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22 Jul 1991

Volume 59, Issue 4, pp. 381-490

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Large nonresonant third‐order hyperpolarizabilities of organic charge‐transfer complexes

Qihuang Gong, Zongju Xia, Y. H. Zou, Xiansheng Meng, Lin Wei, and Fu‐mian Li

Appl. Phys. Lett. 59, 381 (1991); http://dx.doi.org/10.1063/1.105465 (3 pages) | Cited 14 times

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Large nonresonant third‐order hyperpolarizabilities, γ1111, for solutions of three organic charge‐transfer complexes in tetrahydrofuran have been measured. The values obtained for nonresonant γ1111 are 5.8×10−32 esu for Perylene/tetracyanoethylene, 1.2×10−32 esu for Pyrene/tetracyanoethylene, and 7.2×10−33 esu for Naphthanthracene/tetracyanoethylene. The corresponding values of the third‐order susceptibility χ(3)1111 for the solid state are estimated to be 1.0×10−9 esu, 2.3×10−10 esu, and 1.3×10−10 esu, respectively.
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42.70.-a Optical materials
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Second‐harmonic generation in ion‐implanted quartz planar waveguides

L. Babsail, G. Lifante, and P. D. Townsend

Appl. Phys. Lett. 59, 384 (1991); http://dx.doi.org/10.1063/1.105466 (3 pages) | Cited 13 times

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We report the first example of second‐harmonic generation in a quartz ion‐implanted waveguide. The example operated with low‐power pumping near 783 nm. The harmonic production near 392 nm follows a square law dependence. A detailed fit of the pumping efficiency with wavelength suggests there is a phase match throughout the length (z propagating) of the sample. The mode match used was between TE0 of the fundamental and TE2 of the harmonic (ordinary index).
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Gn Optical waveguides and couplers
42.70.-a Optical materials
61.72.up Other materials

Theoretical study of a vacuum ultraviolet F2 excimer lamp (157 nm) excited by microwave discharge

Toshiro Hatakeyama, Fumihiko Kannari, and Minoru Obara

Appl. Phys. Lett. 59, 387 (1991); http://dx.doi.org/10.1063/1.105467 (3 pages) | Cited 7 times

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A high‐efficiency operation of a vacuum ultraviolet (VUV) incoherent light source of a F2 excimer lamp [157 nm:F2(D′)‐F2(A′)] excited by a pulsed microwave discharge has theoretically been studied. Despite the low‐pressure (300 Torr) operation, an intrinsic efficiency of 10.6% and a F2(D′) formation efficiency of 17.4% were found to be obtainable at an optimum F2 concentration (0.5%) using He/F2 mixtures. The F2(D′) state is mainly produced by energy transfer reaction from F∗. Using a 300 Torr mixture of He/F2=99.5/0.5(%), a photon extraction efficiency of 60.9% is achievable with a low energy loss (39.1%) by collisional quenching. The corresponding optical output of 50.0 μJ/cm3 is achievable at an excitation rate of 100 W/cm3 and an excitation pulse width of 9.0 μs. Since it can be operated at high repetition frequency of up to 55 kHz using conventional devices, an average output power of 2.75 W/cm3 is achievable.
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52.80.Pi High-frequency and RF discharges
42.55.Lt Gas lasers including excimer and metal-vapor lasers
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light

Negative light‐modulation effect of boron‐doped hydrogenated amorphous silicon

Yoshinobu Maeda, Shigeichi Yamamoto, and Masatoshi Migitaka

Appl. Phys. Lett. 59, 390 (1991); http://dx.doi.org/10.1063/1.105440 (3 pages) | Cited 4 times

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Laser intensity dependence of transmission and the light‐modulation effect of boron‐doped hydrogenated amorphous silicon (a‐Si:H) were investigated with 780 nm laser diodes. Negative intensity dependence, which causes the transmission to decrease as the laser intensity is increased, was observed for B‐doped, but not for undoped a‐Si:H. Moreover, a negative light‐modulation effect was discovered where the constant signal light decreases with increasing control light. To explain these phenomena, a double‐absorption model, which has two absorption processes from a level associated with the impurity and from a valence band, was considered.
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78.66.-w Optical properties of specific thin films
42.60.Fc Modulation, tuning, and mode locking

