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15 Jul 1991

Volume 59, Issue 3, pp. 253-375

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Responses of InP/Ga0.47In0.53As/InP heterojunction bipolar transistors to 1530 and 620 nm ultrafast optical pulses

T. F. Carruthers, I. N. Duling, O. Aina, M. Mattingly, and M. Serio

Appl. Phys. Lett. 59, 327 (1991); http://dx.doi.org/10.1063/1.105585 (3 pages) | Cited 7 times

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An npn InP/Ga0.47In0.53As/InP heterojunction bipolar transistor with a unity‐gain frequency of 15 GHz was illuminated with ultrafast optical pulses at wavelengths of 620 and 1530 nm. The device responded to the pulses with an emitter current transient having a duration of 12 ps, corresponding to a bandwidth of ∼40 GHz. A slower photocurrent component, with a decay time of ∼100 ps, was a sensitive function of base bias and, because of the photocarrier dynamics and the grounded‐collector circuit configuration, could be nulled out.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.47.-p Spectroscopy of solid state dynamics
85.30.Pq Bipolar transistors
85.60.-q Optoelectronic devices

Silicon epitaxy at 230 °C by reactive dc magnetron sputtering and its in situ ellipsometry monitoring

G. F. Feng, M. Katiyar, N. Maley, and J. R. Abelson

Appl. Phys. Lett. 59, 330 (1991); http://dx.doi.org/10.1063/1.105586 (3 pages) | Cited 10 times

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We report epitaxial growth of silicon on Si(100) at 230 °C by reactive dc magnetron sputter deposition. Growth is monitored with in situ multiwavelength ellipsometry to determine the film microstructure. Film crystallinity depends on the partial pressure of hydrogen during deposition, and the best film is obtained with 2 mTorr H2. The films are found to have a bulk density deficit of a few percent and a low‐density layer at the film‐substrate interface. The microstructure is confirmed by transmission electron microscopy measurements. Infrared absorption and thermal hydrogen evolution measurements indicate that a large amount of molecular hydrogen is present at the substrate interface. We discuss the possible roles of hydrogen and particle bombardment in promoting epitaxial growth.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.66.-w Optical properties of specific thin films
81.15.Cd Deposition by sputtering
81.10.Bk Growth from vapor

Controlled growth of 3C‐SiC and 6H‐SiC films on low‐tilt‐angle vicinal (0001) 6H‐SiC wafers

J. A. Powell, J. B. Petit, J. H. Edgar, I. G. Jenkins, L. G. Matus, J. W. Yang, P. Pirouz, W. J. Choyke, L. Clemen, and M. Yoganathan

Appl. Phys. Lett. 59, 333 (1991); http://dx.doi.org/10.1063/1.105587 (3 pages) | Cited 61 times

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We have found that, with proper pregrowth surface treatment, 6H‐SiC single‐crystal films can be grown by chemical vapor deposition (CVD) at 1450 °C on vicinal (0001) 6H‐SiC with tilt angles as small as 0.1°. Previously, tilt angles of greater than 1.5° were required to achieve 6H on 6H at this growth temperature. In addition, 3C‐SiC could be induced to grow within selected regions on the 6H substrate. The 3C regions contained few (or zero) double‐positioning boundaries and a low density of stacking faults. A new growth model is proposed to explain the control of SiC polytype in this epitaxial film growth process.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.65.-b Surface treatments
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Reactive ion etching of SiGe alloys using HBr

Tim D. Bestwick, Gottlieb S. Oehrlein, Ying Zhang, Gerrit M. W. Kroesen, and Edouard de Frésart

Appl. Phys. Lett. 59, 336 (1991); http://dx.doi.org/10.1063/1.105588 (3 pages) | Cited 10 times

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We have studied reactive ion etching of Si1−xGex alloys with x≤0.15 and Ge in HBr plasmas. The etch rate of SiGe increases monotonically with the Ge content of the alloy and for a Si85Ge15 alloy was ≂50% greater than for Si. Etch profiles are identical to those formed in singe‐crystal Si. X‐ray photoelectron spectroscopy studies shown that the surface of the etched SiGe alloys are depleted in Ge and consist of about one monolayer of brominated Si over the alloy.
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61.80.Jh Ion radiation effects
81.65.-b Surface treatments
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
85.40.Hp Lithography, masks and pattern transfer

Epitaxial silicon deposition at 300 °C with remote plasma processing using SiH4/H2 mixtures

S. V. Hattangady, J. B. Posthill, G. G. Fountain, R. A. Rudder, M. J. Mantini, and R. J. Markunas

Appl. Phys. Lett. 59, 339 (1991); http://dx.doi.org/10.1063/1.105589 (3 pages) | Cited 18 times

