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2 Dec 1991

Volume 59, Issue 23, pp. 2923-3060

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Cation site ordering and conduction electron scattering in GaInP2

D. J. Friedman, A. E. Kibbler, and J. M. Olson

Appl. Phys. Lett. 59, 2998 (1991); http://dx.doi.org/10.1063/1.105823 (3 pages) | Cited 19 times

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We present Hall mobility data μ(T) in the range T=300–600 K for GaInP2, an alloy whose band gap has been shown to decrease with increasing compositional ordering. Samples grown to give high ordering are found to have consistently lower mobilities than samples with low ordering, suggesting that the mobility is limited by cluster scattering by ordered domains. We analyze μ(T) in terms of a cluster scattering model developed by Marsh [Appl. Phys. Lett. 41, 732 (1982)] and others to estimate the relative volume fraction of cluster scattering sites in the ordered and disordered material.
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72.20.Fr Low-field transport and mobility; piezoresistance
72.80.Ey III-V and II-VI semiconductors
72.20.Dp General theory, scattering mechanisms

Low dark current p‐i‐n photodiodes with an anomalous dynamic behavior

F. Buchali, R. Behrendt, and G. Heymann

Appl. Phys. Lett. 59, 3001 (1991); http://dx.doi.org/10.1063/1.105824 (2 pages) | Cited 2 times

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Up to now, InGaAs/InP photodiodes are the main detectors for the long‐wavelength region. The dynamic behavior of these devices limits the maximum bitrate of communication systems. We have investigated the dynamic behavior of these heterojunction devices. If the heterojunction lies outside of the space charge region, the heterointerface shows an additional response due to a storage of carriers in the valley of the conduction band. At higher biases the interface lies inside the space charge region and the time response of the interface is negligible and no additional time response was observed.
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85.60.Dw Photodiodes; phototransistors; photoresistors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.20.At Surface states, band structure, electron density of states
71.55.Eq III-V semiconductors

Effect of annealing ambient on the removal of oxide precipitates in high‐dose oxygen implanted silicon

Supapan Seraphin, Stephen J. Krause, Peter Roitman, David S. Simons, and Bernhard F. Cordts

Appl. Phys. Lett. 59, 3003 (1991); http://dx.doi.org/10.1063/1.105825 (3 pages) | Cited 2 times

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The effect of annealing ambient on the precipitate removal processes in high‐dose oxygen implanted silicon [separation by implantation of oxygen (SIMOX)] has been studied with transmission electron microscopy, electron energy‐loss spectroscopy, and secondary ion mass spectroscopy. The rate of removal of oxide precipitates from the top silicon layer in SIMOX is higher during annealing in argon than in nitrogen. The removal is reduced in nitrogen due to the formation of an oxynitride complex at the precipitate surfaces which inhibits oxygen diffusion across the interfaces. Similar effects have been observed for oxide precipitation during nitrogen ambient annealing in bulk silicon.
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61.72.uf Ge and Si
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
61.72.Bb Theories and models of crystal defects

Off‐state leakage currents in n‐channel metal‐oxide‐semiconductor field‐effect transistors with 10‐nm thermally nitrided and reoxidized nitrided oxides as the gate dielectric

S. Fleischer, Z. H. Liu, P. T. Lai, P. K. Ko, and Y. C. Cheng

Appl. Phys. Lett. 59, 3006 (1991); http://dx.doi.org/10.1063/1.105826 (3 pages) | Cited 2 times

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The effects of nitridation and reoxidation on the off‐state leakage currents of n‐channel metal‐oxide‐semiconductor‐field‐effect transistors have been investigated. It is found that nitridation greatly increases the gate leakage in the low‐field range but ensuing reoxidation can effectively reduce it. Nitridation‐induced oxide traps could be responsible for this leakage, along with traps introduced during the source/drain implant. A trap‐assisted tunneling model has been proposed to explain this off‐state gate leakage.
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85.30.Tv Field effect devices
73.40.Gk Tunneling
85.30.De Semiconductor-device characterization, design, and modeling

Modeling of cross‐well carrier transport in a multiple quantum well modulator

D. C. Hutchings, C. B. Park, and A. Miller

Appl. Phys. Lett. 59, 3009 (1991); http://dx.doi.org/10.1063/1.105831 (3 pages) | Cited 23 times