Photovoltaic transistors based on a steady‐state internal polarization effect in asymmetric semiconductor superlattices

Chun‐Ting Liu and Serge Luryi

Appl. Phys. Lett. 59, 393 (1991); http://dx.doi.org/10.1063/1.105441 (3 pages) | Cited 5 times

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In semiconductor superlattices lacking the reflection symmetry, transient internal polarization fields have previously been reported. We show that a modified structure can generate a steady‐state photovoltage. We then propose a new class of photovoltaic transistors in which this voltage directly controls the conductivity of the transistor channel.  
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42.82.-m Integrated optics
85.60.Dw Photodiodes; phototransistors; photoresistors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Surface recombination effects in soft x‐ray efficiencies

E. L. Benitez, D. E. Husk, C. Tarrio, and S. E. Schnatterly

Appl. Phys. Lett. 59, 396 (1991); http://dx.doi.org/10.1063/1.105442 (3 pages) | Cited 6 times

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We have measured the soft x‐ray efficiencies of a silicon p‐i‐n photodiode and a La2O2S:Tm phosphor over a broad energy range. We have also measured the inelastic electron scattering spectra of the constituent materials and obtained values of optical absorption coefficients versus energy. The energy dependence of the efficiencies is well explained by a model based on surface recombination of electron hole pairs, and the quality of data which can now be obtained from synchrotrons makes possible quantitative fits from which we obtain diffusion length, surface recombination velocity, and bulk quantum efficiency.
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07.85.-m X- and γ-ray instruments
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.55.Hx Other solid inorganic materials
72.40.+w Photoconduction and photovoltaic effects

Intensity and phase noise in microcavity surface‐emitting semiconductor lasers

Govind P. Agrawal and George R. Gray

Appl. Phys. Lett. 59, 399 (1991); http://dx.doi.org/10.1063/1.105443 (3 pages) | Cited 21 times

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The noise characteristics of vertical‐cavity surface‐emitting (VCSE) lasers are studied by using the Langevin rate equations modified suitably to include the enhanced spontaneous emission occurring in such microcavity lasers. The intensity and frequency noise spectra show the effects induced by suppression of relaxation oscillations. However, such a suppression depends on the output power as well as on transverse dimensions of the VCSE laser. The laser linewidth increases considerably as a result of enhanced spontaneous emission.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.50.Lc Quantum fluctuations, quantum noise, and quantum jumps

High‐frequency operation of heavily carbon‐doped Ga0.51In0.49P/GaAs surface‐emitting light‐emitting diodes grown by metalorganic molecular beam epitaxy

T. J. de Lyon, J. M. Woodall, D. T. McInturff, P. D. Kirchner, J. A. Kash, R. J. S. Bates, R. T. Hodgson, and F. Cardone

Appl. Phys. Lett. 59, 402 (1991); http://dx.doi.org/10.1063/1.105444 (3 pages) | Cited 6 times

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Single‐heterostructure light‐emitting diodes (LEDs) consisting of a wide band‐gap N‐Ga0.51In0.49P emitter and a heavily carbon‐doped p‐GaAs active layer have been grown by metalorganic molecular beam epitaxy. Trimethygallium has been utilized to dope the GaAs active layer for a hole concentration of 1.5×1020 cm−3 in order to reduce the radiative lifetime of minority carriers in GaAs. The cw electroluminescent spectra of these LEDs indicate that the injection efficiency of the Ga0.51In0.49P/GaAs heterojunction is not degraded by carbon redistribution, even in the absence of an undoped spacer layer between the GaAs active layer and the Ga0.51In0.49P emitter layer. The transient optical response of the LEDs determines an optical 3 dB bandwidth in the range of 0.6–2.0 GHz. The external brightness of the carbon‐doped LEDs is shown to be approximately a factor of 20 lower than that of double‐heterostructure LEDs containing active layers more moderately doped with Be at 2×1018 cm−3.
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85.60.Jb Light-emitting devices
42.55.Px Semiconductor lasers; laser diodes

Strained multiple quantum well lasers emitting at 1.3 μm grown by low‐pressure metalorganic vapor phase epitaxy

D. Coblentz, T. Tanbun‐Ek, R. A. Logan, A. M. Sergent, S. N. G. Chu, and P. S. Davisson

Appl. Phys. Lett. 59, 405 (1991); http://dx.doi.org/10.1063/1.105445 (3 pages) | Cited 14 times