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Epitaxial Si films have been deposited on Si(100) at 300 °C by remote plasma‐enhanced chemical vapor deposition using SiH4/H2 mixtures with deposition rates as high as 25 Å/min at these low temperatures. Hall measurements of the film show an unintentional doping level of about 1×1017 cm−3 with electron mobilities of 700 cm2 V−1s−1. Critical to the process is the in situ cleaning of the silicon substrate surface prior to deposition.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Use of a valved, solid phosphorus source for the growth of Ga0.5In0.5P and Al0.5In0.5P by molecular beam epitaxy

G. W. Wicks, M. W. Koch, J. A. Varriano, F. G. Johnson, C. R. Wie, H. M. Kim, and P. Colombo

Appl. Phys. Lett. 59, 342 (1991); http://dx.doi.org/10.1063/1.105590 (3 pages) | Cited 33 times

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We report on a new method for the generation of phosphorus beams in molecular beam epitaxy: the use of a valved, solid cracker source. The valved solid source avoids previous difficulties associated with the use of solid phosphorus, and provides an attractive alternative to the use of phosphine. The use of red phosphorus does not interfere with the subsequent growth of high quality arsenides in the same growth chamber. The performance of this valved phosphorus source is illustrated by the growth of two ternary phosphides, Ga0.5In0.5P and Al0.5In0.5P. The quality of the phosphides reported here is comparable to the best results reported by other growth techniques. The effects of composition, growth temperature, and P2 flux on the films’ characteristics are reported. Indium desorption during growth is found to be substantially greater in AlInP than in GaInP.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
07.77.-n Atomic, molecular, and charged-particle sources and detectors

Oxide‐nitride storage dielectrics on smooth and rough polycrystalline silicon layers

P. C. Fazan, A. Ditali, V. Mathews, H. C. Chan, H. E. Rhodes, Y. C. Liu, and C. H. Dennison

Appl. Phys. Lett. 59, 345 (1991); http://dx.doi.org/10.1063/1.105591 (3 pages) | Cited 3 times

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We demonstrate that for the same capacitance value, 9.5‐nm‐thick oxide‐nitride storage dielectrics deposited on rough polycrystalline silicon exhibit a lower leakage current and a higher lifetime than 5.9 nm layers on smooth polycrystalline silicon. Leakage current reduction of more than two orders of magnitude and a lifetime increase of more than three orders of magnitude are reported. These improvements are explained by the nitride bulk‐limited type of conduction. Our data show that textured storage capacitors have all the properties required for efficient fabrication of 64 megabit dynamic random access memories.
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85.30.De Semiconductor-device characterization, design, and modeling
77.55.-g Dielectric thin films
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Plasma immersion ion implantation of SiF4 and BF3 for sub‐100 nm P+/N junction fabrication

X. Y. Qian, N. W. Cheung, M. A. Lieberman, S. B. Felch, R. Brennan, and M. I. Current

Appl. Phys. Lett. 59, 348 (1991); http://dx.doi.org/10.1063/1.106392 (3 pages) | Cited 27 times

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Sub‐100 nm P+/N junctions were fabricated using plasma immersion ion implantation (PIII). With this technique, the silicon wafer was immersed in SiF4/BF3 plasma and biased with a negative voltage. The positively charged ions in the plasma sheath were accelerated by the electric field and implanted into the wafer. The dose rate of PIII can be much higher than that of conventional ion implanter. Whereas the dopant activation behavior is similar. For extremely shallow P+/N junction formation, sample preamorphization and short cycle rapid thermal annealing (RTA) are required. With SiF4 PIII preamorphization followed by BF3 PIII doping and RTA at 1060 °C for 1 s, 80 nm P+/N junctions were successfully obtained. Test diodes fabricated with this technique show good characteristics.
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85.40.Hp Lithography, masks and pattern transfer
85.30.Tv Field effect devices
85.30.Kk Junction diodes
61.72.up Other materials

Time‐resolved phonon‐assisted stimulated emission in AlGaAs‐GaAs quantum wells

S. D. Benjamin, Y. C. Lo, and R. M. Kolbas

Appl. Phys. Lett. 59, 351 (1991); http://dx.doi.org/10.1063/1.105592 (3 pages) | Cited 1 time

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Time‐resolved photoluminescence of phonon‐assisted stimulated emission is reported for the first time. The temporal characteristics of the phonon‐assisted stimulated emission are distinct from the stimulated emission from the quantum states. The phonon‐assisted recombination is always delayed in time with respect to the confined particle transitions and has a larger full width at half maximum than the confined particle transitions. The dynamics of stimulated phonon emission along with the smaller transition probability for the phonon‐assisted process may account for the distinct temporal characteristics. Data are presented on the emission intensity versus wavelength versus time from which the dependence of the delay on excitation intensity is extracted.
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42.55.Px Semiconductor lasers; laser diodes
63.20.K- Phonon interactions
78.55.Cr III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics

