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5 Aug 1991

Volume 59, Issue 6, pp. 621-747

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Monolithic integration of a new optoelectronic device based on a modulation‐doped heterostructure

Y. Honda, I. Suemune, and M. Yamanishi

Appl. Phys. Lett. 59, 621 (1991); http://dx.doi.org/10.1063/1.105403 (3 pages) | Cited 2 times

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Monolithic integration of a new type of optoelectronic device which functions not only as a lateral‐current‐injection laser but also as a junction field‐effect transistor based on a modulation‐doped heterostructure is proposed and demonstrated for the first time. The static and dynamic modulation characteristics of the integrated device were studied. The dynamic on/off ratio of 9 in the light output was observed with the preliminary modulation experiment at the repetition frequency of 50 MHz.
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85.60.-q Optoelectronic devices
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.30.Tv Field effect devices

Ultrashort pulse generation from a Q‐switched AlGaAs laser with cw injection

N. Stelmakh, J‐M. Lourtioz, and A. Barthelemy

Appl. Phys. Lett. 59, 624 (1991); http://dx.doi.org/10.1063/1.105404 (3 pages) | Cited 2 times

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Injection of a weak cw radiation in a Q‐switched AlGaAs laser diode is shown to produce single‐mode pulses with a quasi‐linear downchirp of very large amplitude. Strong pulse compression can be achieved by using single‐mode dispersive fibers at the laser output. Time‐resolved spectroscopic measurements of the laser pulses are presented. Optical solitary pulses shorter than 2 ps are obtained after compression, which corresponds to a pulse compression factor larger than 15. Although the laser‐fiber coupling is not fully optimized, peak powers exceeding 3 W are measured at the fiber output. These performances are believed to be the best ever reported for an electrically pumped Q‐switched AlGaAs laser diode.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Grating spectrograph in InGaAsP/InP for dense wavelength division multiplexing

C. Cremer, G. Ebbinghaus, G. Heise, R. Müller‐Nawrath, M. Schienle, and L. Stoll

Appl. Phys. Lett. 59, 627 (1991); http://dx.doi.org/10.1063/1.105405 (3 pages) | Cited 22 times

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A grating spectrograph in InGaAsP/InP suitable for use in the wavelength region from 1.2 to 1.6 μm is presented. Experiments for devices with a channel spacing of 3.7 nm and more than 30 channels between 1.48 and 1.59 μm are described. The measured cross talk level is below −25 dB. The devices have only very low polarization sensitivity. This spectrograph is suited for monolithic integration with photodiodes, laser diodes, or optical amplifiers on a single chip.
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07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
42.82.-m Integrated optics
42.79.Dj Gratings
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Two‐photon absorption peculiarities of potassium dihydrogen phosphate crystal at 216 nm

G. G. Gurzadyan and R. K. Ispiryan

Appl. Phys. Lett. 59, 630 (1991); http://dx.doi.org/10.1063/1.105406 (2 pages) | Cited 4 times

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The two‐photon absorption coefficient of potassium dihydrogen phosphate at λ=216 nm was measured to be β=(6.0±0.5)10−10 cm/W. The presence of impurities is shown to increase nonlinear losses at very low intensities, I≊107 W/cm2.
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78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Monolithic two‐dimensional surface‐emitting strained‐layer InGaAs/AlGaAs and AlInGaAs/AlGaAs diode laser arrays with over 50% differential quantum efficiencies

W. D. Goodhue, J. P. Donnelly, C. A. Wang, G. A. Lincoln, K. Rauschenbach, R. J. Bailey, and G. D. Johnson

Appl. Phys. Lett. 59, 632 (1991); http://dx.doi.org/10.1063/1.105407 (3 pages) | Cited 7 times

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Monolithic two‐dimensional surface‐emitting arrays of strained‐layer InGaAs/AlGaAs and AlInGaAs/AlGaAs diode lasers have been fabricated and operated pulsed with low‐threshold current densities and differential quantum efficiencies greater than 50%. The InGaAs/AlGaAs arrays emit at 1.03 μm, while the AlInGaAs/AlGaAs arrays emit at 0.815 μm. Thus, it should be possible to fabricate monolithic arrays with comparable performance over a wide wavelength range. The individual lasers of the arrays are horizontal folded‐cavity devices with two 45° internal reflectors and two top‐surface facets. The design is simple to implement using optical pattern‐generator masks, optical projection printing, and chlorine ion‐beam‐assisted etching in key fabrication steps.
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42.55.Px Semiconductor lasers; laser diodes
85.60.Jb Light-emitting devices
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
81.65.-b Surface treatments