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Low‐threshold and high‐output power of the first InGaAsP/InP graded index strained multiple quantum well lasers emitting near 1.3 μm wavelength is reported. A continuous wave threshold current of 10 mA and a quantum efficiency of 60% with maximum output power of 100 mW/facet is observed in uncoated lasers having compressively strained InGaAsP quantum wells. With high reflectivity on both facets, a reduced threshold current as low as 3.5 mA is observed. Highest output power of 250 mW was observed in lasers with antireflection‐high reflection coating configuration operating at 10 °C. The improved performance of the lasers is attributed to both the reduced internal absorption loss (6 cm−1) and the suppressed nonradiative recombination in the structure.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Experimental observation of two microwave radiation mechanisms with widely separated frequencies during the output pulse of a high‐voltage virtual cathode oscillator

M. Haworth, R. Adler, B. Anderson, M. Connaughton, W. Dungan, J. Enns, J. Metz, P. Pelletier, R. Platt, J. Polaco, R. Rupp, L. Thode, and D. Voss

Appl. Phys. Lett. 59, 408 (1991); http://dx.doi.org/10.1063/1.105446 (3 pages) | Cited 8 times

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Results from two 4 MV, 100 kA coaxial magnetically insulated transmission line virtual cathode oscillator experiments are presented. In both experiments, two distinct microwave pulses with vastly different frequencies were generated during the beam current pulse. The first, lower frequency pulse was found to be produced by an electron reflexing process, while the second, higher frequency pulse was due to the virtual cathode oscillation mechanism.
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41.75.Ht Relativistic electron and positron beams
52.27.Ny Relativistic plasmas
52.59.Mv High-voltage diodes
84.40.Fe Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.)

Rapid solidification of polymorphic transition metals induced by nanosecond laser pulses

Satish Vitta

Appl. Phys. Lett. 59, 411 (1991); http://dx.doi.org/10.1063/1.105447 (3 pages) | Cited 1 time

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A Nd‐YAG laser giving 5 ns, 266 nm pulses was used to melt and subsequently quench thin, pure metallic films on a liquid Al/Al2O3 substrate at 1010–1012 K s−1. Transmission electron microscopy together with electron diffraction was used to study the competitive nucleation and growth behavior of the crystals from the undercooled melt. In the case of Fe and Co the high‐temperature bcc and fcc structures were retained after laser quenching. Ti and Zr in spite of the structural similarities exhibit different preferences for nucleation from the undercooled melt. In all the metals the solid‐state transformations were completely suppressed and the crystal growth was found to be limited by the collisional frequency of the atoms onto the growing interface.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

High dielectric permittivity in sol‐gel derived SiO2‐As2O3 glasses

A. Datta, Anit K. Giri, and D. Chakravorty

Appl. Phys. Lett. 59, 414 (1991); http://dx.doi.org/10.1063/1.106388 (3 pages) | Cited 7 times

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Glasses in the system x As2O3(1−x) SiO2 with 0.05<x<0.16 have been prepared by sol‐gel route. They exhibit anomalously large dielectric permittivity in the temperature range 275 to 325 K. The permittivity values are found to be in the range 400–100 000 depending on the glass composition and the frequency of measurement. This effect is believed to arise due to a fairly large value of ratio [As5+]/[As3+] in these glasses and its drastic change as a function of temperature.
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77.22.Ch Permittivity (dielectric function)
42.70.Ce Glasses, quartz

Effects of surface pretreatments on nucleation and growth of diamond films on a variety of substrates

A. A. Morrish and Pehr E. Pehrsson

Appl. Phys. Lett. 59, 417 (1991); http://dx.doi.org/10.1063/1.105448 (3 pages) | Cited 70 times

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The effects of surface pretreatments on nucleation and growth of chemical vapor deposited diamond films were studied. The pretreatments included scratching with diamond grit, coating with a low vapor pressure, high thermal stability hydrocarbon oil, and coating with a 100–200‐Å‐thick layer of evaporated carbon. The effects of the treatments on carbide and noncarbide forming materials are described.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
64.60.Q- Nucleation

Enhancement of deposition rates in the reactive sputtering of silicon exposed to an argon‐oxygen plasma

