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8 Jul 1991

Volume 59, Issue 2, pp. 141-248

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High Tc bulk superconductor wigglers

Hidenori Matsuzawa, Yoshiharu Ishibashi, Masato Ariizumi, and Hiroshi Saegusa

Appl. Phys. Lett. 59, 141 (1991); http://dx.doi.org/10.1063/1.106000 (2 pages) | Cited 4 times

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In the present letter, high Tc bulk superconductor wigglers were proposed as one of the novel applications of high Tc superconductor lenses (Supertrons). Their operation was also shown experimentally. The bismuth‐based bulk superconductor wiggler had sinusoidal surfaces with a period length of 35 mm and an amplitude of 2 mm. The wiggler deflected intense electron beams of 340 keV, 1 kA, and 10 ns of duration time with an amplitude of about 1.5 mm.
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41.75.Fr Electron and positron beams
84.71.Ba Superconducting magnets; magnetic levitation devices
07.77.-n Atomic, molecular, and charged-particle sources and detectors

Rayleigh backscattering measurement of single‐mode fibers by low coherence optical time‐domain reflectometer with 14 μm spatial resolution

Kazumasa Takada, Ken‐ichi Yukimatsu, Masaru Kobayashi, and Juichi Noda

Appl. Phys. Lett. 59, 143 (1991); http://dx.doi.org/10.1063/1.106408 (3 pages) | Cited 10 times

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An optical time‐domain reflectometer (OTDR) with −136 dB minimum detectable reflectivity and 14 μm spatial resolution is developed based on low coherence interference. The high sensitivity was accomplished by using a high‐power superluminescent diode module with a 1.5 mW fiber output and a new system configuration, both for effectively operating the balanced heterodyne detection. The reflectivity of −136 dB is only 6 dB above the shot noise limit. The first observation of 1.3 μm wavelength Rayleigh backscattering in single‐mode fibers was successfully made by the OTDR with a 17 dB dynamic range and 14 μm spatial resolution.
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42.81.Dp Propagation, scattering, and losses; solitons
42.82.-m Integrated optics
42.87.-d Optical testing techniques
42.81.Gs Birefringence, polarization

Electro‐optic sampling of high‐speed silicon integrated circuits using a GaAs probe tip

Michael S. Heutmaker, George T. Harvey, and Philip F. Bechtold

Appl. Phys. Lett. 59, 146 (1991); http://dx.doi.org/10.1063/1.106001 (3 pages) | Cited 11 times

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Electro‐optic sampling is performed on a high‐speed silicon multiplexer integrated circuit using a gain‐switched semiconductor laser and an external probe tip fabricated from GaAs. An approximate electrostatic model is used to calculate the dependence of the electro‐optic modulation on the height of the probe tip above the circuit, the geometry of the circuit, and the dielectric constants of the probe tip material and the passivation layer (if any) on the circuit. The measured variation of the electro‐optic modulation with probe tip height is in good agreement with the prediction of the model.
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85.40.Qx Microcircuit quality, noise, performance, and failure analysis
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
07.50.-e Electrical and electronic instruments and components
85.60.-q Optoelectronic devices

High‐temperature operation of high‐power InGaAlP visible light laser diodes with an In0.5+δGa0.5−δP active layer

K. Nitta, K. Itaya, Y. Nishikawa, M. Ishikawa, M. Okajima, and G. Hatakoshi

Appl. Phys. Lett. 59, 149 (1991); http://dx.doi.org/10.1063/1.106002 (3 pages) | Cited 6 times

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High‐power and high‐reliable operation of transverse‐mode stabilized InGaAlP laser diodes has been achieved by a selectively buried ridge waveguide structure with a thin (0.02 μm) active layer. A composition‐shifted In0.5+δGa0.5−δP active layer was employed in order to improve the temperature characteristic. A maximum cw light output power of 54 mW was obtained for the laser with antireflection and high‐reflection coatings. A high‐power cw operation above 30 mW output power was maintained even at a 60 °C heat‐sink temperature. Stable cw operation exceeding 1000 h has been achieved for 20 mW output power at 50 °C.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Nd3+ incorporation in CaF2 layers grown by molecular beam epitaxy

L. E. Bausá, R. Legros, and A. Muñoz‐Yagüe

Appl. Phys. Lett. 59, 152 (1991); http://dx.doi.org/10.1063/1.106003 (3 pages) | Cited 18 times

