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11 Nov 1991

Volume 59, Issue 20, pp. 2483-2617

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Phase‐noise and shot‐noise limited operations of low coherence optical time domain reflectometry

K. Takada, A. Himeno, and K. Yukimatsu

Appl. Phys. Lett. 59, 2483 (1991); http://dx.doi.org/10.1063/1.105981 (3 pages) | Cited 17 times

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This letter shows theoretically and experimentally that Fresnel end reflection of the waveguide under test degrades the sensitivity of low coherence optical time domain reflectometry (OTDR). Optical mixing of end reflection and reference light in the OTDR produces the phase noise in proportion to end reflectivity. With the balanced detection technique, the excess photon noise is subdued and the phase noise becomes the dominant source of sensitivity degradation. At 3.2% end reflection and 300 μA mean photocurrent, the noise floor due to the phase noise is −138 dB/Hz. By reducing the fiber end reflection with matching oil, a shot‐noise limited sensitivity of −140 dB at a 3 Hz bandwidth has been demonstrated at submillimeter resolution.
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42.81.Cn Fiber testing and measurement of fiber parameters
07.60.Hv Refractometers and reflectometers
42.82.-m Integrated optics
42.87.-d Optical testing techniques

Very low threshold current density 1.5 μm GaInAs/AlGaInAs graded‐index separate‐confinement‐heterostructure strained quantum well laser diodes grown by organometallic chemical vapor deposition

A. Kasukawa, R. Bhat, C. E. Zah, M. A. Koza, and T. P. Lee

Appl. Phys. Lett. 59, 2486 (1991); http://dx.doi.org/10.1063/1.105982 (3 pages) | Cited 23 times

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Very low threshold current densities of 200 and 400 A/cm2 were obtained in 1.5 μm GaInAs/AlGaInAs tensile and compressive strained‐layer quantum well laser diodes (SL‐QW LDs), grown by organometallic chemical vapor deposition, with continuously graded‐index separate‐confinement‐heterostructure. The differential quantum efficiency of SL‐QW LDs showed less sensitive to temperature in contrast to that of a lattice matched QW LD. This is attributed to the decrease of intervalence band absorption due to the strain‐induced reduction in the valence band density of state. The polarization of output power for a tensile SL‐QW LD showed transverse magnetic (TM) mode, while that for a lattice matched and a compressive SL‐QW LDs showed transverse electric (TE) mode.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Generation of pulse trains in the normal dispersion regime of a dielectric medium with a relaxing nonlinearity

Jose M. Soto‐Crespo and Ewan M. Wright

Appl. Phys. Lett. 59, 2489 (1991); http://dx.doi.org/10.1063/1.105983 (3 pages) | Cited 4 times

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We show that modulation‐type instability can occur in the normal dispersion regime of a dielectric medium for the case of a relaxing self‐focusing nonlinearity. This instability leads to the generation of pulse trains with almost no pedestal when periodic boundary conditions are applied.
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42.81.Dp Propagation, scattering, and losses; solitons
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Time‐ and frequency‐resolved measurements of frequency modulation and switching of a tunable semiconductor laser

M. Kuznetsov, J. Stone, and L. W. Stulz

Appl. Phys. Lett. 59, 2492 (1991); http://dx.doi.org/10.1063/1.105984 (3 pages) | Cited 4 times

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We report measurements of intensity as a function of both time and frequency for frequency modulation and switching of a tunable semiconductor laser. Because of the uncertainty principle limitations, the measured time‐frequency signal can have a complex structure and does not show the simple‐minded picture of a laser spectrum whose center frequency varies in time. The observations are explained by a theory of the time‐dependent spectral measurements, well known in the field of speech analysis. We discuss implications for channel switching speed and channel interference in switched, frequency‐multiplexed optical networks.
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42.60.Fc Modulation, tuning, and mode locking
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.55.Px Semiconductor lasers; laser diodes
07.60.-j Optical instruments and equipment

