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4 Nov 1991

Volume 59, Issue 19, pp. 2351-2472

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High power laser‐amplifier photonic integrated circuit for 1.48 μm wavelength operation

U. Koren, R. M. Jopson, B. I. Miller, M. Chien, M. G. Young, C. A. Burrus, C. R. Giles, H. M. Presby, G. Raybon, J. D. Evankow, B. Tell, and K. Brown‐Goebeler

Appl. Phys. Lett. 59, 2351 (1991); http://dx.doi.org/10.1063/1.106063 (3 pages) | Cited 9 times

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We demonstrate a laser amplifier photonic integrated circuit having 370‐mW cw output power emitted in a single transverse mode a 1.48 μm wavelength, suitable for pumping erbium‐doped fiber amplifiers.
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42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers
42.60.By Design of specific laser systems

Preparation of PbTiO3 thin films at low temperature by an excimer laser ablation technique

Hitoshi Tabata, Tomoji Kawai, Shichio Kawai, Osamu Murata, Junzo Fujioka, and Shun‐ichi Minakata

Appl. Phys. Lett. 59, 2354 (1991); http://dx.doi.org/10.1063/1.106038 (3 pages) | Cited 51 times

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We have formed PbTiO3 thin films on (100) SrTiO3 substrates at a temperature of 350 °C using an ArF excimer laser ablation technique. Until now, PbTiO3 films have not been formed at temperatures lower than 500 °C using other thin‐film techniques. The important points in the present study are the laser excitation of the substrate during the film growth and the lattice matching between the film and the substrate. The film deposited on the SrTiO3 substrate shows preferential orientation of the c‐axis perpendicular to the substrate surface.
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Variable transmission electrochromic windows utilizing tin‐doped indium oxide counterelectrodes

B. C. H. Steele and S. J. Golden

Appl. Phys. Lett. 59, 2357 (1991); http://dx.doi.org/10.1063/1.106014 (3 pages) | Cited 5 times

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The optical performance of Li‐based variable transmission electrochromic windows incorporating tin‐doped indium oxide thin‐film counterelectrodes have been measured. The electrolyte used was 1M LiClO4 dissolved in dry propylene carbonate, the active device area was approximately 10 cm2 and the devices were driven galvanostatically with a current density of 100 or 200 μA/cm2. Significant and reversible transmission modulation could be achieved in these devices. The characteristics of the WO3 electrochromic electrode and the tin‐doped indium oxide counterelectrode used were found to have a marked effect on the optical response of the device. The plasma wavelength of the tin‐doped indium oxide counterelectrode was found to be a critical parameter.  
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42.79.Fm Reflectors, beam splitters, and deflectors
42.79.Ls Scanners, image intensifiers, and image converters
78.66.-w Optical properties of specific thin films
81.15.Cd Deposition by sputtering
85.60.-q Optoelectronic devices

Linewidth enhancement factor for GaInSbAs/GaSb lasers

A. N. Baranov

Appl. Phys. Lett. 59, 2360 (1991); http://dx.doi.org/10.1063/1.106015 (3 pages) | Cited 3 times

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The linewidth enhancement factor α has been determined in GaInSbAs/GaSb lasers emitting near 1.8 μm (2 μm at RT) from the spontaneous emission spectra below threshold. For type‐I lasers, where a p‐n junction was located at the GaAlSbAs/GaSb heteroboundary, the measured α is 3.1 at the lasing wavelength at 82 K. In type‐II lasers with the p‐GaSb/GaInSbAs heterojunction α was estimated to be at least 2 times lower, that can be attributed to the formation of a quantum well structure at this heteroboundary under lasing conditions.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Current controlled GaAs/AlGaAs multiple quantum well phase shifter operating at 0.9 μm

C. L. Chuang, T. Yoon, R. Jin, J. Xu, G. Khitrova, H. M. Gibbs, R. Fu, and C. S. Hong

Appl. Phys. Lett. 59, 2363 (1991); http://dx.doi.org/10.1063/1.106016 (3 pages)