Takeshi Ohwaki and Yasunori Taga

Appl. Phys. Lett. 59, 420 (1991); http://dx.doi.org/10.1063/1.105449 (3 pages) | Cited 4 times

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Silicon oxide films were prepared by the reactive radio frequency (rf) sputtering in an Ar‐O2 plasma. The deposition rates were measured as a function of oxygen mole fraction in the sputtering gas and sputtering power. It was found that the deposition rate was abruptly enhanced at a critical oxygen mole fraction in an Ar‐O2 plasma. This enhancement was attributed to chemical sputtering of the Si target by argon ion bombardment in the oxygen atmosphere. Thus, the reactive sputtering of a Si target in an argon‐oxygen plasma was found to consist of three modes, namely, (i) physical sputtering of oxidized target surface, (ii) chemical sputtering, i.e., release of species having very low energy, and (iii) physical sputtering of metallic target surface.
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81.15.Cd Deposition by sputtering
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
68.55.-a Thin film structure and morphology

GaPSb: A new ternary material for Schottky diode fabrication on InP

S. Loualiche, A. Le Corre, S. Salaun, J. Caulet, B. Lambert, M. Gauneau, D. Lecrosnier, and B. Deveaud

Appl. Phys. Lett. 59, 423 (1991); http://dx.doi.org/10.1063/1.105450 (2 pages) | Cited 11 times

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Despite its excellent transport properties, the low value of the Schottky barrier height on n‐ type InP (0.43 eV) prevents its use in electronic applications. A new InP lattice‐ matched material (GaPSb with 65% Sb) has been grown for the first time by gas source molecular beam epitaxy and studied. The material gap is 0.9 eV and the gold Schottky diode reaches 0.6 eV on this compound. This is the highest barrier ever reported on InP lattice‐matched materials which do not contain aluminum. Continuous and picosecond luminescence results show that the GaPSb/InP is a type II heterostructure with ΔEc=50 meV at 4 K.
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85.30.Hi Surface barrier, boundary, and point contact devices
73.30.+y Surface double layers, Schottky barriers, and work functions
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Cr III-V semiconductors

Gold gettering induced by rapid thermal doping using spin‐on sources

B. Hartiti, J. C. Muller, and P. Siffert

Appl. Phys. Lett. 59, 425 (1991); http://dx.doi.org/10.1063/1.105451 (3 pages) | Cited 4 times

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Transition metals are known to degrade the device performances. Gettering is now widely used to reduce the effects of these contaminants. Rapid thermal processing (RTP) has been shown to advantageously replace conventional long time temperature cycles in various types of applications. Moreover, recent works have evidenced that a gettering of impurities can occur during the RTP cycle. In this letter, we report that RTP diffusion of phosphorus or boron from a spin‐on deposited layer can also induce a gettering effect in silicon. For gold‐contaminated samples, the redistribution of the Au acceptor level is followed by deep level transient spectroscopy measurements. After a 1000 °C/10 s cycle, gold is depleted in the regions below the surfaces, indicating that gettering has occurred. The mechanism of this RTP‐induced gettering is discussed.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Fermi edge singularity and screening effects in the absorption and luminescence spectrum of Si δ‐doped GaAs

J. Wagner, A. Fischer, and K. Ploog

Appl. Phys. Lett. 59, 428 (1991); http://dx.doi.org/10.1063/1.105452 (3 pages) | Cited 18 times

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We have investigated single Si δ‐doped layers in GaAs by photoluminescence and photoluminescence excitation spectroscopy (PLE). When the photogenerated holes are confined by GaAs/AlxGa1−xAs heterointerfaces placed at either side of the doped layer strong radiative recombination is observed from the quasi‐two‐dimensional electron gas associated with the δ‐doping spike. The low‐temperature absorption spectrum involving spatially direct transitions, which was measured by PLE, shows a well resolved enhancement at the Fermi edge. The energy position of the absorption edge is found to be independent of the excitation intensity. The peak energy of the band‐to‐band emission spectrum, in contrast, which involves spatially indirect transitions, shows a shift to higher energies with increasing excitation intensity due to the screening of the space‐charge‐induced potential by photogenerated carriers.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ey III-V semiconductors

