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23 Dec 1991

Volume 59, Issue 26, pp. 3351-3496

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High temperature (≳150 °C) and low threshold current operation of AlGaInP/GaxIn1−xP strained multiple quantum well visible laser diodes

T. Katsuyama, I. Yoshida, J. Shinkai, J. Hashimoto, and H. Hayashi

Appl. Phys. Lett. 59, 3351 (1991); http://dx.doi.org/10.1063/1.105723 (3 pages) | Cited 17 times

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High temperature and very low threshold current operation of a separate confinement heterostructure (SCH) AlGaInP/GaxIn1−xP (x=0.43) strained multiple quantum well (SMQW) lasers has been achieved. Continuous wave (cw) operation was observed up to at least 150 °C with an output power of more than 7 mW, which is the highest cw operating temperature ever reported for devices operating in the visible wavelength region. The characteristic temperature between 20 and 80 °C was 130 K. The threshold current and threshold current density at 25 °C were 13.9 mA for a 5×160 μm device and 430 A/cm2 for a 80×770 μm device.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
68.55.-a Thin film structure and morphology

Nonleaky optical waveguides in KNbO3 by ultralow dose MeV He ion implantation

F. P. Strohkendl, D. Fluck, P. Günter, R. Irmscher, and Ch. Buchal

Appl. Phys. Lett. 59, 3354 (1991); http://dx.doi.org/10.1063/1.105724 (3 pages) | Cited 18 times

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Planar optical waveguides in single crystals of KNbO3 were produced by 1 and 2 MeV He ion implantation with doses between 5×1013 and 5×1014 cm−2. We observe nonleaky waveguiding due to an implantation induced increase of nc, the smallest of the three refractive indices of KNbO3. For 2 MeV He ions and a dose of 1014 cm−2 waveguides with typical propagation losses of ∼3 dB/cm have been fabricated. The possibility of producing nonleaky waveguides by ultralow dose implantation promises the creation of complicated channel waveguide structures within minutes.
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42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics
78.66.-w Optical properties of specific thin films
61.80.Jh Ion radiation effects

Terahertz radiation from large aperture Si p‐i‐n diodes

L. Xu, X.‐C. Zhang, D. H. Auston, and B. Jalali

Appl. Phys. Lett. 59, 3357 (1991); http://dx.doi.org/10.1063/1.105725 (3 pages) | Cited 22 times

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Subpicosecond electromagnetic pulses having THz bandwidths have been generated from large aperture Si p‐i‐n diodes under different biases by illumination with fs‐optical pulses. The amplitude and spectral bandwidth of the radiated pulses increases with the reverse bias on the p‐i‐n diode. This effect can be explained by the electric field dependence of the transient drift velocity of the photo‐generated carriers in the intrinsic region of the p‐i‐n diode.
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85.60.Jb Light-emitting devices
73.50.Pz Photoconduction and photovoltaic effects
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Single‐frequency continuous‐wave operation of ring resonator diode lasers

J. P. Hohimer, D. C. Craft, G. R. Hadley, G. A. Vawter, and M. E. Warren

Appl. Phys. Lett. 59, 3360 (1991); http://dx.doi.org/10.1063/1.105730 (3 pages) | Cited 32 times

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We report continuous‐wave room‐temperature operation of a semiconductor ring resonator diode laser with a single Y‐junction outcoupling waveguide. This device with a 150 μm radius and 8‐μm‐wide etched‐rib waveguide has a threshold current of 72 mA and emits up to 1 mW of single‐frequency output. The side‐mode‐rejection ratio of this laser exceeds 22 dBm over a ≳50 mA current range corresponding to a stable operating mode of the laser. Studies of the emission behavior in this and other similar ring lasers suggest that the ring is lasing in ‘‘whispering gallery’’ modes, and also that the Y junction is affecting mode selection in the ring.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

rf‐excited all‐metal waveguide CO2 laser

J. G. Xin, P. Yan, and G. H. Wei

Appl. Phys. Lett. 59, 3363 (1991); http://dx.doi.org/10.1063/1.105701 (3 pages) | Cited 3 times