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An optical phase shifter with current injection has been demonstrated in a GaAs/AlGaAs multiple quantum well (MQW) single mode waveguide. Phase shifts at different wavelengths have been measured and compared with the theory in L. Banyai and S. W. Koch, Z. Physik B 63, 283 (1986). A 3π phase shift has been achieved in a 400‐μm‐long waveguide with almost no material absorption.
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42.79.Hp Optical processors, correlators, and modulators
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Multiple‐quantum‐well nonlinear waveguide grating device

M. Cada, F. Vasey, J. M. Stauffer, and F. K. Reinhart

Appl. Phys. Lett. 59, 2366 (1991); http://dx.doi.org/10.1063/1.106017 (3 pages) | Cited 2 times

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We report on the preliminary experimental demonstration of a multiple‐quantum‐well waveguide grating element. Due to optical nonlinearities in a multiple‐quantum‐well layer incorporated into the structure, the out‐coupling angle of the grating is varied by the intensity of light in a guided mode. Experiments with GaAs‐based planar as well as rib waveguide samples confirmed theoretical predictions. Changes in the coupling angle obtained are on the order of minutes. The demonstrated principle can be employed in fine tuning of the coupling angle, fine focusing of the output beam, or as a nonlinear beam‐steering method for dispersion measurements.
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42.79.Gn Optical waveguides and couplers

All fiber, low threshold, widely tunable single‐frequency, erbium‐doped fiber ring laser with a tandem fiber Fabry–Perot filter

Namkyoo Park, Jay W. Dawson, Kerry J. Vahala, and Calvin Miller

Appl. Phys. Lett. 59, 2369 (1991); http://dx.doi.org/10.1063/1.106018 (3 pages) | Cited 39 times

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An all fiber, widely tunable, single‐frequency, erbium‐doped fiber ring laser was constructed with a threshold pump power as low as 10 mW. Tuning over more than 30 nm was obtained by applying 0 to 17 dc V to an intracavity fiber Fabry–Perot filter. Threshold pump power versus wavelength data showed low variation over the tuning range. Mode hopping suppression with a tandem fiber Fabry–Perot filter is proposed and demonstrated. Stable single‐frequency operation was demonstrated with side mode suppression higher than 35 dB.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.-v Laser optical systems: design and operation
42.81.Wg Other fiber-optical devices
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Phase‐shifting electron holography by beam tilting

Q. Ru, J. Endo, T. Tanji, and A. Tonomura

Appl. Phys. Lett. 59, 2372 (1991); http://dx.doi.org/10.1063/1.106019 (3 pages) | Cited 17 times

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A phase‐shifting method to directly measure the amplitude and phase distribution of specimen in an electron holographic microscope without the introduction of large number of carrier fringes is proposed. The initial phase of electron holograms is shifted by tilting the incident electron beam with a digital voltage/current supply. Several holograms of a specimen with properly different phase shifts are recorded digitally and used to calculate the amplitude and phase distributions of the specimen. Experimental result of observing the phase distribution of a cubic MgO crystal is shown.
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42.40.-i Holography
07.78.+s Electron, positron, and ion microscopes; electron diffractometers
41.75.Fr Electron and positron beams

1.5 μm wavelength InGaAs/InGaAsP distributed feedback multi‐quantum‐well lasers grown by chemical beam epitaxy

W. T. Tsang, F. S. Choa, M. C. Wu, Y. K. Chen, R. A. Logan, T. Tanbun‐Ek, S. N. G. Chu, K. Tai, A. M. Sergent, and K. W. Wecht

Appl. Phys. Lett. 59, 2375 (1991); http://dx.doi.org/10.1063/1.106020 (3 pages)

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We demonstrated the first successful growth of 1.5 μm strained‐layer InGaAs/InGaAsP multi‐quantum‐well (MQW) distributed feedback (DFB) lasers by chemical beam epitaxy (CBE). In these DFB wafers, a quaternary grating is placed at the bottom of the MQW stack with an InP spacer layer. Studies by transmission electron microscopy show that defect‐free InP regrowth was achieved with no mass transport needed over the grating corrugations before regrowth. With CBE regrowth the shapes of the gratings were well preserved. The InP overlayer also very effectively smoothed out the quaternary surface corrugations resulting in very flat MQW structures. Buried‐heterostructure 6‐QW DFB lasers (250 μm long and as‐cleaved) operated at 1.55 μm with cw threshold currents 10–15 mA and slope efficiencies up to 0.35 mW/mA (both facets). Side‐mode suppression ratios (SMSR) as high as 49 dB was obtained. The laser operated in the same DFB mode with SMSR staying above 40 dB from threshold and throughout the entire current range even at high temperatures (70 °C checked).
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42.55.Px Semiconductor lasers; laser diodes
42.82.-m Integrated optics
68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