Native‐oxide stripe‐geometry In0.5(AlxGa1−x)0.5P‐In0.5Ga0.5P heterostructure laser diodes

F. A. Kish, S. J. Caracci, N. Holonyak, J. M. Dallesasse, A. R. Sugg, R. M. Fletcher, C. P. Kuo, T. D. Osentowski, and M. G. Craford

Appl. Phys. Lett. 59, 354 (1991); http://dx.doi.org/10.1063/1.105593 (3 pages) | Cited 11 times

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Data are presented demonstrating the formation of stable, device‐quality native oxides from high Al composition In0.5(AlxGa1−x)0.5P (x ∼0.9) via reaction with H2O vapor (in N2 carrier gas) at elevated temperatures (≥500 °C). The oxide exhibits excellent current‐blocking characteristics and is employed to fabricate continuous room‐temperature stripe‐geometry In0.5(AlxGa1−x)0.5P‐In0.5Ga0.5P double‐heterostructure laser diodes.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

In situ single‐chamber laser processing of YBa2Cu3O7−δ superconducting thin films on yttria‐stabilized zirconia buffered (100)GaAs

P. Tiwari, S. Sharan, and J. Narayan

Appl. Phys. Lett. 59, 357 (1991); http://dx.doi.org/10.1063/1.105594 (3 pages) | Cited 12 times

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Superconducting YBa2Cu3O7−δ(YBCO) thin films have been deposited in situ on GaAs(100) by laser evaporation using yttria‐stabilized zirconia (YSZ) as a buffer layer. The YSZ buffer layer was deposited at room temperature initially, followed by a deposition at 650 °C. The YBCO layers were deposited subsequently at substrate temperature of 650 °C. All the depositions were carried out in a single chamber equipped with a multitarget holder using KrF excimer laser, λ=248 nm. The morphology and structure of the buffer layer and YBCO films were determined using x‐ray diffraction, scanning electron microscopy, transmission electron microscopy, and Auger spectroscopy. The nature of YSZ films was determined to be polycrystalline with partial texturing. The YBCO superconducting thin films on these YSZ‐coated GaAs specimens exhibited strong (00l) orientation with peak intensities similar to those observed on single‐crystal YSZ substrates. The superconducting transition temperature Tc (onset) of 92 K and Tc0(zero resistance) of 73 K were achieved for YBCO thin films on GaAs with YSZ buffer layers.
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74.78.-w Superconducting films and low-dimensional structures
73.61.Ey III-V semiconductors
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition

High‐transport current density up to 30 T in bulk YBa2Cu3O7 and the critical angle effect

J. W. Ekin, K. Salama, and V. Selvamanickam

Appl. Phys. Lett. 59, 360 (1991); http://dx.doi.org/10.1063/1.105595 (3 pages) | Cited 32 times

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Measurements of the dc transport critical current of oriented‐grained YBa2Cu3O7 have been made using high quality Ag contacts and a high‐current sample mount. The critical‐ current density Jc at 77 K for mutually perpendicular current and magnetic field B in the a,b plane is 8 kA/cm2 at 8 T, decreasing gradually to 3.7 kA/cm2 at 20 T, and remaining over 1 kA/cm2 out to 30 T. High magnetic field measurements of Jc as a function of the angle θ of B with respect to the c axis are also reported. In contrast to earlier results at lower fields (<3 T) the measurements reported here in high fields reveal a Jc vs θ curve with a head‐and‐shoulders shape, consisting of a sharp peak (‘‘head’’) <5° wide for B parallel to the CuO2 planes, and a wide (30° at 9 T, for example) shoulder region on either side of B⊥c, where the transport Jc remains high and constant. Beyond the shoulder region, however, the transport Jc decreases sharply, giving rise to the concept of a critical field angle for application design, defined by the minima in d2Jc/dθ2 at the edge of the shoulders.
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74.70.-b Superconducting materials other than cuprates
74.25.Sv Critical currents
74.25.N- Response to electromagnetic fields

Initial stages of Ga and As growth on EuBa2Cu3O7−y(001)

F. Maeda, H. Sugahara, M. Oshima, and O. Michikami

Appl. Phys. Lett. 59, 363 (1991); http://dx.doi.org/10.1063/1.105596 (3 pages) | Cited 3 times

