APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

25 Nov 1991

Volume 59, Issue 22, pp. 2775-2907

Page 2 of 2 Pages Previous Page | Jump to Page

Comparative study of the perovskite phase microstructure evolution and electrical properties of lead zirconate titanate thin-film capacitors annealed in oxygen and nitrogen ambients

Vinay Chikarmane, Chandra Sudhama, Jiyoung Kim, Jack Lee, Al Tasch, and Steve Novak

Appl. Phys. Lett. 59, 2850 (1991); http://dx.doi.org/10.1063/1.106427 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
Lead zirconate titanate [PZT, Pb(ZrxTi1−x)O3, x = 0.65, 400 nm] thin-film capacitors with very low leakage current and large stored charge densities (Q′c = Pmax–Pr) for ultralarge scale integration dynamic random access memory (ULSI DRAM) memory applications have been fabricated by reactive dc magnetron sputtering followed by an annealing step. In this letter, we present a comparative study of the significant influence of the use of an oxidizing (O2) as against a nonoxidizing annealing ambient (N2) on the evolution of the perovskite phase microstructure and the electrical properties of PZT capacitors. The phase transformation kinetics are faster in a N2 annealing ambient at low temperatures, yielding capacitors with a large Q′c at low annealing thermal budgets. However, N2 annealed films exhibit a lower breakdown field and time to breakdown which is in agreement with a degradation model based on the field-induced concentration polarization of oxygen vacancies.
Show PACS
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
84.32.Tt Capacitors

Electron‐cyclotron‐resonance plasma‐enhanced chemical vapor deposition of epitaxial Si without substrate heating by ultraclean processing

Koichi Fukuda, Junichi Murota, Shoichi Ono, Takashi Matsuura, Hiroaki Uetake, and Tadahiro Ohmi

Appl. Phys. Lett. 59, 2853 (1991); http://dx.doi.org/10.1063/1.105855 (3 pages) | Cited 17 times

Full Text: | Download PDF

Show Abstract
By Ar plasma‐enhanced decomposition of SiH4 using ultraclean electron‐cyclotron‐resonance plasma processing, low‐temperature Si epitaxy has been achieved even without external substrate heating for the first time. Ar plasma pre‐exposure experiments have revealed that Ar ion energies lower than a few eV are favorable for Si epitaxy at low temperatures, in order to suppress plasma damage on the surface crystallinity. Furthermore, it has been found that addition of H2 to the Ar plasma is extremely effective to remove the native oxide layer on the Si surface.
Show PACS
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

Ion implantation profile modeling of nitrocellulose coated substrates

L. Merhari, C. Le Hüe, C. Belorgeot, and Z. Bahna

Appl. Phys. Lett. 59, 2856 (1991); http://dx.doi.org/10.1063/1.105832 (3 pages)

Full Text: | Download PDF

Show Abstract
The modification of a standard ion implantation profile is usually achieved by carrying out successive irradiations at variable ion incident energy. Keeping this latter parameter constant, we propose an alternative way which consists in implanting the substrate through a nitrocellulose thin film shrinking during ion irradiation. Making precise use of the self‐developing mechanism of nitrocellulose when functioning as an ion beam resist, we describe a simple model predicting the new implantation profile and, in particular, the concentration enhancement obtained at the surface of the substrate. The model whose fundamentals and related mathematical derivations are given, is critically dependent on the diffusion mechanism of the implanted ions in the substrate. Comparison between simulated and preliminary experimental implantation profiles of Cs in polyparaphenylenesulfide is made and does not show a major divergence considering that the only diffusion mechanism taken into account is the thermal diffusion.
Show PACS
61.72.uf Ge and Si
61.72.U- Doping and impurity implantation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
85.40.Hp Lithography, masks and pattern transfer

Cation interdiffusion in GaAs‐AlAs superlattices measured with Raman spectroscopy