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In this letter, an rf‐excited, anodized aluminum structure waveguide CO2 laser is presented, which has the advantages of low cost, better cooling, and ease of manufacture. With this structure, we have obtained 12 W EH11 waveguide mode output power from only a 300 mm gain length.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Photorefractive effect at 633 nm in semi‐insulating cadmium sulfide

P. Tayebati, J. Kumar, and S. Scott

Appl. Phys. Lett. 59, 3366 (1991); http://dx.doi.org/10.1063/1.105702 (3 pages) | Cited 5 times

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We report the first observation of the photorefractive effect in cadmium sulfide at low optical power. The maximum gain coefficient measured with no applied field at 633 nm is 0.3 cm−1. The response time scales sublinearly with intensity and is independent of grating spacing. At a maximum intensity of 80 mW/cm2, a response time of 0.9 ms is obtained. The photorefractive sensitivity is the largest among photorefractive material operating in the visible range.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Ey III-V and II-VI semiconductors
71.55.Gs II-VI semiconductors

Transient absorption and fluorescence spectroscopy in fused silica induced by pulsed KrF excimer laser irradiation

N. Leclerc, C. Pfleiderer, J. Wolfrum, K. Greulich, W. P. Leung, M. Kulkarni, and A. C. Tam

Appl. Phys. Lett. 59, 3369 (1991); http://dx.doi.org/10.1063/1.105703 (3 pages) | Cited 6 times

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We have carried out in situ transient absorption and fluorescence spectroscopy measurements in two ‘‘wet’’(OH content ∼0.1%) fused silica samples (Suprasil II from Heraeus Amersil and P‐30 from Shin‐Etsu Quartz Product) during KrF laser irradiation. Both samples exhibit an absorption peak at 210 nm corresponding to the E′ center. For Suprasil II, there is also a 265 nm absorption peak, and both peaks increase with the number of irradiated pulses showing little relaxation after the laser was turned off. The region irradiated with three million pulses at 400 mJ/cm2 fluence ten months ago has a residual absorption of about 10%/cm at 210 nm. On the other hand, the P‐30 shows a rapid increase in the 210 nm absorption in both the unirradiated and previously irradiated regions during the initial irradiation and levels off after a few thousand pulses. There is no residual absorption at the spot irradiated for 63 million pulses ten months ago. However, the initial rate of increase in the previously irradiated spot is twice as high as compared to the unirradiated spot. This suggests the density of the precursor state for the E′ center is higher in the previously irradiated region. The fluorescence intensity at 650 nm increases with the induced absorption for Suprasil II, but is almost independent of the number of irradiation pulses in P‐30. The quasilinear repetition‐rate dependence suggests the fluorescence is transient in nature and relaxes partially between successive laser pulses.
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42.70.Ce Glasses, quartz
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Comparison of timing jitter in external and monolithic cavity mode‐locked semiconductor lasers

D. J. Derickson, P. A. Morton, J. E. Bowers, and R. L. Thornton

Appl. Phys. Lett. 59, 3372 (1991); http://dx.doi.org/10.1063/1.105704 (3 pages) | Cited 37 times

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A comprehensive timing jitter comparison is made for mode‐locked semiconductor lasers using active, passive, and hybrid mode‐locking techniques in both external and monolithic cavity configurations. Active mode locking gives the lowest residual rms timing jitter of 65 fs (150 Hz‐50 MHz), followed by the hybrid and passive mode‐locking techniques. It is found that monolithic cavity devices with all active waveguides have higher timing jitter levels than the comparable external cavity case.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

Laterally injected low‐threshold lasers by impurity‐induced disordering

W. X. Zou, K.‐K. Law, J. L. Merz, R. J. Fu, and C. S. Hong

Appl. Phys. Lett. 59, 3375 (1991); http://dx.doi.org/10.1063/1.105679 (3 pages) | Cited 5 times

