx.doi.org/10.1063/1.106053 (3 pages) | Cited 118 times

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We propose to grow pseudomorphic and heteroepitaxial structures on thin, free‐standing substrates. From the theoretical analysis, pseudomorphic layers of arbitrary thickness can be grown on a substrate thinner than the critical thickness. Even if the substrate is twice as thick as the critical thickness, very high‐quality heteroepitaxy can still be achieved with all the threading dislocations gettered by the thin substrate. The conclusions derived from the theoretical models can be applied to most of the pseudomorphic and heteroepitaxial material systems of current interest.
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68.55.-a Thin film structure and morphology
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.72.Yx Interaction between different crystal defects; gettering effect
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Suppression of nucleation during crystallization of amorphous thin Si films

James S. Im, Jung H. Shin, and Harry A. Atwater

Appl. Phys. Lett. 59, 2314 (1991); http://dx.doi.org/10.1063/1.106054 (3 pages) | Cited 7 times

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The ability to selectively suppress crystal nucleation during the crystallization of amorphous Si films is often desirable, but is not generally possible. We demonstrate that a periodic two‐step process−involving intermediate temperature ion irradiation followed by high‐temperature isothermal annealing−can suppress nucleation in amorphous regions without destroying existing crystals or inhibiting crystal growth. When interpreted in the context of transient nucleation theory, our results indicate that the size distribution of critical and subcritical‐sized clusters is modified by exposure to intermediate temperature high‐energy ion irradiation. The reduction in the population of critical‐sized clusters, which presumably occurs via an interfacial amorphization process, in turn leads to a prolonged incubation period in the subsequent thermal annealing step during which nucleation is negligible but crystal growth is substantial.
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64.60.Q- Nucleation
82.60.Nh Thermodynamics of nucleation
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Photoluminescent properties of Er‐doped In1−xGaxP prepared by metalorganic vapor phase epitaxy

A. J. Neuhalfen and B. W. Wessels

Appl. Phys. Lett. 59, 2317 (1991); http://dx.doi.org/10.1063/1.106055 (3 pages) | Cited 29 times

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Atmospheric pressure metalorganic vapor phase epitaxy has been used to prepare Er‐doped In1−xGaxP layers using an Er beta‐diketonate precursor as the dopant source. Temperature‐dependent photoluminescent properties were studied as a function of alloy composition for x=0–0.98. All the Er‐doped In1−xGaxP layers exhibited strong characteristic Er3+ intra‐4f‐shell photoluminescent emission at 0.801 eV which was independent of the alloy composition. A thermal quenching of the Er3+‐related emission was observed and depended on the alloy composition. For In1−xGaxP alloys with x≳0.2, Er3+‐related luminescence is observed at 295 K.
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78.55.Cr III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
71.55.Eq III-V semiconductors

Growth and structural analysis of GdBa2Cu3O7 superconducting thin films on MgO single‐crystal substrates

H. R. Yi, H. C. Li, R. L. Wang, J. W. Li, C. A. Wang, L. Li, Y. B. Jia, and Z. X. Zhao

Appl. Phys. Lett. 59, 2320 (1991); http://dx.doi.org/10.1063/1.106056 (3 pages) | Cited 1 time

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Thin films of GdBa2Cu3O7 superconductor were grown in situ on MgO single‐crystal substrates under different substrate temperatures (Ts). When Ts=800 °C, the films were epitaxially grown with the c axis perpendicular to the film surface. The growth quality was very good, but the zero resistance critical temperature (Tc0) was only 85 K and the transition width (ΔTc) was 1.5 K. When Ts=670 °C, some of the films were epitaxially grown with the c axis perpendicular to the film surface. Some were mainly c axis oriented with a small amount of (110) and a‐axis orientation. The growth quality was relatively poor, but they had Tc0 of 89–91 K and ΔTc of 0.6–1 K.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
74.70.-b Superconducting materials other than cuprates
74.78.-w Superconducting films and low-dimensional structures
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition

Y1Ba2Cu3O6+δ growth on thin Y‐enhanced SiO2 buffer layers on silicon

T. Robin, A. Mesarwi, N. J. Wu, W. C. Fan, L. Espoir, R. Sega, and A. Ignatiev

Appl. Phys. Lett. 59, 2323 (1991); http://dx.doi.org/10.1063/1.106057 (3 pages) | Cited 8 times