Modification of nonlinear optical response in Langmuir–Blodgett films by ultraviolet laser‐induced bleaching

H. Hsiung

Appl. Phys. Lett. 59, 2495 (1991); http://dx.doi.org/10.1063/1.105985 (3 pages) | Cited 1 time

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Permanent modifications of the second‐order nonlinear susceptibility χ(2)(−2ω;ω,ω) of certain Langmuir–Blodgett (LB) films can be induced photochemically by local irradiation with UV laser light, with the spatial resolution limited only by the laser spot size. In a LB film consisting of alternating monolayers of poly[N‐(p‐perfluorodecylsulfonylphenyl)‐L‐prolinol acrylate] and a ‘‘buffer’’ polymer, the kinetics of the laser bleaching process, as studied by optical second‐harmonic generation, is found to be first order. The generation of a ‘‘χ(2)‐grating’’ in the LB film is also demonstrated.
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78.66.Qn Polymers; organic compounds
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
82.50.-m Photochemistry

Generation of TE12 mode from cyclotron resonance maser driven by nonadiabatic electrostatically pumped electron beam

I. Yovchev, I. Spassovsky, N. Nikolov, K. Kostov, J. Velichkov, V. Spassov, and O. Loza

Appl. Phys. Lett. 59, 2498 (1991); http://dx.doi.org/10.1063/1.105954 (3 pages) | Cited 1 time

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Intense emission of the TE12 mode has been detected in an experiment based on the cyclotron resonance maser mechanism with nonadiabatic electrostatic pumping of an electron beam. The pitch‐ratio α of beam electrons has been found experimentally and estimated from a computer simulation. Both results are in good agreement with each other.  
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84.40.Ik Masers; gyrotrons (cyclotron-resonance masers)
84.47.+w Vacuum tubes

Second‐harmonic generation at the Al and Cu surfaces for the fundamental wavelength of λ=532 nm

G. Petrocelli, S. Martellucci, F. Scudieri, and A. Agostini

Appl. Phys. Lett. 59, 2501 (1991); http://dx.doi.org/10.1063/1.105959 (3 pages)

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The angular dependence of the second‐harmonic (SH) generation efficiency at the copper and aluminum surfaces has been measured. In aluminum the bulk and the parallel surface nonlinear polarization gives the main contribution to the SH generation. In copper the normal surface nonlinear polarization contributes significantly to the SH generation.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.66.Bz Metals and metallic alloys

High‐performance latchable optical switch and logic gates based on the integration of surface‐emitting lasers and photothyristors

Ping Zhou, Julian Cheng, C. F. Schaus, S. Z. Sun, C. Hains, K. Zheng, A. Torres, D. R. Myers, and G. A. Vawter

Appl. Phys. Lett. 59, 2504 (1991); http://dx.doi.org/10.1063/1.105934 (3 pages) | Cited 4 times

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Latching optical switches and cascadable optical logic gates and and or are demonstrated by the monolithic integration of a vertical‐cavity surface‐emitting laser with heterojunction photothyristors. Excellent optical switching characteristics, including low switching power (tens of nW), high optical gain (≳104), and a large on/off ratio, have been achieved.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
85.60.-q Optoelectronic devices
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Realignment of As doped polycrystalline Si films by double step annealing

F. Benyaïch, F. Priolo, E. Rimini, C. Spinella, and P. Ward

Appl. Phys. Lett. 59, 2507 (1991); http://dx.doi.org/10.1063/1.105935 (3 pages) | Cited 6 times