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Novel laterally injected lasers were fabricated by impurity‐induced disordering (IID). The laterally injected IID (LID) lasers have a self‐aligned structure and planar configuration; its processing procedures are almost identical to that used for our recently reported vertically injected IID lasers, and are considerably simpler than those of any other laterally injected laser yet reported. The LID lasers have a minimum threshold current Ith=3.2 mA (typical Ith=4 mA) and a maximum light output 11 mW, with a differential quantum efficiency ηd=32% per facet under room‐temperature continuous‐wave operation. The LID lasers can also be injected vertically by deliberately using an n+‐doped (instead of semi‐insulating) GaAs substrate and making additional ohmic contacts on the bottom surface of the wafer. A number of interesting aspects about the LID lasers were revealed by comparing the L‐I characteristics of the laser under different injection modes, and by studying the I‐V characteristics of different combinations of the top and bottom ohmic contacts.
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42.55.Px Semiconductor lasers; laser diodes
66.30.J- Diffusion of impurities
42.82.-m Integrated optics

Picosecond excite and probe nonlinear absorption measurements in CuCl quantum dots

B. Kippelen, R. Levy, P. Faller, P. Gilliot, and L. Belleguie

Appl. Phys. Lett. 59, 3378 (1991); http://dx.doi.org/10.1063/1.105680 (3 pages) | Cited 10 times

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We report nonlinear absorption around the Z3 exciton in CuCl microcrystallites embedded in a glass matrix. Our experiments are performed in a test‐pump configuration with picosecond pulses at low temperature. In addition to a shift and a bleaching of the excitonic resonance, induced absorption on the high‐energy side is found. The nonlinear index changes induced per exciton per unit volume of CuCl quantum dot could be determined by Kramers–Kronig transformations.
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42.70.-a Optical materials
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Low‐threshold and high‐temperature operation of 1.55‐μm self‐aligned ridge‐waveguide multiple‐quantum‐well lasers grown by chemical‐beam epitaxy

K.‐Y. Liou, W. T. Tsang, F. S. Choa, E. C. Burrows, G. Raybon, and C. A. Burrus

Appl. Phys. Lett. 59, 3381 (1991); http://dx.doi.org/10.1063/1.105681 (3 pages) | Cited 2 times

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We describe a low‐threshold, low‐internal‐loss, multiple‐quantum‐well ridge waveguide laser operating at 1.55‐μm wavelength and grown by chemical‐beam epitaxy. With a high‐reflection coating applied to one facet, it can operate CW to 100 °C. The laser exhibits single transverse‐mode output and 6‐GHz bandwidth. Processing utilizes a combination of self‐aligned reactive‐ion etching and wet chemical etching. Nearly 100% threshold and quantum efficiency yield of devices in bar form was obtained as a result of the excellent material uniformity, precision process control, and process uniformity over the wafer. This suggests that the present laser may be a potential candidate for low‐cost light source applications.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
85.60.Jb Light-emitting devices

In situ measurements and numerical simulation of wave‐electron interactions in a crossed‐field amplifier

J. Browning, C. Chan, J. Ye, G. E. Dombrowski, and T. E. Ruden

Appl. Phys. Lett. 59, 3384 (1991); http://dx.doi.org/10.1063/1.105682 (3 pages)

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We report detailed two‐dimensional in situ measurements of electron density inside an injected‐beam crossed‐field amplifier operating at 150 MHz. It is demonstrated that during amplification there is a spatial redistribution of the cycloidal electron beam as electrons are drawn to the anode. These measurements have been compared with a numerical simulation [G. E. Dombrowski, IEEE Trans. Electron. Devices 35, 2060 (1988)] which predicts a change in electron trajectories but gives a larger electron loss than was measured.
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52.27.Jt Nonneutral plasmas
52.35.Mw Nonlinear phenomena: waves, wave propagation, and other interactions (including parametric effects, mode coupling, ponderomotive effects, etc.)
52.65.-y Plasma simulation
84.47.+w Vacuum tubes

Electrostatic probe measurements for microwave plasma‐assisted chemical vapor deposition of diamond

