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2 Dec 1991

Volume 59, Issue 23, pp. 2923-3060

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Feasibility of far‐infrared lasers using multiple semiconductor quantum wells

Qing Hu and Shechao Feng

Appl. Phys. Lett. 59, 2923 (1991); http://dx.doi.org/10.1063/1.105849 (3 pages) | Cited 26 times

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A feasibility study is performed for a new semiconductor multiple quantum well far‐infrared (THz) laser device, based on selective injection of electrons into an upper subband, and selective removal from a lower subband of a quantum well, using quantum‐well energy filters. Photon confinement is achieved between doped injector and collector semiconductor contacts which also serve as good photon reflectors. The lasing threshold current density is estimated to be in the range of Jth∼130 A/cm2 at 5 THz. Thus the feasibility of a far‐infrared laser based on this design and operating at cryogenic temperatures (≤10 K) seems quite promising.
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42.60.By Design of specific laser systems
78.30.Fs III-V and II-VI semiconductors
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Efficient energy extraction from a diode‐pumped Q‐switched Tm,Ho:YLiF4 laser

B. T. McGuckin, R. T. Menzies, and H. Hemmati

Appl. Phys. Lett. 59, 2926 (1991); http://dx.doi.org/10.1063/1.105850 (3 pages) | Cited 14 times

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The operation of a diode‐laser pumped thulium, holmium yttrium–lithium–fluoride laser (Tm,Ho:YLF) in Q‐switched mode is reported. Output energies of 220 μJ in pulses of 22 ns duration are recorded at Q‐switch frequencies commensurate with an effective upper laser level lifetime of 6 ms. This lifetime is appreciably longer than that observed in other hosts permitting stored energy extraction of 64%, close to the projected maximum performance from these materials.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Self‐aligned InGaAs/GaAs/InGaP quantum well lasers prepared by gas‐source molecular beam epitaxy with two growth steps

Y. K. Chen, M. C. Wu, J. M. Kuo, M. A. Chin, and A. M. Sergent

Appl. Phys. Lett. 59, 2929 (1991); http://dx.doi.org/10.1063/1.105854 (3 pages) | Cited 15 times

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Index‐guided self‐aligned InGaAs/GaAs/InGaP quantum well lasers are fabricated by gas‐source molecular beam epitaxy in two growth sequences on a GaAs substrate for the first time. The use of aluminum‐free InGaP as cladding layers permits regrowth steps without the problem with the oxidation of aluminum alloys. A patterned n‐InGaP current confinement layer is used to provide index guiding as well as current blocking. Preliminary results from coated 2.5‐μm‐wide and 508‐μm‐long devices show a room temperature continuous wave lasing threshold current of 12 mA with an external differential quantum efficiency of 0.68 mW/mA and a characteristic temperature of 130 K from 30 to 75 °C.
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42.60.By Design of specific laser systems
42.82.-m Integrated optics
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Observation of third order optical nonlinearity due to intersubband transitions in AlGaAs/GaAs superlattices

D. Walrod, S. Y. Auyang, P. A. Wolff, and M. Sugimoto

Appl. Phys. Lett. 59, 2932 (1991); http://dx.doi.org/10.1063/1.105827 (3 pages) | Cited 45 times

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We report the first observations of large third order optical nonlinearities in AlGaAs/GaAs superlattices due to intersubband transitions. The process is triply resonant when the first intersubband transition matches the radiation from CO2 lasers. The intersubband relaxation time has also been estimated from the dispersion of χ(3) with the laser difference frequency Δω and found to be in good agreement with other published values. The magnitude and frequency dependence of the intersubband mechanism have been calculated using the diagrammatic technique.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
73.61.Ey III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Large photoinduced birefringence in an optically nonlinear polyester polymer

Yongqiang Shi, William H. Steier, Luping Yu, Mai Chen, and Larry R. Dalton

Appl. Phys. Lett. 59, 2935 (1991); http://dx.doi.org/10.1063/1.105828 (3 pages) | Cited 36 times

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A nonlinear optical polyester with disperse red side groups exhibited a stable photoinduced birefringence, from 0.14 at 850 nm to 0.21 at 633 nm, after exposure to linearly polarized short‐wavelength visible or ultraviolet light. Thin‐film wave plates, birefringent diffraction gratings and waveguides were written in this polymer using photoexposure. Thin‐ film wave plates of <1 μm thickness showed ≳π/4 phase delay and good temporal stability. A 9:1 diffraction efficiency ratio of the two polarization eigenmodes was measured from thin birefringent gratings. This ratio is in good agreement with the theoretical prediction obtained using a simple three‐level model.
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42.65.-k Nonlinear optics
42.79.-e Optical elements, devices, and systems
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light
78.20.Fm Birefringence