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A self‐consistent time and spatially resolved model is developed to explain the nature of cross‐well transport in multiple quantum well devices. It is this cross‐well transport that sets fundamental limits on the speed of such devices. This model is solved numerically to obtain a fit to experimental excite‐probe data. A good fit to rise times is obtained with resonant tunneling features predicted and observed. It is also predicted that as the transient features in the transmission data relax, many carriers are still bound in the quantum wells.
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42.79.Hp Optical processors, correlators, and modulators
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
73.40.Gk Tunneling
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Model for Si–SiO2 interface state formation during irradiation and during post‐irradiation exposure to hydrogen environment

B. J. Mrstik and R. W. Rendell

Appl. Phys. Lett. 59, 3012 (1991); http://dx.doi.org/10.1063/1.105801 (3 pages) | Cited 9 times

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When the oxide of a previously x‐ray irradiated metal–oxide–semiconductor field‐effect transistor is exposed to a hydrogen environment at room temperature the number of interface traps is observed to double, and the number of fixed oxide traps to decrease by a similar amount. From an analysis of this post‐irradiation behavior we derive a model for the formation of interface states during and immediately after irradiation. In this model holes formed in the oxide during the irradiation split ≡SiH bonds in the oxide to form atomic hydrogen and ≡Si+. At room temperature the atomic hydrogen quickly dimerize to form H2. The H2 is then cracked by the ≡Si+ to form H+. Each H+ is transported to the interface, where it forms an interface state. This model also explains the results of a recent experiment which had seemed to indicate that no H+ was formed in the oxide as a result of irradiation.
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61.80.Cb X-ray effects
85.30.Tv Field effect devices
73.61.Ng Insulators
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Investigation of tilted superlattices for quantum‐wire laser applications

Jong Chang Yi, Nadir Dagli, and Larry A. Coldren

Appl. Phys. Lett. 59, 3015 (1991); http://dx.doi.org/10.1063/1.105802 (3 pages) | Cited 6 times

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A novel quantum‐wire array, known as tilted superlattice, which is formed by direct molecular‐beam epitaxial growth on vicinal surfaces, is analyzed, and its optical properties are assessed for quantum‐wire laser applications.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
85.60.Jb Light-emitting devices
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

Island formation in ultra‐thin InAs/InP quantum wells grown by chemical beam epitaxy

J. F. Carlin, R. Houdré, A. Rudra, and M. Ilegems

Appl. Phys. Lett. 59, 3018 (1991); http://dx.doi.org/10.1063/1.105803 (3 pages) | Cited 58 times

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We have studied the effect of growth interruptions on 2‐monolayers‐thick InAs/InP strained quantum wells (QW) grown by chemical beam epitaxy. The main feature is the formation of up to 8‐monolayers‐thick InAs islands during As2 annealing of the QW. Their formation is characterized by a two to three dimensional transition of the reflection high‐energy electron diffraction pattern and multiple‐lines photoluminescence spectra. An increase of a short range roughness at the InP‐InAs interface due to As2 annealing of InP is also observed.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
78.55.Cr III-V semiconductors
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

High‐temperature hole mobility in strained quantum wells

B. Laikhtman

Appl. Phys. Lett. 59, 3021 (1991); http://dx.doi.org/10.1063/1.105804 (3 pages) | Cited 3 times

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Strained quantum wells are promising candidates on high‐speed p‐channel field‐effect transistors (FET) because of a low effective mass in the split valence band. Here for the first time the high‐temperature mobility of holes is studied taking into account realistic wave functions of split light mass subband. The main limit to the mobility at high temperature is put by LO phonons and only this scattering mechanism is considered here. It is shown that deformation coupling with optical phonons is small in quantum wells with a large splitting between the light‐ and heavy‐hole subbands. Analytical expression for the mobility is obtained. Numerical estimates give the upper limit for the mobility as high as a few thousand cm2/V s.
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73.50.Dn Low-field transport and mobility; piezoresistance
73.61.Ey III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Low nonlinear gain in InGaAs/InGaAlAs separate confinement multiquantum well lasers

A. Grabmaier, A. Hangleiter, G. Fuchs, J. E. A. Whiteaway, and R. W. Glew

Appl. Phys. Lett. 59, 3024 (1991); http://dx.doi.org/10.1063/1.105781 (3 pages) | Cited 19 times

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We have determined the differential gain, nonlinear gain factor, spontaneous emission factor, and the K factor for InGaAs separate confinement multiquantum well lasers with InGaAsP and InGaAlAs barriers using a new parasitic‐free modulation technique. We find that the nonlinear gain factor ϵ is more than four times, and the K factor more than two times lower for lasers with InGaAlAs barriers than for those with InGaAsP barriers. This strongly suggests that InGaAs/InGaAlAs lasers are more suitable for high bandwidth applications.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

