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25 Nov 1991

Volume 59, Issue 22, pp. 2775-2907

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Carrier heating in AlGaAs single quantum well laser diodes

Morris P. Kesler, Christoph S. Harder, and Eberhard E. Latta

Appl. Phys. Lett. 59, 2775 (1991); http://dx.doi.org/10.1063/1.105856 (3 pages) | Cited 9 times

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The nonamplified spontaneous emission of AlGaAs single quantum well graded index separate confinement heterostructure laser diodes has been measured for photon energies between 1.35 and 2.05 eV and at pump currents up to 19 kA cm−2 and optical flux densities up to 35 MW cm−2. The spectra are very complex and we observe the following three features. First, the spontaneous emission intensity increases slowly with current, even above threshold. Second, the carrier temperature increases slightly above the lattice temperature, 28 K at a pump rate of 1.5×1029 cm−3 s−1. Third, at high power densities the high‐energy spontaneous emission at a photon energy of 1.9 eV increases dramatically.
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42.55.Px Semiconductor lasers; laser diodes
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.55.Cr III-V semiconductors

Polarization‐independent optical waveguide intensity switch with parabolic quantum well

Kunio Tada, Shinji Nishimura, and Takuya Ishikawa

Appl. Phys. Lett. 59, 2778 (1991); http://dx.doi.org/10.1063/1.105857 (3 pages) | Cited 14 times

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In a parabolic quantum well, the shift in optical transition energy due to the quantum confined Stark effect is independent of the carrier effective mass. This fact enables us to realize polarization‐independent optical waveguide intensity switches with high on/off ratio. An absorption‐type switch with GaAs/Al0.3Ga0.7As equivalent parabolic quantum wells is fabricated with molecular beam epitaxy. Both transverse‐electric and transverse‐magnetic mode lights exhibit an on/off ratio of 27.6 dB at an applied voltage of 6.84 V at 850 nm wavelength. To our knowledge, this is the first polarization‐independent optical waveguide intensity switch based on the electric‐field‐induced effect in the semiconductor quantum well.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.79.Gn Optical waveguides and couplers
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

InGaAs/GaAs/InGaP multiple‐quantum‐well lasers prepared by gas‐source molecular beam epitaxy

J. M. Kuo, Y. K. Chen, M. C. Wu, and M. A. Chin

Appl. Phys. Lett. 59, 2781 (1991); http://dx.doi.org/10.1063/1.105858 (3 pages) | Cited 19 times

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We report on the first room‐temperature operation of aluminum‐free In0.2Ga0.8As/GaAs/ In0.49Ga0.51P multiple‐quantum‐well lasers grown by gas‐source molecular beam epitaxy. These lasers have low threshold current density Jth of 177 A/cm2, high internal quantum efficiency of 91%, and low internal waveguide loss of 9.1 cm−1. The characteristic temperature T0 is 150 K, which is the highest value ever reported. These results demonstrate that gas‐source molecular beam epitaxy is suitable for growing high‐quality In0.2Ga0.8As/GaAs/In0.49Ga0.51P lasers.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.79.Gn Optical waveguides and couplers

High‐temperature operation of periodic index separate confinement heterostructure quantum well laser

Y. K. Chen, M. C. Wu, W. S. Hobson, M. A. Chin, K. D. Choquette, R. S. Freund, and A. M. Sergent

Appl. Phys. Lett. 59, 2784 (1991); http://dx.doi.org/10.1063/1.105859 (3 pages) | Cited 8 times

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High‐temperature operation of the InGaAs/GaAs/AlGaAs quantum well lasers with an expanded vertical optical mode is demonstrated for the first time using a periodic index separate confinement heterostructure (PINSCH) laser. Continuous wave (cw) operation up to 145 °C is achieved with a coated 3 μm×508 μm PINSCH laser. The measured characteristic temperature (170 K) and external differential quantum efficiency (0.75 mW/mA) are comparable to those obtained in a graded index separate confinement heterostructure laser fabricated at the same time. These results illustrate the excellent capability of the PINSCH laser to compress the transverse beam divergence without sacrificing the electrical carrier confinement.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Realization of a photovoltaic transistor based on a steady‐state internal polarization effect in asymmetric semiconductor superlattices