Quantum size microcrystals grown using organometallic vapor phase epitaxy

K. Hiruma, T. Katsuyama, K. Ogawa, M. Koguchi, H. Kakibayashi, and G. P. Morgan

Appl. Phys. Lett. 59, 431 (1991); http://dx.doi.org/10.1063/1.105453 (3 pages) | Cited 63 times

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Needle‐shaped quantum size microcrystals as thin as 10 nm have been selectively grown by employing reduced pressure organometallic vapor phase epitaxy using trimethylgallium and arsine as source materials. The microcrystals grown within a SiO2 window area have their growth axes along the [111] direction. Transmission electron diffraction analysis shows that the crystal structure of microcrystals is consistent with the zinc‐blende structure of GaAs. The mechanism for growing the needle‐shaped crystals is similar to a vapor‐liquid‐solid (VLS) equilibrium phase growth model. From photoluminescence measurements at 4.2 K, it is found that the microcrystals show a very distinct spectra for free exciton and neutral acceptor‐bound exciton recombinations, meaning good crystal quality.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology
81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations

Annealing effect on the electrical properties of heavily C‐doped p+GaAs

Kazuo Watanabe and Hajime Yamazaki

Appl. Phys. Lett. 59, 434 (1991); http://dx.doi.org/10.1063/1.105454 (3 pages) | Cited 28 times

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The carrier concentration in heavily carbon‐doped p+‐GaAs epilayers (about 1.3×1020 cm−3) is decreased together with the mobility by annealing at temperatures of 700 °C or higher but not at temperatures of 600 °C or lower. In comparatively lightly C‐doped p+ epilayers (about 3.5×1019 cm−3), the carrier concentration is not decreased by annealing at temperatures from 500 to 850 °C. The deep photoluminescence peak at a wavelength of around 1080 nm accompanied by a hump at around 1420 nm are found only in heavily C‐doped epilayers; the wavelength of this peak is very close to that of the Ga vacancy −the C donor center. The photoluminescence intensity is increased by the annealing at 850 °C but not at 600 °C. The thermal behaviors of the deep photoluminescence levels can well explain those of carrier concentration and mobility if we consider the photoluminescence levels to be the index for the compensation centers.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.40.Rs Electrical and magnetic properties related to treatment conditions
73.50.Dn Low-field transport and mobility; piezoresistance
78.55.Cr III-V semiconductors

Role of polysulfides in the passivation of the InP surface

R. Iyer and D. L. Lile

Appl. Phys. Lett. 59, 437 (1991); http://dx.doi.org/10.1063/1.105455 (3 pages) | Cited 36 times

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Motivated by the disagreement and irreproducibility observed by different groups, including ours, on the effects of passivating compound semiconductors with sulfur, we have attempted in this work to see if dissimilarities in the starting solution can account for variations in final electrical results. Specifically we have tried passivating InP with different ammonium sulfide solutions for metal‐insulator–semiconductor (MIS) type applications. We have observed that InP treated with a polysulfide solution, prepared by bubbling O2 through ammonium sulfide with excess dissolved sulfur results in excellent interfaces, whereas polysulfide‐free solutions have little effect. Interface state densities in the high 1010 cm−2 eV−1 as judged by quasistatic capacitance‐voltage measurements were obtained on polysulfide treated MIS structures coated with indirect plasma‐enhanced chemical vapor deposited SiO2. Low‐temperature photoluminescence spectra show marked differences on polysulfide‐treated InP when compared to InP that was treated with commercially available ammonium sulfide.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
85.40.Ls Metallization, contacts, interconnects; device isolation
78.55.Cr III-V semiconductors
78.30.Fs III-V and II-VI semiconductors

Electron wave diffraction by semiconductor gratings: Rigorous analysis and design parameters

Gregory N. Henderson, Elias N. Glytsis, and Thomas K. Gaylord

Appl. Phys. Lett. 59, 440 (1991); http://dx.doi.org/10.1063/1.105456 (3 pages) | Cited 6 times

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An exact rigorous coupled‐wave analysis has been developed to model ballistic electron wave diffraction by gratings with periodic effective mass and/or potential energy variations. Design expressions have been derived to calculate diffracted angles, to identify evanescent orders, and to identify the Bragg condition. Design expressions for Bragg regime (up to 100% diffraction efficiency in a single order) and Raman–Nath regime (high diffraction efficiency divided among multiple orders) diffraction are presented along with example Ga1−xAlxAs grating designs. Design procedures for ballistic electron switches, multiplexers, spectrometers, and electron waveguide couplers are described.
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85.30.-z Semiconductor devices
41.75.Fr Electron and positron beams
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Optical and electrical properties of InP/InGaAs grown selectively on SiO2‐masked InP