Two‐photon absorption in 4‐butoxycarbonylmethylurethane polydiacetylene waveguides

J. E. Ehrlich, J. D. Valera, A. Darzi, and A. C. Walker

Appl. Phys. Lett. 59, 2938 (1991); http://dx.doi.org/10.1063/1.105829 (3 pages) | Cited 5 times

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The strong confinement of light in planar‐optical waveguides has been used to measure the two‐photon absorption coefficient, β, in 4‐butoxycarbonylmethylurethane polydiacetylene (4BCMU) thin films. Prisms were used to couple the 30–60 ps pulses (up to 10 μJ) from a mode‐locked YAG laser (λ=1.06 μm) into the thin‐film waveguides. A simple analytical theory is compared with the experimental results to give a value of β≊4×10−3 cm/MW.
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42.79.Gn Optical waveguides and couplers
78.66.Qn Polymers; organic compounds
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Many‐body effects in the gain spectra of strained quantum wells

M. F. Pereira, S. W. Koch, and W. W. Chow

Appl. Phys. Lett. 59, 2941 (1991); http://dx.doi.org/10.1063/1.105830 (3 pages) | Cited 16 times

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A many‐body theory for the optical susceptibility in highly excited strained‐layer quantum wells is presented. Gain spectra are computed for the example of InxGa1−xAs/InP and different In concentrations, yielding zero, tensile, and compressive strain.
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42.55.Px Semiconductor lasers; laser diodes
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Hybrid soliton pulse source using a silica waveguide external cavity and Bragg reflector

P. A. Morton, R. Adar, R. C. Kistler, C. H. Henry, T. Tanbun‐Ek, R. A. Logan, D. L. Coblentz, A. M. Sergent, and K. W. Wecht

Appl. Phys. Lett. 59, 2944 (1991); http://dx.doi.org/10.1063/1.105806 (3 pages) | Cited 5 times

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We describe the first results for a hybrid soliton pulse source, combining a mode‐locked semiconductor laser with a silica waveguide external cavity and Bragg reflector. Near transform limited pulses at 1.55 μm have been obtained at pulse widths and repetition rates compatible with practical soliton transmission system. A novel new mechanism of cavity length detuning is described, which gives the device an extended operating frequency range over which useful mode locking occurs.
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42.60.Fc Modulation, tuning, and mode locking
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.79.Dj Gratings
42.81.Wg Other fiber-optical devices

Laser‐induced fluorescence on Hg+ in Hg‐Ar discharges

R. C. Wamsley, T. R. O’Brian, K. Mitsuhashi, and J. E. Lawler

Appl. Phys. Lett. 59, 2947 (1991); http://dx.doi.org/10.1063/1.105807 (3 pages) | Cited 2 times

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The density of ground‐state mercury ions in the cathode region of a fluorescent‐lamp‐like discharge is measured using laser‐induced fluorescence (LIF) at 194.2 nm. LIF is used to make relative density measurements with good spatial resolution and a wide dynamic range while a previously reported absorption technique is used to provide the absolute normalization for these maps.
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.80.Dy Low-field and Townsend discharges
33.50.Dq Fluorescence and phosphorescence spectra

Cumulative laser irradiation effects on ions in the plume of YBa2Cu3O7−δ and particulates at the film surface

H. Izumi, K. Ohata, T. Sawada, T. Morishita, and S. Tanaka

Appl. Phys. Lett. 59, 2950 (1991); http://dx.doi.org/10.1063/1.105808 (3 pages) | Cited 6 times

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Direct observations of ions in the laser plume of YBa2Cu3O7−δ impinging onto a substrate surface revealed the increase of heavy species in the plume after multiple laser pulses on the YBa2Cu3O7−δ target. The beginning of heavy species emission from the target was observed at around 100 laser beam pulses (1 J/cm2) in our experiments. Particulate formation at the film surface was observed in the film deposited under this condition.
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74.70.-b Superconducting materials other than cuprates
74.78.-w Superconducting films and low-dimensional structures
79.20.Ds Laser-beam impact phenomena
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Study of the changes in the infrared transmission of SiO2 spin‐on‐glass due to ion implantation

Y. Shacham‐Diamand, E. Finkman, Y. Pinkas, and N. Moriya

Appl. Phys. Lett. 59, 2953 (1991); http://dx.doi.org/10.1063/1.105809 (3 pages) | Cited 4 times