C. T. Liu, J. M. Liu, and A. Y. Cho

Appl. Phys. Lett. 59, 2787 (1991); http://dx.doi.org/10.1063/1.105860 (3 pages) | Cited 1 time

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We have used molecular beam epitaxy to grow at 500 °C a graded InAlGaAs superlattice structure sandwiched by two heavily doped window layers which are directly connected to the gate and source of a discrete field‐effect transistor (FET). Upon band‐gap illumination, a steady‐state photovoltage controllable by the light intensity is generated by the superlattice structure, which then modulates the drain current of the FET to the same amount as does a dc voltage source. The intrinsic response time of the photovoltaic effect is on the order of picoseconds, thus the modulation speed on the drain current is completely limited by the FET.
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85.60.Dw Photodiodes; phototransistors; photoresistors
72.40.+w Photoconduction and photovoltaic effects
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Coherent high‐power arrays of InGaAs/InGaAsP multiquantum‐well grating‐surface‐emitting diode lasers operating at λ=1.5 μm

E. A. Vangieson, S. L. Palfrey, R. E. Enstrom, J. M. Hammer, Ramon U. Martinelli, N. W. Carlson, G. A. Evans, J. T. Andrews, J. Appert, R. Stolzenberger, and A. Triano

Appl. Phys. Lett. 59, 2790 (1991); http://dx.doi.org/10.1063/1.105861 (3 pages)

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We have demonstrated high‐power linear arrays of InGaAs/InGaAsP grating‐surface‐emitting lasers operating at a wavelength of 1.5 μm and emitting over 200 mW cw and 400 mW pulsed power. Arrays 1 cm in length exhibit coherent, mutual‐injection‐coupled laser action; single‐wavelength‐mode operation with a linewidth of 100 MHz at a power output of 55 mW has been observed.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.60.Jb Light-emitting devices

Electro‐optic determination of second and third‐order susceptibilities in poled polymer films

P. Röhl, B. Andress, and J. Nordmann

Appl. Phys. Lett. 59, 2793 (1991); http://dx.doi.org/10.1063/1.105862 (3 pages) | Cited 22 times

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An electro‐optic measuring technique is reported by which higher‐order susceptibilities of nonlinear optical polymer films can be determined. The basis of the evaluation is the separation of linear and quadratic electro‐optic effects by means of a dc and ac modulated electric field in the experiment. The method is demonstrated with results for an unpoled and a poled polymer film.
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78.66.Qn Polymers; organic compounds
07.60.Ly Interferometers
42.70.-a Optical materials
78.20.Jq Electro-optical effects

Wavelength tuning in low threshold current, partially pumped InGaAs/AlGaAs ridge waveguide lasers

R. L. Williams, D. Moss, M. Dion, M. Buchanan, and K. Dzurko

Appl. Phys. Lett. 59, 2796 (1991); http://dx.doi.org/10.1063/1.105863 (3 pages) | Cited 3 times

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We examine the dependence upon unpumped length of the lasing threshold current in partially pumped InGaAs/AlGaAs graded index, separate confinement heterojunction lasers and demonstrate the tunability of our devices using current injection into the previously unpumped section.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

All‐optical sub‐Tbits/s serial‐to‐parallel conversion using excitonic giant nonlinearity

K. Ema, M. Kuwata‐Gonokami, and F. Shimizu

Appl. Phys. Lett. 59, 2799 (1991); http://dx.doi.org/10.1063/1.105864 (3 pages) | Cited 20 times

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An all‐optical serial‐to‐parallel conversion technique, which is the inverse process of the real‐time pulse shaping, is reported. A conversion of 0.14‐Tbits/s signals using excitonic‐giant nonlinearity of ZnSe film is reported. The response of this conversion system is faster than 13 ps with a conversion efficiency of 0.1%.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks

Optical time‐division demultiplexing using second‐order‐optical nonlinear effects

