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1 Jul 1991

Volume 59, Issue 1, pp. 1-138

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Separation of intrinsic and extrinsic optical absorption in a fluoride glass

John M. Jewell, Glen M. Williams, James Jaganathan, I. D. Aggarwal, and Paul Greason

Appl. Phys. Lett. 59, 1 (1991); http://dx.doi.org/10.1063/1.105564 (3 pages) | Cited 19 times

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The contribution of impurity ions to the total optical absorption of a heavy metal fluoride glass has been determined at 532 and 1064 nm. Four ZrF4‐BaF2‐LaF3‐AlF3‐NaF glasses were prepared from various purity raw materials. The absorption coefficients of these glasses range from 0.92 to 45.4×10−4 cm−1 at 1064 nm and from 7.43 to 11.1×10−4 cm−1 at 532 nm as determined by laser calorimetry. The concentrations of Fe, Ni, Cu, and Co ions in each glass were determined by graphite furnace atomic absorption spectroscopy. These two measurements enable the absorption, due to transition metal ions to be differentiated from the intrinsic absorption of the glass. At 1064 nm, the absorption coefficient of these glasses is controlled entirely by the transition metal ion content. However, at 532 nm, the absorption by the transition metal ions accounts for 4–42% of the total absorption depending on impurity concentration. The intrinsic absorption of this fluoride glass calculated from these data at 532 nm is (7.69±0.99)×10−4 cm−1.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics
81.05.Kf Glasses (including metallic glasses)
81.65.-b Surface treatments

Photoinduced optical absorption in BaTiO3:Fe

Doyle A. Temple and Cardinal Warde

Appl. Phys. Lett. 59, 4 (1991); http://dx.doi.org/10.1063/1.105575 (3 pages) | Cited 8 times

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Measurements of the steady state photoinduced absorption Δα have been performed on single crystalline samples of pure and iron‐doped BaTiO3. The results show that Δα has a sublinear intensity dependence, similar to that observed in photorefractive grating decay measurements.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.70.-a Optical materials

Parameter ranges for ultrahigh frequency mode locking of semiconductor lasers

J. Palaski and K. Y. Lau

Appl. Phys. Lett. 59, 7 (1991); http://dx.doi.org/10.1063/1.105529 (3 pages) | Cited 21 times

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The inclusion of an intracavity saturable absorber for ultrahigh‐frequency passive mode locking of semiconductor lasers also produces intensity self‐pulsation in many instances. We examined experimentally and theoretically the deleterious effect of self‐pulsation on ultrahigh‐frequency mode locking, and arrived at the conclusion that lasers with high reflectivity coatings can most reliably achieve mode locking without being adversely affected by self‐pulsation.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes

Hot‐carrier thermalization induced self‐phase modulation in semiconductor traveling wave amplifiers

P. J. Delfyett, Y. Silberberg, and G. A. Alphonse

Appl. Phys. Lett. 59, 10 (1991); http://dx.doi.org/10.1063/1.105561 (3 pages) | Cited 30 times

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Pulsewidth dependent self‐phase modulation due to ultrafast (∼1 ps) hot‐carrier thermalization is observed for the first time in semiconductor traveling wave amplifiers. The information obtained from this study may play an important role in applications where simultaneous temporal and spectral characteristics of optical pulses is required.
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78.47.-p Spectroscopy of solid state dynamics
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Complex third‐order phase conjugation nonlinearity of polymeric thin films

Jean Michel Nunzi and Fabrice Charra

Appl. Phys. Lett. 59, 13 (1991); http://dx.doi.org/10.1063/1.105555 (3 pages) | Cited 7 times

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We describe a simple method for measuring magnitude and argument of degenerate four‐wave‐mixing nonlinearities in polymer thin films. It is based on an analysis of phase conjugation response of films interfering with their glass substrate. In evaporated polycrystalline polydiacetylene blue layers, picosecond two‐photon resonant nonlinearity is a function of pump intensity. It increases and undergoes a 30° argument variation between 0.2 and 1 GW/cm2.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
78.66.Qn Polymers; organic compounds
42.25.Hz Interference
78.47.-p Spectroscopy of solid state dynamics