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The ion implantation of phosphorus into spin‐on‐glass (SOG) SiO2 thin‐film films modified the infrared transmission spectrum of the films. Two SOG types, polysiloxane and silicate, were ion implanted with doses in the 1×1014–1×1015 cm−2 range and an energy of 40 keV. The Fourier‐transform infrared spectrum of such films on silicon substrates was measured and the results are presented as a function of the implanted dose. The effect of the ion implantation on the silicate SOG was minute while significant changes were observed in the polysiloxane SOG. The major absorption peaks in the transmission spectrum were numerically analyzed and fitted to a set of Lorentzian functions. The peak heights, width, and area were measured. The ion implantation reduces the number of CH3 groups while the location of the Si‐O absorption peak is shifted towards a shorter wavelength, i.e., a denser material. A physical interpretation of the absorption peak dependence on the ion‐implanted dose is presented.
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78.30.Hv Other nonmetallic inorganics
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Reactivity of C60 in pure oxygen

H. S. Chen, A. R. Kortan, R. C. Haddon, M. L. Kaplan, C. H. Chen, A. M. Mujsce, H. Chou, and D. A. Fleming

Appl. Phys. Lett. 59, 2956 (1991); http://dx.doi.org/10.1063/1.105810 (3 pages) | Cited 44 times

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In pure oxygen at moderate temperatures of 200 °C, an fcc C60 transforms into amorphous carbon‐oxygen compounds and the icosahedral C60 molecular structure is destroyed. The maximum oxygen uptake of pure C60, O/C60, is 12. Isothermal TGA transformation curves are sigmoid‐shaped with the kinetic exponent n∼5/2 which conforms with a two‐dimensional nucleation and growth mode. The heat of formation for the carbon‐oxygen compounds is 90 kcal/mol O, and the formation energy for the reaction: 60C (graphite)→C60 molecule is estimated to be ∼600 kcal/mol.
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61.50.Ks Crystallographic aspects of phase transformations; pressure effects
31.70.Ks Molecular solids
64.70.K- Solid-solid transitions

Creation of E′ defects in vitreous SiO2 by energetic electrons produced by x irradiation

D. B. Kerwin and F. L. Galeener

Appl. Phys. Lett. 59, 2959 (1991); http://dx.doi.org/10.1063/1.105811 (3 pages) | Cited 6 times

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From experiments using synchrotron radiation, we present evidence that the spin‐active defects created in v‐SiO2 by x irradiation are predominantly the result of energetic electron damage, rather than the relaxation of the photoionized atoms.
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61.80.Cb X-ray effects
61.43.Fs Glasses
61.43.-j Disordered solids
61.44.Br Quasicrystals
76.30.Mi Color centers and other defects

Material dependence of positron implantation depths

J. A. Baker, N. B. Chilton, K. O. Jensen, A. B. Walker, and P. G. Coleman

Appl. Phys. Lett. 59, 2962 (1991); http://dx.doi.org/10.1063/1.105812 (3 pages) | Cited 16 times

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New experiments and Monte Carlo simulations of positron implantation in gold are presented which, when compared with earlier work on aluminum, clearly demonstrate that the material dependence of positron implantation profiles is not adequately described by the simple mass density scaling factor in the widely used expression for median implantation depths. There is excellent agreement between the experimental results and the simulations which use the Penn dielectric formalism to describe inelastic scattering.
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61.80.Fe Electron and positron radiation effects
72.10.Di Scattering by phonons, magnons, and other nonlocalized excitations
78.70.Bj Positron annihilation

Development of high‐strength, high‐conductivity Cu–Ag alloys for high‐field pulsed magnet use

Y. Sakai, K. Inoue, T. Asano, H. Wada, and H. Maeda

Appl. Phys. Lett. 59, 2965 (1991); http://dx.doi.org/10.1063/1.105813 (3 pages) | Cited 50 times

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A wire‐conductor fabrication method has been developed for Cu–Ag alloys containing 2–60 at. % Ag where high strength and high conductivity conductors are obtained by cold working combined with intermediate heat treatment. The intermediate heat treatment is repeated 3–4 times at 350–450 °C for 1–2 h at appropriate stages of reduction of area. The optimized Cu‐16 at. % Ag alloy wire with 99% reduction of area showed a tensile strength of 1000 MPa and an electrical conductivity of 80% IACS at room temperature. This suggests that the wires fabricated may be very promising for high‐field pulsed magnet use.
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84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.40.Rs Electrical and magnetic properties related to treatment conditions