J. Grant, J. Menéndez, L. N. Pfeiffer, K. W. West, E. Molinari, and S. Baroni

Appl. Phys. Lett. 59, 2859 (1991); http://dx.doi.org/10.1063/1.105833 (3 pages) | Cited 15 times

Full Text: | Download PDF

Show Abstract
A combined Raman and ab initio lattice dynamical study of ultrathin (GaAs)4(AlAs)4 superlattices, focusing mainly on AlAs‐like vibrations, clearly shows that a significant amount of interdiffusion occurs in these samples when grown at conventional molecular‐beam epitaxy temperatures between 580 and 640 °C. At these temperatures, growth interruption is found to have little impact on the structural quality of the superlattices.
Show PACS
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
66.30.H- Self-diffusion and ionic conduction in nonmetals

High‐purity InP layer grown by metalorganic chemical vapor deposition using tertiarybutylphosphine

Toru Imori, Takayuki Ninomiya, Kouhei Ushikubo, Kazuhiro Kondoh, and Kouichi Nakamura

Appl. Phys. Lett. 59, 2862 (1991); http://dx.doi.org/10.1063/1.105834 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
High‐purity InP layers have been successfully grown by metalorganic chemical vapor deposition (MOCVD) using tertiarybutylphosphine (TBP) as a phosphorus source. The highest quality InP layer, which was grown at a V/III ratio of 36, a growth temperature of 600 °C and a growth pressure of 760 Torr, exhibited electron mobility as high as 167 000 cm2/V s and carrier concentrations as low as 1.8×1014 cm−3 at 77 K. The film quality strongly depended on the silicon content as an impurity in TBP. Electron mobility at 77 K was dependent on the silicon content, changing its value from 10 100 cm2/V s (Si content; 0.8 ppm) to 167 000 cm2/V s (Si content; <0.03 ppm). The low‐temperature (4.2 K) optical properties were also affected by silicon content as a impurity. It was found that electron mobility of 167 000 cm2/V s was the highest ever reported for InP grown by MOCVD using TBP as a phosphorus source. The quality of InP grown using TBP was equivalent to that of InP grown using phosphine (PH3).
Show PACS
68.55.-a Thin film structure and morphology
73.61.Ey III-V semiconductors

Highly carbon‐doped p‐type Ga0.5In0.5As and Ga0.5In0.5P by carbon tetrachloride in gas‐source molecular beam epitaxy

T. P. Chin, P. D. Kirchner, J. M. Woodall, and C. W. Tu

Appl. Phys. Lett. 59, 2865 (1991); http://dx.doi.org/10.1063/1.105835 (3 pages) | Cited 36 times

Full Text: | Download PDF

Show Abstract
Highly carbon‐doped, highly p‐type Ga0.5In0.5As and Ga0.5In0.5P epilayers were grown by gas‐source molecular beam epitaxy (GSMBE) using carbon tetrachloride (CCl4). Growth temperatures slightly below conventional values were used to increase the carbon incorporation, and a short‐duration post‐growth anneal near the growth temperature was necessary in order to obtain the highest hole concentrations, which were p=3×1019 cm−3 for Ga0.5In0.5As and p=5×1018 cm−3 for Ga0.5In0.5P. This is the first report of significant p‐type carbon doping for Ga0.5In0.5P and the highest concentration from carbon doping yet reported for both ternary compounds. Reversible acceptor passivation from hydrogen species in the growth environment is a plausible explanation for the annealing behavior.
Show PACS
61.72.U- Doping and impurity implantation
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Low energy ion‐assisted deposition of titanium nitride ohmic contacts on alpha (6H)‐silicon carbide

R. C. Glass, L. M. Spellman, and R. F. Davis

Appl. Phys. Lett. 59, 2868 (1991); http://dx.doi.org/10.1063/1.105836 (3 pages) | Cited 19 times