Ultrafast refractive index dynamics in AlGaAs diode laser amplifiers

C. T. Hultgren and E. P. Ippen

Appl. Phys. Lett. 59, 635 (1991); http://dx.doi.org/10.1063/1.105408 (3 pages) | Cited 52 times

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Ultrafast refractive index dynamics in AlGaAs diode laser amplifiers were studied using 440 fs optical pulses. Refractive index changes consistent with a free carrier heating model proposed to explain earlier studies of gain dynamics in diode lasers are exhibited. We also observe an apparently instantaneous refractive index change that corresponds to an n2⊥ of −5×10−12 cm2/W.
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42.55.Px Semiconductor lasers; laser diodes
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Monte Carlo‐fluid hybrid model of the accumulation of dust particles at sheath edges in radio‐frequency discharges

Timothy J. Sommerer, Michael S. Barnes, John H. Keller, Michael J. McCaughey, and Mark J. Kushner

Appl. Phys. Lett. 59, 638 (1991); http://dx.doi.org/10.1063/1.105409 (3 pages) | Cited 63 times

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Particulate contamination (dust) has been observed to accumulate near the sheath‐plasma boundary in both radio‐frequency (rf) and direct‐current (dc) discharges. We have developed and applied a hybrid Monte Carlo‐fluid simulation of electron, ion, and charged dust transport in rf discharges to investigate the dynamics of particulate contamination. The processes governing the transport of charged dust in the model are drift of partially shielded particles in the electric field, collisions with the fill gases, and viscous ion drag arising from Coulomb interactions of particles with ions drifting and diffusing in the plasma. We find that negatively charged dust particles accumulate near the sheath‐plasma boundary, and that transport of the particles is dominated by ion drag.
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52.80.Pi High-frequency and RF discharges
52.25.Fi Transport properties
52.25.Vy Impurities in plasmas
52.65.-y Plasma simulation

Measurements of transmitted diffraction profiles on Bragg angles at π/2

C. Giles and C. Cusatis

Appl. Phys. Lett. 59, 641 (1991); http://dx.doi.org/10.1063/1.105378 (3 pages) | Cited 5 times

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Transmitted diffraction profiles of a thin Ge 620 crystal at Bragg angles around and including π/2 were obtained for different crystal temperatures using Co Kα1 radiation. A grooved crystal monochromator operating at Bragg angles near 89.5°, providing a highly monochromatic beam in the forward direction, is described. Rocking curves widths of 30 arcmin and energy resolution ΔE/E=1.66×10−5 were measured. Great sensitivity with crystal temperature and incident wavelength were observed. An intensity enhancement at the normal incidence position due to multiple diffraction occurrence was detected.
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61.05.cf X-ray scattering (including small-angle scattering)
61.05.cj X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.
07.60.Rd Visible and ultraviolet spectrometers
07.85.-m X- and γ-ray instruments

Surface modification of Bi‐Sr‐Ca‐Cu‐O films deposited in situ by radio frequency plasma flash evaporation with a scanning tunneling microscope

Kazuo Terashima, Minoru Kondoh, Yuzuru Takamura, Hisashi Komaki, and Toyonobu Yoshida

Appl. Phys. Lett. 59, 644 (1991); http://dx.doi.org/10.1063/1.105379 (3 pages) | Cited 10 times