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The first photoelectron spectroscopy results are presented for Ga and As growth on EuBa2Cu3O7−y(001) (EBCO) surfaces. Growth models are shown that explain these results. In Ga growth, the oxide state Ga initially covers the EBCO surface and then metallic state Ga grows on this surface as islands. On the other hand, As grows only one monolayer as the As oxide form without breaking CuO bonds at the As‐EBCO interface, implying that it may be possible to grow GaAs films on EBCO with the As‐oxide interlayer.
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68.35.Fx Diffusion; interface formation
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
74.70.-b Superconducting materials other than cuprates
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Field dependence of critical currents in polycrystalline Bi‐Pb‐Sr‐Ca‐Cu‐O superconductors

S. Jin, T. H. Tiefel, R. B. van Dover, J. E. Graebner, T. Siegrist, G. W. Kammlott, and R. A. Fastnacht

Appl. Phys. Lett. 59, 366 (1991); http://dx.doi.org/10.1063/1.105597 (3 pages) | Cited 1 time

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The field dependence of Jc in partial‐melt‐processed Bi1.6Pb0.3Sb0.1Sr2Ca2Cu3Ox has been investigated. The samples have a dense, polycrystalline microstructure of the (2223) phase with no significant crystallographic texture, and exhibit Tc(χ)∼105 K and transport Jc(H=0)∼104 A/cm2 at 4.2 K. In high magnetic fields (e.g., H=5 T), the transport Jc is somewhat reduced but is still of substantial value. While the high‐angle grain boundaries in the present, partial‐melt‐processed samples are by no means weakly coupled, the field dependence of the critical current density [Jc(0)/Jc(5 T)∼10] is somewhat stronger than in c‐axis textured samples [Jc(0)/Jc(5 T)∼3]. The grain boundaries in the present polycrystalline samples may thus be viewed, on the average, as ‘‘mild’’ weak links. These results clearly indicate the necessity for grain texturing if the full Jc capability of the BSCCO‐type superconductors is to be exploited.
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74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.70.-b Superconducting materials other than cuprates

Self‐consistency of magnetic domain wall calculation

Amikam Aharoni and J. P. Jakubovics

Appl. Phys. Lett. 59, 369 (1991); http://dx.doi.org/10.1063/1.105598 (3 pages) | Cited 3 times

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Minimum energy states of a rather general domain wall are determined by a set of differential equations. By using these equations, the energy of any of those states is shown to be equal to the value given by an expression that contains second derivatives, and is, therefore, very sensitive to the wall structure. The closeness of the two values can thus be taken as a measure of the closeness of the computed structure to the real energy minimum. This is a generalization of a criterion that has only been used before for 180° walls. Several other cases are treated in detail, and for the particular case of 90° walls, numerical values are given for some published wall structures.
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75.60.Ch Domain walls and domain structure
75.10.-b General theory and models of magnetic ordering

Magnetically ordered amorphous copper ferrite

G. Srinivasan, B. Uma Maheshwar Rao, J. Zhao, and M. S. Seehra

Appl. Phys. Lett. 59, 372 (1991); http://dx.doi.org/10.1063/1.105462 (3 pages) | Cited 14 times

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The first observation of a long‐range magnetic order with planar anisotropy is reported in as‐deposited films of amorphous copper ferrite prepared by rf sputtering techniques. Data on the temperature dependence of the saturation magnetization, in‐plane anisotropy field, and gyromagnetic ratio were obtained on 1‐μm‐thick films sputtered in a 50% oxygen and 50% argon atmosphere. The films show a large magnetization and anisotropy field at room temperature. The low‐temperature magnetization, Curie temperature, and gyromagnetic ratio are in agreement with the values expected for crystalline copper ferrite. A paramagnetic‐to‐antiferromagnetic transition at 50 K is evident in the magnetization data. We propose that the films contain magnetically ordered clusters of copper ferrite and Fe2O3.
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75.30.Cr Saturation moments and magnetic susceptibilities
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.70.Ak Magnetic properties of monolayers and thin films
FREE

Comment on ‘‘Proposal of novel electron wave coupled devices’’

K. P. Martin

Appl. Phys. Lett. 59, 375 (1991); http://dx.doi.org/10.1063/1.105463 (1 page) | Cited 1 time

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Abstract Unavailable
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Gk Tunneling
03.50.De Classical electromagnetism, Maxwell equations
41.20.Jb Electromagnetic wave propagation; radiowave propagation
FREE

Response to ‘‘Comment on ‘Proposal of novel electron wave coupled devices’ ’’

N. Tsukada, A. D. Wieck, and K. Ploog

Appl. Phys. Lett. 59, 375 (1991); http://dx.doi.org/10.1063/1.105464 (1 page)

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Abstract Unavailable
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Gk Tunneling
03.50.De Classical electromagnetism, Maxwell equations
41.20.Jb Electromagnetic wave propagation; radiowave propagation
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