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The realignment by rapid thermal annealing of polycrystalline silicon layers deposited onto 〈100〉 Si substrates can occur either through the planar movement of the interface towards the surface or through the lateral growth of columnar epitaxial islands. An anneal at 1075 °C for 15 s, followed by As implantation, is shown to cause planar growth even at subsequent anneal temperatures as low as 900 °C. In contrast, the direct annealing of As implanted samples induces columnar realignment. Further, the As redistribution throughout the polycrystalline layers and its diffusion in the crystalline substrate is considerably reduced in the case of the double step annealing. The different regrowth modes are related to the morphology of the interfacial oxide layer and to the microcrystalline structure of the polycrystalline layers during the initial stages of the realignment process.
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81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
61.43.Fs Glasses
61.43.-j Disordered solids
61.44.Br Quasicrystals
68.55.-a Thin film structure and morphology
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Fe‐P‐B ultrafine amorphous particles produced by chemical reduction

Jianyi Shen, Zheng Hu, Yuanfu Hsia, and Yi Chen

Appl. Phys. Lett. 59, 2510 (1991); http://dx.doi.org/10.1063/1.105936 (2 pages) | Cited 6 times

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A new kind of ultrafine amorphous particles Fe82P11B7 have been successfully prepared by the reaction of Fe(III) chloride, sodium hypophosphite and potassium borohydride in aqueous solution. X‐ray diffraction and Mössbauer spectroscopy confirmed the amorphous structure of the particles and scanning electron microscopy showed that the particles are nearly spherical with the diameters from 150 to 350 nm. The structure relaxation and crystallization of the amorphous particles were also studied by Mössbauer spectroscopy. It is found that the particles began to crystallize when annealed at 573 K, below which, no crystalline phases were formed, but the amorphous structure significantly varied. The particles crystallized to form α‐Fe and Fe3(P0.6B0.4) completely when annealed at 673 and 773 K.
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61.43.Fs Glasses
61.43.-j Disordered solids
61.44.Br Quasicrystals
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
81.05.Rm Porous materials; granular materials

Study on quasiperiodic Ta/Al multilayer films by x‐ray diffraction

R. W. Peng, A. Hu, and S. S. Jiang

Appl. Phys. Lett. 59, 2512 (1991); http://dx.doi.org/10.1063/1.105937 (3 pages) | Cited 13 times

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Quasiperiodic (Fibonacci) Ta/Al multilayer films with Ta(110) and Al(111) textures were fabricated by magnetron sputtering. The structure of the multilayers was characterized in detail by x‐ray diffraction. The diffraction peaks at low and high angles can be indexed by the projection method from the high‐dimension periodic structure. The experimental results were in good agreement with the numerical calculation using the model for the compositionally modulated multilayers. The diffraction spectrum of the quasiperiodic Ta/Al multilayers is totally different from that of periodic structure, and the possible application of Fibonacci films as optical elements in a soft x‐ray region is discussed.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
61.66.Bi Elemental solids
81.15.Cd Deposition by sputtering

Formation of defect clusters in electron‐irradiated diamond at 16 and 87 K

J. Koike, T. E. Mitchell, and D. M. Parkin

Appl. Phys. Lett. 59, 2515 (1991); http://dx.doi.org/10.1063/1.105938 (3 pages) | Cited 10 times

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A type IIa natural diamond was irradiated with 300 kV electrons at 16 and 87 K. Transmission electron microscopy and electron energy‐loss spectroscopy were employed to investigate the phase stability of diamond under electron irradiation. At both temperatures, the diamond structure was found to be stable, and the formation of defect clusters was observed. The present results in comparison to previous work on ion implantation indicate that displacement cascade damage is a prerequisite for irradiation‐induced phase transformation from diamond to amorphous carbon or graphite. The temperature dependence of the cluster size suggests that interstitials are thermally mobile above 50 K.
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61.80.Fe Electron and positron radiation effects
61.72.-y Defects and impurities in crystals; microstructure
64.70.K- Solid-solid transitions

Solid phase epitaxial seed for laser‐crystallized silicon on glass substrates

Atsutoshi Doi, Masa‐ichi Kumikawa, Jyun‐ichi Konishi, and Yoshiyuki Nakamizo

Appl. Phys. Lett. 59, 2518 (1991); http://dx.doi.org/10.1063/1.105939 (3 pages) | Cited 2 times