First operation of a multi‐electron‐beam Cherenkov free‐electron laser oscillator

Qingyuan Wang, Shanfu Yu, Peijue Xun, Shenggang Liu, Kesong Hu, Yutao Chen, and Pinshan Wang

Appl. Phys. Lett. 59, 2378 (1991); http://dx.doi.org/10.1063/1.106021 (3 pages) | Cited 1 time

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The first experimental demonstration of the physical mechanism underlying multi‐electron‐beam Cherenkov free‐electron lasers has been carried out. Electron beams of a total beam current of 280 A at 500 kV were introduced into a multi‐dielectric cavity and stimulated Cherenkov radiation of 1.7 MW at 33.4 GHz was generated. The interaction efficiency was about 1.2%.
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41.60.Cr Free-electron lasers
52.25.Dg Plasma kinetic equations

Comparison of mode suppression and large signal modulation between lattice matched and strained InGaAs/AlGaAs quantum well lasers

Yeeloy Lam, John P. Loehr, and Jasprit Singh

Appl. Phys. Lett. 59, 2381 (1991); http://dx.doi.org/10.1063/1.106022 (3 pages)

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Numerical techniques are developed to study the output spectra and to solve the coupled mode rate equations for InxGa1−xAs/Al0.3Ga0.7As quantum well lasers. The optical properties of the laser are calculated from a 4×4 k⋅p band structure which includes the effects of strain. We find that the side modes are severely suppressed in the strained laser. Large signal switching of the laser is also studied and the role of strain is identified in the device response. If the laser is switched from the off state to a state of given photon density in the lasing mode, then the strained system exhibits a faster time response. If, however, the laser is switched from the off state to a state of given total photon density, then the strained system has a slower time response.
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42.55.Px Semiconductor lasers; laser diodes
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Analysis of the elastic wave excitation in solid plates by phase velocity scanning of a laser beam

Yusuke Tsukahara

Appl. Phys. Lett. 59, 2384 (1991); http://dx.doi.org/10.1063/1.106023 (2 pages) | Cited 5 times

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A theory is presented for the propagation of elastic waves in a plate excited by scanning a laser beam at a constant velocity. A formula for the excitation by scanning a line‐focused laser beam is deduced from a general formula and analyzed extensively in a two‐dimensional model. It is derived that such modes of Lamb waves are selectively excited whose phase velocities match the scanning velocity. It is also shown that major characteristics of experimental observations previously made are explained with the present model.
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43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
43.38.+n Transduction; acoustical devices for the generation and reproduction of sound
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Diamond synthesis by microwave plasma chemical vapor deposition using graphite as the carbon source

M. C. Salvadori, J. W. Ager, I. G. Brown, and K. M. Krishnan

Appl. Phys. Lett. 59, 2386 (1991); http://dx.doi.org/10.1063/1.106024 (3 pages) | Cited 16 times

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We report on the growth of high‐quality diamond using a microwave plasma chemical vapor deposition (CVD) system in which the feed gas contains no hydrocarbons, but instead the source of carbon is a graphite piece which resides within the plasma volume. Results of experiments using this technique by itself and in combination with the normal methane feed gas method are described. The samples were analyzed by Raman spectroscopy and scanning electron microscopy. Diamond grown in this way was found to be particularly pure and of high crystallinity.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.10.-h Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
68.55.Nq Composition and phase identification
68.55.-a Thin film structure and morphology

Structural and optical properties of ferroelectric Bi4Ti3O12 thin films by sol‐gel technique

P. C. Joshi, Abhai Mansingh, M. N. Kamalasanan, and Subhas Chandra

Appl. Phys. Lett. 59, 2389 (1991); http://dx.doi.org/10.1063/1.106025 (2 pages) | Cited 42 times