Saturable absorption in intracavity loss modulated quantum well lasers

J. O’Gorman, A. F. J. Levi, T. Tanbun‐Ek, and R. A. Logan

Appl. Phys. Lett. 59, 16 (1991); http://dx.doi.org/10.1063/1.105556 (3 pages) | Cited 7 times

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Voltage, temperature, and intensity dependence of saturable absorption in InGaAs/InP multiple quantum wells are investigated and related to the lasing characteristics of intracavity loss modulated InGaAs/InP quantum well lasers. Bistability in the static laser light output/absorber voltage characteristic arises from the shape of the measured absorption/voltage/intensity surface of the quantum well absorber. This surface is little changed in the temperature range 0–100 °C. A consequence of this fact is that an intracavity absorber modulates laser threshold more efficiently at higher substrate temperatures.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

New nonlinear optical crystal thienylchalcone and its harmonic generation properties

Yasuo Kitaoka, Takatomo Sasaki, Sadao Nakai, and Yoshitaka Goto

Appl. Phys. Lett. 59, 19 (1991); http://dx.doi.org/10.1063/1.105557 (3 pages) | Cited 15 times

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Large single crystals (60×20×8 mm3) of a new nonlinear crystal thienylchalcone (T‐17) were grown from acetone by the falling temperature method and the nonlinear optic properties were determined. The effective nonlinear optical coefficient, the angular acceptance (Δθ,Δϕ), and the walk‐off angle were 7.1 pm/V, 0.053° cm, 1.2° cm1/2, and 3.6°, respectively. Thienylchalcone could be type‐I phase matched for the light of wavelengths longer than 910 nm. It is an attractive nonlinear crystal for generating green and blue lasers.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.-a Optical materials

Over 245 mW 1.3 μm buried ridge stripe laser diodes on n‐substrate fabricated by the reactive ion beam etching technique

N. Bouadma, C. Kazmierski, and J. Semo

Appl. Phys. Lett. 59, 22 (1991); http://dx.doi.org/10.1063/1.105565 (3 pages) | Cited 17 times

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1.3 μm GaInAsP/InP buried ridge stripe lasers have been developed using the reactive ion beam etching process for the realization of the mesa stripe and two‐step metalorganic vapor phase epitaxy technique for the layers growth. A cw output power over 245 mW has been achieved in 500‐μm‐long lasers with front and rear facet reflectivities of 5% and 95%, respectively. Transverse‐mode stability at high output power (100 mW) has been demonstrated. In addition, high reliability has been shown in preliminary high‐power aging experiments.
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42.55.Px Semiconductor lasers; laser diodes

Corrosion protection of aluminum surfaces using pyrolytic tin oxide

Arne Roos and Per Hedenqvist

Appl. Phys. Lett. 59, 25 (1991); http://dx.doi.org/10.1063/1.105566 (3 pages) | Cited 5 times

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Thin films of tin oxide have been pyrolytically deposited on both bulk and evaporated aluminum surfaces. Using optical reflectance spectroscopy it is shown that the chemical stability of tin‐oxide‐coated aluminum is greatly improved compared to uncoated or anodized aluminum. Exposure to sulphuric acid and sodium hydroxide solutions left the tin‐oxide‐coated surfaces unaffected, while uncoated or anodized surfaces were completely dissolved in the solutions.
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81.05.Bx Metals, semimetals, and alloys
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments

Low‐voltage interferometric modulator in zinc‐diffused strontium barium niobate (SBN:60)

O. Eknoyan, V. P. Swenson, J. D. Quinn, and R. R. Neurgaonkar

Appl. Phys. Lett. 59, 28 (1991); http://dx.doi.org/10.1063/1.105567 (3 pages) | Cited 6 times