Hong Lin and John Stephen Smith

Appl. Phys. Lett. 59, 2802 (1991); http://dx.doi.org/10.1063/1.105865 (3 pages) | Cited 4 times

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A novel scheme using second‐order‐optical nonlinear effects for optical time‐division demultiplexing is proposed. This scheme is all‐optical, and has potential bandwidth on the order of tera (1012) Hz. A prototype demultiplexer using this scheme has been demonstrated, achieving bit rate capacity of 100 Gb/s and crosstalk of −20 dB. This scheme could be realized in a compact form with further advances in nonlinear‐waveguide devices and high‐peak power semiconductor lasers.
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42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Optical parametric amplification in a lithium triborate crystal tunable from 0.65 to 2.5 μm

Shujie Lin, J. Y. Huang, Jiwu Ling, Chaungtian Chen, and Y. R. Shen

Appl. Phys. Lett. 59, 2805 (1991); http://dx.doi.org/10.1063/1.105866 (3 pages) | Cited 29 times

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We investigate the phase‐matching properties and the performances of lithium triborate (LBO) crystals, angle‐ and temperature‐tuned to achieve type‐I phase matching for ps, high‐power, tunable optical parametric amplification (OPA). A novel retracing behavior was observed in the tuning curves of the LBO OPA.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.-a Optical materials

Mechanisms affecting long conduction time plasma opening switches

Donald Parks, Eduardo Waisman, and Ira Katz

Appl. Phys. Lett. 59, 2808 (1991); http://dx.doi.org/10.1063/1.105867 (3 pages) | Cited 1 time

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Experimental evidence suggests that long conduction time (≥ (R18)1 μs) plasma opening switches open more slowly than expected on the basis of magnetic forces, and perhaps even on the basis of plasma erosion. We propose that the slow opening is associated with charge exchange with and/or electron ionization of neutral particles produced in the switch gap during and/or prior to the power pulse. The possibility of such mechanisms bears on the choice of switch plasma and on surface conditioning procedures in the development of fast opening switch technology.
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52.75.Kq Plasma switches (e.g., spark gaps)
52.40.-w Plasma interactions (nonlaser)
52.80.Pi High-frequency and RF discharges

Properties of a new high‐efficiency vacuum ultraviolet fluorine lamp excited by a microwave discharge

Hiroshi Kumagai and Koichi Toyoda

Appl. Phys. Lett. 59, 2811 (1991); http://dx.doi.org/10.1063/1.105868 (3 pages) | Cited 13 times

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A vacuum ultraviolet fluorine lamp excited by continuous‐wave microwave discharge was developed for the first time. This lamp provided a fluorescence spectrum which was comprised of two broad lines centered at 157 and 166 nm. Output performances were investigated in terms of gas mixture and total pressure. A total fluorescence power of 18.9 W was obtained with an intrinsic efficiency of 6.2%, when a microwave power of 310 W was coupled to the plasma.
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42.72.-g Optical sources and standards
52.80.Pi High-frequency and RF discharges

Thermal treatment studies of the photoluminescence intensity of porous silicon

C. Tsai, K.‐H. Li, J. Sarathy, S. Shih, J. C. Campbell, B. K. Hance, and J. M. White

Appl. Phys. Lett. 59, 2814 (1991); http://dx.doi.org/10.1063/1.105869 (3 pages) | Cited 188 times

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Thermal annealing studies of the photoluminescence (PL) intensity and Fourier‐transform infrared spectroscopy have been performed concurrently on porous Si. A sharp reduction in the PL intensity is observed for annealing temperatures ≳300 °C and this coincides with desorption of hydrogen from the SiH2 surface species. A brief etch in HF can restore the luminescence of the samples annealed below 400 °C. We conclude that SiH2 is essential to the visible luminescence in porous Si.
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78.55.Hx Other solid inorganic materials
78.66.-w Optical properties of specific thin films
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Swelling of plasma‐polymerized tetrafluoroethylene films

M. A. Butler, R. J. Buss, and C. H. Seager

Appl. Phys. Lett. 59, 2817 (1991); http://dx.doi.org/10.1063/1.106403 (3 pages) | Cited 6 times