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The surface modifications of as‐grown superconducting Bi‐Sr‐Ca‐Cu‐O (BSCCO) films prepared by radio frequency plasma flash evaporation were carried out with a scanning tunneling microscope (STM). The as‐grown films were identified as highly c‐axis‐oriented, low Tc (80 K) phase Bi2Sr2Ca1Cu2Ox with some residue such as (Sr,Ca)3Cu5Ox from x‐ray diffraction patterns. The as‐grown film deposited at about 750 °C exhibited a superconducting critical temperature Tc of 76 K and a critical current density Jc of 8.8×104 A/cm2 under zero magnetic field at 27 K. The nanometer‐size surface modifications between 2 and 50 nm, especially layered etching, of the prepared BSCCO films were successfully performed by using a STM in air.
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74.78.-w Superconducting films and low-dimensional structures
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
74.70.-b Superconducting materials other than cuprates

Excimer laser etching of transparent conducting oxides

James G. Lunney, Richard R. O’Neill, and Karl Schulmeister

Appl. Phys. Lett. 59, 647 (1991); http://dx.doi.org/10.1063/1.105380 (3 pages) | Cited 15 times

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See Also: Erratum

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Laser etching of transparent conducting films of fluorine‐doped tin oxide and indium‐tin oxide has been investigated using an excimer laser at 248 nm. The etch depth per pulse as a function of laser fluence was measured and compared with the predictions of an explicit finite difference thermal model. Direct laser patterning of these films was demonstrated. The sheet resistance of a 50‐μm‐wide conducting channel formed by laser ablation was measured and compared with the value for the original film.
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81.65.-b Surface treatments
79.20.Ds Laser-beam impact phenomena
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Liquid phase epitaxy of yttrium aluminum garnet: Reduction of growth rate by germanium oxide

D. M. Gualtieri

Appl. Phys. Lett. 59, 650 (1991); http://dx.doi.org/10.1063/1.105381 (3 pages) | Cited 3 times

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Germanium is found to be a growth inhibitor in the liquid phase epitaxy of yttrium aluminum garnet. Germanium oxide additions to PbO/B2O3 fluxed melts for the liquid phase epitaxy of Y3Al5O12 and Ce:Y3Al5O12 on Y3Al5O12 substrates reduce the epitaxial growth rate in an effect similar to that with calcium oxide additions to melts for the growth of Y3Fe5O12. In contrast, cerium oxide additions to Y3Al5O12 melts have no measurable effect on growth rate. Germanium oxide additions reduce the growth rate sensitivity with supercooling, at saturation temperatures near 900 °C, as an essentially linear decreasing function of the germanium oxide concentration, GeO2/(GeO2+2Al2O3), where GeO2 and Al2O3 are the molar concentrations of germanium and aluminum oxide in the melt.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.35.Fx Diffusion; interface formation

Crystal forms by solid‐state recrystallization of amorphous Si films on SiO2

T. Noma, T. Yonehara, and H. Kumomi

Appl. Phys. Lett. 59, 653 (1991); http://dx.doi.org/10.1063/1.105382 (3 pages) | Cited 22 times

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The recrystallization behavior of amorphous silicon films formed by Si+ ion bombardment onto polycrystalline silicon films has been studied. Two crystal forms have been identified by transmission electron microscopy and electron diffraction for the first time. Disk‐shaped crystals are formed as a result of the presence of {111} twin planes parallel to the film surface. Threefold symmetric crystals are formed by the presence of the three {111} twin planes that are not parallel to the film surface. Their feature looks less dendritic due to restricted space of film thickness in which crystal branches may grow. These two crystal forms have 〈111〉 direction normal to the film surface. A model for the formation of these crystals is proprosed in the process of solid‐state recrystallization.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
61.72.Mm Grain and twin boundaries

Silicon epitaxial growth on GaAs using a rapid thermal chemical vapor deposition process

Y. I. Nissim, J. Sapriel, Y. Gao, C. d’Anterroches, J. L. Regolini, and D. Bensahel

Appl. Phys. Lett. 59, 656 (1991); http://dx.doi.org/10.1063/1.105383 (3 pages) | Cited 1 time

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Epitaxial silicon layers are grown on GaAs substrates in a light‐assisted cold wall horizontal reactor. High quality silicon is obtained at the surface when the growth is conducted in a two‐step sequence. The first step is a silane exposure at 700 °C where epitaxial silicon starts to grow and where tensile stress relaxes to form a highly defective layer. The second step is an epitaxial growth of silicon at 800 °C. The crystalline perfection and stress in both the layer and the substrate are characterized by Raman scattering. Cross‐section transmission electron microscopy analysis shows mainly the formation of stacking faults at the interface. Their number reduces as the Si film thickness increases. The rapid thermal chemical vapor deposition does not require arsenic overpressure to protect the GaAs substrate from thermal degradation during epitaxial growth.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology
68.35.Fx Diffusion; interface formation