YBa2Cu3O7 whiskers grown from the gas phase

R. J. O. Järvinen, E. E. Podkletnov, T. A. Mäntylä, J. T. Laurilla, and T. K. Lepistö

Appl. Phys. Lett. 59, 3027 (1991); http://dx.doi.org/10.1063/1.105782 (3 pages) | Cited 4 times

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YBa2Cu3O7 whiskers were grown by the in situ technique using radio frequency magnetron sputtering in Ar–O2 atmosphere at a substrate temperature of 720 °C on (100) single crystal MgO substrate. High sputtering gas pressures were found to promote the formation of whiskers. Whiskers were found to start their growth from certain platelet crystals. The growth conditions for these whiskers are described and their structure is examined by analytical transmission electron microscope. These results seem to exclude the vapor–liquid–solid growth and propose direct condensation from the vapor.
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74.70.-b Superconducting materials other than cuprates
68.70.+w Whiskers and dendrites (growth, structure, and nonelectronic properties)
81.15.Cd Deposition by sputtering

Weak links and dc SQUIDS on artificial nonsymmetric grain boundaries in YBa2Cu3O7−δ

Z. G. Ivanov, P. Å. Nilsson, D. Winkler, J. A. Alarco, T. Claeson, E. A. Stepantsov, and A. Ya. Tzalenchuk

Appl. Phys. Lett. 59, 3030 (1991); http://dx.doi.org/10.1063/1.105783 (3 pages) | Cited 141 times

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We have studied weak links and dc–SQUIDs made from pulsed laser deposited YBa2Cu3O7−δ thin films on Y–ZrO2 bicrystal substrates. The transport properties of the weak links were studied as a function of the misorientation angle (θ) between the two halves of the bicrystal and an exponential dependence of the weak link critical current density was observed for angles up to 40° at 77 K. Josephson effects with clear microwave and magnetic field responses were observed. An optimum dc–SQUID performance at 77 K was obtained for θ=32°. At this temperature, we achieved a periodic magnetic field response with a modulation depth of 12 μV.
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74.70.-b Superconducting materials other than cuprates
74.50.+r Tunneling phenomena; Josephson effects
85.25.Dq Superconducting quantum interference devices (SQUIDs)

Penetration depth and microwave loss measurements with a YBa2Cu3O7−δ/LaAlO3/YBa2Cu3O7−δ trilayer transmission line

J. M. Pond, K. R. Carroll, J. S. Horwitz, D. B. Chrisey, M. S. Osofsky, and V. C. Cestone

Appl. Phys. Lett. 59, 3033 (1991); http://dx.doi.org/10.1063/1.105784 (3 pages) | Cited 61 times

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A trilayer YBa2Cu3O7−δ/LaAlO3/YBa2Cu3O7−δ transmission line was fabricated to measure the penetration depth of the high‐temperature superconducting layers, to determine the microwave losses, and to demonstrate the potential for practical high‐temperature superconductor multilayer microwave circuits. All layers were deposited onto a (100) MgO substrate by pulsed laser deposition. The superconducting films are c‐axis oriented with critical temperatures of 89 K. From the phase velocity measurements, the penetration depth was found to be consistent with weak‐coupled BCS theory in the local limit with a zero‐temperature value of 135 nm. A simple phenomenological temperature dependence for the penetration depth is also presented. This successful trilayer fabrication process, besides allowing the determination of the penetration depth and microwave loss, also expands the possible applications of the high‐temperature superconductors.
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74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates
74.25.Ha Magnetic properties including vortex structures and related phenomena
85.25.Qc Superconducting surface acoustic wave devices and other superconducting devices

YBa2Cu3O7−x‐Y2O3 system and in situ deposition of trilayer heterostructures by coevaporation

Q. Y. Ying, C. Hilbert, N. Kumar, D. Eichman, M. Thompson, H. Kroger, and D. M. Hwang

Appl. Phys. Lett. 59, 3036 (1991); http://dx.doi.org/10.1063/1.105785 (3 pages) | Cited 17 times

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We have deposited YBa2Cu3O7−x‐Y2O3‐YBa2Cu3O7−x heterostuctures by an in situ electron‐beam coevaporation technique. Physical and chemical properties of Y2O3 were studied. The deposition conditions for Y2O3 and YBa2Cu3O7−x are completely compatible. The crystal structure of Y2O3 provides a close lattice match with YBa2Cu3O7−x and allows oxygen diffusion through Y2O3, so that heteroepitaxy and the tetragonal‐orthorhombic structural transformations of YBa2Cu3O7−x can be achieved. The heterostructures are therefore of high quality. Both the top and the bottom YBa2Cu3O7−x layers are superconducting above 85 K. Tunneling phenomena on junctions fabricated from these trilayers were observed.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
74.70.-b Superconducting materials other than cuprates
74.78.Fk Multilayers, superlattices, heterostructures
74.78.-w Superconducting films and low-dimensional structures