Full Text: | Download PDF

Show Abstract
Low energy (100 eV) ion‐assisted reactive evaporation was used to deposit titanium nitride (TiN) onto single crystal α(6H)‐silicon carbide (SiC) wafers to investigate the potential of the former for electrical contacts. Theoretical considerations indicate that TiN (work function of 3.74 eV) should form an ohmic contact with SiC [work function of 4.8 eV for the (0001) face] provided an oxide‐free interface can be obtained. Activated nitrogen was used to clean the SiC surface prior to deposition, while Auger spectroscopy and current‐voltage (I‐V) measurements were used to assess oxygen concentration at the interface and contact character, respectively. The contacts were ohmic after deposition. Little change was observed after annealing at 450 and 550 °C for 15 min.
Show PACS
73.40.Ns Metal-nonmetal contacts

Symmetric Si/Si1−xGex two‐dimensional hole gases grown by rapid thermal chemical vapor deposition

V. Venkataraman, P. V. Schwartz, and J. C. Sturm

Appl. Phys. Lett. 59, 2871 (1991); http://dx.doi.org/10.1063/1.105837 (3 pages) | Cited 12 times

Full Text: | Download PDF

Show Abstract
Single and symmetric double p‐type modulation‐doped structures have been fabricated in Si/SiGe for the first time by rapid‐thermal chemical‐vapor deposition. Temperature‐dependent electrical measurements and high‐field magnetotransport measurements demonstrate the presence of a well‐confined two‐dimensional hole gas in these samples. Nominally‐symmetric normal and inverted structures differ in carrier density and mobility at most by 20%, indicating that there is little asymmetry due to surface segregation or autodoping effects. Measurements on double heterostructures confirm that the interfaces are symmetric to within 10 Å. Peak mobilities reached 2500 cm2/V s at 10 K, comparable to those obtained in similar samples grown by ultrahigh vacuum techniques.
Show PACS
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Effects of substrate misorientation on incorporation of ambient oxygen and interfacial roughness in AlGaAs/GaAs heterostructures grown by molecular‐beam epitaxy

Naresh Chand, S. N. G. Chu, and M. Geva

Appl. Phys. Lett. 59, 2874 (1991); http://dx.doi.org/10.1063/1.105838 (3 pages) | Cited 15 times

Full Text: | Download PDF

Show Abstract
By secondary ion‐mass spectrometry (SIMS) and transmission‐electron microscopy (TEM), we have studied the effects of substrate misorientation and GaAs monolayers on the incorporation of ambient oxygen and interfacial roughness in AlxGa1−xAs/GaAs heterostructures grown by molecular‐beam epitaxy. Consistent with earlier works, O is found in AlGaAs only, and not in GaAs. Incorporation of O, and surface and interfacial roughness are reduced if the substrate is misoriented towards 〈111〉A. The O atoms in AlGaAs are mobile enough to segregate on the surface and remain trapped at the GaAs/AlGaAs inverted interfaces, even when the GaAs layer is as thin as one monolayer.
Show PACS
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Electron‐wave reflection by multi‐quantum barrier in n‐GaAs/i‐AlGaAs/ n‐GaAs tunneling diode

Takeshi Takagi, Fumio Koyama, and Kenichi Iga

Appl. Phys. Lett. 59, 2877 (1991); http://dx.doi.org/10.1063/1.105839 (3 pages) | Cited 14 times

Full Text: | Download PDF

Show Abstract
For the purpose of experimentally demonstrating the enhancement of electron‐wave reflection by a multi‐quantum barrier (MQB) consisting of multiple combinations of quarter de Broglie wavelength hetero‐stacks, we have fabricated two types of n‐GaAs/i‐barrier/n‐GaAs tunneling diodes with a bulk AlxGa1−xAs barrier and an AlxGa1−xAs/GaAs MQB. From the current‐voltage characteristic at 77 K, it has been clarified that electrons are well reflected by the MQB. The potential barrier height, virtually increased by the MQB, is estimated to be about 80 meV, which is in good agreement with a theoretical expectation.
Show PACS
73.40.Gk Tunneling
73.40.Ty Semiconductor-insulator-semiconductor structures
72.80.Ey III-V and II-VI semiconductors