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A new method for obtaining thin silicon film on glass substrates (SOG) has been introduced. This technique uses solid phase epitaxy (SPE) and laser crystallization to fabricate an orientation‐controlled SOG structure. Heat treatment of amorphous SOG substrate in contact with mesa striped (100)‐oriented Si seed crystal was performed at 543 °C for 16 h to form the SPE layer. The most important feature of the present external seeding technique is the separation of the seed from the substrate after SPE. Successful demonstration of seeded laser crystallization shows the usefulness of the external seed SPE.
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81.15.Np Solid phase epitaxy; growth from solid phases
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)

Temperature dependence of the sticking probability and molecular size of the film growth species in an atmospheric chemical vapor deposition process to form AlN from AlCl3 and NH3

H. J. Kim, Y. Egashira, and H. Komiyama

Appl. Phys. Lett. 59, 2521 (1991); http://dx.doi.org/10.1063/1.106406 (3 pages) | Cited 20 times

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The sticking probability and molecular size of the growth species were determined as a function of deposition temperature ranging from 700 to 950 °C, in the AlN films prepared from AlCl3 and NH3. A novel method was developed, that includes the measurement of the film thickness profile on micron‐sized trenches and the molecular diffusivity of the growth species. The molecular size was about 1 nm at 700–850 °C and decreased gradually with increasing temperature. The sticking probability increased from 0.02 to 0.5 in the temperature range 700–950 °C and, surprisingly, obeyed the Arrhenius law in spite of this large probability of sticking. The activation energy amounted to 136 kJ/mol.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Stress induced shift of the Curie point in epitaxial PbTiO3 thin films

George A. Rossetti, L. Eric Cross, and Keiko Kushida

Appl. Phys. Lett. 59, 2524 (1991); http://dx.doi.org/10.1063/1.105940 (3 pages) | Cited 124 times

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A 50 °C shift in Curie temperature has been observed for c‐axis oriented PbTiO3 thin films using x‐ray diffraction. An analysis of the electrostrictive strain based on the Devonshire thermodynamic formalism showed that the shift in the Curie point for these films can be plausibly explained by an effective two‐dimensional compressive stress of ≊400 MPa. The single‐domain, single‐crystal dielectric susceptibility (η33) and piezoelectric coefficient (d33) were calculated and found to be relatively unaffected, at room temperature, by a compressive stress of this magnitude.
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68.35.Rh Phase transitions and critical phenomena
77.55.-g Dielectric thin films
77.65.-j Piezoelectricity and electromechanical effects
81.15.Cd Deposition by sputtering

Application of the synchrotron white beam x‐ray topography to the thermoelastic transformation studies

C. Jourdan, S. Belkahla, G. Guenin, P. Marzo, J. Gastaldi, and G. Grange

Appl. Phys. Lett. 59, 2527 (1991); http://dx.doi.org/10.1063/1.105941 (2 pages) | Cited 1 time

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The thermoelastic transformation of the CuZnAl shape memory alloy has been studied in situ and in real time by the synchrotron white beam x‐ray topography technique. The evolution of the first martensite lath has been followed during the temperature cycling and its interaction with the crystal structure has been shown.  
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64.70.K- Solid-solid transitions
65.40.De Thermal expansion; thermomechanical effects
61.66.Dk Alloys

Adhesion of polycrystalline diamond thin films on single‐crystal silicon substrates

C. A. Gamlen, E. D. Case, D. K. Reinhard, and B. Huang

Appl. Phys. Lett. 59, 2529 (1991); http://dx.doi.org/10.1063/1.105942 (3 pages) | Cited 7 times