F. M. Cerio and W. A. Weimer

Appl. Phys. Lett. 59, 3387 (1991); http://dx.doi.org/10.1063/1.105683 (3 pages) | Cited 9 times

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The electron energy and density in a diamond microwave plasma‐assisted chemical vapor deposition reactor are determined using a double‐electrostatic‐probe technique. For a reactor feed gas composition of 2% CH4, 1% O2 in H2, electron temperatures of 6 eV and electron densities of ∼1.0×1011 cm−3 were measured. These values are consistent with optical emission spectroscopic results. The electron temperature is not strongly dependent on the amount of O2 added to the reactor feed mixture, indicating that the plasma essentially retains the energetic parameters of a hydrogen plasma.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
52.70.-m Plasma diagnostic techniques and instrumentation

Plastic relaxation of InGaAs grown on GaAs

D. J. Dunstan, P. Kidd, L. K. Howard, and R. H. Dixon

Appl. Phys. Lett. 59, 3390 (1991); http://dx.doi.org/10.1063/1.105684 (3 pages) | Cited 55 times

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We report measurements of the plastic relaxation of InGaAs layers grown above critical thickness on GaAs substrates. The relaxation is accurately hyperbolic, proportional to the reciprocal of the layer thickness, in agreement with a recent geometrical theory of critical thickness [D. J. Dunstan, S. Young, and R. H. Dixon, J. Appl. Phys. 70, 3038 (1991)]. At large thicknesses, work hardening is observed which leads to a residual strain dependent on the original misfit.
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68.55.-a Thin film structure and morphology
81.40.Lm Deformation, plasticity, and creep

Growth and electrical properties of ultrafine fibers

G. W. Webb

Appl. Phys. Lett. 59, 3393 (1991); http://dx.doi.org/10.1063/1.105685 (3 pages) | Cited 3 times

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We report on free‐standing ultrafine fibers formed using the gas‐evaporation method in the presence of electric fields. Materials up to 10 cm in length have been prepared in this way. Electrical measurements on Pd fibers 3 mm in length and about 200–300 Å in diameter are given.
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81.10.Bk Growth from vapor
72.15.-v Electronic conduction in metals and alloys

Impact‐induced failure waves in glass bars and plates

N. S. Brar, S. J. Bless, and Z. Rosenberg

Appl. Phys. Lett. 59, 3396 (1991); http://dx.doi.org/10.1063/1.105686 (3 pages) | Cited 38 times

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Glass bars and plates were subjected to impact loading. Failure waves were observed to propagate behind the compression waves. Material traversed by the failure wave suffers total loss of tensile strength and substantial drop in shear strength. Failure wave propagation velocities exceed the maximum crack propagation speed, but are not constant. In bars, failure wave speed range from 2.3 to 5.2 mm/μs, increasing with increasing impact velocity; in plates, the wave speed is about 2 mm/μs. The failure is ‘‘explosive’’ in nature, leading to radial expansion in bars and an increase in mean stress in plates.
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62.50.-p High-pressure effects in solids and liquids
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure

Electrical resistivity of ultrathin, epitaxial CoGa on GaAs

T. C. Kuo and K. L. Wang

Appl. Phys. Lett. 59, 3399 (1991); http://dx.doi.org/10.1063/1.105687 (3 pages) | Cited 4 times

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The successful growth of ultrathin CoGa on GaAs by MBE is demonstrated. The crystalline quality of the films is verified by in situ RHEED, RBS, and x‐ray rocking curve. Transport studies are performed in the temperature range of 4 to 300 K for layer thickness from 10 to 730 Å, and all the films are found to be electrically continuous. The Markowitz’s model [Phys. Rev. B 15, 3617 (1977)] of the electrical resistivity is applied to analyze the measured data. Finally, the specularly scattering probability of these thin films is studied using Fuchs’ theory [Proc. Cambridge Philos. Soc. 34, 100 (1938)].
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73.61.At Metal and metallic alloys
68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Growth of large, defect‐free pure C60 single crystals