Y. L. Wang, A. Feygenson, R. A. Hamm, D. Ritter, J. S. Weiner, H. Temkin, and M. B. Panish

Appl. Phys. Lett. 59, 443 (1991); http://dx.doi.org/10.1063/1.105457 (3 pages) | Cited 10 times

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Heterostructures of InGaAs/InP have been grown selectively through windows in SiO2‐masked InP substrates using metalorganic molecular beam epitaxy. The structures show high cathodoluminescence efficiency for window sizes down to 5 μm. A significant red shift, consistent with compressive lattice strain, and reduced intensity are observed for smaller features. Anomalous growth is observed near the edges of the windows. Selectively grown InGaAs/InP p‐n junctions and bipolar transistors exhibit excellent electrical characteristics after removal of 1–2 μm of edge material.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

High‐barrier height Schottky diodes on N‐InP by deposition on cooled substrates

Z. Q. Shi, R. L. Wallace, and W. A. Anderson

Appl. Phys. Lett. 59, 446 (1991); http://dx.doi.org/10.1063/1.105458 (3 pages) | Cited 36 times

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Ultrahigh barrier height (ϕB=0.96 eV) Schottky contacts to n‐InP, without an intentionally grown interficial oxide, were formed using metal deposition on a substrate cooled to as low as 77 K [low temperature (LT)]. ϕB = 0.46–0.52 eV for diodes deposited at room temperature (RT=300 K) agree well with previously published results, and give an ideality factor near unity. For the diodes deposited at LT=77 K, the leakage current density (J0) was reduced by more than 6–7 orders of magnitude with respect to the RT diodes. The ϕB for the LT diodes was increased from 0.48 to 0.96 eV for Pd metal and from 0.51 to 0.85 eV for Au metal, respectively. An alteration of the metal‐induced interface states, inhibition of surface segregation of the released In and P atoms, and very uniform metal coverage may be responsible for the distinct differences between the RT and LT diodes.
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85.30.Hi Surface barrier, boundary, and point contact devices
85.30.De Semiconductor-device characterization, design, and modeling

Kinetics of silicide formation in chromium‐amorphous silicon multilayered films

T. E. Schlesinger, R. C. Cammarata, and S. M. Prokes

Appl. Phys. Lett. 59, 449 (1991); http://dx.doi.org/10.1063/1.105459 (3 pages) | Cited 4 times

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Silicide formation in multilayered thin films of chromium and amorphous silicon was investigated by differential scanning calorimetry (DSC). The DSC traces gave a large main peak that was associated with the growth of the silicide. The growth kinetics followed a linear rate law, with an activation energy of 2.6 eV and a pre‐exponential factor of 7.5×107 m/s for the rate constant. An explosive silicide reaction, observed in other metal‐silicon multilayered films, could not be induced in this system.
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81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
64.70.K- Solid-solid transitions
82.20.Pm Rate constants, reaction cross sections, and activation energies

Comparative study of implantation‐induced damage in GaAs and Ge: Temperature and flux dependence

T. E. Haynes and O. W. Holland

Appl. Phys. Lett. 59, 452 (1991); http://dx.doi.org/10.1063/1.105460 (3 pages) | Cited 45 times

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Damage accumulation during ion implantation of 100 keV Si+ into GaAs and Ge has been investigated. A comparison is made of the amount of damage created in GaAs and Ge and its dependence on dose, temperature, and dose rate. General similarities are observed in the dependence of damage in the two materials on dose and temperature. Both materials exhibit a well‐defined transition temperature above which the damage decreases dramatically. This transition occurs near room temperature in GaAs and approximately 112 °C higher in Ge. Furthermore, a strong dose‐rate effect on damage growth is demonstrated in both Ge and GaAs near their respective transition temperatures. The temperature dependence of the damage yield in both materials is compared to that given by the model of Morehead and Crowder [Rad. Eff. 6, 27 (1970)] for a range of ion doses.
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61.72.U- Doping and impurity implantation
61.72.uf Ge and Si
61.80.Jh Ion radiation effects
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