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22 Jul 1991

Volume 59, Issue 4, pp. 381-490

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Density of states distribution in diamond thin films

J. Mort, M. A. Machonkin, and K. Okumura

Appl. Phys. Lett. 59, 455 (1991); http://dx.doi.org/10.1063/1.105461 (3 pages) | Cited 29 times

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Space‐charge‐limited hole currents in nominally undoped diamond thin films have been studied using thin, highly boron‐doped (p+) diamond layers as injecting contacts. The results obtained from these p+‐p‐Si structures have been analyzed to determine, for the first time, the bulk distribution of localized states N(E) in polycrystalline diamond thin films. The values of N(E), covering an energy range of about 0.8–0.6 eV above the valence band, indicate that the density of states at 0.8 eV is about 1015 cm−3 eV−1 but rises rapidly, within the 0.2 eV, to about 1018 cm−3 eV−1.
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71.20.-b Electron density of states and band structure of crystalline solids
72.80.Cw Elemental semiconductors
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Si delta‐doped field‐effect transistors by atmospheric pressure metalorganic chemical vapor deposition

N. Pan, J. Carter, G. S. Jackson, H. Hendriks, X. L. Zheng, and M. H. Kim

Appl. Phys. Lett. 59, 458 (1991); http://dx.doi.org/10.1063/1.105435 (3 pages) | Cited 6 times

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Si delta‐doped GaAs field‐effect transistors (FETs) are demonstrated by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) and characterized by Hall‐effect, capacitance‐voltage (C‐V), and Shubnikov de‐Haas measurements. The Si delta doping was accomplished by interrupting the growth and flowing silane with controlled timing under an arsenic overpressure. Devices with 0.5 μm gate length (Ns=2.2×1012 cm−2) were fabricated with a maximum extrinsic transconductance of 140 mS/mm and a current gain cutoff frequency of 17 GHz. The transconductance as a function of gate voltage showed a plateau region through a range of 1.5 V further supporting spatial confinement of the electrons.
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85.30.Tv Field effect devices
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
72.20.My Galvanomagnetic and other magnetotransport effects

Thermal dissociation energy of the Si‐H complex in n‐type GaAs

G. Roos, N. M. Johnson, C. Herring, and J. S. Harris

Appl. Phys. Lett. 59, 461 (1991); http://dx.doi.org/10.1063/1.105436 (3 pages) | Cited 23 times

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The thermal dissociation kinetics of the hydrogen‐donor complex in n‐type GaAs:Si were determined from bias‐temperature anneals on hydrogenated Schottky‐barrier diodes. The anneal kinetics are approximately first order and yield a thermal dissociation energy for the Si‐H complex of 1.2±0.1 eV. Depth redistribution of the Si‐H complexes both within the depletion layer of biased diodes and in the field‐free region of unbiased diodes suggests that hydrogen in n‐type GaAs can migrate as a negatively charged species.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
66.30.J- Diffusion of impurities
71.55.Ht Other nonmetals

Oxide thickness effect and surface roughening in the desorption of the oxide from GaAs

T. Van Buuren, M. K. Weilmeier, I. Athwal, K. M. Colbow, J. A. Mackenzie, T. Tiedje, P. C. Wong, and K. A. R. Mitchell

Appl. Phys. Lett. 59, 464 (1991); http://dx.doi.org/10.1063/1.105437 (3 pages) | Cited 37 times

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The temperature for thermal desorption of the gallium oxide from GaAs is shown to increase linearly with oxide thickness. In addition, we show by diffuse light scattering that highly polished GaAs substrates roughen during the oxide desorption. These results are interpreted in terms of a model in which the oxide evaporates inhomogeneously.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
81.65.-b Surface treatments

Optimum implantation conditions for ion beam synthesis of buried cobalt silicide layers in Si(100)

E. H. A. Dekempeneer, J. J. M. Ottenheim, D. W. E. Vandenhoudt, C. W. T. Bulle‐Lieuwma, and E. G. C. Lathouwers

Appl. Phys. Lett. 59, 467 (1991); http://dx.doi.org/10.1063/1.105438 (3 pages) | Cited 4 times

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Ion beam synthesis of buried CoSi2 layers in Si(100) (Co+ energy=170 keV, dose=1.7×1017 ions cm−2) is studied as a function of implantation temperature (250→500 °C) and beam current density (1.6→3 μA cm−2). Conventional cross‐section transmission electron microscopy and Rutherford backscattering spectrometry are used to correlate the experimental conditions with the amount of pinholes in the silicide layer and the flatness of the CoSi2/Si interfaces after annealing. Optimum implantation conditions yielding a pinhole‐free buried silicide layer with flat interfaces are obtained.
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61.72.uf Ge and Si
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Textured (100) yttria‐stabilized zirconia thin films deposited by plasma‐enhanced chemical vapor deposition

H. Holzschuh and H. Suhr

Appl. Phys. Lett. 59, 470 (1991); http://dx.doi.org/10.1063/1.105439 (3 pages) | Cited 15 times

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Thin films of yttria‐stabilized zirconia were deposited by plasma‐enhanced chemical vapor deposition on quartz Si(100), Si(111), Ni, and the steels V2A and hastelloy at substrate temperatures (Ts): 673–873 K. The metal β‐diketonates Y(thd)3 and Zr(thd)4 were used as precursors. The fully stabilized fluorite‐type cubic structure was obtained over a wide range of yttria contents from 3.5 to 80 mol % (Ts=773 K). The quality of the films depended on the match of the thermal expansion coefficients of substrate and deposit.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Microstructural characterization of Nb3Al ultrafine multifilamentary superconducting wire by analytical electron microscopy