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Optical waveguides have been produced in Z‐cut Sr0.6Ba0.4Nb2O6 (SBN:6O) by zinc diffusion from vapor phase at 1000 °C for 30 min. Values of 7.3 μm for the diffusion depth and a surface concentration of 4.2×1020 cm −3 for Zn were obtained from an electron microprobe analysis. Electro‐optic modulation at 0.83 μm wavelength has been demonstrated on a Mach–Zehnder interferometer produced by this diffusion technique. An extinction ratio of 78% and a voltage‐length (VL) product of 0.48 V cm for a TM polarized input light were obtained. Prism coupler measurements on planar waveguides diffused at 800 °C for 6 h have shown an effective index increase of 0.025 for the fundamental mode in both TE and TM polarization.
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42.79.Hp Optical processors, correlators, and modulators
42.79.Gn Optical waveguides and couplers
78.20.Jq Electro-optical effects

Efficient continuous wave operation of vertical‐cavity semiconductor lasers using buried‐compensation layers to optimize current flow

M. Orenstein, N. G. Stoffel, A. C. Von Lehmen, J. P. Harbison, and L. T. Florez

Appl. Phys. Lett. 59, 31 (1991); http://dx.doi.org/10.1063/1.105568 (3 pages) | Cited 10 times

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The lateral definition of vertical‐cavity surface‐emitting lasers (VCSELs) using buried ion implantation and the optimization of this process are described. A VCSEL structure was grown, and lasers were laterally defined using deep proton implantation process. The buried implantation process created a funnel shape current path into the laser active region. By optimizing this process, a serial resistance of 50 Ω, 2.1 mW continuous wave output power and a 1 V lower ‘‘turn on’’ voltage were achieved for an optimum dose of 1×1013 ions/cm2 for 10×10 μm2 lasers. These improvements were achieved, while retaining the same low threshold current level of fully confined VCSELs.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Crystal‐field splittings of Er3+(4f11) in molecular beam epitaxially grown ErAs/GaAs

J. Schneider, H. D. Müller, J. D. Ralston, F. Fuchs, A. Dörnen, and K. Thonke

Appl. Phys. Lett. 59, 34 (1991); http://dx.doi.org/10.1063/1.105569 (3 pages) | Cited 6 times

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A detailed infrared‐spectroscopic study is presented of the intra 4f‐shell transitions 4I15/2→4I13/2 of Er3+(4f11), at λ=1.54 μm, in single‐crystal ErAs films deposited on GaAs substrates by molecular beam epitaxy. Using Fourier‐transform infrared absorption spectroscopy crystal‐field splittings of both the 4I15/2 ground state and the first electronically excited state 4I13/2 are observed. Good agreement is found between the measured transition energies and those calculated for 4f11 ions in a crystal field of cubic (Oh) symmetry, as expected for the Er lattice site in unstrained ErAs. From the infrared absorption data, the relevant cubic fourth and sixth‐order crystal field parameters are determined spectroscopically for the first time.
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71.70.Ch Crystal and ligand fields
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Ultralow chirping short optical pulse (16 ps) generation in gain‐coupled distributed feedback semiconductor lasers

Y. Luo, R. Takahashi, Y. Nakano, K. Tada, T. Kamiya, H. Hosomatsu, and H. Iwaoka

Appl. Phys. Lett. 59, 37 (1991); http://dx.doi.org/10.1063/1.105570 (3 pages) | Cited 7 times

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We describe optical short pulse generation in novel gain‐coupled distributed feedback (GC‐DFB) semiconductor lasers by using a simple electrically pumped gain switching method. An optical pulse as short as 16 ps has been obtained from a 130 ps current pulse. The most exciting result is that the lasers keep single longitudinal mode oscillation with very low wavelength chirping (∼0.12 nm) during the gain switching operation. From the optical pulse width and the amount of the wavelength chirping, we have estimated the α parameter of the GC‐DFB laser to be less than 1.6.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Wide channeling beam x‐ray laser