Magnetotransport of piezoelectric [111] oriented strained quantum wells

R. W. Martin, M. Lakrimi, C. López, R. J. Nicholas, E. T. R. Chidley, N. J. Mason, and P. J. Walker

Appl. Phys. Lett. 59, 659 (1991); http://dx.doi.org/10.1063/1.105356 (3 pages) | Cited 12 times

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We report the first observation of magnetotransport in piezoelectrically active heterostructures. Well‐resolved quantum Hall plateaus and magnetoresistance minima are observed for two‐dimensional hole gases confined in [111] oriented strained‐layer Ga1−xInxSb/GaSb quantum wells with a piezoelectric field, of order 1×105 V/cm. We discuss the enhanced carrier densities induced by the in‐built field and the differences observed between [111]A and [111]B orientations. Comparisons are made with simultaneously grown [001] structures. Stark energy shifts observed in photoluminescence are well accounted for by the estimated electric field.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
72.20.My Galvanomagnetic and other magnetotransport effects
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
77.65.-j Piezoelectricity and electromechanical effects

Experimental studies of proton‐exchanged lithium niobate waveguides using cinnamic acid

E. Y. B. Pun, K. K. Loi, S. A. Zhao, and P. S. Chung

Appl. Phys. Lett. 59, 662 (1991); http://dx.doi.org/10.1063/1.105357 (3 pages)

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Proton‐exchanged planar waveguides in z‐cut LiNbO3 have been fabricated and characterized optically using cinnamic acid as the new proton source. Single‐mode waveguides before and after annealing exhibit propagation losses of 0.81 and 0.33 dB/cm, respectively, measured at 0.633 μm wavelength. The diffusion rate is slower than that of the popular benzoic acid. Post‐annealing changes the refractive index profile from a truncated‐parabolic function to a step function and then a Gaussian‐like profile. The effect of annealing on the surface index change and the waveguide depth increase could be accurately modeled by a power‐law relationship.
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42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics
42.70.-a Optical materials

Compound formation at the interaction of Pd with strained layers of Si1−xGex epitaxially grown on Si(100)

A. Buxbaum, M. Eizenberg, A. Raizman, and F. Schaffler

Appl. Phys. Lett. 59, 665 (1991); http://dx.doi.org/10.1063/1.105358 (3 pages) | Cited 31 times

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The interaction of thin Pd films deposited on strained layers of Si1−xGex epitaxially grown on Si(100) was studied. The Ge concentration in the molecular beam epitaxy grown Si1−xGex films was x=0.16, and their thickness 2300 Å. A highly textured ternary compound (Pd2Si1−yGey) formed concurrently with the PdGe phase, at annealing temperatures between 200 and 550 °C. Above 500 °C, a region of Si1−xGex alloy with high Ge concentration formed between the fully reacted compound and the unreacted Si1−xGex layer.
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68.35.Fx Diffusion; interface formation
66.30.Ny Chemical interdiffusion; diffusion barriers
68.55.-a Thin film structure and morphology
68.60.Wm Other nonelectronic physical properties

Influence of the negative‐U OAs defect in GaAs on the isolation behavior of oxygen‐implanted AlGaAs/GaAs heterostructures

R. D. Schnell, S. Gisdakis, and H. Ch. Alt

Appl. Phys. Lett. 59, 668 (1991); http://dx.doi.org/10.1063/1.105359 (3 pages) | Cited 1 time

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The isolation behavior of oxygen implants in AlGaAs/GaAs modulation‐doped heterostructures has been studied in comparison to boron implants. After annealing between 400 and 550 °C a thermally activated compensation mechanism in addition to damage‐induced deep levels is observed in the case of oxygen. Infrared absorption spectroscopy shows local vibrational modes of off‐center substitutional oxygen in GaAs at wave numbers of 721 and 734 cm−1 in the implanted surface region after annealing. The substitutional oxygen acts as a deep electron trap and causes a chemical‐induced compensation.
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61.72.U- Doping and impurity implantation
71.55.Eq III-V semiconductors
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Acceptor compensation mechanism by midgap defects in nitrogen‐doped ZnSe films