Iso‐electronic impurity‐induced disordering: AlxGa1−xAs‐GaAs/In

T. K. Tang, J. J. Alwan, C. M. Herzinger, T. M. Cockerill, A. Crook, T. A. DeTemple, J. J. Coleman, and J. E. Baker

Appl. Phys. Lett. 59, 2880 (1991); http://dx.doi.org/10.1063/1.105840 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
Data are presented on the disordering of an AlxGa1−xAs‐GaAs laser structure using indium solid sources. Using separate and co‐diffusion of silicon and indium from thin‐film sources, indium was inferred to have a higher diffusion coefficient than silicon, and to result in a similar degree of impurity‐induced disordering. The degree of index guiding was tested by excess‐loss measurements in single‐mode raised‐cosine s‐bends. In particular, structures patterned by SiO2/In disordering had excess losses similar to those patterned with SiO2. A 260 μm transition length for 3 dB loss was measured for 1‐μm‐wide guides with 100 μm guide offsets, which corresponds to a lateral index of refraction difference of ≊0.8–1.0%. There was no evidence for increased linear loss due to the presence of a dilute InGaAs alloy at the measurement wavelength of 870 nm.
Show PACS
66.30.J- Diffusion of impurities
68.35.Fx Diffusion; interface formation
42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics

Visible spectrum native‐oxide coupled‐stripe In0.5(AlxGa1−x)0.5P–In0.5Ga0.5P quantum well heterostructure laser arrays

F. A. Kish, S. J. Caracci, N. Holonyak, S. A. Maranowski, J. M. Dallesasse, R. D. Burnham, and S. C. Smith

Appl. Phys. Lett. 59, 2883 (1991); http://dx.doi.org/10.1063/1.105841 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
Data are presented demonstrating the continuous (cw) operation (10–50 °C) of coupled‐stripe In0.5(AlxGa1−x)0.5P–In0.5Ga0.5P multiple quantum well heterostructure (QWH) visible (λ∼655 nm) laser arrays. The ten stripe QWH arrays (3 μm emitters on 4 μm centers) are defined by ‘‘wet’’ oxidation (H2O vapor in N2 carrier gas, 550 °C) of the high gap In0.5(AlxGa1−x)0.5P upper confining layer outside of the active stripes. The gain‐guided arrays exhibit relatively low cw 20 °C threshold current densities (∼1.6 kA/cm2, ∼450 μm cavity) and high output powers of 25 mW per uncoated facet (cw, 20 °C). Optical coupling between stripes results in a near diffraction‐limited single‐lobe far‐field pattern indicative of oscillation in the lowest order supermode of the array (in‐phase operation).
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

LaSrGaO4 substrate gives oriented crystalline YBa2Cu3O7−y films

S. Hontsu, J. Ishii, T. Kawai, and S. Kawai

Appl. Phys. Lett. 59, 2886 (1991); http://dx.doi.org/10.1063/1.105842 (3 pages) | Cited 13 times

Full Text: | Download PDF

Show Abstract
As‐grown YBa2Cu3O7−y (YBCO) thin films of 70 nm thickness have been prepared on LaSrGaO4(001), (100), and (110) single‐crystal substrates at 700 °C using ArF laser ablation deposition. The c‐axis oriented thin films with smooth surface morphology are obtained on LaSrGaO4 (001) and (100) substrates. The zero resistance temperatures (Tc) of the films on the (001) and (100) substrates are 90.0 K, and 88.1 K, respectively. On the (110) substrate, (110) YBCO planes grow epitaxially. The resistance perpendicular to the c axis in this film is 1/3 of that parallel to the c axis, showing Tc⊥=85.9 K and Tc∥=84.4 K, respectively. These results suggest that a LaSrGaO4 substrate having a low dielectric constant is an excellent substrate for the epitaxial growth and device application of high‐Tc YBa2Cu3O7−y superconducting films.
Show PACS
74.70.-b Superconducting materials other than cuprates
74.78.-w Superconducting films and low-dimensional structures
68.55.-a Thin film structure and morphology