Influence of silicon oxide on the morphology of HF‐etched Si(111) surfaces: Thermal versus chemical oxide

P. Jakob, P. Dumas, and Y. J. Chabal

Appl. Phys. Lett. 59, 2968 (1991); http://dx.doi.org/10.1063/1.105814 (3 pages) | Cited 52 times

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Infrared reflection‐absorption measurements of the Si‐H stretching vibrations of HF‐etched Si(111) surfaces show that the structure of the H‐passivated surfaces depends strongly on the nature of the initial silicon‐oxide layer. For similar etching conditions, thermal oxides lead to much flatter surfaces than chemical oxides. A new processing sequence involving the removal of thermal oxide by buffered HF (pH=5), followed by etching in a 40% ammonium‐fluoride solution, produces a remarkably homogeneous H/Si(111)‐(1×1) surface, characterized by a 0.05 cm−1 broad Si‐H stretch‐mode.
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81.65.-b Surface treatments
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
78.30.Hv Other nonmetallic inorganics

InGaAs/InP multiple quantum well tunable Bragg reflector

O. Blum, J. E. Zucker, T. H. Chiu, M. D. Divino, K. L. Jones, S. N. G. Chu, and T. K. Gustafson

Appl. Phys. Lett. 59, 2971 (1991); http://dx.doi.org/10.1063/1.105815 (3 pages) | Cited 4 times

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We demonstrate a voltage‐tunable distributed Bragg reflector grown by chemical beam epitaxy that utilizes 31 periods of alternating InGaAs/InP multiple quantum well and bulk InP quarter‐wave layers. We obtain a differential change in transmission of 14% at 1570 nm wavelength for an applied field of 2.25×104 V/cm. We find good agreement between the experimental results and transmission spectra calculated using the optical transmission matrix method.
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42.79.Sz Optical communication systems, multiplexers, and demultiplexers
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Exponential growth of periodic surface ripples generated in laser‐induced etching of GaAs

H. Kumagai, K. Toyoda, H. Machida, and S. Tanaka

Appl. Phys. Lett. 59, 2974 (1991); http://dx.doi.org/10.1063/1.105816 (3 pages) | Cited 6 times

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The exponential growth of periodic surface ripples in laser‐induced etching of GaAs was demonstrated for the first time. The etched depth of the ripple structure increased exponentially with increasing laser irradiation time because of the nonlinear effect of stimulated surface‐plasma‐wave scattering, while the etched depth of holographic grating increased linearly. A small‐signal gain of 5.6%/min was obtained in the growth of the etched depth which was consistent with the theoretical value.
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81.65.-b Surface treatments
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
42.40.My Applications

Intersubband absorption in the conduction band of Si/Si1−xGex multiple quantum wells

H. Hertle, G. Schuberth, E. Gornik, G. Abstreiter, and F. Schäffler

Appl. Phys. Lett. 59, 2977 (1991); http://dx.doi.org/10.1063/1.105817 (3 pages) | Cited 21 times

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The intersubband absorption of electrons in modulation doped Si/Si1−xGex multiple quantum wells has been observed. Various samples with different well widths and carrier densities have been studied. Narrow absorption lines are observed in waveguide geometry. The measured transition energies are in good agreement with self consistent subband calculations.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.-w Optical properties of specific thin films
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Unintentional hydrogen concentration in liquid encapsulation Czochralski grown III–V compounds

B. Clerjaud, D. Côte, C. Naud, M. Gauneau, and R. Chaplain

Appl. Phys. Lett. 59, 2980 (1991); http://dx.doi.org/10.1063/1.105818 (3 pages) | Cited 15 times

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From a combined secondary ion mass spectroscopic and optical absorption investigation, the unintentional hydrogen concentration in III–V compounds grown by the liquid encapsulation Czochralski technique is shown to be about 1016 cm−3. In GaAs materials annealed for few hours at high temperature, this concentration is only in the 1013 cm−3 range.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
63.20.Pw Localized modes
78.30.Fs III-V and II-VI semiconductors

Initial growth mechanism of AlAs on Si(111) by molecular beam epitaxy

T. Kawai, H. Yonezu, Y. Yamauchi, Y. Takano, and K. Pak

Appl. Phys. Lett. 59, 2983 (1991); http://dx.doi.org/10.1063/1.105819 (3 pages) | Cited 2 times