M. Strauss and N. Rostoker

Appl. Phys. Lett. 59, 40 (1991); http://dx.doi.org/10.1063/1.105571 (3 pages)

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A channeling beam x‐ray laser is proposed which is weakly dependent on the channeling length. The scheme is based on applying Bragg reflections to direct the amplified radiation toward a longitudinal cavity direction which is transverse to the beam propagation. This scheme implements a crystal distributed feedback cavity and is restricted to short radiation wavelength of the order of the crystal unit cell dimension.
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42.55.Ah General laser theory
42.55.Vc X- and γ-ray lasers
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
78.70.-g Interactions of particles and radiation with matter

Evidence for a transitory composition pattern in the early stages of the photochemical deposition of silica films on semiconductors

C. Licoppe, C. Meriadec, J. Flicstein, Y. I. Nissim, and A. C. Papadopoulo

Appl. Phys. Lett. 59, 43 (1991); http://dx.doi.org/10.1063/1.105572 (3 pages) | Cited 1 time

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We have studied the early stages of the photodeposition of SiO2 on semiconductors from silane–oxygen gaseous mixtures under UV irradiation. For film thicknesses below 100 Å, the films exhibit a specific oxygen‐deficient composition which become stoichiometric if deposition lasts longer, producing SiO2 films with a homogeneous composition throughout the whole dielectric layer. It is shown that the transitory early deposition regime is structurally sensitive to the nature of the substrate. Cathodoluminescence is used to show that the surface carrier recombination properties are altered mostly during this singular early stage of photodeposition.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.50.-m Photochemistry
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Relaxation modulus and thermal expansion coefficient of polyimide films coated on substrates

Jwo‐Huei Jou and Lih‐Jiuan Chen

Appl. Phys. Lett. 59, 46 (1991); http://dx.doi.org/10.1063/1.105573 (2 pages)

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A bending beam technique with the use of two substrates, silicon and gallium arsenide, has been successfully employed to simultaneously determine the biaxial relaxation modulus, Ef/(1 − νf), and thermal expansion coefficient, αf , of a rigid rod‐like polyimide film, pyromellitic dianhydride‐benzidine (PMDA‐B) coated on a substrate. As measured, the two properties, especially αf , significantly increase with the increase of film thickness. At 150 °C, for example, the obtained Ef(1 − νf) increases from 6.0 to 8.2×109 N/m2, and αf from −0.33 to 2.42×10−6/°C for thicknesses ranging from 10 to 30 μm.
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65.40.De Thermal expansion; thermomechanical effects
61.41.+e Polymers, elastomers, and plastics
62.20.D- Elasticity

Infrared quenching and thermal recovery of thermally stimulated current spectra in GaAs

Z‐Q. Fang and D. C. Look

Appl. Phys. Lett. 59, 48 (1991); http://dx.doi.org/10.1063/1.105574 (3 pages) | Cited 34 times

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Thermally stimulated current (TSC) spectra stimulated by infrared (hν≤1.12 eV) light at 90 K have been used to study the photoquenching and thermal recovery of several dominant TSC peaks in Ga‐rich, semi‐insulating GaAs. The filling‐pulse‐length dependence of the quenching for these traps, and the temperature dependence of their recovery are clearly identified with the ground‐to‐metastable state transition of EL2. The data are consistent with the traps having a direct association with EL2 or EL2∗ rather than an indirect association which could result from a change in the dominant‐free carriers as EL2 transforms to EL2∗. If so, they likely are various point defects or impurities complexed with the arsenic antisite.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.72.J- Point defects and defect clusters
72.40.+w Photoconduction and photovoltaic effects
72.80.Ey III-V and II-VI semiconductors

Fabrication and properties of polycrystalline‐SiC/Si structures for Si heterojunction devices