Y. Wadayama, T. Suzuki, K. Aihara, N. Tada, K. Kamata, S. Sakai, and K. Inoue

Appl. Phys. Lett. 59, 473 (1991); http://dx.doi.org/10.1063/1.105412 (3 pages) | Cited 1 time

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Microstructural characterization of the longitudinal cross section of Nb3Al wires fabricated by an Nb tube composite process is presented. The wire was produced by cold reduction and a subsequent reaction between Nb matrix and Al‐Mg core (final size: ∼ϕ 80 nm) at 950 °C×5 min+750 °C×72 h. The A15 superconducting compound (grain size: 100 nm) and unreacted fibrous Nb were observed in the microstructure. Nb2Al or other phases rarely appeared. The average Al concentration at the A15 grain was 22–23 at. % from x‐ray microanalysis. The critical current density Jc of composite processed wire depended on the grain size of A15, with fine grains providing a high Jc value.
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74.70.Ad Metals; alloys and binary compounds (including A15, MgB2, etc.)
74.25.Sv Critical currents
85.25.Qc Superconducting surface acoustic wave devices and other superconducting devices

Double dc SQUID for flux‐locked‐loop operation

V. Foglietti

Appl. Phys. Lett. 59, 476 (1991); http://dx.doi.org/10.1063/1.105413 (3 pages) | Cited 10 times

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A novel double dc superconducting quantum interference device (SQUID) is proposed. It consists of two SQUIDs with different geometries in cascade configuration. The structure makes the device particularly suitable for flux‐locked‐loop operation without need of a room‐temperature heterodyne modulation circuitry and a matching network between the SQUID and the preamplifier, thus simplifying the readout electronic system. The noise performance is calculated as a function of the electrical parameters of the device. The noise contribution of the room‐temperature preamplifier can be made negligible using <m1;&2p>appropriate SQUID parameters while the slew rate of the system can approach 106Φ0/s.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
07.20.Mc Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment

Anomalous Hall effect in (110)Fe/(110)Cr multilayers

S. N. Song, C. Sellers, and J. B. Ketterson

Appl. Phys. Lett. 59, 479 (1991); http://dx.doi.org/10.1063/1.105414 (3 pages) | Cited 30 times

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We have studied the Hall effect and the magnetoresistance in [110] textured Fe/Cr multilayers grown by electron beam evaporation. We have observed a strong magnetic field dependence of the Hall coefficient as well as a large magnetoresistance. In all cases the Hall voltage is positive. The ordinary Hall coefficient is positive at room temperature and changes sign at low temperatures; this is similar to the behavior of an antiferromagnet but differs from that observed in Fe‐Cr alloys. The extraordinary Hall coefficient Rs is positive and varies with the resistivity ρ as Rs∝ρ2.6, suggesting the importance of interface scattering.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.50.Kj Amorphous and quasicrystalline magnetic materials
72.15.Gd Galvanomagnetic and other magnetotransport effects
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Polymer films formed with monolayer growth steps by molecular layer deposition

Tetsuzo Yoshimura, Satoshi Tatsuura, and Wataru Sotoyama

Appl. Phys. Lett. 59, 482 (1991); http://dx.doi.org/10.1063/1.105415 (3 pages) | Cited 56 times

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Molecular layer deposition is the process in which molecules are stacked on substrates one by one in order of preference in a vacuum. We studied the possibility using two kinds of molecules: pyromellitic dianhydride (A) and 2,4‐diaminonitrobenzene or 4,4′‐diaminodiphenyl ether (B). After forming a layer consisting of A (or B), we supplied molecule B (or A). The film rapidly thickened and became saturated in 10–60 s. The change in thickness induced in this step was about 5 Å, close to the size of the molecules involved. This indicates that a monomolecular layer of B (or A) grew on layer A (or B) and film growth self‐terminated automatically. 15 steps of alternately supplying A and B produced a polymer film 100 Å thick.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Silylation of focused ion beam exposed resists

M. A. Hartney, D. C. Shaver, M. I. Shepard, J. S. Huh, and J. Melngailis

Appl. Phys. Lett. 59, 485 (1991); http://dx.doi.org/10.1063/1.105416 (3 pages) | Cited 3 times

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Silylation processes for lithography involve the selective incorporation of silicon into a polymeric resist, which can then be patterned using an oxygen reactive ion etching plasma. These processes, like other multilayer approaches, have been developed primarily for optical lithography to minimize substrate reflectivity and allow higher resolution. We have extended this technique to exposure with focused beams of Be, Si, Ga, and Au ions with energies between 49 and 240 keV. Conventional focused ion beam exposure of resists relies upon solvent development and requires ion penetration through the entire resist thickness. With a silylation process, however, higher mass or lower energy ions may be used, and the resist thickness is decoupled from the exposure requirements. Resolution of features smaller than 100 nm has been demonstrated.
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85.40.Hp Lithography, masks and pattern transfer
61.80.Jh Ion radiation effects
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Determination of activation energies for diamond growth by an advanced hot filament chemical vapor deposition method

Eiichi Kondoh, Tomohiro Ohta, Tohru Mitomo, and Kennich Ohtsuka

Appl. Phys. Lett. 59, 488 (1991); http://dx.doi.org/10.1063/1.105417 (3 pages) | Cited 50 times

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The activation energies for diamond growth were determined by an advanced hot filament chemical vapor deposition (AHF‐CVD) method, which accurately controls the substrate temperature independently against other CVD parameters. The activation energies, as determined from an Arrhenius plot, were 22–24 kcal/mol in the range of 740–930 °C. These values are the lowest level reported in the literature. Reported growth mechanisms were evaluated in view of the obtained activation energies.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
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