Electrical characterization of metal‐insulator‐semiconductor diodes fabricated from laser‐ablated YBa2Cu3O7−δ /yttria‐stabilized zirconia films on Si substrates

Eric M. Ajimine, Felino E. Pagaduan, M. M. Rahman, Cary Y. Yang, Hiroshi Inokawa, David K. Fork, and T. H. Geballe

Appl. Phys. Lett. 59, 2889 (1991); http://dx.doi.org/10.1063/1.106402 (3 pages) | Cited 11 times

Full Text: | Download PDF

Show Abstract
The purpose of this investigation is to study the electrical properties of the YBCO/YSZ/Si metal‐insulator‐semiconductor structure and the yttria‐stabilized zirconia (YSZ)/Si interface. The YBCO and YSZ layers were epitaxially grown in situ on Si by pulsed laser deposition. Current‐voltage measurements of devices fabricated on p‐type Si(100) showed a small leakage current density at 292 K, which decreased further at 80 K. Comparison of capacitance‐voltage measurements at 292 K for frequencies between 10 and 400 kHz showed a large variation of capacitance in the accumulation region demonstrating the presence of mobile ions in the YSZ layer. This variation is less pronounced at 80 K. A negative shift of about 5 V in threshold voltage from 292 to 80 K has been attributed to redistribution of charges in the YSZ buffer layer.
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
74.70.-b Superconducting materials other than cuprates
85.30.Tv Field effect devices

Superconducting race arbiter with subpicosecond timing discrimination

G. S. Lee, R. C. Ruby, H. L. Ko, and A. T. Barfknecht

Appl. Phys. Lett. 59, 2892 (1991); http://dx.doi.org/10.1063/1.105843 (3 pages)

Full Text: | Download PDF

Show Abstract
A novel race arbiter for ultrahigh resolution time discrimination is proposed and has been designed, fabricated, and tested in an all‐niobium Josephson junction technology. The arbiter is based on a pair of quantum flux parametrons, which are single flux quantum switching devices, and is hence called a BiQFP for Bi‐quantum Flux Parametron. High‐speed experiments have demonstrated a rms single‐shot time jitter of ±200–300 fs.
Show PACS
85.25.Dq Superconducting quantum interference devices (SQUIDs)
84.30.Qi Modulators and demodulators; discriminators, comparators, mixers, limiters, and compressors
06.30.Ft Time and frequency

Robust superconducting tapes based on Bi2Sr2Ca2Cu3O10−δ

Qiang Li, J. E. Ostenson, M. M. Fang, and D. K. Finnemore

Appl. Phys. Lett. 59, 2895 (1991); http://dx.doi.org/10.1063/1.105844 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
A rugged conductor based on the Bi2Sr2Ca2Cu3O10−δ has been developed by dispersing Ag throughout the matrix on a micrometer scale. The Ag seems to effectively blunt crack tips and provides regions for plastic flow. The performance degrades relatively little with the strains of handling, soldering and quenching to 77 K. Tapes having a critical current density of 4,500 A/cm2 at 77 K and zero field will show over 20,000 A/cm2 at 4.2 K and zero field. At 20 T for the field perpendicular to the tape surface, these conductors show 2,800 A/cm2 at 4.2 K and 2,200 A/cm2 at 20 K. The critical current density falls roughly linearly with strain and decreases from about 22,000 A/cm2 at zero strain to about 10,000 A/cm2 at 1.0% bending strain.
Show PACS
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.70.-b Superconducting materials other than cuprates