R. L. Meng, D. Ramirez, X. Jiang, P. C. Chow, C. Diaz, K. Matsuishi, S. C. Moss, P. H. Hor, and C. W. Chu

Appl. Phys. Lett. 59, 3402 (1991); http://dx.doi.org/10.1063/1.105688 (2 pages) | Cited 65 times

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Millimeter‐sized single crystals of C60 were grown by sublimation of C60 powder in a vacuum for 6–24 h. The crystals had excellent facets, were free of C70 or solvent, and showed face‐centered cubic symmetry with a very small mosaic spread down to 0.01°.
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81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
81.10.-h Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

Characterization of nanometer scale wear and oxidation of transition metal dichalcogenide lubricants by atomic force microscopy

Yun Kim, Jin‐Lin Huang, and Charles M. Lieber

Appl. Phys. Lett. 59, 3404 (1991); http://dx.doi.org/10.1063/1.105689 (3 pages) | Cited 17 times

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Atomic force microscopy has been used to characterize wear and oxidation of transition metal dichalcogenide surfaces. Sequential images recorded on molybdenum disulfide (MoS2) and niobium diselenide (NbSe2) surfaces show that wear proceeds at defects, and that MoS2 wears at least five times more slowly than NbSe2. Images of thermally treated MoS2 and NbSe2 further demonstrate that oxidation creates surface defects on both materials. However, for similar oxidation conditions, NbSe2 surfaces show extensive degradation, while MoS2 surfaces only exhibit isolated defects. The implications of these results to understanding the tribological properties of the transition metal dichalcogenides are discussed.
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81.40.Pq Friction, lubrication, and wear
81.65.-b Surface treatments

Current gain reduction by 0.45 eV oxygen related level in graded band‐gap AlGaAs base‐emitter of heterojunction bipolar transistors

Kazuo Watanabe, Hajime Yamazaki, and Kazumi Wada

Appl. Phys. Lett. 59, 3407 (1991); http://dx.doi.org/10.1063/1.105690 (3 pages) | Cited 5 times

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There are good indications that the deep level around 0.45 eV induced by oxygen acts as an effective electrical recombination center in heterojunction bipolar transistors with a graded band‐gap AlGaAs emitter‐base junction. The transistor, with a concentration of the 0.45 eV level on the order of about 5×1015 cm−3 in the junction region, shows a very small current gain of 3–4, down from more than 30 at a collector current density of 1×103 A/cm3. This reduction is greater than the previously reported one by the level approximately 0.6 eV in heterojunction bipolar transistors. The level about 0.45 eV is detected from the junction region that has an oxygen atom concentration of more than 1018 cm−3. This level may also act as an optically nonradiative recombination center.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
71.55.Eq III-V semiconductors
85.30.Pq Bipolar transistors
85.30.De Semiconductor-device characterization, design, and modeling

Etchant dependence of surface reconstructions of GaAs surfaces prepared by ultrasonic‐running de‐ionized water treatment

Y. Hirota, Y. Homma, and K. Sugii

Appl. Phys. Lett. 59, 3410 (1991); http://dx.doi.org/10.1063/1.105691 (3 pages) | Cited 7 times

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(001) GaAs surfaces treated with ultrasonic‐running de‐ionized water (U‐RDIW) after NH4OH/H2O2/H2O etching are investigated by reflection high‐energy electron diffraction (RHEED) and by x‐ray photoelectron spectroscopy (XPS). RHEED observations show a spotty (1×1) pattern lying on the 0‐th Laue circle at room temperature, a (2×4) streaky pattern at 310 °C, and a spotty (3×6) pattern after annealing at 370 °C. We discuss the difference in surface stoichiometry after U‐RDIW between the H2SO4‐ and NH4OH‐etched surfaces based on the results of XPS. The experimental results indicate the possibility of controlling the surface stoichiometry of the U‐RDIW‐treated GaAs surfaces by varying the etching solution.
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81.65.-b Surface treatments
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Dv Composition, segregation; defects and impurities

Resonant transmission in the base/collector junction of a bipolar quantum‐well resonant‐tunneling transistor