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Ferroelectric thin films of Bi4Ti3O12 were fabricated on several types of substrates, including quartz, steel plates, and indium‐tin‐oxide coated glass slides, by sol‐gel technique. Crystalline, transparent, and crack‐free films of 5000 Å thickness were fabricated by spinning and post‐deposition annealing at a temperature of 550 °C. Ferroelectric properties were confirmed by P‐E hysteresis loops. The dielectric constant and optical transmission were also measured.
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77.80.Dj Domain structure; hysteresis
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Modeling of the sp3/sp2 ratio in ion beam and plasma‐deposited carbon films

W. Möller

Appl. Phys. Lett. 59, 2391 (1991); http://dx.doi.org/10.1063/1.106026 (3 pages) | Cited 31 times

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Model calculations are described which predict the fraction of tetrahedral (sp3) versus graphitic (sp2) bonding in ion beam or plasma‐deposited amorphous carbon films on the basis of the preferential displacement of sp2 atoms. Displacement yields obtained from static trim simulations are used as input data for a simple analytical growing layer model of ion beam deposition. The sp3/sp2 ratio is found to increase with increasing carbon ion energy between 30 eV and 1 keV. Assuming equal probabilities for a free (implanted or displaced) atom to become trapped at either sp2 or sp3 sites results in sp3/sp2 ratios between 1 and 3.5. More refined dynamic simulations with tridyn confirm the trends with slightly lower sp3/sp2 ratios for ion beam or plasma deposition, also involving hydrogen. A decrease of the sp3/sp2 ratio towards high energies cannot be explained by preferential displacement only, in contrast to proposals in recent literature.
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61.43.Fs Glasses
61.43.-j Disordered solids
61.44.Br Quasicrystals
61.80.Jh Ion radiation effects
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Comparison of high quality (111)B and (100) AlGaAs grown by molecular beam epitaxy

Albert Chin, Paul Martin, Jim Ballingall, Tan‐Hua Yu, and John Mazurowski

Appl. Phys. Lett. 59, 2394 (1991); http://dx.doi.org/10.1063/1.106409 (3 pages) | Cited 11 times

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State‐of‐the‐art quality Al0.3Ga0.7As was achieved on both (111)B and (100) GaAs by molecular beam epitaxy. Low‐temperature photoluminescence linewidths of 2.9 and 2.4 meV were obtained for (111)B and (100) Al0.3Ga0.7As, grown at 650 and 700 °C, respectively, with nearly equivalent integrated luminescence intensity. This is the narrowest linewidth ever reported for (111) AlGaAs. The low growth temperature and high material quality of (111)B Al0.3Ga0.7As is expected to be an important factor to the future development of both electronic and optical heterostructure devices.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.10.-h Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
78.55.Cr III-V semiconductors

Role of trimethylgallium exposure time in carbon doping and high temperature atomic layer epitaxy of GaAs

K. G. Reid, H. M. Urdianyk, and S. M. Bedair

Appl. Phys. Lett. 59, 2397 (1991); http://dx.doi.org/10.1063/1.106027 (3 pages) | Cited 7 times

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The window for the ALE self limited growth of GaAs can be expanded by reducing the gas phase decomposition. We found that the exposure time to TMGa flux is critical and has to be reduced for ALE to be achieved at high growth temperature. An ALE reactor was used which allows minimum gas heating, short exposure time, and sudden termination of the gas exposure without relying on the diffusion of gases away from the substrate surface. ALE was achieved in the 450–700 °C temperature range. Carbon doping in the 1015–1020/cm3 range was also achieved by adjusting the exposure time and the growth temperature. The combined role of gas phase decomposition and surface reaction are proposed to explain these results.
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68.55.-a Thin film structure and morphology
73.61.Ey III-V semiconductors
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Arsenic implantation to oxide filled trench isolation structure

G. Fuse, H. Iwasaki, and M. Onoda

Appl. Phys. Lett. 59, 2400 (1991); http://dx.doi.org/10.1063/1.106028 (3 pages) | Cited 2 times