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Molecular beam epitaxy of Nd3+‐doped CaF2 monocrystalline layers on CaF2 substrates is demonstrated. Nd concentration is controlled by the temperature of an evaporation cell containing NdF3. Photoluminescence spectra of the samples show emissions from Nd3+ centers in tetragonal symmetry sites as a consequence of the charge compensation mechanism provided by interstitial F− ions.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
42.55.Rz Doped-insulator lasers and other solid state lasers
61.72.up Other materials

Electro‐optics of electrically controlled birefringence liquid‐crystal displays by 2×2 propagation matrix and analytic expression at oblique angle

Hiap Liew Ong

Appl. Phys. Lett. 59, 155 (1991); http://dx.doi.org/10.1063/1.106004 (3 pages) | Cited 14 times

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A new 2×2 propagation matrix for obliquely propagating light is used to compute the electro‐optics of an electrically controlled birefringence liquid‐crystal display, with arbitrary viewing angle. The results are the same as those obtained by the generalized geometrical optics approximation and are in good agreement with those computed by the 4×4 propagation matrix. By approximating the liquid‐crystal medium as a homogeneous medium with a field‐dependent orientation, a simple analytic expression is obtained for describing the optical transmission. The computed electro‐optical transmissions at oblique angle show a good agreement between the simple formula and the full computation having the liquid crystal divided into 500 sublayers.
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61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
42.25.Bs Wave propagation, transmission and absorption
42.25.Dd Wave propagation in random media
78.20.Jq Electro-optical effects
78.20.Fm Birefringence

Enhanced preferential sputtering of a hydrogenated barium surface

R. M. A. Heeren, D. Ćirić, H. J. Hopman, and A. W. Kleyn

Appl. Phys. Lett. 59, 158 (1991); http://dx.doi.org/10.1063/1.106005 (3 pages) | Cited 7 times

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We have observed a substantial decrease in barium sputter yield as a function of exposure time when a barium surface is bombarded with an intense flux of positive hydrogen or deuterium ions, extracted from a plasma. This effect is attributed to an increase of surface hydrogen concentration which results in enhanced preferential sputtering of hydrogen surface atoms. The sputtering process is observed by means of optical emission spectroscopy. Whenever the surface is saturated with hydrogen, the sputtered barium yield is constant in time, and scales with the sputter coefficient, which is dependent on the energy of the incident ions. The relative decrease of the sputtered barium yield is shown to scale with the incident positive ion current density as the saturation concentration depends on this current density.
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52.40.Hf Plasma-material interactions; boundary layer effects
52.50.Dg Plasma sources
66.30.J- Diffusion of impurities

Negative and positive ions from radio frequency plasmas in boron trichloride

L. J. Overzet and L. Luo

Appl. Phys. Lett. 59, 161 (1991); http://dx.doi.org/10.1063/1.106006 (3 pages) | Cited 14 times

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The negative and positive ion mass spectra from radio frequency glow discharges in boron trichloride and 90% argon‐10% boron trichloride mixtures have been investigated by amplitude modulation of the discharge excitation. The negative ion spectrum from pure boron trichloride was found to extend beyond 200 amu under most conditions even though positive ions above 120 amu were not detected under any conditions. Surprisingly, only trace signals of BCl−3 were found from the discharges, while the signals from Cl−, BCl−4, B2Cl−4, and B2Cl−5 were much larger. We were unable to detect either positive or negative ions above 120 amu from 10% boron trichloride discharges.
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52.70.Nc Particle measurements
52.80.Hc Glow; corona
52.25.Tx Emission, absorption, and scattering of particles

Stopping of 10–50 keV positrons in aluminum

J. A. Baker, N. B. Chilton, and P. G. Coleman

Appl. Phys. Lett. 59, 164 (1991); http://dx.doi.org/10.1063/1.106007 (3 pages) | Cited 18 times

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We report on new observations of positron stopping in a series of Al foils mounted on glass backplates for incident energies E in the range 10–50 keV. The measured median penetration depths for E≳30 keV are found to differ significantly from values derived from the empirical power law model of A. P. Mills, Jr. and R. J. Wilson [Phys. Rev. A 26, 490 (1982)]. The associated disparity between the measured implantation profiles and their analytic representations, and the consequent implications for defect profiling analysis, are discussed.
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72.10.Bg General formulation of transport theory
29.40.-n Radiation detectors
78.70.Bj Positron annihilation
79.20.Kz Other electron-impact emission phenomena