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Polycrystalline diamond films were deposited on (100) oriented silicon substrates using a microwave plasma disk reactor. Circular delaminations between the diamond thin film and the silicon substrate were produced by Vickers microindentation. While an overall relationship between mean delamination diameter and film thickness was not observed, an unexpectedly strong correlation was observed between delamination diameter and the square root of the coating grain size. A disadvantage of the Vickers microindentation technique is the damage sustained by the Vickers indenter tip after repeated loadings.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
62.20.M- Structural failure of materials
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Deposition of diamond‐like carbon film using electron cyclotron resonance plasma

S. C. Kuo, E. E. Kunhardt, and A. R. Srivatsa

Appl. Phys. Lett. 59, 2532 (1991); http://dx.doi.org/10.1063/1.105943 (3 pages) | Cited 21 times

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Hard diamond‐like carbon films were deposited on Si(100) substrates using a CH4 plasma created through electron cyclotron resonance (ECR) heating. The ECR plasma was excited by a Lisitano coil. These films could be deposited with a negative dc bias (−200 V) or a rf‐induced negative self‐bias (−100 V) on the substrates. The deposition rate of the film was about 2.3 Å/s. The deposited films were characterized by Raman spectroscopy and near‐edge x‐ray absorption fine structure analysis.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Transition from lateral to transverse phase separation during film co‐deposition

C. D. Adams, M. Atzmon, Y.‐T. Cheng, and D. J. Srolovitz

Appl. Phys. Lett. 59, 2535 (1991); http://dx.doi.org/10.1063/1.105944 (3 pages) | Cited 7 times

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We report observations of two distinct types of phase‐separated microstructures in co‐deposited Al‐Ge films. In the initial stages of growth, lateral phase separation is observed, with a temperature dependence consistent with surface diffusion. As the film grows thicker, the Ge‐rich phase becomes increasingly buried, and a transverse phase‐separated microstructure results, consisting of an Al‐rich layer covering a Ge‐rich layer. This observation is explained in terms of the competition between surface and interfacial free energies. We discuss the kinetic aspects of the phase separation process, and the resulting behavior in the thick‐film limit.
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68.35.Fx Diffusion; interface formation
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
64.75.-g Phase equilibria

Thermal decomposition of triethylgallium on variously reconstructed GaAs (111)B surfaces

Y. Ohki, Y. Hiratani, and M. Sasaki

Appl. Phys. Lett. 59, 2538 (1991); http://dx.doi.org/10.1063/1.105945 (3 pages) | Cited 5 times

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Mass spectrometry was applied to study the thermal decomposition of triethylgallium (TEG) on a GaAs (111)B surface. Gallium‐containing species desorbed or reflected from three kinds of differently reconstructed surfaces were measured at 420 °C. The signal intensities of the Ga containing species changed largely with the surface reconstruction in the following order: 2×2 As stabilized ≳√19 ×√19 Ga stabilized ≳1×1 Ga saturated. This result indicates that larger As coverage suppresses the thermal decomposition of TEG on a GaAs (111)B surface.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.10.Bk Growth from vapor
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Tuning of the Schottky barrier height using bi‐metallic layered structures

Chandrika Narayan, A. S. Karakashian, G. H. R. Kegel, and Z. Rivera

Appl. Phys. Lett. 59, 2541 (1991); http://dx.doi.org/10.1063/1.105946 (2 pages) | Cited 2 times

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Bi‐metallic Schottky contacts of Cr‐Al on p‐type Si using a layered structure have been investigated. In these contacts, the thickness of the inner layer in contact with Si was varied, while that of the outer metal layer was kept constant. Our studies indicate that the barrier height changes with the thickness of the inner metal layer. Furthermore, the morphology of our samples was examined with a transmission electron microscope (TEM) which indicates the presence of inhomogeneous mixing of Cr and Al.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.50.-h Electronic transport phenomena in thin films
73.61.At Metal and metallic alloys
85.30.Hi Surface barrier, boundary, and point contact devices

In situ determination of dielectric functions and optical gap of ultrathin amorphous silicon by real time spectroscopic ellipsometry