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We have studied crystal defects of devices with oxide filled trench isolation introduced by high dose (∼1015 cm−2) arsenic implantation at 40–80 keV and the dependence of their growth on oxidation conditions. Cross‐sectional views of the devices are observed by transmission electron microscopy. Solid phase epitaxial regrowth becomes very slow at the edge of the silicon island. Oxidation of the silicon substrate is influenced by the stress generated in the oxide filled trench structure. Defect density after oxidation (1) is higher for pyrogenic H2+O2 oxidation than for dry oxidation, (2) is lower at the edge than in the central region of the silicon island, and (3) decreases significantly for a low energy arsenic implantation (40 keV).
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85.40.Hp Lithography, masks and pattern transfer
81.65.-b Surface treatments
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

High‐concentration Ce doping at n‐ and p‐type Al/GaAs Schottky barrier interfaces

E. B. Foxman, N. Ikarashi, and K. Hirose

Appl. Phys. Lett. 59, 2403 (1991); http://dx.doi.org/10.1063/1.106029 (3 pages) | Cited 1 time

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Al/GaAs Schottky barriers are fabricated with 2.5–20‐Å thick doping layers of Ce of concentrations 1020 cm−3 and 1021 cm−3 situated below the GaAs surface. Schottky barrier heights (SBHs) are determined from current‐ and capacitance‐voltage measurements. n‐type SBHs decrease with increasing Ce doping layer thickness, while p‐type SBHs increase, but to a lesser degree. A cross‐sectional image taken by high‐resolution transmission electron microscopy shows that Ce is located in the substitutional sites of the doping layers. The changes in the SBHs are attributed to strain induced by Ce atoms in the substitutional sites. The difference in the magnitudes of change observed for n‐ and p‐type SBHs is discussed in relation to the inhomogeneity observed in the density of Ce atoms at the interface regions.<pc;normal>
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.61.Ey III-V semiconductors

Raman scattering of slab‐mode phonons in InGaAsP/InP multiple quantum wells

M. Lazzouni, D. F. Nelson, R. A. Logan, and T. Tanbun‐Ek

Appl. Phys. Lett. 59, 2406 (1991); http://dx.doi.org/10.1063/1.106030 (3 pages) | Cited 1 time

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Raman light scattering experiments in lattice‐matched InGaAsP/InP multiple quantum wells are reported. Use of laser light below the InP band gap permitted study of right‐angle scattering with the scattered light emerging parallel to the layers. Scattering by the binary InP longitudinal optic (LO) and transverse optic (TO) phonons dominated the spectra. The polarization selection rules for the TO and LO scattering were found to differ strongly compared to those operative in bulk InP. This is interpreted as arising from the interchange of the LO and TO phonon frequencies as expected in a dielectric continuum slab whose thickness is small compared to the wavelength of the incident radiation. In addition weak Raman scattering by a mixture of InGaAs and InP vibrations in the quaternary well material is reported.
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63.20.D- Phonon states and bands, normal modes, and phonon dispersion
78.30.Fs III-V and II-VI semiconductors
72.10.Di Scattering by phonons, magnons, and other nonlocalized excitations

Thermally stable, low‐resistance NiInWNx ohmic contacts to n‐type GaAs prepared by sputter deposition

Masanori Murakami, Naftali Lustig, W. H. Price, and A. Fleischman

Appl. Phys. Lett. 59, 2409 (1991); http://dx.doi.org/10.1063/1.106031 (3 pages) | Cited 3 times

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A new thermally stable, low‐resistance In‐based ohmic contact to n‐type GaAs has been developed. The contacts consist of ion‐beam sputtered Ni (5 nm)/In (5 nm)/Ni (5 nm) layers with a magnetron sputtered WNx overlayer. A low‐contact resistance of ∼0.3 Ω mm was obtained by rapid thermal annealing at 750 °C for ∼5 s. The contact resistance and the excellent contact morphology remained unchanged after annealing at 400 °C for more than 100 h. The present deposition technique provides several advantages over previously reported electron‐beam evaporated In‐based contacts. In particular, the ability to deposit a thick WNx overlayer simplifies GaAs integrated circuit (IC) fabrication by (a) eliminating the need for separate diffusion barrier deposition and patterning steps, and (b) providing for low‐sheet resistance (∼2 Ω/☒) IC interconnect capabilities. In addition, sputter deposition allows for the controlled incorporation of n‐type dopants into the metallization if further reduction of the contact resistance is required.
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73.40.Cg Contact resistance, contact potential
73.40.Ns Metal-nonmetal contacts
85.40.Ls Metallization, contacts, interconnects; device isolation