Scanning tunneling microscopy of the surface morphology of YBa2Cu3Ox thin films between 300 and 76 K

John Moreland, Paul Rice, S. E. Russek, B. Jeanneret, A. Roshko, R. H. Ono, and D. A. Rudman

Appl. Phys. Lett. 59, 3039 (1991); http://dx.doi.org/10.1063/1.105786 (3 pages) | Cited 29 times

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Scanning tunneling microscopy (STM) images of YBa2Cu3Ox (YBCO) thin films show different growth mechanisms depending on the deposition method and substrate material. We present images of YBCO films sputter deposited onto MgO and SrTiO3, and laser ablated onto LaAlO3 showing screw dislocation and ledge growth mechanisms. At room temperature we observed an anomalous tunneling conductance near the edge of growth steps which causes a large apparent step‐edge height in the STM image. This effect decreases with decreasing temperature, so that the step height approaches the expected value for one unit cell of 1.2 nm at 76 K. This phenomenon reflects changes in either the surface tunneling barrier or tunneling density of states upon cooling.
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74.70.-b Superconducting materials other than cuprates
74.78.-w Superconducting films and low-dimensional structures
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Imaging of the microwave field distribution in Josephson tunnel junctions

C. A. Krulle, T. Doderer, D. Quenter, R. P. Huebener, R. Pöpel, and J. Niemeyer

Appl. Phys. Lett. 59, 3042 (1991); http://dx.doi.org/10.1063/1.105787 (3 pages) | Cited 5 times

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A new method is introduced for imaging of the standing‐wave patterns inside superconducting tunnel junctions coupled to an external microwave source. The method is based on electron‐beam scanning of the tunnel junctions using the concept of low‐temperature scanning electron microscopy. For two different junction geometries, results are shown which confirm the established models for the propagation of microwaves inside superconducting tunnel junctions.
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74.25.N- Response to electromagnetic fields
85.25.Cp Josephson devices
74.50.+r Tunneling phenomena; Josephson effects

In situ deposition of superconducting YBa2Cu3O7−x and DyBa2Cu3O7−x thin films by organometallic molecular‐beam epitaxy

L. L. H. King, K. Y. Hsieh, D. J. Lichtenwalner, and A. I. Kingon

Appl. Phys. Lett. 59, 3045 (1991); http://dx.doi.org/10.1063/1.105788 (3 pages) | Cited 10 times

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Smooth, c‐axis oriented, superconducting thin films of YBa2Cu3O7−x and DyBa2Cu3O7−x have been grown on (100) MgO by organometallic molecular‐beam epitaxy. To our knowledge this is the first report of this technique for the fabrication of this class of high Tc superconductors. Y (or Dy) β‐diketonate organometallic sources are utilized with Ba and Cu metallic sources. Films are grown in situ by codepositing from these sources in an ozone ambient with a substrate temperature of 700 °C. The use of an active oxygen source (ozone) is required for decomposition of the organometallic sources as well as for the attainment of superconducting films in situ. The films are characterized by Tc’s as high as 85 K and Jc’s of 1.2×106 A/cm2 at 12 K and 2.4×103 A/cm2 at 77 K. In addition to the four point Tc and Jc results, alternating‐current susceptibility measurements are also reported. The composition of the films has been determined by Rutherford backscattering spectroscopy, Auger and secondary ion mass spectroscopy analysis, with the smoothness of the films characterized by scanning tunneling microscopy.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates

Oxygen‐vacancy ordering in Y2Ba4Cu7O15−ϵ

T. Krekels, G. Van Tendeloo, S. Amelinckx, J. Karpinski, E. Kaldis, and S. Rusiecki

Appl. Phys. Lett. 59, 3048 (1991); http://dx.doi.org/10.1063/1.105789 (3 pages) | Cited 4 times

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Y2Ba4Cu7O15−ϵ samples prepared at high oxygen pressures were investigated by means of electron microscopy. Often grains show modulations along the a[100] direction, identified as oxygen‐vacancy chain ordering of the type previously observed in the 123 compound. This identification is suggested by electron diffraction and high resolution data and is supported by image simulations. Compared to the original model of chain ordering in the CuO layer a deformation of the neighboring BaO layers is included here.
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74.70.-b Superconducting materials other than cuprates
61.72.jd Vacancies
61.72.jj Interstitials
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
61.50.Nw Crystal stoichiometry