Polish‐induced surface damage in nickel: Scanning acoustic microscopy and Brillouin scattering study

S. Sathish, M. Mendik, A. Kulik, G. Gremaud, and P. Wachter

Appl. Phys. Lett. 59, 167 (1991); http://dx.doi.org/10.1063/1.106008 (2 pages) | Cited 2 times

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The angular dispersion of surface acoustic wave velocities on {100} planes of a nickel single crystal has been measured using continuous wave scanning acoustic microscope and Brillouin scattering. This dispersion is used to calculate the elastic constants. They are compared with bulk ultrasonic measurements performed on the same sample. Systematic differences have been observed in elastic constants and anisotropy. These are attributed to surface damage due to mechanical polishing of the specimen.
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81.05.Bx Metals, semimetals, and alloys
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
43.35.Pt Surface waves in solids and liquids
68.35.Gy Mechanical properties; surface strains

Low‐frequency magnetic field mixing near period doubling bifurcation of a fiber‐optic magnetometer

S. T. Vohra and F. Bucholtz

Appl. Phys. Lett. 59, 169 (1991); http://dx.doi.org/10.1063/1.106009 (3 pages)

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A magnetically driven magnetostrictive sample, which is used as the sensing element in a fiber‐optic magnetometer, is known to exhibit strain bifurcations. Standard techniques for fiber‐optic magnetostrictive magnetometers employ demodulation at a carrier frequency ωc but, typically, the resolution is limited by 1/f noise around ωc. We present a novel technique for the detection of low‐frequency magnetic signals which employs the frequency associated with a period doubling bifurcation ωc/2, and which avoids upconverted 1/f noise near ωc. The signal‐to‐noise ratio of low‐frequency magnetic signals near ωc/2 remains flat in the range 0.025–10 Hz, with a resolution of 5 nT/√Hz for a sensor using only 5 mm of fiber, limited by the phase noise of the fiber interferometer.
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85.70.Sq Magnetooptical devices
07.55.-w Magnetic instruments and components
78.20.Ls Magneto-optical effects
42.81.Pa Sensors, gyros

Field‐effect conductance activation energy in an undoped polycrystalline silicon thin‐film transistor

C. A. Dimitriadis, N. A. Economou, and P. A. Coxon

Appl. Phys. Lett. 59, 172 (1991); http://dx.doi.org/10.1063/1.106010 (3 pages) | Cited 19 times

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We investigate the temperature dependence of the field‐effect (FE) conductance of thin‐film transistors on undoped polycrystalline silicon layers. The FE conductance is thermally activated at a fixed gate voltage. The conductance prefactor G0 increases exponentially with the FE activation energy Ea, in accordance with the Meyer–Neldel rule. Using these results, a model of exponentially decaying band tails explains the FE activation energy data. By fitting the FE activation energy data with the theory, we determine the trap distribution in polysilicon layers deposited at various pressures. The results indicate that the existence of band tails is not an intrinsic property of grain boundaries.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Activation energy for electromigration in Cu films

C. W. Park and R. W. Vook

Appl. Phys. Lett. 59, 175 (1991); http://dx.doi.org/10.1063/1.106011 (3 pages) | Cited 52 times

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Copper is a possible substitute for Al in very large scale integration interconnects because of its higher resistance to electromigration damage (EMD) and its lower electrical resistivity. In the present work, we report on electrical resistance measurements of the activation energy for EMD in Cu films as determined by an isothermal annealing method carried out under high vacuum conditions. Temperature measurement and control were accomplished by means of a Cu thin‐film thermistor. The activation energy for EMD of evaporated Cu films was found to be 0.79±0.02 eV.
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66.30.Qa Electromigration
85.40.Ls Metallization, contacts, interconnects; device isolation
81.40.Rs Electrical and magnetic properties related to treatment conditions

Kinetics of silicon‐germanium deposition by atmospheric‐pressure chemical vapor deposition

T. I. Kamins and D. J. Meyer

Appl. Phys. Lett. 59, 178 (1991); http://dx.doi.org/10.1063/1.105986 (3 pages) | Cited 31 times