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Swelling of micrometer thick‐films of plasma‐polymerized tetrafluoroethylene has been measured for a range of solvents using an optical‐interferometric technique. For low gas‐phase concentrations of the solvent, the swelling is found to correlate with the ionization potential of the solvent. Photo‐thermal deflection spectroscopy of the films shows optical absorption in the infrared, which changes with exposure to different solvents. Both of these results suggest weak electron transfer from the solvent to the polymer as the dominant interaction mechanism.
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61.25.H- Macromolecular and polymers solutions; polymer melts
61.41.+e Polymers, elastomers, and plastics
64.75.-g Phase equilibria
82.35.-x Polymers: properties; reactions; polymerization

High reflectivity 1.55 μm InP/InGaAsP Bragg mirror grown by chemical beam epitaxy

F. S. Choa, K. Tai, W. T. Tsang, and S. N. G. Chu

Appl. Phys. Lett. 59, 2820 (1991); http://dx.doi.org/10.1063/1.105870 (3 pages) | Cited 16 times

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We report the chemical‐beam epitaxial (CBE) growth of InP/InGaAsP Bragg mirrors around 1.55 μm wavelength region. Mirrors with nearly 100% reflectivity and with more than 400 Å flat top region in the Bragg band have been achieved by using 45 pairs of InP (1348 Å) and InGaAsP (1216 Å, λg=1.45 μm) quarter wavelength layers which have a total thickness of 11.5 μm. Excellent uniformity of the layer thickness and optical quality in both horizontal and vertical directions were obtained. This demonstrates the unique capability of CBE in maintaining uniform and reproducible growth of InP/InGaAsP during a long growth period.
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42.15.Eq Optical system design
42.79.Bh Lenses, prisms and mirrors
68.55.-a Thin film structure and morphology

Properties of p‐GaAs/sawtooth doping superlattice/n+‐GaAs structure prepared by molecular beam epitaxy

Chung‐Yih Sun and Wen‐Chau Liu

Appl. Phys. Lett. 59, 2823 (1991); http://dx.doi.org/10.1063/1.105871 (3 pages)

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The transport properties of a p‐GaAs/sawtooth doping superlattice (SDS)/n+‐GaAs structure has been studied. It is known that the transport properties vary with temperature. Experimentally, a diode‐like performance is obtained, due to the thermionic emission, at room temperature. However, a quite different S‐shaped negative‐differential‐resistance (NDR) phenomenon, resulting primarily from the avalanche multiplication in the SDS region, is observed at 77 K. The existence of different performance modes, i.e., diode and switch, on the same wafer chip provides more flexibility for device and circuit applications.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Fr Low-field transport and mobility; piezoresistance
72.80.Ey III-V and II-VI semiconductors

GaAs quantum well laser and heterojunction bipolar transistor integration using molecular beam epitaxial regrowth

Paul R. Berger, N. K. Dutta, D. L. Sivco, and A. Y. Cho

Appl. Phys. Lett. 59, 2826 (1991); http://dx.doi.org/10.1063/1.105872 (3 pages) | Cited 5 times

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To explore monolithically integrated phototransmitters, a graded‐index quantum well laser was integrated with a selectivity regrown heterojunction bipolar transistor (HBT). The laser utilized a p‐up configuration, and the HBT used collector down geometry. This scheme allowed the devices to be interconnected through the n+‐GaAs substrate. The threshold current (Ith) for the ridge waveguide laser was ∼70 mA. The HBT exhibited a small signal gain of 26 at a collector current of 30 mA. The modulation index defined as the change in light output per unit change in base current is 1.2 mW/mA for our device.
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42.82.-m Integrated optics
85.40.Hp Lithography, masks and pattern transfer
85.60.-q Optoelectronic devices

Properties of DX centers in AlxGa1−xAs co‐doped with boron and silicon

P. M. Mooney, M. A. Tischler, and B. D. Parker

Appl. Phys. Lett. 59, 2829 (1991); http://dx.doi.org/10.1063/1.105873 (3 pages) | Cited 5 times