Monolithic 77 K dc SQUID magnetometer

L. P. Lee, K. Char, M. S. Colclough, and G. Zaharchuk

Appl. Phys. Lett. 59, 3051 (1991); http://dx.doi.org/10.1063/1.105790 (3 pages) | Cited 67 times

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We report the first fabrication of a monolithic dc SQUID magnetometer that operates above 77 K. We have used bi‐epitaxial grain boundary Josephson junctions in YBa2Cu3O7 (YBCO) to produce the SQUID itself while the flux transformer consists of heteroepitaxial layers of YBCO/SrTiO3/LaAlO3/SrTiO3/YBCO. In the circuit fabricated, the SQUID is built on top of the epitaxial layers of the flux transformer. We have used dry etching, ion‐beam cleaning, and photolithographic processing to pattern all the layers. Via contacts and step coverage of the epitaxial wire layers have been achieved without significant degradation of the superconducting properties of any of the three YBCO layers. The magnetometer enhances the magnetic field sensitivity of the bare SQUID by a factor of 127, giving an effective area, dΦ/dB, of 1.9 mm2.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
74.70.-b Superconducting materials other than cuprates
85.40.Hp Lithography, masks and pattern transfer

Epitaxy on vicinal surfaces: The critical flux and the diffusion coefficients

Yan‐Ten Lu and Horia Metiu

Appl. Phys. Lett. 59, 3054 (1991); http://dx.doi.org/10.1063/1.105791 (2 pages) | Cited 2 times

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We examine epitaxial deposition on stepped surfaces to determine how the transition from step flow to island growth depends on the diffusion coefficients, terrace width, and the incident flux.
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68.55.-a Thin film structure and morphology
68.35.Fx Diffusion; interface formation

Nanometer‐scale features produced by electric‐field emission

S. E. McBride and G. C. Wetsel

Appl. Phys. Lett. 59, 3056 (1991); http://dx.doi.org/10.1063/1.105792 (3 pages) | Cited 19 times

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Nanometer‐scale features have been formed in air on metallic surfaces with various tip/sample material combinations (W/Au, Au/Au, Au/Pt, and W/Pt) using a scanning tunneling microscope (STM) instrument. The instrument has sufficient stability, computer control, and in‐process measurement capability to record important processing signals while creating nanoscale patterns. The sample surface can be quantitatively characterized using both tunneling spectroscopy and imaging before and after pulsing the tip‐sample voltage (Vt). Images show that the form of the created features ranges from craters to mounds when Vt exceeds a threshold value, Vc, which is dependent on the tunneling resistance (R). Results of measurement of Vc vs R combined with results of the measurement of tip displacement versus Vt allow the determination of the threshold electric field (Ec). For the W tip and the Pt sample, Ec has been determined to be 0.23 V/Å. Electric fields of this magnitude are sufficient to remove atoms by high‐field emission.
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07.78.+s Electron, positron, and ion microscopes; electron diffractometers
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
79.70.+q Field emission, ionization, evaporation, and desorption
FREE

Comment on ‘‘Observation of two in‐plane epitaxial states in YBa2Cu3O7−δ films on yttria‐stabilized ZrO2’’

Hoi S. Kwok

Appl. Phys. Lett. 59, 3059 (1991); http://dx.doi.org/10.1063/1.105793 (1 page) | Cited 1 time

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The changes in the superconducting properties of YBa2Cu3O7−δ films are due to different growth conditions. They are affected by both the in‐grain properties and overall texture. (AIP)
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74.70.-b Superconducting materials other than cuprates
74.78.-w Superconducting films and low-dimensional structures
FREE

Response to ‘‘Comment on ‘Observation of two in‐plane epitaxial states in YBa2Cu3O7−δ films on yttria stabilized ZrO2’ ’’

S. M. Garrison, N. Newman, B. F. Cole, K. Char, and R. W. Barton

Appl. Phys. Lett. 59, 3060 (1991); http://dx.doi.org/10.1063/1.106426 (1 page) | Cited 1 time

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The superconducting properties of epitaxial YBa2Cu3O7−δ on yttria stabilized ZrO2 and LaAlO3 substrates depend on substrate‐film interactions. The reduction in Jc was observed. (AIP)
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74.70.-b Superconducting materials other than cuprates
74.78.-w Superconducting films and low-dimensional structures
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