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The deposition of Si1−xGex alloy layers in an atmospheric‐pressure, chemical vapor deposition reactor has been studied by separately examining the silicon and the germanium components of the deposition rate. The overall deposition rate increases approximately linearly with GeH4 partial pressure, but is relatively independent of SiH2Cl2 partial pressure. The silicon component of the deposition rate increases rapidly with increasing temperature for a constant germanium content, but the germanium component changes only slowly above about 675 °C, and is probably limited by mass transport.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
85.40.Hp Lithography, masks and pattern transfer
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Population inversion through resonant interband tunneling

Rui Q. Yang and J. M. Xu

Appl. Phys. Lett. 59, 181 (1991); http://dx.doi.org/10.1063/1.105987 (2 pages) | Cited 21 times

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We show in this letter that population inversion between subbands in a quantum well can be achieved through resonant interband tunneling. Two basic device configurations based on polytype heterostructures are proposed and analyzed. The estimated population inversion (n2−n1) could be as high as 3×1011/cm2 with a moderate injected current density 104 A/cm2 under a forward bias.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
85.60.Dw Photodiodes; phototransistors; photoresistors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
79.60.Dp Adsorbed layers and thin films
79.70.+q Field emission, ionization, evaporation, and desorption

Application of oxidation to the structural characterization of SiC epitaxial films

J. A. Powell, J. B. Petit, J. H. Edgar, I. G. Jenkins, L. G. Matus, W. J. Choyke, L. Clemen, M. Yoganathan, J. W. Yang, and P. Pirouz

Appl. Phys. Lett. 59, 183 (1991); http://dx.doi.org/10.1063/1.105960 (3 pages) | Cited 20 times

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Both 3C‐SiC and 6H‐SiC single‐crystal films can be grown on vicinal (0001) 6H‐SiC wafers. We have found that oxidation can be a powerful diagnostic process for (1) ‘‘color mapping’’ the 3C and 6H regions of these films, (2) decorating stacking faults in the films, (3) enhancing the decoration of double positioning boundaries, and (4) decorating polishing damage. Contrary to previously published oxidation results, proper oxidation conditions can yield interference colors that provide a definitive map of the polytype distribution for both the Si face and C face of SiC films. Defects were more effectively decorated by oxidation on the Si face than on the C face.
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81.65.-b Surface treatments
78.66.-w Optical properties of specific thin films
68.55.Nq Composition and phase identification
61.72.Nn Stacking faults and other planar or extended defects

Substantial improvement by substrate misorientation in dc performance of Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As double‐heterojunction NpN bipolar transistors grown by molecular beam epitaxy

Naresh Chand, Paul R. Berger, and Niloy K. Dutta

Appl. Phys. Lett. 59, 186 (1991); http://dx.doi.org/10.1063/1.105961 (3 pages) | Cited 5 times

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Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As NpN double‐heterojunction bipolar transistors have been grown simultaneously by molecular beam epitaxy on (100) and 3° off (100) towards 〈111〉A GaAs substrates. On the tilted substrate, the current gain is significantly higher, comparable to the maximum expected value, with a marked reduction of its dependence on current and device geometry. For 10 μm×40 μm emitter devices, maximum common emitter current gains (β) of 1630 and 725 were measured at a current density of ∼6.3 kA/cm2 on the tilted and flat substrates, respectively. On the tilted substrate, both the emitter injection efficiency and base transport factor are increased. We have used compositionally graded emitter‐base (e‐b) and abrupt base‐collector (b‐c) junctions. We find that the abrupt b‐c junction does not result in an offset voltage but certainly reduces the electron collection efficiency, and hence the gain, in the region where it is forward biased. The device characteristics and the current gain on both substrates were essentially independent of temperature between 25 and 100 °C, except for a slight decrease of gain with increasing temperature.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.61.Ey III-V semiconductors
85.30.Pq Bipolar transistors
68.60.Dv Thermal stability; thermal effects

Beryllium foil transition‐radiation source for x‐ray lithography

M. A. Piestrup, D. G. Boyers, C. I. Pincus, J. L. Harris, H. S. Caplan, R. M. Silzer, and D. M. Skopik

Appl. Phys. Lett. 59, 189 (1991); http://dx.doi.org/10.1063/1.105962 (3 pages) | Cited 10 times