Ilsin An, Y. M. Li, C. R. Wronski, H. V. Nguyen, and R. W. Collins

Appl. Phys. Lett. 59, 2543 (1991); http://dx.doi.org/10.1063/1.105947 (3 pages) | Cited 26 times

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We have developed techniques to determine the near‐infrared to near‐ultraviolet dielectric function and optical gap of ultrathin amorphous silicon [a‐Si:(H)] using real‐time spectroscopic ellipsometry during preparation and processing. The techniques have been applied to ∼50 Å a‐Si:H films prepared by plasma‐enhanced chemical vapor deposition, and to ∼250 Å pure a‐Si chemically modified by atomic H exposure. For the latter, the time evolution of the bonded H content can be estimated along with the evolution of the gap.
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78.66.-w Optical properties of specific thin films
07.60.Fs Polarimeters and ellipsometers
68.55.-a Thin film structure and morphology
81.40.Tv Optical and dielectric properties related to treatment conditions

Selective deposition of silicon by plasma‐enhanced chemical vapor deposition using pulsed silane flow

G. N. Parsons

Appl. Phys. Lett. 59, 2546 (1991); http://dx.doi.org/10.1063/1.105948 (3 pages) | Cited 16 times

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We report a new low‐temperature (<300 °C) process for selective deposition of silicon using time modulated flow of silane into a hydrogen plasma. Time modulated gas flow allows the chemical processes associated with deposition and surface modification or etching to occur sequentially, and be controlled independently, giving an additional degree of freedom to the deposition process. The observed selective deposition is consistent with substrate specific nucleation, and preferential etching of the nuclei during the hydrogen plasma exposure. The application of the selective deposition process to the fabrication of thin‐film transistor structures is also presented.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.65.-b Surface treatments
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
72.80.Ng Disordered solids

Effect of surface recombination on the spectral dependence of photocurrent in intrinsic hydrogenated amorphous silicon films

Y. M. Li, R. M. Dawson, R. W. Collins, C. R. Wronski, and S. Wiedeman

Appl. Phys. Lett. 59, 2549 (1991); http://dx.doi.org/10.1063/1.105949 (3 pages) | Cited 2 times

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The spectral dependence of the photocurrent in intrinsic hydrogenated amorphous silicon (a‐Si:H) films was measured in the annealed and light‐soaked states. The photocurrents were modeled using numerical analysis which quantified the recombination in both the bulk as well as at the film surface and glass substrate interface. The results on films, having thicknesses between 1 and 3 μm, are consistent with thickness independent bulk transport properties and surface and substrate interface recombination velocities of (3–6)×104 and (1–2)×106 cm/s, respectively.
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72.40.+w Photoconduction and photovoltaic effects
72.80.Ng Disordered solids
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.50.Pz Photoconduction and photovoltaic effects

Highly stable silicon dioxide films deposited by means of rapid thermal low‐pressure chemical vapor deposition onto InP

A. Katz, A. Feingold, U. K. Chakrabarti, S. J. Pearton, and K. S. Jones

Appl. Phys. Lett. 59, 2552 (1991); http://dx.doi.org/10.1063/1.105950 (3 pages) | Cited 2 times

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An attempt was made to deposit a high thermally stable silicon dioxide (SiO2) film onto InP substrates. The films were grown by rapid thermal, low‐pressure chemical vapor deposition (RT‐LPCVD), using pure oxygen (O2) and 2% diluted silane (SiH4) in argon (Ar) gas sources, in the temperature range of 350–550 °C and pressure range of 3–10 Torr. The SiO2/InP structures were heated, post‐deposition, up to 1000 °C for durations of up to 5 min, resulting in negligible changes in the properties of the SiO2 films and a limited SiO2/InP interfacial reaction of about 15 nm thick. The higher the initial deposition temperature of the SiO2 the larger was the film compressive stress and the less the degree of densification the film underwent through the post‐deposition heating cycles.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.60.Dv Thermal stability; thermal effects
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.40.Gh Other heat and thermomechanical treatments
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