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SiO2 buffer layers as thin as 2 nm have been developed for use in the growth of Y1Ba2Cu3O6+δ thin films on silicon substrates. The SiO2 layers are formed through Y enhancement of silicon oxidation, and are highly stoichiometric. Y1Ba2Cu3O6+δ film growth on silicon with thin buffer layers has shown c orientation and Tc0=78 K.
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74.78.-w Superconducting films and low-dimensional structures
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
68.35.Fx Diffusion; interface formation

Residual losses in epitaxial thin films of YBa2Cu3O7 from microwave to submillimeter wave frequencies

D. Miller, P. L. Richards, S. Etemad, A. Inam, T. Venkatesan, B. Dutta, X. D. Wu, C. B. Eom, T. H. Geballe, N. Newman, and B. F. Cole

Appl. Phys. Lett. 59, 2326 (1991); http://dx.doi.org/10.1063/1.106058 (3 pages) | Cited 19 times

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We have measured the residual loss in five epitaxial a‐b plane films of the high‐Tc superconductor YBa2Cu3O7. Microwave measurements near 10 GHz were made by resonance techniques at 4 K. Submillimeter measurements from ∼1.5 to 21 THz were made at 2 K by a direct absorption technique. We use a model of weakly coupled superconducting grains and a homogeneous two‐fluid model to fit the data for each film below the well‐known absorption edge at 13.5 THz. When the penetration depth determined from muon spin rotation measurements is used to constrain each model, the weakly coupled grain model is able to fit the measured absorptivities for all films, but the two‐fluid model is less successful.
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74.25.N- Response to electromagnetic fields
74.70.-b Superconducting materials other than cuprates
74.78.-w Superconducting films and low-dimensional structures
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

New designs for antenna‐coupled superconducting bolometers

J. Mees, M. Nahum, and P. L. Richards

Appl. Phys. Lett. 59, 2329 (1991); http://dx.doi.org/10.1063/1.106059 (3 pages) | Cited 22 times

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We propose a novel antenna‐coupled low Tc superconducting bolometer which makes use of the thermal boundary resistance and the trapping of quasiparticles at metal‐superconducting interfaces. A thin strip of superconductor, whose temperature is regulated at the midpoint of its resistive transition, serves both as a resistive load to thermalize the infrared current from the antenna and as a thermometer to measure the resulting temperature rise. Calculations give a noise equivalent power (NEP)≊7×10−16 T5/2 WHz−1/2 and a time constant τ≊10−8 T−2 s for a 2×2 μm2 thermometer area at temperature T (K). Designs for efficient on‐chip rf matching and filter networks with well‐defined bandpasses are presented. These detectors can be used to make frequency‐multiplexed array receivers for astronomical observations at near millimeter wavelengths.
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85.25.Qc Superconducting surface acoustic wave devices and other superconducting devices
84.40.Ba Antennas: theory, components and accessories
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

Chemical vapor deposition of copper from 1,5‐cyclooctadiene copper(I) hexafluoroacetylacetonate

Scott K. Reynolds, Christopher J. Smart, Emil F. Baran, Thomas H. Baum, Carl E. Larson, and Phillip J. Brock

Appl. Phys. Lett. 59, 2332 (1991); http://dx.doi.org/10.1063/1.106060 (3 pages) | Cited 52 times

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We have studied the chemical vapor deposition of copper from 1,5‐cyclooctadiene Cu(I) hexafluoroacetylacetonate, a moderately volatile yellow cystalline solid. It yields pure copper by pyrolytic decomposition at 150–250 °C, produces copper films with near bulk resistivity, and has the advantage of being air stable at room temperature.
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82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
73.61.At Metal and metallic alloys
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
FREE

Comment on ‘‘Quantum capacitance of resonant tunneling diodes’’

Serge Luryi

Appl. Phys. Lett. 59, 2335 (1991); http://dx.doi.org/10.1063/1.106061 (2 pages) | Cited 5 times

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Abstract Unavailable
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Gk Tunneling
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
FREE

Response to ‘‘Comment on ‘Quantum capacitance of resonant tunneling diodes’ ’’

Yuming Hu and Shawn Stapleton

Appl. Phys. Lett. 59, 2336 (1991); http://dx.doi.org/10.1063/1.106062 (1 page)

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Abstract Unavailable
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Gk Tunneling
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
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