A. C. Seabaugh, Y.‐C. Kao, W. R. Frensley, J. N. Randall, and M. A. Reed

Appl. Phys. Lett. 59, 3413 (1991); http://dx.doi.org/10.1063/1.105692 (3 pages) | Cited 7 times

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A new transistor effect is demonstrated in a 120 nm base, bipolar quantum‐well, resonant‐tunneling transistor (BiQuaRTT). In this BiQuaRTT, a strong, multiple negative differential resistance (NDR) characteristic is obtained at room temperature with high‐current gain (≳50). The effect is shown to be the consequence of an asymmetric, quantum‐well‐base heterostructure whose shape is controlled by the base/collector bias. Changes in the quantum‐well shape lead to large modulations of the transmission coefficient for quasi‐thermalized minority electrons crossing the quantum‐well base. In this letter, we describe the transport characteristics of these transistors, including also temperature and magnetic field dependence.
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85.30.Pq Bipolar transistors
79.60.Dp Adsorbed layers and thin films
79.70.+q Field emission, ionization, evaporation, and desorption
73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Possible observation of Pb0 and Pb1 centers at irradiated (100)Si/SiO2 interface from electrical measurements

Nobuo Haneji, Lakshmanna Vishnubhotla, and T. P. Ma

Appl. Phys. Lett. 59, 3416 (1991); http://dx.doi.org/10.1063/1.105693 (3 pages) | Cited 19 times

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By the use of ac conductance measurements, we have observed two distinct defects with different capture cross sections at the x‐ray irradiated (100)Si/SiO2 interface. The capture cross section for one defect is a strong function of energy, while the other one is basically independent of energy. There is a strong possibility that these two interface defects correspond to the Pb0 and Pb1 centers seen in the electron spin resonance experiments. The fact that we do not observe the same behavior on (111) samples lends support to this hypothesis.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.-r Electron states at surfaces and interfaces
61.80.Cb X-ray effects

Surface reconstructions of Si(001) observed using reflection‐high‐ energy‐electron diffraction during molecular‐beam epitaxial growth from disilane

S. M. Mokler, W. K. Liu, N. Ohtani, and B. A. Joyce

Appl. Phys. Lett. 59, 3419 (1991); http://dx.doi.org/10.1063/1.105694 (3 pages) | Cited 17 times

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The growth of Si(001) from a gas source molecular‐beam epitaxy system (Si‐GSMBE) using disilane (Si2H6) was investigated. The surface reconstructions occurring between 100–775 °C were studied as a function of both substrate temperature and surface coverage. Further, we report the first observation of (2×2) and c(4×4) reconstructions during growth at substrate temperatures near 645 °C using Si2H6. All growth was found to be initiated by the formation of 3D islands which coalesce at substrate temperatures above 600 °C, following which, growth proceeds in a two‐dimensional (2D) fashion. The Si surface was found to have undergone a series of reconstructions which were related to the number of hydrogen adatoms and Si dimers covering the surface.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.B- Structure of clean surfaces (and surface reconstruction)

X‐ray reflectivity studies of SiO2/Si(001)

T. A. Rabedeau, I. M. Tidswell, P. S. Pershan, J. Bevk, and B. S. Freer

Appl. Phys. Lett. 59, 3422 (1991); http://dx.doi.org/10.1063/1.105695 (3 pages) | Cited 11 times

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X‐ray reflectivity has been utilized in a study of the SiO2/Si interfacial structure for dry oxides grown at room temperature on highly ordered Si(001) surfaces. Scattering near (±110) demonstrates the Si lattice termination of the wafers studied is characterized by a highly ordered array of terraces separated by monoatomic steps. Specular reflectivity data indicate the ‘‘native’’ dry oxide thickness is approximately 5 Å with a 1‐Å vacuum interface width. Residual laminar order in the oxide electron density along the oxide/Si interfacial normal decays exponentially from the oxide/Si interface with a ∼2.7‐Å decay length.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology
81.65.-b Surface treatments
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