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AlxGa1−xAs co‐doped with Si and B was investigated to determine the effect of B on the properties of DX centers. We found the deep level transient spectroscopy (DLTS) peak of the DX center to be unchanged and also observed large persistent photoconductivity (PPC), in samples containing boron in concentrations up to 6×1018 cm−3. Our finding that B has no significant effect on DX centers differs from an earlier report that the presence of low concentrations of B modified the DLTS spectrum of Si‐doped GaAs under hydrostatic pressure.
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71.55.Eq III-V semiconductors
72.80.Ey III-V and II-VI semiconductors
73.61.Ey III-V semiconductors

Metallic tungsten phosphide films formed by spin coating peroxopolytungstic acid on InP

R. F. Karlicek, K. Williams, F. A. Baiocchi, P. M. Thomas, and S. Nakahara

Appl. Phys. Lett. 59, 2832 (1991); http://dx.doi.org/10.1063/1.105874 (3 pages) | Cited 1 time

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Metallic β‐WP2 films have been formed on InP by reacting amorphous peroxopolytungstic acid (APA) films on InP in a PH3/H2 ambient at 600 °C. The resulting metallic film exhibits a low sheet resistance (310 μΩ cm) and preliminary measurements suggest the contact on n‐InP is ohmic. By using the unreacted peroxopolytungstic acid films as a negative inorganic photoresist, patterned β‐WP2 metallic films on InP have been made without the use of a separate metal film etching step. The reacted metallic films show a smooth, abrupt metal/semiconductor interface. The high temperature stability of β‐WP2 on InP suggests that this material may be useful as a refractory contact to InP.
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85.40.Hp Lithography, masks and pattern transfer
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
73.40.Ns Metal-nonmetal contacts

Controlling the sulphur content of ZnSe1−ySy epitaxial layers grown by metalorganic chemical vapor deposition using diethyl selenide, hydrogen sulphide, and dimethylzinc

H. M. Yates, J. O. Williams, and D. J. Cole‐Hamilton

Appl. Phys. Lett. 59, 2835 (1991); http://dx.doi.org/10.1063/1.105875 (3 pages) | Cited 3 times

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Epitaxial layers of ZnSe1−ySy on (100) GaAs substrates have been grown by metalorganic chemical vapor deposition. The reactants used are dimethylzinc (DMZn), hydrogen sulphide (H2S) and diethylselenide (DESe). The DESe has been used rather than the more usual selenium precursor, hydrogen selenide (H2Se). Results on the relationship between the sulphur incorporated into the epilayer and the group VI gas phase reactant molar ratio show a more linear relationship than previously found for the atmospheric pressure growth of this material using the hydrides. Despite the higher growth temperature (450 °C) and nonoptimized conditions the epilayers are shown to be comparable with those grown with hydrides and at lower growth temperatures (280 °C). Low‐temperature (10 K) photoluminescence gave near‐band‐edge emission linewidths of 6.8 meV for the ZnSe0.87S0.13 ternary.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology
78.55.Et II-VI semiconductors

Native‐oxide coupled‐cavity AlxGa1−xAs‐GaAs quantum well heterostructure laser diodes

N. El‐Zein, F. A. Kish, N. Holonyak, A. R. Sugg, M. J. Ries, S. C. Smith, J. M. Dallesasse, and R. D. Burnham

Appl. Phys. Lett. 59, 2838 (1991); http://dx.doi.org/10.1063/1.105881 (3 pages) | Cited 5 times

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Data are presented demonstrating AlxGa1−xAs‐GaAs quantum well heterostructure laser diodes consisting of an array of coupled cavities (19 μm long on 22 μm centers, ∼250 μm total length) arranged lengthwise in single 10‐μm‐wide laser stripes. The cavities are defined by a native oxide formed from a significant portion of the high‐gap AlxGa1−xAs upper confining layer. The native oxide (grown at 425 °C in H2O vapor+N2 carrier gas) confines the injected carriers and optical field within the cavities, resulting in reflection and optical feedback distributed periodically along the laser stripe. These diodes exhibit single‐longitudinal‐mode operation over an extended range (relative to similar diodes fabricated without multiple cavities). At high current injection levels, longitudinal‐mode spectra demonstrate unambiguously oscillation from the internal coupled cavities.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