A. Ohki, Y. Kawaguchi, K. Ando, and A. Katsui

Appl. Phys. Lett. 59, 671 (1991); http://dx.doi.org/10.1063/1.105360 (3 pages) | Cited 7 times

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A new carrier compensation mechanism has been investigated in nitrogen‐doped ZnSe films grown by low‐pressure metalorganic vapor phase epitaxy. Photoconduction spectrum measurements have revealed the existence of deep defect levels located just above the center of the band gap in N‐doped, highly compensated films. These results combined with photo‐Hall measurements (under infrared illumination) have revealed that these midgap defect levels act as deep donors, and play an important role in carrier compensation in shallow acceptor doped ZnSe films.
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71.55.Gs II-VI semiconductors
72.40.+w Photoconduction and photovoltaic effects
73.61.Ga II-VI semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Donor‐acceptor pair formation in InP doped simultaneously with Si and Zn during metalorganic chemical vapor deposition

C. Blaauw and L. Hobbs

Appl. Phys. Lett. 59, 674 (1991); http://dx.doi.org/10.1063/1.105361 (3 pages) | Cited 8 times

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Deposition of InP by metalorganic chemical vapor deposition, simultaneously doped with both a donor (Si) and an acceptor (Zn) species during the growth, has been carried out. The incorporation of Si is not affected by the presence of Zn, but the Zn incorporation is substantially enhanced by the presence of Si. These results are consistent with the formation of donor‐acceptor pairs, which has been suggested earlier to explain Zn diffusion profiles in Si‐doped InP.
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61.72.U- Doping and impurity implantation
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
71.55.Eq III-V semiconductors

Differential photoreflectance from δ‐doped structures and GaAs/n‐GaAs interfaces

Michael Sydor, Ali Badakhshan, and James R. Engholm

Appl. Phys. Lett. 59, 677 (1991); http://dx.doi.org/10.1063/1.105362 (3 pages) | Cited 11 times

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Using a differential modulation technique we suppress the perturbation of the surface electric field of the sample and extract photoreflectance from buried interfaces. The resulting signals show combinations of a low‐field GaAs signature and a high‐field oscillatory signal which suggest existence of an ∼30 meV potential offset at the highly doped GaAs/n‐GaAs interfaces. The offset is present at both, δ‐doped interfaces and simple doped interfaces. For low differential modulation intensities, we observe a signal which could be attributed to two‐dimensional electron gas in δ‐doped samples, however, the signal cannot be easily differentiated from low‐field Franz–Keldysh oscillations.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Interface reaction model for process voiding in aluminum conductor lines

W. T. Tseng and J. P. Stark

Appl. Phys. Lett. 59, 680 (1991); http://dx.doi.org/10.1063/1.105363 (2 pages) | Cited 3 times

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A model is proposed to give a new account for process induced voiding in aluminum conductor lines in integrated circuits. The chemical reaction along the glass/aluminum interface is considered and yields a volume change. Simple calculations of changes in molecular volumes, using Wigner–Seitz radii and ionic radii for the silicon oxide reduction by aluminum all indicate vacancy creation in aluminum as the reduction proceeds. Aggregation of the vacancies will produce the voids noted from room‐temperature anneals or storage.
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73.40.Ns Metal-nonmetal contacts
73.61.At Metal and metallic alloys
85.40.Ls Metallization, contacts, interconnects; device isolation

Monolayer δ‐doped heterojunction bipolar transistor characteristics from 10 to 350 K

K. W. Goossen, J. E. Cunningham, T. Y. Kuo, W. Y. Jan, and C. G. Fonstad

Appl. Phys. Lett. 59, 682 (1991); http://dx.doi.org/10.1063/1.105364 (3 pages) | Cited 6 times