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The initial growth mechanism of AlAs‐on‐Si(111) substrate was investigated. The suppression of three‐dimensional growth was successfully realized at the initial growth stage, which is difficult in the growth of GaAs on Si. The initial growth process was clarified, in which the lattice relaxation proceeded gradually. It took about 30 ML to relax the lattice completely at the growth temperature of 400 °C. GaAs was grown in the two‐dimensional mode on the completely relaxed AlAs on the Si(111) substrate.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.60.Dv Thermal stability; thermal effects

Surface structure of selenium‐treated GaAs (001) studied by field ion scanning tunneling microscopy

H. Shigekawa, T. Hashizume, H. Oigawa, K. Motai, Y. Mera, Y. Nannichi, and T. Sakurai

Appl. Phys. Lett. 59, 2986 (1991); http://dx.doi.org/10.1063/1.106401 (3 pages) | Cited 5 times

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For a selenium‐treated GaAs (001) surface followed by heat treatment at ∼530 °C, we have observed using field ion scanning tunneling microscopy ordered arrays with regular intervals of 4×periodicity in the [110] direction (1.6 nm) to line up in the [110] direction. These ordered arrays are in good agreement with the 4×1 structure previously observed by other methods. In a closer view, the 4×structure was found to be formed by closely placed double rows.
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68.35.Dv Composition, segregation; defects and impurities
73.20.At Surface states, band structure, electron density of states
81.65.-b Surface treatments
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Modified growth kinetics of ion induced yttrium–silicide layers during subsequent thermal annealing

T. L. Alford and J. W. Mayer

Appl. Phys. Lett. 59, 2989 (1991); http://dx.doi.org/10.1063/1.105820 (3 pages) | Cited 4 times

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Yttrium and amorphous silicon bilayers were irradiated with 600‐keV inert ions between −190 and 265 °C. Ion‐induced YSi1.7 layers occurred in those samples irradiated above ≥ (R18)205 °C. These ion‐mixed samples were thermally annealed at temperatures between 325 and 380 °C. The diffusion‐limited growth was observed only in those samples which had an ion‐induced YSi1.7 layer present prior to thermal annealing. This type of growth is distinctly different from the interface limited, nonuniform, and irreproducible growth seen during typical thermal annealing of yttrium and silicon bilayers. This type of growth still occurred in those samples annealed after ion irradiations at ≤190 °C.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Heavily doped p‐ZnSe:N grown by molecular beam epitaxy

J. Qiu, J. M. DePuydt, H. Cheng, and M. A. Haase

Appl. Phys. Lett. 59, 2992 (1991); http://dx.doi.org/10.1063/1.105821 (3 pages) | Cited 153 times

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The growth of p‐ZnSe:N films by molecular‐beam epitaxy, employing a free radical nitrogen source, has been investigated. Using this technique we have obtained p‐type ZnSe with net acceptor concentrations up to 1.0×1018 cm−3, as measured by capacitance–voltage(C–V) profiling−this is the highest ever reported for p‐type ZnSe. By adjusting the flux of active nitrogen and the substrate temperature, films with net acceptor concentrations from 1.0×1016 to 1.0×1018 cm−3 were grown. Evidence of compensation was found in the low temperature photoluminescence and C–V measurements; the degree of compensation depends on the amount of nitrogen incorporated into the film. The dependencies of nitrogen density, net acceptor concentration, and degree of compensation upon the flux of active nitrogen and the substrate temperature are discussed.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Et II-VI semiconductors
85.30.De Semiconductor-device characterization, design, and modeling

Molecular beam epitaxial growth of ultrathin CdTe–CdMnTe quantum wells and their characterization

A. Waag, S. Schmeusser, R. N. Bicknell‐Tassius, D. R. Yakovlev, W. Ossau, G. Landwehr, and I. N. Uraltsev

Appl. Phys. Lett. 59, 2995 (1991); http://dx.doi.org/10.1063/1.105822 (3 pages) | Cited 19 times

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We report the growth and optical characterization of CdTe/CdMnTe single quantum wells with well thicknesses ranging from 60 down to 6 Å. The single quantum wells were grown by standard molecular beam epitaxy without growth interruption and investigated by reflection, photoluminescence (PL), and excitation PL. All structures including the 6‐Å‐thick quantum well exhibit extraordinarily narrow photoluminescence lines. From an analysis of linewidth and Stokes shift of the photoluminescence lines informations on the structure of the CdTe/CdMnTe interfaces are derived. The good quality of those structures made it possible to identify for the first time recombination of two‐dimensional free exciton magnetic polarons.
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78.55.Et II-VI semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
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