M. I. Chaudhry and R. L. Wright

Appl. Phys. Lett. 59, 51 (1991); http://dx.doi.org/10.1063/1.105519 (3 pages) | Cited 10 times

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Polycrystalline‐SiC/Si heterojunctions are fabricated by growing n‐type polycrystalline SiC films on p‐type Si substrates using a low‐temperature chemical vapor deposition technique. The heterojunctions show rectification with low leakage currents. The typical value of the ideality factor is 1.2. This study indicates that polycrystalline SiC is a promising material for fabricating Si heterojunction devices.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Estimates of infrared intersubband emission and its angular dependence in GaAs/AlGaAs multiquantum well structures

J.‐W. Choe, A. G. U. Perera, M. H. Francombe, and D. D. Coon

Appl. Phys. Lett. 59, 54 (1991); http://dx.doi.org/10.1063/1.105520 (3 pages) | Cited 6 times

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This letter describes results of a modeling analysis of IR radiative efficiency for cascade‐type quantum well emitter structures, and the angular dependence of spontaneous emission. The radiative decay rates are calculated for different IR wavelength ranges. Estimates of radiative efficiency indicate that the performance of these cascade mode devices in the long‐ and midwavelength infrared range can be comparable to or superior to that reported at far‐infrared range. Based upon calculations of the angular dependence of IR emission, an etched surface grating structure is proposed which should lead to high effective coupling efficiencies.
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85.60.Jb Light-emitting devices
85.30.De Semiconductor-device characterization, design, and modeling
79.60.Dp Adsorbed layers and thin films
79.70.+q Field emission, ionization, evaporation, and desorption
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Stark ladders in strongly coupled GaAs‐AlAs superlattices

Marcos H. Degani

Appl. Phys. Lett. 59, 57 (1991); http://dx.doi.org/10.1063/1.105521 (3 pages) | Cited 22 times

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The energy spectrum of a superlattice in the presence of an electric field is calculated using the split time scheme. It is shown that even for a low field two interpenetrating Stark ladders exist in a GaAs‐AlAs superlattice and the spacing between the energy levels in each of the ladders is eEd. When the external field is increased the number of ladders with the same period eEd is also increased.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
71.15.-m Methods of electronic structure calculations
78.30.Fs III-V and II-VI semiconductors
71.35.-y Excitons and related phenomena

Critical thickness anisotropy in highly carbon‐doped p‐type (100)GaAs layers grown by metalorganic molecular beam epitaxy

T. George, E. R. Weber, S. Nozaki, T. Yamada, M. Konagai, and K. Takahashi

Appl. Phys. Lett. 59, 60 (1991); http://dx.doi.org/10.1063/1.105522 (3 pages) | Cited 13 times

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The formation of misfit dislocations at the (100)GaAs substrate interfaces of thick highly carbon‐doped p‐type GaAs layers grown by metalorganic molecular beam epitaxy, was investigated using x‐ray diffraction and transmission electron microscopy. The misfit dislocation lines were observed to be all aligned along one of the 〈011〉 directions on the substrate and were identified as being ‘β’ type. Enhanced migration of β dislocations in p‐type GaAs coupled with heterogeneous dislocation loop formation at clusters of partially dissociated (CH3)3Ga molecules is proposed as a probable cause of the anisotropy.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.Dv Composition, segregation; defects and impurities

Identification of the misfit dislocations at an FeAl/AlAs/GaAs interface using moiré fringe contrast in a transmission electron microscope

J. E. Angelo, J. N. Kuznia, A. M. Wowchak, P. I. Cohen, and W. W. Gerberich

Appl. Phys. Lett. 59, 63 (1991); http://dx.doi.org/10.1063/1.105523 (3 pages) | Cited 8 times