Scanning tunneling microscopy of Pt/Co multilayers on Pt buffer layers

S. L. Tang, P. F. Carcia, D. Coulman, and A. J. McGhie

Appl. Phys. Lett. 59, 2898 (1991); http://dx.doi.org/10.1063/1.105845 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
We have obtained scanning tunneling microscope (STM) images of Pt/Co multilayers sputter‐deposited on Pt buffer layers, as well as images of only the Pt buffer layer. The surface structure of both the Pt/Co multilayers and the Pt layers evolved toward nanometer‐scale crystallites with distinct, mostly six‐sided polygonal grain boundaries with increasing Pt buffer layer thickness. Near‐atomic resolution images revealed monatomic steps and flat terraces for an ∼1000 Å thick Pt layer. From these images we concluded that the texture of the multilayer and the Pt buffer layer improved as the thickness of the Pt buffer layer increased. The correlation of the film structure of the Pt/Co multilayer to its magnetic coercivity is discussed.
Show PACS
75.70.-i Magnetic properties of thin films, surfaces, and interfaces
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.Cd Deposition by sputtering

Submicron probe of polymer adhesion with atomic force microscopy: Dependence on topography and material inhomogeneities

H. A. Mizes, K.‐G. Loh, R. J. D. Miller, S. K. Ahuja, and E. F. Grabowski

Appl. Phys. Lett. 59, 2901 (1991); http://dx.doi.org/10.1063/1.105846 (3 pages) | Cited 58 times

Full Text: | Download PDF

Show Abstract
We have used the atomic force microscope as a nanoindenter to both doped and undoped polycarbonate to probe the dependence of adhesion on topography and material inhomogeneities. Adhesion measurements at the same position are repeatable to 2%. The magnitude of the adhesion is found to decrease as the local curvature on the surface increases. Spatial adhesion maps of doped polymers show structure that is not apparent in surface topography. The spatial resolution of the measurement is at least 300 Å. 
Show PACS
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
FREE

Comment on ‘‘E′ centers and nitrogen‐related defects in silicon dioxide films’’

W. L. Warren and P. M. Lenahan

Appl. Phys. Lett. 59, 2904 (1991); http://dx.doi.org/10.1063/1.105847 (1 page) | Cited 2 times

Full Text: | Download PDF

Show Abstract
The defect centers in silicon dioxide films reported earlier (ref. 1), are discussed. ESR spectra were recorded at higher microwave power in order to facilitate detection of N dangling‐bonds. Such bonds were not observed in any significant concentration.(AIP)
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators
77.55.-g Dielectric thin films
76.30.Mi Color centers and other defects
FREE

Response to ‘‘Comment on ‘E′ centers and nitrogen‐related defects in silicon dioxide films’ ’’

J. H. Stathis, J. Chapple‐Sokol, E. Tierney, and J. Batey

Appl. Phys. Lett. 59, 2905 (1991); http://dx.doi.org/10.1063/1.105848 (1 page)

Full Text: | Download PDF

Show Abstract
The anomalous properties of defect centers observed by Warren and Lenahan (ref. 1), in certain plasma enhanced chemical vapor deposited silica films must be examined in a broader light. The presence of a compensating impurity is indicated.(AIP)
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators
77.55.-g Dielectric thin films
76.30.Mi Color centers and other defects
FREE

Erratum: Simulating growth of Mo/Si multilayers [Appl. Phys. Lett. 59, 1176 (1991)]

W. L. Morgan and D. B. Boercker

Appl. Phys. Lett. 59, 2906 (1991); http://dx.doi.org/10.1063/1.106372 (1 page)

Full Text: | Download PDF

Abstract Unavailable
Show PACS
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
99.10.Cd Errata
FREE

Erratum: A metal grating coupled bound‐to‐miniband transition GaAs multiquantum well/superlattice infrared detector [Appl. Phys. Lett. 59, 1332 (1991)]

Larry S. Yu and Sheng S. Li

Appl. Phys. Lett. 59, 2907 (1991); http://dx.doi.org/10.1063/1.106373 (1 page)

Full Text: | Download PDF

Abstract Unavailable
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
99.10.Cd Errata
Page 2 of 2 Pages Previous Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close