Reduced lattice temperature high‐speed operation of pseudomorphic InGaAs/GaAs field‐effect transistors

J. Laskar, S. Maranowski, S. Caracci, M. Feng, and J. Kolodzey

Appl. Phys. Lett. 59, 2412 (1991); http://dx.doi.org/10.1063/1.106032 (3 pages) | Cited 1 time

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This letter presents a detailed study of the temperature dependence of submicron pseudomorphic InGaAs on GaAs substrate modulation doped field‐effect transistors (MODFETs), doped‐channel metal insulator field effect transistors (MISFETs), and metal semiconductor field‐effect transistors (MESFETs). We determine similar variation in the measured extrinsic current gain cutoff frequency, FT, and similar dependencies of the effective electron velocity, veff, with reduced lattice temperature for the different field‐effect transistors. The veff∼T−b where 0.15<b<0.20 over the temperature range of 300 to 110 K. These results provide direct experimental evidence that the saturated velocity of electrons is the most important parameter for high‐speed operation and with proper design these different pseudomorphic InGaAs/GaAs field‐effect transistors provide similar potential for high‐speed operation.  
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling

Comparison of As species (As4 and As2) in molecular beam epitaxial growth of AlxGa1−xAs (x=0.2–0.7) on (100) GaAs

T. Hayakawa, M. Morishima, M. Nagai, H. Horie, and K. Matsumoto

Appl. Phys. Lett. 59, 2415 (1991); http://dx.doi.org/10.1063/1.106033 (3 pages) | Cited 3 times

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Systematic studies have been made for the first time on the basic properties of AlxGa1−xAs (x=0.2–0.7) grown by molecular beam epitaxy in the wide growth temperature range of 540–780 °C with As4 and As2. The forbidden growth temperature region (FTR), where the specular smooth surface cannot be obtained, has been found to depend strongly upon both the As species and the AlAs mole fraction x. FTR does not change with x in the case of As4; however, in the case of As2, FTR does not exist for x=0.2 and it increases with x from 0.3–0.7. Photoluminescence of n‐Al0.3Ga0.7As (Si=1×1018 cm−3) grown with As2 shows lower intensity and higher sensitivity to growth temperature than those of samples grown with As4. Deep level transient spectroscopy has been measured on n‐Al0.7Ga0.3As (Si=2×1016 cm−3). New electron traps are found in layers grown with As2.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.61.Ey III-V semiconductors
78.55.Cr III-V semiconductors

High‐quality GaAs on sawtooth‐patterned Si substrates

K. Ismail, F. Legoues, N. H. Karam, J. Carter, and Henry I. Smith

Appl. Phys. Lett. 59, 2418 (1991); http://dx.doi.org/10.1063/1.106034 (3 pages) | Cited 14 times

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We report a novel technique for growing GaAs on Si substrates with a low density of threading dislocations. The process involves patterning a 200 nm period sawtooth grating on (100) Si using a combination of holographic lithography and wet chemical etching. The GaAs layers grown by metalorganic chemical vapor deposition on such substrates exhibit a dramatic reduction in the density of threading misfit dislocations, even when the grown layers are thin. Twins and stacking faults are also reduced dramatically by either in situ thermal‐cycle growth or ex situ rapid thermal annealing.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology

Investigation of SiNX:H/Si interface by capacitance method

Keiji Maeda, Ikurou Umezu, and Akio Kawaguchi

Appl. Phys. Lett. 59, 2421 (1991); http://dx.doi.org/10.1063/1.106035 (3 pages) | Cited 2 times

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A new capacitance method was developed to investigate properties of the SiNX:H/c‐Si interface. By comparison of the frequency dependence of C‐V characteristics of p‐ and n‐type c‐Si substrate sample pairs, flatband voltage for an intrinsic substrate sample can be determined. Analyses of two kinds of frequency dependence, i.e., the variation of voltage at flatband capacitance and the variation of capacitance at flatband voltage, disclose different aspects of the interface state density with respect to the energy level in the band gap, response time, and ionized state. Donor states are predominant in the investigated interface.
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73.20.At Surface states, band structure, electron density of states
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators
73.30.+y Surface double layers, Schottky barriers, and work functions
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