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Moiré fringe contrast in plan‐view transmission electron microscopy (TEM) is adapted to measure the Burgers vector of misfit dislocations at the interface between FeAl and AlAs. This technique had originally been used to determine the Burgers vector of dislocations in bulk materials. The aluminide was grown by molecular beam epitaxy on AlAs which was pseudomorphic on GaAs(001). The observed misfit dislocations are determined to have [100] and [010] Burgers vectors, as measured in the FeAl, with [010] and [100] line directions, respectively. These are pure edge dislocations which cannot glide on the {110} or {112} slip systems of FeAl. This requires that the misfit dislocations either form at the edges of islands, during three dimensional (3D) growth or by climb from the free surface during two‐dimensional (2D) growth. The TEM results along with in situ reflection high‐energy electron diffraction (RHEED) results show that the growth is indeed 2D which suggests the misfit dislocations must form by dislocation half‐loops climbing from the free FeAl surface.
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07.78.+s Electron, positron, and ion microscopes; electron diffractometers
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.35.Dv Composition, segregation; defects and impurities

Fast escape of photocreated carriers out of shallow quantum wells

J. Feldmann, K. W. Goossen, D. A. B. Miller, A. M. Fox, J. E. Cunningham, and W. Y. Jan

Appl. Phys. Lett. 59, 66 (1991); http://dx.doi.org/10.1063/1.105524 (3 pages) | Cited 63 times

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We report that at room temperature the field‐induced escape of photogenerated carriers out of shallow GaAs/AlxGa1−xAs multiple quantum wells is as fast as for pure GaAs of the same thickness, if the value of x does not exceed 0.04. Our experimental findings can be explained by assuming that carriers are efficiently scattered into the unconfined barrier states by absorption of a LO phonon, as long as the effective barrier height is less than the LO‐phonon energy. The application of shallow quantum wells with x≤0.04 in self‐electro‐optic effect devices, providing not only strong excitonic electroabsorption but also fast sweep‐out times at small biases, should lead to shorter switching times.
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72.20.Fr Low-field transport and mobility; piezoresistance
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Amorphous diamond‐Si semiconductor heterojunctions

Gehan A. J. Amaratunga, Dan E. Segal, and David R. McKenzie

Appl. Phys. Lett. 59, 69 (1991); http://dx.doi.org/10.1063/1.105525 (3 pages) | Cited 57 times

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Tetrahedrally co‐ordinated amorphous carbon (amorphous diamond) deposited from the plasma stream of a vacuum arc on a graphite cathode is demonstrated as having semiconductor properties. The material is shown to form a heterojunction with both p‐ and n‐type Si. A band gap of 2.9 eV is proposed for the a‐diamond, based on the observed I‐V characteristics of the heterojunction diodes. The material has a measured electrical breakdown strength of 109 V/m, which is comparable to that of high quality insulators such as SiO2 and Si3N4. Gas phase doping using B2H6, PH3, and N2 has been attempted.
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85.30.Kk Junction diodes
73.61.Ga II-VI semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.80.Ng Disordered solids

New contactless method for carrier diffusion measurements in silicon with a high precision

Vytautas Grivickas and Jan Linnros

Appl. Phys. Lett. 59, 72 (1991); http://dx.doi.org/10.1063/1.105526 (3 pages) | Cited 6 times

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A novel, contactless transient grating method is demonstrated for excess carrier diffusion coefficient determination at an arbitrarily chosen injection density. The method is based on free‐carrier absorption decay measurements along a grid of carriers excited in the bulk of the sample by a YAG laser pulse. The focused infrared probe beam, with an excess‐carrier detection limit as low as 1012 cm−3, monitors the lateral interdiffusion of carriers by scanning across the carrier grating. Measurements on a 1015 cm−3, p‐doped Si sample at injection levels in the range 1013–1017 cm−3 show a considerable reduction of the carrier diffusion coefficient at injection levels Δn ≥ 1016 cm−3.
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72.80.Jc Other crystalline inorganic semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
07.50.-e Electrical and electronic instruments and components
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