Dissociation of P‐H, As‐H, and Sb‐H complexes in n‐type Si

S. J. Pearton and J. Lopata

Appl. Phys. Lett. 59, 2841 (1991); http://dx.doi.org/10.1063/1.105851 (3 pages) | Cited 8 times

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Reverse‐bias annealing of P‐H, As‐H, and Sb‐H pairs in hydrogenated Schottky diodes was used to establish the dissociation energies of these complexes. The annealing kinetics are found to be first order, with the dissociation frequencies thermally activated of the form ν=ν0e−ED/kT. The dissociation energies ED are found to be 1.20±0.05 eV for P‐H, 1.12±0.05 eV for As‐H, and 1.13±0.05 eV for Sb‐H. The relative insensitivity of these values to the actual donor species is consistent with the currently accepted model in which the hydrogen passivates the electrical activity of the donor by attaching to one of the donors Si nearest neighbors at an antibonding interstitial site.
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66.30.J- Diffusion of impurities
72.80.Cw Elemental semiconductors

Dynamic reflection high‐energy electron diffraction observation of 3C‐SiC(001) surface reconstruction under Si2H6 beam irradiation

Tatsuo Yoshinobu, Iwao Izumikawa, Hideaki Mitsui, Takashi Fuyuki, and Hiroyuki Matsunami

Appl. Phys. Lett. 59, 2844 (1991); http://dx.doi.org/10.1063/1.105852 (3 pages) | Cited 29 times

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The transition of 3C‐SiC(001) surface superstructures under Si2H6 gas molecular beam irradiation was dynamically observed by reflection high‐energy electron diffraction. Starting from the C‐terminated c(2×2) structure, the surface structure changed in the order of c(2×2)→(2×1)→(5×2)→(3×2) with continuing irradiation. The amounts of Si2H6 dose required for the transitions c(2×2)→(5×2) and c(2×2)→(3×2) were approximately 1.16 and 1.36 times as much as that for c(2×2)→(2×1). These ratios are interpreted as the relative amount of the constituent Si atoms of the superstructures. This experimental result supports the simple dimer model for (2×1) (1 monolayer of Si) and the additional dimer model for (5×2) (1.2 monolayer) and (3×2) (1.33 monolayer), respectively, as the proper configurations of these surface superstructures.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.80.Lj Atom and molecule irradiation effects

Electrical characteristics of Si3N4/Si/GaAs metal‐insulator‐semiconductor capacitor

D. S. L. Mui, H. Liaw, A. L. Demirel, S. Strite, and H. Morkoç

Appl. Phys. Lett. 59, 2847 (1991); http://dx.doi.org/10.1063/1.105853 (3 pages) | Cited 28 times

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We report on the electrical characteristics of an as‐grown Si3N4/Si/n‐GaAs metal‐insulator‐semiconductor capacitors. The GaAs layer is grown by molecular beam epitaxy and both the Si3N4 and the 10 Å Si layers are deposited using silane in a vacuum connected ultrahigh vacuum chemical vapor deposition chamber driven by an electron cyclotron resonance plasma source. The current‐voltage characteristics of the Si3N4 films at high fields can be best represented by Fowler–Nordheim tunneling indicative of the high quality of the films. Hole inversion of the n‐GaAs layer is clearly seen in the quasi‐static capacitance‐voltage curve. Despite past reports on the presence of a large amount of bulk traps in Si3N4, a hysteresis of less than 100 meV is observed in the high‐frequency capacitance‐voltage curves with a bias voltage swing of ±4 V. From the high‐low capacitance method we estimated the interface trap density to be of the order of 4×1011 eV−1 cm−2 and from the conductance measurements we found a value of 1012 eV−1 cm−2.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.80.Sk Insulators
73.20.At Surface states, band structure, electron density of states
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