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Heterojunction bipolar transistors (HBTs) with bases composed of a single monolayer of dopant are found to have exponentially increasing current gain as the temperature is lowered, in contrast to the gains of homogeneously doped HBTs, which have little dependence on temperature. We present GaAs‐AlGaAs HBTs with base doping as high as 3×1014 cm−2 with a room‐temperature current gain of 14. The sheet resistance of such a layer is 270 Ω/square at room temperature, and the carriers are restricted to a 15 Å layer, implying an extremely short base transit time. AT 77 K the gain increases to 220, while the base resistance decreases to 190 Ω/square. Therefore by operating this HBT at low temperature we have achieved for the first time high gain and low base resistance in a HBT with an infinitesimally thin base.
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85.30.Pq Bipolar transistors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
85.40.Hp Lithography, masks and pattern transfer

370 °C clean for Si molecular beam epitaxy using a HF dip

D. J. Eaglesham, G. S. Higashi, and M. Cerullo

Appl. Phys. Lett. 59, 685 (1991); http://dx.doi.org/10.1063/1.105365 (3 pages) | Cited 54 times

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We describe a new low‐temperature clean for Si molecular beam epitaxy. Growth is carried out on Si wafers subjected to an ≊10–60 s clean in a buffered HF solution prior to insertion in the growth chamber. We demonstrate low defect densities (<105 cm−2) at 380 °C without either the conventional high‐temperature cleaning step to desorb a chemical oxide or the use of a glovebox for chemical cleaning and transfer to the vacuum chamber. Wafers are given an ≊200 °C prebake in situ to remove hydrocarbons, and then raised to the growth temperature prior to deposition. For (100) substrates the transition from amorphous deposition to crystalline growth occurs at ≊370 °C, below the temperature at which hydrogen should desorb. On (111) the minimum temperature for epitaxy is ≊500 °C, as expected. We attribute this difference to the large number of undercoordinated Si atoms present on (100), which allows growth to take place even on the hydrogen‐terminated surface. Secondary‐ion mass spectrometry suggests that contamination levels at the substrate‐epilayer interface using this HF dip are comparable to those for conventional (‘‘Shiraki’’) chemical oxide desorption techniques. Omission of the prebake step leads to a highly carbon‐contaminated surface: this surface has the remarkable property that Si will grow epitaxially on it, but does not wet it (so that at high temperature Si/Si:C grows as islands).
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.65.-b Surface treatments

Arsenic‐doped P‐type ZnTe grown by molecular beam epitaxy

F. S. Turco‐Sandroff, M. J. S. P. Brasil, R. E. Nahory, R. J. Martin, Y. Zhang, and B. J. Skromme

Appl. Phys. Lett. 59, 688 (1991); http://dx.doi.org/10.1063/1.105366 (3 pages) | Cited 12 times

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Efficient p doping of ZnTe by arsenic has been achieved using a Zn3As2 effusion cell. Doping levels of ZnTe/GaAs can be controlled from 1016 to 1018 cm−3. The carrier concentration is independent of the substrate used, ZnTe:As/GaAs and ZnTe:As/InP giving similar results. Spectral photoconductivity and low‐temperature photoluminescence, however, show an increase of deep levels for doping levels higher than 1017 cm−3 but electrical measurements show no saturation for doping as high as 1018 cm−3.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
71.55.Gs II-VI semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Comparison of the effects of surface passivation and base quasi‐electric fields on the current gain of AlGaAs/GaAs heterojunction bipolar transistors grown on GaAs and Si substrates

William Liu, Damian Costa, and James Harris

Appl. Phys. Lett. 59, 691 (1991); http://dx.doi.org/10.1063/1.105367 (3 pages) | Cited 3 times

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The effects of extrinsic base surface passivation and base quasi‐electric field on the current gain of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) grown upon GaAs and Si substrates are compared. The degree of improvement in the current gain realized by either the base field and/or passivation depends strongly on which substrate is used. It is also shown that base‐emitter junction space‐charge recombination current is a significant base current component for all devices, even at high current levels. The current gain for passivated devices with a base field of 1.25×104 V/cm achieves a maximum value of 1100 for a HBT‐on‐GaAs, and 100 for a HBT‐on‐Si.
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85.30.Pq Bipolar transistors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
71.55.Eq III-V semiconductors
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