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We have measured the total soft‐x‐ray power from a transition radiator composed of a stack of 25 beryllium foils each 1.0 μm thick which were penetrated by a relativistic electron beam whose maximum power was approximately 7 kW. The maximum total soft‐x‐ray power was measured to be 15.2 mW for a 245 MeV, 37 μA electron beam. The bandwith of the radiation at the full width half maximum points was calculated to be between 0.6 and 1.6 keV. In addition, we have exposed photoresist‐coated silicon wafers at a distance of 3 m from the radiator. Exposure times of the bare resist were as short as 120 s for 5 cm2 of wafer are (resist sensitivity is 55.6 mJ/cm2). The shortest time for mask/wafer exposure was 180 s for 5 cm2.
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85.40.Hp Lithography, masks and pattern transfer
78.70.-g Interactions of particles and radiation with matter
07.85.-m X- and γ-ray instruments

Monte Carlo particle simulation of radiation‐induced heating in GaAs field‐effect transistors

C. Moglestue, F. A. Buot, and W. T. Anderson

Appl. Phys. Lett. 59, 192 (1991); http://dx.doi.org/10.1063/1.105963 (3 pages) | Cited 1 time

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Exposure of GaAs field‐effect transistors to α‐particle radiation has resulted in burnout paths from under the gate to both the source and the drain. Monte Carlo calculations show that the current response from an α‐particle penetrating the center of the gate electrode at normal incidence lasts for 60 ps, about five times longer than predicted by previous hydrodynamic modeling. The thermalization of the induced electrons causes a maximum subsurface heating of the epilayer near the source and the drain when both are held at ground with a negative bias on the gate. A possible melting of the semiconductor will take place at these locations. We present here for the first time a more accurate simulation of the actual lattice heating rates obtained from electron‐phonon exchanges inside the device. Although the qualitative results support the previous hydrodynamic analysis, some important quantitative differences are noted.
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85.30.Tv Field effect devices
61.80.Jh Ion radiation effects
85.30.De Semiconductor-device characterization, design, and modeling

Record high recombination lifetime in oxidized magnetic Czochralski silicon

S. K. Pang and A. Rohatgi

Appl. Phys. Lett. 59, 195 (1991); http://dx.doi.org/10.1063/1.106407 (3 pages) | Cited 22 times

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This letter demonstrates that recombination lifetimes in excess of 5 ms can be achieved in the oxidized magnetic Czochralski (MCZ) silicon by a combination of high‐purity crystal growth, proper cleaning and oxidation conditions. Lifetime studies were conducted at room temperature on as‐grown as well as oxidized 2000 Ω cm low oxygen (∼5 ppm) MCZ silicon by an injection sensitive, contactless photoconductive decay technique with controlled injected carrier densities up to 1017 cm−3. Record Shockley–Read–Hall lifetimes of 8.5 and 6.6 ms were achieved in the as‐grown and oxidized MCZ wafers, respectively. However, oxidized Czochralski (CZ) silicon with 14.2 ppm oxygen gave lifetime of only 200 μs due to much higher concentrations of as‐grown and process‐induced defects. Lifetime versus injection level analysis gave ambipolar Auger recombination C coefficient of 1.1×10−30 (±9%) cm6 s−1 before and after the oxidation in both MCZ and CZ silicon. Unlike the C coefficient, the B coefficient (radiative band‐to‐band + trap‐assisted Auger) in low‐oxygen MCZ silicon was found to be four times smaller than the value in high oxygen CZ silicon.  
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
71.55.Ht Other nonmetals

High hydrogen concentrations produced by segregation into p+ layers in silicon

A. D. Marwick, G. S. Oehrlein, and M. Wittmer

Appl. Phys. Lett. 59, 198 (1991); http://dx.doi.org/10.1063/1.105964 (3 pages) | Cited 11 times

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Gallium‐implanted p+ layers in Si were exposed to atomic hydrogen from a plasma. It was found that very large hydrogen concentrations, up to 7.5 times larger than the peak Ga concentration of 7×1019/cm3, segregated into the p+ layer during treatment at 200 °C. The shape of the hydrogen concentration profile was similar to that of the Ga profile. Ion channeling showed that the H atoms did not occupy simple high‐symmetry sites in the lattice, and electron microscopy revealed the presence of extended {111} stacking fault defects associated with the layer of high hydrogen concentration. A mechanism to account for these findings is suggested.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
66.30.J- Diffusion of impurities
64.75.-g Phase equilibria
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties

Multi‐gigahertz‐bandwidth intensity modulators using tunable‐electron‐density multiple quantum well waveguides

J. E. Zucker, K. L. Jones, M. Wegener, T. Y. Chang, N. J. Sauer, M. D. Divino, and D. S. Chemla

Appl. Phys. Lett. 59, 201 (1991); http://dx.doi.org/10.1063/1.105965 (3 pages) | Cited 12 times

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We report the first measurement of modulation bandwidth in electron transfer quantum well modulators. A device with 1 pF capacitance provides ≳10 dB optical modulation depth at 1.537 μm wavelength with a 3 dB electrical bandwidth of 5.7 GHz. Optical pump‐probe measurements indicate that the fundamental response time is determined by the voltage‐dependent speed of carrier escape from the well.
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42.79.Hp Optical processors, correlators, and modulators
85.60.-q Optoelectronic devices

Low‐temperature homoepitaxy on Si(111)

B. E. Weir, B. S. Freer, R. L. Headrick, D. J. Eaglesham, G. H. Gilmer, J. Bevk, and L. C. Feldman

Appl. Phys. Lett. 59, 204 (1991); http://dx.doi.org/10.1063/1.105966 (3 pages) | Cited 32 times

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We have compared ion channeling results with molecular dynamics simulations to investigate low‐temperature molecular beam homoepitaxy on silicon. We report the temperature dependence, rate dependence, and thickness dependence of films grown on Si(111). For 350 Å films, a transition to good crystalline quality is seen in ion channeling at growth temperatures of ≊400 °C; this is compared to ≊100 °C for (100) epitaxy. The evolution of surface microstructure leading to breakdown of epitaxial growth at low temperatures is discussed.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.60.Wm Other nonelectronic physical properties

Improvements in the heteroepitaxy of GaAs on Si by incorporating a ZnSe buffer layer

M. K. Lee, R. H. Horng, D. S. Wuu, and P. C. Chen

Appl. Phys. Lett. 59, 207 (1991); http://dx.doi.org/10.1063/1.105967 (3 pages) | Cited 10 times

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Heteroepitaxy of GaAs on Si with a ZnSe interlayer by low‐pressure metalorganic chemical vapor deposition is reported. The structural and electrical properties of the GaAs epilayers grown on ZnSe/Si substrates were found to be superior to those of the GaAs directly on Si. The surface dislocation density of the GaAs/ZnSe/Si film can be reduced to 2×105 cm−2, which is one order of magnitude lower than that of GaAs/Si. The planar Schottky diode fabricated on the GaAs/ZnSe/Si sample shows a reverse breakdown voltage as high as 30 V, whereas the diode on GaAs/Si has a breakdown voltage of about 12 V. In addition, the residual stress in the GaAs heteroepilayers calculated from photoluminescence peak shifts was 8.2×108 dyn/cm2 for the GaAs/ZnSe/Si structure, as compared to 2.7×109 dyn/cm2 for the GaAs directly on Si. This indicates that the ZnSe intermediate layer is also effective in reducing the residual stress in the GaAs film grown on Si.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Molecular beam epitaxy of GaAs on Si‐on‐insulator

Wenhua Zhu, Yuehui Yu, Chenglu Lin, Aizhen Li, Shichang Zou, and P. L. F. Hemment

Appl. Phys. Lett. 59, 210 (1991); http://dx.doi.org/10.1063/1.105968 (3 pages)

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Epitaxial GaAs films have been grown by molecular beam epitaxy (MBE) on Si‐on‐insulator (SOI) formed by ion beam synthesis. Rutherford backscattering and channeling, x‐ray double‐crystal diffraction, and infrared reflection measurements have been used to characterize the epitaxial GaAs films. Experimental results show that the crystal quality of the GaAs films improves markedly towards the GaAs surface for thicker films where the minimum channeling yield drops to 10%. Infrared reflection spectra prove that crystalline GaAs films have been deposited on the SOI structures. Refractive index profiles of the GaAs films on SOI structures can be obtained by computer fitting the interference spectra. The results indicate that the crystal quality of these GaAs films is comparable to similar GaAs films deposited directly on Si by MBE.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.40.Ty Semiconductor-insulator-semiconductor structures
61.72.uf Ge and Si
78.30.Fs III-V and II-VI semiconductors
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